TW200422817A - Power-on reset circuit with supply voltage and temperature immunity, ultra-low DC leakage current, and fast power crash reaction - Google Patents

Power-on reset circuit with supply voltage and temperature immunity, ultra-low DC leakage current, and fast power crash reaction Download PDF

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Publication number
TW200422817A
TW200422817A TW92109841A TW92109841A TW200422817A TW 200422817 A TW200422817 A TW 200422817A TW 92109841 A TW92109841 A TW 92109841A TW 92109841 A TW92109841 A TW 92109841A TW 200422817 A TW200422817 A TW 200422817A
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Taiwan
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voltage
power
reset
node
supply signal
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TW92109841A
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Chinese (zh)
Inventor
Chien-Chung Tseng
Chih-Neng Hus
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Macronix Int Co Ltd
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Priority to TW92109841A priority Critical patent/TW200422817A/en
Publication of TW200422817A publication Critical patent/TW200422817A/en

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Abstract

A power-on reset circuit includes a Schmitt trigger circuit, a voltage divider, and a compensate circuit. The Schmitt trigger circuit includes a plurality of MOS devices of a uniform threshold voltage (Vt) for determining a power reset trigger level. The voltage divider is coupled to an input of the Schmitt trigger circuit for tracking the supply signal. The compensate circuit is operative to generate a small reset pulse to compensate for temperature and the supply signal variation effect.

Description

200422817 五、發明說明(1) 發明所屬之技術領域 本發明係有關一電源供應電路,特別是關於一種電 源供應電路的電源開啟重置電路。 先前技術 傳統地,電子裝置需要一電源供應器提供一相當穩 定的電壓給該電子裝置,在這樣的裝置中,當電源最初 供應到該電子裝置時,供應信號非立即地由一接地電位 上升至一操作的準位。當該供應信號超過一臨界值時1, 一”電源開啟重置n (power-on reset)信號輸入至各種由 供應信號得到足夠的電壓的元件,接著該鼋子裝置的各 種元件可能因應該電源開啟重置信號而初始化到一預設 的狀態。在許多的電子裝置中,每當該電源開啟重置信 號被產生時,該電子裝置將進入相同的預設狀態。 許多電子裝置也具有一低電源(low power)模式,也 稱為休眠(s 1 e e p )模式或休眠狀態。當在低電源模式時, 該供應信號被減弱至非常低的準位,這個準位足以提供 某些裝置運作,但不足以提供其他裝置運作,例如,一 電腦系統可能包含一低電源記憶體,其可儲存連線資 訊、最新修正檔以及其他用來修復電腦系統的資料。 當該供應信號在休眠狀態後被回復至其運作的準位 時,通常不希望產生該電源開啟重置信號,因為該電源 開啟重置信號係將該電子裝置恢復至預設的狀態而不是 恢復該連線,例如,該電源開啟重置信號可能抹除在連200422817 V. Description of the invention (1) Field of the invention The present invention relates to a power supply circuit, and more particularly to a power-on reset circuit of a power supply circuit. The prior art has traditionally required an electronic device to provide a fairly stable voltage to the electronic device. In such devices, when the power is initially supplied to the electronic device, the supply signal is not immediately raised from a ground potential to A level of operation. When the supply signal exceeds a threshold value 1, a "power-on reset" signal is input to various components that obtain sufficient voltage from the supply signal, and then various components of the device may respond to the power supply. The reset signal is turned on to initialize to a preset state. In many electronic devices, each time the power-on reset signal is generated, the electronic device will enter the same preset state. Many electronic devices also have a low Low power mode, also known as s 1 eep mode or hibernation mode. When in low power mode, the supply signal is reduced to a very low level, which is sufficient to provide the operation of some devices. But it is not enough to provide other devices to operate, for example, a computer system may include a low-power memory, which can store connection information, the latest revision files and other data used to repair the computer system. When the supply signal is hibernated When returning to its operating level, the power-on reset signal is usually not desired because the power-on reset signal Recovery is set to a predetermined state instead of resuming the connection, e.g., the power-on reset signal may even erase the

第6頁 200422817 五、發明說明(2) 線期間所使用的部分記憶,為了避免這種不良的結果, 許多電子裝置被設計當該供應信號的電壓從非常低的’’休 眠π電壓增加到一完全地操作電壓時,該電源開啟重置信 號被抑制,相反的,當該該供應信號的電壓從接地電位 增加到一完全地操作電壓時,該電源開啟重置信號被提 供,在從一休眠狀態恢復的期間,抑制該電源開啟重置 信號有助於防止記憶體以及其他電源開啟的程序的再次 初始化,以防使休眠狀態的優點消失。 許多的技術已被用來在從休眠狀態恢復的期間抑> 制 該電源開啟重置信號。美國專利號6, 0 84, 44 6使用雨k具 有不同臨界電壓的電晶體,當該電腦系統在休眠模式 時,其中一組具有極低臨界電壓的電晶體被用來操作; 這些電晶體的閘極接點即使當該供應信號的電壓非常小 時,亦能觸發,該低臨界電壓電晶體在一節點上提供一 非零電壓,若該低臨界電壓電晶體不運作,該節點將被 接地。另一組電晶體具有一正常的臨界電壓,其源極端 連接該節點,當從休眠模式恢復時,該組電晶體無法被 觸發,但當從一全電源下降狀態恢復時,可以被觸發。 製作具有不同臨界電壓裝置的積體電路是高成本且 困難的製程,可能需要多個光罩製程的步驟,因此,在 習知技術中需要存在一種電源開啟重置電路,其所有的 電晶體具有大體上相同的臨界電壓,使得該電源開啟重 置電路可以提供一電源開啟重置信號以因應一具有足夠 電壓的供應信號,除非從一休眠狀態恢復時。更存在一Page 6 200422817 V. Description of the invention (2) Part of the memory used during the line. In order to avoid such bad results, many electronic devices are designed when the voltage of the supply signal is increased from a very low `` sleep π voltage '' to one. When the voltage is fully operated, the power-on reset signal is suppressed. Conversely, when the voltage of the supply signal is increased from the ground potential to a fully operational voltage, the power-on reset signal is provided. During the state recovery, suppressing the power-on reset signal helps prevent the memory and other power-on programs from being initialized again, so as to prevent the advantages of the hibernation state from disappearing. Many techniques have been used to suppress the power-on reset signal during recovery from the hibernation state. US Patent No. 6, 0 84, 44 6 uses transistors with different threshold voltages. When the computer system is in sleep mode, a group of transistors with extremely low threshold voltages are used to operate; The gate contact can be triggered even when the voltage of the supply signal is very small. The low critical voltage transistor provides a non-zero voltage at a node. If the low critical voltage transistor does not work, the node will be grounded. The other group of transistors has a normal threshold voltage, and its source terminal is connected to the node. When recovering from the sleep mode, the group of transistors cannot be triggered, but can be triggered when recovering from a full power down state. Making integrated circuits with different threshold voltage devices is a costly and difficult process, which may require multiple photomask process steps. Therefore, in the conventional technology, a power-on reset circuit is required. All the transistors have The threshold voltage is substantially the same, so that the power-on reset circuit can provide a power-on reset signal in response to a supply signal with sufficient voltage, except when recovering from a sleep state. There is more

第7頁 200422817 五、發明說明(3) 種電路的需求,其產生一具有溫度免疫、超低直流漏電 流及快速電源潰降反應的電源開啟重置信號。 發明内容 本發明包括一電源開啟重置電路,當一供應信號從 一零或接近零的電壓(關聯一完整的電源下降狀態)開始 增加時’其可以提供一電源開啟重置信號因應該供應信 號的增加,而當該供應信號從非零電壓(關聯一休眠狀 態)開始增加時,可以抑制該電源開啟重置信號,換亨 之’關聯一完整的電源下降(p 0 w e r d 〇 w η )狀態,該電源 開啟重置信號被提供因應一由零供應電壓瑨加至一操作 電壓的供應信號,但是關聯一休眠狀態並不提供該電源 開啟重置信號因應該從一非零電壓增加到一操作電壓的 供應信號。 、 再者,本發明包括一種電源開啟重置電路,當一供 應信號從該操作電壓減少至一零或接近零的電壓時(關聯 ,,下降狀態),其可以提供一減少振幅的電源開啟重 置k號因應該供應信號的減少,而當該供應信號由一零 或接近零的電壓(關聯電源下降狀態)開始增加至操作電 ^時’可以提供較大振幅的電源開啟重置信號以因應該 供應信號的增加。 方面本發明可以藉由例如提供一電源開啟重置電 路滿足上述需求,在該電源開啟重置電路中的所有電晶 體具有大體上相同的臨界電壓,另一方面,該電源開啟Page 7 200422817 V. Description of the invention (3) The need for a circuit that generates a power-on reset signal with temperature immunity, ultra-low DC leakage current, and a fast power-down response. SUMMARY OF THE INVENTION The present invention includes a power-on reset circuit. When a supply signal increases from a voltage of zero or near zero (associated with a complete power-down state), it can provide a power-on reset signal in response to a supply signal. Increase, and when the supply signal starts to increase from a non-zero voltage (associated with a sleep state), the power-on reset signal can be suppressed, changing to the 'associated with a complete power drop (p 0 werd 〇w η) state The power-on reset signal is provided in response to a supply signal that is increased from zero supply voltage to an operating voltage, but the power-on reset signal is not provided in association with a sleep state and should be increased from a non-zero voltage to an operation Supply voltage signal. Further, the present invention includes a power-on reset circuit, which can provide a power-on reset power supply with reduced amplitude when a supply signal is reduced from the operating voltage to a voltage of zero or close to zero (associated, falling state). The number k should correspond to the decrease in the supply signal, and when the supply signal starts to increase from a zero or near zero voltage (associated power supply down state) to the operating power ^ 'can provide a larger amplitude power on reset signal to The increase in signal should be supplied. On the one hand, the present invention can meet the above requirements by, for example, providing a power-on reset circuit. All the electric crystals in the power-on reset circuit have substantially the same threshold voltage. On the other hand, the power on

