TW200527055A - Liquid crystal display and panel therefor - Google Patents

Liquid crystal display and panel therefor Download PDF

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Publication number
TW200527055A
TW200527055A TW93137511A TW93137511A TW200527055A TW 200527055 A TW200527055 A TW 200527055A TW 93137511 A TW93137511 A TW 93137511A TW 93137511 A TW93137511 A TW 93137511A TW 200527055 A TW200527055 A TW 200527055A
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Taiwan
Prior art keywords
liquid crystal
crystal display
electrode
substrate
display panel
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TW93137511A
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Chinese (zh)
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TWI310104B (en
Inventor
Nak-Cho Choi
Jae-Jin Lyu
Chang-Hun Lee
Dong-Ki Lee
Hak-Sun Chang
Soo-Jin Kim
Hee-Wook Do
Lujian Gang
Ji-Won Sohn
Mee-Hye Jung
Il-Kook Huh
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Samsung Electronics Co Ltd
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Priority claimed from KR1020040088808A external-priority patent/KR20050121173A/en
Priority claimed from KR1020040096864A external-priority patent/KR101219034B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200527055A publication Critical patent/TW200527055A/en
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Publication of TWI310104B publication Critical patent/TWI310104B/en

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  • Liquid Crystal (AREA)

Abstract

A liquid crystal display is provided, which includes: a substrate; a field-generating electrode formed on the substrate; and a slope member formed on the substrate and having an inclination angle smaller than about 45 degrees.

