TW200514741A - Storage device with charge trapping structure and methods - Google Patents
Storage device with charge trapping structure and methodsInfo
- Publication number
- TW200514741A TW200514741A TW093112642A TW93112642A TW200514741A TW 200514741 A TW200514741 A TW 200514741A TW 093112642 A TW093112642 A TW 093112642A TW 93112642 A TW93112642 A TW 93112642A TW 200514741 A TW200514741 A TW 200514741A
- Authority
- TW
- Taiwan
- Prior art keywords
- charge trapping
- trapping structure
- storage device
- semiconducting layer
- methods
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1409—Heads
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
- G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
- G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/689,940 US6984862B2 (en) | 2003-10-20 | 2003-10-20 | Storage device with charge trapping structure and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200514741A true TW200514741A (en) | 2005-05-01 |
TWI309635B TWI309635B (en) | 2009-05-11 |
Family
ID=34394525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093112642A TWI309635B (en) | 2003-10-20 | 2004-05-05 | Storage device with charge trapping structure and methods |
Country Status (5)
Country | Link |
---|---|
US (2) | US6984862B2 (zh) |
EP (1) | EP1526526B1 (zh) |
JP (1) | JP4350021B2 (zh) |
DE (1) | DE602004017560D1 (zh) |
TW (1) | TWI309635B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020138301A1 (en) * | 2001-03-22 | 2002-09-26 | Thanos Karras | Integration of a portal into an application service provider data archive and/or web based viewer |
US7233517B2 (en) * | 2002-10-15 | 2007-06-19 | Nanochip, Inc. | Atomic probes and media for high density data storage |
US7002820B2 (en) * | 2004-06-17 | 2006-02-21 | Hewlett-Packard Development Company, L.P. | Semiconductor storage device |
FR2880980B1 (fr) * | 2005-01-17 | 2007-03-16 | Commissariat Energie Atomique | Dispositif d'enregistrement de donnees comportant des micro-pointes dont l'ensemble des extremites libres forme une surface convexe et procede de fabrication |
US20070041237A1 (en) * | 2005-07-08 | 2007-02-22 | Nanochip, Inc. | Media for writing highly resolved domains |
US20070121477A1 (en) * | 2006-06-15 | 2007-05-31 | Nanochip, Inc. | Cantilever with control of vertical and lateral position of contact probe tip |
US20080074792A1 (en) * | 2006-09-21 | 2008-03-27 | Nanochip, Inc. | Control scheme for a memory device |
US20080074984A1 (en) * | 2006-09-21 | 2008-03-27 | Nanochip, Inc. | Architecture for a Memory Device |
US20090129246A1 (en) * | 2007-11-21 | 2009-05-21 | Nanochip, Inc. | Environmental management of a probe storage device |
US20090294028A1 (en) * | 2008-06-03 | 2009-12-03 | Nanochip, Inc. | Process for fabricating high density storage device with high-temperature media |
US20100039729A1 (en) * | 2008-08-14 | 2010-02-18 | Nanochip, Inc. | Package with integrated magnets for electromagnetically-actuated probe-storage device |
US20100039919A1 (en) * | 2008-08-15 | 2010-02-18 | Nanochip, Inc. | Cantilever Structure for Use in Seek-and-Scan Probe Storage |
US11205449B2 (en) * | 2013-03-18 | 2021-12-21 | Magnecomp Corporation | Multi-layer PZT microacuator with active PZT constraining layers for a DSA suspension |
US9716203B2 (en) * | 2013-09-12 | 2017-07-25 | The Texas A&M University System | Metal nanoparticles grown on an inner surface of open volume defects within a substrate |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165943A (en) * | 1980-05-26 | 1981-12-19 | Toshiba Corp | Signal recording system |
DE3775049D1 (de) * | 1987-05-08 | 1992-01-16 | Ibm | Loeschbare elektrooptische speicherplatte. |
US5216631A (en) | 1990-11-02 | 1993-06-01 | Sliwa Jr John W | Microvibratory memory device |
DE4340592C2 (de) * | 1993-11-29 | 2002-04-18 | Gold Star Electronics | Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeichers und einen nach diesem Verfahren hergestellten Halbleiterspeicher |
US5557596A (en) * | 1995-03-20 | 1996-09-17 | Gibson; Gary | Ultra-high density storage device |
US6122191A (en) * | 1996-05-01 | 2000-09-19 | Cypress Semiconductor Corporation | Semiconductor non-volatile device including embedded non-volatile elements |
US5835477A (en) | 1996-07-10 | 1998-11-10 | International Business Machines Corporation | Mass-storage applications of local probe arrays |
US6507552B2 (en) * | 2000-12-01 | 2003-01-14 | Hewlett-Packard Company | AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media |
EP1227496A1 (en) * | 2001-01-17 | 2002-07-31 | Cavendish Kinetics Limited | Non-volatile memory |
US6903969B2 (en) * | 2002-08-30 | 2005-06-07 | Micron Technology Inc. | One-device non-volatile random access memory cell |
-
2003
- 2003-10-20 US US10/689,940 patent/US6984862B2/en not_active Expired - Fee Related
-
2004
- 2004-05-05 TW TW093112642A patent/TWI309635B/zh active
- 2004-09-22 DE DE602004017560T patent/DE602004017560D1/de active Active
- 2004-09-22 EP EP04255775A patent/EP1526526B1/en not_active Expired - Fee Related
- 2004-10-19 JP JP2004303885A patent/JP4350021B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-20 US US11/255,458 patent/US7709882B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4350021B2 (ja) | 2009-10-21 |
TWI309635B (en) | 2009-05-11 |
EP1526526A2 (en) | 2005-04-27 |
EP1526526B1 (en) | 2008-11-05 |
EP1526526A3 (en) | 2006-05-17 |
US6984862B2 (en) | 2006-01-10 |
US20060086986A1 (en) | 2006-04-27 |
JP2005159315A (ja) | 2005-06-16 |
DE602004017560D1 (de) | 2008-12-18 |
US7709882B2 (en) | 2010-05-04 |
US20050082598A1 (en) | 2005-04-21 |
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