第8頁 200422817Page 8 200422817

五、發明說明(4) 重置電路包括一電壓分壓器 面,該電源、開啟重置電路包 應信號時可以提供一極低的 一目的,一種史密特觸發電 回復時,可以藉由例如提供 一低電源狀態回復時,提供 一致臨界電壓的需求。當從 電壓下降狀態時,該史密特 程序。根據本發明的另一目 溫度變化提供熱補償。 在此所陳述的任何特點 所提供的範圍中,只要這些 下文、說明書以及在該領域 沒有明顯的互相衝突。為了 述本發明的明確觀點、優點 到,並非所有觀點、優點或 的特定實施例中,在接下來 中,本發明額外的優點及觀 以追縱一供應信號,又一方 括一電壓分壓器在追蹤該供 直流漏電流。根據本發明的 路,當由一完整的電源下降 一觸發電壓臨界值,而當由 另一觸發電壓,以消除對非 一操作電源轉換至一完整的 觸發電路可以再提供一觸發 的’ 一種補償電路可以因、應 或其組合均被包含在本發明 特點所包含的任意組合與上 =具有普通技藝人士的知識 概括本發明的目的,在此陳 及新特點,當然,可以了解 特,都必定被包含在本發明 =詳細說明及申請專利範圍 •·、έ將會彳艮明顯。 實施方式 本發明所提出伴隨圖式翰 地被參照。儘可能地,相同或月的較佳實施例將更詳細 及說明以參照相同或相似的部^似的圖號被使用於圖式 丨_ 式,並沒有精確的尺寸。關該圖式係一精簡的圖 關於揭露在此使用於有關伴隨 ·V. Description of the invention (4) The reset circuit includes a voltage divider surface. The power supply and the reset circuit package can provide a very low purpose when the signal is received. When Schmitt triggers the electrical recovery, it can be achieved by For example, when providing a low power state recovery, the need to provide a consistent threshold voltage. The Schmitt procedure is applied when the voltage drops from the state. Temperature variation according to another aspect of the present invention provides thermal compensation. To the extent that any feature stated herein is provided, as long as there is no apparent conflict between these texts, the description, and the field. In order to describe the clear viewpoints and advantages of the present invention, not all viewpoints, advantages, or specific embodiments. In the following, additional advantages and viewpoints of the present invention follow a supply signal, and a voltage divider is included in another aspect. Tracking this supply DC leakage current. According to the circuit of the present invention, when a trigger voltage threshold value is dropped from a complete power supply, and when another trigger voltage is used to eliminate the transition from a non-operational power supply to a complete trigger circuit, a trigger can be provided. Circuits can be included, responded or combined in any combination of the features of the present invention = with the knowledge of ordinary artisans to summarize the purpose of the present invention, here are the new features, of course, you can understand the features, must be included The scope of the present invention = detailed description and patent application will be obvious. Embodiments The accompanying drawings proposed in the present invention are referred to. As far as possible, preferred embodiments of the same or month will be described in more detail and explained with reference to the same or similar drawings, and are used in the drawings without precise dimensions. The diagram is a simplified diagram. The disclosure is used here for related companions.

200422817 五、發明說明(5) 圖不的方向 在上方、高 了方便及清 被解釋來限 雖然在 例的方式而 雖然敘述了 藉由申請專 發明所有的 在此所陳述 的完整製程 種傳統的積 使用的製程 明一般被應 了說明這個 號及溫度免 電源開啟重 除非特 ’·等名稱均;^ 該被看作一 與”臨界值” 樣的,’’臨^ 表示一電壓 壓;通常”- 名稱,例如上、下、左、右、向上、向下、 於、在下方、後面以及前面,其目的僅是為 楚說明,在任何情況下此類的方向名稱不能 制本發明的範疇。 此的揭露係參照某些說明的實施例,藉由範 非限制的方式被提出,以使其内容被了解。 示範的實施例,但是下面詳細說明的目的係 利範圍來定義本發明的精神及範疇以涵蓋本 修改、變化及其等效。可以了解及領會到, 的過程步驟及結構沒有包含電源供應器製1作 流程,本發明可能被運用在該稜術領域中各 體電路製造技術上,而僅有絕大部分一般所 步驟被包含於此,以助於了解本發明,本發 用在半導體元件及製程的領域中,然而,為 目的,下列陳述的例子係有關一具有供應信 疫與超低直流漏電流及快速電源潰降反應的 置電路。 別指明,π電壓"、π信號”、”準位”及”臨界值 良示電壓,例如,”供應信號VDD”這個名稱應 被提供至該電源開啟重置電路的電壓,電壓 之間的比較應被看作是電壓之間同 ^壓降”這個名稱在這整篇陳述中一 $ 差,該電壓差近似等於任一雷曰 ^ ^ ^ ^ -6»界壓降應該為一近似0.6伏特的壓差,但 200422817 五、發明說明(6) 疋應该了解到假如使用不同的電晶體將具有不同的值, 在這個說明實施例的電源開啟重置電路中的任一電晶體 的臨界電壓大體上與在該電源開啟重置電路中其他所有 電晶體的Sft界電壓相同。 雖然其他實施例可能使用具有不同Vt的1^1〇3,但在這 個說明實施例中僅使用單一Vt的仙3以及史密特觸發電 路決定電源重置觸發準位,該電源開啟/關閉電·壓係根據 一重置信號決定,當該供應信號VDD不穩定時,一低端 (low-end)電阻R2連接節點LB以追蹤VDD ,這不同於某些 已知的系統,在這些已知的系統中為了電源開啟重置,係 使用具有不同Vt的M0S元件,在這樣的習知.系統中,由於 使用迴授PM0S來降低直流漏電流,故該電源重置觸發準 位可能被降到1 · 2伏特。 參照較具體的圖式,圖1係根據本發明實施例的電源 開啟重置電路的簡單示意圖,圖中所示的該電源開啟重 置電路包括一電壓分壓器1〇、一補償電路2〇、一史密特 觸發電路30、一供應耦合電容4〇、一第一反相器XI、一 接地耦合電容60以及一第二反相器χ2。圖2係根據本發明 實施例的電源開啟重置電路的詳細圖式,該電源開啟重 置電路包括該電壓分壓器1〇、該補償電路2〇、該史密特 觸發電路3 0、該供應耦合電容4〇、該第一反相器XI、該 接地耦合電容60、該第二反相器X2以及一第三反相器 X3 〇 繼續參照圖1及圖2,該電壓分壓器1 〇的目的在於,200422817 V. Description of the invention (5) The direction of the drawing is above, convenient and clear. The explanation is limited to the way of the example, although it describes the traditional process of the complete process stated here by applying for the invention. The manufacturing process used by the product is generally used to indicate that this number and temperature are free from power on unless the name is special; ^ should be regarded as a "critical value", "Lin ^" means a voltage; usually "-Names, such as up, down, left, right, up, down, at, below, behind, and front, are for the purpose of illustration only, and in any case such direction names do not make the scope of the invention This disclosure refers to certain illustrated embodiments, and is proposed in a non-limiting manner so that its content can be understood. Exemplary embodiments, but the purpose of the detailed description below is to define the spirit of the invention And scope to cover this modification, change, and equivalent. It can be understood and appreciated that the process steps and structure do not include the power supply system manufacturing process, the present invention may be applied In the field of prismatic technology, only the most general steps are included here to help understand the present invention. The present invention is used in the field of semiconductor components and processes. However, for the purpose The following statement is an example of a circuit with a supply of epidemic and ultra-low DC leakage current and fast power supply collapse response. Do not specify, π voltage ", π signal "," level "and" threshold value good indication " Voltage, for example, the name "supply signal VDD" should be provided to the voltage of the power-on reset circuit, and the comparison between voltages should be regarded as the same voltage drop between voltages "throughout this statement One dollar difference, this voltage difference is approximately equal to any thunder ^ ^ ^ ^ -6 »The boundary voltage drop should be a pressure difference of approximately 0.6 volts, but 200422817 V. Description of the invention (6) 疋 It should be understood that if different The transistor will have different values. In this illustrative embodiment, the critical voltage of any transistor in the power-on reset circuit is substantially the same as the Sft boundary voltage of all other transistors in the power-on reset circuit. With. Although other embodiments may use 1 ^ 103 with different Vt, in this illustrative embodiment, only the single Vt of Sin 3 and the Schmitt trigger circuit are used to determine the power reset trigger level. The power is turned on / off. The voltage is determined according to a reset signal. When the supply signal VDD is unstable, a low-end resistor R2 is connected to the node LB to track VDD. This is different from some known systems. In these known systems, In order to reset the power on, the system uses M0S elements with different Vt. In this system, because the PM0S is used to reduce the DC leakage current, the power reset trigger level may be reduced to 1 · 2 Volts. Referring to a more specific diagram, FIG. 1 is a simple schematic diagram of a power-on reset circuit according to an embodiment of the present invention. The power-on reset circuit shown in the figure includes a voltage divider 10 and a compensation circuit 2. A Schmitt trigger circuit 30, a supply coupling capacitor 40, a first inverter XI, a ground coupling capacitor 60, and a second inverter χ2. 2 is a detailed diagram of a power-on reset circuit according to an embodiment of the present invention. The power-on reset circuit includes the voltage divider 10, the compensation circuit 20, the Schmitt trigger circuit 30, the Supply coupling capacitor 40, the first inverter XI, the ground coupling capacitor 60, the second inverter X2, and a third inverter X3. Continue to refer to FIG. 1 and FIG. 2, the voltage divider 1 The purpose of 〇 is to

