TW200425430A - Flip chip package and method of forming - Google Patents

Flip chip package and method of forming Download PDF

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Publication number
TW200425430A
TW200425430A TW92112946A TW92112946A TW200425430A TW 200425430 A TW200425430 A TW 200425430A TW 92112946 A TW92112946 A TW 92112946A TW 92112946 A TW92112946 A TW 92112946A TW 200425430 A TW200425430 A TW 200425430A
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TW
Taiwan
Prior art keywords
substrate
wafer
cavity
flip
metal shell
Prior art date
Application number
TW92112946A
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Chinese (zh)
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TWI234855B (en
Inventor
Hong-Yuan Huang
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Advanced Semiconductor Eng
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Priority to TW92112946A priority Critical patent/TWI234855B/en
Publication of TW200425430A publication Critical patent/TW200425430A/en
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Publication of TWI234855B publication Critical patent/TWI234855B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A flip chip package is provided. The flip chip package disclosed in the invention includes a substrate, a die, a metal shell and a dielectric liquid. The substrate has an upper surface and a lower surface. The die has an active surface and a rear surface. The active surface of the die is attached to the upper surface of the substrate by bumps, and the die is electrically connected to the substrate. The metal shell has a cavity. The metal shell is adhered to the substrate and an opening of the cavity faces the upper surface of the substrate. The die is hold inside the cavity of the metal shell, and an opening of the cavity is sealed by the substrate. The dielectric liquid is filled in the cavity of the metal shell and in contact with part of the upper surface of the substrate, the rear surface of the die and the side surfaces of the die. The dielectric liquid circulates in the metal shell while the heat transfer phase change of the dielectric liquid happens.

Description

200425430 五、發明說明(l) 【發明所屬之技術領域】 本發明是有關於一籀狀株 法,且特別是有關私種封衣件Package )及其製造方 r f 1 . u 有關於一種以介電液為散埶媒介之霜曰穴 (flip chip )封裝侏爲甘制也+ ~狀…炼”之覆晶式 7我仵及其製造方法。 【先前技術】 在科技日新月 電子產品,已成為 者電子產品邁向輕 也相對地開發出許 晶式封裝件。為了 設計將是重要的一 異的世代,利用積 現代人曰常生活中 薄短小之設計的潮 多高密度之半導體 維持覆晶式封裝件 環。 體電路元件所組成的 不可或缺的工具。隨 流’半導體封裝技術 封裝的形式,例如覆 的良好運作,其散熱200425430 V. Description of the invention (l) [Technical field to which the invention belongs] The present invention relates to a hoe-shaped plant method, and in particular, to a private-type wrapper package) and its manufacturer rf 1. U relates to a medium The electro-hydraulic is a flip chip of the loose medium (flip chip), the package is made of +7, and the method of flip-chip type 7 is a method and its manufacturing method. [Previous technology] In the science and technology of the new moon electronics, Has become a relatively lightweight electronic product and developed a crystal-like package. In order to design a different generation, it is important to use modern and high-density semiconductors in the daily life of high-density semiconductors. Flip-chip package ring. An indispensable tool for the body circuit components. With the flow of the semiconductor packaging technology packaging, such as the good operation of the cover, its heat dissipation

凊參照第1圖,其繪示乃傳統之覆晶式封裝件的剖面 圖。在第1圖中,覆晶式封裝件i 〇 〇包括基板i 〇 2、晶片 〇4、散熱片106、支撐物112及數個錫球114。其中,基板凊 Refer to FIG. 1, which shows a cross-sectional view of a conventional flip-chip package. In FIG. 1, the flip-chip package i 〇 〇 includes a substrate i 〇 2, a wafer 〇 4, a heat sink 106, a support 112, and a plurality of solder balls 114. Among them, the substrate

上〇2具有相對之一基板上表面1〇2a及一基板下表面1〇21), 而晶片1 04具有相對之一晶片主動表面j 〇4a及一晶片背面 l〇4b。晶片1 04係以晶片主動表面1〇4a覆晶接合於基板上 表面102a ’並電性連接至基板1〇2。錫球114係配置於基板 下表面102b上,用以供封裝件1〇〇與外界電路電性連接。 另外,支撐物1 1 2係為環形結構,其環繞固定於晶片 :04之侧面外之部分的基板上表面1 〇 2a上,用以撐高散熱 片106,使得散熱片106與晶片背面i〇4b導熱性連接。當 然,散熱片1 06可以藉由一黏著劑黏貼於晶片背面1 〇4b及The upper surface 02 has an upper surface of the substrate 102a and the lower surface 1021 of the substrate, and the wafer 104 has an opposite active surface of the wafer 104a and a back surface 104b of the wafer. The wafer 104 is bonded to the upper surface 102a 'of the substrate with the active surface 104a of the wafer and is electrically connected to the substrate 102. The solder balls 114 are arranged on the lower surface 102b of the substrate for the package 100 to be electrically connected to external circuits. In addition, the support 1 1 2 is a ring structure, which is fixed around the substrate upper surface 1 02a outside the side surface of the wafer: 04 to support the heat sink 106 so that the heat sink 106 and the back of the wafer i. 4b Thermally conductive connection. Of course, the heat sink 106 can be attached to the back of the chip 104b with an adhesive and

