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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW92125674ApriorityCriticalpatent/TWI231545B/en
Publication of TW200512837ApublicationCriticalpatent/TW200512837A/en
Application grantedgrantedCritical
Publication of TWI231545BpublicationCriticalpatent/TWI231545B/en
An electrical chemical plating (hereafter ECP) method is employed to deposit Cu layer on a wafer without Cu residues left on the bevel of wafer. The ECP method includes: A Cu plate is electrically connected to the anode of DC source; A first contact ring is electrically connected to the anode of DC source and the outer contact ring contracts the bevel of wafer; A second contact ring is electrically connected to the cathode of DC source; The wafer, the first and second contact ring are put inside the ECP chamber.
TW92125674A2003-09-172003-09-17ECP method and apparatus thereof
TWI231545B
(en)
Electrolytic copper plating method, electrolytic copper plating-use phosphorus-containing copper anode and semiconductor wafer with little particles deposition plated by using them