200426586 五、發明說明（1) 【發明所屬之技術領域】 本發明為提供一種快閃記1 音I#古、古 丨、UU篮阿逮大區塊之資料寫 方法，尤指可令寫入至快閃記_冑φ t j U菔肀之貧料，如發生轡f 之資料不能寫滿整頁時，亦能將Μ p 次 月b时欠更之貧料繼續寫入之方 法。 【先前技術】 按，目前由於近年來消眷市媼m ^ f 1U Λ Μ η ρ τ Λ ρ 賈帀％對反及型式快閃記憶體 2二“ MEM〇R Υ)的需求量愈來 ?大’在產此增加以及生產技術的不斷進步下，而有新型 的反及型式快閃記憶體的出現，如士 τ广a a J 現如大區塊快閃記憶體與Μ L C快閃記憶體...等等。在技術進步了，直快閃記愫 體的單價越來越便J：，但該快閃記憶體之資料存取，受^ 母：頁：允許寫入一次’以及只能按順序寫入資料之限制 ’導致負料的寫入速度大幅減慢。 一般傳統在反及型式大區塊快閃記憶體中，進行資料 存取之資料寫入方法： 、 < 一請參閱第一圖所示，係處理器從該快閃記憶體中事先 :疋之備用區塊裡’任選一個區塊作為暫存區塊丄1，再 :該快閃記憶體之資料區塊丄2中未被變更之資料從此資 ，區塊1 2之首頁’依照頁數之順序， 地寫入暫 存區塊11; 出該資料區塊1 2中被 此變更資料按照頁數順 睛再參閱第二圖所示，若判斷 憂更之資料足以寫滿整頁時，則將 序，一頁一頁地寫入暫存區塊丄工200426586 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention provides a method for writing data in a flash block of 1 tone I # ancient, ancient 丨, UU basket, especially for writing to The flash material _ 胄 φ tj U 菔 肀 is a poor material. If the data of 辔 f cannot fill the entire page, it can also continue to write the poor material which is less in the next month b. [Previous technology] According to the current market demand in recent years, 媪 m ^ f 1U Λ Μ η ρ τ Λ ρ Jia 帀% demand for anti-type flash memory 2 2 "" MEM0R Υ) is increasing? With the increase in production and the continuous improvement of production technology, the emergence of new anti-type flash memory, such as τ τ aa J is now like large block flash memory and ML LC flash memory ... and so on. As technology advances, the unit price of flash memory is getting more and more convenient: but the data access of this flash memory is subject to ^ Mother: Page: Allow write once 'and only press The restriction of sequential data writing 'causes the writing speed of negative material to be greatly slowed down. Generally, the traditional data writing method for data access in anti-type large block flash memory: < As shown in the figure, the processor selects one of the flash memory's spare blocks from the flash memory in advance as a temporary storage block 丄 1, and then: the flash data block 快 2 The information that has not been changed in this way is from this data. The first page of block 12 is written to the temporary storage block 11 in the order of the number of pages. ; The data changed in this data block 12 is shown in the second page according to the number of pages. If it is judged that the data of anxiety is enough to fill the whole page, the sequence will be written page by page. Temporary block masonry
200426586 五、發明說明（2) 請再參閱第三圖所 ^ 變更之資料不足寫滿整 ^右判斷出該資料區塊1 2中被 塊1 2之資料丄3補滿、時，則將不滿之部份用原資料區 請再參閱第四圖所^並寫入暫存區塊1 1 ; 之資料以下未被變更之=，再將該資料區塊1 2中被變更 地寫入暫存區塊丄丄，^料，依照頁數之順序，一頁一頁 ** 2抹去成備用區塊，並頁尾為止，嗣再將原資料區塊1 區塊1 2。 暫存區塊1 1來取代原有之資料 。而上述習用資料窝入古、土 能寫滿整頁時，僅能搬:^方法，在發生變更之資料不 法能將變更之資料繼續寫：貧；區塊之資料進行補滿，無 對於運用該快閃記憶體之早=，寫入資料之速度變慢， 成該電子裝置整體運算（=(如電腦）而言，將造 【發明内容】 二处）之速度，大幅減低。 故，發明人有鑑於前述習用反 體之/資料寫入方法，&成寫入資料之速塊快閃記憶 依其從事電子元件之製造經驗和技術累；交】之缺失，乃 失悉心研究各種解決的方法， 不斷沾寺針對上述缺 改良後’終於開發設計出本發明之；：：：：研究、實驗與 高速大區塊之資料寫入方法的王，之快閃記憶體 ,j發明之主要目的，係於處資 隐體中如發生變更之資料不能寫滿整頁睡.