TW 325F(日月光).ptd 第6頁 200425430TW 325F (Sun and Moonlight) .ptd Page 6 200425430

五、發明說明(2) 支撐部112之上表而μ ^ ^ 衣面上。散熱 听產生的熱量逸散至外界中 良好運作。 片1 0 6之作用在於將晶片i 〇 4 以維持封覆晶式裝件1 0 0的 需要〉主意的县 告 良時,散熱片106及曰田片背熱面片/〇6與晶片背面1〇4b接觸不 晶片所產生的= =間隙,導致 外界中,大大地降低4埶;;有效地經由散熱片106逸散至 運作其鉅。 .......’影響覆晶式封裝件1 0 0的 【發明内容】 有鑑於此,本蘇明沾g 件及其製造方*,i利用不是在;供—種覆晶式封裝 熱傳相變化來逸散Γ片:Πί,數之介電液的 轨内之牴严Ή:: 產的熱量至外界,並以-金屬 7V又円之循Ϊ衣通路作為介雪、、衣 局;電液之熱傳相變化之循環流動,使 ί于本發明之覆晶式封裝件 .,^ f件了从達到良好的散熱效果及運作 性能。 根據本發明的目的,提 括基板、晶片、金屬殼及介 上表面及一基板下表面,晶 及一晶片背面。晶片係以晶 表面,並電性連接至基板。 凹穴之開口面向基板上表面 片,且基板係封住凹穴之開 凹穴卡,並與部分之基板上 出一種覆晶式封裝件,至少包 電液。基板具有相對之一基板 片具有相對之一晶片主動表面 片主動表面覆晶接合於基板上 金屬殼具有凹穴,金屬殼係以 與基板黏接,凹穴係納入該晶 口。介電液係填充於金屬殼之 表面、晶片背面及晶片之側面V. Description of the invention (2) The upper surface of the support portion 112 and the upper surface of the surface. Heat dissipation The heat generated by the hearing is dissipated to the outside world and works well. The function of the sheet 106 is to maintain the wafer i 〇4 to maintain the need to cover the crystal package 100. When the idea of the county is good, the heat sink 106 and the wafer sheet are hot back sheet / 〇6 and the back of the wafer. The 10 = b gap generated by contact with the wafer does not cause a significant decrease of 4 外界 in the outside world; it is effectively dissipated through the heat sink 106 to operate its giant. ....... 'Affects [Fundamental Content of Chip-on-Package Package 1 0 0] In view of this, Ben Suming and its manufacturer *, i use is not in place; for a kind of chip-on-package The heat transfer phase changes to dissipate the Γ sheet: Πί, the number of dielectric fluids in the rails is strict :: The heat generated by the outside to the outside, and -Metal 7V in turn through the clothing path as the clothing, clothing The circulation flow of the heat transfer phase of the electro-hydraulic changes makes the flip-chip package of the present invention achieve a good heat dissipation effect and operating performance. According to the purpose of the present invention, a substrate, a wafer, a metal shell, an upper surface and a lower surface of a substrate, and a crystal and a back surface of a wafer are included. The chip has a crystal surface and is electrically connected to the substrate. The opening of the cavity faces the upper surface sheet of the substrate, and the substrate is an opening cavity card that seals the cavity, and a flip-chip package is formed with a part of the substrate, at least an electro-hydraulic package. The substrate has one opposite substrate. The wafer has one opposite active surface of the wafer. The active surface of the wafer is bonded to the substrate. The metal shell has a cavity. The metal shell is bonded to the substrate. The cavity is incorporated into the crystal port. The dielectric liquid is filled on the surface of the metal shell, the back of the wafer and the side of the wafer

200425430 五、發明說明(3) 接觸,介電液係於金屬殼中 根據本發明的再一目的 造方法。首先,提供一基板 面及一基板下表面。接著, 表面及一晶片背面之晶片, 接合於基板上表面,使得晶 供一翻轉後之金屬殼,金屬 朝上。接著,填充一介電液 之基板及晶片與翻轉後之金 封裝件’晶片係被納入於凹 α。接著,翻正倒立之覆晶 之基板上表面、晶片背面及 金屬殼中為熱傳相變化之循 根據本發明的另一目的 括基板、晶片、金屬殼及介 上表面及一基板下表面,晶 及一晶片背面,晶片係以晶 表面,並電性連接至基板。 以凹穴的開口面向基板上表 晶片’且基板係封住凹穴的 扳、數個側板及一中空管, 以形成凹穴,並與基板黏接 相對之兩側板,並分隔凹穴 及數個直立通道,傾斜上部 為熱傳相變化之循環流動。 ’提出一種覆晶式封裝件的製 ’基板具有相對之一基板上表 提供一具有相對之一晶片主動 並將晶片以晶片主動表面覆晶 片與基板電性連接。然後,& 殼具有一凹穴:,凹穴之開口係 於凹穴中。然後’固定翻轉後 屬殼’以形成一倒立之覆晶式 穴中,基板係封住凹穴之開 式封裝件’使得介電液與部分 晶片之側面接觸’介電液係於 環流動。 ' ’提出一種覆晶式封裳件,包 電液。基板具有相對之—基寺反 片具有相對之一晶片主動i面 片主動表面覆晶接合於基板上 金屬殼具有一凹穴,金屬殼係 面與基板黏接’使得凹穴納入 開口。金屬殼包括一傾斜頂 此些側板係均與傾斜頂板連接 。中空管係貫穿此些側板中之 為一傾斜上部通道、一容置室 通道係位於傾斜頂板及中空管200425430 V. Description of the invention (3) Contact, the dielectric fluid is in a metal shell. A method according to still another object of the present invention. First, a substrate surface and a substrate lower surface are provided. Next, the surface and a wafer on the back of the wafer are bonded to the upper surface of the substrate, so that the crystal is provided with a metal shell after the flip, with the metal facing up. Next, the substrate and wafer filled with a dielectric liquid and the gold package 'wafer after the flip are incorporated into the recess α. Then, the upper surface of the flip-chip substrate, the back surface of the wafer, and the metal shell are inverted for heat transfer phase change. According to another object of the present invention, the substrate, the wafer, the metal shell, the upper surface and the lower surface of the substrate The back of a wafer and a wafer. The wafer is on the surface of the wafer and is electrically connected to the substrate. The opening of the cavity faces the surface wafer on the substrate, and the substrate is a plate that seals the cavity, several side plates, and a hollow tube to form a cavity, and is bonded to the opposite side plates of the substrate, and separates the cavity and There are several upright channels, and the inclined upper part is the cyclic flow of heat transfer phase change. ‘Propose a flip-chip package manufacturing method’ The substrate has an opposite substrate on the surface. Provide a wafer with an opposite substrate active and electrically connect the wafer to the substrate with the active surface of the wafer. The & shell then has a cavity: the opening of the cavity is tied into the cavity. Then "fix the flip shell" to form an inverted flip-chip cavity, and the substrate is an open package that seals the cavity so that the dielectric liquid is in contact with part of the side of the wafer. The dielectric liquid flows in a ring. '' Propose a flip-chip closure, including electro-hydraulic. The substrate has the opposite-the Jisi film has the opposite one. The active surface of the wafer is flip-chip bonded to the substrate. The metal shell has a cavity, and the metal shell system is bonded to the substrate 'so that the cavity is incorporated into the opening. The metal shell includes a slanted roof. These side panels are connected to the slanted roof. The hollow tube system runs through these side plates as an inclined upper channel and an accommodation chamber. The channel system is located on the inclined top plate and the hollow tube.

