200525794 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體處理技術，且尤其係關於諸如半導 體衣置的具有增進之黏著品質之電子裝置及用於製造包括 黏著增強之有機層之裝置的方法。 【先前技術】 使用目鈾的方法論將有機材料層以光阻黏著形式黏著至 具有低表面能量材料層（諸如存在於表面上之Tefl时（聚四 氟乙婦）AF®)之基板，及將低表面能量材料黏著至一基板表 面很不充分。結果，微影處理之品質降低且無法將低表面 能量材料倂入多層裝置之各層中去。已有若干嘗試用來增 進諸如纽之有機#料至各種具有_録面月^量材料作^ 頂部表面之基板的黏著。由於缺乏預處理，有機光阻材料 將不會潤濕低表面能量表面，且因此不以有利於圖案化之 方式塗覆此等表面。雖然已利用諸多表面預處理選項，但 是證實了此等習知程式無法達到完成所有必需處理步驟所 需之黏著耐久性。此等程式中之某些產生了作用，其在性 質上很短，而就其餘程式而言，已觀察到光阻層在顯影步 驟中或在於諸如氫氧化銨（NH4〇H)溶液中（1〇%於水中）之 清洗溶液中浸潤的過程中自—晶圓表面剝離。此氫氧化録 _4_容液通常在隨後的處理步驟（諸如姓刻或沈積）之 前用來清洗晶圓表面。 最近，在改質表面以促進光阻黏著之努力中已關於預處 理選項進行了若干嘗試。此等選項包括：脫水㈣、卜線及 96439.doc 200525794 用作薄膜夹層之深紫外線（DUV)抗反射塗層之應用、標準 HMDS条氣上底漆（vap〇r prime)及基於若干矽烷之有機偶 合劑之應用。然而，此等方法中無一可充分地增進黏著。 目丽用作製備用於光阻塗覆之矽晶圓的方法之工業標準 方法係使用六甲基二矽胺烷（HMDS)來蒸氣上底漆晶圓表 面。然而，同種方式下HME)S僅與矽及其氧化物化學相容而 不與大部分的其他材料起反應。在矽表面上，HMDS自氣體 塗覆一拒水或拒其他含水溶液（諸如顯影劑或NH4〇H)之有 機單層。基板/光阻界面上薄膜之拒水性維持了充足的表面 能量來允許光阻黏貼及形成薄膜，但其阻止了隨後水處理 (諸如顯影或清洗）過程中的光阻薄膜之起離。已知表面上水 之接觸角為該表面之表面能量及拒水性之良好量測。在適 當上有HMDS底漆之矽表面上之水滴的接觸角通常量測在 65-72之間。另外已發現，習知的蒸氣上底漆僅持續三天 直至晶圓必須再次上底漆。此外’在蒸氣上底漆處理中， 通常將晶圓帶至15〇1：之溫度下超過3〇分鐘。此對於某些對 溫度敏感之應用不適合，且如前所述，使用HMDs蒸氣上底 漆對大部分低表面能量材料（諸如Tefl〇n或其他含氟聚合物） 沒有影響。 ϋ 如前所述，存在其他方法來促進有機材料至晶圓表面之 黏著’更具體而言為至低表面能量材料表面之㈣。該種 方法之-經常用以改質對蒸氣上底漆遲鈍之表面的方法係 使用化學氣體沈積法（CVD)在表面塗覆第二材料（諸如氮化 矽（SiN)或二氧化矽（Si〇))之薄層（<5〇〇 A)。此材料之沈積在 96439.doc 200525794 與習知的HMDS蒸（上底漆偶合時提供了光阻層至晶圓表 面之優良黏著。然而，隨後必須移除此種會引發額外問題 之’k層舉例而口，已發現一般藉由乾式姓刻技術之隨材 料的移除極具侵姓性且會導致易碎晶圓表層（wafers layer)之破壞。 仍存在其他方法來促進光阻至晶圓之黏著，諸如在用光 阻塗覆表面之前使用氧電聚來使表面粗链化並在表面上加 氧。此方法雖然I時增加了表面能量，但a由於分子内之 ^ ^ Φ ^ t ^ ^ ^ ® (low surface energy functional groups) 在重新移往表面時恢復了其原㈣低能量水+，其僅產生 -短暫的影[此外’表面粗糙度保持不#之程度。在使 用非晶Teflon娜之情況下，氧電製使該制⑽胸表面粗 I化且促進了黏著之增強，但允許光阻溶劑附著Tefi〇n AF®。另外，已提議利用與光阻材料混合之界面活性劑來 幫助潤濕表面。該方法複雜且由於藉由第一塗覆之潤濕通 常仍然不完全而使得需要雙層光阻塗層。通常，相對於光 阻需要10-15%之界面活性劑’但用第一塗層仍然僅產生 80%之覆蓋。 最後，已將其他的材料用作界面黏著促進劑。一直在使 心’且在光阻顯影劑乃然使用紹敍刻’藉此限制了解 析度。 口此，本發明之一目標為提供一種諸如半導體裝置、光 子裝置（Ph〇t〇nicdevice)、微流體襄置、聲波裝置、虔印模 板或其類似物之裝置’其包括一促進光阻至低表面能量材 96439.doc 200525794 之黏著 料的增強之黏著或低表面能量材料至一基板的增強 之界面材料。 本發明之另-目標為提供一種裝置，其包括_促進增強 之黏著的卩面材料，纟中，！：4後的《阻及卩面層之移除不 破壞下方之材料表面。 $ 本發明之另-目標為提供一種裝置，其包括—促進增強 之黏著且允許以-習&方法使用肖一習知钱刻方法偶合以 圖案化低表面能量層之光阻層的界面材料。 本發明之再一目標為提供一種製造設備之方法，其包括 以下步驟：提供一促進光阻至低表面能量材料之增強的黏 著或低表面能量材料至一基板之增強的黏著之界面材料。 【發明内容】 大體上已藉由提供裝置及製造該裝置之方法滿足了此等 需要及其它需要，該裝置包括：一基板、一低表面能量材 料層及一沈積在基板上且與該低表面能量材料層鄰近之非 晶碳層。製造該裝置之方法包括以下步驟：提供一具有一 表面之基板、在基板上沈積一低表面能量材料層，及在基 板表面上但鄰近該低表面能量材料層處沈積一非晶碳層。 該非晶碳層使用標準電漿增強化學氣體沈積技術（PECvD) 或藉由錢鑛來形成。 【實施方式】 在此描述過程中，根據說明本發明之不同圖式，類似標 號用來標記類似元件。此外，在較佳實施例之描述過程中 描述了 一半導體裝置，然而由此揭示仍然預見到術語，，裝置，， 96439.doc 200525794 匕括半^r體裝置、光子裝置、微流體裝置、聲波裝置、壓 印杈板或其類似物。因此，圖1以簡化截面圖說明製造根據 本發明之裝置（即半導體裝置）之方法的第一步驟。圖1中所 說明的為一半導體裝置，一般參看10,其包括作為第一步 驟之基板12之提供。在此特定實施例中，基板12描述為由 石夕或二氧化矽材料形成。更具體而言，基板12描述為由石夕 形成。應理解，由此揭示預見基板12係使用第八族材料製 ^ 其包括諸如GaAs、InGaAs、InA1 As或任何相似材料， 或任何其他通常用作半導體基板之材料，但不僅限於矽、 含石夕材料、某些金屬及金屬氧化物。 基板12已在上表面13上沈積低表面能量材料層14。低表 面能量材料層14通常由Teflon AF®形成，但亦揭示為由非 晶或半結晶（semi-crystalline)含氟聚合物之替代物、聚對二 甲苯基、基於聚矽氧之材料（諸如D〇w二苯幷環丁烯 BCB)，其將聚矽氧組份（聚二甲基矽氧烷）包括至其結構中） 或其類似物形成。在此特定實施例中，在基板12之表面Η 上提供低表面能量材料層14以向表面13提供低表面能量材 料獨有之固有特性，諸如拒水性、惰性、低黏貼/高可釋放 性（low stick/high releasability)、高電阻，且為了保護表面 12不受磨損、污染或其他雜質問題幹擾之目的。已發現低 表面能量材料層14通常很難潤濕，結果，沒有任何東西黏 貼或塗覆於其上。此阻止了低表面能量材料在諸多可能有 益之情況下的使用，諸如低介電值(1〇w_k)材料、非黏貼光 罩塗層、MEMS裝置、微流體、用於步進快閃式壓印微影 96439.doc -10- 200525794 (SFIL)技術之圖案化層或其類似物。為增加可濕性及增進 黏著’在低表面能量材料層14之最上表面1 5上沈積一非晶 碳層1 6。已揭示非晶碳層16由使用典型半導體沈積技術沈 積在低表面能量材料層14之表面15上的非晶碳材料形成。 更具體言之，非晶碳層16使用電漿增強化學氣體沈積法 (PECVD)或糟由錢鑛沈積在低表面能量材料層μ之表面15 上。應理解，使用電漿增強化學氣體沈積技術（pECVD)沈 積非晶碳層16時，其可包含其他元素，諸如氫、氮或氧。 非晶碳層16在基板12與光阻（目前所討論的）之間提供了增 強之黏著。 