TW200425231A - Method and apparatus for megasonic cleaning of patterned substrates - Google Patents

Abstract

A method for cleaning a semiconductor substrate is provided. The method initiates with generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate. Then, acoustic energy oriented in a substantially parallel direction to the surface of the semiconductor substrate is generated. Each orientation of the acoustic energy may be simultaneously generated or alternately generated. A system and an apparatus for cleaning a semiconductor substrate are also provided.

Description

200425231 V. Description of the Invention (l) 1. [Technical Field of the Invention] The present invention relates generally to a method of cleaning a surface, and more particularly, to a method and a device for cleaning a semiconductor substrate with a frequency of megahertz with a manufacturing process. 2. [Previous Technology] Megahertz cleaning method is widely used in semiconductor process operation 'and can be used in the cleaning process of a whole batch of wafers or a single wafer. For the cleaning process of a whole batch of wafers, the vibration of the megahertz ultrasonic transducer creates a sound pressure wave in a liquid in a cleaning tank containing a whole set of semiconductor substrates. A single-chip megahertz cleaning procedure uses a relatively small converter placed on a rotating wafer, where the converter scans the wafer or, in the case of complete immersion, a A single wafer slot immersion system is used. In each case of ultrasonic cleaning with megahertz, its main particle removal mechanism is due to the cavitation effect and the sound current. The cavitation effect is due to the rapid generation and disintegration of microbubbles generated from a dissolved gas when sound energy is applied to a liquid medium. The disintegration of the micro-bubbles releases the energy that helps to remove the particles. These energy help to remove the particles by destroying the various adhesion forces that adhere the particles to the semiconductor substrate. Acoustic pulsation refers to the flow-shaped energy guided by sound waves through this fluid when radio frequency power is applied to a piezoelectric transducer. Figure 1A is a schematic diagram of a megahertz ultrasonic cleaning system for a whole batch of wafers. 1 The washing tank 100 is filled with a cleaning liquid. The wafer holder 102 has a built-in ^ set of wafers to be cleaned monthly. Transducer 104 is manufactured by transmitting acoustic energy at a frequency close to i MHz

Out of pressure waves. This is the pressure "again, and-to mention the redundant particles avoid using 'so, in order to communicate with the international:] two = consumption of liquid to reduce the consumption of chemical liquid, increase: (): requirements-less Defects,% investigators will focus on the control of C Yuegu, and the cleaning system. The whole batch of wafers; Need to withstand the multi-wafer megahertz ultrasonic interference cancellation of multiple wafers to produce ΓΓ interference and produce 1 "hot spot", or 2 'because of the reflection of phase ultrasonic waves-which is the case in both cases by megahertz VH ultrasonic and these reflections are caused by the characteristics of multiple wafers and sensations. The cause of injury is: the pattern or sensitivity on the wafer substrate will cause incomplete cleaning; ΞΓ. For the cold spot, 'because u J shape', it is necessary to apply a guest's cobalt cobalt ultrasonic energy, and pass it straight through the soil. She uses a million FB 2 + of the apple to make her target reach All the wafers in the wafer support 102 == the situation described above must therefore have a-eclectic approach, with U ϊ ϊ ϊ the lowest, and at the same time can provide a high enough average energy to achieve the effect of complete cleaning. Figure 1B is a schematic diagram of a single-wafer megahertz cleaning tank. In ": green washing tank] 06 was filled with a cleaning solution. Two: θ〇9 supported by the carrier 108, was / again / wrapped in the cleaning solution in * washing tank 106. Conversion The device 104 is used to clean wafers 1.09. This cleaning solution is typically designed to correct the electromotive potential (r_potentiai) between the wafer surface and the particles. These particles are

200425231 V. Description of the invention (3) _ refers to the particles removed from the wafer surface by the acoustic energy provided by the converter 104 to prevent the particles from re-adhering. In order to maintain a proper t-potential between the surface and the surface, the concentration of the cleaning solution should be 1-mile. However, 'for the limited scope of the wafer substrate: out points, voids, channels, etc., because the interface between the particles and the wafer substrate by the feature = can not be "territory / monthly washing liquid degree, that is, The cleaning liquid is replenished, and the stove is on the surface of the wafer substrate. In addition, pour # # β + the converter in the direction of redepositing ancestors = come; use only vertical straight: wafer substrate surface wave "system ), High longitudinal hundred = tone = lower part of the sign 4 'Move the megahertz ultrasonic energy I method into 5 into' The acupoint effect also cannot play a role. For the use of parallel to the crystal, circle ^ space applications, but the acoustic impulse is not large; the features play as gaps between other crystals. This =:,:, such a structure causes the individual to provide the sound energy; = "The disadvantage is that because the dust crystal area can not be supplied with sufficient level of sound = 钍 ^ volume, the gap caused some Even in certain areas, you ca n’t see even-: sound :, even :, ι〇9 will inevitably happen. Benzene is not even cleaned. In addition, electrodeposition operation, a thin film is deposited on the substrate of the wafer. , Plating, is also often used on the ... ... electricity and money on the patterned wafer substrate special d's 200425231 five 'invention description (4) the formation of bubbles are more than the characteristic part will be collected from the cleaning solution In view of the million-megahertz requirement of the above wafer, this ideal structure department limited the deposition to the crystal requirement again: one is to be able to bubble, the other is to be able to feature the aspect ratio. The above mentioned wafer features provide a set of raw materials for transportation in a circular feature area in multiple ways, and are prepared to be implemented. In a practical situation, the electroless plating will be transported in. The mentioned Ultrasonic cleanup refers to The area around the circle. This control experience improves the situation in the reaction.] According to the requirements of the present invention, the system of peeling particles to help control the phenomenon of bubbles includes being used. The embodiment of the present invention is empty when the power mine operation is continued. Another disadvantage is that in the characteristic part, the by-product situation derives the ability to wash the ideal structure of the system. The cleaning area is used to avoid being out of the sound, and the characteristic parts and by-products for electroless plating are also derived. It is transported by holes. The newly generated reaction items that penetrate into the high and vertical directions will be supplemented with the same special required liquid that can provide a single method and equipment to the particles that can be peeled off by the special energy. The high longitudinal energy can be transported by providing a cleaning method and equipment. The cleaning method and equipment can provide acoustic energy access and can replenish the cleaning chemical liquid into the crystals to remove the peeled particles. In addition, the invention also generates and Improving the system and method developed during the operation of electricity-free power mines. I should understand that the present invention can be implemented as a method, a system or a set of inventions. Will be said in a subsequent semiconductor substrate provides a cleaning side

Page 10 200425231 V. Description of Invention (5)-Law. This method is initiated by generating acoustic energy, which is mainly advanced in a direction perpendicular to the surface of the semiconductor substrate. · Then, the sound energy is generated which mainly advances in a direction parallel to the surface of the semiconductor substrate. Sound energy in each direction can be generated in the same (in-phase) or alternately (out-of-phase).