第11頁 200422817 五、發明說明(7) 無論供應至該電源^啟重置,路的電源如何變化,例如 熱變化,提供一穩定<電+壓至該史密特觸發器輸入節點LB 以追蹤VDD,由於該穩疋電壓係被提供來當作該史密特觸 發電路的輸入,所以在該史密特觸發器輸入節點LB上的 電壓可以被認為當作一觸發電壓’該電壓分壓器10包含 —電流源電晶體M1、一二極體電晶體M2、一電晶體Μ4、 一高端電阻R1以及〆低端電阻1^2,提供一補償電晶體Μ7 及一緩衝電容(使用一緩衝電晶體Μ8來實施)與該低端電 I1 且器R2並聯。 、 一跨越該電流源電晶體**1的閘源極電壓(等於VD^)產 生一主要電流通過該電流源電晶體M 1及該三極體電晶體 M2,大體上所有的主要電流都流經該電晶體M4(其閘汲極 電壓等於二極體電晶體112的閘源極電壓),該主要電流所 通過的該高端電阻R1以及較大的低端電阻R 2係當作維持 該史密特觸發器的輸入節點LB上輸入電壓的電壓分壓器 1〇 〇 該補償電路20的作用在於’即使在該電壓分壓器1 〇 的其他節點上發生電壓暫態、電流暫態及/或電壓及電流 的熱漂移時,依然維持該史密特觸發器輸入節點LB的電 壓在一相當穩定的電壓。該補償電路包括一 CMOS反相器 (包含一PM0S補償控制電晶體M5及MNM0S補償控制電晶體 M6)以及一補償電晶體Μ7。該PM0S補償控制電晶體Μ5及 N〇MS補償控制電晶體Μ6的閘極端點被連接至該節點LA, 該PM0S補償控制電晶體M5及N0MS補償控制電晶體M6的源Page 11 200422817 V. Description of the invention (7) No matter how the power supply of the circuit changes, such as thermal changes, no matter what power is supplied to the power supply, such as a thermal change, provide a stable < power + voltage to the Schmitt trigger input node LB to Track VDD. Since the stable voltage is provided as the input of the Schmitt trigger circuit, the voltage at the Schmitt trigger input node LB can be considered as a trigger voltage. Device 10 includes a current source transistor M1, a diode transistor M2, a transistor M4, a high-side resistor R1, and a low-side resistor 1 ^ 2. A compensation transistor M7 and a buffer capacitor (using a buffer) are provided. Transistor M8 is implemented) is connected in parallel with the low-side electrical device I1 and R2. A gate-source voltage (equal to VD ^) across the current source transistor ** 1 generates a main current through the current source transistor M 1 and the triode transistor M2, and substantially all the main current flows Through the transistor M4 (its gate-drain voltage is equal to the gate-source voltage of the diode transistor 112), the high-side resistor R1 and the large low-side resistor R 2 through which the main current passes are regarded as maintaining the history. The voltage divider 100 for the input voltage at the input node LB of the Mitte trigger. The function of the compensation circuit 20 is' even if voltage transients, current transients, and // Or the thermal drift of voltage and current, the voltage of the Schmitt trigger input node LB is still maintained at a fairly stable voltage. The compensation circuit includes a CMOS inverter (including a PM0S compensation control transistor M5 and a MNM0S compensation control transistor M6) and a compensation transistor M7. The gate extremes of the PM0S compensation control transistor M5 and NOMS compensation control transistor M6 are connected to the node LA. The PM0S compensation control transistor M5 and NOMS compensation control transistor M6 source

第12頁 200422817 五、發明說明(8) 極端點分別被耦接至該供應信號VDD及接地電位,該pM0S 補償控制電晶體Μ5及N0MS補償控制電晶體M6的汲極端點 均被連接至該補償電晶體Μ 7的閘極端點,形成補償電晶 體閘極端節點LB1。 除了導通該主要電流從電流源電晶體Μ 1到該電晶體 Μ4外,該二極體電晶體M2也在節點LA上產生一電壓,該 電壓隨著該主要電流的增加而增加,換言之,該電流源 電晶體Ml及電晶體Μ4被當作類電阻元件,而該二極體電 晶體被當作一二極體,增加通過該電流源電晶體M丨的電 流將導致卽點L A 1的電壓增加,此外,如此增加電流·將導 致該一極體Μ 2的源極電壓(即節點l A )增加 '由於電晶' 體 M4與電晶體Μ 1同樣是類電阻元件,所以該史密特輸入節 點LB的電壓值也跟著增加,因此,節點LA、la 1及lb的電 壓均正比於通過Μ 1的電流及該電源電壓。 假如該主要電流增加,例如,由於熱變化(例如溫度 增加)改變電流源電晶體Ml的電壓-電流關係,在節點^ 上的電壓增加,結果,該CMOS反相器(即pm〇S補償控制電 晶體Μ5及NM0S補償控制電晶體M6)提供一補償控制電壓, 其減小至該補償電晶體Μ7的閘極端。當溫度增加時,抑 制流經該補償電晶體Μ7的迴授電流的任 電晶體们喜被匹配以維持一相當穩定的;:力通過該:: 電阻R2 ’使得在該史密特觸發器輸入節點LB上的該史密 特觸發器輸入電壓因而維持穩定。一微小漏電流通過該 電壓刀壓器1〇及截止電晶體M3(其作用如同一小变電流Page 12 200422817 V. Description of the invention (8) The extreme points are respectively coupled to the supply signal VDD and the ground potential. The drain extreme points of the pM0S compensation control transistor M5 and NOMS compensation control transistor M6 are connected to the compensation. The gate extreme point of transistor M7 forms the compensation transistor gate extreme node LB1. In addition to conducting the main current from the current source transistor M1 to the transistor M4, the diode transistor M2 also generates a voltage at the node LA, which voltage increases as the main current increases, in other words, the The current source transistor M1 and the transistor M4 are regarded as resistance-like elements, and the diode transistor is regarded as a diode. Increasing the current through the current source transistor M 丨 will cause a voltage at the point LA 1 Increase, in addition, such an increase in current will lead to an increase in the source voltage (ie, node 1 A) of the monolithic body M2; since the transistor M4 is also a resistance-like element like the transistor M1, the Schmitt The voltage at the input node LB also increases. Therefore, the voltages at the nodes LA, la 1 and lb are all proportional to the current through M 1 and the power supply voltage. If the main current is increased, for example, the voltage-current relationship of the current source transistor M1 is changed due to a thermal change (eg, an increase in temperature), and the voltage at the node ^ is increased. As a result, the CMOS inverter (ie pm0S compensation control) Transistor M5 and NMOS compensation control transistor M6) provide a compensation control voltage, which is reduced to the gate terminal of the compensation transistor M7. When the temperature increases, any transistor that suppresses the feedback current flowing through the compensating transistor M7 is matched to maintain a fairly stable; the force is passed through: The resistance R2 'makes the input at the Schmitt trigger The Schmitt trigger input voltage at node LB thus remains stable. A small leakage current passes through the voltage knife 10 and the cut-off transistor M3 (its function is the same as a small variable current

