TW200423209A - Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device in which it is installed - Google Patents

Abstract

The present invention provides a wafer holder for semiconductor manufacturing device, and a semiconductor manufacturing device in which it is installed, which can increase the thermal uniformity on the wafer holding surface for the wafer holder containing wafer loading surface. In the wafer loader containing wafer loading surface, the diameter a of the wafer holding surface for the wafer loader is set smaller than the diameter b of the surface on the opposite side of the wafer holding surface, and the temperature distribution on the wafer surface is set within ± 0.5%. Furthermore, if it is set as b-a ≥ 50 μ m, the temperature distribution is set within ± 0.4 %. The wafer loader is preferably the ceramic heater.

Description

200423209 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an etching device, a sputtering device, a plasma cvd device, a low-voltage plasma CVD device, a metal CVD device, an insulating film CVD device, and a low dielectric. Low-K CVD equipment, MoCVD equipment, gas release equipment, ion implantation equipment, coating and development equipment, and other semiconductor manufacturing equipment wafer carriers, and then load the processing reaction chamber, semiconductor manufacturing equipment . [Prior art]. Previously, semiconductor process towels have been subjected to various processes, such as film formation treatment and sacrifice treatment, for semiconductor substrates (crystal wafers), which are the objects to be processed. In a semiconductor manufacturing apparatus for processing a semiconductor substrate as described above, a ceramic heater for heating the semiconductor substrate is used for fixing the semiconductor substrate. In this way, other ceramic heaters are disclosed in, for example, Japanese Patent Laid-Open No. 4-π〗%. The Tao Liang heater disclosed in Japanese Unexamined Patent Publication No. 4-78138: ::: a heater section made by Taumman, which is embedded with a resistance heating element and is installed in Guyi ', and is provided with a wafer heating surface; convex support The part is arranged on the second heat of the force: a surface other than the wafer heating surface of the part forms an air-tight seal between the container and the container; Sexually exposed to the inner space of the container. In this invention, though? Mugan + Second, see the pollution or enforcement efficiency visible in the heaters of the eighth W, that is, metal heaters ^, θ "-, improvement of exemption from drought and drought, but for semiconductor substrates Could not be involved. However, when the temperature distribution of the half-body substrate is subjected to various processes, it is very important because it is closely related to the yield. Here ’, for example, in Japanese Patent Laid-Open No. U8664,

O: \ 91 \ 91658.DOC 200423209 Ceramic heater for temperature of ceramic substrate. In this invention, if the temperature difference between the highest temperature and the lowest temperature on the reverse side is within a few%, it can be considered durable. Qiao sigh / 0 = =, semiconductor substrates in recent years are advancing in size. For example, Twelve Twelve and Twelve have moved forward from 8:12 to 12 pairs. Along with the production of the semiconductor substrate, the temperature of the heating surface (holding surface) of the semiconductor substrate of the Hungarian porcelain heater is recognized to be within ± 1.0%, and furthermore, it is expected to be within the city wish. In recent years, The width of the wiring formed on the Japanese Yen is further miniaturized, and this is accompanied by a step-by-step increase in the requirement for the uniformity of the wafer surface temperature: for example, 'coating anti-remainder on the wafer by spin coating, etc. In the case where the film is hardened, or after the anti-knock film is developed, the hardening is performed, for example, heat treatment at 200 ° C, and the temperature distribution of the wafer is required to be within ± 0.3%, and more preferably Temperature distribution within ± 0.1%. [Patent Document 1] Japanese Patent Laid-Open Publication No. 041047813s [Patent Literature 2] Japanese Patent Laid-Open Publication No. 2001-118664 [Summary of Invention] (Problems to be Solved by the Invention) The present invention is made in view of Developed by the above issues. That is, an object of the present invention is to provide a wafer carrier for a semiconductor manufacturing device and a semiconductor garment set thereon, which can improve the uniformity of heat on a wafer holding surface. (Means for Solving the Problem) The wafer carrier for a semiconductor manufacturing device of the present invention is characterized in that the diameter a of the wafer holding surface of the wafer carrier is smaller than the diameter b of the surface opposite to the wafer holding surface of the wafer carrier. Moreover, the above diameter dagger