碳層16被揭示為由一非晶碳薄層形成。在此較佳實施例 中非晶碳層16使用工業領域熟知的標準PECvD技術或藉由 濺鍍以小於100 A之厚度且較佳地以30_7〇 a之厚度沈積。 此非晶碳層16之沈積導致了隨後沈積之光阻至低表面能量 材料層14之增進的黏著耐久性，其允許使用習知的光阻及 1虫刻處理技術處理低表面能量材料14。 見在茶看圖2及3，接著，將晶圓堆疊（一般地標示為丨〇) Ί 有機光阻堆疊20。有機光阻堆疊20可由一層或多層 一成像有機光阻層組成，該等有機光阻層包括彼等對光 及/或對電子束敏感之材料。如圖2所示，有機光阻堆疊“ =成為標準單層光阻，包括光阻層22。如圖3所示，在替代 —一 有機光阻堆疊20形成為多層光阻，諸如標準雙層 =阻，包括光阻層22及24。應理解，可視所要的圖案而定 “形成光阻堆疊20，以包括一正光阻或-負光阻，而與形 96439.doc 200525794 成為單光阻堆疊或多層光阻堆疊無關。 斤不’接者’使用諸如電子束、光或其類似物的標 H方法將晶圓堆疊10(更具體而言為光阻堆疊20)曝光 旦/案化1接著使用-合適的濕式化學顯影劑予以顯 圖所不，在顯影過程中移除堆疊2〇之區域％，從而 形成圖案。 、接著，在氧電漿中蝕刻完全顯影之晶圓堆疊分鐘， 、’、在圖案化步驟中曝光且為隨後之蝕刻步驟所提供之 非曰日反層16之一部分。接著，在氧中蝕刻堆疊_ 分 鐘，以移除低表面能量材料層14之一部分。接著，視需要 將堆$10次濕在10%iNH4〇H溶液中，通常持續時間為 刀釦。在隨後之步驟(意即蝕刻、金屬化或其類似物)前，提 供堆疊10在NH4〇H溶液中之浸濕，以清洗基板12之經曝光 表面13用以i測黏著強度及耐久性之標準為室溫下在 1+0%之氫氧化銨（NH4〇H)水溶液中10分鐘之浸濕。在此浸潤 蚪間中，光阻特徵應該不會發生任何甚至最小的通常小於 亞微米之起離或底切。 通常將非晶碳層16沈積約15秒且其容易由低或零偏壓氧 電漿（bias 0Xygen plasma)移除。如圖6所示，接著下一所要 之步驟，將有機光阻堆疊20及非晶碳層16移除。此移除步 驟可由包括濕式化學溶解（wet chemical dissolution)或氧電 漿灰化或其組合之技術來完成。如本文所揭示的，將使用 石反層及單或雙層光阻堆疊圖案化之晶圓的樣本顯影丨分鐘 並將其在10%之氫氧化銨溶液中浸潤1〇分鐘。使用掃描電 96439.doc -12- 200525794 子顯微鏡（SEM)對圖案化之光阻之細查揭露了光阻不起離 且其輪廓亦不顯示任何分層或底切之跡象。結果，結論為 非晶碳層16之包括物產生了很適用於有機光阻堆疊2〇黏著 之低表面能量材料層14之表面15。 由此揭示預見了碳層16由沈積在低表面能量材料層14之 表面15上之非晶碳以小於200 a之厚度而形成，但應理解層 16可具有一在範圍3〇a至1〇,〇〇〇 a内之厚度。在該較佳實施 例中，碳層16以一介於30-70A之間的厚度形成。揭示了兩 種類型之適用於製造碳層16之非晶碳。更具體而言，揭示 了用於碳層16之一種類聚合物之碳材料（PLC)及一種類金 剛石之碳材料（DLC)。在一較佳實施例中，類聚合物碳材料 被描述為〜60%為聚合的、含有可評估之量的氫、具有〜〇.9 g/cc之低密度值、〜2·〇 Gpa之硬度值及633 11111時11〜ι·7及 k 0·02之光學恆定資料的。類金剛石碳材料描述為〜聚 合的、含有可評估量之其他元素，諸如氮及氫且甚至可含 氧的、具有〜0·9 g/cc之較高密度值、〜8·〇 Gpa之硬度值及633 nm時η〜1.9及k〜0.20之光學恆定資料的。儘管並未測試落於 PLC及DLC說明之間的特定碳薄膜，鹹信在此應用中最好使 其平等地運作。藉由改變低表面能量材料層14之表面能 量，非晶碳層16提供了光阻堆疊20至低表面能量材料層14 之表面15的增強之黏著，使得提供了對光阻堆疊2〇的更強 之相容性且同時拒水或含水混合物。 在一替代實施例中，如圖7及圖8所示，在基板12,之最上 表面形成非晶碳層16,，且在非晶碳層16，之最上表面形成低 96439.doc -13- 200525794 表面能量材料層14，。應注意’所有與圖！所示之組份相似之 組份，均以相似標號表示，並增加了一單引號來指示不同 實施例。 更具體言之，在第二實施例中展示了一種其中需要在基 板12’上沈積一低表面能量材料14，之裝置。為促進低表面能 量材料14’至基板12,之黏著，在低表面能量材料14，沈積之 前，將非晶碳層16,沈積在基板12，上且與基板12，鄰近。此類 型之應用應有益於低介電值材料、非黏貼光罩塗層、MEMS 裝置、微流體及SFIL裝置之圖案化層。 如圖7及圖8所示，提供並使用與彼等揭示的用於圖^中 基板12之相似材料形成基板12,。接著，一非晶碳層16，沈積 在基板12’上且與基板12,之最上表面13，鄰近。非晶碳層i6, 揭不為由與彼等揭示的用於圖1-6中非晶碳層16之相似材 料形成’且其提供了在基板12,上之低表面能量材料14,的增 強之黏著。低表面能量材料層14,在此特定實施例中由 Teflon AF®形成，但應預見其可由如關於圖ι-6所描述之其 他低表面能量材料層形成。200525794 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to semiconductor processing technology, and more particularly, to an electronic device having improved adhesion quality such as a semiconductor garment and a device for manufacturing an organic layer including adhesion enhancement. Methods. [Prior art] Using the method of mesh uranium, the organic material layer is adhered to the substrate with a low surface energy material layer (such as Tefl (PTFE) AF®) on the surface in a photoresistive form, and Low surface energy materials do not adhere sufficiently to the surface of a substrate. As a result, the quality of lithography is reduced and it is not possible to incorporate low surface energy materials into the layers of a multilayer device. There have been several attempts to increase the adhesion of organic materials such as Niu to various substrates with a recording surface as the top surface. Due to the lack of pre-treatment, organic photoresist materials will not wet low surface energy surfaces and therefore will not coat these surfaces in a manner that facilitates patterning. Although many surface preparation options have been utilized, it has been proven that these conventional