TW200513347A - Polishing body for CMP polishing, CMP polishing apparatus, CMP polishing method, and method for manufacturing semiconductor device - Google Patents

Polishing body for CMP polishing, CMP polishing apparatus, CMP polishing method, and method for manufacturing semiconductor device

Info

Publication number
TW200513347A
TW200513347A TW093114876A TW93114876A TW200513347A TW 200513347 A TW200513347 A TW 200513347A TW 093114876 A TW093114876 A TW 093114876A TW 93114876 A TW93114876 A TW 93114876A TW 200513347 A TW200513347 A TW 200513347A
Authority
TW
Taiwan
Prior art keywords
polishing
cmp polishing
thickness
cmp
wafer
Prior art date
Application number
TW093114876A
Other languages
Chinese (zh)
Inventor
Susumu Hoshino
Norio Yoshida
Yuko Kitade
Osamu Shimoda
Takeya Yabuki
Original Assignee
Nippon Kogaku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kogaku Kk filed Critical Nippon Kogaku Kk
Publication of TW200513347A publication Critical patent/TW200513347A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention is to provide a polishing body for CMP polishing which is preferably used in a CMP polishing method which enables to prevent excess polishing of the peripheral surface of a wafer. This polishing body for CMP polishing is composed of a polishing pad, a hard elastic member and a soft elastic member bonded together in this order, and the thickness of the soft elastic member is not more than a half of the thickness of the polishing pad. When the thickness of the foam polyurethane is equal to the thickness of the grinding pad IC1000 of 1.25mm, the grinding velocity of the area 3mm away from the wafer increases sharply such that the SiO2 disappears absolutely and cause the problem of Si exposure. However, if the thickness of the foam polyurethane is increased to 0.5mm, the grinding velocity of the area 3mm away from the wafer decreases; if the thickness of the foam polyurethane is thinner than 0.2mm, then the grinding velocity at wafer edge decreases more than that of the inner side. Even when the grinding velocity at wafer edge decreases, it will not cause problems for no pattern is form there.
TW093114876A 2003-05-26 2004-05-26 Polishing body for CMP polishing, CMP polishing apparatus, CMP polishing method, and method for manufacturing semiconductor device TW200513347A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003147834 2003-05-26
JP2003150285 2003-05-28

Publications (1)

Publication Number Publication Date
TW200513347A true TW200513347A (en) 2005-04-16

Family

ID=33478994

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114876A TW200513347A (en) 2003-05-26 2004-05-26 Polishing body for CMP polishing, CMP polishing apparatus, CMP polishing method, and method for manufacturing semiconductor device

Country Status (3)

Country Link
JP (1) JPWO2004105113A1 (en)
TW (1) TW200513347A (en)
WO (1) WO2004105113A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9844800B2 (en) * 2014-04-23 2017-12-19 Applied Materials, Inc. Systems, methods and apparatus for post-chemical mechanical planarization substrate cleaning
CN108562470B (en) * 2018-04-09 2020-04-28 大连理工大学 Preparation method of tungsten-nickel-iron alloy metallographic phase

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0465868B1 (en) * 1990-06-29 1996-10-02 National Semiconductor Corporation Controlled compliance polishing pad
JP2891083B2 (en) * 1993-12-14 1999-05-17 信越半導体株式会社 Sheet-shaped polishing member and wafer polishing device
JP3509188B2 (en) * 1994-06-22 2004-03-22 ソニー株式会社 Method for producing fine particles for chemical mechanical polishing and polishing method using the same

Also Published As

Publication number Publication date
WO2004105113A1 (en) 2004-12-02
JPWO2004105113A1 (en) 2006-07-20

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