O: \ 91 \ 91658.DOC 200423209 is preferably larger than the diameter a by 50 μηι or more. The wafer carrier is preferably a ceramic heater having a resistance heating element formed inside or on its surface. In the semiconductor manufacturing apparatus equipped with the above-mentioned wafer carrier, the temperature of the wafer, which is the object to be processed, becomes uniform compared to the previous temperature, so that the semiconductor can be manufactured by increasing the utilization rate of raw materials. According to the present invention, by setting the diameter a of the wafer holding surface to be smaller than the diameter b 'of the surface on the opposite side from the wafer holding surface, a wafer carrier and a semiconductor manufacturing apparatus having excellent heat uniformity can be provided. In addition, by setting 50 °, it is possible to further improve the horse uniformity. The semiconductor manufacturing device of the wafer carrier which is loaded with such a shock / the first phase of the wafer carrier tb 'The temperature distribution of the wafer carrier has also become more uniform = α This can show the characteristics or yield, reliability or reliability of the semiconductor. 〇 [Implementation] The temperature distribution of the wafer holding surface should be set to within 5% of the edge. As indicated by ^ 1_, if the diameter a of the wafer holding surface of the wafer carrier 1 is set to be smaller than The diameter b on the opposite side is sufficient. …, The wafer carrier uses a resistance heating element (not shown) inside the wafer or the wafer holding surface (4 or 卩), ... However, the right is that the diameter a is also greater than t, and the 々u escape from the wafer holding surface is Γ. It is found that the heat distribution is easy to become uneven. If the gate m 'temperature of the wafer holding surface is partially lower than the temperature of the wafer on which the wafer is mounted, the temperature of the two-circle holding surface is partially reduced, which is formed during the film formation process:之 尽 度 或 力量 # 得; ί; Beginning-as in the case of etching treatment, blind,-one. Moreover, in Example 7, the etching rate became non-uniform.

O: \ 91 \ 91658.DOC 200423209: Although the smaller the temperature distribution of the two-round surface is, the better, but the inner plate ^ cloth needs to be w uniformity, and then it is required to pay for this uniformity. It is found that if the above diameter a is smaller than the above-mentioned diameter i or FIG. 2, it suffices. The heat generated by the ceramic heater not only heats the wafer holding surface, but also dissipates to surfaces other than the crystal 0 holding surface. At this time, the diameter a of the holding surface of a circle is as shown in FIG. 3. When the diameter b of the holding surface is also larger than the diameter b of the surface on the opposite side, the temperature of the holding surface of the wafer = swells as shown in FIG. 1 (a < b) or FIG. 2 (In the case of "a", it is found that the wafer security / distribution distribution is improved, and the uniformity of the wafer holding surface is improved. As a result, the uniformity of the loaded wafer is improved. As a result, the wide wafer carrier has The heat dissipation from the side surface increases, and the temperature of the outer periphery of the wafer tends to decrease. The diameter of the wafer holding surface is relatively smaller than the opposite. The diameter of the side surface can reduce the heat dissipation area, so the wafer can be further uniformized. The temperature distribution on the holding surface can equalize the temperature distribution on the wafer surface. 7 'In the outer periphery of the wafer holding surface, it is located at the position where the self-resistance heating element is most far away' j_ The heat dissipation area increases, so The temperature tends to be lowered. Therefore, by shortening the distance from the outer heating element and reducing the heat dissipation area, the uniformity can be improved. If the temperature distribution on the surface of the wafer is to be set within ± 0.5%, the uniform heat can be generated for 1 life. '+ Then set a $ b. Also, if the diameter b is more straight If the diameter & is larger than 50 ° and P is sighed b-ag 50 μη ′, the temperature distribution on the surface of the wafer can reach a uniformity of less than ± 0.4%, so it is satisfactory. In order to form the difference between the diameter b and the diameter a, except In addition to the method shown in Figure 丨 'not shown in Figure 4', by setting the step in the wafer carrier, the uniformity can be improved.

O: \ 91 \ 91658.DOC 200423209 Furthermore, as shown in Fig. 5, it can also be tilted on the wafer. Ruoji, κ-e e-day sundial carrier's side step is inclined. It is also longer than the diameter a. There is no particular limitation on the shape. As disclosed above, the difference in the shape B of the side surface of the wafer carrier may be appropriately selected according to the required uniformity, required cost, and shape. As a matter of fact, on the day of the wearing of the halberd ’s device, the length of the diameter a of the holding surface of the Japanese yen and the length of the diameter a are widened. On the contrary, the soaking property is lowered and is not satisfactory. The material of the wafer carrier of the present invention is due to deposits ... The use of metal: The problem of particles adhering to the Japanese yen cannot be satisfied.