Description

200527055 九、發明說明: 【發明所屬之技術領域】 本發明係關於液晶顯示器及其面板。 【先前技術】 液晶顯示器(LCD)為最廣泛使用之平板顯示器之一。LCD 包括具有諸如像素電極及一共同電極之場產生電極之兩個 面板及插入其間之液晶(LC)層。LCD藉由向場產生電極施 加電壓而在LC層中產生電場來顯示影像,該電場決定LC層 中之LC分子之定向以調整入射光之偏振。 在LCD之中,由於具有高對比率及廣闊的參考視角,對 準LC分子使得在不存在電場之情況下LC分子之長軸正交 於面板的垂直對準(VA)模式LCD較為突出,其中該視角界 定為使對比率等於1:10之視角或用於灰度之間的亮度轉換 之臨界角。 VA模式LCD之廣闊視角可由場產生電極中之切口及場產 生電極上之突起來實現。因為該等切口及該等突起可決定 LC分子之傾斜方向,所以可藉由利用該等切口及該等突起 將傾斜方向分佈至若干方向使得該參考視角得以拓寬。 然而,具有切口或突起之LCD可能具有較長回應時間。 此係因為逆離切口及突起之液晶分子之傾斜方向由場產生 電極上的液晶分子之推動或液晶分子與場產生電極之碰撞 來決定,且因此液晶分子之對準不穩定且不規則。儘管可 藉由緊密地將該等切口分隔開來改良回應時間,但是此可 導致孔徑比之減小。 98089.doc 200527055 【發明内容】 本發明之目的在於解決習知技術之問題。 本發明提供一種液晶顯示器,其包括:一基板;一形成 於該基板上之場產生電極;及一形成於該基板上並具有一 小於約45度之側傾角之傾斜構件。 該側傾角可小於約20度,較佳地在約丨-⑺度之範圍内, 且更佳地在約1 -5度之範圍内。 該傾斜構件可具有逐漸減小之高度。 该傾斜構件可具有一曲面。 該傾斜構件可包括一向上突起之隆脊。 該場產生電極可具有一突起,而該傾斜構件可具有一大 體上與該突起一致之隆脊。 4傾斜構件可具有一大體上與場產生電極之邊緣一致之 隆脊。 該傾斜構件可包括感光性有機絕緣體。 3亥傾斜構件可安置於場產生電極上。 忒液晶顯不器面板可進一步包括一安置於傾斜構件上之 對準層。 本發明k供一種液晶顯示器,其包括:一基板;一形成 於垓基板上之第一場產生電極;一安置於該第一場產生電 極對面之第二場產生電極;一安置於該第一場產生電極與 該第二場產生電極之間的液晶層;及一形成於該基板上並 具有一減少液晶層之回應時間的傾斜表面之傾斜構件。 該側傾角可在約1-10度之範圍内。 98089.doc 200527055 該傾斜構件可具有逐漸減小之高度。 該液晶顯示器可進一步包括一決定液晶層中之液晶分子 在施加電場之情況下的傾斜方向之第一傾斜方向決定構 件。該第—傾斜方向決定構件可包括一在第一場產生電極 處之第一切口。該傾斜構件可安置於第二場產生電極2。 該傾斜構件可具有一與第—切口交替排列之隆脊,且鲸 傾斜構件之隆脊可大體上與第一場產生電極之邊緣—致了 該液晶顯示器可進-步包括-第二傾斜方向決定構件, 其包括在第二場產生電極處之一第二切口。傾斜構件可具 有一大體上與第二切口一致之隆脊。 /、 該傾斜構件可包括介電常數等於或小於液晶層 緣體。 β «亥液sa層可具有負各向異性且經受垂直對準。 該$一場產生電極可具有重疊第二場產生電極之邊緣, 且該第二場產生電極可不具有切口。 。亥傾斜構件可具有在約〇·5-2 〇微米之範圍内的厚度。 本發明提供一種液晶顯示器面板,其包括··一基板;一 閘極線’一與第一訊號線相交之資料線;一連接至該閘極 線=該資料線之薄膜電晶體;一連接至該薄膜電晶體之像 素電極;及一安置於該像素電極上並具有-低於約45度之 側傾角的傾斜構件。 又 該側傾角可在約Μ0度之範圍内。 該傾斜構件可具有—曲面。 該傾斜構件可包括一大體上安置於像素電極之邊緣上的 98089.doc 200527055 隆脊。 且该像素電極可具 該貧料線及該像素電極可為彎曲的 有一凸邊及一平行於該凸邊之凹邊。 該像素電極可具有一切口, 且巧傾斜構件可包括一 上與像素電極之切口一致之隆脊。 該切口可具有關於將像素 电位一寺分成上半部及下半 之線的反對稱性。 卞丨 該切口可傾斜於該閘極線而延伸。 a亥切口可與該閘極線成約45度角。 忒液晶顯示器面板可進一步包括 a 、, y 文置於與閘極線一樣 之層上並重疊像素電極之儲存電極。 本發明提供一種液晶顯示器面板,其包括:一基板.一 形成於該基板上且具有—第—區域之場產生電極了及安置 於該場產生電極上之複數個傾斜構件,該等複數個傾斜構 件具有傾斜表面,並㈣A於該第—區域之-半的區域。 該傾斜構件可具有一安置於第— 文置孓弟一 &域中之週期性重複最 小單7L圖案’且該第_區域可包括複數個第二區域。 該側傾角可在約1-10度之範圍内。 "亥場產生電極可大體上完全覆蓋基板。 該傾斜構件可包括向上突起之隆脊。 該場產生電極可具有―切口,且該傾斜構件可包括大體 上與該切口 一致之隆脊。 該傾斜構件可具有在約〇 5_2.〇微米之範圍内的厚度。 該傾斜構件可包括感光性有機絕緣體。 98089.doc •10- 200527055 本發明提供一種液晶顯示器,其包括:—第—基板;形 成於該第-基板上之複數個第一場產生電極;一面向該第 一基板之第二基板;-安置於該第二基板上之第二場產生 電極,-安置於該第-場產生電極與該第二場產生電極之 間的液晶層’ ·及形成於第_及第二場產生電極之_者上的 複數個傾斜構件,每—傾斜構件具有自隆脊逐漸減小之高 度。 該傾斜構件可具有-在約度之範_變化㈣面。 該等第一場產生電極之每一者可具有一第一區域,且該 等傾斜構件之每一者可佔用大於該第一區域之一半的區 域。 該傾斜構件可減少液晶層之回應時間。 該液晶顯示器可進-步包括決定液晶層t之液晶分子在 施加電場之情況下的傾斜方向且安 個第—傾斜方向決定構件,其中該等傾斜構件安置 基板上並與該等第一傾斜方向決定構件交替排列。 、該第-傾斜方向決定構件可包括在第—場產生電極處之 複數個第一切口。 該液晶顯示器可進-步包括決定液晶層中之液晶分子在 施加電場之情況下的傾斜方向且安置於第二基板上之複數 個第二傾斜方向決定構件。 該等傾斜構件之隆脊可大體上與該等第二傾斜方向決定 構件一致。 該等第二傾斜方向決定構件可包括在第三場產生電極處 98089.doc 200527055 之複數個第二切口。 該液晶顯示器可進一步包括決定液晶層中之液晶分子在 施加電場之情況下的傾斜方向且安置於第二基板上之複數 個第一傾斜方向決定構件,其中該等傾斜構件安置於第一 基板上且與該等第—傾斜方向決定構件交替排列。 該等第-傾斜方向較構件可包括在第二場產生電極處 之複數個第一切口。 該液晶顯示器可進-步包括決定液晶層中之液晶分子在 施加電場之情況下的傾斜方向並安置於第一基板上之複數 個第二傾斜方向決定構件。 該等傾斜構件之„大體上與料第:傾斜方向決定構 件一致。 該等第二傾斜方向決定構件可包括在第—場產生電極處 之複數個第二切口。 【實施方式】 現將在下文中參看展示本發明之較佳實施例的隨附圖式 來更全面地述本發明。然而,本發明可體現為諸多不同 形式且不應解釋為其限於本文所陳述之實施例。 在啫圖式中,為了清晰起見而誇大了層、薄膜及區之厚 度。王文中相同之數字表示相同之元件。應瞭解當諸如層、 薄膜、區或基板之元件被稱為,,在另一元件之上,,時,其可 直接在另一元件上或亦可存在介入元件。相反地,當一元 件被稱為”直接在另一元件上”時,便不存在介入元件。 現將參看隨附圖式描述根據本發明之實施例的液晶顯示 98089.doc -12- 200527055 器及用於LCD之薄膜電晶體(TFT)陣列面板。 現將參看圖1-4詳細描述根據本發明之一實施例的LCD。 圖1為根據本發明之一實施例之LCD的TFT陣列面板之布 局圖;圖2為根據本發明之一實施例之LCD的共同電極面板 之布局圖;圖3為包括圖1中所展示之TFT陣列面板及圖2中 所展示之共同電極面板之LCD的布局圖;且圖4為圖3中所 展示之LCD沿線IV-IV,所截得之截面圖。 根據本發明之一實施例的LCD包括一 TFT陣列面板1〇〇、 一共同電極面板200、及一插入面板1〇〇與200之間的LC層3。 現參看圖1、3及4來詳細描述TFT陣列面板100。 複數個閘極線121及複數個儲存電極線13 1形成於諸如透 明玻璃之絕緣基板110上。 閘極線121大體上以橫向方向延伸並彼此分離且傳輸閘 極訊號。每一閘極線121包括形成複數個閘極電極124之複 數個凸出,及一具有用於與另一層或一外部驅動電路接觸 之較大區域的末端部分丨29。閘極線121可延伸以連接一可 整合在TFT陣列面板1〇〇上之驅動電路。 每一儲存電極線13 1大體上以橫向方向延伸且被安置於 相鄰兩個閘極線丨21之間,並接近於兩個閘極線12ι中較上 之一者。每一儲存電極線131包括複數個分枝l33a-133d之 集合及連接該等分枝133a_133d之複數個連接133e。 分枝133a-133d之集合包括形成第一及第二儲存電極 133a及133b且使其彼此遠離而分隔開之兩個縱向分枝,及 形成第三及第四儲存電極133(:及133d且連接於第一及第二 98089.doc -13- 200527055 儲存電極133 a及133b之間的兩個傾斜分枝。詳言之,第一 儲存電極133a具有一自由末端部分及一連接至儲存電極線 131之固定末端部分且具有一凸出。第三及第四儲存電極 133c及133d分別自第一儲存133a之中心附近及第二儲存電 極133b之上部及下部末端延伸。 在儲存電極133a-133d之一集合的第一儲存電極133&與 其相鄰之儲存電極133a_133d之另一集合的第二儲存電極 133b之間連接每一連接I33e。 向儲存電極線131供應諸如通用電壓之預定電壓,其被施 加至LCD之共同電極面板2〇〇上的共同電極27〇。每一儲存 電極線13 1可包括以橫向方向延伸之一對桿。 閘極線121及儲存電極線13 1較佳地由諸如鋁及鋁合金之 含鋁金屬、諸如銀及銀合金之含銀金屬、諸如銅及銅合金 之含銅金屬、諸如鉬及鉬合金之含鉬金屬、鉻、鈦或鈕製 成。閘極線121及儲存電極線131可具有包括具有不同實體 特徵之兩種薄膜的多層結構。該等兩種薄膜之一種較佳地 由包括含鋁金屬、含銀金屬、及含銅金屬之低電阻金屬製 成以減小閘極線121及儲存電極線13 1中之訊號延遲或電 壓降落。另一薄膜較佳地由諸如含鉬金屬、鉻、鈕或鈦之 材料製成,該材料具有良好物理、化學、及與諸如銦錫氧 化物(ITO)或銦鋅氧化物(IZ0)之其它材料的電接觸之特 徵。該等兩種薄膜之組合之較好實例為一下部鉻薄膜與一 上部链歛合金薄膜及一下部鋁薄膜與一上部鉬薄膜。 另外,閘極線121及儲存電極線131之側面相對於基板之 98089.doc -14- 200527055 表面傾斜,且其側傾角在約20-80度之範圍内變化。 較佳地由氮化矽(SiNx)製成之閘極絕緣層140形成於閘 極線12 1及儲存電極線1 3 1上。 較佳地由氫化非晶矽(簡化為”a-Si”)或多晶矽製成之複 數個半導體條紋151形成於閘極絕緣層140上。每一半導體 條紋151大體上以縱向方向延伸且具有朝向閘極電極124分 岔之複數個凸出1 54。半導體條紋15 1在閘極線12 1及儲存電 極線131附近變寬,使得半導體ι51覆蓋閘極線121及儲存電 極線13 1之較大區域。 較佳地由矽化物或大量摻雜了諸如填之η型雜質之n+氫 化a-Si之歐姆接觸條紋161及歐姆接觸島狀物165形成於半 導體條紋1 5 1上。每一歐姆接觸條紋16丨具有複數個凸出 163,且該等凸出163與該等歐姆接觸島狀物165成對地定位 於半導體條紋151之凸出154上。 半導體條紋151及歐姆接觸161及ι65之側面相對於基板 之表面傾斜’且其側傾角較佳地在約3〇-8〇度之間之範圍 内。 複數個資料線171、與資料線171分開之複數個汲電極 175及複數個經隔離之金屬件178形成於歐姆接觸16 1及 165及閘極絕緣層14〇上。 用於傳輸資料電壓之資料線丨7丨大體上以縱向方向且以 直角越過閘極線121而延伸。資料線171亦與儲存電極線131 及連接133e相交使得將每一資料線171安置於儲存電極線 131之分枝l33a-l33d之相鄰集合中之第一與第二儲存電極 98089.doc -15- 200527055 133a與133b之間。每一資料線171包括一具有用於與另一層 或外邛褎置接觸之較大區域的末端部分179。每一資料線 171包括朝向汲電極175凸出之複數個源電極。 每一汲電極175包括一末端部分,其具有一較大區域以用 於/、另層及安置於閘極電極124上且部分地由源電極173 包圍之另一末端部分接觸。一閘電極124、一源電極173、 及汲電極175連同一半導體151之一凸出154 一起形成了 八有通道之TFT,該通道形成於安置於源電極173與汲 電極175之間的凸出154中。 字至屬件178女置於儲存電極133a之末端部分附近之閘 極線121上。 資料線171、汲電極175、及金屬件178較佳地由諸如絡、 鉑、欽、組或其合金之難溶金屬製成。然而,其亦可具有 匕括低電阻薄膜(未圖示)及良好接觸薄膜(未圖示)之多層 結構。該組合之較好實例為下部鉬薄膜、"1鋁薄膜、及 j部钥薄膜’ A以上所描述之下部鉻薄膜與上部㈣合金 薄膜及下部鋁薄膜與上部鉬薄膜之組合。 如同閘極線121及儲存電極線131—般,資料線171及沒電 極175具有傾斜側面,且其側傾角在約度之範圍内變 化。 歐姆接觸161及165僅:^ λ甘π 僅插入其下方之半導體條紋1 5 1與其 上之上方資料、線171及上枝電極175之間,錢少其間之 接觸電阻。半導體條^M s〗七 條、、文15 1包括啫如定位於源電極1 73與汲 電極17 5之間的部分夕廿土费# P之亚未覆盖貢料線171及汲電極175的 98089.doc -16- 200527055 複數個曝露部分。儘管半導體條紋151在大多數地方比資料 線171窄,但如上所述,半導體條紋151之寬度在閘極線12 i 及儲存電極線13 1附近變大,以使表面之輪廓變平滑,藉此 阻止資料線171之斷開。 鈍化層180形成於資料線171、汲電極175、金屬件178、 及半體條紋1 5 1之曝露部分上。鈍化層1 8 〇較佳地由諸如 氮化矽或二氧化矽之無機絕緣體、具有良好平坦性特徵之 感光性有機材料、或藉由電漿增強化學氣體沉積(PEVCD) 形成之諸如a-Si:C:0及a-Si:0:F的具有低於4·0之介電常數 的低介電絕緣材料製成。鈍化層i 8〇可具有包括下部無機薄 膜及上部有機薄膜之雙層結構。 鈍化層180具有分別曝露資料線171之末端部分179及汲 電極175之末端部分的複數個接觸孔182及185。鈍化層18〇 及閘極絶緣層140具有曝露閘極線1 7 1之末端部分1 29的複 數個接觸孔18卜曝露第一儲存電極133a之固定末端部分附 近之儲存電極線13 1之部分的複數個接觸孔丨83a,及曝露第 一儲存電極133a之自由末端部分之凸出的複數個接觸孔 183b 〇 較佳地由諸如ITO或IZ0之透明導體或諸如銀或鋁之反 射導體製成之複數個像素電極190、複數個接觸助件81及82 及複數個跨線橋(〇VerpaSS)83形成於鈍化層18〇上。 將像素電極190經由接觸孔185實體地連接且電連接至汲 %極175,使彳亍像素電極19〇接收來自汲電極175之資料電 壓。 98089.doc 200527055 仏應以貝料電壓之像素電極190協同共同電極270產生決 定液晶層3中之液晶分子31〇之定向的電場。 像素电極190及共同電極270形成一在TFT關斷之後儲存 所知加之電壓的液晶電容器。提供平行於液晶電容器而連 接之稱為,,儲存電容器”之額外電容器來增強電壓儲存能 力藉由重豐像素電極190與包括儲存電極133 a-133 d之儲 存電極線13 1來建構儲存電容器。 字母像素電極190在其左角處斜切,且像素電極19〇之 该等經斜切之邊緣與閘極線121成約45度角。 每一像素電極190具有將像素電極丨9〇分割成複數個子部 分之一下部切口 92a、一中間切口 91及一上部切口 92b。切 口 91-92b大體上具有關於將像素電極19〇二等分之假想橫 向線之反對稱性。 下部及上部切口 92a及92b自像素電極190之右上角附近 的右邊緣近似地傾斜地延伸至像素電極19〇之左邊緣之中 ^ 且重弟二及弟四錯存電極133c及133d。將下部及上 部切口 92a及92b分別安置於可藉由該假想橫向線分開之像 素電極190之下半部及上半部處。下部及上部切口 92a及92b 與閘極線121成約45度角,且其大體上彼此正交而延伸。 中心切口 91沿該假想橫向線延伸且具有一來自像素電極 190之右邊緣之入口,其具有分別大體上平行於下部切口 92a及上部切口 92b之一對傾斜邊緣。 因此,藉由下部切口 92a將像素電極19〇之下半部分割成 兩個下部子部分,且藉由上部切口 92b亦將像素電極i 9〇之 98089.doc -18- 200527055 上半部分割成兩個上部子部分。子部分之數目或切口之數 目取決於以下設計因素而變化··諸如像素之尺寸、像素電 極之秩向邊緣與縱向邊緣之比率、液晶層3類型及特徵等。 接觸助件81及82分別經由接觸孔181及182連接至閘極線 121之末端部分129及資料線171之末端部分179。接觸助件 81及82保護末端部分129及179且補充末端部分129及179與 外部裝置之黏著力。 。亥專跨橋線83越過閘極線121且分別經由接觸孔1 83b及 183a連接至第一儲存電極133a之固定末端部分之曝露凸出 及儲存電極線131之曝露部分,該曝露凸出與該曝露部分關 於閘極線121彼此相對地安置。跨橋線8 3重疊金屬件17 $且 可電連接至金屬件178。包括儲存電極133卜133€1之儲存電 極線131連同跨橋線83及金屬件ι78係用於修復閘極線 121、資料線17卜或TFT中之故障。藉由一雷射光束照明閘 極線121與跨橋線8 3之相交點來將閘極線121電連接至跨橋 線83,從而獲得用於修復閘極線121之閘極線121與儲存電 極線131之間的電連接。在此種狀況下,金屬件178增強了 閘極線121與跨橋線83之間的電連接。 較佳地由絕緣體製成之複數個傾斜構件33 UMb之集合 形成於像素電極190及鈍化層180上。傾斜構件331_333b之 介電常數較佳地等於或小於LC層3之介電常數。傾斜構件 33 1-333b之每一集合包括安置於像素電極ι9〇上之四個傾 斜構件33 1-333b。傾斜構件33 1-333b之每一者具有主要邊緣 及次要邊緣,使得其具有梯形、三角形、或人字形之平面 98089.doc -19- 200527055 形狀;該等主要邊緣平行於切口 91-92b之邊緣及像素電極 190之經斜切之左邊緣且其安置於切口 91-92b之間或像素 電極190之切口 91 a及92b與其經斜切之左邊緣之間;該等次 要邊緣平行於閘極線121或資料線171。傾斜構件33 1-333b 之每一者具有一近似地安置於切口 92a&92b之中心線上、 切口 91之邊緣上或像素電極19〇之經斜切邊緣上且沿其延 伸之隆脊,及高度自隆脊至主要邊緣減小之傾斜表面。隆 脊之高度較佳地在約0.5-2.0微米之範圍内,且該傾斜表面 相對於基板11 〇之表面的側傾角Θ較佳地小於約4 5度且更佳 地在約1-10度之範圍内。傾斜表面可為直的或彎曲的,且 曲面之側傾角可界定為平均側傾角或具有連接傾斜構件 33 l-333b之頂部與側邊點之側邊的直角三角形之高度與底 部邊緣之長度的比率之反正切。較佳地,傾斜構件331_333匕 之集合佔用等於或大於像素電極19〇之一半的區域。相鄰像 素電極1 9 0之傾斜構件3 3 1 - 3 3 3 b可彼此連接。 以下將參看圖2-4來描述共同電極面板2〇〇。 用於阻止光線漏損之稱為黑色矩陣(Mack matdx)的光阻 塞構件(light blocking member)220形成於諸如透明玻璃之 絕緣基板21〇上。光阻塞構件22〇可包括面向像素電極19〇 之複數個開口 225 ’且可具有大體上如像素電極19〇之平面 形狀。另外,光阻塞構件220可包括對應於資料線i7i之線 性部分及對應於TFT之其它部分。 置 複數個彩色濾光片230形成於基板21〇上,且其大體上安 於由光阻塞構件220包圍之區域中 采/色渡光片230可大 98089.doc -20- 200527055 體上沿縱向方向而沿著像素電極1 90延伸。彩色濾光片230 可表示諸如紅色、綠色及藍色色彩之原色之一者。 用於阻止彩色濾光片230被曝露並用於提供一平坦表面 之外塗層(〇vercoat)250形成於彩色濾光片230及光阻塞構 件220上。 較佳地由諸如ITO及IZO之透明導電材料製成之共同電 極270形成於外塗層250上。 共同電極270具有複數個切口7 1 - 72b之集合。 切口 71-72b之集合面向像素電極19〇,且包括一下部切口 72a、一中心切口 71及一上部切口 72b。切口 71_72b之每一 者女置於像素電極190之相鄰切口 91-92b之間或像素電極 190之切口 92a或92b與像素電極190之經斜切之邊緣之間。 另外,切口71-72b之每一者具有平行於像素電極19〇之下部 切口 92a或上部切口 92b而延伸之至少一傾斜部分,且彼此 平行之切口 71-72b及91-92b之相鄰兩者之間的距離、其傾斜 部分、其傾斜邊緣、及像素電極19〇之經斜切邊緣大體上相 同。切口 71-72b大體上具有關於以上所描述之二等分像素 電極190之橫向線的反對稱性。 下部及上部切口 72a及72b之每—者包括:一近似地自像 素電極190之左邊緣延伸至像素電極19〇之下部或上部邊緣 之傾斜部分ϋ自該傾斜部分之各別末端沿像素電極19〇 之邊緣而延伸、重疊像素電極19〇之邊緣並與該傾斜部分成 純角之橫向及縱向部分。 中心切口 包括:一近似地自像素電極19〇之左邊緣沿第 98089.doc 200527055 三儲存電極133c延伸之令央橫向部分;自該中央橫向部分 之末端近似地延伸至像素電極之右邊緣且與該中央橫向部 分成鈍角之一對傾斜部分;及自各別傾斜部分之末端沿像 素電極190之右邊緣延伸、重疊像素電極19〇之右邊緣並與 各別傾斜部分成鈍角之一對終端縱向部分…啦丨㈣ longitudinal portion) ° 切口 71-72b之數目可視設計因素而定而變化,且光阻塞 構件220亦可重疊71-72b以阻塞通過切口 71-721)之光線漏 損。 較佳地由絕緣體製成之複數個柱狀分隔片32〇形成於 TFT陣列面板1〇〇與共同電極面板2〇〇之間。分隔片32〇接觸 TFT陣列面板1〇〇之鈍化層18〇及共同電極面板2〇〇之共同電 極270,使得其支撐面板1〇〇與200之間的間隙。分隔片32〇 可由如傾斜構件33 1-333b之層製成或可倂入鈍化層ι8〇中。 將可為垂直型(homeotropic)之對準層11及21塗覆於面板 100及200之内部表面,且於面板100及200之外部表面提供 偏光^§ 12及2 2使付其偏振轴可相交且透射轴之一者可平行 於閘極線121。當LCD為一反射性LCD時可省略偏光器中之 一者。 LCD可進一步包括用於補償LC層3之延遲的至少一延遲 薄膜(未圖示)。延遲薄膜具有雙折射且給出與LC層3所給定 之延遲相反的延遲。延遲薄膜層可包括單軸或二軸光學補 償薄膜,詳言之,其可包括負單軸補償薄膜。 LCD可進一步包括經由偏光器12及22、延遲薄膜及面板 98089.doc -22- 200527055 100及200向LC層3供應光線之背光單元(未圖示)。 較佳地,LC層3具有負介電各向異性且經受垂直對準, 即將LC層3中之LC分子310對準,使得其長軸在不存在電場 之情況下大體上垂直於面板1〇〇及2〇〇之表面。 如圖3中所展示,切口 91_92b及71-72b之集合將像素電極 190劃分成複數個子區域且每一子區域具有兩個主要邊緣。 切口 91-92b及71-72b及傾斜構件33 1-332b控制LC層3中 之LC分子之傾斜方向。將對此進行詳細描述。 一旦向共同電極270施加通用電壓並向像素電極19〇施加 資料電壓,即產生大體上正交於面板1〇〇及2〇〇之表面的電 %。LC分子3 10趨於改變其定向來回應該電場,使得其長軸 正交於該電場方向。 電極190及270之切口 91-92b及71_72b及像素電極19〇之 邊緣扭曲該電場以具有一大體上正交於切口 91_9几及 71-72b之邊緣及像素電極190之邊緣的水平組件。因此,每 一子區域上之LC分子藉由該水平組件以一方向傾斜,且將 傾斜方向之方位角分配局部化成四個方向,藉此增大了 LCD之視角。 同呀,在不存在電場之情況下藉由傾斜構件3 3卜M 將 LC分子310預傾斜,且LC分子31〇之預傾斜方向決定了施加 了電場後1^分子310之傾斜方向,其與切口91_92]3及71_721? 所決定之傾斜方向一致。 另外,具有變化之厚度的傾斜構件33 le332b扭曲電場之 等電位線,且該等電位線之扭曲產生了傾斜力,其亦與當 98089.doc -23- 200527055 傾斜構件33 1-332b之介電常數低於LC層3之介電常數時由 切口 91-92b及7 l-72b決定之傾斜方向一致。 因此,亦決定了遠離切口 91-92b及71-72b及像素電極19〇 之經斜切邊緣之LC分子310的傾斜方向,以減少Lc分子3 1〇 之回應時間。 切口 91-92b及71-72b中之至少其中之一可以突起(未圖示) 或凹陷(未圖示)來替代。該等突起較佳地由有機或無機材料 製成,且安置於場產生電極190或270之上或之下。 可修改切口 91_92b及71-72b之形狀及排列。 g 因為所有晶疇之傾斜方向與平行於或正交於面板1〇〇及 200之邊緣的閘極線121成約45度角,且傾斜方向與偏光器 12及22之透射軸的45度相交產生了最大透射率,所以可附 著偏光器12及22使得偏光器12及22之透射軸平行於或正交 於面板100及200之邊緣,且可減少生產成本。 為具有1.9。、1.8。、及1.1。之側傾角的傾斜構件來量測液 晶之回應時間Ttot,其在圖5中所展示之表格中得以說明。 液晶之回應時間Ttot包括一上料間此仰及一了 φ 降時間(falling time)Tf。該上升時間Tr為在不存在電場之情 況下LC分子回應藉由向像素電極施加最大電壓Vw所產生 =電場的時間’而該下降時間Tf_在向像素電極施加了 最小電壓Vb之後經受了最大電埸τ Γ八 狀八私%之L·。分子返回其初始狀 態的時間。 · 單元間隙(Cell gap)”指示lc 在圖5中所展示之表格中 層3之厚度,意即,面板1〇〇與2〇〇之間的距離 98089.doc -24- 200527055 如圖5中所展示,所量測到之回應時間等於i3.95 ms、 Η·88 ms、及15 34 ms,該等時間少於16 ms,而不存在傾 斜構件之習知之LCD的回應時間為21_25ms。另外,上升時 間T r及回應時間τ t 〇 t隨傾斜構件之側傾角之增大而減小。因 為對動態影像而言一秒内需要顯示6〇訊框之影像,所以所 里測之回應時間低於16 ms使得能夠實現動態影像。 將參看圖6及7詳細描述根據本發明之另一實施例的 LCD 〇 圖6為根據本發明之另一實施例iLCD的布局圖,而圖7 為圖6中所展示之LCD沿線Vll-Vir所截得之截面圖。 參看圖6及7 ’根據此實施例之LCD亦包括一 TFT陣列面板 100、 共同電極面板200、一插入面板1〇〇與200之間之 層3及複數個柱狀分隔片320 ,及附著在面板1〇〇及2〇〇之外 部表面上之一對偏光器12及22。 根據此實施例之面板1〇〇及2〇〇之分層結構幾乎與圖ι-4 中所展示之彼等結構一樣。 關於該TFT陣列面板1〇〇,包括閘電極124及末端部分129 之複數個閘極線121及複數個儲存電極線ι31形成於基板 110上,且一閘極絕緣層140、包括凸出154之複數個半導體 條紋1 5 1及包括凸出1 63之複數個歐姆接觸條紋丨6丨及複數 個區人姆接觸島狀物16 5順序地形成於其上。包括源電極17 3 及末部分179之複數個資料線1 71、複數個汲電極1及複 數個經隔離之金屬件178形成於歐姆接觸161及丨65上,且鈍 化層180形成於其上。在鈍化層18〇及閘極絕緣層14〇處提供 98089.doc -25- 200527055 複數個接觸孔181、182、183a、183b及185。具有複數個切 口91-921?之複數個像素電極19〇、複數個接觸助件81及82及 複數個跨線橋83形成於鈍化層180上,且對準層11塗覆於其 上。 關於共同電極面板200,一光阻塞構件220、複數個彩色 濾光片230、一外塗層250、一具有複數個切口 71_72b之共 同電極270及一對準層21形成於一絕緣基板21〇上。 不同於圖1-4中所展示之LCD,共同電極面板2〇〇包括安 置於共同電極270及外塗層250上之複數個傾斜構件335、 336a及336b之集合,而TFT陣列面板1〇〇不具有傾斜構件。 如傾斜構件33 1-33 3b—般,傾斜構件335、336a及336b較佳 地由絕緣體製成。傾斜構件335_336b之每一集合包括面向 像素電極190之三個傾斜構件335-336b。傾斜構件335-33讣 之每一者具有主要邊緣及次要邊緣,使得其具有梯形或人 子形之平面形狀;該等主要邊緣平行於切口 7l_72b之傾斜 邊緣且關於切口 71-72b彼此相對地安置;該等次要邊緣平 行於閘極線121或資料線171。傾斜構件335_33613之每一者 具有一隆脊及高度自該隆脊至該等主要邊緣減小之傾斜表 面,該隆脊近似地安置於切口 71_72b之傾斜部分的中心線 上並沿其延伸。相對於基板21〇之表面之傾斜表面的側傾角 0在約M0度之範圍内。 另外,根據此實施例之TFT陣列面板1〇〇之半導體條紋 Mi具有幾乎與資料線171及汲電極175以及下方歐姆接觸 161及165 —樣之平面形狀。然而,半導體條紋151之凸出154 98089.doc -26- 200527055 包括並未被資料線171及汲電極1 7 5覆蓋之一些曝露部分, 諸如定位於源電極173與汲電極175之間的部分。 此外,TFT陣列面板100進一步包括安置於金屬件178之 上的複數個半導體島狀物(未圖示)及安置於其上的複數個 歐姆接觸島狀物(未圖示)。 根據一實施例之TFT陣列面板之製造方法使用一種光微 影製程同時形成資料線171、汲電極17 5、金屬件17 8、半導 體151尽歐姆接觸161及165。 用於光微影製程之光阻圖案具有視位置而定之厚度,且 詳言之,其具有具備減小之厚度的第一及第二部分。該等 第一部分定位於將由資料線17丨、汲電極丨75、及金屬件i 72 佔用之電線區域上且該等第二部分定位於TFT之通道區域 上。 光阻材料之視位置而定的厚度由若干項技術獲得,例 如,提供曝光光罩(exposure mask)上之半透明區域以及透 明區域及光阻塞不透明區域。半透明區域可具有狹縫圖案 (slit pattern)、晶格圖案、具有中間透射率或中間厚度之薄 膜。當使用一狹縫圖案時,狹縫之寬度或狹縫之間的距離 較佳小於用於光微影之曝光器之解析度。另—實例為使用 可車人熔光阻材料。詳言之,一旦使用一僅具有透明區域及 不透明區域的標準曝光光罩形成由可軟溶材料製成之光阻 圖案’其即經受軟㈣程以流動至不具有光阻之區域上, 從而形成薄的部分。 結果’藉由省略光微影步驟簡化製造製程。 98089.doc -27- 200527055 圖1-4中所展示之LCD之上述特徵中的許多可適於圖6及 7中所展示之TFT陣列面板。 將參看圖8 -10詳細描述根據本發明之另一實施例的 LCD 〇 圖8為根據本發明之另一實施例之lcd的共同電極面板 之布局圖,圖9為包括圖1中所展示之tft陣列面板及圖8中 所展示之共同電極面板之LCD的布局圖,而圖丨〇為圖9中所 展示之LCD沿線X-X*所截得之截面圖。 參看圖8-10 ’根據此實施例之LCD亦包括一 TFT陣列面板 100、一共同電極面板200、一插入面板ι00及2〇〇之間的LC 層3及複數個柱狀分隔片320,及附著在面板1 〇〇及2〇〇之外 部表面上之一對偏光器12及22。 根據此實施例之面板100及200之分層結構幾乎與圖1-4 中所展示之彼等結構一樣。 關於TFT陣列面板1〇〇,包括閘電極124及末端部分129的 複數個閘極線121及複數個儲存電極線1 3 1形成於基板11 〇 上,且一閘極絕緣層140、包括凸出154之複數個半導體條 紋151、及包括凸出163之複數個歐姆接觸條紋161及複數個 歐姆接觸島狀物1 65順序地形成於其上。包括源電極173及 末端部分179的複數個資料線17卜複數個汲電極175及複數 個經隔離之金屬件178形成於歐姆接觸161及165上,且鈍化 層180形成於其上。在鈍化層180及閘極絕緣層140處提供複 數個接觸孔181、182、183a、183b及185。具有複數個切口 91 -92b之複數個像素電極190、複數個接觸助件8 1及82及複 98089.doc -28- 200527055 數個跨線橋83形成於鈍化層180上,且對準層1 1塗覆於其 上。 * 關於共同電極面板2〇〇,一具有複數個開口 225之光阻塞 · 構件220、複數個彩色濾光片23〇、一外塗層25〇、一共同電 極270、及一對準層21形成於一絕緣基板21〇上。 不同於圖1-4中所展示之LCD,共同電極面板2〇〇包括安 置於共同電極270及外塗層250上的複數個傾斜構件335、 336a及336b之集合,而TFT陣列面板1〇〇不具有傾斜構件。 如傾斜構件33 1-333b—般,傾斜構件335、33以及3361)較佳 · 地由絕緣體製成。傾斜構件335_336b之每一集合包括面向 像素毛極190之二個傾斜構件335-336b。傾斜構件的 之每一者具有主要邊緣及次要邊緣Μ吏得其具有梯形或人 子形之平面形狀,该等主要邊緣平行於切口 之邊緣 及像素電極190之經斜切左邊緣,並面向切口 或像素 電極190之經斜切左邊緣;該等次要邊緣平行於閘極線pi 或資料線171。傾斜構件335_33讣之每一者具有一隆脊,及 问度自4隆脊至§亥等主要邊緣減小之傾斜表面,該隆脊A · 體上與其主要邊緣等距且平行於該等主要邊緣而延伸。隆 脊之高度在約0·5-2·〇微米之範圍内’且相對於基板21〇之表 面之傾斜表面之側傾角β在約i ] G度之範圍内。較佳地,傾 斜構件335-336b之集合佔用等於或大於像素電極19〇之一 半的區域。 , 另外仏&外塗層之省略為隨意的,但是共同電極27〇 ¥ 不具有切口且因此不具有外塗層。 98089.doc -29- 200527055 在/、同私極面板處不存在切口,但是傾斜構件 b可足以與像素電極190之切口 91_92b—起來決定傾 斜方向。 ' 之省略移除了用於在共同電極27〇處形成切口的光 f#/驟°另外’切σ之省略阻止在特定地方之電荷載 子的來積5亥聚積可移動至偏光器。及^而損壞偏光器 及2藉此使知能夠省略用於阻止偏光器12及22之損壞 、 处里因此,切口之省略連同外塗層之省略顯著地 減少了製造LCD之成本。 圖1 4中所展示之LCD之上述特徵中的許多可適於圖 中所展示之TFT陣列面板。 為提供於一共同電極面板2〇〇上且當最大及最小電壓分 別為7V及IV%具有約2度之側傾角的傾斜構件量測回應時 間。 、上升亇間及下降日守間為約6· 5 ms及約& 3 ms且回應時間 為12 · 8 ms。此展示了上升時間顯著地減少了且幾乎等於下 降時間。因此,移除了上升時間與下降時間之不對稱性。 將參看圖11及12詳細描述根據本發明之另一實施例的 LCD。 圖Π為根據本發明之另一實施例之lcd的布局圖,圖12 為圖11中所展示之LCD沿線χπ-χιι,所截得之截面圖。 蒼看圖11及12,根據此貫施例之l C D亦包括一 T F T陣列面 板100、一共同電極面板2〇〇、一插入面板1〇〇及2〇〇之間的 LC層3及複數個柱狀分隔片320,及附著在面板1⑼及2〇〇之 98089.doc -30- 200527055 外部表面上之一對偏光器12及22。 根據此實施例之面板100及200之分層結構幾乎與圖1 -4 中所展示之彼等結構一樣。 關於TFT陣列面板1〇〇,包括閘電極124及末端部分129的 複數個閘極線121及複數個儲存電極線ι31形成於基板11〇 上,且一閘極絕緣層140、包括凸出154之複數個半導體條 紋151、及包括凸出163之複數個歐姆接觸條紋161及複數個 歐姆接觸島狀物165順序地形成於其上。包括源電極173及 末端部分179之複數個資料線171、複數個汲電極175及複數 個經隔離之金屬件178形成於歐姆接觸161及165上,且鈍化 層180形成於其上。在鈍化層ι80及閘極絕緣層14〇處提供複 數個接觸孔181、182、183a、183b及185,且具有複數個切 口91-921^之複數個像素電極19〇、複數個接觸助件81及82及 複數個跨線橋83形成於鈍化層1 80上。複數個傾斜構件 33 1-333b形成於像素電極190上,且對準層11塗覆於其上。 關於共同電極面板200,一光阻塞構件220、複數個彩色 濾光片230、一外塗層25〇、一包括複數個切口 71_72b之共 同電極270及一對準層21形成於一絕緣基板21〇上。 不同於圖1-4中所展示之LCD, TFT陣列面板1〇〇包括安置 於鈍化層180之下的複數個彩色濾光片條紋23〇,而共同電 極面板200不具有彩色濾光片。彩色濾光片條紋23〇沿縱向 方向延伸且相鄰兩個彩色濾光片條紋23〇之邊緣在資料線 171上彼此完全匹配,但是彩色濾光片23〇可彼此重疊以阻 基像素電極190之間的光線漏損,或可彼此遠離而分隔開。 98089.doc -31 - 200527055 當彩色濾光片230彼此重疊時,可省略安置於共同電極面板 200上的光阻塞構件220。 圖1-4中所展示之LCD的上述特徵中的許多可適於圖η 及12中所展示之TFT陣列面板。 現將參看圖13及14詳細描述根據本發明之一實施例的包 括傾斜構件之共同電極面板之製造方法。 圖13為一共同電極面板及一用於根據本發明之一實施例 的在其製造方法之中間步驟中形成傾斜構件之光罩的截面 圖,而圖14說明與傾斜構件對準之光罩的狹縫。 參看圖13,光阻塞構件220、複數個彩色濾光片23〇及一 外塗層250依次形成於絕緣基板2 1〇上。光阻塞構件22〇較佳 地由包含黑色顏料或鉻或鉻氧化物之有機材料製成,且外 塗層250較佳地由無機或有機絕緣體製成。舉例而言,可藉 由順序地塗覆、曝光、並顯影包含紅色、綠色、及藍色顏 料之負感光性有機材料來形成彩色濾光片23〇。接著,可將 ITO或IZO安置於外塗層250上且將其圖案化以形成具有複 數個切口 70之共同電極270。如以上參看圖8-10所描述的, 可省略該等切口 70。 接著,將感光性有機絕緣層塗覆於共同電極27〇上;經由 光罩400使其經文曝光;並將其顯影以形成複數個傾斜構件 330光罩包括大體上元全地透射入射光之光透射區域◦及 部分地透射入射光之半透明區域A及b。參看圖14,半透明 區域A及B包括彼此遠離而分隔開以界定其間的複數個狹 縫420之複數個光阻塞構件41〇。狹縫42〇之寬度及狹縫 98089.doc -32- 200527055 之間的距離較佳地低於在曝光中使用之曝露器之解析度。 半透明區域A及B之光透射率自半透明區域八及8之中心至 邊緣逐漸增加。舉例而言’在半透明區域种,光阻塞構件 41〇之覓度固疋在約1〇-2.5微米之範圍内而狹縫420之寬度 自半透明區域A之十心至兩個邊緣逐漸增加。相反,狹縫42〇 之寬度固定在約1.0-2.5微米之範圍内而光阻塞構件41〇之 寬度自半透明區域B之中心至兩個邊緣逐漸減少。 以上所描述之方法能夠獲得傾斜構件33〇之統一側傾角 Θ,且實現統一、可再生之製造製程。考慮到傾斜構件33〇 之透射率,傾斜構件330之厚度較佳地具有約15微米之最 大值,傾斜構件330之側傾角較佳地在約12_3 〇度之範圍 内,且傾斜構件330之寬度可視晶疇之寬度而定而變化。 同4,傾斜構件330可具有如圖15中所展示之曲面,圖5 說明一根據本發明之另一實施例的傾斜構件。 參看圖15,傾斜構件330具有一自其中心至靠近其邊緣之 部分的側傾角/?,但是其具有靠近其邊緣大於0之另一側傾 角α。側傾角α及較佳地分別等於或小於約5及1〇度。 參看圖16-20洋細描述根據本發明之另一實施例的[CD。 圖16為根據本發明之一實施例之LCD之TFT陣列面板的 布局圖’圖17為根據本發明之一實施例之[CD之共同電極 面板的布局圖’圖18為包括圖丨6中所展示之TFT陣列面板及 圖17中所展示之共同電極面板之LCD的布局圖,圖19為圖 18中所展示之LCD沿線XIX-XIX,所截得之截面圖,而圖2〇 為圖18中所展示之LCD沿線XX-XX,及χχ,_χχ,,所截得之截 98089.doc -33 - 200527055 面圖。 根據本發明之實施例iLCD包括:一 TFT陣列面板1〇〇、 面向TFT陣列面板1〇〇之共同電極面板2〇〇及一插入該 TFT陣列面板1〇〇與該共同電極面板2⑼之間的層3。 現參看圖16、圖18-20詳細描述TFT陣列面板1〇〇。 複數個閘極線121及複數個儲存電極線131形成於絕緣基 板110上。 用於傳輸閘極訊號之閘極線121大體上以橫向方向延伸 /、彼此刀離。每一閘極線丨21包括形成複數個閘電極1 ,複數個凸出’及一具有與另一層或外部裝置接觸之較大 區域的末端部分12 9。當將閘極驅動電路(未圖示)整合至基 板110上%不可提供末端部分丨29,使得閘極線121直接與閘 極驅動電路接觸。 每-館存電極線131大體上以橫向方向延伸且包括形成 儲存電極135之複數個凸出。每—儲存電極135具有菱形或 旋轉約45度之矩形之形狀且其接近於閘極線121而定位。向 儲存電極線131供應施加至LCD之共同電極面板·上的共 同電極270之諸如通用電壓之預定電壓。 閘極線m及儲存電極線131具有包括具有不同實體特徵 之兩種薄膜(下部薄膜及上部薄臈)的多層結構。上部薄膜較 佳地由包括含銘金屬、含銀金屬、或含銅金屬之低電阻金 屬製成’以減少閑極線121及儲存電極線131中的信號延遲 或電麼p«。另-方面,下部薄膜較佳地由諸如含翻金屬、 鉻、组、或鈦之材料製成,該材料具有良好的物理、化學、 98089.doc -34- 200527055 及與諸如汀〇或120之其它材料之電接觸特徵。下部薄膜材 料及上部薄膜材料之較好例示性組合為鉬及鋁歛合金。在 圖19及20中,閘電極124之下部及上部薄膜分別由參考數字 叫及124q指示,末端部分129之下部及上部薄膜分別由參 考數字129p及129q指示,而儲存電極135之下部及上部薄膜 分別由參考數字吻及叫指示。至少部分地移除閉極線 121之末端部分129之上部薄膜129(1以曝露下部薄膜12叶。 閘極線121及儲存電極線131可具有單一層結構或可包括 三個或三個以上層。 另外,閘極線12 1及儲存電極線13 1之側面相對於基板1 ^ 〇 之表面傾斜,且其側傾角在約30·80度之範圍内變化。 較佳地由氮化矽(SiNx)製成之閘極絕緣層14〇形成於閘 極線12 1及儲存電極線1 3丨上。 較佳地由氫化非晶矽(簡化為”a_Si”)或多晶矽製成之複 數個半V體條紋1 5 1形成於閘極絕緣層1 * 〇上。每一半導體 條紋151大體上以縱向方向延伸同時週期性地彎曲。每一半 導體條紋151具有朝向閘電極124分岔之複數個凸出154。 較佳地由矽化物或大量摻雜7n型雜質之“氫化a_si之 歐姆接觸條紋161及歐姆接觸島狀物165形成於半導體條紋 151上。每一歐姆接觸條紋161具有複數個凸出163,且凸出 163及歐姆接觸島狀物165成對地定位於半導體條紋15丨之 凸出1 54上。 半導體條紋1 5 1及歐姆接觸1 6 1及1 65之側面相對於基板 之表面傾斜’且其側傾角較佳地在約30-80度之間之範圍 98089.doc -35- 200527055 内。 彼此分離之複數個資料線1 71及複數個汲電極1 75形成於 歐姆接觸161及165及閘極絕緣層140上。 用於傳輸資料電壓之資料線171大體上以縱向方向延伸 且與閘極線121及儲存電極線13 1相交。每一資料線1 71具有 一與另一層或一外部裝置接觸之較大區域的末端部分 179,且其包括複數個傾斜部分對及複數個縱向部分使得其 週期性彎曲。將一對傾斜部分彼此連接以形成一人字形, 且將一對傾斜部分之相反端連接至各別縱向部分。資料線 171之傾斜部分與閘極線121成約45度角,且縱向部分越過 閘電極124。一對傾斜部分之長度約為一縱向部分之長度之 一至九倍,即,其佔用該對傾斜部分與該縱向部分之總長 度的約百分之50-90。一對傾斜部分可以三個或三個以上傾 斜部分替代,使得相鄰兩個縱向部分之間的閘極線171之部 分彎曲兩次或兩次以上。 每;及電極175包括-重疊儲存電極135之矩形或菱形擴 大部分。沒電極175之擴大部分之邊緣大體上平行於儲存電 極135之邊緣。貝料線m之每一縱向部分包括複數個凸 使仵I括凸出之縱向部分形成部分地包圍安置於擴大 部分對面线電極175之末端部分的源電極173。—閑電極 ⑶、-源電極173及,極175連同一半導體條紋i5i之 二=154的每一集合形成具有_通道之—該通道形成 於電極173及㈣極叹間的半導體凸出⑽。 -貝枓線m及没電極175亦包括較佳地由翻、翻合金、絡、 98089.doc -36- 200527055 钽、或鈦製成之下部薄膜171p&175p,及定位於其上且較 佳地由含鋁金屬、含銀金屬、或含銅金屬製成之上部薄^ · 171q及175q。在圖4及5中,源電極173之下部及上部薄膜分 · 別由參考數字173p及173q指示,而資料線m之末端部分 179之下部及上部薄膜分別由179p&179q指示。至少部分地 移除資料線171之末端部分179及汲電極175之上部薄膜 179q及175q以曝露下部薄膜i79p及175p。 如同閘極線12 1及儲存電極線1 3 1 —般,資料線171及沒電 極175具有傾斜之側面,且其側傾角在約3〇_8〇度之範圍内 | 變化。 將歐姆接觸161及165僅插入下方之半導體條紋151與其 上之上方資料線171及上方汲電極丨75之間,且減少其間之 接觸電阻。 純化層180形成於資料線171及汲電極ι75以及未覆蓋資 料線171及汲電極175的半導體條紋151之曝露部分上。鈍化 層180較佳地由具有良好平坦性特徵之感光性有機材料、藉 由電渡增強化學氣體沉積(PECVD)形成之諸如a-Si:c:〇及 · tSi:0:F的低介電絕緣材料、或諸如氮化矽及二氧化矽之無 機材料製成。為了阻止半導體條紋15 1之通道部分直接與有 機材料接觸,鈍化層1 80可具有包括下部無機薄膜及上部有 機薄膜之雙層結構。 純化層180具有分別曝露資料線171之末端部分179及汲 包極175的複數個接觸孔182及185。鈍化層180及閘極絕緣 · 層140具有曝露閘極線丨21之末端部分丨29的複數個接觸孔 98_.d〇c -37- 200527055 181。以上所描述之下部薄膜129?、179p及175p之經曝露的 部分分別經由接觸孔1 8 1、1 82及1 85來曝露。接觸孔1 81、 182及185可具有諸如多邊形或圓形之多種形狀。每一接觸 孔181或182之面積較佳地等於或大於〇_5 mmxi5 μιη,且不 大於2 mmx60 /xm。接觸孔181、182及185之側壁以約3〇_85 度角傾斜或具有階梯式之輪廉。 較佳地由諸如ITO或IZO之透明導電材料製成之複數個 像素電極190及複數個接觸助件81及82形成於鈍化層18〇 上。像素電極190可由諸如銀或鋁之不透明反射性材料製成 以用於一反射性LCD。 每一像素電極190大體上定位於由資料線17丨及閘極線 121包圍之區域中,且因此其亦形成人字形。像素電極1 覆蓋包括儲存電極135之儲存電極線131及沒電極175之擴 大部分,且具有經斜切之邊緣,其大體上平行於接近於該 等經斜切邊緣的儲存電極135之邊緣。 藉由在儲存電極線13 1處提供凸出(意即,儲存電 極)135、延長連接至像素電極19〇之汲電極丨乃、並在汲電 極175處提供重疊儲存電極線ι31之儲存電極135之擴大部 分以減小終端之間的距離並增加重疊區域來增大藉由重疊 像素電極190與儲存電極線π 1而建構之儲存電容器之電容 (意即,儲存電容)。 像素電極1 9〇重疊資料線1 71及閘極線12 1以增大孔徑比。 將接觸助件8 1及82分別經由接觸孔1 § 1及1 82連接至閘極 線121之曝露的末端部分及資料線171之曝露的末端部分。 98089.doc •38- 200527055 接觸助件81及82保護曝露之部分129及179且補充曝露部分 129及179與外部裝置之間的黏著力。接觸助件81及82經由 各向異性導電薄膜(ACF)(未圖示)等而連接至外部裝置。 若將接觸助件8 1整合在TFT陣列面板上,則其可充當連 接閘極線121與閘極驅動電路之金屬層。類似地,若將接觸 助件82整合在TFT陣列面板1〇〇上,在其可充當連接資料線 1 71與資料驅動電路之金屬層。 較佳地由絕緣體製成之複數個傾斜構件34丨形成於像素 電極190及鈍化層18〇上。傾斜構件341之每一者具有主要邊 緣及次要邊緣,使得其具有人字形之平面形狀;該等主要 邊緣平行於像素電極190之邊緣,且安置於將像素電極19〇 一等分成左半部及右半部之假想中心線上;該等次要邊緣 平行於閘極線12 1。傾斜構件341之每一者具有安置於資料 線171上且沿其延伸之隆脊,及高度自該隆脊至該等主要邊 緣減少之傾斜表面。 因為傾斜構件341居於資料線ι71及光阻塞構件22〇之中 心,所以可減少可由傾斜構件341產生之光透射率的減小。 另外,傾斜構件341減少由資料線171產生並可扭曲lc分子 0的疋向以產生光點之電場。因此,可增加資料線1 7 1與 像素電極190之間的對準範圍。 取後’可為垂直型之對準層丨丨形成於傾斜構件341上。 以下將參看圖17-19描述共同電極面板2〇〇。 稱為黑色矩陣之光阻塞構件22〇形成於諸如透明玻璃之 、’、巴、’彖基板210上,且其包括面向資料線171之傾斜部分的複 98089.doc -39· 200527055 數個傾斜部分及面向TFT及資料線1 71縱向部分的複數個向 右成角之三角形部分,使得光阻塞構件220阻止像素電極 190之間的光線漏損,且界定面向像素電極19〇之開闊區 域。光阻塞構件220之每一三角形部分具有平行於像素電極 190之經斜切邊緣的斜邊。 複數個彩色濾光片230形成於基板2 10及光阻塞構件22〇 上’且其大體上安置於由光阻塞構件22〇界定之開闊區域 内。相鄰兩個資料線171安置且以縱向方向排列之彩色濾光 片230可彼此連接以形成條紋。每一彩色濾光片23〇可表示 諸如紅色、綠色及藍色色彩之三原色中之一者。 較佳地由有機材料製成之外塗層25〇形成於彩色濾光片 230及光阻塞構件22〇上。外塗層25〇保護彩色濾光片23〇且 具有平坦頂部表面。 較佳地由諸如·ΙΤ0及IZ0之透明導電材料製成的共同電 極270形成於外塗層250上。向共同電極27〇供應通用電壓且 4共同電極270具有複數個類似人字形之切口 79。每一切口 79包括彼此連接之一對傾斜部分、連接至傾斜部分之一者 的橫向部分及連接至傾斜部分之另一者的縱向部分。切口 79之傾斜部分大體上平行於資料線171之傾斜部分而延伸 且面向像素電極19〇,使得其可將像素電極19〇二等分成左 半部及右半部。將切口 79之橫向及縱向部分分別與像素電 極190之杈向及縱向邊緣對準,且其與切口 79之傾斜部分成 鈍角。提供切口 79以控制LC層3中的LC分子310之傾斜方 向且切口 79較佳地具有範圍在約9-12微米之間的寬度。 98089.doc -40- 200527055 切口 79可由形成於共同電極27〇之上或之下的較佳地由有 機材料製成並較佳地具有範圍為約5微米至1〇微米之寬度 的突起所替代。 將可為垂直型之對準層21塗覆於共同電極27〇上。 將一對偏光器12及22提供於面板1〇〇及2〇〇之外部表面, 使知其透射軸相交且該等透射軸中之一者(例如,提供於 TFT陣列面板1〇〇上之偏光器12的透射軸)平行於閘極線 121 °可為一反射性LCD省略偏光器12。 LCD進一步包括插入面板1〇〇與偏光器12之間及面板2〇〇 與偏光器22之間的延遲薄膜13及23。延遲薄膜13及23具有 雙折射且以反向方式補償Lc層3之延遲。延遲薄膜丨3及23 可包括單軸或二軸光學薄膜,且詳言之,其可包括負單轴 光學薄膜。 ' LCD可進一步包括為偏光器12及22、面板1〇〇及200及乙匸 層3提供光線之背光單元。 對準層11及21可為勻質對準層。 LC層3具有負介電各向異性,且對準^(::層3中之分子 3 10使得其長軸在不存在電場之情況下垂直於面板之表 面。因此,入射光不能通過相交之偏光系統丨2及22。 一旦向共同電極270施加通用電壓並向像素電極1 9〇施加 貝料私壓,即產生大體上正交於面板之表面的第一電場。 LC分子3 1〇趨於回應該電場而改變其定向使得其長軸正交 ;豕方向同日t,共同電極270之切口 79及像素電極190 之邊緣扭曲該第一電場以具有決定LC分子3 10之傾斜方向 98089.doc -41 - 200527055 的水平組份。第一電場之水平組份正交於切口 79之邊緣及 像素宅極1 90之邊緣。第一電場之水平組份在切口之對面邊 緣處為反平行的。 因此,由像素電極190之邊緣、二等分像素電極190之切 口 79及通過共用切口 79之傾斜部分的交匯點之假想橫向中 心線分割的具有不同傾斜方向之四個子區形成於Lc層3之 像素區中,該等四個子區定位於像素電極i 9〇上。每一子區 具有分別由切口 79及像素電極190之傾斜邊緣界定的兩個 主要邊緣,該等邊緣較佳分隔自約丨〇微米至約3〇微米之距 離。若像素區之平面面積小於約1〇〇><3〇〇平方微米,則像素 區中之子區的數目較佳地為四,且若像素區之平面面積不 小於約100x300平方微米,則該數目較佳地為四或八。子區 之數目可藉由改變共同電極270之切口 79之數目、藉由在像 素私極190處提供切口或藉由改變像素電極19〇之邊緣之彎 曲點之數目而改變。基於傾斜方向將子區分類成複數個(較 佳為四個)晶疇。 同時,歸因於像素電極19 〇之間的電壓差異之第二電場之 方向正父於切口 79之邊緣。因此,第二電場之場方向與第 電%之水平組份的場方向一致。因此,像素電極i 之間 的第二電場增強了 LC分子3 10之傾斜方向的判定。 因為LCD執行諸如點反轉、行反轉等之反轉,所以向相 鄰像素電極供應具有關於通用電壓之相反極性的資料電 壓’且因此幾乎總是產生相鄰像素電極19〇之間的第二電場 以增強晶疇之穩定性。 98089.doc -42- 200527055 現將參看圖21A、21B、22A及22B以及圖16-20來詳細描 述根據本發明之一實施例製造圖16-20中所展示的TFT陣列 面板之方法。 圖21A及21B為圖16及圖18-20中所展示之TFT陣列面板 在根據本發明之一實施例之其製造方法的中間步驟中分別 沿線XIX-XIX,及線XX-XX,及ΧΧ,-ΧΧ”所截得之截面圖,而 圖22Α及22Β為圖16及圖18-20中所展示之TFT陣列面板在 遵循圖21A及21B中所展示之步驟的製造方法之步驟中分 別沿線XIX-XIX’及線XX-XX’及χχ’_χχ”所截得之截面圖。 參看圖16、21A及21B,較佳地由鉻、鉬、或鉬合金製成 之下部導電薄膜及較佳地由含鋁金屬或含銀金屬製成之上 部導電薄膜順序地濺鍍在絕緣基板11 〇上,且將其順序地濕 式或乾式餘刻以形成包括閘電極12 4及末端部分12 9之複數 個閘極線12 1、及包括儲存電極13 5之複數個健存電極線 131。在圖21A及21B中,閘電極124之下部及上部薄膜分別 由參考數字124p及124q指示,末端部分129之下部及上部薄 膜分別由參考數字129p及129q指示,而儲存電極U5之下部 及上部薄膜分別由參考數字135?及135q指示。 在順序地沉積了具有約1,500-5,000 A之厚度的閘極絕緣 層140、具有約500-2,000人之厚度的内在a_Si層及具有約 300-600 A之厚度的外在a-Si層之後,將外在^以層及内在 a-Si層光#刻以在閘極絕緣層14〇上形成包括凸出I”的複 數個外在半導體條紋及複數個内在半導體條紋151。 接著,將包括下部導電薄膜及上部導電薄膜且具有 98089.doc -43 - 200527055 1’500 3,GGG A之厚度的兩個導電薄膜順序地賤,且將其 圖案化以$成包括源電極173及末端部分m的複數個資料 線⑺,及後數個汲電極175。下部導電薄膜較佳地由鉻、 麵、或銷合金製成,而上部導電薄膜較佳地由含紹金屬或 含銀金屬製成。在圖21A及則中,資料線⑺之下部及上 部薄膜^別由參考數字mpM71q表示,源電極Μ之下部 及上部薄膜分別由參考數字⑺!)及173q表示,汲電極175 之下部及上部薄膜分別由參考數字17祚及17恥表示,而資 料線171之末端部分179之下部及上部薄膜則分別由參考數 子179p及179q表示。 其後,將未覆蓋以資料線丨7丨及汲電極丨75的外在半導體 條紋之部分移除,以完成包括多個凸出163之複數個歐姆接 觸條紋161及複數個歐姆接觸島狀物165,並曝露内在半導 體條紋15 1之部分。較佳地隨後進行氧電漿處理以穩定半導 體條紋15 1之曝露表面。 參看圖16、22 A及22B,塗覆由感光性有機絕緣體製成之 鈍化層180,且其經由具有複數個不透明區域8〇3、複數個 透射區域802及安置於透射區域802周圍之複數個狹縫區域 801的光罩800而曝光。因此,面向透射區域802的鈍化層180 之部分吸收光之全部能量,而面向狹縫區域80 1的鈍化層 1 80之部分則部分地吸收光能量。接著,顯影鈍化層1 8〇以 形成分別曝露出資料線171之末端部分179及汲電極175之 部分的複數個接觸孔18 2及18 5 ’並形成曝露安置於閘極線 121之末端部分129上之閘極絕緣層140之部分的複數個接 98089.doc -44- 200527055 觸孔181之上部部分。因為將面向透射區域8〇2之鈍化層ι8〇 之部分的全部厚度移除掉,而面向狹縫區域丨之部分保留 有減少之厚度’所以接觸孔181、182及185之側壁具有階梯 式之輪廓。圖22 A及22B中之鈍化層180的陰影線部分為待 移除之部分,且當鈍化層18〇為負光阻時透射區域8〇2與不 透明區域801可互換。 在移除閘極絕緣層14〇之經曝光部分以曝露閘極線! 21之 末端部分129之下方的部分之後,移除汲電極175、資料線 171之末端部分179,及閘極線121之末端部分129的上部導 電薄膜H5q、179q及129q之經曝光部分以曝露汲電極175、 資料線171之末端部分179,及閘極線m之末端部分129之 下部導電薄膜175p、179p及129p之下方的部分。 緊接著,如圖16及18-20中所示,藉由濺鍍並光蝕刻具有 約400-500 A之厚度的IZ0或IT0層來在鈍化層18〇及汲電極 175、資料線171之末端部分179,及閘極線ι21之末端部分 129之下部導電薄膜1751)、129ρ&179ρ之曝露部分上形成複 數個像素電極190及複數個接觸助件8 1及82。 最後’將正感光性有機絕緣層塗覆於共同電極27〇上;經 由具有光透射區域及半透明區域之光罩(未圖示)使其經受 曝光;並對其進行顯影以形成複數個傾斜構件341。此時, 光罩可具有面向諸如TFT、閘極線121或資料線171之不透明 構件的光阻塞區域,使得複數個柱狀分隔片(圖4中所展示) 形成於不透明構件上。 參看圖23_25詳細描述根據本發明之另一實施例的LCD。 98089.doc -45- 200527055 圖23為根據本發明之另一實施例之一 [CD的布局圖,而 圖24及25為圖23中所展示之LCD分別沿線XXIV-XXIV,及 XXV-XXV’所截得之截面圖。 參看圖23-25,根據此實施例之LCD亦包括··一 TFT陣列 面板100、一共同電極面板2〇〇、插入面板與2〇〇之間的 LC層3及複數個柱狀分隔片32〇,及附著在面板1〇〇及2〇〇之 外部表面上之一對偏光器12及22及一對延遲薄膜13及23。 根據此實施例之面板1〇〇及2〇〇之分層結構幾乎與圖 16-20中所展示之彼等結構一樣。 關於TFT陣列面板1〇〇,包括閘電極124及末端部分129的 複數個閘極線121及複數個儲存電極線ι31形成於基板u〇 上,且閘極絕緣層140、包括凸出154之複數個半導體條紋 151,及包括凸出163之複數個歐姆接觸條紋ι61及複數個歐 姆接觸島狀物165順序地形成於其上。包括源電極173及末 知部分1 79之複數個資料線1 71及複數個汲電極1 75形成於 歐姆接觸161及165上,且鈍化層18〇形成於其上。在鈍化層 180及閘極絕緣層140處提供複數個接觸孔18卜182及185, 且複數個像素電極1 90及複數個接觸助件8 1及82形成於鈍 化層180上。複數個傾斜構件341形成於像素電極190及鈍化 層180上,且一對準層丨丨塗覆於其上。 關於共同電極面板200,一光阻塞構件220、複數個彩色 濾光片230、一外塗層250、一具有複數個切口 之共同電 極270及一對準層21形成於絕緣基板21〇上。200527055 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a liquid crystal display and a panel thereof. [Prior art] Liquid crystal display (LCD) is one of the most widely used flat panel displays. The LCD includes two panels having a field generating electrode such as a pixel electrode and a common electrode, and a liquid crystal (LC) layer interposed therebetween. The LCD displays an image by applying a voltage to a field generating electrode to generate an electric field in the LC layer. The electric field determines the orientation of LC molecules in the LC layer to adjust the polarization of incident light. Among LCDs, because of the high contrast ratio and wide reference viewing angle, the alignment of LC molecules makes the long axis of LC molecules orthogonal to the panel in the absence of an electric field. The vertical alignment (VA) mode LCD is more prominent. This angle of view is defined as an angle of view with a contrast ratio equal to 1:10 or a critical angle for brightness conversion between gray scales. The wide viewing angle of the VA mode LCD can be achieved by a cut in the field generating electrode and a protrusion on the field generating electrode. Because the cutouts and the protrusions can determine the tilt direction of the LC molecules, the reference angle can be widened by using the cutouts and the protrusions to distribute the tilting direction to several directions. However, LCDs with cutouts or protrusions may have longer response times. This is because the oblique direction of the liquid crystal molecules that are away from the notches and protrusions is determined by the pushing of the liquid crystal molecules on the field-generating electrode or the collision of the liquid crystal molecules with the field-generating electrode, and therefore the alignment of the liquid crystal molecules is unstable and irregular. Although the response time can be improved by separating the cuts tightly, this can lead to a reduction in the aperture ratio. 