procedures cannot achieve the adhesive durability required to complete all necessary processing steps. Some of these procedures have worked, which are short in nature, while for the remaining procedures, it has been observed that the photoresist layer is in the development step or in a solution such as ammonium hydroxide (NH4OH) (1 〇% in water) in the cleaning solution infiltration process from the wafer surface peeled. This hydroxide solution is usually used to clean wafer surfaces before subsequent processing steps such as engraving or deposition. Recently, several attempts have been made regarding pre-treatment options in efforts to modify the surface to promote photoresist adhesion. These options include: dehydration, wire, and 96439.doc 200525794 applications of deep ultraviolet (DUV) anti-reflective coatings for film interlayers, standard HMDS strip primes and vapor prime based Application of organic coupling agents. However, none of these methods can sufficiently improve adhesion. Mully is the industry standard method for preparing silicon wafers for photoresist coating. The method is to use hexamethyldisilazane (HMDS) to vaporly prime the wafer surface. However, in the same way, HME) S is only chemically compatible with silicon and its oxides and does not react with most other materials. On the silicon surface, HMDS is self-gas coated with an organic monolayer that is water-repellent or resistant to other aqueous solutions such as developer or NH4OH. The water repellency of the film on the substrate / photoresist interface maintains sufficient surface energy to allow the photoresist to stick and form a film, but it prevents the photoresist film from coming off during subsequent water treatment (such as development or cleaning). It is known that the contact angle of water on a surface is a good measure of the surface energy and water repellency of the surface. The contact angle of water droplets on a silicon surface with a suitable HMDS primer is usually measured between 65-72. In addition, it has been found that the conventional vapor primer coating lasts only three days until the wafer must be primed again. In addition, in a steam-priming process, the wafer is usually brought to a temperature of 150: 1 for more than 30 minutes. This is not suitable for some temperature sensitive applications, and as mentioned earlier, the use of HMDs vapor primers has no effect on most low surface energy materials such as Teflon or other fluoropolymers. ϋ As mentioned previously, there are other ways to promote the adhesion of organic materials to the wafer surface, and more specifically to the surface of low surface energy materials. One of these methods-a method often used to modify the surface that is slow on the primer on vapor is to apply a second material such as silicon nitride (SiN) or silicon dioxide (Si) to the surface using chemical gas deposition (CVD). 〇)) 's thin layer (< 500A). This material was deposited at 96439.doc 200525794 and the conventional HMDS vaporization (coupling of the top primer provides excellent adhesion of the photoresist layer to the wafer surface. However, this' k layer, which causes additional problems, must then be removed By way of example, it has been found that the removal of materials with dry-type engraving techniques is generally very aggressive and can cause the destruction of fragile wafer layers. Other methods exist to promote