200422817 五、發明說明(9) 源)’防止因供應信號VDD使在該節點LA上的電壓漂移太 遠。另一方面,流經該電流源電晶體M丨的主要電流的任 何減少,例如因為溫度下降而導致的,將減少在節點^ 上的電壓,使得在該補償電晶體Μ 7閘極上的電壓增加, 進而促進電流流經該補償電晶體Μ7,例如,由於溫度降 低’所以該電流將不流經R 2。在本實施例中,儘管該主 要電流變動,但通過該低端電阻R 2的電流大體上仍維持 穩定。 ’200422817 V. Description of the invention (9) Source) 'prevents the voltage on this node LA from drifting too far due to the supply signal VDD. On the other hand, any decrease in the main current flowing through the current source transistor M 丨, for example, due to a decrease in temperature, will reduce the voltage at the node ^, so that the voltage at the gate of the compensation transistor M7 increases. And further promote current to flow through the compensation transistor M7, for example, because the temperature is lowered, the current will not flow through R2. In this embodiment, although the main current fluctuates, the current through the low-side resistor R 2 remains substantially stable. ’

圖3係根據本發明實施例,一組模擬電流源電晶體 Ml :節點LA1及史密特觸發器輸入節點LB在時間上“声 圖不,圖4係根據本發明實施例,一組模擬.在各種⑺^方 供應電壓下,史密特觸發器輸入節點LB的響應X ;圖4,在第-板面(一"中是在供應信號圖為2不?。伏參 器輸ΓΐΠ25。。、25t及85°c時’該史密特觸香 幾乎是重疊的。在第二板面(panel 2)中是在供-二:二 牿3伏特而溫度分別為_25 〇c、25及85艽時該》史^ 柄觸發器輸入節點LB的電壓值在時間上的圖形,f 一 就為3· 7伙特,而溫度分別為-25 〇c、25它及85 形,’,史,特觸發器輸入節點LB的電壓值在時間上Figure 3 is an embodiment of the present invention, a set of analog current source transistor Ml: node LA1 and Schmitt trigger input node LB in time "sound diagram is not, Figure 4 is according to an embodiment of the present invention, a set of simulations. The response X of the Schmitt trigger input node LB under various supply voltages is shown in Fig. 4. On the first board (a ", the supply signal diagram is 2). The voltmeter input is ΓΐΠ25. At 25t and 85 ° C, the Schmidt contact is almost overlapped. In the second panel (panel 2), the supply is -2: 2 牿 3 volts and the temperature is _25 〇c, 25 And at 85 o'clock, "history ^ The graph of the voltage value of the input node LB of the handle trigger in time, f is 3.7 units, and the temperature is -25 ° c, 25 °, and 85 °, ' History, special trigger input node LB voltage value in time

八中二個圖形幾乎是重昼的。 、 史密係被用來當作一電容,以平緩在該 符觸發Is輸入郎點L Β上電壓的任何暫態變動。The two figures in the Eighth Middle School are almost daylight. The Smith system is used as a capacitor to gently trigger any transient changes in the voltage on the Is input Lang point L Β at this symbol.

200422817 五、發明說明(10) 史密特觸發電路的目的在於提供一電源開啟重置信 號’假如該供應信號V D D的電壓從接地電位(或者從一扑 零電壓’例如1伏特)開始增加,那麼該電源開啟重置信 號的電壓值將隨著供應信號VDD的電壓值增加,並在該供 應信號VDD超過一臨界電壓時,急速下降。(藉由上升接 著急速下降,該史密特觸發電路可以在該史密特觸發電 路輸出端的反相器產生一電源開啟重置信號。).假如該供 應信號VDD從明顯大於接地電位的任一電壓值開始增加 (例如從休眠狀態恢復),那麼該電源開啟重置信號的電 f,維持接近零(即在接地電位),此外,電源開啟重、置 信號的振幅因應供應信號從操作電壓減少垒零或近似零 電,(關聯電源下降狀態)而減少,反之,電源開啟重置 信號的振幅因應供應信號從零或近似零電壓(關聯電源下 降狀態)增加至操作電壓而增加。 ,這些電晶體當作可變電阻來運作可能有助於了解 該史密特觸發器的運作,在這些電晶體中,每一電晶體 源極及 '及極之間的"電阻值”係受控於閘極電壓,當一 NM0S電晶體的閘極電壓增加時,在該NM〇s電晶體的源極 及$極之間的,,電阻值"減少,而當一PM0S電晶體的閘極 電壓增加時,在該PM0S電晶體的源極及汲極之間的”電阻 值π增加。200422817 V. Description of the invention (10) The purpose of the Schmitt trigger circuit is to provide a power-on reset signal 'if the voltage of the supply signal VDD increases from the ground potential (or from a voltage of zero', such as 1 volt), then The voltage value of the power-on reset signal increases with the voltage value of the supply signal VDD, and decreases rapidly when the supply signal VDD exceeds a threshold voltage. (By rising and then falling rapidly, the Schmitt trigger circuit can generate a power-on reset signal at the inverter at the output of the Schmitt trigger circuit.) If the supply signal VDD is from any one that is significantly greater than the ground potential The voltage value starts to increase (for example, resume from hibernation state), then the power f of the power-on reset signal remains close to zero (that is, at the ground potential). In addition, the power-on reset and signal amplitude decrease from the operating voltage in response to the supply signal The level of zero or near zero power decreases (associated power down state), and conversely, the amplitude of the power-on reset signal increases as the supply signal increases from zero or near zero voltage (associated power down state) to the operating voltage. The operation of these transistors as variable resistors may help to understand the operation of the Schmitt trigger. In these transistors, the source of each transistor and the "resistance value" between them are Controlled by the gate voltage, when the gate voltage of an NMOS transistor is increased, between the source and the $ of the NMOS transistor, the resistance value decreases, and when a PM0S transistor is As the gate voltage increases, the "resistance value π" between the source and the drain of the PMOS transistor increases.

^史密特觸發電路包括一 PM0S初始化電晶體Μ 10、一 _密特觸發電晶體Ml 1、一失能(disable)電晶體 、一Rc電晶體M13以及一迴授電晶體M14。該PM0S初始^ The Schmitt trigger circuit includes a PM0S initialization transistor M10, a _Mitt trigger transistor Ml1, a disable transistor, an Rc transistor M13, and a feedback transistor M14. The PM0S initial

第15頁 200422817Page 15 200422817

4匕電 點LB 接至 晶體Ml 0具有-閘極端被耦接至史密 ,一源極端麵接到供應信號VDD,以及一 2 ,之f 有一 極端 臨界 至該 強化 電晶 源極 該供 -重置信號節训。該NM0S史密特觸發電晶才=: 閘極端被耦接至該史密特觸發器輸入節點八 被麵接至重置信號節點T1,以及汲極被:f 強化節點T 3。該失能電晶體μ 1 2且;# ρ〇' 史密特觸發器輸入節點LB,一源極端被耦接至臨@ # 節點T3,以及汲極端被耦接到一接地電位。該迴授 體M14具有一閘極端被耦接至該重置信號節點^ ,x一 端被耦接至臨界強化節點τ 3,以及汲極端被 1 應信號VDD。 4The 4 d electrical point LB is connected to the crystal M10. The -gate terminal is coupled to Smith, a source terminal is connected to the supply signal VDD, and a 2, where f has an extreme threshold to the enhanced transistor source. Reset signal training. The NM0S Schmitt trigger transistor is: the gate terminal is coupled to the Schmitt trigger input node, and the drain terminal is connected to the reset signal node T1, and the drain terminal is strengthened by: f node T3. The disabling transistor μ 1 2 and; # ρ〇 'Schmitt trigger input node LB, a source terminal is coupled to the neighboring @ # node T3, and a drain terminal is coupled to a ground potential. The feedback body M14 has a gate terminal coupled to the reset signal node ^, an x terminal is coupled to the critical strengthening node τ 3, and a drain terminal is responded to a signal VDD. 4

該史密特觸發電路藉由響應在該PM0S初始化電晶體 1 〇的源極知上所見的供應信號V D D的變化,以達成該電 ^原開啟重置電路的目的,在電壓分壓器丨〇及截止電晶體 Μ9在該PM〇S初始化電晶體Μ1〇的閘源極端之間維持一相當 j小電壓差’並在該pM〇s初始化電晶體Μ丨〇的閘極端盥誃 NM〇S史密特觸發電晶體M11及該失能電晶體〇2的源極端Μ ^間維持一相當大的電壓差,因此,在正常操作期間, =如,。當供應信號VDD在其操作電壓時,作用在該史密特 2發器輸入節點LB上的電壓大到足以致能該NM0S史密特 觸發電晶體Mil與該失能電晶體M12的導通。The Schmitt trigger circuit responds to the change in the supply signal VDD seen in the source knowledge of the PM0S initialization transistor 10 to achieve the purpose of the reset circuit of the transistor, in the voltage divider. And the cut-off transistor M9 maintains a fairly small voltage difference between the gate source extremes of the PMOS initialized transistor M10 and the NMOS history of the gate extremes of the pMOS initialized transistor M10. A considerable voltage difference is maintained between the Mitte trigger transistor M11 and the source terminal M of the disabling transistor 02, and therefore, during normal operation, such as =. When the supply signal VDD is at its operating voltage, the voltage acting on the input node LB of the Schmitt 2 generator is large enough to enable the conduction between the NMOS Smitt trigger transistor Mil and the disabling transistor M12.

