TW200514244A - A solid-state image sensor and a manufacturing method thereof - Google Patents
A solid-state image sensor and a manufacturing method thereofInfo
- Publication number
- TW200514244A TW200514244A TW093124543A TW93124543A TW200514244A TW 200514244 A TW200514244 A TW 200514244A TW 093124543 A TW093124543 A TW 093124543A TW 93124543 A TW93124543 A TW 93124543A TW 200514244 A TW200514244 A TW 200514244A
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- solid
- state image
- made out
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 abstract 1
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 abstract 1
- 229910000149 boron phosphate Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000049 pigment Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003307848A JP2005079344A (ja) | 2003-08-29 | 2003-08-29 | 固体撮像装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200514244A true TW200514244A (en) | 2005-04-16 |
| TWI251340B TWI251340B (en) | 2006-03-11 |
Family
ID=34214151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093124543A TWI251340B (en) | 2003-08-29 | 2004-08-16 | A solid-state image sensor and a manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050045805A1 (zh) |
| JP (1) | JP2005079344A (zh) |
| KR (1) | KR20050021969A (zh) |
| CN (1) | CN1591886A (zh) |
| TW (1) | TWI251340B (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4761505B2 (ja) * | 2005-03-01 | 2011-08-31 | キヤノン株式会社 | 撮像装置、ならびに撮像システム |
| JP2007180157A (ja) * | 2005-12-27 | 2007-07-12 | Fujifilm Corp | 固体撮像素子 |
| KR100937654B1 (ko) * | 2006-12-12 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
| JP2009158944A (ja) * | 2007-12-06 | 2009-07-16 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
| US8395686B2 (en) | 2007-12-06 | 2013-03-12 | Sony Corporation | Solid-state imaging device, method of manufacturing the same, and camera |
| JP5374916B2 (ja) * | 2008-04-23 | 2013-12-25 | ソニー株式会社 | 固体撮像素子及びその製造方法、カメラ |
| KR20100030865A (ko) * | 2008-09-11 | 2010-03-19 | 삼성전자주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| US8610815B2 (en) * | 2009-01-12 | 2013-12-17 | Aptina Imaging Corporation | Imaging device having microlens array adhered to wafer-level lens |
| JP2011109033A (ja) * | 2009-11-20 | 2011-06-02 | Sharp Corp | 層内レンズおよびその製造方法、カラーフィルタおよびその製造方法、固体撮像素子およびその製造方法、並びに電子情報機器 |
| JP4880794B1 (ja) * | 2011-04-22 | 2012-02-22 | パナソニック株式会社 | 固体撮像装置とその製造方法 |
| JP2013012506A (ja) * | 2011-06-28 | 2013-01-17 | Sony Corp | 固体撮像素子の製造方法、固体撮像素子、電子機器の製造方法、および電子機器。 |
| JP2014036092A (ja) * | 2012-08-08 | 2014-02-24 | Canon Inc | 光電変換装置 |
| JP2015115386A (ja) * | 2013-12-10 | 2015-06-22 | ソニー株式会社 | 固体撮像素子、電子機器、および固体撮像素子の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3405620B2 (ja) * | 1995-05-22 | 2003-05-12 | 松下電器産業株式会社 | 固体撮像装置 |
| US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
| JP2002196106A (ja) * | 2000-12-27 | 2002-07-10 | Seiko Epson Corp | マイクロレンズアレイ及びその製造方法並びに光学装置 |
-
2003
- 2003-08-29 JP JP2003307848A patent/JP2005079344A/ja not_active Withdrawn
-
2004
- 2004-08-16 TW TW093124543A patent/TWI251340B/zh active
- 2004-08-27 US US10/927,278 patent/US20050045805A1/en not_active Abandoned
- 2004-08-30 KR KR1020040068509A patent/KR20050021969A/ko active IP Right Grant
- 2004-08-30 CN CNA2004100748235A patent/CN1591886A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005079344A (ja) | 2005-03-24 |
| CN1591886A (zh) | 2005-03-09 |
| KR20050021969A (ko) | 2005-03-07 |
| TWI251340B (en) | 2006-03-11 |
| US20050045805A1 (en) | 2005-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7932546B2 (en) | Image sensor having microlenses and high photosensitivity | |
| US7505206B2 (en) | Microlens structure for improved CMOS image sensor sensitivity | |
| TW200514244A (en) | A solid-state image sensor and a manufacturing method thereof | |
| KR100790981B1 (ko) | 칼라필터, 칼라필터 어레이 및 그의 제조방법과 이미지센서 | |
| US6171883B1 (en) | Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof | |
| TWI252332B (en) | High efficiency microlens array | |
| CN100383978C (zh) | 用于形成图像传感器的方法 | |
| CN106098716B (zh) | 成像装置和电子设备 | |
| US20120267745A1 (en) | Solid-state imaging device and method for manufacturing the same | |
| US7736939B2 (en) | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor | |
| CN101075626B (zh) | 彩色传感器、彩色传感器的制造方法、传感器以及电子仪器 | |
| US20080131992A1 (en) | Image sensor having integrated infrared-filtering optical device and related method | |
| CN102130138A (zh) | 图像传感器及其形成方法 | |
| TW200618044A (en) | Photoreceptor and its manufacturing method, and photographic camera | |
| CN101677082A (zh) | Cmos图像传感器及其制造方法 | |
| CN108281435A (zh) | 一种图像传感器及其形成方法 | |
| CN109564925A (zh) | 具有集成光传感器的片上系统型相机以及制造片上系统型相机的方法 | |
| CN101202248A (zh) | 图像传感器及其制造方法 | |
| CN101834115A (zh) | 制造固态图像拾取装置的方法和固态图像拾取装置 | |
| KR100720461B1 (ko) | 이미지 센서 및 그의 제조방법 | |
| CN101667585A (zh) | 图像传感器及其制造方法 | |
| CN102569327B (zh) | 内置菲涅耳透镜的图像传感器及其制造方法 | |
| US10566362B2 (en) | Method for forming image sensor | |
| JP2017092302A (ja) | 固体撮像素子および固体撮像素子の製造方法 | |
| JP2003338613A (ja) | 固体撮像素子及びその製造方法 |