TW200509195A - Plasma processing method and apparatus - Google Patents

Plasma processing method and apparatus

Info

Publication number
TW200509195A
TW200509195A TW093123736A TW93123736A TW200509195A TW 200509195 A TW200509195 A TW 200509195A TW 093123736 A TW093123736 A TW 093123736A TW 93123736 A TW93123736 A TW 93123736A TW 200509195 A TW200509195 A TW 200509195A
Authority
TW
Taiwan
Prior art keywords
electrodes
plasma processing
electrode circuit
frequency
secondary coil
Prior art date
Application number
TW093123736A
Other languages
Chinese (zh)
Inventor
Hiromi Komiya
Makoto Kouzuma
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003290623A external-priority patent/JP2005063760A/en
Priority claimed from JP2004080168A external-priority patent/JP4532948B2/en
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200509195A publication Critical patent/TW200509195A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Abstract

In the plasma processing of the present invention, the frequency range of power supplied to electrodes is set such that stable discharge and high output efficiency can be achieved. In the plasma processing apparatus of the present invention, there are a secondary coil 22b of a transformer 22 that boosts a power supply voltage; and an electrode circuit 1 comprising a pair of electrodes 11,12 opposed to each other. There is also a solid dielectric 13 on the opposing surface of at least one of the electrodes 11,12. The electrode circuit 1 constitutes an LC series resonant circuit including a leakage inductance of the secondary coil and a capacitance of the electrodes. The supply frequency to the electrode circuit 1 is set between the resonant frequency while not discharging and the resonant frequency when the spacing 10p between the electrodes can be regarded as a conductor.
TW093123736A 2003-08-08 2004-08-06 Plasma processing method and apparatus TW200509195A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003290623A JP2005063760A (en) 2003-08-08 2003-08-08 Plasma treatment method and treatment device
JP2004080168A JP4532948B2 (en) 2004-03-19 2004-03-19 Plasma processing method

Publications (1)

Publication Number Publication Date
TW200509195A true TW200509195A (en) 2005-03-01

Family

ID=34137944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093123736A TW200509195A (en) 2003-08-08 2004-08-06 Plasma processing method and apparatus

Country Status (3)

Country Link
KR (1) KR20060064047A (en)
TW (1) TW200509195A (en)
WO (1) WO2005015963A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101819840B1 (en) * 2013-10-04 2018-01-17 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 Power-supply device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
JP3122618B2 (en) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 Plasma processing equipment
JP3840821B2 (en) * 1998-11-30 2006-11-01 株式会社日立製作所 Plasma processing equipment
JP3719352B2 (en) * 1999-07-23 2005-11-24 三菱電機株式会社 Power supply device for plasma generation and method for manufacturing the same
JP4178775B2 (en) * 2001-08-31 2008-11-12 株式会社日立国際電気 Plasma reactor
DE10154229B4 (en) * 2001-11-07 2004-08-05 Applied Films Gmbh & Co. Kg Device for the regulation of a plasma impedance
JP3977114B2 (en) * 2002-03-25 2007-09-19 株式会社ルネサステクノロジ Plasma processing equipment
JP4123945B2 (en) * 2003-01-27 2008-07-23 三菱電機株式会社 Plasma processing apparatus and method for measuring high frequency characteristics of plasma processing apparatus

Also Published As

Publication number Publication date
KR20060064047A (en) 2006-06-12
WO2005015963A1 (en) 2005-02-17

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