特別地’在正常操作期間,當該供應信號VDD在其操 電壓時,在該史密特觸發器輸入節點LB上的電壓允許、 通過該NM0S史密特觸發電晶體Mn與該失能電晶體Ml2的In particular, during normal operation, when the supply signal VDD is at its operating voltage, the voltage on the Schmitt trigger input node LB allows the transistor Mn and the disabling transistor to be triggered by the NMOS Smith. Ml2

200422817 五、發明說明(12) 電流遠大於通過該PM0S初始化電晶體Ml 0的電流,在該史 密特觸發器輸入節點LB上的高電壓使該PM0S初始化電晶 體M10具有一很高的阻抗,但使該NM0S史密特觸發電晶體 Μ 1 1與該失能電晶體Μ 1 2具有一很低的阻抗,因此,在正 常操作期間,該重置信號節點Τ 1及臨界強化節點Τ3都釋 放在NM0S史密特觸發電晶體Ml 1與該失能電晶體Μ12之中 所有的剩餘電荷。200422817 V. Description of the invention (12) The current is much larger than that of the PM0S initialization transistor M10. The high voltage at the Schmitt trigger input node LB makes the PM0S initialization transistor M10 have a very high impedance. However, the NM0S Schmitt trigger transistor M 1 1 and the disabling transistor M 1 2 have a very low impedance. Therefore, during normal operation, the reset signal node T 1 and the critical strengthening node T 3 are released. All remaining charges in the NMOS schmitt trigger transistor M11 and the disabling transistor M12 are triggered.

圖5係根據本發明實施例,一組模擬該重置信號節點 T1 ( 11 )及臨界強化節點T3( t3)對各種準位的供應信$ VDD(vdd)的響應圖示。特別地,上面的面板係該供應1信 號VDD在時間上的圖形,而下面的面板係該•重置信號節點 T1及臨界強化節點T3對應該第一面板供應信號VDD在時間 上的圖形,其中實線表示重置信號節點了丨,而虛線表示 臨界強化節點T 3,在該用以說明的模擬圖中,當該供應 ,號VDD在其操作電壓時,該重置信號節點T1及臨界強化 節點T3為零,在此模擬圖中該供應信號VDJ)約為3 . 3伏 特。 圖6係一組說明當該供應信號VDD轉換經過最初的電 源上升、休眠模式、電源下降以及後來的電源上升時,FIG. 5 is a diagram illustrating the response of a group of simulated reset signal nodes T1 (11) and a critical strengthening node T3 (t3) to supply signals $ VDD (vdd) at various levels according to an embodiment of the present invention. In particular, the upper panel is the time pattern of the supply 1 signal VDD, while the lower panel is the time pattern of the reset signal node T1 and the critical strengthening node T3 corresponding to the first panel supply signal VDD. The solid line indicates the reset signal node, and the dashed line indicates the critical strengthening node T 3. In the simulation diagram used for illustration, when the supply number VDD is at its operating voltage, the reset signal node T1 and the critical strengthening The node T3 is zero. In this simulation, the supply signal VDJ) is about 3.3 volts. FIG. 6 is a set of explanations when the supply signal VDD transitions through the initial power-up, sleep mode, power-down, and subsequent power-up,

該脈衝(對應錶重置信號節點τ丨)對各種準位的該供 應化IVDD的響應圖示。從該最初的電源上升開始,該供 應信號在最初的準位約為〇伏特,在這個低準位,該史密 $觸器輸入節點LB低到足以允許該”〇3初始化電晶體 通’使得該重置信號節點T1追蹤該供應信號¥1)〇,The response of the pulse (corresponding table reset signal node τ 丨) to the supply IVDD at various levels is shown graphically. Starting from the initial power rise, the supply signal is approximately 0 volts at the initial level. At this low level, the Smith contactor input node LB is low enough to allow the "03 initialization transistor to pass" so that The reset signal node T1 tracks the supply signal ¥ 1) 〇,

200422817 五、發明說明(13) 同樣地’該史密特觸發電晶體乂丨1及該失能電晶丨2被 截止’而且該臨界強化節點Τ3是低壓的。當該供應信號 VDD上升時,該重置信號節點Τ1持續被來自該PM0S初始化 電晶體Μ 1 0的電流充電,直到該重置信號節點τ丨的電位大 到足以^啟該迴授電晶體M14,在該迴授電晶體M14開啟 時’該臨界強化節點T3被該供應信號VDD通過該迴授電晶 ,Μ 1 4時所產生的電流充電。在開始充電後,該臨界強化 節點Τ3提升該NM0S史密特觸發電晶體Ml 1的臨界電壓,使 該史岔特觸發器輸入節點LB無法輕易開啟該史密特觸發 器’該現象係反映在一較大脈衝A (其中該臨界強化節’點 T3被充電)與一較小脈衝B(其中該臨界強化•節點T3沒有被 充電)的關係。當該供應信號持續上升時,該史密特觸發 器輸入節點LB的電位將變大到足以截止該PM0S初始化的 電晶體Μ 1 0以及同時開啟該史密特觸發電晶體μ 1 1及該失 能電晶體Μ 1 2以從該重置k滅郎點Τ1及臨界強化節點τ 3排 出電荷。 在本說明中,當該供應信號VDD達到約2. 7伏特的操 作電壓時,該史密特觸發器輸入節點LB的電位約為1. 5伏 特,該電位大到足以開啟乂 1 〇以對該重置信號節點T3充 電,而且該電位足以開啟該史密特觸發電晶體Ml 1及該失 能電晶體M12以從該重置信號節點T1及臨界強化節點τ 3排 出電荷,既然該臨界強化郎點Τ 3沒有充電,該史密特觸 發電晶體的臨界電壓沒有上升,該臨界電壓係反映在該 相當小的脈衝Β,陳述如下。 200422817 五、發明說明(14) _ 岸广:參,;圖6,休眠模式係被定義為發生在,當兮供 位時,例如,在休眠槿十如沒有元王處在一電源下降電 對於接地電位可Ϊ處該///號_的電a相 P·初始化電位沒有低到足 0Γ 以對該重置信號節點T1充電,卄 ;’ 特㈣器輸入節點LB具有相當高的電 位,所以該史密特觸發器雷曰 nrw电 = 器電晶體MU及失能電晶體二Λ,: 鳊而沒有對該重置信號節點Τ 1充電。 ^ 口在,休眠模式後進入一電源下降操作,詨 ί Ϊ作二1該供應信號VDD從其操作電壓轉換到二近似零 電壓,^本說明中,該近似零電壓約為1伏特。 電源下降前,該供應信號VDD具有一2 , 進以 該史密%特适觸發器輸入節點1^具有約15伏特的電位立’該 5伏:5 :開啟以對該重置信號節點T3充電, 且該1.5伏特的電位亦足以開啟該史密特觸發器電晶體200422817 V. Description of the invention (13) Similarly ‘the Schmitt trigger transistor 乂 1 and the disabling transistor 丨 2 are cut off’ and the critical strengthening node T3 is low voltage. When the supply signal VDD rises, the reset signal node T1 continues to be charged by the current from the PM0S initialization transistor M 1 0 until the potential of the reset signal node τ 丨 is large enough to turn on the feedback transistor M14. When the feedback transistor M14 is turned on, the critical strengthening node T3 is passed by the supply signal VDD through the feedback transistor, and the current generated at M 1 4 is charged. After charging begins, the critical strengthening node T3 raises the threshold voltage of the NMOS Schmitt trigger transistor M11, so that the Schmitt trigger input node LB cannot easily turn on the Schmitt trigger. This phenomenon is reflected in The relationship between a larger pulse A (where the critical strengthening node 'point T3 is charged) and a smaller pulse B (where the critical strengthening node T3 is not charged). When the supply signal continues to rise, the potential of the Schmitt trigger input node LB will become large enough to cut off the transistor M 1 0 initialized by the PM0S and turn on the Schmitt trigger transistor μ 1 1 and the loss at the same time. The energy transistor M 1 2 discharges electric charges from the reset k vanishing point T 1 and the critical strengthening node τ 3. In this description, when the supply signal VDD reaches an operating voltage of about 2.7 volts, the potential of the Schmitt trigger input node LB is about 1.5 volts, which is large enough to turn on 乂 1 〇 to the The reset signal node T3 is charged, and the potential is sufficient to turn on the Schmitt trigger transistor M11 and the disabling transistor M12 to discharge charges from the reset signal node T1 and the critical strengthening node τ 3. Since the critical strengthening The Lang point T 3 is not charged, and the threshold voltage of the Schmitt trigger transistor does not increase. The threshold voltage is reflected in the relatively small pulse B, stated as follows. 200422817 V. Description of the invention (14) _ Anihiro: ref .; Figure 6, the sleep mode is defined to occur when the confession is provided. The ground potential can be located at the electrical a-phase P · initialization potential of the // signal _ which is not low enough to charge the reset signal node T1, 卄; the special input node LB has a relatively high potential, so The Schmitt trigger said that the nrw transistor = the transistor MU and the disabling transistor two Λ :, without charging the reset signal node T 1. ^ In the sleep mode, a power-down operation is entered, and the supply signal VDD is switched from its operating voltage to two approximately zero voltages. ^ In this description, the approximately zero voltage is approximately 1 volt. Before the power supply drops, the supply signal VDD has a value of 2, and the Smith% special trigger input node 1 has a potential of about 15 volts. The 5 volts: 5: Turn on to charge the reset signal node T3. And the potential of 1.5 volts is enough to turn on the Schmitt trigger transistor

