TW200424778A - Photolithography process and rework process of photoresist - Google Patents

Abstract

A photolithography process is described. A thin film having a hydrophilic surface is formed over a substrate, and a first photoreisit layer is formed over the thin film. A solvent is spin onto the first photoreisit layer to remove a portion of the first photoreisit layer, and the remained first photoresist layer has a thickness lower than 10 angstrom. A second photoresist layer is formed over the remained first photoresist layer, and the second photoresist layer is patterned with an exposing process and a developing process. Since the thin film is covered by the thin first photoresist layer for relaxing hydrophilic, the second photoresist layer peeling will not occur.

Description

200424778 V. Description of the invention (1). The invention belongs to. The invention relates to a semiconductor process, and in particular to a lithography process and a photoresist layer in a semiconductor process. With the increase of the integration degree of the integrated circuit, the component size of the entire integrated circuit must also be reduced accordingly. The most important one in the semiconductor process is the lithography process, which is related to the metal-oxide semiconductor (Metal-Ohde-Semiconductor; Mos) device structure, such as the pattern of each layer of thin film (Pattern), and doped Areas with impurities (Dopants) are determined by this step of lithography. In the M-shirt manufacturing process, in order to avoid that part of the light that is not covered by the photoresist layer and the light during the exposure will be reflected by the surface of the wafer and cause constructive and destructive interference with the incident light, it is usually under the photoresist layer. Form an anti-reflective layer to absorb the light that is not used in the photoresist layer. There are many choices of materials used as the anti-reflection layer. In addition to the anti-reflective layer made of organic materials, many Inorganic materials can also be used as the material of the anti-reflection layer. ; ,,,; When using an antireflection layer made of an inorganic material, there is a problem that the photoresist layer is easily peeled. This is because the surface of the anti-reflection layer of inorganic material is hydrophilic, but the photoresist layer itself is a hydrophobic material, so the adhesion between the two is poor, which will make subsequent When the development step is performed, it is very easy for the photoresist layer to peel off. In particular, when the photoresist layer is reworked, the peeling of the layer will become more serious. Page 5 200424778

V. Description of the invention (2) Development _. Content A lithography process to solve the problem that the photoresist layer is prone to peel. Therefore, the purpose of the present invention is to provide information on the lithography process using the anti-reflection layer. It is a further object of the present invention to provide a solution to the problem that the surface of the radiation layer is peeled off during the heavy-duty process known in the photoresist layer. A heavy-duty manufacturing process for a photoresist layer. Among them, the photoresist layer is particularly resistant to anti-reflection. The present invention proposes a lithography process, which is firstly a thin film: the surface of the thin film exhibits hydrophilic properties.

The anti-reflection layer is, for example, a silicon nitride layer, a silicon oxide layer, a silicon layer, or a combination thereof. Next, a first photo-resistive sound is formed on the sheet. After that, a solvent is applied to the first photoresistor 7 ^ by the spin coating method, except for a portion of the thickness of the first photoresist layer, and the remaining-^ ^ degree is about ί Angstrom or less. Subsequently, only the second photoresist layer I ′ is left before the remaining photoresist layer-the exposure process and a display & process to pattern the second photoresist layer. ′ 贝 〜 ^ 程, + 飨 明 proposed a photoresist layer substrate, where a thin film has been formed on the substrate, this thin hydrophilic property: where the film is, for example, an anti-reflective layer.

Silicon layer, -silicon oxide layer, silicon oxynitride layer or a combination thereof: 2 2 = Formation-Photoresist layer 'After the film is removed by wet stripping, the surface of the exposed film will be more: 卞After removing the photoresist layer described above, it is formed on the film—the first photo ::. After that, a solvent is applied to a by spin coating, and then a layer is applied to remove