photoresistance to wafers Adhesion, such as using oxygen electropolymerization to roughen the surface and add oxygen to the surface before coating the surface with a photoresist. Although this method increases the surface energy in I, a due to the intramolecular ^ ^ Φ ^ t ^ ^ ^ ® (low surface energy functional groups) restored its original low-energy water + when re-moved to the surface, which only produced-a short-lived effect [in addition, 'surface roughness remains not to a degree. In the use of amorphous In the case of Teflon Na, the oxygen system makes the surface of the breasts coarser and promotes adhesion enhancement, but allows photoresist solvents to adhere to Tefion AF®. In addition, it has been proposed to use interfacial activity mixed with photoresist materials Agent to help wet the surface. The method is complicated and the double-layer photoresist coating is required because the wetting by the first coating is usually still incomplete. Generally, 10-15% of the surfactant is required relative to the photoresist 'but the first coating is still used Only 80% of the coverage is produced. Finally, other materials have been used as interfacial adhesion promoters. The focus has been on 'and the use of photoresist developers has been described' to limit the resolution. An object of the invention is to provide a device such as a semiconductor device, a photonic device, a microfluidic device, an acoustic wave device, a stencil, or the like, which includes a material that promotes photoresistance to a low surface energy. 96439.doc 200525794 The enhanced adhesion or low-surface energy material of the adhesive to the enhanced interface material of a substrate. Another object of the present invention is to provide a device that includes a surface material that promotes enhanced adhesion The removal of the barrier layer and the surface layer after 4 does not damage the surface of the material below. Another object of the present invention is to provide a device including-promoting enhanced adhesion and allowing- The interface material of the photoresist layer of the low surface energy layer is coupled by using the method of Xiao Yixian. The other object of the present invention is to provide a method for manufacturing a device, which includes the following steps: providing a method for promoting photoresistance to a low level. Enhanced adhesion of surface energy material or enhanced adhesion interface material of low surface energy material to a substrate. [Summary of the Invention] These and other needs have been generally met by providing a device and a method of manufacturing the device, the The device includes a substrate, a low-surface energy material layer, and an amorphous carbon layer deposited on the substrate and adjacent to the low-surface energy material layer. A method of manufacturing the device includes the following steps: providing a substrate having a surface, A low surface energy material layer is deposited on the substrate, and an amorphous carbon layer is deposited on the substrate surface but adjacent to the low surface energy material layer. The amorphous carbon layer is formed using standard plasma enhanced chemical gas deposition technology (PECvD) or by money deposits. [Embodiment] In this description, according to different drawings illustrating the present invention, similar numbers are used to mark similar elements. In addition, a semiconductor