TW200501467A - Magnetoresistive random access memory structure and method for manufacturing the same - Google Patents

Magnetoresistive random access memory structure and method for manufacturing the same

Info

Publication number
TW200501467A
TW200501467A TW092117707A TW92117707A TW200501467A TW 200501467 A TW200501467 A TW 200501467A TW 092117707 A TW092117707 A TW 092117707A TW 92117707 A TW92117707 A TW 92117707A TW 200501467 A TW200501467 A TW 200501467A
Authority
TW
Taiwan
Prior art keywords
random access
access memory
magnetoresistive random
manufacturing
same
Prior art date
Application number
TW092117707A
Other languages
Chinese (zh)
Other versions
TWI225716B (en
Inventor
Wen-Chin Lin
Denny D Teng
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW92117707A priority Critical patent/TWI225716B/en
Application granted granted Critical
Publication of TWI225716B publication Critical patent/TWI225716B/en
Publication of TW200501467A publication Critical patent/TW200501467A/en

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  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A magnetoresistive random access memory (MRAM) cell structure and a method for manufacturing the same are disclosed. In the method, two conductive lines used to write a data into a selected magnetoresistive random access memory cell are deposed on an upper side of a magnetic tunnel junction (MTJ) device of the selected magnetoresistive random access memory cell. In addition, the two conductive lines can be formed by using a deposition method, a photolithography method, and an etching method, and a chemical mechanical polishing (CMP) method is not implemented.
TW92117707A 2003-06-27 2003-06-27 Magnetoresistive random access memory structure and method for manufacturing the same TWI225716B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW92117707A TWI225716B (en) 2003-06-27 2003-06-27 Magnetoresistive random access memory structure and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92117707A TWI225716B (en) 2003-06-27 2003-06-27 Magnetoresistive random access memory structure and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TWI225716B TWI225716B (en) 2004-12-21
TW200501467A true TW200501467A (en) 2005-01-01

Family

ID=34588298

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92117707A TWI225716B (en) 2003-06-27 2003-06-27 Magnetoresistive random access memory structure and method for manufacturing the same

Country Status (1)

Country Link
TW (1) TWI225716B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7800933B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US8008700B2 (en) 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7618850B2 (en) 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7660181B2 (en) 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7800934B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US8149614B2 (en) 2010-03-31 2012-04-03 Nanya Technology Corp. Magnetoresistive random access memory element and fabrication method thereof

Also Published As

Publication number Publication date
TWI225716B (en) 2004-12-21

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