TW200509214A - Immersion fluid for immersion lithography, and method of performing immersion lithography - Google Patents
Immersion fluid for immersion lithography, and method of performing immersion lithographyInfo
- Publication number
- TW200509214A TW200509214A TW093124633A TW93124633A TW200509214A TW 200509214 A TW200509214 A TW 200509214A TW 093124633 A TW093124633 A TW 093124633A TW 93124633 A TW93124633 A TW 93124633A TW 200509214 A TW200509214 A TW 200509214A
- Authority
- TW
- Taiwan
- Prior art keywords
- immersion
- immersion fluid
- fluid
- immersion lithography
- lithography
- Prior art date
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
An immersion lithographic system comprises an optical surface, an immersion fluid with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure having a topmost photoresist layer wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure having a topmost photoresist layer comprising the steps of: introducing an immersion fluid into a space between an optical surface and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450nm through the immersion fluid and onto the photoresist.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49819503P | 2003-08-25 | 2003-08-25 | |
| US10/803,712 US7700267B2 (en) | 2003-08-11 | 2004-03-18 | Immersion fluid for immersion lithography, and method of performing immersion lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200509214A true TW200509214A (en) | 2005-03-01 |
| TWI243409B TWI243409B (en) | 2005-11-11 |
Family
ID=34594584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93124633A TWI243409B (en) | 2003-08-25 | 2004-08-17 | Immersion fluid for immersion lithography, and method of performing immersion lithography |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN100535753C (en) |
| SG (1) | SG109582A1 (en) |
| TW (1) | TWI243409B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996145B (en) * | 2005-12-31 | 2010-08-25 | 上海集成电路研发中心有限公司 | Method for reducing water pollution of optical elements in immersion type photoengraving technology |
| US7903232B2 (en) * | 2006-04-12 | 2011-03-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| TWI347741B (en) * | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN2746425Y (en) * | 2003-08-25 | 2005-12-14 | 台湾积体电路制造股份有限公司 | Infiltration photoetching system |
-
2004
- 2004-08-17 TW TW93124633A patent/TWI243409B/en active
- 2004-08-23 SG SG200404744A patent/SG109582A1/en unknown
- 2004-08-25 CN CNB2004100568482A patent/CN100535753C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI243409B (en) | 2005-11-11 |
| SG109582A1 (en) | 2005-03-30 |
| CN1655061A (en) | 2005-08-17 |
| CN100535753C (en) | 2009-09-02 |
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