device was described in the description of the preferred embodiment, but the disclosure still foresees the term, device, 96439.doc 200525794 dagger device, photonic device, microfluidic device, acoustic wave Device, embossed fork, or the like. Therefore, Fig. 1 illustrates, in a simplified sectional view, a first step of a method of manufacturing a device (i.e., a semiconductor device) according to the present invention. Illustrated in Figure 1 is a semiconductor device, generally referred to 10, which includes the provision of a substrate 12 as a first step. In this particular embodiment, the substrate 12 is described as being formed of a Shi Xi or silicon dioxide material. More specifically, the substrate 12 is described as being formed of Shi Xi. It should be understood from this that it is foreseen that the substrate 12 is made of a Group VIII material. It includes materials such as GaAs, InGaAs, InA1 As, or any similar material, or any other materials commonly used as semiconductor substrates, but not limited to silicon and stone-containing materials. Materials, certain metals and metal oxides. The substrate 12 has deposited a low surface energy material layer 14 on the upper surface 13. The low surface energy material layer 14 is typically formed of Teflon AF®, but is also disclosed as an alternative to amorphous or semi-crystalline fluoropolymers, parylene, polysiloxane-based materials such as D0w diphenylfluorene cyclobutene BCB), which includes a polysiloxane component (polydimethylsiloxane) into its structure) or the like. In this particular embodiment, the low surface energy material layer 14 is provided on the surface Η of the substrate 12 to provide the surface 13 with inherent characteristics unique to the low surface energy material, such as water repellency, inertness, low adhesion / high releasability ( low stick / high releasability), high resistance, and to protect the surface 12 from abrasion, contamination, or other foreign matter issues. It has been found that the low surface energy material layer 14 is generally difficult to wet, and as a result, nothing is stuck or coated thereon. This prevents the use of low surface energy materials in many potentially beneficial situations, such as low dielectric (10w_k) materials, non-stick photomask coatings, MEMS devices, microfluidics, for step flash compression Photolithography 96439.doc -10- 200525794 (SFIL) technology patterned layer or similar. To increase wettability and adhesion, an amorphous carbon layer 16 is deposited on the uppermost surface 15 of the low surface energy material layer 14. It has been revealed that the amorphous carbon layer 16 is formed of an amorphous carbon material deposited on the surface 15 of the low surface energy material layer 14 using a typical semiconductor deposition technique. More specifically, the amorphous carbon layer 16 is deposited on the surface 15 of the low-surface energy material layer µ using plasma enhanced chemical gas deposition (PECVD) or gold deposits. It should be understood that when plasma enhanced chemical gas deposition (pECVD) is used to deposit the amorphous carbon layer 16, it may contain other elements such as hydrogen, nitrogen, or oxygen. The amorphous carbon layer 16 provides enhanced adhesion between the substrate 12 and a photoresist (currently discussed). The carbon layer 16 is disclosed as being formed of a thin layer of amorphous carbon. In