、’、入5亥快閃記 憶體之一備用區塊裡找一個區塊作為特殊區，可從快閃記 資料寫入特殊區塊中暫存，並將下筆接浐品塊，將此變更 _ ‘ π此變更資料之資200426586 V. Description of the invention (2) Please refer to the third picture again. ^ The changed data is not full and full ^ It is judged that the data in block 12 is filled with the data of block 1 2 2 3, it will be dissatisfied. For part of the original data area, please refer to the fourth figure again and write it into the temporary storage area 1 1; if the data is not changed below, write the data area 12 into the temporary storage area. Block 丄 丄, ^ material, in accordance with the order of the number of pages, page by page ** 2 is erased into a spare block, and until the end of the page, 嗣 again the original data block 1 block 1 2. Temporary block 11 is used to replace the original data. However, when the above-mentioned custom data is in the ancient times and the soil can be filled with a full page, it can only be moved: ^ method, when the changed data is illegal, it can continue to write the changed data: poor; the block data is filled up, and there is no use for As soon as the flash memory =, the speed of writing data becomes slower, and the speed of the overall operation of the electronic device (= (such as a computer) will create [invention content] two places), greatly reducing the speed. Therefore, the inventor has taken into account the aforementioned conventional anti-data / data writing method, and the flash memory for writing data into the data is exhausted due to his experience in manufacturing electronic components and technology; the lack of careful research Various solutions to the problem have been continuously improved after the Zhan Temple has finally developed the design of the present invention; :::: King of research, experiment and high-speed large block data writing method, flash memory, j invention The main purpose is that if the changed information in the hidden asset cannot be filled with a full page of sleep., ', Enter one of the spare blocks in the flash memory to find a block as a special area. The flash data is written into a special block for temporary storage, and the next copy is connected to this block. This change _ 'π
第6頁 五、發明說明（3) 繼續寫入特殊區 " =中暫存之資料搬移至該頁寫滿，兩再將特 枓，即使發生變更之j因此寫入該快閃記憶體中之 貧料繼續寫入， 七科不能寫滿整頁時，亦能 、 【實施方式】 達成加快寫入資料速度之目的Γ之 為便 眚逢i 4。 置特徵及其功效Tf對ί發明之目的、形狀、構造裝 配合圖示，$ έ 更進—步之認識與瞭解，兹舉垂, 砰細說明如下。 鉍舉貝轭例 ，係在ί ^ ί:Ϊ:口記憶體高速大區塊之資料寫入方法 貝科不能寫滿整]口己〔體中’如發生變更之 個區塊作為特殃/ :，可攸快閃記憶體之備用區塊裡找_ ，並將下塊，將此變更資料寫入特殊區以存 ’直到能將該C f:之資料’繼續寫入特殊區塊中 ’如此，寫入节2區塊’並將特殊區塊抹去成備用區塊 料不能寫滿整；：閃記憶體中之資料’即使發生變更之資 力°快寫入資料守，亦能將變更之資料繼續寫入，以達成 、W之速度使用。 承發明之— — 法係處理器…4敢佳實施例中，請參閱第五圖所示，該方 選-個區塊：f 2閃記憶體中事先設定之備用區塊裡，任 區塊5 2中去马暫存區塊5 1 ，再將該快閃記憶體之資料 照頁數之順序被&更之資料從此資料區塊5 2之首頁，依 、，一頁一頁地寫入暫存區塊51中。 五、發明說明（4) 請再參閲 變更之資料足 序，一頁一頁 請再參閱 變更之資料不 塊作為特殊區 殊區塊5 3中 請再參閱 疋否接續此變 殊區塊5 3裡 塊5 3中暫存 後，一起寫入 用區塊；若不 此重複此動作 中暫存之資料 起寫入暫存區 第六圖 以寫滿 地寫入 第七圖 足寫滿 塊5 3 暫存。 第八、 更資料 的資料 之資料 暫存區 是，貝1J ，直到 讀出並 塊5 1 若判斷出該資料區塊52中被 暫存區塊5!。貝料照頁數順 =味若判斷出該資料區塊5 2中被 ，：丄:則從備用區塊裡任選一個區 、’亥不足寫滿整頁之資料寫入特 九、十 ，若是 是否可 讀出並 塊5 1 將資料 能將該 與該筆 ，並將 圖所示 ，則繼 寫滿整 與該筆 ’並將 繼續寫 頁寫滿 欲寫入 特殊區 ，判斷 續判斷 頁，若 欲寫入 特殊區 入特殊 時，再 之資料 塊5 3 下筆寫入之資料 該筆資料加上特 是’則將特殊區 之資料匯整補滿 塊5 3抹去成備 區塊5 3中，如 將特殊區塊5 3 匯整補滿後，一 抹去成備用區塊 再者’睛再參閱第十一圖 斗卜 資料皆接續此變更資料，則重= 下筆欲寫入之 -頁地寫入暫存區塊5 1，至d:將資料-頁 區塊5 2抹去成備用區㉟，並由將原資料 之資料區塊5 2，再重複上、f : Ϊ存塊5 1來取代原有 心5办 冉直複上述之步驟的動作。 是接：此二：第：t圖所示’若判斷出下筆寫入之資料不 接、，此變更貨料時1將特殊區塊5 3之資料讀Π 第8頁 整補滿後， 備用區塊， 被變更之資 塊5 1 ，至 用區塊，並 再重複上述 中之資料， 變更之資料 已，惟本發 技藝者在本 涵蓋在以下 大區塊之資 的，故本發 之申請要件 以保障發明 請不吝來函 200426586 五、發明說明（5) 部份5 4用資料區塊5 2之資料匯 嗣再將ίΠ1，並將特殊區塊5 3抹去成 料，依照頁數之順序，一頁一 J = 頁尾為止，最後再將原資料區塊^ : 由暫存區塊51來取代原有之資料區=備 之步驟的動作。 如此，本發明之方法於寫入該快閃記憶體 即，發生變更之資料不能寫滿整頁時，亦^將 繼續寫入，以達成加快寫入資料之速度。 、 以上所述，僅為本發明最佳具體f施例而 明之構造、特徵並不侷限於此，任何熟悉該項 發明領域内，可輕易思及之變化或修飾，皆可 本案之專利範圍。 綜上所述’本發明上述之快閃記憶體高速 料寫入方法於使用時，確實能達到其功效及目 明誠為一實用性優異之發明，誠符合發明專利 ，爰依法提出申請，盼 審委早曰賜准本案， 人之辛苦發明’倘若 鈞局審委有任何稽疑， 指示，發明人定當竭力配合，實感德便。