Mil及失能電晶體Μ12以從該重置信號節點τι及臨界 [點: ί電荷,由於該臨界強化節點T3沒有充 ! 4 = 特觸發電晶體Mu的臨界電壓沒有被提 L ί ί反映在有關小脈衝B。當該供應信號㈣ ϋ Ϊμ^ Λ 節點LB的電位下降時,該PM0S初始化 電曰曰體Ml 0將導通電流通過該史密特觸發電晶艘M1 i及失Mil and the disabled transistor M12 take the reset signal node τι and the critical point [point: ί charge, because the critical strengthening node T3 is not charged! 4 = the threshold voltage of the special trigger transistor Mu is not raised L ί is reflected in About small pulse B. When the supply signal ㈣ ϋ Ϊ μ ^ Λ the potential of the node LB drops, the PM0S initialization circuit M10 will turn on the current through the Schmitt to trigger the transistor M1 i and lose power.

ΗΗ

200422817 五、發明說明(15) 能電晶體M12,但是該電流無法有效 截止;而該PM0S初始化電晶體M1〇將 過=史”觸發電晶細及失能電晶二電電J 匕時,该較大電流將開始對該重置信號節點n充電至一 Ϊ ^位。該/置信號節點T1將達到—足以開啟該迴授電 曰曰體M14的广電位^以對該臨界強化節點T3充電.,在充電 μΙι後該^#界邀強化^點73提高該NM〇S史密特觸發電晶體 Mil的界電壓,使传史密特觸發輪入 啟該=觸發器,該現象反映在之後較大的脈衝^易開 在該電源下降模式期間,該供應信號V.DD維持在1伏 寺的電位,而該史密特觸發器輸入節點“維持很低的電 位(例如約0· 2伏特)以允許該PM〇s初始化電晶體M1 〇導 通,使該重置信號節點T 1追蹤該供應信號,同樣地,該 史,特電晶體Mil及失能電晶體M12被截止,而該臨界強 節點T3仍被充電。在離開該電源下降模式後,當供應 信號VDD開始上升,該史密特觸發器輸入節點LB的電位變 大到足以截止該PM0S初始化電晶體mi 〇以及開啟該史密特 觸發電晶體Μ 1 1及失能電晶體M丨2,以從該重置信號節點 T1及臨界強化節點丁3排出電荷。 回頭參照圖3,通過該低端電阻1? 2的漏電流可以藉由 使用一極大的電阻作為該電阻以來限制,由於該低端電 阻R2的功率^耗(可視為熱及電池壽命的損失)近似 V 2 / R ’所以南電阻值的低端電阻R 2可以限制不好的漏電200422817 V. Description of the invention (15) Energy transistor M12, but the current cannot be effectively cut off; and the PM0S initialization transistor M1 will pass = history "when the transistor is triggered and the transistor II is disabled. A large current will begin to charge the reset signal node n to a bit ^. The / set signal node T1 will reach-sufficient to turn on the wide potential of the feedback power M14 to charge the critically enhanced node T3. After charging μΙι, the ^ # world invites to strengthen ^ point 73 to increase the boundary voltage of the NMOS schmidt trigger transistor Mil, so that the pass of Schmitt trigger turns on and off = trigger, this phenomenon is reflected in the later comparison Large pulse ^ Easy to open During the power-down mode, the supply signal V.DD is maintained at a potential of 1 volt, and the Schmitt trigger input node "maintains a very low potential (eg, about 0.2 volts) In order to allow the PM 0s initialization transistor M1 0 to be turned on, the reset signal node T 1 can track the supply signal. Similarly, in this history, the special transistor Mil and the disabled transistor M12 are turned off, and the critical strong node T3 is turned off. Still being charged. After leaving the power-down mode, when the supply signal VDD starts to rise, the potential of the Schmitt trigger input node LB becomes large enough to turn off the PM0S initialization transistor mi 0 and turn on the Schmitt trigger transistor M 1 1 And the disabling transistor M1, 2 to discharge the charge from the reset signal node T1 and the critical strengthening node D3. Referring back to FIG. 3, the leakage current through the low-side resistor 1-2 can be limited by using a very large resistor as the resistor, due to the power consumption of the low-side resistor R2 (which can be considered as a loss of heat and battery life). Approximately V 2 / R 'so the low-side resistance R 2 of the south resistance value can limit bad leakage

第20頁 200422817 五、發明說明(16) 流效應,在此V係在該史密特觸發器輸入節點lb上的電 壓,而R係該低端電阻R 2的電阻值。由於在在該史密特觸 發器輸入節點LB上的電壓近似於IR,一具有適當高電阻 值的該低端電壓R 2允許在該史密特觸發器輸入節點LB上 的電壓以具有一低主要電流維持,在2 · 6到3 · 8伏特及-4 0 到1 0 0 °C之間的待機電流小於1 〇 u A 。在2 · 6到3 · 8伏特及 - 4 0到1 0 0 °C之間的重置信號準位為準確的。 四個串聯的數位反相器接收該重置信號節點τ丨的電 壓,在該第一反相器中,該重置信號節點τ丨的電壓被1應 用到該PM0S輸出驅動電晶體Ml 6及NM0S輸出驅動電‘ ^Page 20 200422817 V. Description of the invention (16) The current effect, where V is the voltage on the Schmitt trigger input node lb, and R is the resistance value of the low-side resistor R 2. Since the voltage at the Schmitt trigger input node LB is approximately IR, a low-side voltage R 2 with a suitably high resistance value allows the voltage at the Schmitt trigger input node LB to have a low The main current is maintained, and the standby current between 2 · 6 to 3 · 8 volts and-40 to 100 ° C is less than 10 u A. Reset signal levels between 2 · 6 to 3 · 8 volts and-40 to 100 ° C are accurate. Four serial digital inverters receive the voltage of the reset signal node τ 丨. In the first inverter, the voltage of the reset signal node τ 丨 is applied to the PM0S output driving transistor M16 and NM0S output drive electric '^

Μ 1 7的閘極端,當該重置信號節點τ 1的電壓•增加時,在該 輸出節點Τ 2上的電壓減少;當重置信號節點τ丨的電壓減 少時,在該輸出節點T2上的電壓增加。 該重置信號節點T 1也被耦合跨接至一供應耦合電晶 體M15,而該輸出節點T2被麵合跨接至一接地耦合電晶體 M18 ’該電晶體M15及M18均被當作一電容器。該第二反相 器X2、第二反相器X3及第四反相器χ4提供一緩衝電流至 該輸出。At the gate of M 1 7, when the voltage of the reset signal node τ 1 increases, the voltage at the output node T 2 decreases; when the voltage of the reset signal node τ 丨 decreases, the output node T 2 The voltage increases. The reset signal node T 1 is also coupled to a supply coupling transistor M15, and the output node T2 is bridged to a ground coupling transistor M18. The transistors M15 and M18 are used as a capacitor. . The second inverter X2, the second inverter X3, and the fourth inverter χ4 provide a buffer current to the output.