In another embodiment, a semiconductor substrate cleaning apparatus is provided. The device includes a base and at least one side wall extending from the base. The sidewall is substantially perpendicular to the base. The device also contains a 1 million-megahertz ultrasonic converter fixed to the base. A second megahertz ultrasonic converter fixed to the side wall is also included in the device. The first megahertz ultrasonic converter is mainly located in a direction orthogonal to the second megahertz ultrasonic converter.

Yet another embodiment provides a cleaning system for a semiconductor substrate. The system includes a cleaning tank having an internal cavity defined by a base, and at least one side wall extending from the cleaning tank. The cleaning tank is installed to hold the cleaning liquid in its internal cavity. The system also includes a semiconductor substrate support, which is mounted to support the semiconductor substrate and rotate the semiconductor substrate about the axis of the semiconductor substrate. The semiconductor substrate support is further installed to support and rotate the semiconductor substrate in the internal cavity of the cleaning tank. This system does not include a first megahertz ultrasound converter connected to the base. The top surface of this first megahertz ultrasonic converter is substantially parallel to the bottom surface of the semiconductor substrate. The second megahertz ultrasonic converter is connected to at least one side wall. This 1 million-megahertz ultrasonic converter is installed to generate acoustic energy mainly in a direction perpendicular to the bottom surface of the semiconductor substrate. And this second megahertz ultrasonic converter is

Page 11 200425231 V. Description of the invention (6) It is installed to generate sound energy that mainly advances in a direction parallel to the bottom surface of the semiconductor substrate. In still another embodiment, an electroless plating method for a semiconductor substrate is provided. The method begins by immersing a semiconductor substrate in a plating solution, and then depositing a thin film on the surface of the semiconductor substrate. And the acoustic energy is transmitted into this plating solution. In one embodiment, a transducer placed substantially in the direction of the wafer surface is used to generate acoustic energy, and the acoustic energy is directed onto the surface of the semiconductor substrate to be controlled on the surface of the semiconductor substrate Bubbles are generated. In another embodiment, a transducer that is placed substantially perpendicular to the surface of the wafer is used to generate acoustic energy, the acoustic energy is = onto the surface of the semiconductor substrate to improve the response on the surface of the semiconductor substrate Transport of goods and by-products. In another embodiment, an electroless plating apparatus for a semiconductor substrate is provided. The device includes a plating gamma installed to hold a plating solution and a converter installed to transmit acoustic energy into the plating solution. That is to say, other embodiments and advantages of the present invention will be concretely revealed through the following two detailed descriptions, together with accompanying drawings, and the principles of the present invention will be described in detail. Wanshi 'IV. [Implementation method] Provides a megahertz cleaning system, equipment and methods. The cleaning structure of the acoustic wave is optimized to add chemical liquid that can directly clean the sound energy. Limited by the characteristics department;

Page 12 200425231 V. Description of the invention (7)

"For those skilled in the art," the present invention states that the month b is practiced without some or all of the specific details. On the other hand, the operation methods that are commonly known to the general public are not described in detail here, so as not to cause unnecessary confusion on the contents of this manual. Fig. U and Fig. 1β show related parts of the prior art. The value used here is the parameter = ° + / — 10%.乂 m Feng The embodiment of the present invention provides a system for optimizing wave cleaning efficiency, and a substrate and a wafer that can be positioned in a direction orthogonal to each other and a megahertz effect and an acoustic impulse effect. The optimization is achieved, and the conversion benefit is mainly perpendicular to the surface of the substrate to be cleaned. The flat wave converter is substantially perpendicular to the substrate to be cleaned and parallel to the surface of the substrate to be cleaned. The device can directly provide acoustic energy into the pattern for the feature. Acoustic energy causes particles in the U-section of the cavity. On the other hand, the sonic impulse on this megahertz surface of the substrate surface is determined. This pulsating current can cause eddy currents or turbulence in the interior. As a result, the effect of the inevitable characteristic portion is enhanced to enhance the cleaning efficiency. In addition, the embodiments described herein use ultrasonic acoustic energy to improve a method for electroless plating of patterned substrates. This is swapped here. With one million rows of the ultrasonic converter and the effect of the other substrate on this substrate, the characteristic of the converter is naturally placed on the characteristic surface. Also, the megahertz characteristic part can be stripped of any sagging material, which can provide surrounding substrates. The substrate used inside the faculty provides two substrates, which are used to convert the hole-effect ultrasonic wave to the megahertz. That is, real ultrasonic conversion. It is directly adhered to Doosi Temple, straight to be cleaned, parallel to the wafer field and features. The chemicals that are transported in and out also provide a system of deposition quality through the application process. 200425231 V. Description of Invention (8). The application of megahertz acoustic energy causes cavitation effects, which help disintegrate the bubbles formed during the electroless plating process. Before the disintegration ’the size of the bubble grows depending on the frequency of the megahertz sound energy used. Therefore, the bubbles generated on the wafer surface through the electroless electrolysis process can be controlled by the application of megahertz acoustic energy in the electroless electrolysis process. Fig. 2 is a simplified megahertz ultrasonic cleaning apparatus obtained according to an embodiment of the present invention. The Megahertz ultrasonic cleaning equipment includes a cleaning tank having a side wall 118 and a side wall 122, both of which extend from the base 120. This cleaning tank contains the cleaning solution 丨 丨 2 in the tank. The cleaning liquid 112 can be any cleaning liquid suitable for use in a megahertz cleaning device. The so-called suitable cleaning liquid has characteristics that help to remove particles and prevent particles from being deposited on the surface of the wafer substrate 116 again. The cleaning solution and the cleaning chemistry used herein are interchangeable with each other. As can be seen in the figure, the wafer substrate 116 is immersed into the cleaning solution 112 and is held by the carrier 114. It is obvious to those skilled in the art that any suitable device capable of supporting the wafer substrate 116 in the cleaning liquid 112 in the megahertz cleaning tank can be used here. The megahertz ultrasonic cleaning tank is connected to a megahertz converter 124 and a megahertz converter 126. The megahertz converter 126 is positioned perpendicular to the bottom surface 17 of the wafer substrate 16. Therefore, the 'megahertz ultrasonic converter 126 can provide an acoustic rush current parallel to the bottom surface 117, as described below. The megahertz converter 124 is positioned parallel to the bottom surface 117 of the wafer substrate 116