5. Description of the invention on page 6 (3) Continue to write to the special area " = temporarily stored data is moved to the page to be full, and the special feature is doubled, even if the changed j is written into the flash memory The poor materials continue to be written. When the seven subjects can not fill the entire page, they can also. [Implementation method] To achieve the purpose of accelerating the speed of writing data, Γ will meet i 4. Features and effects of Tf on the purpose, shape, and structure of the invention. With the illustration, $ ard goes a step further—knowledge and understanding of the step, hereby give a detailed description, as follows. Bismuth is an example of yoke, which is based on ^ ^: Ϊ: How to write data in high-speed large blocks of memory. Beco cannot write the whole]. :, You can find _ in the spare block of flash memory, and write the next block to write the changed data to the special area to save 'until the data of C: can continue to be written into the special block' In this way, write the section 2 block and erase the special block into a spare block. The data cannot be filled; the data in the flash memory 'can be changed even if the capacity of the change is quickly written to the data guard. The data continues to be written and used at the speed of W. The invention of the invention-the processor of the legal system ... 4 In the embodiment of the brave, please refer to the fifth figure, this option is a block: f 2 flash memory in the pre-set spare block, any block In 5 2 go to the temporary storage block 5 1, and then flash the data of the flash memory according to the order of the number of pages to be updated from the first page of this data block 5 2. Into the temporary storage block 51. V. Description of the invention (4) Please refer to the changed information for the full sequence. Please refer to the changed information page by page. The block is not a special zone 5. Please refer to 3 whether to continue this variable zone 5 Block 3 in block 5 will be written into the block together after 3; if you do not repeat this action, the data temporarily stored in the block will be written into the temporary storage area. 5 3 Temporary. Eighth, the data temporary storage area of the data is 1J, until it is read out and block 5 1 If it is determined that the data block 52 is temporarily stored in block 5 !. The number of pages according to the material is in the order = Wei. If it is judged that the data block 52 is being used,: 丄: Then select an area from the spare block. If it can be read and the block 5 1 will be able to match the data with the pen, and will be shown in the figure, then continue to write the whole and the pen 'and continue to write the page to be written to the special area, and judge to continue to judge the page If you want to write the special area and enter the special area, the data block 5 3 is written next. The data plus the special ', then the data in the special area is aggregated to fill the block 5 3 and erase the prepared block 5 In 3, if the special block 5 3 is aggregated and replenished, it will be erased into a spare block, and then you can refer to the eleventh figure in the figure. The data is continued from this change. Write the temporary storage block 51 to d: erase the data-page block 5 2 into the spare area 由, and then rewrite the data block 5 2 of the original data, and then repeat the above and f: save the block 5 