圖7 A係根據本發明說明實施例,一組重置信號在㈣ 間上的響應圖示,該重置信號係量測該第四反相器χ4的 輸出端而得的,該信號相當於該重置信號節點η。在該 第一面板中,說明一2· 7伏特的供應信號VDD的電壓波 形,而該第二面板係在_25 t時,該重置信號對應該第 面板供應信號VDD在時間上的圖形,該第三面板係在25FIG. 7A is a diagram illustrating the response of a group of reset signals in time according to an illustrative embodiment of the present invention. The reset signal is obtained by measuring the output terminal of the fourth inverter χ4, and the signal is equivalent to The reset signal node n. In the first panel, the voltage waveform of a 2 · 7 volt supply signal VDD is described, and when the second panel is at _25 t, the reset signal corresponds to the time pattern of the first panel supply signal VDD. The third panel is attached at 25

200422817 五、發明說明(17) c ,該重置信號對應該第一面板供應信號VDD在時間上的 圖形,該第四面板係在8 5 °C ,該重置信號對應該第一面 板供應信號VDD在時間上的圖形。 圖7B係根據本發明實施例,一組重置信號在時間上 1響應圖示,該重置信號係量測該第四反相器χ4的輸出 鳊而得的,該信號相當於該重置信號節點η。在該第一 =,中’說明-3.3伏特的供應信號携的電壓波形,而 ΐ ί 的圖形,該第三面板係在25 °C,該重 第四面板係在8 5 tΞ Ϊ : J V二在么間上的,形.,該 號VDD在時間上的圖形。重置以對應該第一面板供應信 的塑mi r月實施例,一組重置信號在時間上 端:J : % ΐ ί Ϊ號係量測該第四反相器X4的輸出 ΪΓΐ J :3 7 :於該重置信號節點T1。在該第-該第二面板係在-2「ci 的電壓波形,而 應信號VDD在時間上的圖形T U J該第-面板供 置信號對^=係在25t,該重 双択應k ^VDD在時問ρ的si犯 _ 第四面板係在85。(:,該重置 在吁間上的圖形,該 號VDD在時間上的圖形。唬對應該第一面板供應信 圖8 A係根據本發明f 的響應圖示,在第一面板中與:,,且各種信號在時間上 VDD在時間上的波形圖板’七供-3. 3伏特供應電壓 而該第二面板係提供該第四反相200422817 V. Description of the invention (17) c. The reset signal corresponds to the graph of the first panel supply signal VDD in time. The fourth panel is at 85 ° C. The reset signal corresponds to the first panel supply signal. Graph of VDD in time. FIG. 7B is a response diagram of a set of reset signals in time according to an embodiment of the present invention. The reset signal is obtained by measuring the output of the fourth inverter χ4, and the signal is equivalent to the reset. Signal node η. In the first =, 'indicates the voltage waveform carried by the supply signal of -3.3 volts, while the graph of ΐ ί, the third panel is at 25 ° C, and the fourth panel is at 8 5 tΞ Ϊ: JV 二In the shape of the shape, the figure of the number VDD in time. The reset corresponds to the plastic embodiment of the first panel supply letter. A set of reset signals is at the upper end of time: J:% ΐ ί 系 measures the output of the fourth inverter X4 ΪΓΐ J: 3 7: At the reset signal node T1. In the first-the second panel is a voltage waveform of -2 "ci, and the signal VDD should be a graph of the time TUJ. The first-panel supply signal pair ^ = is at 25t, and the heavy double voltage should be k ^ VDD The fourth panel is at 85. (: The pattern of resetting on Yujian, the number of VDD in time. Figure corresponding to the first panel supply letter in Figure 8 A according to The response diagram of the present invention f is shown in the first panel with :, and the waveforms of various signals in time VDD and time in the graph board 'seven supply-3.3 volts supply voltage and the second panel provides the first Quadrature

200422817 五、發明說明(18) 器X4輸出端的重置k號對應該第一面板供應信號νρρ在時 間上的圖形,該第三面板係提供該節點LA電位對應該第 一面板供應信號VDD在時間上的圖形,該第四面板係提供 該史密特觸發器輸入節點LB電位對應該第一面板供應信八 號VDD在時間上的圖形。 〜° 圖8 B係根據本發明實施例,一組各種信號在時間上 vtn響示,在第一面板中,提供―3. 3伏特供應電壓 曰/Λ間Λ的波形圖’而該第二面板係提供在該補償電 :Τ ::郎點LB1電位對應該第一面板供應信號vdd在 i m該第三面板提供該重置信號節點τι電,位 f應5亥第一面板供應信號VDD在時間上的矿形,該第四面 板係提供整個電路的锌嬙雷法斟虛兮够w ® &該笫四面 vnn产μ ι» ^峪的寺機電〃,L對應該第一面板供應信號 VDD在時間上的圖形。 # m 據在圖2中本發明用以說明的實施例電路,其可以 ^ 1,系統中,該電腦系統包括一記憶體用以儲 子=*7及 > 料,’ 一匯流排耦接至該記憶體,以及一微處 =ί 1、,或多工微處理器)根據該指令以響應控制信號及處 、-貝料。該電腦系統包括該電源開啟重置電路產生一電 源開啟重置信號至該微處理器,為了決定一電源重置觸 發準位’該電源開啟重置電路包括一由多個具有一臨界 電壓Vt的M0S元件組成的史密特觸發電路,該電源重置觸 發準位係由在臨界強化節點τ 3上的電壓決定。 該電源重置觸發準位包括一電壓分壓器連接至該史密特 觸發電路的輸入端以追蹤供應信號VDD,該電壓分壓器包200422817 V. Description of the invention (18) The reset k number at the output of the X4 device corresponds to the graph of the first panel supply signal νρρ in time. The third panel provides the node LA potential corresponding to the first panel supply signal VDD at the time. On the graph, the fourth panel provides a graph of the Schmitt trigger input node LB potential corresponding to the first panel supply letter VDD in time. ~ ° Fig. 8 B is a set of various signals that sound vtn in time according to an embodiment of the present invention. In the first panel, a "3. 3 volt supply voltage / / Λ Λ waveform diagram" and the second The panel system provides the compensation voltage: T :: Lang point LB1 potential corresponding to the first panel supply signal vdd, the third panel provides the reset signal node τι, and the bit f should be 5 Hz. The first panel supply signal VDD is at In the shape of time, this fourth panel provides zinc for the entire circuit. The circuit board can be used to w ® & the four sides of the vnn produce μ ι »^ 峪 〃mechanical and electrical equipment, L corresponding to the first panel supply signal Graph of VDD in time. # m According to the circuit of the embodiment of the present invention illustrated in FIG. 2, it can be ^ 1. In the system, the computer system includes a memory for storing the sub == 7 and > material, a bus coupling To the memory, and a micro processor = ί 1, or multiplexed microprocessor) according to the instruction in response to the control signal and processing,-shell material. The computer system includes the power-on reset circuit to generate a power-on reset signal to the microprocessor. In order to determine a power reset trigger level, the power-on reset circuit includes a plurality of Schmitt trigger circuit composed of M0S elements. The power reset trigger level is determined by the voltage at the critical strengthening node τ 3. The power reset trigger level includes a voltage divider connected to the input of the Schmitt trigger circuit to track the supply signal VDD. The voltage divider package

第23頁 200422817 五、發明說明(19) 括一電流源電 應信號,例如 電晶體Μ 1的源 阻值的低端電 的高阻值係用 該電源開 小重置脈衝來 如,該微小重 補償電路因應 流以補償在該 該迴授電流係 該史密特 源開啟重置信 器輸入節點LB 與一第一臨界 點Τ3決定,該 號低於該第一 由一接地電位 路進入休眠模 界電壓比較時 到該接地電位 式,該重置信 應。 從以上的 晶體,例如,電流源電晶體Ml ,因應一供 ’供應信號VDD(明顯地,連接在該電流源 極)’產生一電流。該電壓分壓器包括一高 阻,特別地,該低端電阻R2,該低端電阻 來降低漏電流。 啟,置電路更包括一補償電路以產生一微 補償因溫度及供應信號的變動效應,例 置脈衝係流經該補彳員電晶體Μ 7的電流,該 —變化,例如,溫度變化,調整一迴授g 士密特觸發電路輸入端上的電壓,例& , 流經該補償電晶體M7的電流1 ^發電路包括一重置信號節點,對應該電 ,。該史密特觸發電路比較該史密特觸發 t電壓(該電壓與該供應信號的電壓有關) 1壓二該第一臨界電壓係由該臨界強化節 # ί ί號節點具有一電壓,假如該供應信 臨界電壓,當該供應信號上升時,該電壓 ^升,一第一電壓。假如該史密特觸發電 式,*該供應信號沒有順利地與該第一臨 ’該重置信號節點的電壓由該第^電壓降 丄假如該史密特觸發電路沒有進入休眠模 號節點大體上對該供應信號的變化沒有反 敘述,在該領域中熟習該項技藝的人士將Page 23 200422817 V. Description of the invention (19) Including a current source response signal, such as the low-end value of the source resistance of transistor M1, the high-resistance value uses the power supply to turn on a small reset pulse, such as the micro The recompensation circuit responds to the current by the Schmitt source to reset the input node LB of the Schmitt source and a first critical point T3, which is lower than the first and enters sleep by a ground potential circuit. When the mode boundary voltage is compared to the ground potential type, the reset response should be made. A current is generated from the above crystal, for example, the current source transistor M1 in response to a supply signal VDD (obviously, connected to the current source). The voltage divider includes a high resistance, in particular, the low-side resistance R2, which is used to reduce leakage current. In addition, the setting circuit further includes a compensation circuit to generate a micro-compensation due to the effect of temperature and supply signal fluctuations. For example, the pulse current is passed through the compensation transistor M7. The change, for example, temperature change, adjustment A feedback voltage on the input terminal of the Schmitt trigger circuit, such as & current flowing through the compensation transistor M7, includes a reset signal node corresponding to electricity. The Schmitt trigger circuit compares the Schmitt trigger voltage (the voltage is related to the voltage of the supply signal). The voltage of the first threshold voltage is set by the critical strengthening section # ί No. 1 node has a voltage. The critical voltage of the supply signal, when the supply signal rises, the voltage rises, a first voltage. If the Schmitt trigger type, * the supply signal does not smoothly match the voltage of the first signal node of the reset signal by the third voltage drop. If the Schmitt trigger circuit does not enter the sleep mode node generally There is no counter-narration of the change in the supply signal, and those who are familiar with the art in this field will