200425231, Invention Description (9). Therefore, the 'megahertz converter 124' can provide acoustic energy of energy parts, such as channels, holes, grooves, etc., in terms of characteristics, cavity effects. In other words, they are perpendicular to the surface of the wafer and two L2: I 10-megahertz ultrasonic converters will provide alternating sound currents to remove and remove particles adhering to the substrate surface. The second and eighth political application is another embodiment of the megahertz cleaning apparatus of FIG. 2. The circular substrate 116 is placed in a vertical position instead of the horizontal position shown in FIG. 2. For those skilled in the art, it is obvious that the wafer substrate 1 16 can be supported by any appropriate substrate supporting tool, such as a substrate carrier, a roller, and the like. The wafer substrate 6 is immersed in the cleaning liquid 2 in the two chambers defined by the base 1 20 and the side walls of the ultrasonic cleaning bath of megahertz 8 and i 2 2. Those skilled in the art should understand that the megahertz cleaning tank can be any shape suitable for providing acoustic energy conversion from a megahertz converter. Among them, a megahertz converter can Provides acoustic energy that is substantially perpendicular to the substrate surface, while another Hertzsonian transducer provides acoustic energy that is substantially parallel to the substrate surface. ^ In one embodiment, the sound energy in the vertical direction is within a range of 5 degrees from the standard value, that is, between 90 ± 5 degrees. The standard value here refers to the surface of the substrate. In another embodiment, the acoustic energy in the parallel direction is within a range of 5 degrees from the parallel, that is, between 0 ° and 5 degrees. Here, the parallel 2 directions refers to the direction parallel to the substrate surface or relative to the substrate surface. In terms of parallel planes. Therefore, the shape of the base can be rectangular, square, or even circular, as long as its side walls can be installed to allow the configuration to

Page 15 200425231 V. Description of the invention (10) The megahertz ultrasonic transducer whose sound energy transmitted by the megahertz ultrasonic transducer is orthogonal. Those skilled in this technology should understand that the cleaning liquid 112 can be any commercially available cleaning liquid, such as those available from DuPont

Obtained by DUPONT Electronic Technologies, EKC Technology, inc · or ASHLAND Corporation. Fig. 4 is an enlarged cross-sectional view of a megahertz ultrasonic cleaning apparatus obtained according to an embodiment of the present invention. Here, the bottom surface 11 17 of the patterned wafer substrate 丨 6 is depicted in more detail, that is, the feature portion of the bottom surface of the patterned wafer substrate is illustrated. The wafer substrate 116 is immersed in a cleaning liquid 112 in a cavity defined by the side walls 118 and 122 of the megahertz ultrasonic cleaning tank and the pedestal 120. Those skilled in the art should understand that the wafer substrate 116 can be rotated along its axis through an appropriate semiconductor substrate support. The megahertz converters 24 and 26 include converter elements 124a and 126a, and resonator elements 1241} and 126b, respectively. The megahertz converters 124 and 126 may be any suitable megahertz converters commercially available. Megahertz conversion only =, typically produces ultrasonic energy in the frequency range between 50 kHz and 5 MHz. For those skilled in the art, it is obvious that the selection of the special material of the megahertz converter will determine the frequency range of its energy generation. Suitable materials include piezoelectric materials and piezoelectric ceramic materials, quartz and sapphire. The Megahertz Ultrasonic Converter 丨 24 is positioned relative to the Megahertz Ultrasonic Converter 126 to allow the most optimal sound energy and material rotation situation to be obtained ^

200425231 V. Description of the invention (11) Good cleaning of the patterned wafer substrate 1 16 1 24 is used to provide acoustic energy, and this acoustic energy is effective. The characteristic part of the surface 117 of the megahertz converter. As a result, the special steam on the bottom of the patterned wafer substrate 116 that is adhered to the bottom surface 117 will cause a cavitation effect to peel off the particles 132 to prevent the particles 132 from attaching to the special inner surface again. The sonic converter 126 will provide acoustic energy to the internal surface of zP, a megahertz surge. Acoustic pulsation is when the fluid is born: the fluid moves as shown by arrow 130 in the figure. A velocity gradient function is generated when the acoustic impulse is dominant and provides a strong chirp locality; the rate and intensity of the delivered cleaning fluid, as indicated by arrow 13. Therefore, the eddy current 134 is caused in the characteristic part of the decay surface 117. = Yun? / Λ ~ Turbulent flow, which can improve the transport of materials into and out of the feature. The i liquid is introduced into the bottom surface of the wafer substrate. 117 This view: f and any particles that are peeled off from the feature are removed. The cavitation effect caused by the acoustic energy generated by the megahertz converter 24 which is delivered into the feature is stripped away. The arrow 128 in FIG. 4 indicates the acoustic energy generated by the megahertz ultrasonic converter 124 and the characteristic portion delivered by j into the bottom surface 11 Y of the wafer substrate. As mentioned in the description, acoustic energy 1 2 8 will cause cavitation effects to peel off particles 1 32 ° Those skilled in the art should understand that turbulence or eddy current 1 34 can help improve the transport of reactants / by-products Carry in and out of features, especially high aspect ratio features. However, direct energy is delivered into the features to provide hole effects and remove particles. Therefore, the megahertz converter is positioned parallel and perpendicular to the wafer surface, while providing direct energy to clean the substrate.

Page 17 200425231 V. Description of the invention (12) The characteristic part defined by the surface of the substrate and the chemical substances entering the characteristic part. FIG. 5 is another embodiment of the Megahertz cleaning tank of FIG. 4. Here, the wafer substrate 6 is positioned in a vertical position instead of a horizontal position. Accordingly, the megahertz converter 126 provides direct energy, such as the arrow 128 in the figure, to peel the particles 132 away from the characteristic portion defined by the bottom surface 117 of the wafer substrate 116. Megahertz Ultrasonic Transducer 24 provides acoustic impulses, as shown by arrow 130 in the figure, generates eddy currents 34 to remove particles 132 and guides the new cleaning solution into the bottom surface of the wafer substrate 丨 7 features . When the cleaning solution 112 is specifically designed for single wafer cleaning operations, those skilled in this technology should understand that when the reactant / by-product of the cleaning solution 丨 2 changes its concentration, its cleaning characteristics will Follow the same changes. That is, in a high aspect ratio feature, such as a feature on the bottom surface 117 of the wafer substrate 116, the cleaning liquid 112 in the high aspect ratio feature can clean the inside of the high aspect ratio feature. When the cleaning effect occurs, the concentration of the cleaning liquid in the characteristic part may be improved, thus changing the interface characteristics and the electric potential between the particles and the substrate surface). Can such a change ;;;;;; board? Surface 1, because the particles 132 and the substrate surface 117 are called π; Wen Ke can no longer maintain a proper or consistent electric potential (-potential). So, take a look at you, the eddy current 134 caused by Modification I: To be precise, the acoustic flow section is used to avoid particles #; 4 // and the situation where the cleaning liquid enters the feature m η and the zero is on the surface of the wafer substrate.百 Λ-ΛΛ 程 图 ’is used to explain the operation of a semiconductor substrate cleaned by a megahertz cleaning device according to an embodiment of the present invention.