this preferred embodiment, the amorphous carbon layer 16 is deposited using standard PECvD technology well known in the industry or by sputtering to a thickness of less than 100 A and preferably 30 to 70 a. The deposition of this amorphous carbon layer 16 results in an improved adhesion durability of the subsequently deposited photoresist to the low surface energy material layer 14, which allows the low surface energy material 14 to be treated using conventional photoresist and etch-in processing techniques. See Figures 2 and 3 in the tea. Next, the wafers are stacked (generally labeled 丨 0) Ί organic photoresist stack 20. The organic photoresist stack 20 may be composed of one or more organic photoresist layers, which organic photoresist layers include materials that are sensitive to light and / or electron beams. As shown in FIG. 2, the organic photoresist stack “= becomes a standard single-layer photoresist, including the photoresist layer 22. As shown in FIG. 3, an organic photoresist stack 20 is formed as a multilayer photoresist, such as a standard double layer = Resistance, including photoresist layers 22 and 24. It should be understood that depending on the desired pattern, "form a photoresist stack 20 to include a positive photoresistor or -negative photoresist, and form a single photoresist stack with the shape 96439.doc 200525794 Or multilayer photoresist stacking has nothing to do. Do not "connect" the wafer stack 10 (more specifically, the photoresist stack 20) using a standard H method such as electron beam, light or the like, and then use it-suitable wet chemistry The developer does not show the image, and during the development process, the area% of the stack 20 is removed to form a pattern. Then, the fully developed wafer stack is etched in an oxygen plasma for a minute, and, ′, is exposed in the patterning step and is part of the non-Japanese reverse layer 16 provided by the subsequent etching step. Next, the stack_minute is etched in oxygen to remove a portion of the low surface energy material layer 14. Next, if necessary, wet the pile $ 10 times in a 10% iNH4OH solution, usually for a knife buckle. Prior to the subsequent steps (ie, etching, metallization or the like), wetting of the stack 10 in a NH4OH solution is provided to clean the exposed surface 13 of the substrate 12 for measuring adhesive strength and durability. The standard is a 10 minute soak in 1 + 0% ammonium hydroxide (NH4OH) aqueous solution at room temperature. In this infiltrated cell, the photoresist feature should not have any even minimal lift-offs or undercuts, usually smaller than submicron. The amorphous carbon layer 16 is typically deposited for about 15 seconds and it is easily removed by a low or zero bias oxygen plasma. As shown in FIG. 6, following the next desired step, the organic photoresist stack 20 and the amorphous carbon layer 16 are removed. This removal step can be performed by techniques including wet chemical dissolution or oxygen plasma ashing, or a combination thereof. As disclosed herein, a sample of a wafer patterned using a stone reverse layer and a single or double photoresist stack was developed for one minute and immersed in a 10% ammonium hydroxide solution for 10 minutes. A detailed examination of the patterned photoresist using a scanning electron 96439.doc -12- 200525794 sub-microscope (SEM) revealed that the photoresist was inseparable and its