200425430 五、發明說明(4) 之間。容置室係位於中空管、此些側板及基板上表面之 曰1 ’並用以容納晶片。此些直立通道係位於部分之側板及 . 中空管之間,用以連通傾斜上部通道及容置室。其中,傾 斜上部通道、容置室、此些直立通道係形成一循環通路。 个電液係填充於金屬殼之凹穴中,並與部分之基板上表 面、晶片背面及晶片之側面接觸,介電液係可於此循環通 路作熱傳相變化之循環流動。 為讓本發明之上述目的、特徵、和優點能更明顯易 董’下文特舉一較佳實施例,並配合所附圖式,作詳細説· 明如下: 【實施方式】 實施例一 請參照第2圖,其繪示乃依本發明之實施例一之覆晶 式封裝件(flip chip package)的剖面圖。在第2圖中, 覆晶式封裝件20 0至少包括基板2 02、晶片2 04、數個錫球 214、金屬殼230及介電液240。基板202具有相對之基板上 表面2 0 2a、基板下表面2〇2b及數個基板側面2〇2c,基板侧 面202c係連接基板上表面2〇2a及基板不表面2〇2b。晶片 義 2 04具有相對之晶片主動表面2〇4a、晶片背面2〇4b及數個 晶片側面204 c,晶片側面20 4c係連接晶片主動表面2 04a及 f片背面204b。其中,晶片2 04係以晶片主動表面2 〇4a覆 晶接合於基板上表面2〇2a,並電性連接至基板2〇2。錫球 2:14係配置於基板下表面2〇21)上,用以供覆晶式封裝件2〇()200425430 V. Description of Invention (4). The accommodating chamber is located at 1 'on the upper surface of the hollow tube, these side plates, and the substrate, and is used to accommodate the wafer. These upright channels are located between the side plates of the part and the. Hollow tubes, and are used to communicate with the inclined upper channels and the accommodation chamber. Among them, the inclined upper passage, the accommodation chamber, and these upright passages form a circulation passage. Each electro-hydraulic system is filled in the cavity of the metal shell, and is in contact with a part of the surface on the substrate, the back of the wafer, and the side of the wafer. The dielectric fluid can circulate in this circulation path for heat transfer phase change. In order to make the above-mentioned objects, features, and advantages of the present invention more obvious, a preferred embodiment is given below, and in accordance with the accompanying drawings, the detailed description and explanation are as follows: [Embodiment] Please refer to the first embodiment FIG. 2 is a cross-sectional view of a flip chip package according to the first embodiment of the present invention. In FIG. 2, the flip-chip package 200 includes at least a substrate 202, a wafer 204, a plurality of solder balls 214, a metal shell 230, and a dielectric liquid 240. The substrate 202 has a substrate upper surface 202a, a substrate lower surface 202b, and a plurality of substrate side surfaces 202c. The substrate side surface 202c connects the substrate upper surface 202a and the substrate non-surface 202b. The wafer Y2 04 has the opposite active surface of the wafer 204a, the back surface of the wafer 204b, and several wafer side surfaces 204c. The wafer side 204c is connected to the wafer active surface 204a and the f-back surface 204b. Among them, the wafer 204 is bonded to the upper surface of the substrate 202a with the wafer active surface 204a and is electrically connected to the substrate 202. The solder ball 2:14 is arranged on the lower surface of the substrate (2021) for the chip-on-chip package 20 ()

200425430 五、發明說明(5) 舆外界電路電性連接。 金屬殼2 3 0具有傾斜頂板232、數個側板2 34及中空管 236 ’此些側板2 34係與傾斜頂板232連接以形成一凹穴 238 °凹穴23 8的開口係與傾斜頂板2 32相對,且中空管236 (系貫穿此些側板2 3 4之相對之兩側板,如第3圖所示。其 中’第3圖繪示乃第2圖之金屬殼的立體圖,而中空管236 之截面例如是方形,且中空管236之貫通孔237係可與外界 相通,使得外界空氣可以流通於貫通孔2 3 7中。需要注意200425430 V. Description of the invention (5) Electrical connection of the external circuit. The metal shell 2 3 0 has an inclined top plate 232, several side plates 2 34, and a hollow tube 236. These side plates 2 34 are connected to the inclined top plate 232 to form a cavity 238 ° the cavity 23 8 opening system and the inclined top plate 2 32 is opposite, and the hollow tube 236 (is the two opposite sides of these side plates 2 3 4, as shown in Figure 3. Among them, 'Figure 3 shows a perspective view of the metal shell of Figure 2, and the hollow The cross section of the tube 236 is, for example, square, and the through hole 237 of the hollow tube 236 can communicate with the outside world, so that outside air can circulate in the through hole 2 37. It should be noted that

的是’只要沿著yz平面進行第3圖之金屬殼23 0的剖面動 作’再由X之反方向看過去,即可呈現第2圖之金屬殼2 30 的面貌。 在第2圖及第3圖中,中空管236係可分隔凹穴238為傾 斜上部通道242、容置室244及數個直立通道246。傾斜上It is “as long as the cross-sectional movement of the metal shell 23 0 in FIG. 3 is performed along the yz plane” and viewed from the opposite direction of X, the appearance of the metal shell 2 30 in FIG. 2 can be presented. In Figs. 2 and 3, the hollow tube 236 is a partitionable cavity 238, which is an inclined upper passage 242, an accommodation chamber 244, and a plurality of upright passages 246. Tilt up

4通道2 4 2係位於傾斜頂板2 3 2及中空管2 3 6之間,容置室 」44係位於中空管236及凹穴2 38的開口之間,直立通道246 係位於部分之側板2 34及中空管2 3 6之間,用以連通傾斜上 邛通道242及容置室244。其中,傾斜上部通道242、容置 室244、直立通道246係形成一循環通路。由於基板202之 基板上表面202a的面積小於或等於金屬殼230之凹穴238的 開口大小’此些側板234將對應地與此些基板側面2〇2c黏 接’使得金屬殼23 0係以凹穴238的開口朝向基板上表面 :〇2a之方式與基板2〇2黏接。因此,基板2〇2及晶片2〇4係 被納入於容置室244中,且基板2〇2係封住凹穴2 38的開 其中此些侧板234可以對應地藉由防水性黏著劑與The 4 channel 2 4 2 is located between the inclined roof 2 3 2 and the hollow tube 2 3 6. The accommodating chamber 44 is located between the hollow tube 236 and the opening of the cavity 2 38. The upright channel 246 is located in part. The side plate 2 34 and the hollow tube 2 3 6 are used to communicate with the inclined upper channel 242 and the accommodation chamber 244. Among them, the inclined upper passage 242, the accommodation chamber 244, and the upright passage 246 form a circulation passage. Since the area of the upper surface 202a of the substrate 202 is smaller than or equal to the opening size of the recesses 238 of the metal shell 230, 'these side plates 234 will correspondingly adhere to the side surfaces 202c of these substrates', so that the metal shell 230 is recessed. The opening of the cavity 238 faces the upper surface of the substrate: 〇2a and is adhered to the substrate 202. Therefore, the substrate 200 and the wafer 204 are included in the accommodating chamber 244, and the substrate 200 is sealed to the recess 2 38. The side plates 234 can be correspondingly protected by a waterproof adhesive. versus