I see

Page 18 200425231 V. Description of Invention (13) Law. The method starts at step 140 and provides a cleaning tank connected to two separate ultrasonic transducers. For example, reference may be made here to a cleaning tank as depicted in FIGS. 2 to 5. Next, see step 2 of this method, and immerse the wafer substrate in the cleaning solution in the cleaning tank. Those skilled in this technology should understand that the immersed wafer substrate is positioned at a megahertz ultrasonic converter substantially parallel to the surface of the substrate to be cleaned, while the second megahertz ultrasonic converter is essentially Position perpendicular to the surface of the substrate to be cleaned. In other words, megahertz ultrasonic transducers are positioned in such a way that the acoustic energy generated by each transducer and transmitted into the cleaning fluid can be properly orthogonal to each other, that is, the megahertz ultrasonic transducer is positioned At approximately right angles where they intersect each other. As mentioned previously, the cleaning solution can be a commercially available cleaning solution specifically designed for cleaning of a single wafer, and may even be deionized water. Next, referring to step 144 of the method, the wafer substrate is rotated. Here the wafer substrate can be rotated by any suitable tool known to those skilled in the art. The method flow illustrated in FIG. 6 next sees step 146, which generates sound energy in a direction perpendicular to the surface of the wafer substrate. Here, when the cleaning operation of the vertical branch and the feature is performed, in order to provide a cavity effect to remove the sub-son, the acoustic energy will directly hit the high aspect ratio feature. Then we see that the method sounds 148 ′, which produces a direction substantially parallel to the surface of the wafer substrate:. Here, acoustic energy generates eddy currents, which can improve the transport of reactants / parasites into and out of high aspect ratio features. In other words, the sonic rush can help replenish the chemical to prevent particles from re-depositing on the surface of the wafer being cleaned. Therefore, once the particles are separated, the sonic rush strengthens the detachment.

Page 19 200425231 V. Description of the invention (14) Transport of particles. Those skilled in the art should understand that the sound energy generated in the mainly vertical direction and the sound energy generated in the mainly parallel direction can be applied simultaneously or alternately or some combination in these two ways. To apply. More specifically, megahertz converters can be powered simultaneously or alternately, that is, megahertz converters can be in-phase or out-of-phase. Fig. 7A is a simplified schematic diagram of a one-megahertz ultrasonic converter for electroless plating operation obtained according to an embodiment of the present invention. Here, the electroless plating bath 150 contains a plating solution 152 ^ wafer substrate 54 is supported in the electroless plating bath 150. It is generally known to perform electroless mining by immersing a component in a plating solution. Electric clock liquid is usually composed of soluble metal salts and reducing agents. Metal salts are reduced to oxide-free surfaces. Therefore, a metal film such as copper, nickel, etc. can be deposited on the surface. However, during the metal deposition process, any bubble formation on or near the surface may cause holes in the resulting metal film. Therefore, by connecting the megahertz converter 156 to the electroless plating bath 15, the acoustic energy 160 can be introduced into the crystal through the plating solution 152 which connects the megahertz converter to the wafer substrate. The surface of the substrate 154 is rounded to disintegrate any bubbles that may occur. Therefore, a more reliable and uniform thin film can be deposited on the surface 155 of the wafer substrate 154. FIG. 7B is another embodiment of the electroless plating reaction tank of FIG. 7A. Here, the second million # ultrasonic converter is installed at a position perpendicular to the wafer substrate 154. Therefore, the megahertz converter 158 allows acoustic rush currents to be used to remove any particles on the surface of the wafer substrate 154 during the electroless plating process.

200425231 V. Description of the invention (15) Particles. That is, the acoustic pulsation generated by the megahertz converter 158 can improve the material transport of reactants and by-products on the surface of the wafer substrate 154. Those skilled in the art should understand that the electroless plating bath 15 may include the ability to recycle or replenish the plating solution 152. The input port 164 here can supply a new electroplating solution into the electroless plating bath 15o, and the output port 166 is used to remove the replaced electroplating solution. It is obvious to those skilled in the art that the plating solution can also be recycled through the input port 164 and the output port 166 to replace the one-pass system. In one embodiment, the plating solution 152 is discharged into the waste liquid collection device or the discharge device in an overflow manner. . In addition, the positions of the input port 164 and the output port 166, as well as the shape of the plating tank, may be any appropriate positions or shapes in order to smoothly perform the electroless plating process. In summary, with reference to FIG. 2 to FIG. 7B, the method and system for optimizing the cleaning efficiency of the patterned substrate described in the present invention described above and this month are described above. Relative to the surface of the wafer substrate to be cleaned, one of the megahertz ultrasonic transducers is positioned in the horizontal direction, and the other one of the megahertz ultrasonic transducers is positioned in the vertical direction. The Megahertz Ultrasonic Transducer optimizes the effect of cavitation with the characteristics of acoustic pulsations with ultrasonic acoustic energy. The megahertz ultrasonic transducer positioned in the horizontal direction, that is, it is substantially parallel to the surface of the substrate, and because it is on the same straight line as the feature, the generated acoustic energy can be directly delivered into the feature. In order to provide the hole effect. This hole effect can strip any particles that are stuck within the feature. Megahertz ultrasound converters positioned in the vertical direction, that is,

200425231

It is substantially perpendicular to the base cup 矣.. Acoustic flow meter advancing in the plane direction: sound out particles that are peeled apart parallel to the surface of the wafer substrate, and # 生机 a generates eddy currents and turbulence to remove the inside, such as high Aspect ratio ;; The feature will not stick to the table in the feature again: The chemical liquid for the particles separated in one step is added to the feature, and the second name hunting will clean the chemical cleaning action. Proficient in this technique, shower, and flow; the embodiment of the bucket in the feature can also be used in other applications: people to describe the reaction here, for example, about what is described here: description = to strengthen chemistry

Acoustic currents will enhance the transport of matter. The appetite said that the above-mentioned Dou Fu: H ί is a simple schematic diagram of a million-megahertz ultrasonic cleaning device that can be used to clean crystals: The cleaning device 2 1 8 is composed of a base 2 2 8 and a side wall 2 3 2 extending from the base. The inner cavity 220 is defined by a base 228 and a side wall 232. A package of cleaning equipment 2 18 = an acoustic energy generator 2 2 3 composed of a megahertz converter 224 attached to a resonator 226. In this embodiment, the sound energy generator 2 2 3 generates a million-megahertz ultrasonic sound energy, that is, the converter 224 is a one-megahertz ultrasonic wave.

converter. Those skilled in the art should understand that although the embodiments described herein are applied to megahertz acoustic energy, the present invention can also be applied to any other acoustic energy. The acoustic energy generator 223 is positioned at a lower corner of the cleaning device 218. Those skilled in the art should understand that the resonator 2 2 6 of the acoustic energy generator 2 2 3 is in contact with the cleaning solution. Therefore, acoustic energy can be transmitted to the wafer substrate through the cleaning solution to help the cleaning process.