Beam… "The importance of uniformity of temperature distribution is preferred, and the best conductivity is the nitride or carbon cut * '# V high strength, and high _1_ because silicon nitride has alumina. Bureau-# It is better to pay attention to cost. Even in the Taoman of this net, aluminum nitride (A1N), which has high conductivity, high red resistance, and performance and cost balance, heat transfer to the main, and excellent performance, is more suitable. The shape of the shape is as follows: / 中, Ping expresses the raw material powder of the wafer carrier manufacturing method of the present invention, and the specific surface area is preferably 20 area less than 2.0 m2 / > & m / g #. More than 5.04 days than the table ^ 'Nitrided Ming's sinterability is reduced. Moreover, if the raw material ^ powder has strong cohesiveness and is difficult to use. Once, the amount of oxygen contained in π is better It is less than 2 wt%. If the oxygen content is more than 2 wt%, the heat conductivity of the body is reduced. The amount of metal impurities in the raw material powder is preferably 2000 ppm or less. Metal Miscellaneous

O: \ 91 \ 91658.DOC 200423209 If the mass exceeds this range, the thermal conductivity of the sintered body will decrease. In particular, as a metal impurity such as Si, a group IV element or an iron group element such as Fe has a relatively high effect of reducing the thermal conductivity of the sintered body, and therefore each content is preferably 500 ppm or less.

AiM is a material that is not easily sintered. Therefore, it is preferable to add a sintering aid to the A1N raw material powder. The sintering additive added by households is preferably # 土 类 合 合 $: The rare earth element compound reacts with the indium oxide or indium oxynitride present in Table 2 of the aluminum nitride powder particles during sintering, and also has the promotion Nitriding: Refinement and removal of oxygen, which reduces the thermal conductivity of the hafnium nitride structure, can improve the thermal conductivity of the nitrided sintered body. The rare earth element compound is preferably a compound having a particularly significant effect of removing oxygen. The added amount is preferably 0.01 to 5 wt%. If it is less than 0.001, it is difficult to obtain a fine sintered body 'and the thermal conductivity of the sintered body is reduced. In addition, if it exceeds 5 wt%, there is an axe agent at the daily grain interface of the nitrided sintered body. Therefore, when used in a corrosive environment, a sintering aid at the grain interface exists at a moment. It is the cause of threshing or fine particles. Re :: It is better that the additive amount of sintering aid is ≧ machine% and less than 1% by weight, and there is no axe corrosion resistance at the 3 points of the grain interface. Mi additives, so to improve the use of two types of element compounds can be oxides, nitrides, fluorides, which makes the two "wide. Among them, oxides are easy to obtain because of low prices: people: ..., stearic acid compounds and organic The affinity of the solvent, it is especially suitable for the organic solvent-coated nitride powder and enhanced sinterability.

O: \ 91 \ 91658.DOC 200423209 Special material powder or sintering aid powder, add money to mix. The mixing method may be mixing by a ball mill or -combining. By such mixing, a raw material slurry can be obtained. The obtained material can be obtained by shaping the material. In this method, you can use [] two methods. Two = post metallization method to explain. The above charge is sprayed to form granules. The granules are inserted into a specific metal mold-'continuous pressing. Forming. At this time, the pressure of the press is preferably 98 milk or more. When the pressure is less than 9.8, most of the strong output of the formed body cannot be obtained, and it is easy to break in operation and so on. Strength forming. The density of the body depends on The content of the binder or the addition amount of the sintering aid varies, but it is preferably h5 g / cm3 or more. If it is less than 1.5 g / cm3, the distance between the raw material tertiary particles is relatively increased, and it is difficult to perform sintering. In addition, it is preferable that the progress of the lamination is 2.5 g / cm3 or less. If it exceeds 2.5 gW, it is difficult to sufficiently remove the adhesive in the molded body in the next step of the degreasing treatment. Therefore, it is difficult to obtain fineness as shown above. The sintered body is obtained by heating the above-mentioned formed body in a non-oxidizing environment to perform a degreasing test. You may: ^ When the degreasing treatment is performed in the oxidizing environment of Dixie net, the surface of A1N 1 is oxidized. 'The thermal conductivity of the sintered body is low. As a non-emulsifying% ambient gas, m is nitrogen or argon. The degreasing treatment is preferably 5001 to 1 ΛΛ.…, Up to 100 ° C. At temperatures below 50 ° C, the adhesive cannot be removed with a knife. Therefore, carbon remains in the laminate after degreasing.