98089. doc 200527055 [Summary of the Invention] The purpose of the present invention is to solve the problems of the conventional technology. The present invention provides a liquid crystal display including: a substrate; a field generating electrode formed on the substrate; and an inclined member formed on the substrate and having a roll angle of less than about 45 degrees. The roll angle may be less than about 20 degrees, preferably in a range of about ⑺-⑺ degrees, and more preferably in a range of about 1 to 5 degrees. The inclined member may have a gradually decreasing height. The inclined member may have a curved surface. The inclined member may include a raised ridge. The field generating electrode may have a protrusion, and the inclined member may have a ridge substantially conforming to the protrusion. 4 The tilting member may have a ridge substantially conforming to the edge of the field generating electrode. The inclined member may include a photosensitive organic insulator. The 30H tilting member can be placed on the field generating electrode. The LCD panel may further include an alignment layer disposed on the inclined member. The present invention provides a liquid crystal display, which includes: a substrate; a first field generating electrode formed on a base substrate; a second field generating electrode disposed opposite the first field generating electrode; and a first field generating electrode A liquid crystal layer between the field generating electrode and the second field generating electrode; and an inclined member formed on the substrate and having an inclined surface that reduces a response time of the liquid crystal layer. The roll angle may be in the range of about 1-10 degrees. 98089. doc 200527055 The inclined member may have a decreasing height. The liquid crystal display may further include a first tilt direction determining member that determines a tilt direction of the liquid crystal molecules in the liquid crystal layer when an electric field is applied. The first tilt direction determining member may include a first cutout at the first field generating electrode. The inclined member may be disposed on the second field generating electrode 2. The tilting member may have a ridge alternately arranged with the first cutout, and the ridge of the whale tilting member may be substantially the same as the edge of the first field generating electrode-so that the liquid crystal display may further include-the second tilting direction The determining means includes a second cutout at the second field generating electrode. The tilting member may have a ridge that substantially coincides with the second cutout. /. The inclined member may include an edge body having a dielectric constant equal to or smaller than that of the liquid crystal layer. The β «Hy liquid sa layer may have negative anisotropy and undergo vertical alignment. The $ field generating electrode may have an edge overlapping the second field generating electrode, and the second field generating electrode may not have a cutout. . The helical inclined member may have a thickness in a range of about 0.5 to 20 microns. The present invention provides a liquid crystal display panel comprising: a substrate; a gate line 'a data line intersecting with a first signal line; a thin film transistor connected to the gate line = the data line; A pixel electrode of the thin film transistor; and an inclined member disposed on the pixel electrode and having a roll angle of less than about 45 degrees. The roll angle may be in the range of about MO degrees. The inclined member may have a curved surface. The tilting member may include a 98089 substantially disposed on an edge of the pixel electrode. doc 200527055 Ridge. And the pixel electrode may have the lean line and the pixel electrode may be curved with a convex edge and a concave edge parallel to the convex edge. The pixel electrode may have all openings, and the inclination member may include a ridge which is consistent with the cutout of the pixel electrode. The cut may have anti-symmetric properties regarding the division of the pixel potential into upper and lower half lines.卞 丨 The cutout may extend obliquely to the gate line. The a-hai cut may be at an angle of about 45 degrees to the gate line.忒 The liquid crystal display panel may further include storage electrodes a, y placed on the same layer as the gate line and overlapping the pixel electrodes. The present invention provides a liquid crystal display panel including: a substrate. A field-generating electrode formed on the substrate and having a first region and a plurality of inclined members disposed on the field-generating electrode, the plurality of inclined members having inclined surfaces, and ㈣A in the first region- Half the area. The tilting member may have a periodic repeating minimum single 7L pattern 'disposed in the first and second domains, and the first region may include a plurality of second regions. The roll angle may be in the range of about 1-10 degrees. " The helium field generating electrode can substantially completely cover the substrate. The inclined member may include a ridge protruding upward. The field generating electrode may have a notch, and the inclined member may include a ridge generally consistent with the notch. The inclined member may have a diameter of about 0.5-2. Thickness in the range of 0 microns. The inclined member may include a photosensitive organic insulator. 98089. doc • 10- 200527055 The present invention provides a liquid crystal display including: a first substrate; a plurality of first field generating electrodes formed on the first substrate; a second substrate facing the first substrate; A second field generating electrode on the second substrate, a liquid crystal layer disposed between the first field generating electrode and the second field generating electrode, and formed on one of the first and second field generating electrodes Each of the inclined members has a height gradually decreasing from the ridge. The inclined member may have a variation surface in a range of about a degree. Each of the first field generating electrodes may have a first area, and each of the inclined members may occupy an area larger than a half of the first area. The inclined member can reduce the response time of the liquid crystal layer. The liquid crystal display may further include determining a tilt direction of the liquid crystal molecules of the liquid crystal layer t under the application of an electric field, and setting a first tilt direction determining member, wherein the tilt members are disposed on the substrate and are aligned with the first tilt directions. The decision components are arranged alternately. The first tilt direction determining member may include a plurality of first cuts at the first field generating electrode. The liquid crystal display can further include determining a plurality of second tilt direction determining members for determining a tilt direction of the liquid crystal molecules in the liquid crystal layer when an electric field is applied, and the second tilt direction determining members are disposed on the second substrate. The ridges of the inclined members may be substantially consistent with the second inclined direction determining members. The second tilt direction determining members may include a third field generating electrode 98089. doc 200527055 with multiple second cuts. The liquid crystal display may further include a plurality of first tilting direction determining members that determine a tilting direction of the liquid crystal molecules in the liquid crystal layer under an applied electric field and are disposed on the second substrate, wherein the tilting members are disposed on the first substrate. And the first-inclined direction determining members are alternately arranged. The first oblique direction comparison members may include a plurality of first cuts at the second field generating electrode. The liquid crystal display may further include a plurality of second tilting direction determining members that determine the tilting direction of the liquid crystal molecules in the liquid crystal layer when an electric field is applied, and are disposed on the first substrate. These inclined members are generally consistent with the material: the inclined direction determining member. The second inclined direction determining members may include a plurality of second cutouts at the first-field generating electrode. [Embodiment] Now, it will be described below The invention is described more fully with reference to the accompanying drawings that illustrate preferred embodiments of the invention. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the text, the thicknesses of layers, films, and regions are exaggerated for clarity. The same numbers in Wang Wen indicate the same elements. It should be understood that when an element such as a layer, film, region, or substrate is called, Above, and, it may be directly on another element or there may be intervening elements. Conversely, when an element is referred to as being "directly on" another element, there is no intervening element. Reference will now be made to the accompanying Schematic description of a liquid crystal display 98089 according to an embodiment of the present invention. doc -12- 200527055 device and thin film transistor (TFT) array panel for LCD. An LCD according to an embodiment of the present invention will now be described in detail with reference to FIGS. 1-4. FIG. 1 is a layout diagram of a TFT array panel of an LCD according to an embodiment of the present invention; FIG. 2 is a layout diagram of a common electrode panel of an LCD according to an embodiment of the present invention; The layout of the LCD of the TFT array panel and the common electrode panel shown in FIG. 2; and FIG. 4 is a cross-sectional view taken along line IV-IV of the LCD shown in FIG. 3. An LCD according to an embodiment of the present invention includes a TFT array panel 100, a common electrode panel 200, and an LC layer 3 interposed between the panels 100 and 200. The TFT array panel 100 will now be described in detail with reference to FIGS. 1, 3 and 4. A plurality of gate lines 121 and a plurality of storage electrode lines 131 are formed on an insulating substrate 110 such as transparent glass. The gate lines 121 extend substantially in a lateral direction and are separated from each other and transmit gate signals. Each gate line 121 includes a plurality of protrusions forming a plurality of gate electrodes 124, and an end portion 29 having a larger area for contact with another layer or an external driving circuit. The gate line 121 can be extended to connect a driving circuit which can be integrated on the TFT array panel 100. Each of the storage electrode lines 13 1 extends substantially in a lateral direction and is disposed between two adjacent gate lines 21 and is close to the upper one of the two gate lines 12 i. Each storage electrode line 131 includes a set of a plurality of branches 133a-133d and a plurality of connections 133e connecting the branches 133a-133d. The set of branches 133a-133d includes two longitudinal branches forming first and second storage electrodes 133a and 133b and separated from each other, and forming third and fourth storage electrodes 133 (: and 133d and Connected to the first and second 98089. doc -13- 200527055 Two oblique branches between storage electrodes 133a and 133b. In detail, the first storage electrode 133a has a free end portion and a fixed end portion connected to the storage electrode line 131 and has a protrusion. The third and fourth storage electrodes 133c and 133d extend from the vicinity of the center of the first storage 133a and the upper and lower ends of the second storage electrode 133b, respectively. Each connection I33e is connected between a first storage electrode 133 & set of one of the storage electrodes 133a-133d and a second storage electrode 133b of the other set of its adjacent storage electrodes 133a-133d. A predetermined voltage such as a universal voltage is supplied to the storage electrode line 131, which is applied to a common electrode 27 of the common electrode panel 200 of the LCD. Each of the storage electrode wires 131 may include a pair of rods extending in a lateral direction. The gate wire 121 and the storage electrode wire 131 are preferably made of an aluminum-containing metal such as aluminum and an aluminum alloy, a silver-containing metal such as silver and a silver alloy, a copper-containing metal such as copper and a copper alloy, and a metal such as molybdenum and a molybdenum alloy. Made of molybdenum-containing metal, chromium, titanium or buttons. The gate line 121 and the storage electrode line 131 may have a multi-layered structure including two thin films having different physical characteristics. One of the two films is preferably made of a low-resistance metal including an aluminum-containing metal, a silver-containing metal, and a copper-containing metal to reduce the signal delay or voltage drop in the gate line 121 and the storage electrode line 131. . The other thin film is preferably made of a material such as a molybdenum-containing metal, chromium, button, or titanium, which has good physical, chemical, and Characteristics of electrical contact of materials. A good example of a combination of these two films is a lower chromium film and an upper chain alloy film, and a lower aluminum film and an upper molybdenum film. In addition, the side of the gate electrode line 121 and the storage electrode line 131 is opposite to the substrate 98089. doc -14- 200527055 The surface is inclined, and its roll angle varies within the range of about 20-80 degrees. A gate insulating layer 140 preferably made of silicon nitride (SiNx) is formed on the gate lines 12 1 and the storage electrode lines 1 3 1. A plurality of semiconductor stripes 151, preferably made of hydrogenated amorphous silicon (simplified as "a-Si") or polycrystalline silicon, are formed on the gate insulating layer 140. Each semiconductor stripe 151 extends substantially in the longitudinal direction and has a plurality of protrusions 154 that branch toward the gate electrode 124. The semiconductor stripe 15 1 is widened near the gate line 121 and the storage electrode line 131, so that the semiconductor ι51 covers a larger area of the gate line 121 and the storage electrode line 13 1. The ohmic contact stripes 161 and ohmic contact islands 165 preferably formed of silicide or a large amount of n + hydrogenated a-Si filled with n-type impurities are formed on the semiconductor stripes 151. Each of the ohmic contact stripes 16 丨 has a plurality of protrusions 163, and the protrusions 163 and the ohmic contact islands 165 are positioned on the protrusions 154 of the semiconductor stripes 151 in pairs. The sides of the semiconductor stripe 151 and the ohmic contacts 161 and ι65 are inclined relative to the surface of the substrate ', and their roll angles are preferably in a range between about 30 and 80 degrees. A plurality of data lines 171, a plurality of drain electrodes 175 separated from the data line 171, and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 16 1 and 165 and the gate insulating layer 14. The data lines 7 for transmitting data voltages extend generally across the gate line 121 in a longitudinal direction and at a right angle. The data line 171 also intersects the storage electrode line 131 and the connection 133e such that each data line 171 is placed in the first and second storage electrodes 98089 in the adjacent set of branches l33a-l33d of the storage electrode line 131. doc -15- 200527055 between 133a and 133b. Each data line 171 includes an end portion 179 having a larger area for contact with another layer or outer casing. Each data line 171 includes a plurality of source electrodes protruding toward the drain electrode 175. Each of the drain electrodes 175 includes an end portion having a larger area for another layer and / or another end portion disposed on the gate electrode 124 and partially surrounded by the source electrode 173 to contact. A gate electrode 124, a source electrode 173, and a drain electrode 175 are connected to one of the protrusions 154 of the same semiconductor 151 to form an eight-channel TFT. The channel is formed on the projection disposed between the source electrode 173 and the drain electrode 175. 154. The female to female member 178 is placed on the gate line 121 near the end portion of the storage electrode 133a. The data line 171, the drain electrode 175, and the metal member 178 are preferably made of a refractory metal such as a platinum, a platinum, a metal, a group, or an alloy thereof. However, it may also have a multilayer structure including a low-resistance film (not shown) and a good contact film (not shown). A good example of this combination is the combination of the lower molybdenum film, " 1 aluminum film, and j-key film ' Like the gate line 121 and the storage electrode line 131, the data line 171 and the non-electrode 175 have inclined sides, and their roll angles are changed within the range of approximately degrees. The ohmic contacts 161 and 165 are only: ^ λganπ is only inserted between the semiconductor stripe 1 5 1 below it and the upper data above it, the line 171 and the upper branch electrode 175, and the contact resistance between them is less. Semiconductor bar ^ M s] Seven, 1515 1 Including part of the location between the source electrode 1 73 and the drain electrode 17 5 廿 廿 土 费 # P of the uncovered tributary line 171 and the drain electrode 175 98089 . doc -16- 200527055 multiple exposed sections. Although the semiconductor stripe 151 is narrower than the data line 171 in most places, as described above, the width of the semiconductor stripe 151 becomes larger near the gate line 12 i and the storage electrode line 13 1 to smooth the contour of the surface, thereby Prevent data line 171 from being disconnected. The passivation layer 180 is formed on the exposed portions of the data lines 171, the drain electrodes 175, the metal pieces 178, and the half-stripes 151. The passivation layer 1 8 is preferably formed of an inorganic insulator such as silicon nitride or silicon dioxide, a photosensitive organic material having good flatness characteristics, or such as a-Si formed by plasma enhanced chemical gas deposition (PEVCD). : C: 0 and a-Si: 0: F are made of low dielectric insulating materials with a dielectric constant lower than 4.0. The passivation layer i 80 may have a double-layered structure including a lower inorganic film and an upper organic film. The passivation layer 180 has a plurality of contact holes 182 and 185 exposing a terminal portion 179 of the data line 171 and a terminal portion of the drain electrode 175, respectively. The passivation layer 180 and the gate insulating layer 140 have a plurality of contact holes 18 exposing the end portion 1 29 of the gate line 1 7 1 to expose a portion of the storage electrode line 13 1 near the fixed end portion of the first storage electrode 133a. The plurality of contact holes 83a, and the plurality of contact holes 183b protruding from the free end portion of the first storage electrode 133a are preferably made of a transparent conductor such as ITO or IZ0 or a reflective conductor such as silver or aluminum A plurality of pixel electrodes 190, a plurality of contact assistants 81 and 82, and a plurality of bridges (oVerpaSS) 83 are formed on the passivation layer 180. The pixel electrode 190 is physically and electrically connected to the drain electrode 175 via the contact hole 185, so that the pixel electrode 190 receives the data voltage from the drain electrode 175. 98089. doc 200527055: The pixel electrode 190 with a shell voltage and the common electrode 270 should generate an electric field that determines the orientation of the liquid crystal molecules 31 in the liquid crystal layer 3. The pixel electrode 190 and the common electrode 270 form a liquid crystal capacitor that stores a known applied voltage after the TFT is turned off. An additional capacitor called "storage capacitor" provided in parallel with the liquid crystal capacitor is provided to enhance the voltage storage capacity. The storage capacitor is constructed by the Chongfeng pixel electrode 190 and the storage electrode line 131 including the storage electrodes 133a-133d. The letter pixel electrode 190 is beveled at its left corner, and the beveled edges of the pixel electrode 19 are at an angle of about 45 degrees with the gate line 121. Each pixel electrode 190 has a pixel electrode 90 divided into a plurality of numbers. One of the sub-portions is a lower cutout 92a, a middle cutout 91, and an upper cutout 92b. The cutouts 91-92b generally have an antisymmetric property with respect to an imaginary lateral line that divides the pixel electrode 190 in half. The right edge near the upper right corner of the pixel electrode 190 extends approximately obliquely into the left edge of the pixel electrode 19 and the second and fourth staggered electrodes 133c and 133d. Place the lower and upper cutouts 92a and 92b, respectively. At the lower half and upper half of the pixel electrode 190 that can be separated by the imaginary horizontal line. The lower and upper cutouts 92a and 92b make an angle of about 45 degrees with the gate line 121, and the large The central cutout 91 extends along the imaginary transverse line and has an entrance from the right edge of the pixel electrode 190, which has a pair of inclined edges substantially parallel to one of the lower cutout 92a and the upper cutout 92b, respectively. The lower half of the pixel electrode 19 is divided into two lower sub-portions by the lower notch 92a, and the pixel electrode i 90 is 98089 by the upper notch 92b. doc -18- 200527055 The upper half is split into two upper subsections. The number of sub-sections or the number of cutouts varies depending on the following design factors such as the size of the pixels, the ratio of the rank edge to the vertical edge of the pixel electrode, the type and characteristics of the liquid crystal layer 3, and so on. The contact assistants 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 via the contact holes 181 and 182, respectively. The contact aids 81 and 82 protect the end portions 129 and 179 and supplement the adhesion between the end portions 129 and 179 and the external device. . The exposed protrusion of the bridge crossing line 83 across the gate line 121 and connected to the fixed end portion of the first storage electrode 133a and the exposed portion of the storage electrode line 131 via the contact holes 1 83b and 183a, respectively, the exposure protrusion and the exposed portion The exposed portions are disposed opposite each other with respect to the gate line 121. The bridge line 8 3 overlaps the metal piece 17 $ and can be electrically connected to the metal piece 178. The storage electrode line 131 including the storage electrode 133 and 133 € 1 together with the bridge line 83 and the metal piece 78 are used to repair the failure of the gate line 121, the data line 17b, or the TFT. The gate line 121 is electrically connected to the bridge line 83 by a laser beam illuminating the intersection of the gate line 121 and the bridge line 83, thereby obtaining the gate line 121 and storage for repairing the gate line 121 Electrical connection between the electrode lines 131. In this situation, the metal member 178 enhances the electrical connection between the gate line 121 and the bridge line 83. A collection of a plurality of inclined members 33 UMb, which are preferably made of an insulator, is formed on the pixel electrode 190 and the passivation layer 180. The dielectric constant of the inclined member 331_333b is preferably equal to or smaller than the dielectric constant of the LC layer 3. Each set of the tilting members 33 1-333b includes four tilting members 33 1-333b disposed on the pixel electrode 910. Each of the inclined members 33 1-333b has a major edge and a minor edge such that it has a trapezoidal, triangular, or herringbone plane 98089. doc -19- 200527055 shape; these major edges are parallel to the edges of the cutouts 91-92b and the beveled left edge of the pixel electrode 190 and are placed between the cutouts 91-92b or the cutouts 91 a and 92b of the pixel electrode 190 And its beveled left edge; these minor edges are parallel to the gate line 121 or the data line 171. Each of the inclined members 33 1-333b has a ridge extending approximately along the centerline of the cutout 92a & 92b, the edge of the cutout 91, or the beveled edge of the pixel electrode 19, and extends along it. Declined surface from ridge to main edge. The height of the ridge is preferably about 0. 