Page 22 200425231 V. Description of the invention (π) Continuing to see FIG. 8A, the acoustic energy generator 22 3 is installed to generate a sound wave that mainly advances in a direction parallel to the bottom surface 22 2 a of the wafer substrate 222. This sound wave is substantially parallel to the bottom surface 22 2 a and is indicated by a straight line 234 in the figure. The extension arm 238 extends from the side wall 232 and defines a passage between the extension arm 238 and the base 228. The extension arm 238 may be any suitable length. The reflecting surface 230 is a beveled portion of the base 228. Here, the acoustic wave generated by the acoustic energy generator 223 is reflected by the reflection surface 230 and advances toward the bottom surface 222a of the wafer substrate 222. This reflected acoustic energy is indicated by the line 2 36 in the figure. Because the reflecting surface 230 has an angle, it can reflect out the substantially parallel acoustic energy waves 234 into acoustic energy waves 23 6 that advance perpendicularly toward the bottom surface 222a of the substrate. For example, the angle is such that the reflective surface 230 intersects the base 228 at about 45 degrees. Keep looking at Figure 8A. Those skilled in the art should understand that the direction of the sound waves is not related to the source of the sound energy. Therefore, the structure of the cleaning device 2 1 8 allows the components of the sound energy generator 223 to be accessed from the outside. In this embodiment, the cleaning device 2 1 8 may be a thin groove, that is, the wafer substrate 2 2 2 may be placed in a base 228 of approximately half a British pair. Those skilled in this technology should also understand that the base 2 2 8 can extend over the reflective surface 2 3 0, as shown by the part marked 2 2 a in the figure. In this embodiment, the area defined by the 228a portion of the base and the 2 3 2 a portion of the side wall is surrounded by raising a portion of the base 2 2 8 and the reflecting surface 2 3 0 An empty hole. In another embodiment, the reflecting surface 230 is adjustable to control the angle between the reflecting surface 230 and the base 228. Therefore, the movement of the reflecting surface 230 can generate reflected acoustic energy to sweep the surface 2 2 2 b of the wafer substrate 2 2 2. As a result

Page 23 200425231 V. Description of the invention (18) The acoustic energy is concentrated in the edge region of the wafer substrate 222, rather than the center region of the substrate. Therefore, the same amount of acoustic energy can be seen in the edge region of the substrate. Of course, the wafer substrate 2 2 2 here is rotatable, as shown in the figure. FIG. 8B is another embodiment of the megahertz cleaning apparatus of FIG. 8A. The cleaning device 218 includes a cleaning tank installed to clean the wafer substrate 222, and the wafer substrate 222 is immersed in the cleaning liquid contained in the internal cavity 220. A megahertz converter 224 is attached to the resonator 226 to generate sound energy that is advanced toward the reflecting surface 230. Here, the reflecting surface 230 has a convex surface and is in contact with the cleaning liquid phase in the cleaning device 2 1 8. Therefore, the acoustic energy generated by the megahertz converter 224 is reflected in a pattern different from that shown in Fig. 8A. Therefore, the convex shape of the reflecting surface 230 reflects the acoustic energy generated by the megahertz ultrasonic converter 224. Those indicated by the straight line 2 34 in the figure reflect the sound energy dispersed at different angles, as shown by the straight line 236 Marker. Therefore, the reflected acoustic energy, which is indicated by the straight line 236 in the figure, hits the surface of the wafer substrate 222 at different angles. In essence, the reflecting surface 230 receives the source wave / sound wave and spreads it into a limited area. In addition, the energy gap caused by the space between the piezoelectric crystals is eliminated by reflection of this acoustic energy. Fig. 8C is still another embodiment of the megahertz cleaning apparatus of Fig. 8A. As shown in FIG. 8A, the cleaning device 2 1 8 includes a cleaning tank containing a cleaning liquid and a base 228 extending from the side wall 232. However, as shown, the cleaning device 218 includes another different reflecting surface 230. The reflecting surface 230 has a plurality of convex surfaces for scattering the sound energy generated by the sound energy generator 223. Therefore, in the channel defined by the base 228 and the extension arm 2 38

Page 24 200425231 V. Description of the invention (19) In J, Φ and S T, w are parallel to the ruler. The direction can be changed to spread on the bottom surface 222 a of the substrate 222. Of course, the wafer substrate 222 can be rotated along its axis. It will be apparent to those skilled in the art that the rotation of the wafer substrate 222 can be provided by any suitably available rotation. For example, a substrate carrier mounted to support the wafer substrate 2 2 2 may be used to provide a rotational force. Alternatively, a rotator supporting the edge of the wafer substrate 222 may be provided to provide the rotational force. 8C, the cleaning device 218 also includes an input port 229 and an output port 231. The inlet 229 can supply new cleaning fluid into the cleaning equipment. The outlet 2 3 1 is installed to allow excess cleaning fluid to flow out of the cleaning equipment. In another embodiment, the output port 2 31 can be connected to the input port 2 2 9 through a pump to recycle the cleaning solution through the cleaning device. It is obvious to those skilled in this technology that this cleaning solution is designed for the application of cleaning a single wafer substrate. In addition, cleaning solutions for single wafer substrates are generally available from companies such as EKC Inc and Ashland Inc. Fig. 8D is still another embodiment of the megahertz cleaning apparatus of Fig. 8A. Here, the reflecting surface 230 has a concave shape. Those skilled in the art should understand that the reflected acoustic energy 2 3 6 will focus on a specific point # 2 2 a of the bottom surface 2 2 2 of the wafer substrate 2. Therefore, the reflecting surface 2 3 0 receives and focuses the acoustic energy generated by the acoustic energy generator 2 2 3. The reflecting surface 230 may have a parabolic shape to focus the reflected acoustic energy 236 onto a single point. Alternatively, the reflecting surface 2 3 0 can be made cylindrical to focus the reflected acoustic energy 2 3 6 along a straight line. Also add one more here