O: \ 91 \ 91658.DOC -12- 200423209 left, thus hindering the sintering of subsequent sintering steps. In addition, the amount of carbon of 1 residue in the excess surface t Z degree is excessively reduced, so that the ability to remove the oxygen on the surface of the fine powder and reduce the oxygen on the film is reduced, and the thermal conductivity of the sintered body is reduced. The amount of carbon remaining in the formed body after the degreasing treatment is reduced, as follows. If carbon monoxide remains exceeding hOwt%, sintered body caused by sintering will be hindered. Che Jiao Jia is 1.0% by weight, so it cannot be obtained "times, and sintering is performed. In a non-oxidizing environment such as nitrogen or argon, sintering is performed at a temperature of ⑽ ~ 2 嗔. At this time, the The moisture content is preferably less than the dew point. When it is more than = moisture content = love material, A1N reacts with moisture in the ambient gas to form oxynitride during sintering, so there is a possibility that the thermal conductivity will decrease. Also, the environment The amount of oxygen in gas .t is preferably less than ^. If the amount of oxygen is large, the surface of A1N will oxidize, which may reduce the thermal conductivity. Furthermore, the fixture used during sintering is suitable for nitrided collar (bn) formed body The BN formed body has sufficient heat resistance to the above sintering temperature, and there is solid lubricity on the surface, so the friction between the clamp and the layered body when the laminate shrinks during sintering can be reduced, and distortion can be obtained. Fewer sintered bodies. The obtained sintered bodies are processed as required. When screen printing is carried out-the conductive paste of the step "I expect the surface roughness of the sintered body to be 5 _ or less in Ra units. If it exceeds 5 μm, When the I circuit is formed by screen printing, defects such as pattern bleedout and pinholes are liable to occur. The surface roughness is more suitable if the unit of Ra is 1 pm or less. Μ Grinding the surface roughness on both sides of the sintered body Screen printing

O: \ 91 \ 91658.DOC -13- 200423209 Brush = situation is a matter of course, but even if the screen printing is performed on one side only: The grinding screen is also implemented on the screen printing side and the opposite side. ": In the case where only the screen-printed surface is ground, the sintered body is supported by the surface without screen grinding on the screen printing day guard. At this time, there are protrusions or foreign matter on the surface that is not advanced: Therefore, the fixation of the sintered body does not change, because the circuit pattern cannot be perfectly described by screen printing. ―At this time, the parallelism of the two processed surfaces is preferably less than or equal to 0.55. If the flatness exceeds 0.5 When the thickness is mm, the unevenness of the thickness of the conductive paste during screen printing is increased. It is particularly suitable if the parallelism is less than the Q1 surface. Furthermore, the flatness of the surface of the P brush is preferably 0. 5 _ below. In the case of flatness exceeding 0.5 _, the unevenness of the thickness of the conductive paste will also appear to be large. The right flatness is also particularly suitable for 0 1 mm or less. Conductive paste is applied to the sintered body by screen printing to form a gas circuit. The conductive paste can be obtained by mixing metal powder, according to: oxide powder, binder and solvent. The metal powder is preferably tungsten, molybdenum or button because of the matching of the thermal expansion coefficient of ceramics. It is also possible to add oxide powder with the tightness of the reading. Oxygen: Plutonium is preferably the oxide or AM of the element 细 of the fine group A element, and its oxidizing age is very wettable to Α1Ν. Good and convincing. When the amount of oxide is added, it will make the opening "wide" ° wt%. Less than ° .lwt% # / Cheng of the electric rolling circuit, that is, the metal layer and A1N are tight and strong-when the right exceeds 30 hours, the electrical circuit, the metal resistance value increases. "The thickness of the paste is the thickness after drying, preferably 5 _ or more, _

O: \ 91 \ 91658.DOC -14- 200423209 μιη. When the thickness is less than 5 μηΐ2, the electrical resistance value is excessively increased, and the compact strength is also reduced. In addition, when it exceeds 〖〇〇μπι, the compaction strength also decreases. In the case where the circuit pattern to be formed is a heater circuit (heating body circuit), the interval between the patterns is preferably set to 0 or more colors. Less than 〇 ι _ between ^ ’When a current flows into the heating element, a shallow leakage current will occur due to the application of electricity and temperature, and a short circuit will occur. In particular, when used at a temperature of 50 ° C or more, the pattern interval is preferably set to 1 mm or more, and more preferably 3 mm or more. 0 Second, the conductive paste is degreased and then fired. The fat is degreased in nitrogen or Argon and other non-oxidizing conditions are carried out. Degreasing temperature is preferably above 匚. When it is less than 500…, the removal of the adhesive in the conductive paste is insufficient, so the residual stone in the inner side will be reversed. Carbides of metal are formed during firing, so the electrical resistance value of the metal layer is increased. Non-oxidizing environmental towels fired in gas or argon, a temperature of 150 m, a temperature of 13 to 1500 c In the process, the conductive paste is not grown: it is a grain growth of the powder, so the electrical resistance of the metal layer after firing! Over: high. Also, the firing temperature is preferably not exceeding the sintering temperature of ceramics. When the conductive paste is fired at the temperature of the overflow degree, the sintering aid 陶 of Tao Jingzhong 2 volatilizes, and the metal in the mosquito paste paste increases: the grain grows, and the tightness of the ceramic change and the metal layer decreases. Liter; Formation: =: Guarantees the insulation of the formed metal layer, and can be formed on the metal layer Bar coating edge of the screen should be small, and the fine material and anti layers of coating electrical circuits /, ..., if the difference in the coefficient of expansion as 5.3 〇χ1〇-6 / Κ is less and