5-2. In the range of 0 micrometers, and the roll angle Θ of the inclined surface with respect to the surface of the substrate 110 is preferably less than about 45 degrees and more preferably in the range of about 1-10 degrees. The inclined surface may be straight or curved, and the roll angle of the curved surface may be defined as the average roll angle or the length of the right triangle with the height of the right and bottom edges that connect the top of the inclined member 33 l-333b and the side of the side point. The arc tangent of the ratio. Preferably, the set of the tilting members 331-333 occupies an area equal to or larger than one-half of the pixel electrode 190. The inclined members 3 3 1-3 3 3 b of the adjacent pixel electrodes 190 may be connected to each other. The common electrode panel 200 will be described below with reference to FIGS. 2-4. A light blocking member 220 called a black matrix (Mack matdx) for preventing light leakage is formed on an insulating substrate 21 such as transparent glass. The light blocking member 22 may include a plurality of openings 225 'facing the pixel electrode 19 and may have a planar shape substantially as the pixel electrode 19. In addition, the light blocking member 220 may include a linear portion corresponding to the data line i7i and other portions corresponding to the TFT. A plurality of color filters 230 are formed on the substrate 21, and the color filter 230 can be substantially 98089 in the area surrounded by the light blocking member 220. doc -20- 200527055 extends in the longitudinal direction along the pixel electrode 190. The color filter 230 may represent one of primary colors such as red, green, and blue colors. An overcoat 250 for preventing the color filter 230 from being exposed and for providing a flat surface is formed on the color filter 230 and the light blocking member 220. A common electrode 270, preferably made of a transparent conductive material such as ITO and IZO, is formed on the overcoat layer 250. The common electrode 270 has a set of a plurality of cutouts 7 1-72b. The set of the cutouts 71-72b faces the pixel electrode 19 and includes a lower cutout 72a, a central cutout 71, and an upper cutout 72b. Each of the cutouts 71_72b is placed between adjacent cutouts 91-92b of the pixel electrode 190 or between the cutouts 92a or 92b of the pixel electrode 190 and the beveled edge of the pixel electrode 190. In addition, each of the cutouts 71-72b has at least one inclined portion extending parallel to the lower cutout 92a or the upper cutout 92b of the pixel electrode 19, and adjacent two of the cutouts 71-72b and 91-92b that are parallel to each other. The distance therebetween, its inclined portion, its inclined edge, and the chamfered edge of the pixel electrode 19 are substantially the same. The cutouts 71-72b are generally antisymmetric with respect to the lateral lines of the bisected pixel electrode 190 described above. Each of the lower and upper cutouts 72a and 72b includes an inclined portion extending approximately from the left edge of the pixel electrode 190 to the lower or upper edge of the pixel electrode 190, and along the pixel electrode 19 from respective ends of the inclined portion. The horizontal and vertical portions extending from the edge of 〇, overlapping the edge of the pixel electrode 19 and forming a pure angle with the inclined portion. The center cut includes: approximately from the left edge of the pixel electrode 19〇 along the 98089. doc 200527055 A lateral central portion extending from the three storage electrodes 133c; a pair of inclined portions extending approximately from the end of the central lateral portion to the right edge of the pixel electrode and forming an obtuse angle with the central lateral portion; Extending along the right edge of the pixel electrode 190, overlapping the right edge of the pixel electrode 19, and forming an obtuse angle with each of the oblique portions, the pair of terminal longitudinal portions ... ㈣ ㈣ longitudinal portion) ° The number of cutouts 71-72b may depend on design factors And change, and the light blocking member 220 may also overlap 71-72b to block the light leakage through the cutouts 71-721). A plurality of columnar spacers 32, which are preferably made of an insulator, are formed between the TFT array panel 100 and the common electrode panel 200. The separator 32 contacts the passivation layer 18 of the TFT array panel 100 and the common electrode 270 of the common electrode panel 2000, so that it supports the gap between the panels 100 and 200. The separator 32 may be made of a layer such as the inclined member 33 1-333b or may be inserted into the passivation layer ι80. The homeotropic alignment layers 11 and 21 are applied to the inner surfaces of the panels 100 and 200, and polarized light is provided on the outer surfaces of the panels 100 and 200 ^ § 12 and 22 so that their polarization axes can intersect And one of the transmission axes may be parallel to the gate line 121. When the LCD is a reflective LCD, one of the polarizers may be omitted. The LCD may further include at least one retardation film (not shown) for compensating the retardation of the LC layer 3. The retardation film has birefringence and gives a retardation opposite to that given by the LC layer 3. The retardation film layer may include a uniaxial or biaxial optical compensation film, and in particular, it may include a negative uniaxial compensation film. The LCD may further include polarizers 12 and 22, a retardation film, and a panel 98089. doc -22- 200527055 100 and 200 backlight units (not shown) that supply light to the LC layer 3. Preferably, the LC layer 3 has negative dielectric anisotropy and undergoes vertical alignment, that is, the LC molecules 310 in the LC layer 3 are aligned so that their long axes are substantially perpendicular to the panel 1 in the absence of an electric field. 〇 and 2000。 The surface. As shown in FIG. 3, the set of cuts 91_92b and 71-72b divides the pixel electrode 190 into a plurality of sub-regions, each of which has two main edges. The cutouts 91-92b and 71-72b and the inclined members 33 1-332b control the inclination direction of the LC molecules in the LC layer 3. This will be described in detail. Once a common voltage is applied to the common electrode 270 and a data voltage is applied to the pixel electrode 19, an electrical% is generated which is substantially orthogonal to the surface of the panel 100 and 2000. The LC molecule 3 10 tends to change its orientation to respond to the electric field so that its long axis is orthogonal to the direction of the electric field. The slits 91-92b and 71_72b of electrodes 190 and 270 and the edges of pixel electrode 19 are distorted by the electric field to have a horizontal component substantially orthogonal to the edges of slits 91_9 and 71-72b and the edge of pixel electrode 190. Therefore, the LC molecules on each sub-region are tilted in one direction by the horizontal component, and the azimuth of the tilt direction is divided into four directions, thereby increasing the viewing angle of the LCD. Similarly, in the absence of an electric field, the LC molecule 310 is pre-tilted by the tilting member 33, M, and the pre-tilt direction of the LC molecule 31 is determined by the tilt direction of the molecule 310 after the electric field is applied. The incisions 91_92] 3 and 71_721? Have the same tilt direction. In addition, the inclined member 33 le332b with a varying thickness twists the equipotential line of the electric field, and the distortion of the equipotential line generates a tilting force, which is also equivalent to 98089. doc -23- 200527055 When the dielectric constant of the inclined member 33 1-332b is lower than the dielectric constant of the LC layer 3, the inclination directions determined by the notches 91-92b and 7 l-72b are the same. Therefore, the tilt direction of the LC molecules 310 away from the chamfered edges of the cutouts 91-92b and 71-72b and the pixel electrode 19 is also determined to reduce the response time of the Lc molecule 3 10. At least one of the cutouts 91-92b and 71-72b may be replaced by a protrusion (not shown) or a depression (not shown). The protrusions are preferably made of an organic or inorganic material and are disposed above or below the field generating electrode 190 or 270. The shape and arrangement of the cuts 91_92b and 71-72b can be modified. g Because the tilt direction of all crystal domains is at an angle of about 45 degrees with the gate line 121 parallel or orthogonal to the edges of the panels 100 and 200, and the tilt direction intersects with the 45 degrees of the transmission axis of the polarizers 12 and 22 The polarizers 12 and 22 can be attached so that the transmission axes of the polarizers 12 and 22 are parallel or orthogonal to the edges of the panels 100 and 200, and the production cost can be reduced. For having 1. 9. ,1. 8. , And 1. 1. The tilting member of the roll angle is used to measure the response time Ttot of the liquid crystal, which is illustrated in the table shown in FIG. 5. The response time Ttot of the liquid crystal includes a loading room and a φ falling time Tf. The rise time Tr is the time that the LC molecules respond to the maximum voltage Vw generated by applying the maximum voltage Vw to the pixel electrode in the absence of an electric field = the time of the electric field 'and the fall time Tf_ has experienced the maximum after the minimum voltage Vb is applied to the pixel electrode Electric 埸 τ Γ in all directions L ·. The time at which the molecule returns to its original state. "Cell gap" indicates the thickness of layer 3 in the table shown in Fig. 5 by lc, that is, the distance between the panels 100 and 2000. 98089. doc -24- 200527055 As shown in Figure 5, the measured response time is equal to i3. 95 ms, 88 88 ms, and 15 34 ms. These times are less than 16 ms, and the response time of a conventional LCD without a tilting member is 21_25 ms. In addition, the rise time T r and the response time τ t 〇 t decrease as the roll angle of the inclined member increases. Because for a moving image, it is necessary to display an image of 60 frames within one second, so the measured response time is less than 16 ms to enable dynamic image. An LCD according to another embodiment of the present invention will be described in detail with reference to FIGS. 6 and 7. FIG. 6 is a layout diagram of an iLCD according to another embodiment of the present invention, and FIG. 7 is an LCD line Vll-Vir shown in FIG. 6. A cross-sectional view taken. 6 and 7 'The LCD according to this embodiment also includes a TFT array panel 100, a common electrode panel 200, a layer 3 interposed between the panels 100 and 200, and a plurality of columnar spacers 320, and attached to One pair of polarizers 12 and 22 on the outer surface of the panel 100 and 2000. The hierarchical structures of the panels 100 and 200 according to this embodiment are almost the same as those shown in FIG. 4. Regarding the TFT array panel 100, a plurality of gate lines 121 and a plurality of storage electrode lines ι31 including a gate electrode 124 and a terminal portion 129 are formed on the substrate 110, and a gate insulating layer 140 including a protrusion 154 is formed. A plurality of semiconductor stripes 1 5 1 and a plurality of ohmic contact stripes 6 1 including a protrusion 1 63 and a plurality of area contact islands 16 5 are sequentially formed thereon. A plurality of data lines 1 71 including a source electrode 17 3 and a last portion 179, a plurality of drain electrodes 1 and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 161 and 65, and a passivation layer 180 is formed thereon. 98089 is provided at the passivation layer 18 and the gate insulating layer 14. doc -25- 200527055 A plurality of contact holes 181, 182, 183a, 183b and 185. A plurality of pixel electrodes 19, a plurality of contact assistants 81 and 82, and a plurality of bridges 83 having a plurality of slits 91-921 are formed on the passivation layer 180, and the alignment layer 11 is coated thereon. Regarding the common electrode panel 200, a light blocking member 220, a plurality of color filters 230, an overcoat 250, a common electrode 270 having a plurality of cutouts 71-72b, and an alignment layer 21 are formed on an insulating substrate 21o. . Unlike the LCD shown in FIGS. 1-4, the common electrode panel 200 includes a collection of a plurality of inclined members 335, 336a, and 336b disposed on the common electrode 270 and the overcoat 250, and the TFT array panel 100. Does not have inclined members. Like the inclined members 33 1-33 3b, the inclined members 335, 336a, and 336b are preferably made of an insulator. Each set of the tilting members 335_336b includes three tilting members 335-336b facing the pixel electrode 190. Each of the inclined members 335-33 讣 has a major edge and a minor edge such that it has a trapezoidal or humanoid planar shape; the major edges are parallel to the inclined edges of the cutouts 71-72b and opposite each other with respect to the cutouts 71-72b Placement; these minor edges are parallel to gate line 121 or data line 171. Each of the inclined members 335_33613 has a ridge and an inclined surface whose height decreases from the ridge to the major edges, and the ridge is approximately positioned on the centerline of the inclined portion of the cutout 71_72b and extends along it. The roll angle 0 of the inclined surface with respect to the surface of the substrate 21 is in a range of about M0 degrees. In addition, the semiconductor stripe Mi of the TFT array panel 100 according to this embodiment has a planar shape almost similar to the data line 171 and the drain electrode 175 and the ohmic contacts 161 and 165 below. However, the semiconductor stripes 151 are protruding 154 98089. doc -26- 200527055 includes some exposed portions that are not covered by the data line 171 and the drain electrode 175, such as a portion positioned between the source electrode 173 and the drain electrode 175. In addition, the TFT array panel 100 further includes a plurality of semiconductor islands (not shown) disposed on the metal member 178 and a plurality of ohmic contact islands (not shown) disposed thereon. The method of manufacturing a TFT array panel according to an embodiment uses a photolithography process to simultaneously form the data line 171, the drain electrode 17 5, the metal piece 17 8, and the semiconductor 151 as ohmic contacts 161 and 165 as possible. The photoresist pattern used in the photolithography process has a thickness depending on the position, and in particular, it has first and second portions having a reduced thickness. The first portions are positioned on the area of the electric wire to be occupied by the data line 17, the drain electrode 75, and the metal piece i 72, and the second portions are positioned on the channel area of the TFT. The thickness of the photoresist material is determined by several techniques, for example, providing translucent areas on the exposure mask, as well as transparent areas and light blocking opaque areas. The translucent area may have a slit pattern, a lattice pattern, a thin film having an intermediate transmittance or an intermediate thickness. When a slit pattern is used, the width of the slits or the distance between the slits is preferably smaller than the resolution of an exposure device for photolithography. Another example is the use of fusible photoresist materials. In detail, once a standard exposure mask having only transparent and opaque areas is used to form a photoresist pattern made of a soft-soluble material, it is subjected to a soft process to flow onto areas without photoresist, thereby Formation of thin sections. As a result, the manufacturing process is simplified by omitting the photolithography step. 98089. doc -27- 200527055 Many of the above features of the LCD shown in FIGS. 1-4 can be adapted to the TFT array panel shown in FIGS. 6 and 7. An LCD according to another embodiment of the present invention will be described in detail with reference to FIGS. 8 to 10. FIG. 8 is a layout diagram of a common electrode panel of an LCD according to another embodiment of the present invention, and FIG. 9 includes an LCD panel shown in FIG. 1. The layout of the LCD of the tft array panel and the common electrode panel shown in FIG. 8 is a cross-sectional view taken along line XX * of the LCD shown in FIG. 9. 8-10 'The LCD according to this embodiment also includes a TFT array panel 100, a common electrode panel 200, an LC layer 3 inserted between the panels ι00 and 2000, and a plurality of columnar spacers 320, and A pair of polarizers 12 and 22 are attached to the outer surfaces of the panels 1000 and 2000. The layered structure of the panels 100 and 200 according to this embodiment is almost the same as those shown in FIGS. 1-4. Regarding the TFT array panel 100, a plurality of gate lines 121 and a plurality of storage electrode lines 1 31 including a gate electrode 124 and a terminal portion 129 are formed on the substrate 11 and a gate insulating layer 140 including a protrusion A plurality of semiconductor stripes 151 of 154, and a plurality of ohmic contact stripes 161 including protrusions 163 and a plurality of ohmic contact islands 165 are sequentially formed thereon. A plurality of data lines 17 including a source electrode 173 and a terminal portion 179, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 161 and 165, and a passivation layer 180 is formed thereon. A plurality of contact holes 181, 182, 183a, 183b, and 185 are provided at the passivation layer 180 and the gate insulating layer 140. A plurality of pixel electrodes 190 with a plurality of cutouts 91-92b, a plurality of contact assistants 81 and 82, and a plurality of 98089. doc -28- 200527055 Several bridges 83 are formed on the passivation layer 180, and the alignment layer 11 is coated thereon. * Regarding the common electrode panel 2000, a light blocking member 220 having a plurality of openings 225, a plurality of color filters 23, an overcoat layer 25, a common electrode 270, and an alignment layer 21 are formed On an insulating substrate 21o. Unlike the LCD shown in FIGS. 1-4, the common electrode panel 200 includes a collection of a plurality of inclined members 335, 336a, and 336b disposed on the common electrode 270 and the overcoat 250, and the TFT array panel 100 Does not have inclined members. Like the inclined members 33 1-333b, the inclined members 335, 33, and 3361) are preferably made of an insulator. Each set of tilting members 335_336b includes two tilting members 335-336b facing the pixel pole 190. Each of the inclined members has a major edge and a minor edge, which have a trapezoidal or humanoid planar shape, and the major edges are parallel to the edge of the cutout and the beveled left edge of the pixel electrode 190 and face The left edge of the cutout or pixel electrode 190 is chamfered; the minor edges are parallel to the gate line pi or the data line 171. Each of the sloping members 335_33 讣 has a ridge and a sloped surface with a reduced degree of ridge from 4 ridges to major edges such as §HAI, the ridge A · is physically equidistant from and parallel to the main edges Edge. The height of the ridge is in a range of about 0.5 to 2 micrometers', and the roll angle β of the inclined surface with respect to the surface of the substrate 21 is in a range of about i] G degrees. Preferably, the set of the tilting members 335-336b occupies an area equal to or larger than one-half of the pixel electrode 190. In addition, the omission of the outer coating is arbitrary, but the common electrode 270 ¥ does not have a cutout and therefore does not have an outer coating. 98089. doc -29- 200527055 There are no cutouts at the same and private electrode panels, but the tilting member b may be sufficient to determine the tilting direction together with the cutout 91_92b of the pixel electrode 190. The omission removes the light used to form a cut at the common electrode 27o. F # / 骤 ° In addition, the omission of the cut σ prevents the accumulation of charge carriers at a specific place, and the accumulation can be moved to the polarizer. As a result, the polarizers and 2 are damaged, thereby making it possible to omit the damage to the polarizers 12 and 22. Therefore, the omission of the cutouts and the omission of the outer coating significantly reduce the cost of manufacturing the LCD. Many of the above features of the LCD shown in FIG. 14 can be adapted to the TFT array panel shown in the figure. The response time was measured for a tilting member provided on a common electrode panel 2000 and having a roll angle of about 2 degrees when the maximum and minimum voltages were 7V and IV%, respectively. , Rise and Fall and Mori are approximately 6.5 ms and approximately 3 ms, and the response time is 12 · 8 ms. This shows that the rise time is significantly reduced and almost equal to the fall time. Therefore, the asymmetry between the rise time and the fall time is removed. An LCD according to another embodiment of the present invention will be described in detail with reference to FIGS. 11 and 12. FIG. 11 is a layout diagram of an LCD according to another embodiment of the present invention, and FIG. 12 is a cross-sectional view taken along the line χπ-χιm of the LCD shown in FIG. 11. Looking at Figures 11 and 12, the CD according to this embodiment also includes a TFT array panel 100, a common electrode panel 2000, an LC layer 3 inserted between the panels 100 and 2000, and a plurality of Columnar separator 320, and 98089 attached to the panel 1⑼ and 2000. doc -30- 200527055 One pair of polarizers 12 and 22 on the outer surface. The layered structures of the panels 100 and 200 according to this embodiment are almost the same as those shown in FIGS. 1-4. Regarding the TFT array panel 100, a plurality of gate lines 121 and a plurality of storage electrode lines ι31 including a gate electrode 124 and a terminal portion 129 are formed on the substrate 110, and a gate insulating layer 140 including a protrusion 154 is formed. A plurality of semiconductor stripes 151, a plurality of ohmic contact stripes 161 including a protrusion 163, and a plurality of ohmic contact islands 165 are sequentially formed thereon. A plurality of data lines 171 including a source electrode 173 and a terminal portion 179, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 161 and 165, and a passivation layer 180 is formed thereon. A plurality of contact holes 181, 182, 183a, 183b, and 185 are provided at the passivation layer 80 and the gate insulating layer 14, and a plurality of pixel electrodes 19 and a plurality of contact assistants 81 having a plurality of cutouts 91-921 ^ are provided. And 82 and a plurality of bridges 83 are formed on the passivation layer 180. A plurality of inclined members 33 1-333b are formed on the pixel electrode 190, and the alignment layer 11 is coated thereon. Regarding the common electrode panel 200, a light blocking member 220, a plurality of color filters 230, an overcoat layer 25, a common electrode 270 including a plurality of slits 71_72b, and an alignment layer 21 are formed on an insulating substrate 21. on. Unlike the LCD shown in Figs. 1-4, the TFT array panel 100 includes a plurality of color filter stripes 23 disposed under the passivation layer 180, and the common electrode panel 200 does not have a color filter. The color filter stripes 23 extend in the longitudinal direction and the edges of two adjacent color filter stripes 23 are perfectly matched with each other on the data line 171, but the color filters 23 may overlap each other to block the pixel electrode 190. The light leakage between them may be separated from each other. 98089. doc -31-200527055 When the color filters 230 overlap each other, the light blocking member 220 disposed on the common electrode panel 200 may be omitted. Many of the above features of the LCD shown in FIGS. 1-4 may be adapted to the TFT array panel shown in FIGS. Η and 12. A method of manufacturing a common electrode panel including an inclined member according to an embodiment of the present invention will now be described in detail with reference to Figs. FIG. 13 is a cross-sectional view of a common electrode panel and a photomask for forming an inclined member in an intermediate step of a manufacturing method thereof according to an embodiment of the present invention, and FIG. 14 illustrates a photomask aligned with the inclined member. Slit. Referring to FIG. 13, a light blocking member 220, a plurality of color filters 23, and an overcoat layer 250 are sequentially formed on the insulating substrate 21. The light blocking member 22 is preferably made of an organic material containing black pigment or chromium or chromium oxide, and the overcoat layer 250 is preferably made of an inorganic or organic insulator. For example, the color filter 23 may be formed by sequentially coating, exposing, and developing negative photosensitive organic materials including red, green, and blue pigments. Next, ITO or IZO may be placed on the overcoat layer 250 and patterned to form a common electrode 270 having a plurality of cutouts 70. As described above with reference to Figures 8-10, the cutouts 70 may be omitted. Next, a photosensitive organic insulating layer is coated on the common electrode 270; the scripture is exposed through the photomask 400; and it is developed to form a plurality of inclined members. Light-transmitting regions and translucent regions A and b that partially transmit incident light. Referring to FIG. 14, the translucent regions A and B include a plurality of light blocking members 41o separated from each other by a plurality of slits 420 separated therebetween. The width of the slit 42 and the slit 98089. The distance between doc -32- 200527055 is preferably lower than the resolution of the exposure device used in the exposure. The light transmittance of the translucent regions A and B gradually increases from the center to the edges of the translucent regions VIII and 8. For example, in the case of translucent areas, the degree of light blocking member 41〇 is fixed at about 10-2. Within the range of 5 microns, the width of the slit 420 gradually increases from the tenth heart of the translucent area A to the two edges. In contrast, the width of the slit 42 is fixed at about 1. 0-2. Within the range of 5 micrometers, the width of the light blocking member 410 gradually decreases from the center of the translucent region B to both edges. The method described above can obtain a uniform roll angle Θ of the inclined member 330, and realize a uniform and renewable manufacturing process. Considering the transmittance of the inclined member 33 °, the thickness of the inclined member 330 preferably has a maximum value of about 15 micrometers, the roll angle of the inclined member 330 is preferably within a range of about 12-30 degrees, and the width of the inclined member 330 It depends on the width of the domains. As in 4, the inclined member 330 may have a curved surface as shown in FIG. 15, and FIG. 5 illustrates an inclined member according to another embodiment of the present invention. Referring to Fig. 15, the inclined member 330 has a roll angle /? From its center to a portion near its edge, but it has another roll angle α which is greater than 0 near its edge. The roll angle α and preferably are equal to or less than about 5 and 10 degrees, respectively. 