Page 25 200425231 V. Description of the invention (20) Point, the reflecting surface 230 is movable so that the sound energy can sweep across the entire surface of the rotating substrate. Those skilled in the art should understand that a variety of other shapes can be used to reflect the sound energy generated by the sound energy generator 223 into sound energy in different directions independent of the original direction. That is, the reflecting surface 230 may be installed to scatter, focus, or even disperse the sound energy generated from the sound energy generator 223. Fig. 9 is a simplified schematic diagram of a 1-megahertz ultrasonic cleaning device having two acoustic energy generators according to an embodiment of the present invention. The cleaning equipment 218 includes acoustic energy generators 223 and 242, which can be used as a megahertz converter. The acoustic energy generators 223 and 242 are installed to generate acoustic energy that is substantially parallel to the wafer substrate and advances in parallel at the upper surface 222b and the bottom surface 222a of the wafer substrate 222, respectively. That is, the acoustic energy generated by the acoustic energy generator 242, which is indicated by the straight lines 24a and 240b in the figure, is substantially parallel to the upper surface 222b and the bottom surface 222a of the wafer substrate 222. Similarly, the acoustic energy generated by the acoustic energy generator 223 is also substantially parallel to the bottom surface 222a of the wafer substrate 222. Continuing to see FIG. 9, the cleaning device includes megahertz ultrasonic converters 22 3 and 242, both of which are arranged substantially perpendicular to the upper surface 222b and the bottom surface 222a of the semiconductor wafer substrate 222. Through the reflecting surface 230, the sound energy 234 generated by the sound energy generating module 223 is redirected to advance in a direction perpendicular to the bottom surface 222a of the wafer substrate 222 in reality. Therefore, the acoustic energy 234 generated by the 'megahertz ultrasonic converter 223 can be used to provide a cavitation effect to peel off particles in a characteristic portion within a range defined by the bottom surface 222a. The megahertz converter 242 provides acoustic pulsation to remove the stripped

200425231 V. Description of the invention (21) The particles that have left and replenished the cleaning liquid into the characteristic part of this limited range. More detailed cleaning actions have been described in the foregoing description of Figs. 2 to 7B. Of course, the wafer substrate 222 may be rotated, as shown in FIG. 8C. Also, the cleaning equipment 2 1 8 may include overflow and recirculation capabilities, as described in Figure 8C. In another embodiment, the reflecting surface 2 3 0 of FIG. 9 can reflect the sound energy at an angle slightly different from the right angle of the bottom surface 222a of the substrate. The change in the angle at which the acoustic energy impinges on the surface of the substrate allows to reduce impedance-related swings. In one embodiment, with respect to the right angle of the substrate surface, the angle with which the difference is small is between about 3 degrees and about 6 degrees. This quoted angle reduces the change in impedance due to wafer run-out (shake) during rotation. In another embodiment, the acoustic energy generator 2 2 3 is automatically adjustable. FIG. 10A is a simplified schematic diagram of a megahertz cleaning device installed to clean opposite sides of a wafer substrate obtained according to an embodiment of the present invention. The cleaning equipment 218 includes acoustic energy generators 223 and 242a, which are installed to provide acoustic energy to opposite sides of the wafer substrate 222. The acoustic energy generated by the acoustic energy generator 223 is reflected from the reflective surface 230 to clean the bottom surface 222a of the wafer substrate 222. The acoustic energy generator 242a is installed to provide acoustic energy to the upper surface 222b of the wafer substrate 222 to help clean the upper surface 222b of the wafer substrate 222. Here, the sound energy generator 242 a. Is installed to generate sound energy, as indicated by the straight line 240b in the figure, this sound energy is only at a small angle with respect to the upper surface 222b of the wafer substrate 222. . In one embodiment, the angle intersected by the acoustic energy 240b and the upper surface 222b is between about 0 degrees and about 5 degrees. Those skilled in the art should know that the sound energy 240b

Page 27 200425231 V. A part of the description of the invention (22) will be reflected from the upper surface 222b, as shown by the line 246 in the figure. Therefore, the reflecting surface 2 4 4 a may be provided at a position capable of reflecting the reflected acoustic energy 246 back to the upper surface 222b, as indicated by the straight line 248 in the figure. Of course, this reflected acoustic energy loses some kinetic energy each time it is reflected, however, the increased acoustic energy will help the wafer substrate 2 2 2 to be cleaned. FIG. 10B is a simplified schematic diagram of another embodiment of the megahertz cleaning apparatus of FIG. 10A. Here, the cleaning device 2 1 8 provides three acoustic energy generators 2 23, 242a, and 242b. The acoustic energy generator 223 provides acoustic energy to the bottom surface 222a of the wafer substrate 222. Similarly, the acoustic energy generator 242b also provides acoustic energy to the bottom surface 222a of the wafer substrate 222. The acoustic energy generator 242a is installed to provide acoustic energy to the upper surface 222b of the wafer substrate 222, as discussed above with reference to FIG. 10A. The acoustic energy generator 242b generates acoustic energy 240a, and the acoustic energy advances in a direction at a small angle with the bottom surface 22a of the wafer substrate 222. In one embodiment, the angle between the acoustic energy 240a and the bottom surface 222a is between about 0 degrees and about 5 degrees. It is added here that the acoustic energy 240a can be reflected from the bottom surface 222a of the substrate, as indicated by the line 2 50 in the figure. Therefore, the reflecting surface 244b may be disposed at a position capable of reflecting the reflected acoustic energy 250 back to the bottom surface 2 2 2a of the wafer substrate 222 as indicated by the straight line 252 in the figure. Those skilled in the art should understand that the reflective surface 2 3 0 shown in the figure has a convex shape, and the reflective surface 2 3 0 may have any suitable shape, including the shapes discussed above. Therefore, in one embodiment, the acoustic energy generators 223, 242a, and 242b are also megahertz converters. After cleaning

200425231 V. Description of Invention (23) In the process of (23), the wafer substrate 222 can also rotate along its axis. The cleaning equipment 2 18 can be installed to provide overflow and recirculation capabilities, as discussed with reference to Figure 8C. FIG. 11 is a flowchart illustrating an operation method for cleaning the surface of a semiconductor substrate by using acoustic energy according to an embodiment of the present invention. The method starts at step 260, where the first converter generates acoustic energy that proceeds in a direction substantially parallel to the surface of the semiconductor substrate. For example, the acoustic energy generated here may be the acoustic energy generated by the acoustic energy generator 223 in FIGS. 8A to 8D, FIG. 9, FIG. 10A, and FIG. 10B. Looking next at step 262 of the method, the direction of advancement of the acoustic energy generated by the first converter is changed to advance in a direction substantially perpendicular to the surface of the wafer substrate. Here, a reflecting surface, such as the reflecting surfaces discussed in FIGS. 8A to 8D, FIG. 9, FIG. 10A, and FIG. 10b, can be used to change the forward direction of acoustic energy. We should understand that sound energy can be focused, scattered, or even even-sentenced. Therefore, the reflecting surface is mainly used to change the sound energy from the origin of the sound energy into an unrelated direction. In addition, the reflective surface can be adjusted or moved so that acoustic energy can sweep across the surface of the wafer substrate to be cleaned. Continue to see step 2 6 4 of the method of FIG. 11, and the second converter generates sound energy advancing in a direction substantially parallel to the surface of the semiconductor substrate. Here 'This second converter can provide acoustic pulsation to clean the wafer substrate surface more effectively. Those skilled in this technology should understand that the acoustic energy generated by the second converter can interact with the surface of the semiconductor substrate. With a small angle of forward direction 'reference is as discussed in the foregoing FIG. 10A and FIG. 10B. In addition, a third acoustic energy converter may be provided to guide the acoustic energy to the opposite surface of the substrate surface cleaned by the acoustic energy generated by the second converter.