outline did not show any signs of delamination or undercutting. As a result, it was concluded that the inclusion of the amorphous carbon layer 16 produced the surface 15 of the low-surface energy material layer 14 which was very suitable for the organic photoresist stack 20 adhesion. This reveals that it is foreseen that the carbon layer 16 is formed of amorphous carbon deposited on the surface 15 of the low surface energy material layer 14 with a thickness of less than 200 a, but it should be understood that the layer 16 may have a range of 30a to 10%. , 〇〇〇a thickness. In the preferred embodiment, the carbon layer 16 is formed at a thickness between 30-70A. Two types of amorphous carbon suitable for use in making the carbon layer 16 are disclosed. More specifically, a carbon material (PLC) for a kind of polymer of the carbon layer 16 and a diamond-like carbon material (DLC) are disclosed. In a preferred embodiment, the polymer-like carbon material is described as being ~ 60% polymerized, containing an assessable amount of hydrogen, having a low density value of ~ 0.9 g / cc, and ~ 2.0 Gpa. Hardness value and optical constant data of 11 ~ ι · 7 and k 0 · 02 at 633 11111. Diamond-like carbon materials are described as ~ aggregated, containing appreciable amounts of other elements, such as nitrogen and hydrogen and may even contain oxygen, with a higher density value of ~ 0.9 g / cc, hardness of ~ 8.0 Gpa Value and optically constant data of η ~ 1.9 and k ~ 0.20 at 633 nm. Although specific carbon films that fall between the PLC and DLC specifications have not been tested, it is best to make them operate equally in this application. By changing the surface energy of the low surface energy material layer 14, the amorphous carbon layer 16 provides enhanced adhesion of the photoresist stack 20 to the surface 15 of the low surface energy material layer 14, making it possible to provide more Strong compatibility and at the same time repellent water or aqueous mixture. In an alternative embodiment, as shown in FIGS. 7 and 8, an amorphous carbon layer 16 is formed on the uppermost surface of the substrate 12, and a lower 96439.doc -13- is formed on the uppermost surface of the amorphous carbon layer 16. 200525794 Surface Energy Material Layer 14. It should be noted ‘all and the picture! Components that are similar are shown with similar reference numerals and a single quotation mark has been added to indicate different embodiments. More specifically, a device in which a low surface energy material 14 is required to be deposited on the substrate 12 'is shown in the second embodiment. In order to promote the adhesion of the low surface energy material 14 'to the substrate 12, an amorphous carbon layer 16 is deposited on and adjacent to the substrate 12 before the low surface energy material 14 is deposited. This type of application should be beneficial for patterned layers of low dielectric materials, non-stick photomask coatings, MEMS devices, microfluidics, and SFIL devices. As shown in FIGS. 7 and 8, a substrate 12 is provided and formed using materials similar to those disclosed for the substrate 12 in FIG. Next, an amorphous carbon layer 16 is deposited on the substrate 12 'and adjacent to the uppermost surface 13 of the substrate 12. The amorphous carbon layer i6 is not formed of a material similar to that disclosed for the amorphous carbon layer 16 in Figs. 1-6, and it provides an enhancement of the low surface energy material 14, on the substrate 12, Sticky. The low surface energy material layer 14 is formed of Teflon AF® in this particular embodiment, but it is foreseen that it may be formed of other low surface energy material layers as described with respect to FIGS.