O: \ 91 \ 91658.DOC -15-200423209 No particular limitation. For example, crystallized glass or A1N can be used. These materials are made into a paste form, for example, and screen-printed to a specific thickness. After degreasing according to the conditions, they can be formed by firing at a specific temperature. At this time, the amount of the sintering assistant added is preferably 001 wt% or more. When the content is less than 〇iwt%, the insulating coating layer cannot be refined and it is difficult to ensure the insulation of the metal layer. The sintering assist amount is preferably not more than 20 wt%. If it exceeds 20%, the sintering aid over 7 is saturated in the metal layer, so the electrical resistance value of the metal layer is reduced: There is no particular limitation on the thickness of the coating, but it is preferably 5 μm or more. This is because it is difficult to ensure insulation properties when the thickness is less than 5 μm. =, As conductive paste, you can also use a mixture of silver, platinum, platinum, etc. 1. gold. The content of these metals relative to silver is added by the volume resistivity of palladium or platinum, so if the addition is adjusted according to the circuit pattern = P can be added. Additions such as Hai have the effect of preventing migration between circuit patterns'. For moo parts by weight, it is preferable to add pure 丨 parts by weight or more. In all powders, to ensure tightness with A1N, it is preferable to add boron subtractives. For example, you can add oxygen or oxygen cutting, copper oxide, oxidation ==, oxidation oxidation, rare earth oxides, transition metal element oxidation :, and oxidative earth metal oxidation above 50 wt%. Jordan. As for the addition amount, it is preferably 0.1 tour. The lowering cannot make people feel the tightness between 'at that time' and the nitride nitride, and the 'right' content is more than that, which hinders the sintering of the metallic component of silver, which is unsatisfactory. The powder of '', organic matter is mixed with these metal powders, and then six: or adhesives are made into a paste and can be formed by the same circuit as above. In this case, for the formed circuit pattern, in

O: \ 91 \ 91658.DOC -16-200423209 In an inert gas environment such as nitrogen or in the air, it is fired at a temperature range of 7000c to 10,000. In order to ensure the insulation between circuits, it can be shaped by firing or hardening by coating crystallized glass or glazed glass, organic resin, etc. :: edge layer. As for the type of glass, acid glass, oxidized glass, zinc oxide, oxidized oxide, and oxidized stone can be used. An organic solvent or a binder is added to these powders to form a paste, and the coating is performed by screen printing. There is no particular limitation on the thickness of the coating, but it is preferably 5 μπ1 or more. When it is less than 5 mm, it is difficult to ensure insulation. As for the firing temperature, we expect the temperature to be lower than that of the above-mentioned road = %%. The method of increasing the resistance value of the circuit pattern at the time of firing with the above-mentioned circuit firing phase / during firing is satisfactory. …, Secondly, a ceramic substrate may be further laminated as necessary. The lamination may be performed via a bonding agent. The bonding agent adds a halogen compound or a ma group element compound and a binder or a solvent to the hafnium oxide or nitrogen M powder, and applies paste to the bonding surface by screen printing or the like. There is no particular limitation on the thickness of the applied bonding blade, but it is preferably 5 μm or more. When the thickness is less than 5 mm, pinholes or bonding defects are generated on the bonding layer. In the center, the ceramic substrate coated with the bonding agent is degreased in a non-oxidizing environment at a temperature of 50 (rc :). After that, the laminated ceramic: the substrates are overlapped with each other, = specific negative 胄Due to heating in a non-oxidizing environment, the ceramic-free soil plates are bonded to each other. The load is preferably 5 kpa or more. When the load is less than 5 kPa, 'the sufficient bonding strength cannot be obtained or the above-mentioned bonding defects are liable to occur.'