16-20, a [CD according to another embodiment of the present invention is described in detail. FIG. 16 is a layout diagram of a TFT array panel of an LCD according to an embodiment of the present invention. FIG. 17 is a layout diagram of a common electrode panel of a CD according to an embodiment of the present invention. The layout of the LCD of the TFT array panel shown and the common electrode panel shown in FIG. 17 is shown. FIG. 19 is a cross-sectional view taken along line XIX-XIX of the LCD shown in FIG. 18, and FIG. 20 is FIG. 18 The LCDs shown in Figure XX-XX, and χχ, _χχ, are intercepted 98089. doc -33-200527055 surface map. An iLCD according to an embodiment of the present invention includes a TFT array panel 100, a common electrode panel 200 facing the TFT array panel 100, and a common electrode panel 200 inserted between the TFT array panel 100 and the common electrode panel 2⑼. Layer 3. The TFT array panel 100 will now be described in detail with reference to FIGS. 16 and 18-20. A plurality of gate lines 121 and a plurality of storage electrode lines 131 are formed on the insulating substrate 110. The gate lines 121 for transmitting the gate signals extend substantially in a lateral direction and are separated from each other. Each gate line 21 includes a plurality of gate electrodes 1, a plurality of protrusions', and an end portion 12 9 having a larger area in contact with another layer or an external device. When the gate driving circuit (not shown) is integrated on the substrate 110, the terminal portion 29 cannot be provided, so that the gate line 121 directly contacts the gate driving circuit. The per-stored electrode line 131 extends substantially in a lateral direction and includes a plurality of protrusions forming a storage electrode 135. Each of the storage electrodes 135 has a diamond shape or a rectangular shape rotated by about 45 degrees and is positioned close to the gate line 121. The storage electrode line 131 is supplied with a predetermined voltage such as a universal voltage applied to the common electrode 270 on the common electrode panel of the LCD. The gate line m and the storage electrode line 131 have a multilayer structure including two kinds of films (a lower film and an upper film) having different physical characteristics. The upper film is preferably made of a low-resistance metal including a metal containing silver, a metal containing silver, or a copper containing metal 'to reduce the signal delay or electrical signal in the idler line 121 and the storage electrode line 131. On the other hand, the lower film is preferably made of a material such as metal, chromium, group, or titanium, which has good physical, chemical, and 98089. doc -34- 200527055 and electrical contact characteristics with other materials such as Ting O or 120. A preferred exemplary combination of the lower film material and the upper film material is a molybdenum and aluminum alloy. In FIGS. 19 and 20, the lower and upper films of the gate electrode 124 are indicated by reference numerals and 124q, the lower and upper films of the end portion 129 are indicated by reference numerals 129p and 129q, and the lower and upper films of the storage electrode 135 are indicated, respectively. They are indicated by reference numerals kiss and call. The upper film 129 (1) of the end portion 129 of the closed electrode line 121 is at least partially removed to expose the lower film 12 leaves. The gate line 121 and the storage electrode line 131 may have a single layer structure or may include three or more layers In addition, the side surfaces of the gate electrode line 12 1 and the storage electrode line 13 1 are inclined with respect to the surface of the substrate 1 ^ 〇, and their roll angles are changed within a range of approximately 30 · 80 degrees. Preferably, silicon nitride (SiNx) The gate insulating layer 14 is formed on the gate line 12 1 and the storage electrode line 1 3 丨. It is preferably a plurality of half V made of hydrogenated amorphous silicon (simplified as "a_Si") or polycrystalline silicon. A body stripe 1 5 1 is formed on the gate insulating layer 1 * 〇. Each semiconductor stripe 151 extends in the longitudinal direction while being periodically bent. Each semiconductor stripe 151 has a plurality of protrusions that branch toward the gate electrode 124. 154. The ohmic contact stripes 161 and ohmic contact islands 165 and 165 of "hydrogenated a_si" doped with silicide or a large amount of 7n-type impurities are preferably formed on the semiconductor stripes 151. Each ohmic contact stripes 161 has a plurality of protrusions 163 , And protruding 163 and ohmic contact island 16 5 are positioned in pairs on the protrusions 1 54 of the semiconductor stripe 15 丨 The sides of the semiconductor stripe 1 5 1 and the ohmic contacts 1 6 1 and 1 65 are inclined with respect to the surface of the substrate, and their roll angle is preferably about 30 -80 degree range 98089. doc -35- 200527055. A plurality of data lines 171 and a plurality of drain electrodes 175 separated from each other are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140. A data line 171 for transmitting a data voltage generally extends in a longitudinal direction and intersects the gate line 121 and the storage electrode line 131. Each data line 1 71 has an end portion 179 of a larger area that is in contact with another layer or an external device, and it includes a plurality of pairs of inclined portions and a plurality of longitudinal portions such that they are periodically bent. A pair of inclined portions are connected to each other to form a herringbone shape, and opposite ends of the pair of inclined portions are connected to respective longitudinal portions. The inclined portion of the data line 171 makes an angle of about 45 degrees with the gate line 121, and the longitudinal portion crosses the gate electrode 124. The length of a pair of inclined portions is about one to nine times the length of a longitudinal portion, that is, it occupies about 50-90 percent of the total length of the pair of inclined portions and the longitudinal portion. A pair of inclined portions may be replaced by three or more inclined portions so that a portion of the gate line 171 between two adjacent longitudinal portions is bent twice or more. Each of the electrodes 175 includes a rectangular or diamond-shaped enlarged portion overlapping the storage electrode 135. The edge of the enlarged portion of the non-electrode 175 is substantially parallel to the edge of the storage electrode 135. Each of the longitudinal portions of the bead line m includes a plurality of protrusions so that the protruded longitudinal portions are formed to partially surround the source electrode 173 disposed at the end portion of the opposing line electrode 175 of the enlarged portion. —Empty electrode ⑶, —Source electrode 173, and each set of electrode 175 connected to the same semiconductor stripe i5i bis = 154 forms a channel with a channel—the channel formed between the electrode 173 and the semiconductor projection ㈣. -Behr wire m and no electrode 175 also include preferably made by turning, turning alloy, wire, 98089. doc -36- 200527055 lower film made of tantalum or titanium 171p & 175p, and upper film positioned thereon and preferably made of aluminum-containing metal, silver-containing metal, or copper-containing metal ^ · 171q and 175q . In Figs. 4 and 5, the lower and upper films of the source electrode 173 are indicated by reference numerals 173p and 173q, respectively, and the lower and upper films of the end portion 179 of the data line m are indicated by 179p & 179q, respectively. The end portions 179 of the data line 171 and the upper films 179q and 175q of the drain electrode 175 are at least partially removed to expose the lower films i79p and 175p. Like the gate line 12 1 and the storage electrode line 1 3 1-, the data line 171 and the non-electrode 175 have inclined sides, and their roll angles vary within a range of about 30-80 degrees. The ohmic contacts 161 and 165 are only inserted between the lower semiconductor stripe 151 and the upper data line 171 and the upper drain electrode 75 above it, and the contact resistance therebetween is reduced. The purification layer 180 is formed on the exposed portions of the data lines 171 and the drain electrodes 175 and the semiconductor stripes 151 that do not cover the data lines 171 and the drain electrodes 175. The passivation layer 180 is preferably made of a photosensitive organic material having good flatness characteristics, and low dielectrics such as a-Si: c: 〇 and tSi: 0: F formed by electro-chemical enhanced chemical gas deposition (PECVD). Made of insulating materials, or inorganic materials such as silicon nitride and silicon dioxide. In order to prevent the channel portion of the semiconductor stripe 15 1 from directly contacting the organic material, the passivation layer 1 80 may have a double-layered structure including a lower inorganic film and an upper organic film. The purification layer 180 has a plurality of contact holes 182 and 185 exposing a terminal portion 179 of the data line 171 and a drain electrode 175, respectively. The passivation layer 180 and the gate insulation.The layer 140 has a plurality of contact holes 98_ which expose the end portion of the gate line 21 and 29. doc -37- 200527055 181. The exposed portions of the lower films 129 ?, 179p, and 175p described above are exposed through the contact holes 1 81, 182, and 185, respectively. The contact holes 181, 182, and 185 may have various shapes such as a polygon or a circle. The area of each contact hole 181 or 182 is preferably equal to or larger than 0-5 mmxi5 μm, and not larger than 2 mmx60 / xm. The sidewalls of the contact holes 181, 182, and 185 are inclined at an angle of about 30-85 degrees or have stepped wheels. A plurality of pixel electrodes 190 and a plurality of contact assistants 81 and 82, which are preferably made of a transparent conductive material such as ITO or IZO, are formed on the passivation layer 18o. The pixel electrode 190 may be made of an opaque reflective material such as silver or aluminum for a reflective LCD. Each pixel electrode 190 is positioned substantially in an area surrounded by the data line 17 and the gate line 121, and thus it also forms a herringbone shape. The pixel electrode 1 covers a large portion of the storage electrode line 131 including the storage electrode 135 and the enlarged electrode 175, and has a beveled edge that is substantially parallel to the edge of the storage electrode 135 close to the beveled edge. By providing a protrusion (that is, a storage electrode) 135 at the storage electrode line 131, extending the drain electrode connected to the pixel electrode 190, and providing a storage electrode 135 overlapping the storage electrode line 131 at the drain electrode 175, The enlarged portion reduces the distance between the terminals and increases the overlap area to increase the capacitance (that is, the storage capacitance) of the storage capacitor constructed by overlapping the pixel electrode 190 and the storage electrode line π 1. The pixel electrode 190 overlaps the data line 171 and the gate line 121 to increase the aperture ratio. The contact assistants 8 1 and 82 are connected to the exposed end portion of the gate line 121 and the exposed end portion of the data line 171 via the contact holes 1 § 1 and 1 82, respectively. 98089. doc • 38- 200527055 The contact aids 81 and 82 protect the exposed portions 129 and 179 and supplement the adhesion between the exposed portions 129 and 179 and external devices. The contact assistants 81 and 82 are connected to an external device via an anisotropic conductive film (ACF) (not shown) or the like. If the contact assistant 81 is integrated on the TFT array panel, it can serve as a metal layer connecting the gate line 121 and the gate driving circuit. Similarly, if the contact assistant 82 is integrated on the TFT array panel 100, it can serve as a metal layer connecting the data line 170 and the data driving circuit. A plurality of inclined members 34, preferably made of an insulator, are formed on the pixel electrode 190 and the passivation layer 180. Each of the inclined members 341 has a major edge and a minor edge so that it has a herringbone planar shape; the major edges are parallel to the edge of the pixel electrode 190 and are disposed to divide the pixel electrode 190 into the left half equally. And the right half of the imaginary center line; these minor edges are parallel to the gate line 12 1. Each of the inclined members 341 has a ridge disposed on and extending along the data line 171, and an inclined surface whose height decreases from the ridge to the major edges. Since the inclined member 341 is located in the center of the data line 71 and the light blocking member 22o, it is possible to reduce the reduction in the light transmittance that can be generated by the inclined member 341. In addition, the inclined member 341 reduces the electric field generated by the data line 171 and can distort the orientation of the lc molecule 0 to generate a light spot. Therefore, the alignment range between the data line 171 and the pixel electrode 190 can be increased. After removal ', a vertical alignment layer may be formed on the inclined member 341. The common electrode panel 200 will be described below with reference to FIGS. 17-19. A light blocking member 22o called a black matrix is formed on a substrate 210, such as transparent glass, ', bar,' ', and it includes a complex 98089 that slopes toward the data line 171. doc -39 · 200527055 Several oblique portions and a plurality of right-angled triangular portions facing the longitudinal portion of the TFT and the data line 1 71 make the light blocking member 220 prevent light leakage between the pixel electrodes 190 and define the pixel facing Open area of electrode 19. Each triangular portion of the light blocking member 220 has a hypotenuse parallel to the chamfered edge of the pixel electrode 190. A plurality of color filters 230 are formed on the substrate 210 and the light blocking member 22 'and are disposed substantially in an open area defined by the light blocking member 22o. The color filters 230 arranged adjacent to the two data lines 171 and arranged in the longitudinal direction may be connected to each other to form stripes. Each color filter 23 may represent one of three primary colors such as red, green, and blue colors. An outer coating layer 25, which is preferably made of an organic material, is formed on the color filter 230 and the light blocking member 22o. The overcoat layer 25 protects the color filter 23 and has a flat top surface. A common electrode 270, preferably made of a transparent conductive material such as ITO and IZ0, is formed on the overcoat 250. The common electrode 270 is supplied with a common voltage and the common electrode 270 has a plurality of herringbone-shaped cutouts 79. Each cutout 79 includes a pair of inclined portions connected to each other, a lateral portion connected to one of the inclined portions, and a longitudinal portion connected to the other of the inclined portions. The inclined portion of the cutout 79 extends substantially parallel to the inclined portion of the data line 171 and faces the pixel electrode 19o, so that it can bisect the pixel electrode 19o into a left half and a right half. The horizontal and vertical portions of the cutout 79 are aligned with the branch and vertical edges of the pixel electrode 190, respectively, and they form an obtuse angle with the inclined portion of the cutout 79. The slits 79 are provided to control the tilt direction of the LC molecules 310 in the LC layer 3 and the slits 79 preferably have a width ranging between about 9-12 microns. 98089. doc -40- 200527055 The cutout 79 may be replaced by a protrusion formed on or under the common electrode 27, preferably made of an organic material, and preferably having a width ranging from about 5 to 10 microns. An alignment layer 21, which may be a vertical type, is coated on the common electrode 270. A pair of polarizers 12 and 22 are provided on the outer surfaces of the panels 100 and 2000 so that their transmission axes intersect and one of the transmission axes (for example, provided on the TFT array panel 100). The transmission axis of the polarizer 12) is parallel to the gate line 121 °, and the polarizer 12 can be omitted for a reflective LCD. The LCD further includes retardation films 13 and 23 interposed between the panel 100 and the polarizer 12 and between the panel 200 and the polarizer 22. The retardation films 13 and 23 have birefringence and compensate the retardation of the Lc layer 3 in a reverse manner. The retardation films 3 and 23 may include uniaxial or biaxial optical films, and in detail, they may include negative uniaxial optical films. 'The LCD may further include a backlight unit that provides light to the polarizers 12 and 22, the panels 100 and 200, and the acetylene layer 3. The alignment layers 11 and 21 may be homogeneous alignment layers. The LC layer 3 has negative dielectric anisotropy and is aligned ^ (:: molecule 3 10 in layer 3 makes its long axis perpendicular to the surface of the panel in the absence of an electric field. Therefore, incident light cannot pass through the intersecting Polarization systems 2 and 22. Once a common voltage is applied to the common electrode 270 and a pixel pressure is applied to the pixel electrode 190, a first electric field that is substantially orthogonal to the surface of the panel is generated. The LC molecules 3 1〇 tend to Respond to the electric field and change its orientation so that its long axis is orthogonal; the t direction is the same day t, the slit 79 of the common electrode 270 and the edge of the pixel electrode 190 distort the first electric field to have a tilt direction that determines the LC molecule 3 10 98089. doc -41-200527055 horizontal composition. The horizontal component of the first electric field is orthogonal to the edge of the cutout 79 and the edge of the pixel electrode 190. The horizontal component of the first electric field is antiparallel at the opposite edge of the cut. Therefore, four sub-regions having different oblique directions divided by the edge of the pixel electrode 190, the slit 79 of the halved pixel electrode 190, and the imaginary lateral center line of the intersection of the inclined portions of the common slit 79 are formed in the Lc layer 3. In the pixel region, the four sub-regions are positioned on the pixel electrode i 90. Each sub-region has two main edges defined by the cutout 79 and the inclined edges of the pixel electrode 190, respectively, and these edges are preferably separated by a distance from about 10 microns to about 30 microns. If the planar area of the pixel area is less than about 100 > < 300 square microns, the number of sub-regions in the pixel region is preferably four, and if the planar area of the pixel region is not less than about 100x300 square microns, the number is preferably four or eight. The number of sub-regions may be changed by changing the number of cuts 79 of the common electrode 270, by providing cuts at the pixel private electrode 190, or by changing the number of bending points of the edges of the pixel electrode 19. The sub-regions are classified into a plurality (preferably four) domains based on the tilt direction. At the same time, the direction of the second electric field due to the voltage difference between the pixel electrodes 190 is exactly the edge of the cutout 79. Therefore, the field direction of the second electric field coincides with the field direction of the horizontal component of the electric%. Therefore, the second electric field between the pixel electrodes i enhances the determination of the tilt direction of the LC molecules 310. Because the LCD performs inversions such as dot inversion, line inversion, etc., adjacent pixel electrodes are supplied with data voltages having opposite polarities with respect to the common voltage, and therefore, the first pixel voltage between adjacent pixel electrodes 19o is almost always generated. Two electric fields to enhance the stability of the crystal domain. 98089.doc -42- 200527055 A method of manufacturing the TFT array panel shown in FIGS. 16-20 according to an embodiment of the present invention will now be described in detail with reference to FIGS. 21A, 21B, 22A and 22B, and FIGS. 16-20. 21A and 21B are the TFT array panels shown in FIGS. 16 and 18-20 along the lines XIX-XIX, and lines XX-XX, and XX, respectively, in the intermediate steps of a manufacturing method according to an embodiment of the present invention, -XX "cross-sectional view, and FIGS. 22A and 22B are the TFT array panels shown in FIGS. 16 and 18-20 along the lines of the manufacturing method following the steps shown in FIGS. 21A and 21B, respectively. -XIX 'and cross-sections taken along lines XX-XX' and χχ'_χχ ". 16, 21A and 21B, a lower conductive film preferably made of chromium, molybdenum, or a molybdenum alloy and an upper conductive film preferably made of an aluminum-containing metal or a silver-containing metal are sequentially sputtered on an insulating substrate 11 〇, and sequentially wet or dry it to form a plurality of gate lines 12 1 including a gate electrode 12 4 and a terminal portion 12 9, and a plurality of healthy electrode lines 131 including a storage electrode 13 5 . In FIGS. 21A and 21B, the lower and upper films of the gate electrode 124 are indicated by reference numerals 124p and 124q, the lower and upper films of the end portion 129 are indicated by reference numerals 129p and 129q, and the lower and upper films of the storage electrode U5 are respectively. Indicated by reference numbers 135? And 135q, respectively. A gate insulating layer 140 having a thickness of about 1,500-5,000 A, an inner a-Si layer having a thickness of about 500-2,000 people, and an outer a-Si layer having a thickness of about 300-600 A are sequentially deposited. After that, the external layer and the internal a-Si layer are light-etched to form a plurality of external semiconductor stripes and a plurality of internal semiconductor stripes 151 including protrusions I "on the gate insulating layer 14. Next, The two conductive films including the lower conductive film and the upper conductive film and having a thickness of 98089.doc -43-200527055 1'500 3, GGG A are sequentially low, and patterned to include the source electrode 173 and the end portion m data lines ⑺, and the last several drain electrodes 175. The lower conductive film is preferably made of chromium, surface, or pin alloy, and the upper conductive film is preferably made of metal or silver-containing metal. In FIG. 21A and the rule, the lower and upper films of the data line ^ are indicated by the reference number mpM71q, and the lower and upper films of the source electrode M are indicated by the reference number ⑺!) And 173q, respectively, and the lower and upper portions of the drain electrode 175 The film is indicated by reference numerals 17 祚 and 17 耻, respectively. The lower and upper films of the end portion 179 of the data line 171 are indicated by reference numbers 179p and 179q, respectively. Thereafter, the portions of the external semiconductor stripes that are not covered with the data line 7 and the drain electrode 75 are removed. To complete a plurality of ohmic contact stripes 161 and a plurality of ohmic contact islands 165 including a plurality of protrusions 163 and to expose a portion of the inner semiconductor stripes 15 1. Preferably, an oxygen plasma treatment is subsequently performed to stabilize the semiconductor stripes 15 The exposed surface of 1. Referring to Figs. 16, 22 A and 22B, a passivation layer 180 made of a photosensitive organic insulator is applied, and passes through a plurality of opaque areas 803, a plurality of transmission areas 802, and is disposed in the transmission areas. The mask 800 of the plurality of slit regions 801 around 802 is exposed. Therefore, the part of the passivation layer 180 facing the transmission region 802 absorbs the entire energy of light, and the part of the passivation layer 1 80 facing the slit region 80 1 is partially Then, the passivation layer 1 80 is developed to form a plurality of contact holes 18 2 and 18 5 ′ in which portions of the end portion 179 and the drain electrode 175 of the data line 171 are exposed, respectively. A plurality of portions of the gate insulating layer 140 disposed on the end portion 129 of the gate line 121 are exposed to the upper portion of the contact hole 181, 89089.doc -44- 200527055, because the passivation layer ι8 that faces the transmission area 802 The entire thickness of the part 〇 is removed, while the part facing the slit area 丨 has a reduced thickness. Therefore, the sidewalls of the contact holes 181, 182 and 185 have a stepped profile. The passivation layer 180 in FIGS. 22 A and 22B The hatched part is the part to be removed, and the transmissive area 802 and the opaque area 801 are interchangeable when the passivation layer 18 is a negative photoresist. The exposed portion of the gate insulation layer 14 is removed to expose the gate line! After the portion below the end portion 129 of 21, remove the drain electrode 175, the end portion 179 of the data line 171, and the exposed portions of the upper conductive films H5q, 179q, and 129q of the end portion 129 of the gate line 121 to expose the drain The electrodes 175, the end portions 179 of the data lines 171, and the portions below the conductive films 175p, 179p, and 129p under the end portions 129 of the gate lines m. Next, as shown in FIGS. 16 and 18-20, the passivation layer 18 and the ends of the drain electrode 175 and the data line 171 are sputtered and photo-etched to an IZ0 or IT0 layer having a thickness of about 400-500 A. The plurality of pixel electrodes 190 and the plurality of contact assistants 81 and 82 are formed on the portion 179 and the conductive film 1751) under the terminal portion 129 of the gate line ι21, and the exposed portion of 129ρ & 179ρ. Finally, a positive photosensitive organic insulating layer is coated on the common electrode 27; subjected to exposure through a mask (not shown) having a light transmitting region and a translucent region; and developing it to form a plurality of tilts Component 341. At this time, the photomask may have a light blocking area facing an opaque member such as the TFT, the gate line 121 or the data line 171, so that a plurality of columnar spacers (shown in FIG. 4) are formed on the opaque member. An LCD according to another embodiment of the present invention will be described in detail with reference to FIGS. 23_25. 98089.doc -45- 200527055 FIG. 23 is a layout diagram of a CD according to another embodiment of the present invention, and FIGS. 24 and 25 are LCDs shown in FIG. 23 along lines XXIV-XXIV, and XXV-XXV ', respectively. A cross-sectional view taken. 23-25, the LCD according to this embodiment also includes a TFT array panel 100, a common electrode panel 2000, an LC layer 3 interposed between the panel and 2000, and a plurality of columnar separators 32 〇, and a pair of polarizers 12 and 22 and a pair of retardation films 13 and 23 attached to the outer surfaces of the panels 100 and 2000. The hierarchical structures of the panels 100 and 200 according to this embodiment are almost the same as those shown in Figs. 16-20. Regarding the TFT array panel 100, a plurality of gate lines 121 and a plurality of storage electrode lines ι31 including a gate electrode 124 and a terminal portion 129 are formed on a substrate u0, and a gate insulating layer 140 including a plurality of protrusions 154 A plurality of semiconductor stripes 151, and a plurality of ohmic contact stripes 61 and a plurality of ohmic contact islands 165 including protrusions 163 are sequentially formed thereon. A plurality of data lines 1 71 and a plurality of drain electrodes 1 75 including the source electrode 173 and the unknown portion 1 79 are formed on the ohmic contacts 161 and 165, and a passivation layer 180 is formed thereon. A plurality of contact holes 18b, 182, and 185 are provided at the passivation layer 180 and the gate insulating layer 140, and a plurality of pixel electrodes 180 and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180. A plurality of inclined members 341 are formed on the pixel electrode 190 and the passivation layer 180, and an alignment layer is coated thereon. Regarding the common electrode panel 200, a light blocking member 220, a plurality of color filters 230, an overcoat layer 250, a common electrode 270 having a plurality of cutouts, and an alignment layer 21 are formed on an insulating substrate 21o.