TW ]25F(曰月光).ptd 07Q 第10頁 200425430 玉、發明說明(6) =些基板侧面2G2c黏接,而防水性黏著劑例如是防水性樹 八^電液240係填充於容置室244中,介電液—係與部 :之ίΪ上表面2〇2a、晶片背面2〇4b及晶片側面2〇4c接 獨,;I電液240係於金屬殼2 30令以傾斜上部通道242、容 ί二2:!·、直立通道246所形成之循環通路作熱傳相變化之 循壞〜動。此時,介電液24 0之液面係高於晶片背面。介 :液24 0之特性在於不導電’可以避免封〇〇 生短路現象》 當晶片204的溫度高於介電液24〇的溫度時,部分之介 電液24 0將吸收晶片202所產生的熱量而 夜蒸氣。因此可以帶走晶片202所產生的熱量,而降低晶 片2 04的溫度。當介電液蒸氣經由直立通道246上升到傾斜 上部通道242中並碰觸到傾斜頂板23 2及中空管2 36時,由 ,傾斜頂板2 32外及貫通孔2 37中之空氣的溫度比介電液蒗 乳的溫度還低,部分之介電液蒸氣將釋出熱量給外界空 氣,並凝結成介電液。由於傾斜上部通道242傾斜的關 係,所凝結之介電液將因重力關係而順著傾斜上部通道 142及直立通道246流回容置室244中,完成介電液24〇之熱 ί相變~化的循環。所以,介電液24〇係可於傾斜上部通道 乙42、谷置室244、直立通道246所形成之循環通路作埶傳 在介電液240的熱傳相變化的循環下,由於介電液的 熱傳效果尚於傳統之散熱片i 〇 6的熱傳效果,使得晶片2 〇 4TW] 25F (Yueguang) .ptd 07Q Page 10 200425430 Jade and invention description (6) = 2G2c bonding on the side of some substrates, and the waterproof adhesive is, for example, a waterproof tree. In 244, the dielectric fluid-system and part: the upper surface 202a, the back surface 204b, and the side surface 204c of the wafer are connected; the electro-hydraulic 240 is connected to the metal shell 2 30 to tilt the upper channel 242. , Rong Er 2: 2: ·, the circulation path formed by the upright channel 246 is used to change the phase of the heat transfer phase ~ moving. At this time, the liquid level of the dielectric liquid 240 is higher than the back surface of the wafer. Dielectric: The characteristic of liquid 240 is that it is non-conductive, which can avoid the phenomenon of short circuit. When the temperature of wafer 204 is higher than the temperature of dielectric liquid 240, some dielectric liquid 240 will absorb the generated by wafer 202. Heat and night vapor. Therefore, the heat generated by the wafer 202 can be taken away, and the temperature of the wafer 204 can be reduced. When the dielectric liquid vapor rises through the upright channel 246 into the inclined upper channel 242 and touches the inclined top plate 23 2 and the hollow tube 2 36, the temperature ratio of the air in the outside of the inclined top plate 2 32 and the through hole 2 37 The temperature of the dielectric fluid is still low, and some of the dielectric fluid vapor will release heat to the outside air and condense into a dielectric fluid. Due to the inclined relationship of the inclined upper channel 242, the condensed dielectric liquid will flow back to the containing chamber 244 along the inclined upper channel 142 and the upright channel 246 due to the relationship of gravity, completing the thermal phase change of the dielectric liquid 24. Cycle. Therefore, the dielectric fluid 24 can pass through the circulation path formed by the inclined upper channel B42, the valley chamber 244, and the upright channel 246 under the circulation of the heat transfer phase change of the dielectric liquid 240. The heat transfer effect is still lower than that of the conventional heat sink i 〇6, which makes the wafer 2 〇 4