1 to replace the original mind 5 to do the above steps. Yes connection: these two: page t: If it is determined that the data written next time is not connected, when changing the goods 1 read the data of the special block 5 3 Π after the page is fully filled, reserve Block, the changed block 51, the block to be used, and the above information is repeated, the changed data is already, but the author of this technology covers the following large blocks, so this issue For application requirements to protect the invention, please write to us 200426586 V. Description of the invention (5) Part 54: Use the data in the data block 5 2 to collect the data, and then erase the special block 5 3 into the material. In sequence, one page at a time J = the end of the page, and finally the original data block ^: The temporary data block 51 is used to replace the original data area = backup. In this way, the method of the present invention will continue to write when the flash memory is written, that is, when the changed data cannot fill the entire page, so as to speed up the writing of data. As mentioned above, the structures and features described only for the best and specific embodiments of the present invention are not limited to this. Any changes or modifications that can be easily considered in the field of the invention are within the scope of this patent. In summary, the above-mentioned flash memory high-speed writing method of the present invention can indeed achieve its efficacy and purpose when it is used. It is an invention with excellent practicability, which is in line with the invention patent. The trial committee said that this case had been granted. The hard work of the people has invented 'If there is any suspicion and instructions from the jury of the Bureau, the inventor must cooperate with all efforts and feel good.
200426586 圖式簡單說明 【圖式簡單說明 第一圖 係為習用資料寫入方法之方塊示意圖（一）。 第二圖 係為習用資料寫入方法之方塊示意圖（二）。 第三圖 係為習用資料寫入方法之方塊示意圖（三）。 第四圖 係為習用資料寫入方法之方塊示意圖（四）。 第五圖 係為本發明之資料寫入方法的方塊示意圖（一） 〇 第六圖 係為本發明之資料寫入方法的方塊示意圖（二） 〇 第七圖 係為本發明之資料寫入方法的方塊示意圖（三） 〇 第八圖 係為本發明之資料寫入方法的方塊示意圖（四） 〇 第九圖 係為本發明之資料寫入方法的方塊示意圖（五） 〇 第十圖 係為本發明之資料寫入方法的方塊示意圖（六） 〇 第十一圖 係為本發明之資料寫入方法的方塊示意圖（七 )° 第十二圖 係為本發明之資料寫入方法的方塊示意圖（八 元件符號說明200426586 Schematic description [Schematic description of the first picture] It is a block diagram (1) of the writing method of conventional data. The second figure is a block diagram (two) of the conventional data writing method. The third figure is a block diagram (three) of the writing method of conventional data. The fourth figure is a block diagram (four) of the conventional data writing method. The fifth diagram is a block diagram of the data writing method of the present invention (1). The sixth diagram is the block diagram of the data writing method of the present invention (b). The seventh diagram is the data writing method of the present invention. Block diagram (3). Figure 8 is a block diagram of the data writing method of the present invention (IV). Figure 9 is a block diagram of the data writing method of the present invention (5). Figure 10 is Block diagram (6) of the data writing method of the present invention 〇 Figure 11 is a block diagram (7) of the data writing method of the present invention ° Figure 12 is a block diagram of the data writing method of the present invention (Eight component symbols
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