不同於如圖16-20中所展示之LCD,根據此實施例之TFT 98089.doc -46- 200527055 陣列面板100之半導體條紋151具有幾乎與資料線171及汲 電極175以及下方之歐姆接觸161及165 —樣之平面形狀。然 而,半導體條紋151之凸出154包括諸如定位於源電極173 與汲電極17 5之間之部分的未覆蓋以資料線171及汲電極 175之一些曝露之部分。 圖16-20中所展示之LCD的上述特徵中的許多可適於圖 23-25中所展示之TFT陣列面板。 參看圖16-29詳細描述根據本發明之另一實施例的LCD。 圖26為根據本發明之另一實施例之LCD的共同電極面板 之布局圖,圖27為包括圖16中所展示之TFT陣列面板及圖26 中展示之共同電極面板之LCD的布局圖,而圖28及29為圖 27中所展示之LCD分別沿線XXIV-XXIV,及XXV-XXV,所截 得之截面圖。 參看圖26-29,根據此實施例之LCD亦包括··一 TFT陣列 面板100、一共同電極面板200、插入面板1〇〇與2〇〇之間的 LC層3及複數個柱狀分隔片32〇,及附著在面板1〇〇及2〇〇之 外部表面上的一對偏光器12及22及一對延遲薄膜13及23。 根據此實施例之面板1 〇〇及200之分層結構幾乎與圖 16-20中所展示之彼等結構一樣。 關於TFT陣列面板1〇〇,包括閘電極124及末端部分129的 複數個閘極線121及複數個儲存電極線1 3 1形成於基板11 〇 上’且閘極絕緣層140、包括凸出154之複數個半導體條紋 1 5 1,及包括凸出163之複數個歐姆接觸條紋161及複數個歐 姆接觸島狀物165順序地形成於其上。包括源電極173及末 98089.doc -47- 200527055 端部分179的複數個資料線171及複數個汲電極175形成於 歐姆接觸161及165上,且鈍化層180形成於其上。在鈍化層 180及閘極絕緣層140處提供複數個接觸孔18卜182及185。 複數個像素電極1 90及複數個接觸助件8 1及82形成於鈍化 層180上,且一對準層11塗覆於其上。 關於共同電極面板200,一光阻塞構件220、複數個彩色 慮光片230、一共同電極270,及一對準層21形成於一絕緣 基板2 1 0上。 不同於如16-20中所展示之LCD,共同電極面板200包括 t置於共同電極270上的複數個傾斜構件345,而TFT陣列面 板100不具有傾斜構件且共同電極面板2〇〇不具有切口。如 同傾斜構件341—般,傾斜構件345較佳由絕緣體製成。傾 斜構件341之每一者具有主要邊緣及次要邊緣,使得其具有 人字形之平面形狀;該等主要邊緣平行於資料線171並安置 於資料線^丨上;該等次要邊緣平行於閘極線。傾斜構件341 之每一者具有一近似地安置於將像素電極19〇二等分成左 半部及右半部之假想中心線上並沿其延伸之突起隆脊 346,及高度自隆脊346至該等主要邊緣減少之傾斜表面。 應注意,在諸圖中,傾斜構件345之主要邊緣中的大多數部 分與光阻塞構件220—致。 突起隆脊346替代如圖17-19中所展示之切口乃 用於決定LC分子3 10之傾斜方 346較佳地具有約5-10微米之 的傾斜表面之側傾角0在約〇. 且用作 向的傾斜方向決定構件。隆脊 寬度。相對於基板210之表面 5_20度之範圍内,且面板100 98089.doc 200527055 與200之間的單元間隙(意即,LC層3之厚度)自約Μ微米至 約2.0微米變化。 另外’共同電極270不具有外塗層。 圖16-20中所展示之LCD的上述特徵中的許多可適於圖 26-29中所展示之TFT陣列面板。 參看圖30詳細描述製造圖26·29中所展示之共同電極面 板的方法。 圖30為圖26-29中所展示之共同電極面板及一用於在根 據本發明之一實施例之其製造方法的中間步驟中形成傾斜 構件之光罩的截面圖。 參看圖30,一較佳地由一鉻薄膜及一氧化鉻薄膜製成之 光阻塞構件220、複數個彩色濾光片230,及一共同電極27〇 順序地形成於一絕緣基板21 〇上。 緊接著’將厚感光性有機絕緣層塗覆於共同電極27〇上, 經由光罩500使其經受曝光且將其顯影,以形成包括突起隆 脊線346之複數個傾斜構件345。光罩500包括面向傾斜構件 345之隆脊線346的光阻塞區域502、光透射區域503,及具 有複數個狹縫之半透明區域501。狹縫之寬度自光阻塞區域 502至光透射區域5〇3增加。然而,狹縫之間的距離可自光 阻塞區域502至光透射區域5〇3減少。 蒼看圖3 1 -34詳細描述根據本發明之另一實施例的[CD。 圖3 1為根據本發明之另一實施例之lcd的TFT陣列面板 之布局圖,圖32為根據本發明之一實施例之LCD的共同電 極面板之布局圖,圖33為包括圖31中所展示之TFT陣列面板 98089.doc -49- 200527055 及圖32中所展示之共同電極面板的lcd之布局圖,圖34為 圖33中所展示之LCD沿線χχχιν-χχχιν,所截得之截面圖。 參看圖31-34,根據此實施例之LCD亦包括:一 TFT陣列 面板1〇〇、一共同電極面板200、插入面板1〇〇與2〇〇之間的 LC層3及複數個柱狀分隔片32〇,及附著在面板1〇〇及2〇〇之 外部表面上的一對偏光器12及22及一對延遲薄膜η及23。 根據此實施例之面板1〇〇及2〇〇之分層結構幾乎與圖1_4 中所展示之彼等結構一樣。 關於TFT陣列面板1〇〇,包括閘電極124及末端部分129的 複數個閘極線121及複數個儲存電極線ι31形成於基板11〇 上’且閘極絕緣層140、包括凸出154之複數個半導體條紋 151,及包括凸出163之複數個歐姆接觸條紋ι61及複數個歐 姆接觸島狀物165順序地形成於其上。包括源電極173及末 端部分179之複數個資料線171、複數個汲電極1 75,及複數 個經隔離之金屬件178形成於歐姆接觸161及165上,且鈍化 層180形成於其上。在鈍化層ι8〇及閘極絕緣層14〇處提供複 數個接觸孔181、182及185。複數個像素電極19〇、複數個 接觸助件81及82,及複數個跨橋線83形成於鈍化層18〇上, 且一對準層11塗覆於其上。 關於共同電極面板200,一光阻塞構件220、複數個彩色 渡光片230、一共同電極270及一對準層21形成於一絕緣基 板210上。 不同於圖1-4中所展示之LCD,共同電極面板200之彩色 濾光片230具有週期性傾斜之表面,而TFT陣列面板1〇〇不具 98089.doc -50- 200527055 有傾斜構件。 另外,圖31、33及34中所展示之TFT陣列面板1〇〇中的每 一像素電極190具有包括一中心切口 93、一對下部切口 94& 及95a及一對上部切口 941)及951)之複數個切口 93_95b,其將 像素電極190分割成複數個子部分。下部及上部切口 94a-95b分別安置於像素電極19〇之下半部及上半部,且中 心切口 93定位於下部切口 94a及95a與上部切口 94b及95b之 間。切口 93-95b大體上具有關於將像素電極ι9〇二等分成下 半部及上半部之假想橫向線之反對稱性。 下部及上部切口 94a_95b與閘極線121成約45度的角,且 大體上彼此平行而延伸之上部切口 94b及95b大體上正交於 下部切口 94a及95a而延伸,該等下部切口 94a及95a亦大體 上彼此平行而延伸。 切口 95a及95b近似地自像素電極190之左縱向邊緣近似 地延伸至像素電極190之橫向邊緣。切口 94a及94b近似地自 像素電極190之左邊緣近似地延伸至像素電極1 90之右縱向 邊緣。 中心切口 93包括近似地自像素電極190之左邊緣沿假想 橫向線延伸之橫向部分,及自該橫向部分延伸至像素電極 190之右邊緣並大體上分別平行於下部切口 94a及95a以及 上部切口 94b及95b而延伸之一對傾斜部分。 因此,藉由下部切口 94a及95a及中心切口 93將像素電極 1 90之下半部分割成四個下部子部分,且亦藉由上部切口 94b及95b及中心切口 93將像素電極190之上半部分割成四 98089.doc 200527055 個上π子部分。子部分之數目及切口之數目視以下設計因 素而疋而變化·諸如像素尺寸、像素電極1之橫向邊緣與 縱向邊緣之比率、LC層3之類型及特徵等。 共同琶極270具有複數個切口 73-75b之集合。 切口 73-75b之集合面向像素電極19〇,且包括一對中心切 73及74以及下部與上部切口對75&及75b與及。切 口 73-75b之每一者安置於像素電極19〇之相鄰切口 93·9讣之 間或切口 95a或95b與像素電極19〇之拐角之間。另外,切口 73-75b之每一者具有平行於像素電極19〇之下部切口 $物及 95a或上部切口 94b&95b而延伸之至少一傾斜部分。切口 73-75b具有大體上關於該假想橫向線之反對稱性。 刀76&及76b之每一者具有近似地自像素電極19〇之左 邊緣近似地延伸至像素電極丨9〇之下部或上部邊緣之一傾 斜部分,及自該傾斜部分之各別末端沿像素電極19〇之邊緣 延伸、重疊像素電極190之邊緣、並與該傾斜部分成鈍角之 橫向及縱向部分。 切口 75a及75b之每一者具有一傾斜部分' _連接至該傾 斜部分之一末端的縱向部分及一連接至該傾斜部分之另一 末端的擴大部分。傾斜部分近似地自像素電極19〇之左邊緣 近似地延伸至像素電極19〇之右下或右上角。縱向部分自傾 斜部分沿像素電極19〇之左邊緣延伸、重疊像素電極19〇之 左邊緣、並與傾斜部分成鈍角。擴大部分覆蓋像素電極19〇 之各自的拐角。 切口 74具有近似地自像素電極19〇之左邊緣的中心延伸 98089.doc -52- 200527055 至像素電極190之右邊緣之一對傾斜部分;自該等傾斜部分 之父匯點延伸至左邊之一橫向部分,及自各別傾斜部分沿 像素電極190之右邊緣延伸、重疊像素電極190之右邊緣、 並與各別傾斜部分成鈍角之一對縱向部分。切口 73具有沿 像素電極190之橫向中心線延伸之一橫向部分;自該橫向部 分近似地延伸至像素電極190之右邊緣並與該橫向部分成 純角之一對傾斜部分;自各自的傾斜部分沿像素電極19〇 之右邊緣延伸、重疊像素電極19〇之右邊緣、並與各別傾斜 部分成純角之一對縱向部分。 切口 73-75b之數目可視設計因素而定變化,且光阻塞構 件220亦可重疊切口 73-75b以阻塞通過切口乃巧讣之光學漏 損。 傾斜表面較佳具有在約u度範圍内變化的側傾角。傾斜 表面在切口 73-76b處具有最大高度,且在面向切口 93_95b 之地方具有最小高度。 因為共同電極270與像素電極19〇之間的距離可變化,所 以寻位線及其間之電場亦可視該距離而定而變化。在距 離小的地方電場變強,使得LC分子310顯示出快速回應日± 間。 〜寸 如展示圖31-33中所示之LCD的其它例示性截面圖之圖 37-38中所展示的,圖31·34中所展示之lcd的截面結構可變 化。 圖37展示彩色濾光片23〇之表面成鋸齒狀,且因此共同電 極270及對準層21亦成鋸齒狀。鋸齒77之每一者具有一具有 98089.doc -53 - 200527055 約1 - 5度之側傾角的傾斜表面及一垂直表面。傾斜方向週期 性地反向以形成複數個凹面及凸面,且該等凹面面向切口 93-95b 〇 LCD可包括一安置於具有平坦表面之彩色濾光片23〇與 共同電極270之間的具有鋸齒狀表面之外塗層250。 圖38展示鈍化層180之表面以及彩色濾光片23〇週期性地 傾斜,使得其凹面與其凸面交替排列。 將參看圖35 A-35C詳細描述根據一實施例之圖3丨_34中所 展示的TFT陣列面板之製造方法。 圖35A-35C為在根據本發明之一實施例之其製造方法的 中間步驟中圖31-34中所展示之共同電極面板的截面圖。 參看圖35A,較佳地由包含黑色顏料之感光性有機絕緣體 製成之光阻塞構件220形成於一絕緣基板21〇上。 參看圖35B,塗覆包含紅色、綠色或藍色顏料之感光性有 機薄膜,且對準光罩600與基板210。光罩6〇〇包括一透明基 板610,及彼此隔開預定距離以形成狹縫之光阻塞構件 620。光阻塞構件620之寬度遠離參考點τ而減小,或^阻塞 構件620之間的距離遠離參考點τ而增大。圖35β中所展示之 陰影部分指示待移除之部分。 接著經由光罩600將感光性薄膜曝光並顯影,以形成如圖 3 5 C中所展示之複數個彩色濾光片2 3 〇。 ° ,參看圖34,具有複數個切⑼篇之共同電極⑽形成於 彩色濾光片230上。共同電極27〇可不具有切口。 圖1-4中所展示之LCD的上述特徵中 吁倣T的泎多可適用於圖 98089.doc -54- 200527055 31-35C中所展示之TFT陣列面板。 將參看圖36A-36D詳細描述根據一實施例之TFT陣列面 板的製造方法。 圖36A-36D為在根據本發明之一實施例之其製造方法的 中間步驟中之共同電極面板的截面圖。 參看圖36A,較佳地由包含黑色顏料之感光性有機絕緣體 製成之光阻塞構件220形成於一絕緣基板210上。 參看圖36B,複數個彩色濾光片230形成於基板210及光阻 基構件2 2 0上。 參看圖36C,塗覆感光性有機薄膜,且對準包括一透明基 板710及光阻塞構件720之光罩7〇0與如圖35B中所展示之基 板一樣之基板210。圖3 6C中所展示之陰影部分指示待移除 之部分。 接著,經由光罩700將感光性薄膜曝光並顯影,以形成具 有如圖36D中所展示之週期性傾斜的表面之一外塗層25〇。 最後,共同電極(未圖示)形成於外塗層25〇上。Unlike the LCD shown in FIGS. 16-20, the semiconductor stripe 151 of the TFT 98089.doc -46- 200527055 of the array panel 100 according to this embodiment has almost ohmic contact 161 and the data line 171 and the drain electrode 175 and below 165 —like plane shape. However, the protrusions 154 of the semiconductor stripe 151 include exposed portions such as a portion positioned between the source electrode 173 and the drain electrode 175, which are not covered with the data line 171 and the drain electrode 175. Many of the above features of the LCD shown in FIGS. 16-20 can be adapted to the TFT array panel shown in FIGS. 23-25. An LCD according to another embodiment of the present invention will be described in detail with reference to FIGS. 16-29. 26 is a layout diagram of a common electrode panel of an LCD according to another embodiment of the present invention, FIG. 27 is a layout diagram of an LCD including a TFT array panel shown in FIG. 16 and a common electrode panel shown in FIG. 26, and 28 and 29 are sectional views of the LCD shown in FIG. 27 taken along lines XXIV-XXIV and XXV-XXV, respectively. 26-29, the LCD according to this embodiment also includes a TFT array panel 100, a common electrode panel 200, an LC layer 3 inserted between the panels 100 and 2000, and a plurality of columnar separators 32 °, and a pair of polarizers 12 and 22 and a pair of retardation films 13 and 23 attached to the outer surfaces of the panels 100 and 2000. The layered structures of the panels 100 and 200 according to this embodiment are almost the same as those shown in Figs. 16-20. Regarding the TFT array panel 100, a plurality of gate lines 121 and a plurality of storage electrode lines 1 31 including a gate electrode 124 and a terminal portion 129 are formed on the substrate 11 ′, and the gate insulating layer 140 includes a protrusion 154 A plurality of semiconductor stripes 1 5 1 and a plurality of ohmic contact stripes 161 and a plurality of ohmic contact islands 165 including protrusions 163 are sequentially formed thereon. A plurality of data lines 171 and a plurality of drain electrodes 175 including a source electrode 173 and an end portion 98089.doc -47- 200527055 end portion 179 are formed on the ohmic contacts 161 and 165, and a passivation layer 180 is formed thereon. A plurality of contact holes 18, 182, and 185 are provided at the passivation layer 180 and the gate insulating layer 140. A plurality of pixel electrodes 1 90 and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180, and an alignment layer 11 is coated thereon. Regarding the common electrode panel 200, a light blocking member 220, a plurality of color light-reflecting sheets 230, a common electrode 270, and an alignment layer 21 are formed on an insulating substrate 210. Unlike the LCD as shown in 16-20, the common electrode panel 200 includes a plurality of inclined members 345 placed on the common electrode 270, while the TFT array panel 100 does not have an inclined member and the common electrode panel 200 does not have a cutout. . Like the inclined member 341, the inclined member 345 is preferably made of an insulator. Each of the inclined members 341 has a major edge and a minor edge so that it has a herringbone planar shape; the major edges are parallel to the data line 171 and are disposed on the data line ^ 丨; the minor edges are parallel to the gate Polar line. Each of the inclined members 341 has a protruding ridge 346 which is approximately arranged on and extends along an imaginary center line that divides the pixel electrode 192 into a left half and a right half, and a height from the ridge 346 to the Sloping surface with major edges reduced. It should be noted that in the figures, most of the main edges of the inclined member 345 are the same as the light blocking member 220. The protruding ridges 346 instead of the cutouts shown in FIGS. 17-19 are used to determine the tilt angle 346 of the LC molecule 3 10 preferably having a tilt angle of about 5-10 micrometers and a roll angle of about 0. The direction of the tilt determines the component. Ridge width. Within a range of 5-20 degrees with respect to the surface of the substrate 210, and the cell gap between the panel 100 (98089.doc 200527055 and 200) (that is, the thickness of the LC layer 3) varies from about M microns to about 2.0 microns. In addition, the 'common electrode 270 does not have an outer coating. Many of the above features of the LCD shown in FIGS. 16-20 can be adapted to the TFT array panel shown in FIGS. 26-29. A method of manufacturing the common electrode panel shown in Figs. 26 and 29 will be described in detail with reference to Fig. 30. 30 is a cross-sectional view of the common electrode panel shown in FIGS. 26-29 and a photomask for forming an inclined member in an intermediate step of a manufacturing method according to an embodiment of the present invention. Referring to FIG. 30, a light blocking member 220 preferably made of a chromium film and a chromium oxide film, a plurality of color filters 230, and a common electrode 27 are sequentially formed on an insulating substrate 21o. Next, a thick photosensitive organic insulating layer is coated on the common electrode 270, subjected to exposure through a photomask 500, and developed to form a plurality of inclined members 345 including protruding ridge lines 346. The photomask 500 includes a light blocking region 502, a light transmitting region 503, and a translucent region 501 having a plurality of slits facing the ridge line 346 of the inclined member 345. The width of the slit increases from the light blocking region 502 to the light transmitting region 503. However, the distance between the slits may be reduced from the light blocking region 502 to the light transmitting region 503. Looking at Figures 3 1-34, a [CD according to another embodiment of the present invention is described in detail. FIG. 31 is a layout diagram of an LCD TFT array panel according to another embodiment of the present invention, FIG. 32 is a layout diagram of a common electrode panel of an LCD according to an embodiment of the present invention, and FIG. 33 is a diagram including those shown in FIG. 31. The layout of the TFT array panel 98089.doc-49-200527055 shown and the LCD layout of the common electrode panel shown in FIG. 32, and FIG. 34 is a cross-sectional view taken along the line χχχιν-χχχιν of the LCD shown in FIG. 31-34, the LCD according to this embodiment also includes: a TFT array panel 100, a common electrode panel 200, an LC layer 3 inserted between the panels 100 and 2000, and a plurality of columnar partitions. The sheet 32 and a pair of polarizers 12 and 22 and a pair of retardation films η and 23 attached to the outer surfaces of the panels 100 and 2000. The layered structures of the panels 100 and 200 according to this embodiment are almost the same as those shown in FIGS. 1-4. Regarding the TFT array panel 100, a plurality of gate lines 121 and a plurality of storage electrode lines 31 including a gate electrode 124 and a terminal portion 129 are formed on the substrate 11 ′, and the gate insulating layer 140 includes a plurality of protrusions 154. A plurality of semiconductor stripes 151, and a plurality of ohmic contact stripes 61 and a plurality of ohmic contact islands 165 including protrusions 163 are sequentially formed thereon. A plurality of data lines 171 including a source electrode 173 and a terminal portion 179, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 161 and 165, and a passivation layer 180 is formed thereon. A plurality of contact holes 181, 182, and 185 are provided at the passivation layer ι80 and the gate insulating layer 140. A plurality of pixel electrodes 19, a plurality of contact assistants 81 and 82, and a plurality of bridge lines 83 are formed on the passivation layer 18, and an alignment layer 11 is coated thereon. Regarding the common electrode panel 200, a light blocking member 220, a plurality of color light-transmitting sheets 230, a common electrode 270, and an alignment layer 21 are formed on an insulating substrate 210. Unlike the LCD shown in FIGS. 1-4, the color filter 230 of the common electrode panel 200 has a periodically inclined surface, and the TFT array panel 100 does not have a tilting member 98089.doc -50- 200527055. In addition, each pixel electrode 190 in the TFT array panel 100 shown in FIGS. 31, 33, and 34 has a center cutout 93, a pair of lower cutouts 94 & and 95a, and a pair of upper cutouts 941) and 951). The plurality of cutouts 93_95b divide the pixel electrode 190 into a plurality of sub-portions. The lower and upper cutouts 94a-95b are respectively disposed in the lower half and the upper half of the pixel electrode 19, and the central cutout 93 is positioned between the lower cutouts 94a and 95a and the upper cutouts 94b and 95b. The cutouts 93-95b generally have anti-symmetric properties regarding an imaginary lateral line that divides the pixel electrode 902 into a lower half and an upper half. The lower and upper cuts 94a-95b and the gate line 121 form an angle of about 45 degrees and extend substantially parallel to each other. The upper cuts 94b and 95b extend substantially orthogonal to the lower cuts 94a and 95a, and the lower cuts 94a and 95a also Extending generally parallel to each other. The cutouts 95a and 95b approximately extend from the left longitudinal edge of the pixel electrode 190 to the lateral edge of the pixel electrode 190. The cutouts 94a and 94b extend approximately from the left edge of the pixel electrode 190 to the right longitudinal edge of the pixel electrode 190. The central cutout 93 includes a lateral portion that extends approximately along the imaginary lateral line from the left edge of the pixel electrode 190, and extends from the lateral portion to the right edge of the pixel electrode 190 and is substantially parallel to the lower cutouts 94a and 95a and the upper cutout 94b, respectively. And 95b while extending a pair of inclined portions. Therefore, the lower half of the pixel electrode 190 is divided into four lower sub-portions by the lower cuts 94a and 95a and the central cut 93, and the upper half of the pixel electrode 190 is also divided by the upper cuts 94b and 95b and the central cut 93. The section is divided into four 98089.doc 200527055 upper π subsections. The number of sub-sections and the number of cutouts vary depending on the following design factors, such as the pixel size, the ratio of the lateral edge to the vertical edge of the pixel electrode 1, the type and characteristics of the LC layer 3. The common arpeggio 270 has a set of a plurality of cutouts 73-75b. The set of cutouts 73-75b faces the pixel electrode 19 and includes a pair of center cuts 73 and 74 and a pair of lower and upper cutouts 75 & and 75b and. Each of the cutouts 73-75b is placed between the adjacent cutouts 93 · 9 讣 of the pixel electrode 19o or between the cutouts 95a or 95b and the corner of the pixel electrode 19o. In addition, each of the cutouts 73-75b has at least one inclined portion extending parallel to the lower cutout 95a and the upper cutout 94b & 95b of the pixel electrode 19. The cutouts 73-75b have an anti-symmetrical property about the imaginary transverse line. Each of the blades 76 & 76b has a slanted portion extending approximately from the left edge of the pixel electrode 19 to the pixel electrode, one of the lower or upper edge of the pixel electrode, and along the pixel from the respective ends of the slanted portion. The edge of the electrode 19 is extended to overlap the edge of the pixel electrode 190, and the horizontal and vertical portions are at an obtuse angle with the inclined portion. Each of the cutouts 75a and 75b has a slanted portion'-a longitudinal portion connected to one end of the slanted portion and an enlarged portion connected to the other end of the slanted portion. The inclined portion extends approximately from the left edge of the pixel electrode 190 to the lower right or upper right corner of the pixel electrode 190. The longitudinal portion self-tilted portion extends along the left edge of the pixel electrode 19o, overlaps the left edge of the pixel electrode 190, and forms an obtuse angle with the inclined portion. The enlarged portions cover respective corners of the pixel electrode 19. The cutout 74 has a pair of inclined portions extending approximately from the center of the left edge of the pixel electrode 19 to 98089.doc -52- 200527055 to one of the right edges of the pixel electrode 190; extending from the father's meeting point of the inclined portions to one of the left A lateral portion, and a pair of longitudinal portions extending from the respective inclined portions along the right edge of the pixel electrode 190, overlapping the right edge of the pixel electrode 190, and forming an obtuse angle with the respective inclined portion. The cutout 73 has a lateral portion extending along the lateral centerline of the pixel electrode 190; a pair of inclined portions extending approximately from the lateral portion to the right edge of the pixel electrode 190 and forming a pure angle with the lateral portion; from the respective inclined portions A pair of longitudinal portions extending along the right edge of the pixel electrode 19 and overlapping the right edge of the pixel electrode 19 and forming a pure angle with the respective inclined portions. The number of the cutouts 73-75b may vary depending on design factors, and the light blocking member 220 may also overlap the cutouts 73-75b to block optical leakage through the cutouts. The inclined surface preferably has a roll angle that varies within a range of about u degrees. The inclined surface has a maximum height at the cuts 73-76b and a minimum height at the point facing the cuts 93_95b. Because the distance between the common electrode 270 and the pixel electrode 19 can vary, the seek line and the electric field therebetween can also vary depending on the distance. The electric field becomes stronger where the distance is small, so that the LC molecule 310 shows a fast response time. ~ Inch As shown in FIGS. 37-38 showing other exemplary cross-sectional views of the LCD shown in FIGS. 31-33, the cross-sectional structure of the LCD shown in FIGS. 31 · 34 is variable. Fig. 37 shows that the surface of the color filter 23 is jagged, and therefore the common electrode 270 and the alignment layer 21 are also jagged. Each of the saw teeth 77 has an inclined surface having a roll angle of 98089.doc -53-200527055 of about 1 to 5 degrees and a vertical surface. The tilt direction is periodically reversed to form a plurality of concave and convex surfaces, and the concave surfaces face the cutouts 93-95b. The LCD may include a sawtooth disposed between the color filter 23 with a flat surface and the common electrode 270.状 表面 外包装 250。 Coating surface 250. FIG. 38 shows that the surface of the passivation layer 180 and the color filter 23 are periodically inclined so that the concave surface and the convex surface thereof are alternately arranged. A method of manufacturing the TFT array panel shown in FIGS. 3 to 34 according to an embodiment will be described in detail with reference to FIGS. 35 A-35C. 35A-35C are cross-sectional views of the common electrode panel shown in FIGS. 31-34 in an intermediate step of a manufacturing method thereof according to an embodiment of the present invention. Referring to FIG. 35A, a light blocking member 220 preferably made of a photosensitive organic insulator containing a black pigment is formed on an insulating substrate 210. Referring to FIG. 35B, a photosensitive organic film including a red, green, or blue pigment is applied, and the photomask 600 and the substrate 210 are aligned. The photomask 600 includes a transparent substrate 610, and a light blocking member 620 spaced apart from each other by a predetermined distance to form a slit. The width of the light blocking members 620 decreases away from the reference point τ, or the distance between the blocking members 620 increases away from the reference point τ. The shaded parts shown in Figure 35β indicate the parts to be removed. The photosensitive film is then exposed and developed through a photomask 600 to form a plurality of color filters 2 3 0 as shown in FIG. 3 5C. With reference to FIG. 34, a common electrode 复 having a plurality of cut sections is formed on the color filter 230. The common electrode 270 may not have a cut. Among the above-mentioned features of the LCD shown in Figs. 1-4, most of the T-like ones can be applied to the TFT array panel shown in Fig. 98089.doc -54- 200527055 31-35C. A method of manufacturing a TFT array panel according to an embodiment will be described in detail with reference to FIGS. 36A-36D. 36A-36D are cross-sectional views of a common electrode panel in an intermediate step of a manufacturing method thereof according to an embodiment of the present invention. Referring to FIG. 36A, a light blocking member 220 preferably made of a photosensitive organic insulator containing a black pigment is formed on an insulating substrate 210. Referring to FIG. 36B, a plurality of color filters 230 are formed on the substrate 210 and the photoresist-based member 220. Referring to Fig. 36C, a photosensitive organic thin film is applied and aligned with a photomask 700 including a transparent substrate 710 and a light blocking member 720 as the substrate 210 as shown in Fig. 35B. The shaded parts shown in Fig. 3 6C indicate the parts to be removed. Next, the photosensitive film is exposed and developed via the photomask 700 to form an overcoat layer 25 having a periodically inclined surface as shown in FIG. 36D. Finally, a common electrode (not shown) is formed on the overcoat layer 25.