麵 025F(曰月光).ptd m025F (Yueyue) .ptd m

第11頁 200425430 五、發明說明(7) 所產生的熱量將很快地可以經由 而祜浼捋5々k田 ^ β田;丨電液240之熱傳相變化 而被逸政至外界,使得覆晶式封 ^ 敦熱效果,以維持高品質的運作狀態。 1良好的 實施例二 h ΐ Ϊ照第4圖,L示75依本發明之實施例二之霜曰 式封裝件的剖面圖。在第4圖中, 覆曰曰 例-之覆晶式封穿件20 0不覆曰曰式封裝件400與實施 、可表仵ζ υ ϋ不同之處在於,霜曰彳 f具有㈣之基板上及==件_ 的開口 i t板上表面40 2a的面積大於金屬殼2 30之凹穴238 臭板與金屬殼230組合時,側板234之底端係與 ί Θ臭板上# 接,使得金屬殼2 30係以凹穴238的開口 m 2a之方式與基板4 02黏接。因此,晶片 穴2 38的開…ί至2:4:二基板上表面4〇2“封住凹 β h # Μ 中此些側板2 34之底端可以對應地藉由 7η 者背”基板上表面40 2a黏接,而防水性黏著劑例 如疋防水性樹脂。 > :參照第5圖’其繪示乃依照本發明之實施例一及實 5:例一之覆曰曰式封装件之製造方法的流程圖。言青同時參考 2〜4圖/首σ先’在步驟502中,首先,提供一基板202或 '02。接著,提供一晶片204,並設置晶片2 04於基板2 0 2或 4〇2上。日日片m以晶片主動表面2()4 &覆晶接合於基板上表 面2心或4心’並電性連接至基板2G2或40 2。 200425430 五、發明說明(8) 然後,進入步驟506,提供一翻轉後之金屬殼230,金 屬殼230具有一凹穴238,凹穴238之開口係朝上。其中, 金屬殼2 3 0之結構如第2圖及第3圖所示,在此不再贅述。 接著’進入步驟508中,填充介電液240於翻轉後之金屬殼 ::30之凹穴238中。然後,進入步驟510中,固定翻轉後之 基板2 0 2及晶片2 0 4與翻轉後之金屬殼2 3 0,並形成一倒立 之覆晶式封裝件2 0 0或4 0 0。例如,以一防水性黏著劑黏接 基板側面20 2 c及側板234或基板上表面4〇2c及側板2 34,使 澤金屬殼230與基板20 2或40 2黏接。其中,當基板上表面 ::0 2 a小於或等於金屬殼2 3 0之凹口 2 3 8之開口大小時,基板 2 0 2及晶片2 0 4係被納入於凹穴2 3 8中,基板2 0 2係封住凹穴 38的開口,當基板上表面4〇2a大於金屬殼230之凹口 238 之開口大小時,晶片2 0 4係被納入於凹穴2 3 8中,基板上表 面402c係封住凹穴238的開口。接著,進入步驟512中,翻 正此倒立之覆晶式封裝件2 〇 〇或4 〇 〇,使得介電液2 4 〇盥曰 片背面204b、晶片側面2〇4c及部分之基板上表面2〇2a或 △:0 2a接觸。傾斜上部通道242、容置室244、直立通道246 係形成一循環通路,且介電液24 〇係可於此循環通路作熱 傳相變化之循環流動。 然熟悉此技藝者亦可以明瞭本發明之技術並不侷限於 此,例如,傾斜頂板232、數個側板234及中空管23 6可以、 疋一體成型之結構,金屬殼230之材質為銅、鐵及其他高 導熱性物質。此外,基於中空管23 6與頂板23 2形成傾同 邹通道242的前提下,中空管236的截面可以是任何形狀。Page 11 200425430 V. Description of the invention (7) The heat generated will quickly pass through 5 祜 浼 捋 k fields ^ β fields; the heat transfer phase of the electro-hydraulic 240 is changed to the outside world, so that Flip-Chip Sealing ^ Damp effect to maintain high quality operation. 1 A good embodiment 2 h ΐ Ϊ According to FIG. 4, L shows a cross-sectional view of a frosted package of 75 according to the second embodiment of the present invention. In FIG. 4, the example of the cover-type sealing and sealing member 20 0 and the cover-type package 400 is different from the implementation and can be expressed as 仵 ζ υ ϋ. The frost 彳 f has a substrate of ㈣. The area of the upper surface 40 2a of the it board is larger than the recess 238 of the metal shell 2 30. When the odor board and the metal shell 230 are combined, the bottom end of the side board 234 is connected to ί odor board #, so that The metal shell 2 30 is adhered to the substrate 402 with the opening m 2a of the recess 238. Therefore, the opening of the wafer cavity 2 38 is up to 2: 4: the upper surface of the two substrates 402 "seals the recess β h # Μ. The bottom ends of these side plates 2 34 can be correspondingly backed by the 7η person" substrate. The surface 40 2a is adhered, and a water-resistant adhesive such as a water-resistant resin. >: Referring to FIG. 5 ', the drawing is a flow chart of a method for manufacturing a package in accordance with the first embodiment and the fifth embodiment of the present invention. Yan Qing refers to 2 to 4 pictures / first σ first 'at step 502. First, a substrate 202 or '02 is provided. Next, a wafer 204 is provided, and the wafer 204 is set on the substrate 202 or 402. The day-to-day chip m is bonded to the substrate 2G or 4C with the active surface 2 () 4 & flip chip of the wafer and is electrically connected to the substrate 2G2 or 402. 200425430 V. Description of the invention (8) Then, step 506 is provided to provide a metal case 230 after being turned over. The metal case 230 has a recess 238, and the opening of the recess 238 faces upward. The structure of the metal shell 230 is as shown in FIG. 2 and FIG. 3, and is not repeated here. Then, the method proceeds to step 508, and the dielectric liquid 240 is filled in the recess 238 of the metal case :: 30 after the inversion. Then, in step 510, the flipped substrate 202 and the wafer 204 and the flipped metal shell 230 are fixed, and an inverted flip-chip package 200 or 400 is formed. For example, the side surface of the substrate 20 2 c and the side plate 234 or the top surface of the substrate 402 c and the side plate 2 34 are adhered with a waterproof adhesive, so that the metal case 230 is adhered to the substrate 20 2 or 40 2. Among them, when the upper surface of the substrate: 0 2 a is less than or equal to the opening size of the notch 2 3 8 of the metal shell 2 3 0, the substrate 2 0 2 and the wafer 2 0 4 are included in the cavity 2 3 8. The substrate 2 0 2 seals the opening of the cavity 38. When the upper surface 40 2 a of the substrate is larger than the opening size of the notch 238 of the metal shell 230, the wafer 2 0 4 is included in the cavity 2 3 8. The surface 402c seals the opening of the recess 238. Next, in step 512, the inverted flip-chip package 2000 or 400 is inverted, so that the dielectric liquid 240 is on the back surface 204b of the wafer, the side surface 204c of the wafer, and the upper surface 2 of the substrate 2 〇2a or △: 0 2a. The inclined upper channel 242, the accommodating chamber 244, and the upright channel 246 form a circulation path, and the dielectric fluid 240 can perform a cyclic flow in which the heat transfer phase changes. However, those skilled in the art can also understand that the technology of the present invention is not limited to this. For example, the inclined top plate 232, a number of side plates 234, and the hollow tube 23 6 can be integrally formed. The material of the metal shell 230 is copper, Iron and other highly thermally conductive substances. In addition, based on the premise that the hollow tube 23 6 and the top plate 23 2 form the same Zou channel 242, the cross section of the hollow tube 236 may be any shape.

