TW200501467A - Magnetoresistive random access memory structure and method for manufacturing the same - Google Patents
Magnetoresistive random access memory structure and method for manufacturing the sameInfo
- Publication number
- TW200501467A TW200501467A TW092117707A TW92117707A TW200501467A TW 200501467 A TW200501467 A TW 200501467A TW 092117707 A TW092117707 A TW 092117707A TW 92117707 A TW92117707 A TW 92117707A TW 200501467 A TW200501467 A TW 200501467A
- Authority
- TW
- Taiwan
- Prior art keywords
- random access
- access memory
- magnetoresistive random
- manufacturing
- same
- Prior art date
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- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
A magnetoresistive random access memory (MRAM) cell structure and a method for manufacturing the same are disclosed. In the method, two conductive lines used to write a data into a selected magnetoresistive random access memory cell are deposed on an upper side of a magnetic tunnel junction (MTJ) device of the selected magnetoresistive random access memory cell. In addition, the two conductive lines can be formed by using a deposition method, a photolithography method, and an etching method, and a chemical mechanical polishing (CMP) method is not implemented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92117707A TWI225716B (en) | 2003-06-27 | 2003-06-27 | Magnetoresistive random access memory structure and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW92117707A TWI225716B (en) | 2003-06-27 | 2003-06-27 | Magnetoresistive random access memory structure and method for manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI225716B TWI225716B (en) | 2004-12-21 |
TW200501467A true TW200501467A (en) | 2005-01-01 |
Family
ID=34588298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW92117707A TWI225716B (en) | 2003-06-27 | 2003-06-27 | Magnetoresistive random access memory structure and method for manufacturing the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI225716B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7800933B2 (en) | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance |
US8008700B2 (en) | 2002-12-19 | 2011-08-30 | Sandisk 3D Llc | Non-volatile memory cell with embedded antifuse |
US7618850B2 (en) | 2002-12-19 | 2009-11-17 | Sandisk 3D Llc | Method of making a diode read/write memory cell in a programmed state |
US7660181B2 (en) | 2002-12-19 | 2010-02-09 | Sandisk 3D Llc | Method of making non-volatile memory cell with embedded antifuse |
US7800932B2 (en) | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Memory cell comprising switchable semiconductor memory element with trimmable resistance |
US7800934B2 (en) | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Programming methods to increase window for reverse write 3D cell |
US8149614B2 (en) | 2010-03-31 | 2012-04-03 | Nanya Technology Corp. | Magnetoresistive random access memory element and fabrication method thereof |
-
2003
- 2003-06-27 TW TW92117707A patent/TWI225716B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI225716B (en) | 2004-12-21 |
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