TW200511674A - Manufacturing method of oxide-confined semiconductor laser - Google Patents

Manufacturing method of oxide-confined semiconductor laser

Info

Publication number
TW200511674A
TW200511674A TW093138837A TW93138837A TW200511674A TW 200511674 A TW200511674 A TW 200511674A TW 093138837 A TW093138837 A TW 093138837A TW 93138837 A TW93138837 A TW 93138837A TW 200511674 A TW200511674 A TW 200511674A
Authority
TW
Taiwan
Prior art keywords
oxide
wire
platform
fabrication
bonding
Prior art date
Application number
TW093138837A
Other languages
Chinese (zh)
Other versions
TWI274449B (en
Inventor
Bo-Lin Li
Jun-Han Wu
Jin-Shan Pan
hong-qing Lai
Original Assignee
Truelight Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Truelight Corp filed Critical Truelight Corp
Priority to TW093138837A priority Critical patent/TWI274449B/en
Publication of TW200511674A publication Critical patent/TW200511674A/en
Priority to US11/302,280 priority patent/US7416930B2/en
Priority to JP2005362128A priority patent/JP4852305B2/en
Application granted granted Critical
Publication of TWI274449B publication Critical patent/TWI274449B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention relates to a manufacturing method of oxide-confined semiconductor laser, which is a manufacturing process of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to fabricate the light-emitting active area and the wire-bonding area with dual platform simultaneously on a semiconductor material structure directly; use metal passivation material, conductive metal material, and dielectric material which can be etched, associate with the etching process, oxide-confinement technology and coating technology for fabrication, including the fabrication of light-emitting active area and wire-bonding area on semiconductor material, oxide layer, dielectric layer, passivation layer and metal layer, so as to complete the fabrication of oxide-confined VCSEL. The platform of light-emitting active area and platform of the wire-bonding area can be designed independently, and the wire-bonding platform is fabricated on a semiconductor structure, whose capacitance can be adjusted by ion implantation. At the same time, the strength of wire-bonding is higher, and the dielectric layer filled outside the dual-platform can further reduce the capacitance of the connected metal, which is easily planarized and advantageous for the fabrication of metal layer.
TW093138837A 2004-12-15 2004-12-15 Manufacturing method of oxide-confined semiconductor laser TWI274449B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW093138837A TWI274449B (en) 2004-12-15 2004-12-15 Manufacturing method of oxide-confined semiconductor laser
US11/302,280 US7416930B2 (en) 2004-12-15 2005-12-14 Method for producing an oxide confined semiconductor laser
JP2005362128A JP4852305B2 (en) 2004-12-15 2005-12-15 Manufacturing method of oxide confined vertical cavity surface emitting semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093138837A TWI274449B (en) 2004-12-15 2004-12-15 Manufacturing method of oxide-confined semiconductor laser

Publications (2)

Publication Number Publication Date
TW200511674A true TW200511674A (en) 2005-03-16
TWI274449B TWI274449B (en) 2007-02-21

Family

ID=36583783

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093138837A TWI274449B (en) 2004-12-15 2004-12-15 Manufacturing method of oxide-confined semiconductor laser

Country Status (3)

Country Link
US (1) US7416930B2 (en)
JP (1) JP4852305B2 (en)
TW (1) TWI274449B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5087874B2 (en) * 2006-07-28 2012-12-05 富士ゼロックス株式会社 Surface emitting semiconductor laser and manufacturing method thereof
JP5321886B2 (en) * 2009-02-06 2013-10-23 ソニー株式会社 Semiconductor element
JP6183045B2 (en) * 2013-08-09 2017-08-23 ソニー株式会社 Light emitting device and manufacturing method thereof
CN113708216A (en) * 2021-07-26 2021-11-26 威科赛乐微电子股份有限公司 Preparation method of vertical resonant cavity surface emitting laser
CN114188816B (en) * 2021-11-16 2024-04-12 深圳市嘉敏利光电有限公司 Flip VCSEL structure of high refractive index contrast DBR and process method thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2539416B2 (en) * 1987-03-25 1996-10-02 株式会社日立製作所 Semiconductor laser device
JPH07115242A (en) * 1993-08-23 1995-05-02 Mitsubishi Electric Corp Device and fabrication for semiconductor laser
JPH07131117A (en) * 1993-09-07 1995-05-19 Mitsubishi Electric Corp Semiconductor laser element and its manufacture
JPH0983067A (en) * 1995-09-19 1997-03-28 Olympus Optical Co Ltd Semiconductor laser and fabrication thereof
US6160834A (en) 1998-11-14 2000-12-12 Cielo Communications, Inc. Vertical cavity surface emitting lasers with consistent slope efficiencies
JP2001168462A (en) * 1999-12-10 2001-06-22 Hittsu Kenkyusho:Kk Semiconductor multilayer film reflecting mirror and semiconductor light-emitting element using the same
US6658040B1 (en) 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6570905B1 (en) 2000-11-02 2003-05-27 U-L-M Photonics Gmbh Vertical cavity surface emitting laser with reduced parasitic capacitance
JP2002270959A (en) * 2001-03-12 2002-09-20 Ricoh Co Ltd Surface emission semiconductor laser
US6687268B2 (en) * 2001-03-26 2004-02-03 Seiko Epson Corporation Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode
US6645848B2 (en) 2001-06-01 2003-11-11 Emcore Corporation Method of improving the fabrication of etched semiconductor devices
US6816526B2 (en) 2001-12-28 2004-11-09 Finisar Corporation Gain guide implant in oxide vertical cavity surface emitting laser
JP3966067B2 (en) * 2002-04-26 2007-08-29 富士ゼロックス株式会社 Surface emitting semiconductor laser device and method for manufacturing the same
JP2004031633A (en) * 2002-06-26 2004-01-29 Ricoh Co Ltd Surface emitting semiconductor laser element and light transmission system
JP2004214332A (en) * 2002-12-27 2004-07-29 Victor Co Of Japan Ltd Method of manufacturing surface emitting laser
TW565975B (en) 2002-12-27 2003-12-11 Ind Tech Res Inst Oxide confined type vertical cavity surface emitting laser device and the manufacturing method thereof
TW580785B (en) 2003-01-23 2004-03-21 Nat Univ Chung Hsing Vertical-cavity surface emitting laser (VCSEL) and a method for producing the same
JP4561042B2 (en) * 2003-04-11 2010-10-13 富士ゼロックス株式会社 Surface emitting semiconductor laser and manufacturing method thereof

Also Published As

Publication number Publication date
TWI274449B (en) 2007-02-21
US7416930B2 (en) 2008-08-26
US20060126696A1 (en) 2006-06-15
JP2006173626A (en) 2006-06-29
JP4852305B2 (en) 2012-01-11

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