11151twf.ptd Page 6 200424778 V. Description of the invention (3) Part of the thickness of the first photoresistive layer, and the remaining first photoresistive sound is about 10 angstroms or less. Then, a second photoresist layer is formed at the remaining first thickness. Formed on Lexian resist layer * As the present invention covers a thin first photoresist layer on the film to reduce the hydrophilic nature of the film surface, it is possible to avoid peeling off of the second photoresist layer formed later. ', Shape = is in the heavy-duty manufacturing process of the photoresist layer.' Since the surface of the gadolinium after removing the photoresist layer will be more hydrophilic, the present invention covers a thin layer of the first photoresist layer, that is, it can Make subsequent formation on its surface = better adhesion of photoresist layer. # 2 Let the above and other features, features, and advantages of the present invention be more clear " 'A preferred embodiment is given below, and in conjunction with the attached drawings, the detailed description is as follows: # 实 .. 处 方式 第Figures 1A to 1E show schematic cross-sectional schematic views of a lithographic process according to the present invention. With reference to Figure 1A, the first task is: ^ 一 Λιέίππ L.TT/ and space A thin film 102 is formed on the substrate 10, and its surface is hydrophilic. Α 士 赛 & a 丨 & ^ # In the present embodiment, this film 102 is an anti-reflection layer, and its subsequent system is used to absorb ΛΑ k "you" water and exposure Absorbed by the photoresist layer = eg: ί: the generation of waves. Here, the anti-reflection layer 102 is formed by a chemical vapor deposition process, and the anti-reflection layer 102 is, for example, a disordered silicon layer, a gas-assisted dielectric layer, and a wide range of dielectric materials Layer, silicon nitride oxide layer or bean group. Because the anti-reflection layer 102 is using the name of the wind 4 ^ ^ χ X 疋 八, and the mouth-its in the evening "said L Xuecai phase deposition method Formed, therefore, when the surface of the s substrate has a pattern with different distances from low to high, the anti-reflection layer

200424778 V. Description of the invention (4) 102 can be conformally covered on its surface. However, since the surface of the anti-reflection layer 102 is hydrophilic, in this way, the subsequent photoresist layer formed on the surface is easily peeled. Please refer to FIG. 1B. A photoresist layer 10 is formed on the antireflection layer 102, and a photoresist layer 10 can be formed between the antireflection layer 102 and the photoresist layer 106. Layer 104, this adhesion promoting layer 104 can replace the hydrophilic group on the surface of the antireflection layer 102 with a hydrophobic group to promote the adhesion between the antireflection layer 〇〇2 and the photoresist layer 106, the material For example, hexamethyldisilazane (HMDS). However, the problem of peeling of the photoresist layer cannot be completely improved by the function of the adhesion promoting layer 104 alone. In other words, the photoresist layer is still peeled in a local area. Referring to FIG. 1C, a part of the thickness of the photoresist layer 106 is removed, and a thin layer of the photoresist layer 106a is retained, and the thickness of the remaining photoresist layer 106a is less than 10 angstroms. In a preferred embodiment, a method of removing a part of the thickness of the photoresist layer 106 is, for example, applying a solvent on the photoresist layer 106 by using a spin coating method to remove the photoresist layer 106. Part of the thickness, the above solvents may be ether ester solvents, ketone solvents, or alcohol solvents, such as propylene glycol monomethyl ether acetate, monomethyl ether propylene glycol, or N-methyl-2-pyrrolidone, and the above Spin coating the solvent on the photoresist layer 〇06 can be beneficial in a time-controlled manner so that the photoresist layer 〇06a that is retained is only a few angstroms in thickness. In the present invention, the step of coating the solvent on the resist layer 106 by using the spin coating method may be on the same machine as the coating step of the photoresist layer. At this time, the remaining photoresist layer 106 & Surface is hydrophobic

11151twf.ptd Page 8 200424778 V. Description of the invention (5) Hydrophobic, so when the photoresist layer is subsequently formed on the surface, the problem of peeling of the photoresist layer can be prevented. Please refer to the figure (ii). 'Another photoresist layer 110 is formed on the photoresist layer 106a, and the photoresist layer 106a and the photoresist layer 110 can be more shaped. ^ Another adhesion promotion layer 108 is used to promote the two Adhesion. In addition, according to FIG. 1E, an exposure process and a development process are performed to pattern the photoresist layer 110 to form a photoresist pattern 1103. Here, because of the thought of light, the surface of the above structure has been processed into a hydrophobic resist layer 110 and the above structure will have better adhesion. The photoresist layer nQ is used for patterning steps (exposure and display shirt). ), The photoresist pattern 11 oa will not be peeled. Long photoresistance: The value mentioned is the 'knowledge in the lithography process, if the photoresist layer must be peeled off, the problem will be even more]. If the photoresist layer is to be displayed, the previous photoresist must be light: The reflective layer under the layer will be exposed, and the steps of this, and = will make the anti-reflective layer more hydrophilic. And the photoresist layer should be wet-peeled: : Pro-parent ::: more hydrophilic, so it will make heavy industry =

Poor Moon also proposed a heavy industry process without barriers. The anti-reflective fine surface above Γ Γ was previously "

1 into: photoresist layer _, and anti-reflection reading and photoresistance σ to form an adhesion promotion layer 104, this adhesion promotion layer J