200425430 五、發明說明(9) J電液240例如是低介電係數液體及冷卻液pc — 72,而冷卻 夜F C - 7 2之沸點大致上為5 6 · 6 C。當然,本發明亦可以省 咯中空管246的設計,依然可以讓覆晶式封裝件2〇0及4〇〇 達到散熱的效果。 本發明上述實施例所揭露之覆晶式封裝件及其製造方 ^#^利用不導電及低介電係數之介電液的熱傳相變化而 ^所產生的熱量至外界’並以金屬殼内之循環通路 =為;丨電液之熱傳相變化之循環流動,使 件可t達到良好的散熱效果及運作性能。& m 妙νϋ:述’雖然本發明已以一較佳實施例揭露如上, 以ί 發明,任何熟習此技藝者,在不脫離 本:日=2 内,當可作各種之更動與潤飾,因此 ’、遵範圍當視後附之申請專利範圍所界定者為 平。200425430 V. Description of the invention (9) J electro-hydraulic 240 is, for example, a low-dielectric constant liquid and a cooling liquid pc — 72, and the boiling point of the cooling night F C-7 2 is approximately 5 6 · 6 C. Of course, the present invention can also save the design of the hollow tube 246, and still allow the flip-chip packages 2000 and 400 to achieve the effect of heat dissipation. The flip-chip package and its manufacturing method disclosed in the above embodiments of the present invention ^ # ^ use the heat transfer phase change of the non-conductive and low dielectric constant dielectric fluid ^ generated heat to the outside 'and the metal shell The internal circulation path = is; 丨 The circulating flow of the heat transfer phase of the electro-hydraulic changes, so that the part can achieve a good heat dissipation effect and operating performance. & m 妙 νϋ: described 'Although the present invention has been disclosed as above with a preferred embodiment, to invent, anyone skilled in this art will not depart from this: Day = 2, when various changes and retouching can be made, Therefore, the scope of 'and compliance' shall be regarded as flat as defined by the scope of the attached patent application.

面圖。 之覆晶式封裝件 200425430 圖式簡單說明 【圖式簡單說明】Face view. Flip-chip package 200425430 Simple illustration of the drawing [Simplified illustration of the drawing]

第1圖繪示乃傳統之覆晶式封I 第2圖繪示乃依照本發明之會:牛的剖 員%例 的剖面圖。 第3圖繪示乃第2圖之金屬殼的立體u 第4圖繪示乃依照本發明之眘价y -圖。 〜貝她例二夕 的剖面圖。 復日日式封裳 第5圖繪示乃依照本發明之實施例一 晶式封裝件之製造方法的流程圖。 實施例 件 之覆Fig. 1 shows a conventional flip-chip type seal I. Fig. 2 shows a cross-sectional view of the example of the cattle's cross-section, according to the meeting of the present invention. Figure 3 shows the three-dimensional u of the metal shell in Figure 2. Figure 4 shows the prudent y-graph according to the invention. ~ Beta case cross-sectional view. Figure 5 shows a flowchart of a method for manufacturing a crystal package according to the first embodiment of the present invention. Example Cover

圖式標號說明 100、2 0 0、40 0 :覆晶式封裝件 102、2 0 2、4 0 2 ··基板 102a、202a、402a :基板上表面 102b、2 0 2b、40 2b :基板下表面 1 0 4 、2 0 4 :晶片 104a、2 04a :晶片主動表面 104b 、 204b :晶片背面 1 0 6 :散熱片 11 2 :支撐物 11 4、2 1 4 :錫球 2 0 2 c :基板側面 2 0 4c :晶片侧面Explanation of reference numerals 100, 2 0, 4 0 0: flip-chip package 102, 2 0 2, 4 0 2 · substrates 102a, 202a, 402a: upper surface of the substrate 102b, 2 0 2b, 40 2b: under the substrate Surfaces 104, 204: wafers 104a, 204a: wafer active surfaces 104b, 204b: wafer back surface 106: heat sink 11 2: support 11 4, 2 1 4: solder balls 2 0 2c: substrate Side 2 0 4c: Side of wafer

200425430 圖式簡單說明 230 金屬殼 232 頂板 234 側板 236 中空管 237 貫通孔 238 凹穴 240 介電液 242 傾斜上部通道 244 容置室 246 直立通道 ❿ TW 025F(日月光).ptd 第16頁200425430 Brief description of drawings 230 Metal shell 232 Top plate 234 Side plate 236 Hollow tube 237 Through hole 238 Recess 240 Dielectric liquid 242 Inclined upper channel 244 Receiving room 246 Upright channel ❿ TW 025F (sunlight) .ptd page 16

Claims (1)