Page 29 200425231 V. Description of the invention (24) In summary, the above description of the present invention, referring to FIGS. 8A to 11, describes a method and a system for optimizing the cleaning efficiency of a semiconductor substrate. This cleaning device reduces the dead zone by changing the direction of the sound waves generated from the sound energy generator. This reorientation effect is provided by a reflective surface configured to reflect acoustic energy toward the surface of the wafer substrate to be cleaned. Multiple converters can be included to increase cleaning efficiency. In one embodiment, two converters are provided that are disposed substantially perpendicular to the surface of the wafer substrate. In both cases, the transducer generates acoustic energy in a direction substantially parallel to the surface of the wafer substrate. However, one of the acoustic energy flows is redirected by the reflective surface to be perpendicular to the wafer substrate. Sound energy moving in the direction of the surface. The reflecting surface can be made of any material that can coexist with this cleaning solution and can reflect acoustic energy. For example, the material of this reflective surface can be stainless steel, quartz, Teflon, polypropylene, silicon carbide, or other materials that can be used in this system to coexist with cleaning chemicals. In another embodiment, the reflecting surface is mounted to be movable along an axis to which the reflecting surface is connected. Therefore, the acoustic energy can be swept across the surface of the wafer substrate to disperse the acoustic energy, and even when the wafer substrate is rotated, the acoustic energy can be swept across the entire substrate surface. In addition, the embodiments described herein allow a relatively thin film to be deposited during an electroless plating operation. During the electroless plating operation, through the application of 1 million Hz, the sun wave sound month b, the generation of bubbles in the target that undergoes the electroless plating operation can be controlled. The cavitation effect due to the ultrasonic acoustic energy transferred to the plating solution effectively removes air bubbles near the surface of the target, thereby greatly reducing voids in the deposited film. Although, in order to achieve the purpose of clear understanding, the present invention

200425231 V. Description of Invention (25) Some detailed descriptions have been made, however, it is obvious to those who are skilled in this technology Z ί: I: It is still possible to implement something in the field of patent application park declared, therefore, what is described here The given embodiments are considered for illustrative purposes, and are not intended to limit the present invention to only π. The ugly situation is: to present it with the details given here, and it can be done in the field of patent application in the present invention. Departing from the originals and / or steps does not imply any special "falling within the scope of the patent application. Interesting in the scope of patent applications. #Working sequence, unless it has already been done, Xinshubaixuan page 31 200425231

Five diagrams [Simplified description of the diagram] Figure 1A-Schematic diagram of a million-megahertz ultrasonic wave cleaning system for a whole batch of wafers. Schematic diagram of one of the sonic cleaning equipment obtained in the embodiment; 1 of the Megahertz ultrasonic intent FIG. 3 is another diagram of FIG. 2—the diagram of the megahertz ultrasonic cleaning equipment of the embodiment 4 is according to the present invention ^ ^ ^ #M # 月 一 贝 施 例 Million Hz super βμ 7η [female i: £ ti 丨 n enlarged cross-sectional view of the device; Figure 5 corresponds to Figure ± i order a Limin · port 4 million MHz Another embodiment of the ultrasonic cleaning tank is not considered ►Circle, = 6 series private picture, which is used to explain that according to one embodiment of the present invention, through the megahertz ultrasonic cleaning .. First, there are four operation methods for washing a semiconductor substrate. Figure 7A f is a simplified schematic diagram of a one-megahertz ultrasonic converter for electroless plating operation obtained according to an embodiment of the present invention; Figure 7B is A schematic diagram of another embodiment of the electroless plating reaction tank corresponding to FIG. 7A; FIG. 8 A 1 is obtained according to an embodiment of the present invention A simplified schematic diagram of a megahertz cleaning equipment capable of generating acoustic energy for cleaning wafer substrates; FIG. 8B is a schematic diagram of another embodiment of the megahertz cleaning equipment corresponding to FIG. 8a; 8C series corresponds to yet another megahertz cleaning equipment of FIG. 8A

200425231 The diagram briefly illustrates the embodiment; FIG. 8D is a schematic diagram of still another embodiment of the megahertz cleaning device corresponding to FIG. 8A; FIG. 9 is a diagram having two obtained according to one embodiment of the present invention. A simplified schematic diagram of a 1-megahertz ultrasonic cleaning device for an acoustic energy generator; FIG. 10A is a megahertz ultrasonic cleaner installed on the opposite side of a wafer substrate and installed to clean the opposite side of a wafer substrate obtained according to an embodiment f of the present invention. Simple schematic diagram of the equipment; FIG. 10B is a simplified schematic diagram of another embodiment of the megahertz cleaning device corresponding to FIG. 10A; FIG. 11 is a flowchart for explaining the application of acoustic energy according to an embodiment of the present invention The operation method for cleaning the surface of a semiconductor substrate. Description of component symbols: 1 0 0 ~ cleaning tank 1 0 2 ~ wafer holder 104 ~ converter 106 ~ cleaning tank I 0 8 ~ carrier 10 9 ~ wafer II 0 ~ megahertz ultrasonic cleaning equipment 11 2 ~ Cleaning solution 114 ~ carrier 116 ~ wafer substrate

200425231 Schematic description 117 ~ bottom surface of wafer substrate 11 8 ~ side wall of cleaning tank 120 ~ base 122 ~ side wall of cleaning tank 124 ~ megahertz converter 124a ~ converter element 124b ~ resonator element 126 ~ Mhz ultrasonic converter 126a ~ Converter element 126b ~ Resonator element 128 ~ Sonic energy 1 3 0 ~ Sonic current 1 3 2 ~ Particle 1 3 4 ~ Spoiler or eddy current 1 50 ~ Electroless plating tank 152 ~ Plating solution 154 ~ Wafer substrate 1 5 5 ~ Wafer substrate surface 1 5 6 ~ Megahertz ultrasonic conversion to 158 ~ Megahertz ultrasonic converter 160 ~ Sonic energy 162 ~ Sonic current 1 6 4 ~ Input Port 1 6 6 ~ output