200424778 V. Description of the invention (6) is used to promote the adhesion between the antireflection layer 102 and the photoresist layer 106. Referring to FIG. 1C, the solvent is applied on the photoresist layer 106 using a spin coating method to remove a part of the thickness of the photoresist layer 〇06, while retaining a thin-layer photoresist layer 106a. The thickness of the remaining photoresist layer 106a is about 10 angstroms. Then, referring to FIG. 1D, another photoresist layer 110 is formed on the photoresist layer 106 and a further adhesion promoting layer may be formed between the photoresist layer 106a and the photoresist layer 110. 108, to promote the adhesion between the two. Please refer to FIG. 1E. After that, the exposure and development processes can be performed again to pattern the photoresist layer 110 and form a photoresist pattern 110. —As can be seen from the above description, since the present invention covers the anti-reflection layer 02 with a thin layer of photoresist layer 1063, so that the originally hydrophilic surface becomes ^ 7, therefore, a photoresist is subsequently formed on the hydrophobic surface. In the case of the layer, the adhesion between the photoresistors is better, so the problem of peeling off the photoresist layer is taken as an example. The film with a hydrophilic surface is in the antireflection layer reflection layer. However, it is not intended to limit the present invention to only be applied to anti-restricted inventions, which have been disclosed above in a preferred embodiment. However, it is not intended to: within the scope, when it can be made a little bit more: with the spirit of retouching unknown. Among them, the one defined by the patent scope shall prevail. Protection of Ming

Page 10 200424778 Brief Description of Drawings Figures 1A to 1E are schematic cross-sectional views of a lithography process according to a preferred embodiment of the present invention. [Illustration of Graphical Symbols] 100: substrate 102: thin film (anti-reflection layer) 104, 108: adhesion promoting layer 106, 106a, 110: photoresist layer 110a: photoresist pattern

11151twf.ptd Page 11

Claims (1)

200424778 6. The scope of the application for a patent is a process on a lithographic substrate. The formation of a substrate includes: a thin film. The surface of the thin film is hydrophilic. The first photoresist is formed on the special film after removing the first. The first photoresist layer is subjected to an exposure process to block the layer. 2 · If the thickness of the first photoresist layer is less than 10 3 · If the thickness of the first photoresist layer is applied, apply. The profit range is partially thick. The first photoresist layer 4 is partially thick. As in the patent application, the film includes an anti-reflection layer. The scope of the patent application includes silicon nitride, before the patent scope of the photoresist layer is applied. 5. If the material of the film is 6. If it is part of the thickness of the first layer; a second photoresist layer is formed on a photoresist layer; and a development Process to pattern the lithographic process described in item 1 of the second light, wherein the lithographic process described in item 1 of the first photoresist layer is retained after removal, and the method of removal is It is a photolithography process according to item 1 by using a spin coating method to dissolve a portion of the first photoresist layer, wherein the thin photolithography process according to item 1, wherein the thin oxide Silicon or silicon oxynitride. The lithography process described in item 1, wherein the forming includes forming an adhesion promotion on the film. The lithography process described in item 丨 of the patent application scope, wherein 11151twf.ptd Page 12 200424778 6. Scope of patent application Before the formation of the second photoresist layer on the first photoresist layer, the method further includes forming an adhesion promotion layer on the remaining first photoresist layer. 8 · —A heavy-duty manufacturing process for a photoresist layer, including: providing a substrate, a thin film has been formed on the substrate, the thin surface is hydrophilic, and a photoresist has been formed on the film, and the photoresist layer is removed to expose After exiting the film; shifting to form a first photoresist layer on the film; removing a portion of the thickness of the first photoresist layer; and forming a second 9. on the remaining first photoresist layer. The layer of the photoresist layer described in the patent application No. 8. Wherein, after removing a part of the thickness of the first photoresist layer, the thickness of a photoresist layer is less than 0 angstrom. The following 10th process of removing the photoresist from the photoresist described in item 8 of the scope of application for the first photoresist layer is to apply a solvent to the first photoresist layer. , To: c transfer coating thickness. Coincidentally, the first photoresist layer 11 The photoresist sound according to item 8 of the patent application range, wherein the film includes an anti-reflection layer. θ Heavy industry process, 1 2 · Photoresistor as described in item 8 of the scope of patent application where the material of the film includes nitride stone, gasified stone or H heavy industry process, 1 3 · As described in item 8 of patent scope Photoresist layer = silicon. · The method of removing the photoresist layer to expose the film.疋 Spear】 wet peeling 14. The heavy-duty manufacturing process of the photoresist layer as described in item 8 of the scope of patent application, page 13 200424778 6. The scope of the patent application, which is included in the first photoresist layer before it is formed An adhesion promoting layer is formed on the film. 1 5. The rework process of the photoresist layer according to item 8 in the scope of the patent application, wherein before the second photoresist layer is formed on the remaining first photoresist layer, the first photoresist is retained An adhesion promoting layer is formed on the resist layer. 11151twf.ptd Page 14