36A-36D中所展示之TFT陣列面板。TFT array panel shown in 36A-36D.

面切換 (IPS)型LCD之任何類型的LCD。Any type of LCD (IPS) LCD.

項技術者應瞭解,在不脫離如 述的本發明之精神及範疇的情況下替代。 附加之申請專利範圍中所陳 況下可對其進行多種修改及 98089.doc •55- 200527055 【圖式簡單說明】 圖1為根據本發明之一實施例的]LCD之TFT(薄膜電晶體) 陣列面板之布局圖; 圖2為根據本發明之一實施例之LCD的共同電極面板之 布局圖; 圖3為包括圖!中所展示之TFT陣列面板及圖2中所展示 之共同電極面板的LCD之布局圖; 圖4為圖3t所展示之LCD沿線IV-IV,所截得之截面圖; 圖5為說明針對具有多種側傾角之傾斜構件的液晶之所 量測之回應時間的表袼; 圖6為根據本發明之另一實施例的LCD之布局圖; 圖7為圖6中所展示之LCD沿線νπ_νιι,所截得之截面圖; 圖8為根據本發明之另一實施例的咖之共同電極面板 之布局圖; 圖9為包括圖…斤展示之TFT陣列面板及圖8中所展示 之共同電極面板的LCD之布局圖; 圖0為圖9中所展不之乙⑶沿線χ_χ,所截得之截面圖; 圖11為根據本發明之另一實施例的LCD之布局圖; 圖12為圖i!中所展示之㈣沿線χπ·χιι,所截得之截面 圖; 圖13為共同電極面板及一用於根據本發明之一實施例之 在其製造方法的中間步驟中形成傾斜構件之光罩的截面 圖; 圖14說明與傾斜構件對準之光罩的狹縫; 98089.doc 200527055 圖15說明根據本發明之另一實施例的傾斜構件; 圖丨6為根據本發明之一實施例的[CD之TFT陣列面板之 布局圖; 圖17為根據本發明之一實施例的[CD之共同電極面板之 布局圖; 圖18為包括圖16中所展示之TFT陣列面板及圖17中所展 示之共同電極面板的LCD之布局圖; 圖19為圖18中所展示之LCD沿線XIX-XIX,所截得之截面 圖; 圖20為圖18中所展示之LCD沿線XX-XX’及χχ,_χχ,,所截 得之截面圖; 圖21Α及21Β為圖16及圖18-20中所展示之TFT陣列面板 在根據本發明之一實施例之其製造方法的中間步驟中分別 沿線XIX-XIX’及線χχ_χχ,及χχ,-χχ”所截得之截面圖; 圖22 A及22B為圖16及圖18-20中所展示之TFT陣列面板 在遵循圖21A及21B中所展示之步驟之製造方法的步驟中 分別沿線XIX-XIX,及線χχ-χχ,及ΧΧ,_ΧΧ”所截得之截面 圖; 圖23為根據本發明之另一實施例的LCD之布局圖; 圖24及25為圖23中所展示之LCD分別沿線XXIv_XXIVf 及XXV-XXV’所截得之截面圖; 圖26為根據本發明之另一實施例的LCD之共同電極面板 之布局圖; 圖27為包括圖16中所展示之TFT陣列面板及圖26中展示 98089.doc -57- 200527055 之共同電極面板的LCD之布局圖; 圖28及29為圖27中所展示之LCD分別沿線XXIV-XXIV, 及XXV-XXV’所截得之截面圖; 圖30為圖26-29中所展示之共同電極面板及一用於在根 據本發明之一實施例之其製造方法的中間步驟中形成傾斜 構件之光罩的截面圖; 圖3 1為根據本發明之另一實施例的[CD之TFT陣列面板 之布局圖; 圖32為根據本發明之一實施例的[CD之共同電極面板之 布局圖; 圖33為包括圖31中所展示之TFT陣列面板及圖32中所展 示之共同電極面板的LCD之布局圖; 圖34為圖33中所展示之LCD沿線XXXIV_XXXIV,所截得 之截面圖; 圖35A-35C為在根據本發明之一實施例之其製造方法的 中間步驟中圖31-34中所展示之共同電極面板的截面圖; 圖36A-36D為在根據本發明之一實施例之其製造方法的 _間步驟中之共同電極面板的截面圖;及 圖37及38展示圖31-33中所展示之LCD的其它例示性截 面圖。 【主要元件符號說明】 ^ 液晶層 11、 21 對準層 12、 22 偏光器 98089.doc 58- 200527055 71-76 、 79 ' 91-95 切口 81、82 接觸助件 83 跨橋線 100 TFT陣列面板 110 、 210 絕緣基板 121 、 129 閘極線 124 閘電極 131 儲存電極線 133a-133d 、 135 儲存電極 133e 連接 140 閘極絕緣層 151 半導體條紋 154 半導體條紋之凸出 161 歐姆接觸條紋 163 歐姆接觸條紋之凸出 165 歐姆接觸島狀物 171 、 179 資料線 173 源電極 175 >及電極 180 鈍化層 181、182、183a、 183b 、 185 接觸孔 190 像素電極 200 共同電極面板Those skilled in the art should understand that they can be substituted without departing from the spirit and scope of the invention as described. Various modifications can be made under the conditions in the scope of the attached patent application and 98089.doc • 55- 200527055 [Simplified diagram] Figure 1 is a TFT (thin film transistor) of an LCD according to an embodiment of the present invention Layout diagram of an array panel; Figure 2 is a layout diagram of a common electrode panel of an LCD according to an embodiment of the present invention; Figure 3 is a diagram including it! The layout of the TFT array panel shown in Figure 2 and the LCD of the common electrode panel shown in Figure 2; Figure 4 is a cross-sectional view taken along the line IV-IV of the LCD shown in Figure 3t; Tables showing the measured response times of liquid crystals with tilting members of various roll angles; Figure 6 is a layout diagram of an LCD according to another embodiment of the present invention; Figure 7 is a line νπ_νιι of the LCD shown in Figure 6 A cross-sectional view taken; FIG. 8 is a layout diagram of a common electrode panel according to another embodiment of the present invention; FIG. 9 is a schematic view of a common electrode panel including the TFT array panel shown in FIG. 8 and the common electrode panel shown in FIG. 8 LCD layout diagram; Figure 0 is a cross-sectional view taken along the line χ_χ shown in Figure 9; Figure 11 is a layout diagram of an LCD according to another embodiment of the present invention; Figure 12 is a diagram i! Fig. 13 shows a common electrode panel and a photomask for forming an inclined member in an intermediate step of a manufacturing method thereof according to an embodiment of the present invention. Sectional view; Figure 14 illustrates the 98089.doc 200527055 FIG. 15 illustrates a tilting member according to another embodiment of the present invention; FIG. 6 is a layout diagram of a [CD TFT array panel according to an embodiment of the present invention; FIG. 17 is a layout view of a TFT array panel according to the present invention; [Layout of a common electrode panel of a CD according to an embodiment; FIG. 18 is a layout diagram of an LCD including a TFT array panel shown in FIG. 16 and a common electrode panel shown in FIG. 17; A cross-sectional view taken along the line XIX-XIX of the LCD shown; FIG. 20 is a cross-sectional view taken along the line XX-XX 'and χχ, _χχ, of the LCD shown in FIG. 18; FIGs. 21A and 21B are FIG. 16 And cross-sectional views taken along lines XIX-XIX 'and lines χχ_χχ, and χχ, -χχ "in the intermediate steps of a manufacturing method thereof according to an embodiment of the present invention and the TFT array panel shown in Figs. 18-20. 22A and 22B are the TFT array panels shown in FIGS. 16 and 18-20 along the lines XIX-XIX and χχ-χχ, respectively, in the steps of the manufacturing method following the steps shown in FIGS. 21A and 21B, And XX, _ΧΧ "cross-sectional view; Figure 23 is another according to the present invention 24 and 25 are cross-sectional views of the LCD shown in FIG. 23 taken along lines XXIv_XXIVf and XXV-XXV ', respectively; FIG. 26 is a common view of an LCD according to another embodiment of the present invention Layout diagram of electrode panel; FIG. 27 is a layout diagram of an LCD including a TFT array panel shown in FIG. 16 and a common electrode panel showing 98089.doc -57- 200527055 shown in FIG. 26; FIGS. 28 and 29 are shown in FIG. 27. The LCDs shown are cross-sectional views taken along the lines XXIV-XXIV, and XXV-XXV '; FIG. 30 is a common electrode panel shown in FIGS. 26-29 and a manufacturing method for a common electrode panel according to an embodiment of the present invention. A cross-sectional view of a mask forming an inclined member in an intermediate step of the method; FIG. 31 is a layout diagram of a TFT array panel of a CD according to another embodiment of the present invention; FIG. 32 is a view of a [ CD common electrode panel layout; Figure 33 is a layout diagram of an LCD including the TFT array panel shown in Figure 31 and the common electrode panel shown in Figure 32; Figure 34 is the LCD along line XXXIV_XXXIV shown in Figure 33 , The cross-sectional view taken; Figures 35A-35C are based on A cross-sectional view of a common electrode panel shown in FIGS. 31-34 in an intermediate step of a manufacturing method of an embodiment of the invention; FIGS. 36A-36D are in steps of a manufacturing method thereof according to an embodiment of the present invention A cross-sectional view of a common electrode panel; and FIGS. 37 and 38 show other exemplary cross-sectional views of the LCD shown in FIGS. 31-33. [Description of main component symbols] ^ Liquid crystal layer 11, 21 Alignment layer 12, 22 Polarizer 98089.doc 58- 200527055 71-76, 79 '91-95 Notch 81, 82 Contact aid 83 Cross-bridge line 100 TFT array panel 110, 210 insulating substrate 121, 129 gate line 124 gate electrode 131 storage electrode line 133a-133d, 135 storage electrode 133e connection 140 gate insulation layer 151 semiconductor stripe 154 semiconductor stripe protrusion 161 ohmic contact stripe 163 ohmic contact stripe 165 ohm contact island 171, 179 data line 173 source electrode 175 > and electrode 180 passivation layer 181, 182, 183a, 183b, 185 contact hole 190 pixel electrode 200 common electrode panel