Page 34 200425231 Brief description of the drawing 2 1 8 ~ megahertz ultrasonic cleaning equipment 2 2 0 ~ internal cavity 2 2 2 ~ wafer substrate 222a ~ wafer substrate bottom surface 222b ~ wafer substrate upper surface 223 ~ acoustic Energy generator 224 ~ Mhz ultrasonic converter 226 ~ Resonator 228 ~ Base 228a ~ Extended part 229 ~ Input 230 ~ Reflective surface 231 ~ Output 2 3 2 ~ Side wall 232a ~ Side wall 232b ~ Side wall 234 ~ Sound energy 2 3 6 ~ Reflected sound energy 238 ~ Extended arm 240a ~ Sound energy 240b ~ Sound energy 242 ~ Sound energy generator 242a ~ Sound energy generator 242b ~ Sound energy generator

Page 35 200425231 Schematic description 244a ~ Reflective surface 244b ~ Reflective surface 2 4 6 ~ Reflected acoustic energy 248 ~ Re-reflected acoustic energy 2 5 0 ~ Reflected acoustic energy 252 ~ Re-reflected acoustic energy

Page 36

Claims (1)

Body substrate Half of the item Forward operation Half of the item Forward operation Half of the item Semiconductor The cleaning method of the acoustic conductor substrate, the operation and generation of acoustic energy are performed simultaneously. The method of cleaning the conductive substrate, the operation and generation of acoustic energy are performed alternately. A method for cleaning a conductor substrate, the direction of the substrate surface can be reflected from a reflective surface to the same as the 6th in the scope of patent application 200425231 VI. Scope of patent application1. A method for cleaning a semi-s conductive substrate, which includes the following operations: a) generating / mouthing sound energy advancing in a direction perpendicular to the surface of the semiconductor substrate; and generating / mouthing only Acoustic energy traveling in a direction substantially parallel to the surface of the semiconductor substrate. β +2 ,. # If / & please 3 The cleaning method of the semiconductor substrate in the first item of the patent, 800 ** The megahertz energy generated by a megahertz converter. I degree king Θ7 said Ma f Λ Xia Ru, Shen Λ patent scope of the first method of semiconductor substrate cleaning method, including the following operations: /) immersing-semiconductor substrate-cleaning solution contained in the cleaning tank, And b) rotating the immersed semiconductor 4 · as claimed in the first scope of the patent application, it generates sound energy that moves in a substantially perpendicular direction and substantially parallel direction 5 · as in the first scope of the patent application, where it generates substantially vertical The sound energy of Fang Beizhen moving in parallel direction Among them, generating an operation substantially parallel to the acoustic energy includes: placing a portion of the surface of a semiconductor substrate. Method for cleaning semiconductor substrate 200425231 6. The scope of applying for patents includes the following operations: Adjust the angle of the reflecting surface relative to the origin and source of the sound energy. 8 a semiconductor substrate cleaning equipment, a) a pedestal; the side wall is substantially perpendicular b) at least one side wall extending from the pedestal straight to the pedestal; c) a 1 megahertz A sonic converter fixed on the base; and d) — the first megahertz ultrasonic converter, fixed on the side wall; wherein the first megahertz ultrasonic converter is substantially perpendicular to the second megahertz ultrasonic converter. < 9 · The semiconductor substrate cleaning apparatus according to item 8 of the patent application scope, wherein the base has a shape selected from the group consisting of a square, a circle, and a rectangle. 10. The semiconductor substrate cleaning equipment according to item 8 of the scope of patent application, is designed to contain a cleaning liquid in a cavity defined by the base and at least one side wall. 11 · If the semiconductor substrate cleaning equipment with the scope of application for patent No. 丨 0, further includes: A semiconductor substrate is immersed in the cleaning solution, and the semiconductor substrate is supported by a substrate support; a surface of the semiconductor substrate is positioned substantially parallel to a surface of the first megahertz ultrasonic converter, Moreover, the surface of the semiconductor substrate is positioned in an orientation substantially perpendicular to a surface of the second megahertz ultrasonic converter. 1 2 · If you apply for semiconductor substrate cleaning equipment in the scope of patent application 丨 丨, Page 38 200425231 6. The scope of patent application Among them: the first megahertz ultrasonic converter is used to provide the features formed on the surface of the semiconductor substrate based on the hole effect ^, and the second The megahertz converter is used to provide a feature formed on the surface of the semiconductor substrate based on the purpose of acoustic rush current. 1 3 · The semiconductor substrate cleaning equipment according to item 8 of the scope of patent application, wherein. One of the first megahertz ultrasonic converter and the second megahertz ultrasonic converter is used to change a direction of a corresponding sound energy generated to be irrelevant to a source of the corresponding sound energy. P 1 4 · A semiconductor substrate cleaning system, including: a)-a cleaning tank having an internal cavity defined by a base and a side wall extending from the base with a small side wall; Amount of liquid in the internal cavity; i b) — a semiconductor substrate support for supporting and rotating the semiconductor substrate along the axis of the half, the semiconductor substrate support is also used to radiate = the internal space of the cleaning tank The semiconductor substrate is supported and rotated in the cavity;% c) a first megahertz ultrasonic converter, the upper surface of the megahertz ultrasonic converter connected to the base is substantially parallel to the bottom surface of the =; > ® Substrate d) A first megahertz ultrasonic converter, connected to each other; at least-the side wall of the heart, where the first megahertz ultrasonic converter is used to generate sound energy is The square f is perpendicular to the bottom surface of the semiconductor substrate = the entrance; and the second megahertz ultrasonic converter uses a different sound generator to generate sound, and the Lingmin a is substantially parallel to the bottom of the semiconductor substrate. μ 卓 月 b a | surface orientation Into. Page 39 200425231 The 14th item of the feature is straight on the half-effect energy. The 14th item of the row is on the half-flow energy. The 14th item of the part of the ministry. The sound energy advances the semiconductor substrate bottom 16 · If applied, the sound energy advances the bottom surface of the substrate 17 · If applied, the sound wave converter is in phase 18 · If applied In the system, the sonic converter has a patent feature of one million patents that is suspended from the patented surface of the cavity, and has a patent feature of flat surface for the acoustic shock. Patent Scope Item 14 One Megahertz Ultrasonic Operation. The cleaning of the semiconductor substrate is the direction of the bottom surface of the conductor substrate, and is used to peel off particles deposited in the portion. The cleaning of the semiconductor substrate is based on the orientation of the bottom surface of the conductor substrate to supplement the concentration of liquid formed in the semiconductor. Converter for semiconductor substrate cleaning and the second megahertz cleaning converter for semiconductor substrate and the second megahertz 19 · If the cleaning system of the semiconductor substrate according to item 14 of the patent application, 'Li Erzhong, the sound energy generated by the second megahertz ultrasonic transducer is facing a reflection related to the base The reflecting surface is used to guide the acoustic energy toward a surface of the semiconductor substrate. 20 · The semiconductor substrate cleaning system according to item 19 of the patent application scope, wherein the reflective surface has a shape selected from the group consisting of a substantially flat surface, a concave surface, and a convex surface. Page 40