TW200508409A - Traps for particle entrapment in deposition chambers - Google Patents

Traps for particle entrapment in deposition chambers

Info

Publication number
TW200508409A
TW200508409A TW093114538A TW93114538A TW200508409A TW 200508409 A TW200508409 A TW 200508409A TW 093114538 A TW093114538 A TW 093114538A TW 93114538 A TW93114538 A TW 93114538A TW 200508409 A TW200508409 A TW 200508409A
Authority
TW
Taiwan
Prior art keywords
projections
particle
traps
deposition chambers
forming
Prior art date
Application number
TW093114538A
Other languages
English (en)
Chinese (zh)
Inventor
Jae-Yeon Kim
Terry J Phelan
John D Mize
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200508409A publication Critical patent/TW200508409A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
TW093114538A 2003-06-11 2004-05-21 Traps for particle entrapment in deposition chambers TW200508409A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47781003P 2003-06-11 2003-06-11
US49803603P 2003-08-26 2003-08-26

Publications (1)

Publication Number Publication Date
TW200508409A true TW200508409A (en) 2005-03-01

Family

ID=33555476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114538A TW200508409A (en) 2003-06-11 2004-05-21 Traps for particle entrapment in deposition chambers

Country Status (4)

Country Link
EP (1) EP1642328A1 (ko)
KR (1) KR20060023115A (ko)
TW (1) TW200508409A (ko)
WO (1) WO2005001918A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110891713A (zh) * 2017-07-04 2020-03-17 清洁设备集团公司 处理室组件和形成表面纹理的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374648B2 (en) * 2004-06-28 2008-05-20 Honeywell International Inc. Single piece coil support assemblies, coil constructions and methods of assembling coil constructions
WO2007084114A2 (en) 2005-01-12 2007-07-26 New York University System and method for processing nanowires with holographic optical tweezers
EP3254305B1 (en) * 2015-02-06 2023-05-10 Applied Materials, Inc. 3d printed chamber components configured for lower film stress and lower operating temperature
US11569069B2 (en) 2015-02-06 2023-01-31 Applied Materials, Inc. 3D printed chamber components configured for lower film stress and lower operating temperature
JP2018523013A (ja) * 2015-07-23 2018-08-16 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 改良されたスパッタリングコイル製品及び製造方法
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
US11739411B2 (en) 2019-11-04 2023-08-29 Applied Materials, Inc. Lattice coat surface enhancement for chamber components

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474649A (en) * 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US5942041A (en) * 1996-09-16 1999-08-24 Mosel-Vitelic, Inc. Non-sticking semi-conductor wafer clamp and method of making same
US6277194B1 (en) * 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110891713A (zh) * 2017-07-04 2020-03-17 清洁设备集团公司 处理室组件和形成表面纹理的方法

Also Published As

Publication number Publication date
KR20060023115A (ko) 2006-03-13
EP1642328A1 (en) 2006-04-05
WO2005001918A1 (en) 2005-01-06

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