O: \ 91 \ 91658.DOC -17- 200423209 The heating temperature for bonding is not particularly limited if the ceramic substrate is sufficiently tightly bonded to each other through the bonding layer, but preferably 15 or more. When it is less than 150 generations, it is difficult to obtain sufficient bonding strength and it is easy to produce a trapping cage. The above degreasing and non-oxidizing environment during bonding are preferably used: or hydrogen. As described above, a ceramic laminated sintered body to be a wafer carrier can be obtained. In addition, the electrical circuit does not use conductive paste. For example, if it is a heater circuit, in the case of a pin (coil), an electrode for electrostatic adsorption, or a lamp electrode, a grid of platinum or tungsten (mesh) ). "Qing ^ T contains the above-mentioned turning coils or grids in the material powder, which can be prepared by hot pressing. The temperature or environment of M _ as long as the m1 and environment of the above A1N, but the hot pressing pressure is preferably Applying 0.98MPa or more. When the pressure is less than 0.98 MPa, there is a gap between the turning coil or grid and A1N, so the performance of the heater cannot be displayed. Second, about 7 7τ —, the state of the civil law is clear. The raw material pulp hunting is carried out by the scraper method for thin gland 忐 —, 乂. There is no particular limitation on the formation of the 浔 film, but the thickness of the 溥 film after drying is better than 31, and the dryness of the slurry is 27. If the thickness of the film is increased, the probability of cracking is increased. As the retraction is increased, a thin film is produced by applying a conductive paste by screen printing or the like to form a specific shape on the film. The outer layer of the rolled circuit. The conductive paste can be the same as described in the post-metallization method. However, according to the method, the conductive paste does not hinder even if no oxide powder is added. Thin film for circuit formation and non-circuit formation

O: \ 91 \ 91658.DOC -18-200423209 film. The lamination method places the films at specific positions and overlaps each other. In this case, a solvent is applied in advance between the respective films as necessary. In the state of mutual weight @, heat as needed. When heating, the heating temperature is preferably as follows. When heated above this temperature, the 'laminated' film can be severely deformed. In addition, pressure is applied to the films that overlap each other to be integrated. The applied pressure is preferably within the range of 丨 ~ 丨 ㈧. When the pressure of iMpa is not full, the film cannot be fully integrated, and it will cause peeling in the subsequent steps. X, if a pressure exceeding 100MPa is applied, The amount of deformation increases excessively. This laminate is subjected to degreasing treatment and sintering in the same way as the above-mentioned thermal post-metallization method. The temperature and carbon content of the degreasing treatment or sintering are the same as those in the thermal-post metallization method. When the glue is printed on the film, it is printed on a plurality of films. Brush the heater circuit or the electrode for electrostatic adsorption, etc., by ordering them: layer / can also be easily made into the electric heating with a plurality of electrical circuits, Therefore, it is possible to obtain a ceramic laminated sintered body that becomes a heater. In addition, when an electrical circuit such as a heating element circuit is formed on the outermost layer of a ceramic laminate, in order to ensure the protection and insulation of the electrical circuit, the insulation can be formed on the electrical circuit in the same way as in the metallization method after 2. In the coating state: In most cases, the ceramic laminated sintered body is processed as required: In most cases, it cannot reach the degree required by a semiconductor manufacturing apparatus. Processing accuracy, such as level of loading surface of the object to be processed, etc., is good. . 二 == 5Γ, the gap between the object to be treated and the "heater" is easy to produce =:

O: \ 91 \ 91658.DOC -19- 200423209 The heat of the device cannot be uniformly transmitted to the object to be treated, and it is easy to cause uneven temperature of the object to be treated. The surface roughness of the wafer holding surface is preferably 5 or less in Ra units. When the Ra unit exceeds 5 μηι, the fetching of eight fetches increases due to the friction between the wafer carrier and the wafer. At this time, the particles that have been threshed become fine particles, which adversely affects processing such as film formation or etching on the wafer. The rough surface is suitable if the Ra unit is 1 μm or less. In the same manner, the wafer carrier body can be manufactured. Furthermore, a mechanical shaft is mounted on the wafer carrier. If the material of the mechanical shaft is different from the thermal expansion coefficient of the ceramic of the wafer carrier, the maximum thermal expansion coefficient is not limited, but the difference from the thermal expansion coefficient of the wafer carrier is preferably 5 > < 1〇_6 / Foot below. If the difference between the thermal expansion coefficients exceeds 5 × 10 · 6 / κ, torture occurs near the wafer carrier and the machine, and the joints of the shaft during the installation. Even if the joints are cracked during the joint, the joints are repeatedly ± Thermal cycling can cause or crack. For example, when the 'wafer carrier is A1N, the material of the mechanical shaft is most suitable for Am, but it can be bonded by nitrogen cutting, carbon cutting or enriched with pillars and A1Γ ^ Γ bonding layer. The composition of the bonding layer preferably includes A1N, Al2_, and a rare-area oxide. The composition of the material or the fineness of the material of the mechanical shaft is good. Because the connection is high, it is easy to obtain the airtightness of the joint surface, so it is full of mouth. The mechanical axis and wafer carrier to be joined are preferably 0.5 mm or less. If it exceeds this time, the flatness of the joint / surface is easier to produce a gap at the right side, although the “sexual joint. The flatness is more suitable &

