TW200510934A - Radiation-sensitive resin composition and method for forming pattern using the composition - Google Patents

Radiation-sensitive resin composition and method for forming pattern using the composition

Info

Publication number
TW200510934A
TW200510934A TW093117021A TW93117021A TW200510934A TW 200510934 A TW200510934 A TW 200510934A TW 093117021 A TW093117021 A TW 093117021A TW 93117021 A TW93117021 A TW 93117021A TW 200510934 A TW200510934 A TW 200510934A
Authority
TW
Taiwan
Prior art keywords
resin composition
alkali
weight
parts
radiation
Prior art date
Application number
TW093117021A
Other languages
Chinese (zh)
Inventor
Takeo Fujino
Yuka Soma
Nobunori Abe
Original Assignee
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Publication of TW200510934A publication Critical patent/TW200510934A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Abstract

A radiation-sensitive resin composition containing (A) 100 parts by weight of alkali-soluble resin, (B) 1 to 40 parts by weight of quinone diazide compound, (C) 20 to 2000 parts by weight of inorganic fine particles and optionally (D) an amine compound having 80 to 300 DEG C of boiling point at ordinary pressure, the alkali-soluble resin having 0.1 to 40% by mole of basic group per total number by moles of repeating structural unit of the alkali-soluble resin. Method of forming patterns using the resin composition is also disclosed, the method comprising disposing a photoresist layer of the resin composition on a substrate, selectively exposing to an active light and developing. A resist pattern which is excellent in anti-oxygen plasma property, heat-resisting property, anti-dryetching property, sensitivity, resolution and pealability and has reduced surface roughness is provided.
TW093117021A 2003-06-20 2004-06-14 Radiation-sensitive resin composition and method for forming pattern using the composition TW200510934A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003176198 2003-06-20

Publications (1)

Publication Number Publication Date
TW200510934A true TW200510934A (en) 2005-03-16

Family

ID=33534888

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117021A TW200510934A (en) 2003-06-20 2004-06-14 Radiation-sensitive resin composition and method for forming pattern using the composition

Country Status (3)

Country Link
JP (1) JPWO2004114020A1 (en)
TW (1) TW200510934A (en)
WO (1) WO2004114020A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007025012A (en) * 2005-07-13 2007-02-01 Nippon Zeon Co Ltd Resin composition
CN101606103A (en) 2007-02-09 2009-12-16 索尼化学&信息部件株式会社 Photosensitive polyimide resin composition
WO2008123049A1 (en) * 2007-03-30 2008-10-16 Jsr Corporation Method for film formation, resin composition for use in the method, structure having insulating film, process for producing the structure, and electronic component
JP2009133924A (en) * 2007-11-28 2009-06-18 Jsr Corp Method for film formation and positive photosensitive resin composition for use in the same
JP5739325B2 (en) * 2008-04-23 2015-06-24 ブルーワー サイエンス アイ エヌシー． Photosensitive hard mask for microlithography
JP5246259B2 (en) * 2008-06-11 2013-07-24 Ｊｓｒ株式会社 Structure having insulating film and method for producing the same, positive photosensitive resin composition, and electronic component
KR20110045418A (en) * 2009-10-27 2011-05-04 삼성전자주식회사 Photoresist composition and method of manufacturing a display substrate using the photoresist composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0553314A (en) * 1991-08-22 1993-03-05 Sumitomo Chem Co Ltd Positive type resist composition
JPH08319307A (en) * 1995-05-29 1996-12-03 Nippon Kayaku Co Ltd Resin composition, resist ink composition and its cured material
JP3633179B2 (en) * 1997-01-27 2005-03-30 Ｊｓｒ株式会社 Positive photoresist composition
JP4022312B2 (en) * 1998-05-08 2007-12-19 株式会社Ｋｒｉ Resist composition and pattern forming method
JP3974718B2 (en) * 1998-11-09 2007-09-12 Ａｚエレクトロニックマテリアルズ株式会社 Radiation sensitive resin composition
JP3909552B2 (en) * 2000-07-27 2007-04-25 Ｊｓｒ株式会社 Radiation-sensitive resin composition and insulating film for organic EL device

Also Published As

Publication number Publication date
JPWO2004114020A1 (en) 2006-08-03
WO2004114020A1 (en) 2004-12-29

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