在此特定實施例中，在裝置10,之製造過程中，使用 PECVD或如先前揭示之其他技術，在基板12’之表面13,上沈 積一小於100 A之非晶碳薄層。由此揭示應預見層ι6，通常形 成為小於200 A，但應理解層16,可具有一在30 A至1〇,〇〇〇 A 範圍内之厚度。 在非晶碳層16,頂部沈積或旋塗低表面能量材料層14,。將 非晶碳用作界面層，以提供低表面能量材料14,至基板12, 96439.doc -14- 200525794 之增強之黏著。 囚此，揭示了一種用於拇 製造方法。非曰炉> > 4 3 i層黏著之非晶碳層及其 π ^層之包括物提 材料表面的增強之黏著或、先ρ層至低表面能量 強之粦荖故 ·表s⑨量材料層至一基板的增 强之黏者。此增強之黏著特 寺f生為半導體裝置、光 、 微流體裝置、表面聲波穿w 衣置、壓印模板或其類似物提供了 經增進之製造，包括達成 圖案化該低表面能量材料之簡 易化及光阻層移除之簡便。 【圖式簡單說明】 圖1-6說明製造一根據本發明之半導體裝置之第一實施 例的步驟之截面圖，該半導體裝置包括一用於增進光阻至 低表面能量材料層之黏著的非晶碳層；及 圖7-8說明製造一根據本發明之半導體裝置之第二實施 例之步驟之截面圖，該半導體裝置包括一用於增進低表面 旎ΐ材料層至一基板之黏著的非晶碳層。 【主要元件符號說明】 10 裝置 101裝置 12 基板 12’基板 13 表面 1 31 表面 14 低表面能量材料層 14f 低表面能量材料層 96439.doc -15- 200525794 15 最上層 16 非晶碳層 16’ 非晶破層 20 光阻層 22 光阻層 24 光阻層 26 區域 96439.doc -16-In this particular embodiment, during the manufacturing process of the device 10, a thin layer of amorphous carbon less than 100 A is deposited on the surface 13 of the substrate 12 'using PECVD or other techniques as previously disclosed. This reveals that layer ι6 should be foreseen and usually forms less than 200 A, but it should be understood that layer 16 may have a thickness in the range of 30 A to 10,000 A. On top of the amorphous carbon layer 16, a layer 14 of low surface energy material is deposited or spin-coated. Amorphous carbon is used as the interface layer to provide enhanced adhesion of the low surface energy material 14 to the substrate 12, 96439.doc -14- 200525794. In view of this, a method for manufacturing a thumb is disclosed. Fei furnace > > 4 3 i-layer adhered amorphous carbon layer and its π ^ layer including enhanced adhesion on the surface of the material extraction material, or the first ρ layer to low surface energy is strong Reinforced adhesion from a material layer to a substrate. This enhanced adhesion provides an enhanced manufacturing process for semiconductor devices, light, microfluidic devices, surface acoustic wave wearers, embossed templates, or the like, including the ease of patterning the low surface energy materials. Easy to remove the photoresist and photoresist layer. [Brief Description of the Drawings] Figures 1-6 are cross-sectional views illustrating the steps of manufacturing a first embodiment of a semiconductor device according to the present invention. The semiconductor device includes a non-conductive material for improving the adhesion of a photoresist to a low surface energy material layer. A crystalline carbon layer; and FIGS. 7-8 are cross-sectional views illustrating steps for manufacturing a second embodiment of a semiconductor device according to the present invention, the semiconductor device including a non-conductive layer for promoting adhesion of a low-surface rhenium material layer to a substrate; Crystalline carbon layer. [Description of main component symbols] 10 device 101 device 12 substrate 12 'substrate 13 surface 1 31 surface 14 low surface energy material layer 14f low surface energy material layer 96439.doc -15- 200525794 15 top layer 16 amorphous carbon layer 16' non Crystal breaking layer 20 Photoresistive layer 22 Photoresistive layer 24 Photoresistive layer 26 Region 96439.doc -16-