O: \ 91 \ 91658.DOC -20- 200423209 T is more suitable. In addition, when the surface roughness of each of the joint surfaces is 5 μm or less in Ra units, and the surface roughness is exceeded, a gap is easily generated at the joint surface. The surface roughness is more suitable if the unit of Ra is i or less. ::, The electrode is installed on the round carrier. The installation can be performed in a well-known way. For example, from the wafer holding surface and the opposite side of the wafer carrier to the electrical circuit to perform the winding process, the electrical circuit is metallized or the direct active metal rod is used for de-alloying. An electrode such as indium or crane is sufficient. Thereafter, if necessary, an electric bond is applied to the electrode to improve the oxidation resistance. In this way, a wafer carrier for a semiconductor manufacturing apparatus can be manufactured. In addition, the wafer carrier of the present invention is mounted in a semiconductor device, and semiconductor wafers can be processed. The temperature of the wafer holding surface in the wafer carrier of the present invention is uniform, so that the temperature distribution of the wafer is also uniform compared to the previous one. Therefore, stable characteristics can be obtained for the formed film or heat treatment. (Example 1) 99 parts by weight of osmium nitride powder and 丨 parts by weight of other powders were mixed, and polyethylene butylene was used as a binder, 10 parts by weight, and dibutyl phthalate was used as ~ | ! 5 mils, mix, and use a doctor blade method to form a green film with a thickness of 1.0 mm. In addition, as the nitride powder, an average particle diameter U and a specific surface area of 3.4 mVg were used. Also, an average particle diameter of 20 is called | powder is p parts by weight, Y203M parts by weight, and 5 parts by weight of ethyl cellulose, which is a binder, and butylcarbitol is used as a solvent to make w paste. . A pot mill and three rollers are used for mixing. This W paste was printed on a screen to form a heater circuit pattern on the green film. On the green film of the printed heater circuit, a plurality of layers are each laminated.

O: \ 91 \ 91658.DOC -21-200423209 thick green film, made of laminated body. Laminate the film in the model and set it. Laminated by heating at 5 ° C in a press and thermocompression bonding at 10 MPa for 2 minutes. Thereafter, degreasing was performed at 600 ° C in a nitrogen environment and in a nitrogen environment. The wafer was sintered at 1800 ° C for 3 hours to produce a wafer carrier. After sintering, grinding was performed so that the wafer holding surface had a Ra unit of 1 μη or less and the mechanical shaft joint surface was Ra. The unit is 5 μm or less. In addition, the outer diameter is also processed. The dimensions of the wafer carrier after processing are shown in Table 1. Furthermore, the thickness is 20 mm. From the side opposite to the wafer holding surface to the above heating The heater circuit is wound to expose a part of the heater circuit. The exposed heater circuit part is used to directly connect an electrode made of Mo to an active metal solder. In this electrode, a wafer carrier is heated by applying electricity and the uniformity is measured. The measurement of heat and temperature is carried out by mounting a wafer thermometer with a diameter of 300 mm on the wafer holding surface and measuring its temperature distribution. Furthermore, the power supply is adjusted so that the temperature at the center of the wafer thermometer becomes 550 ° C. . Results shown in Table 1. O: \ 91 \ 91658.DOC -22- TABLE 1