200425430 六、申請專利範圍 1 · 一種覆晶式封裝件,至少包括: 一基板,具有相對之一基板上表面及 一晶片’具有相對之一晶片主動表面 該晶片係以該晶片主動表面覆晶接合於該 電性連接至該基板; 一金屬殼,具有一凹穴,該金屬殼係 面向該基板上表面與該基板黏接,該凹穴 且該基板係封住該凹穴之開口;以及 一介電液,係填充於該金屬殼之該凹 之該基板上表面、該晶片背面及該晶片之 電液係於該金屬殼中為熱傳相變化之循環 2 · 如申請專利範圍第1項所述之覆晶 該金屬殼更包括: 一傾斜頂板;以及 複數個側板,係均與該傾斜頂板連接 均與該基板黏接,使得該基板係封住該凹 3.如申請專利範圍第2項所述之覆晶 該金屬殼更具有一中空管,該中空管係貫 相對之兩側板,用以分隔該凹穴為一傾斜 置室及複數個直立通道,該傾斜上部通道 板及該中空管之間,該容置室係位於該中 及該基板上表面之間,並用以容納該晶片 係位於部分之該些側板及該中空管之間, 上部通道及該容置室,該傾斜上部通道、 一基板下表面; 及一晶片背面, 基板上表面, 以該凹穴之開 係納入該晶片 並 穴中,並與部分 側面接觸,該介 流動。 式封裝件,其中 ,且該些側板係 穴之開口。 式封裴件,其中 穿該些側板中之 上部通道、一容 係位於該傾斜頂 空管、該些侧板 ’該些直立通道 用以連通該傾斜 該容置室、該些200425430 6. Scope of patent application 1 · A flip-chip package, at least comprising: a substrate having an upper surface of the opposite substrate and a wafer 'having an active surface of the opposite wafer The wafer is bonded with the active surface of the wafer To the substrate electrically connected to the substrate; a metal shell having a cavity, the metal shell is attached to the substrate facing the upper surface of the substrate, the cavity and the substrate seal the opening of the cavity; and The dielectric fluid is filled in the metal shell of the concave upper surface of the substrate, the back of the wafer and the wafer's electro-hydraulic system in the metal shell is a cycle of heat transfer phase change The flip-chip metal shell further includes: an inclined top plate; and a plurality of side plates, all of which are connected to the inclined top plate and are adhered to the substrate, so that the substrate seals the recess 3. If the scope of patent application is the second The metal shell described in the item further has a hollow tube. The hollow tube runs through two opposite plates to separate the cavity into an inclined chamber and a plurality of upright channels. The inclined upper channel Between the hollow tube and the hollow tube, the accommodating chamber is located between the middle and the upper surface of the substrate, and is used for accommodating the wafer between the side plates and the hollow tube, the upper channel and the receiving tube. A cavity, the inclined upper channel, a lower surface of the substrate; and a back surface of the wafer, and the upper surface of the substrate, are incorporated into the wafer cavity with the opening of the cavity, and are in contact with part of the side surface, and the medium flows. Type package, in which the side plates are openings of holes. Type seals, which pass through the upper channels in the side plates, a container located in the inclined headspace tube, the side plates, and the upright channels are used to communicate with the inclined, the accommodation room, the TW1025F(日月光).PtdTW1025F (sun and moonlight) .Ptd 6.如申請專利範圍第1項所诚夕豫曰々士 電液之液面係高於玆且μ、北π 曰曰> 、f裝件’其中 該介電液之液面係高於該晶 其中 其中 其中 ’八7電广申請專利範圍第1項所述之覆晶式封裝件 遠;I電液為具有低介電係數的液體。 8·如申請專利範圍第丨項所述之覆晶式封裝 該介電液為冷卻液FC-72,其沸點大致上為56. 6 t。 9·如申請專利範圍第1項所述之覆晶式封裝件 該覆晶式封裝件更包括: 複數個錫球’係配置於該基板下表面上。 10· —種覆晶式封裝件的製造方法,至少包括: 提供一基板’該基板具有相對之一基板上表面及一基 板下表面; i 提供一具有相對之一晶片主動表面及一晶片背面之晶 片,並將該晶片以該晶片主動表面覆晶接合於該基板上表 面,使得該晶片與該基板電性連接; 提供一翻轉後之金屬殼’該金屬殼具有一凹穴,該凹6. According to the scope of the patent application, the liquid level of Chengshi Yushi Electro-Hydraulic Electro-Hydraulic is higher than that, and μ, North π, >, f, where the liquid level of the dielectric fluid is higher than Among these crystals, among them, the flip-chip package described in item 1 of the patent application scope of the "Eight-seventh Electronics" is far away; I electro-hydraulic is a liquid with a low dielectric constant. 8 · Flip-chip package as described in item 丨 of the patent application range The dielectric fluid is coolant FC-72, and its boiling point is approximately 56.6 t. 9. The flip-chip package according to item 1 of the patent application scope. The flip-chip package further includes: a plurality of solder balls' arranged on the lower surface of the substrate. 10 · —A method for manufacturing a flip-chip package, including at least: providing a substrate having an upper surface and a lower surface of the opposite substrate; providing a substrate having an active surface and a back surface of the wafer opposite to each other; A wafer, and the wafer is bonded to the upper surface of the substrate with the active surface of the wafer flip-chip, so that the wafer is electrically connected to the substrate; a metal shell is provided after the flip, the metal shell has a cavity, and the cavity TWJ25F(曰月光).ptd 第18頁 200425430 六、申請專利範圍 穴之開口係朝 填充一介 固定翻轉 以形成一倒立 中,該基板係 翻正該倒 該基板上表面 液係於該金屬 11· 如申 殼更包括: 一傾斜頂 複數個側 均與該基板黏 12·如申 殼更具有一中 兩側板,用以 複數個直立通 中空管之間, 板上表面之間 部分之該些側 道及該容置室 道係形成一循 相變化之循環 13·如申 上; 電液於該凹 後之該基板 之覆晶式封 封住該凹穴 立之覆晶式 、該晶片背 殼中為熱傳 請專利範圍 板;以及 板,係均與 接,使得該 請專利範圍 空管,該中 分隔該凹六 道,該傾斜 該容置室係 ,並用以容 板及該中空 ,該傾斜上 環通路,該 流動。 請專利範圍 穴中; 及該晶片與翻轉後之該金屬殼, 裝件,該晶片係被納入於該凹穴 之開口;以及 封裝件,使得該介電液與部分之 面及該晶片之側面接觸’該介電 相變化之循環流動。 第1 0項所述之方法,其中該金屬 該傾斜 基板係 第11項 空管係 為一傾 上部通 位於該 納該晶 管之間 部通道 介電液 頂板連接 封住該凹 所述之方 貫穿該些 斜上部通 道係位於 中空管、 片,該些 ,用以連 、該容置 係可於該 ,且該 穴之開 法,其 側板中 道~ — 該傾斜 該些側 直立通 通該傾 室、該 循環通 些侧板係 D 〇 中該金屬 之相對之 容置室及 頂板及該 板及該基 道係位於 斜上部通 些直立通 路作熱傳 第1 2項所述之方法,其中該些側TWJ25F (Yueguang) .ptd Page 18 200425430 VI. Patent application: The opening of the cavity is fixed and flipped to fill a medium to form an inverted state. The substrate is turned upside down. The Shen shell further includes: a plurality of sides with an inclined top are adhered to the base plate 12 · If the Shen shell has a middle side plate for a plurality of upright hollow pipes, the sides between the upper surface of the board The channel and the accommodating chamber channel form a cycle of phase-change 13. As mentioned above; electro-hydraulic chip-type sealing of the substrate behind the recess to seal the chip-type recess of the cavity and the wafer back shell The middle is a patented plate for heat transfer; and the plates are all connected, so that the patented empty tube is divided, the middle divides the six recesses, the tilting of the accommodation room is used to contain the board and the hollow, the tilt On the ring road, this flow. Please patent the cavity; and the chip and the metal shell and the component after the flip, the wafer is included in the opening of the cavity; and the package, so