98089.doc -59- 20052705598089.doc -59- 200527055

220 光阻塞構件 225 開口 230 彩色濾光片 250 外塗層 270 共同電極 310 液晶分子 320 柱狀分隔片 335 、 336a 傾斜構件 330-333b 、 335-336b 、 傾斜構件 341 、 345 346 隆脊220 light blocking member 225 opening 230 color filter 250 overcoat 270 common electrode 310 liquid crystal molecules 320 columnar separator 335, 336a inclined member 330-333b, 335-336b, inclined member 341, 345 346 ridge

98089.doc -60-98089.doc -60-

Claims (1)

200527055 十、申請專利範圍: 1 · 一種液晶顯示器面板,其包含: 一基板; 一形成於該基板上之場產生電極;及 一形成於該基板上並具有一小於約45度之側傾角的傾 斜構件。 2·如請求項1之液晶顯示器面板,其中該側傾角小於約2〇 度。 3·如睛求項2之液晶顯示器面板,其中該側傾角在約1 _丨〇度 之一範圍内。 4·如請求項3之液晶顯示器面板,其令該側傾角在約ι·5度之 一範圍内。 5·如請求項3之液晶顯示器面板,其中該傾斜構件具有一逐 漸減小之高度。 6 ·如明求項3之液晶顯示器面板,其中該傾斜構件具有一曲 面。 7·如請求項3之液晶顯示器面板,其中該傾斜構件包括一向 上突起之隆脊。 8·如請求項3之液晶顯示器面板,其中該場產生電極具有一 切口 〇 9 ·如°月求項8之液晶顯示器面板,其中該傾斜構件具有一大 體上與該切口 一致之隆脊。 10 ·如明求項3之液晶顯示器面板’其中該傾斜構件具有一大 體上與該場產生電極之一邊緣一致之隆脊。 98089.doc 200527055 11. 12. 13. 14. 15. 16. 17. 18. 19. 如請求項3之液晶顯示器面板,其中該傾斜構件包含感光 性有機絕緣體。 如請求項3之液晶顯示器面板,其中該傾斜構件係安置於 該場產生電極上。 如請求項12之液晶顯示器面板,其進一步包含一安置於 該傾斜構件上之對準層。 一種液晶顯示器,其包含: 一基板; 一幵> 成於該基板上之第一場產生電極; 一安置於該第一場產生電極對面之第二場產生電極; 一安置於該第一場產生電極與該第二場產生電極之間 的液晶層;及 一形成於該基板上並具有一減少該液晶層之回應時間 的傾斜表面之傾斜構件。 如睛求項14之液晶顯示器,其中該側傾角在約^⑺产 範圍内。 Λ 如請求項Η之液晶顯示器,其中該傾斜構件具有 減小之高度。 / ^求項Η之液晶顯示器,其進一步包含—決定該液晶 二中之液晶分子在施加一電場之情況下的傾斜方向之第 一傾斜方向決定構件。 如明求項17之液晶顯示器,直中 如請求項18之液晶顯示器’其中該傾斜構件係安置 杜包含—在該第一場產生電極處中:第=方向決定構 於言! 98089.doc -2 - 200527055 第二場產生電極上。 20。 21. 22. 23. 24. 25. 26. 27. 28. 如租求項19之液晶顯示器,其中該傾斜構件具有一與該 第一切口交替排列之隆脊。 如請求項20之液晶顯示器,其中該傾斜構件之該隆脊大 體上與該第一場產生電極之一邊緣一致。 如請求項20之液晶顯示器,其進一步包含一第二傾斜方 向決定構件,其包括—在該第二場產生電極處之第二切 口 0 如明求項22之液晶顯示器,其中該傾斜構件具有一大體 上與該第二切口一致之隆脊。 如睛求項14之液晶顯示器,其中該傾斜構件包含有機絕 緣體’其具有一等於或小於該液晶層之介電常數的介電 常數。 如明求項14之液晶顯示器,其中該液晶層具有負各向異 性且其經一垂直對準。 如明求項14之液晶顯示器,其中該第一場產生電極具有 重叠該第二場產生電極之多個邊緣,且該第二場產生電 極不具有切口。 如請求項14之液晶顯示器,其中該傾斜構件具有在約 0·5_2.〇微米之一範圍内的厚度。 一種液晶顯示器面板,其包含: 一基板; 一閘極線; 一與第一訊號線相交之資料線; 98089.doc 200527055 一連接至該閘極線及該資料線之薄膜電晶體; 一連接至該薄膜電晶體之像素電極;及 一安置於該像素電極上並具有一小於約45度之側傾角 的傾斜構件。 2 9 ·如明求項2 §之液晶顯示器面板,其中該側傾角在約1 · 1 〇 度之—範圍内。 30·如明求項29之液晶顯示器面板’其中該傾斜構件具有一 曲面。 女明求項2 8之液晶顯示器面板,其中該傾斜構件包括一 大體上安置於該像素電極之邊緣上的隆脊。 32·如請求項31之液晶顯示器面板,其中該資料線及該像素 電極係彎曲的,且該像素電極具有一凸邊及一平行於該 凸邊之凹邊。 33. 如請求項28之液晶顯示器面板,其中該像素電極具有一 切口,且該傾斜構件包括一大體上與該像素電極之該切 口 一致之隆脊。 34. 如請求項33之液晶顯示器面板,其中該切口具有一關於 將。亥像素電極-等分成上半部及下半部之線的反對稱 性0 其中該切口傾斜於該閘 其中該切口與該閘極線 其進一步包含一安置於 35·如睛求項34之液晶顯示器面板, 極線而延伸。 3 6.如請求項34之液晶顯示器面板, 成一約4 5度之夾角。 37·如請求項28之液晶顯示器面板, 98089.doc 200527055 38. 39. 40. 41. 42. 43. 44. 45. 46. 與該閘極線一樣之層上並重疊該像素電極之儲存電極。 一種液晶顯示器面板,其包含: 一基板; 形成於該基板上並具有一第一區域之場產生電極;及 複數個安置於該場產生電極上之傾斜構件,其具有傾 斜表面並佔用一大於該第一區域之一半的區域。 如叫求項3 8之液晶顯示器面板,其中該等傾斜構件具有 一安置於一第二區域中之週期性重複最小單元圖案,且 该第一區域包括複數個該等第二區域。 月求項3 8之液晶顯示器面板,其中該側傾角在約卜^ 〇 度之一範圍内。 如凊求項38之液晶顯示器面板,其中該場產生電極大體 上元王覆盖該基板。 如睛求項38之液晶顯示器面板,其中該等傾斜構件包括 向上突起之隆脊。 如明求項38之液晶顯示器面板,其中該場產生電極具有 “切口,且該等傾斜構件包括大體上與該切口一致之隆 脊0 女明求項38之液晶顯示器面板,其中該等傾斜構件呈 在、力0、·5·2·〇微米之〜範圍内的厚度。 ^睛求項38之液晶_示器面板,其中該傾斜構件包含感 光性有機絕緣體。 心 種/夜晶顯示器,其包含: 一第一基板; 98089.doc 200527055 複數個形成於該第一基板上之第一場產生電極· 一面向該第一基板之第二基板; 一安置於該第二基板上之第二場產生電極; -安置於該等第-場產生電極與該第二場產生電極之 間的液晶層;及 一 ά,压土 %極 其中之一上之傾斜構件,每一傾斜構件具有一自一隆脊 逐漸減小之高度。 47. 48. 49. 50. 51. 52. 如請求項46之液晶顯示器’其中該等傾斜構件具有一在 約1-10度之範圍内的斜面。 如吻求項4 6之液晶顯示器,盆中琴莖笛 ^兵甲4寻第一場產生電極皆 具有一第一區域,且該等傾斜構件皆佔用一大於該第一 區域之一半的區域。 ::求項46之液晶顯示器’其中該等傾斜構件減少該液 日日層之回應時間。 如请求項46之液晶顯示器’其進一步包含複數個第一傾 斜:向決:定構件,其決定該液晶層中之液晶分子在施加 了電場之情況下的傾斜方向且安置於該第—基板上 的, 寻傾斜構件係 女置於該第 第一傾斜方向決定構件交替排列 如研求項5〇之液晶顯示 構 "丁益其中忒寻弟-傾斜方向決 3在该第寻一場產生電極處之複數個第—切口 如睛求項5 〇之、a姑一 、之液日日頌不器,其進一步包含複數個第二 98089.doc 200527055 斜方向決定構件,其決定該液晶層中 了-電場之情況下的傾斜方向 :刀子在施加 上。 且係女置於該第二基板 5==2之液晶顧示器’其中該等傾斜構件之該等隆 '大體上與該等第二傾斜方向決定構件一致。手隆 54 之液晶顯示器,其中該等第二傾斜方向決定 55 士 在以二場產生電極處之複數個第二切Π。 .=!16之液晶顯示器,其進一步包含複數個第-傾 了-電牛’其決定該液晶層中之液晶分子在施加 :,電~之情況下的傾斜方向,且係安置於該第二基板 其中該等傾斜構件係安置於該第—基板上,且與 第—傾斜方向決定構件交替排列。 56.如睛求項55之液晶顯示器,其中該等第—傾斜方向 構件包含在該第二場產生電極處之複數個第一切口。 57·如請求項56之液晶顯示器,其進一步包含複數個第二傾 斜方向决定構件,其決定該液晶層中之液晶分子在施加 了 一電場之情況下的傾斜方向,且係安置於該第一基板 58·如睛求項57之液晶顯示器,其中該等傾斜構件之該等隆 脊大體上與該等第二傾斜方向決定構件一致。 〆 5 9 ·如睛求項5 8之液晶顯示器,其中該等第二傾斜方向決— 構件包含在該等第一場產生電極處之複數個第二切口。 98089.doc200527055 10. Scope of patent application: 1. A liquid crystal display panel comprising: a substrate; a field generating electrode formed on the substrate; and a tilt formed on the substrate and having a roll angle of less than about 45 degrees member. 2. The LCD panel of claim 1, wherein the roll angle is less than about 20 degrees. 3. The liquid crystal display panel as described in item 2, wherein the roll angle is in a range of about 1 °. 4. The liquid crystal display panel as claimed in claim 3, so that the roll angle is within a range of about 5 degrees. 5. The liquid crystal display panel as claimed in claim 3, wherein the inclined member has a gradually decreasing height. 6 · The liquid crystal display panel of claim 3, wherein the inclined member has a curved surface. 7. The liquid crystal display panel of claim 3, wherein the inclined member includes a ridge protruding upward. 8. The liquid crystal display panel according to claim 3, wherein the field generating electrode has a cutout. 9 · The liquid crystal display panel according to claim 8, wherein the tilting member has a ridge that substantially coincides with the cutout. 10. The liquid crystal display panel of item 3 of the Ming Dynasty, wherein the inclined member has a ridge that substantially coincides with an edge of one of the field generating electrodes. 98089.doc 200527055 11. 12. 13. 14. 15. 16. 17. 18. 19. The liquid crystal display panel of claim 3, wherein the inclined member comprises a photosensitive organic insulator. The liquid crystal display panel of claim 3, wherein the tilting member is disposed on the field generating electrode. The liquid crystal display panel of claim 12, further comprising an alignment layer disposed on the inclined member. A liquid crystal display device comprising: a substrate; a first field generating electrode formed on the substrate; a second field generating electrode disposed opposite the first field generating electrode; a second field generating electrode disposed on the substrate; A liquid crystal layer between the generating electrode and the second field generating electrode; and an inclined member formed on the substrate and having an inclined surface that reduces a response time of the liquid crystal layer. For example, the liquid crystal display of item 14, wherein the roll angle is within a range of about ⑺. Λ The liquid crystal display of claim Η, wherein the inclined member has a reduced height. / ^ The liquid crystal display of claim 2, further comprising: a first tilting direction determining member that determines a tilting direction of the liquid crystal molecules in the liquid crystal 2 when an electric field is applied. For example, the liquid crystal display of item 17 is requested, and the liquid crystal display of item 18 is provided as described in claim 18, wherein the tilting member is placed in the place where the electrode is included: in the first field generating electrode: the third direction is determined by the word! 98089.doc- 2-200527055 The second field is generated on the electrode. 20. 21. 22. 23. 24. 25. 26. 27. 28. The liquid crystal display of item 19, wherein the inclined member has a ridge alternately arranged with the first cut. The liquid crystal display of claim 20, wherein the ridge of the inclined member substantially coincides with an edge of the first field generating electrode. The liquid crystal display of claim 20, further comprising a second tilt direction determining member, including a second cutout at the second field generating electrode. The liquid crystal display of claim 22, wherein the tilt member has a A ridge substantially consistent with the second incision. For example, the liquid crystal display of item 14, wherein the inclined member includes an organic insulator 'having a dielectric constant equal to or smaller than that of the liquid crystal layer. The liquid crystal display of claim 14, wherein the liquid crystal layer has negative anisotropy and is vertically aligned. For example, the liquid crystal display of claim 14, wherein the first field generating electrode has a plurality of edges overlapping the second field generating electrode, and the second field generating electrode does not have a cutout. The liquid crystal display of claim 14, wherein the inclined member has a thickness in a range of about 0.5 to 2.0 micrometers. A liquid crystal display panel includes: a substrate; a gate line; a data line intersecting with a first signal line; 98089.doc 200527055 a thin film transistor connected to the gate line and the data line; A pixel electrode of the thin film transistor; and an inclined member disposed on the pixel electrode and having a roll angle of less than about 45 degrees. 2 9 · The LCD panel of item 2 §, wherein the roll angle is within a range of about 1.10 degrees. 30. The liquid crystal display panel of item 29, wherein the inclined member has a curved surface. Nu Ming's LCD panel of claim 28, wherein the inclined member includes a ridge substantially disposed on an edge of the pixel electrode. 32. The liquid crystal display panel of claim 31, wherein the data line and the pixel electrode are curved, and the pixel electrode has a convex edge and a concave edge parallel to the convex edge. 33. The liquid crystal display panel of claim 28, wherein the pixel electrode has a cutout, and the inclined member includes a ridge substantially consistent with the cutout of the pixel electrode. 34. A liquid crystal display panel as claimed in item 33, wherein the cutout has an about. The pixel electrode-antisymmetric of the line equally divided into the upper half and the lower half. 0 where the cut is inclined to the gate, where the cut and the gate line further include a liquid crystal disposed at 35. The display panel is polarized. 36. The LCD panel of claim 34, at an angle of about 45 degrees. 37. The liquid crystal display panel of claim 28, 98089.doc 200527055 38. 39. 40. 41. 42. 43. 44. 45. 46. The storage electrode on the same layer as the gate line and overlapping the pixel electrode . A liquid crystal display panel includes: a substrate; a field generating electrode formed on the substrate and having a first region; and a plurality of inclined members disposed on the field generating electrode, having an inclined surface and occupying more than one Area of the first half. For example, the liquid crystal display panel of claim 38, wherein the inclined members have a periodically repeating minimum unit pattern disposed in a second region, and the first region includes a plurality of the second regions. The liquid crystal display panel of the month 38, wherein the roll angle is in a range of about one degree. For example, the liquid crystal display panel of item 38, wherein the field generating electrode generally covers the substrate. The LCD panel of item 38, wherein the inclined members include ridges protruding upward. Such as the liquid crystal display panel of item 38, wherein the field generating electrode has a “notch, and the inclined members include ridges substantially consistent with the notch. 0 The liquid crystal display panel of woman item 38, wherein the inclined members The thickness is in the range of 0, · 5, · 2, 2 µm. The liquid crystal display panel of item 38, wherein the inclined member includes a photosensitive organic insulator. Including: a first substrate; 98089.doc 200527055 a plurality of first field generating electrodes formed on the first substrate; a second substrate facing the first substrate; a second field disposed on the second substrate Generating electrodes;-a liquid crystal layer disposed between the first-field generating electrodes and the second field-generating electrodes; and a tilting member on one of the pressing electrodes, each tilting member having a The ridges gradually decrease in height. 47. 48. 49. 50. 51. 52. The liquid crystal display of claim 46, wherein the inclined members have an inclined surface in a range of about 1-10 degrees. Item 4 6 of liquid crystal display The first electrode of the first field generating electrode has a first area, and the inclined members occupy an area larger than one and a half of the first area. :: Liquid crystal display of item 46 'Which of the inclined members reduces the response time of the liquid-day-day layer. For example, the liquid crystal display of claim 46' further includes a plurality of first tilt: to determine: a fixed member, which determines that the liquid crystal molecules in the liquid crystal layer are applied. In the case of an oblique direction in the case of an electric field and disposed on the first substrate, the tilt-seeking member is placed on the first oblique direction determining member and arranged alternately, such as the liquid crystal display structure of the research term 50. Ding Yi忒 Xundi-oblique direction must be a plurality of first at the electrode where the first search field is generated-the incision such as the eye to find the term 5 〇, a 液, the liquid day chanting device, which further includes a plurality of second 98089 .doc 200527055 The oblique direction determines the component, which determines the oblique direction in the case of an electric field in the liquid crystal layer: a knife is applied. And it is placed on the second substrate 5 == 2 liquid crystal monitor 'where the The ridges of the equal-inclined member are generally consistent with the second tilt-direction determining members. The LCD display of the hand-long 54 determines which second tilt directions determine the number of the second two at the position where the electrodes are generated in two fields. The liquid crystal display of Π.. =! 16, further comprising a plurality of -tilt-batteries, which determines the oblique direction of the liquid crystal molecules in the liquid crystal layer when applying :, electricity, and is arranged at In the second substrate, the inclined members are disposed on the first substrate, and are alternately arranged with the first inclined direction determining member. 56. The liquid crystal display of item 55, wherein the first inclined members are included in The second field generates a plurality of first cuts at the electrodes. 57. The liquid crystal display of claim 56, further comprising a plurality of second tilt direction determining members, which determine the tilt direction of the liquid crystal molecules in the liquid crystal layer when an electric field is applied, and are arranged on the first Substrate 58. The liquid crystal display of item 57, wherein the ridges of the inclined members are substantially consistent with the second inclined direction determining members. 〆 5 9 · The liquid crystal display of item 5 8 as described above, wherein the second oblique direction is determined by the component including a plurality of second cutouts at the first field generating electrodes. 98089.doc
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US11592719B2 (en) 2005-12-05 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device

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US11592719B2 (en) 2005-12-05 2023-02-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
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US11899329B2 (en) 2005-12-05 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device

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