No Diameter (mm) Diameter b (mm) ba (μπι) Soaking (%) 1 340.20 340.00 — 200 ± 0.60 2 340.15 340.00 -150 ± 0.59 3 340.12 340.00 — 120 ± 0.58 4 340.10 340.00 -100 ± 0.57 5 340.07 340.00 -70 ± 0.55 6 340.06 340.00 -60 ± 0.54 7 340.04 340.00 -40 ± 0.53 8 340.02 340.00 -20 ± 0.51 9 340.00 340.00 0 ± 0.50 10 339.98 340.00 20 ± 0.46 11 339.97 340.00 30 ± 0.43 12 339.95 340.00 50 ± 0.40 13 339.93 340.00 70 ± 0.38 14 339.90 340.00 100 soil 0.37 15 339.85 340.00 150 ± 0.35 16 339.80 340.00 200 ± 0.33 17 339.50 340.00 0.5, plus 0.32 18 339.00 340.00 1.0 ± 0.30 19 338.00 340.00 2.0 ± 0.28 20 337.00 340.00 3.0 ± 0.26 21 336.00 340.00 4.0 soil 0.24 22 335.00 340.00 5.0 ± 0.23 23 330.00 340.00 10.0 soil 0.20 24 325.00 340.00 15.0 soil 0.17 25 320.00 340.00 20.0 soil 0.15 26 310.00 340.00 30.0 ± 0.13 27 305.00 340.00 35.0 ± 0.28 28 300.00 340.00 40.0 ± 1.40 200423209 as Table 1 judges that by setting the diameter b to be larger than the diameter a, the temperature distribution on the wafer surface can be determined. Within disabilities as 0.5%. In addition, if the diameter b is larger than 50 μm compared to the diameter a ', the temperature distribution on the surface of the wafer can be set to within 0. 4%. (Example 2) Each wafer carrier of Table 1 was loaded into a semiconductor manufacturing apparatus, and a TiN film was formed on a Si wafer having a diameter of 12 inches. When using a wafer carrier of No. 1 ~ 8 O: \ 91 \ 91658.DOC -23- 200423209, the non-uniformity of the film thickness of TiN is greater than 15%, and when using other wafer carriers, The non-uniformity of film thickness is less than 10%, which can form a good TiN film. (Example 3) A wafer carrier having a thickness of 20 mm was fabricated in the same manner as in Example 1. Next, as shown in Fig. 4, a step was formed on the wafer carrier, and the soaking property was measured in the same manner as in Example 1. The results are shown in Table 2. Table 2

No Diameter a (mm) Diameter b (mm) b, a (mm) Soaking (%) 29 338.00 340.00 2.0 ± 0.27 30 335.00 340.00 5.0 ± 0.22 31 330.00 340.00 10.0 ± 0.20 32 325.00 340.00 15.0 ± 0.16 33 320.00 340.00 20.0 00 · 15 34 310.00 340.00 30.0 ± 0.13 35 305.00 340.00 35.0 ± 0.33 36 300.00 340.00 40.0 11 · 40 As judged from Table 2, even when a step is formed, by setting the diameter b to be larger than the diameter a, the The temperature distribution on the wafer surface is set within ± 0.5%. Furthermore, if the diameter b is larger than 50 μm compared to the diameter a, the temperature distribution on the surface of the wafer can be set to within 0.4%. (Industrial Applicability) According to the present invention, by setting the diameter a of the wafer holding surface to be smaller than the diameter b of the surface opposite to the wafer holding surface, it is possible to provide a wafer carrier and a semiconductor manufacturing apparatus having excellent heat uniformity. . By setting b-a-50 μηι, the soaking performance can be further improved. The semiconductor manufacturing device with such a wafer carrier is similar to the previous device of O: \ 91 \ 91658.DOC -24- 200423209, and the temperature distribution of the heater is more uniform, so the characteristics of the 2 conductors or the use of raw materials can be realized. Rate, reliability or integration, and image quality. [Brief description of the drawing] The drawing is a drawing showing the cross-sectional structure (4) of the wafer carrier of the present invention. FIG. 2 is a diagram showing a cross-sectional structure (a = b) of the wafer carrier of the present invention. FIG. 3 is a view showing a cross-sectional structure (a> b) of a wafer carrier other than the present invention. It is a figure which shows the other example of the cross-sectional structure (a < b) of the wafer carrier of this invention. Fig. 5 is a view showing another example of the cross-sectional structure (a < b) of the wafer carrier of the present invention. [Illustration of Symbols] 1 • Wafer carrier 2 Wafer a Wafer diameter of wafer holding surface b Diameter of the surface opposite to wafer holding surface

O: \ 91 \ 91658.DOC -25-

Claims (1)

200423209 Scope of patent application: 1. A wafer carrier for semiconductor manufacturing equipment, which has a wafer holding surface, which is characterized in that the diameter a of the wafer holding surface of the wafer carrier is smaller than that of the wafer carrier. The diameter b of the surface on the opposite side of the wafer holding surface. 2. If the wafer carrier for a semiconductor manufacturing device according to item 丨 of the patent application, wherein the diameter b is larger than the diameter a by 50 μm or more. 3. The wafer carrier for a semiconductor manufacturing device as set forth in claim 1 or 2, wherein the wafer carrier is a ceramic heater that forms a resistance heating element inside or on its surface. 4. A semiconductor manufacturing device, characterized in that it is equipped with a wafer carrier according to any one of patent application scopes 1 to 3. O: \ 91 \ 91658.DOC