that the dielectric liquid and the side of the part and the side of the wafer Contact 'a cyclic flow of this dielectric phase change. The method according to item 10, wherein the metal, the inclined substrate is the eleventh empty tube system, and an inclined upper part is connected to the dielectric liquid top plate of the channel between the receiving tube and the receiving tube to seal the recessed square. The inclined upper channels are located in the hollow tube and the sheet, which are used to connect and the accommodation system can be opened, and the method of opening the hole has its side plate in the middle of the channel ~ — The sloped sides can be connected directly to the The tilting chamber, the circulating side plates are the opposite accommodating chambers and top plates of the metal in D0, and the plates and the base channel are located at the oblique upper part through some upright passages for the heat transfer method described in item 12, Which of these sides TW1025F(日月光).Ptd 第19頁 200425430TW1025F (Sun and Moonlight) .Ptd Page 19 200425430 板係藉由一防水性勒著劑與該基板之側面緊密黏接,該晶 片及該基板係被納入於該容置室中。 14·如申請專利範圍第1 2項戶斤述之方法,其中該些側 板之底端係藉由一防水性黏著劑與該基板上表面緊密黏 接。 口” 15·如申請專利範圍第1 〇項所述之方法’其中該介電 液之液面係高於該晶片背面。The board is tightly adhered to the side of the substrate by a water-resistant chuck, and the wafer and the substrate are incorporated in the accommodating chamber. 14. The method described in item 12 of the scope of patent application, wherein the bottom ends of the side plates are tightly adhered to the upper surface of the substrate by a waterproof adhesive.口 "15. The method according to item 10 of the scope of patent application ', wherein the liquid level of the dielectric liquid is higher than the back surface of the wafer. 16. 如申請專利範圍第1 〇項所述之方法,其中該介電 液為具有低介電係數的液體。 17. 如申請專利範圍第1 〇項所述之方法,其中該介電 液為冷卻液F C _ 7 2,其彿點大致上為5 6 · 6 °C。 18. 如申請專利範圍第1 〇項所述之方法,其中該覆晶 式封裝件更包括·· 複數個錫球,係配置於該基板下表面上。 19· 一種覆晶式封裝件,至少包括·16. The method according to item 10 of the scope of patent application, wherein the dielectric liquid is a liquid having a low dielectric constant. 17. The method as described in item 10 of the scope of patent application, wherein the dielectric fluid is a cooling fluid F C _ 72, and its Buddha point is approximately 5 6 · 6 ° C. 18. The method as described in item 10 of the scope of patent application, wherein the flip-chip package further includes a plurality of solder balls arranged on the lower surface of the substrate. 19 · A flip-chip package including at least · 一基板,具有相對之一基板上表面及一基板下表面; 一晶片,具有相對之一晶片主動表面及一晶片背面, 該晶片係以該晶片主動表面覆晶接合於該基板上表面,並 電性連接至該基板; 一金屬殼’具有一凹穴,該金屬殼係以該凹穴的開口 面向該基板上表面與該基板黏接,該凹穴係納入該晶片, 且該基板係封住該凹穴之開口,該金屬殼更包括: 一傾斜頂板; 複數個側板,係均與該傾斜頂板連接以形成該凹A substrate having an opposite upper surface of the substrate and a lower surface of the substrate; a wafer having an opposite active surface of the wafer and a back surface of the wafer; the wafer is bonded to the upper surface of the substrate with the active surface of the wafer flip-chip bonded and electrically A metal shell 'has a cavity, the metal shell is adhered to the substrate with the opening of the cavity facing the upper surface of the substrate, the cavity is incorporated into the wafer, and the substrate is sealed The opening of the cavity, the metal shell further includes: an inclined top plate; a plurality of side plates are connected to the inclined top plate to form the cavity; TW 〇25F(日月光).ptd 第20頁 200425430 六、申請專利範圍 穴,並與該基板黏接;及 一中空官’係貫穿該些側板中之相對之兩側板, 並分隔該凹穴為一傾斜上部通道、一容置室及複數個直立 通道,該傾斜上部通道係位於該傾斜頂板及該中空管之 間,該容置室係位於該中空管、該些側板及該基板上表面 之間,並用以容納該晶片,該些直立通道係位於部分之該 些側板及該中空管之間,用以連通該傾斜上部通道及該容 置室,該傾斜上部通道、該容置室、該些直立通道係形^ 一循環通路;以及TW 〇25F (日月光) .ptd Page 20 200425430 VI. Apply for a patent scope cavity and adhere to the substrate; and a hollow officer 'is a two-sided plate that runs through the side plates and separates the cavity into a cavity. Inclined upper channel, an accommodation room and a plurality of upright channels, the inclined upper channel is located between the inclined top plate and the hollow tube, and the accommodation room is located on the hollow tube, the side plates and the upper surface of the base plate The vertical channels are located between the side plates and the hollow tube, and are used to communicate the inclined upper channel and the accommodating chamber, the inclined upper channel, the accommodating chamber. , The upright channels form a circular path; and 一介電液,係填充於該金屬殼之該凹穴中,並與部分 之該基板上表面、該晶片背面及該晶片之側面接觸,該介 電液係可於该循壞通路作熱傳相變化之循環流動。 2 0·如申請專利範圍第1 9項所述之覆晶式封裝件,其 中該些側板係藉由一防水性黏著劑與該基板之側面緊密^ 接,該晶片及該基板係被納入於該容置室中。 21·如申請專利範圍第1 9項所述之覆晶式封裝件,复 中該些側板之底端係藉由一防水性黏著劑與該基板 /、 緊密黏接。 ® _ 2 2 ·如申請專利範圍第1 9項所述之覆晶式封骏件,复 中該介電液之液面係高於該晶片背面。 、 2 3·如申請專利範圍第1 9項所述之覆晶式封裝件,复 中該介電液為具有低介電係數的浪體。 一 2 4 ·如申請專利範圍第2 0項所述之覆晶式封裝件,复 中該介電液為冷卻液Fc_72,其沸黠大致上為56· 6 t。、A dielectric liquid is filled in the cavity of the metal shell, and is in contact with a part of the upper surface of the substrate, the back of the wafer, and the side of the wafer. The dielectric liquid can conduct heat transfer through the broken path. Phase change cycle flow. 20 · The flip-chip package as described in item 19 of the scope of the patent application, wherein the side plates are tightly connected to the side of the substrate by a waterproof adhesive, and the chip and the substrate are included in This accommodation room. 21. The flip-chip package as described in item 19 of the scope of patent application, wherein the bottom ends of the side plates are tightly adhered to the substrate via a waterproof adhesive. ® _ 2 2 · According to the flip-chip package described in item 19 of the scope of patent application, the liquid level of the dielectric fluid is higher than the back of the wafer. 2, 3 · The flip-chip package as described in item 19 of the scope of the patent application, wherein the dielectric fluid is a wave body with a low dielectric constant. A 2 4 · The flip-chip package as described in item 20 of the scope of patent application, the dielectric fluid is a cooling fluid Fc_72, and its boiling point is approximately 56 · 6 t. , 200425430200425430 TW:025F(日月光).ptd 第22頁TW: 025F (Sun Moonlight) .ptd Page 22
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