200422817 五、發明說明(20) 了解到,本發明的方法可以增益電源供應電路的結構’ 特別是電源供應電路的電源開啟重置,上述所提供作為 例示的實施例並未限定本發明的範圍,對在該領域中熟 習該項技藝的人士而言,將可以根據前述詳細說明的精 神改變或調整所揭露的實施例,例如,調整這些實施例 可以包括一或多個各種/不同態樣的補償電路、電壓分壓 器及史密特觸發電路,另外,對於熟習該項技藝的人士 而言,在此所揭露的實施例的其他組合、移除、替代及 修改將是很顯然的,因此,本發明並不僅限於所揭露1的 實施例,而是由申請專利範圍來決定。 /200422817 V. Description of the invention (20) It is understood that the method of the present invention can gain the structure of the power supply circuit ', especially the power-on reset of the power supply circuit. The embodiments provided above as examples do not limit the scope of the present invention. For those skilled in the art, the disclosed embodiments may be changed or adjusted according to the spirit of the foregoing detailed description. For example, adjusting these embodiments may include one or more compensations of various / different aspects. Circuit, voltage divider, and Schmitt trigger circuit. In addition, for those skilled in the art, other combinations, removals, substitutions, and modifications of the embodiments disclosed herein will be obvious. Therefore, The present invention is not limited to the disclosed embodiment 1, but is determined by the scope of patent application. /

第25頁 200422817 圖式簡單說明 圖式簡單說明 圖1係根據本發明實施例之電源開啟重置電路的概念 不意圖, 圖2係根據本發明實施例之電源開啟重置電路的詳細 不意圖; 圖3係根據本發明實施例,一組模擬電流源電晶體 Ml(ml)、節點LA(la)、節點LAl(lal)及一史密特觸發電 路輸出節點L B ( 1 b )在時間上的響應圖示; 圖4係根據本發明實施例,一組模擬在各種溫度及供 應電壓下,節點L B的響應圖示; ^Page 25 200422817 Brief description of the drawings Brief description of the drawings FIG. 1 is a schematic diagram of a power-on reset circuit according to an embodiment of the present invention, and FIG. 2 is a detailed diagram of a power-on reset circuit according to an embodiment of the present invention; FIG. 3 shows the time series of a group of analog current source transistors Ml (ml), node LA (la), node LAl (lal), and a Schmitt trigger circuit output node LB (1b) according to an embodiment of the present invention. Response diagram; Figure 4 is a set of simulation diagrams of the response of node LB under various temperatures and supply voltages according to an embodiment of the present invention; ^

圖5係根據本發明實施例,一組模擬該.重置信號節點 T1 (tl)及臨界強化節點T3(t3)對各種準位的供應信號 VDD(vdd)的響應圖示; 圖6係根據本發明實施例,一組模擬當該供應信號 VDD轉變經過最初的電源上升、休眠模式、電源下降及隨 後的電源上升時,在第四反相器輸出端的重置信號對各 種準位的供應信號VDD的響應圖,該信號對應在重置節點 T 1上的信號; ^ 圖7A係根據本發明實施例,一組模擬當供應信號VDD 為2·7伏特時’重置信號對各種溫度在時間上的響應圖;FIG. 5 is a diagram illustrating the response of a set of reset signal nodes T1 (tl) and critical strengthening nodes T3 (t3) to various levels of supply signals VDD (vdd) according to an embodiment of the present invention; FIG. 6 is based on In the embodiment of the present invention, a set of simulation supply signals at various levels when the supply signal VDD transitions through the initial power-up, sleep mode, power-down, and subsequent power-up is applied to various levels. The response diagram of VDD, this signal corresponds to the signal on the reset node T 1; ^ FIG. 7A is a set of simulations according to the embodiment of the present invention, when the supply signal VDD is 2.7 volts' Response graph

圖7Β係根據本發明實施例,一組模擬當供應信號VDD 為3.3伏特時’重置信號對各種溫度在時間上的響應圖; 圖7C係根據本發明實施例,一組模擬當供應信號VDD 為3 · 7伏特時’重置信號對各種溫度在時間上的響應圖;FIG. 7B is a time response diagram of a reset signal to various temperatures when the supply signal VDD is 3.3 volts according to an embodiment of the present invention; FIG. 7C is a set of analog time supply signals VDD according to an embodiment of the present invention Time response graph of reset signal to various temperatures at 3.7 volts;

第26頁 200422817 圖式簡單說明 圖8A係根據本發明實施例,一組模擬供應信號VDD、 重置信號節點T1 、節點LA及史密特觸發器輸入節點LB對 各種溫度在時間上的響應圖;以及 圖8B係根據本發明實施例,一組模擬供應信號VDD、 補償電晶體閘極端節點LB1 ( lbl )、重置信號節點T1及整 個電路的備用電流在時間上的響應圖。 圖式標號說明 10 電 壓 分 壓 器 20 補 償 電 路 30 史 密 特 觸 發 電路 40 供 應 耦 合 電 容 60 接 地 耦 合 電 容Page 26 200422817 Schematic illustration Figure 8A is a time response diagram of a set of analog supply signal VDD, reset signal node T1, node LA and Schmitt trigger input node LB to various temperatures according to an embodiment of the present invention And FIG. 8B is a response diagram in time of a set of analog supply signals VDD, a compensation thyristor extreme node LB1 (lbl), a reset signal node T1, and a standby current of the entire circuit according to an embodiment of the present invention. Description of figure symbols 10 Voltage divider 20 Compensation circuit 30 Schmitt trigger circuit 40 Supply coupling capacitor 60 Ground coupling capacitor

第27頁Page 27

Claims (1)

200422817 六、申請專利範圍 申請專利範圍 1. 一種電源開啟重置電路,包括: 一史密特觸發電路,由多個具有一臨界電壓vt的M0S 元件組成,以決定一電源重置觸發準位;以及 一電壓分壓器,連接至該史密特觸發電路的輸入 端,用以追蹤一供應信號。 2. 如申請專利範圍第1項之電源開啟重置電路,更包 括一補償電路產生一微小重置脈衝,以補償溫度及該供 應信號的變動效應。 > 3. 如申請專利範圍第1項之電源開啟重置電路,/其中 該電壓分壓器包括一電流源電晶體因應該供應信號以產 生一電流。 4. 如申請專利範圍第1項之電源開啟重置電路,其中 該電壓分壓器包括一高阻值的低端電阻以減少漏電流。 5. 如申請專利範圍第1項之電源開啟重置電路,其中 該電壓分壓器包括一補償電路因應該供應信號的變動調 整一迴授電流以維持在該史密特觸發電路輸入端上的電 壓。 6 ·如申請專利範圍第1項之電源開啟重置電路,其中 該史密特觸發電路更包括一臨界強化節點,當該史密特 觸發電路進入或離開電源下降模式時,該節點具有一大 於零的第一電壓,當該史密特觸發電路進入或離開休眠 模式時,該節點具一第二電壓小於該第一電壓。 7.如申請專利範圍第1項之電源開啟重置電路,其中200422817 6. Scope of patent application Patent scope of application 1. A power-on reset circuit, comprising: a Schmitt trigger circuit composed of a plurality of M0S elements with a threshold voltage vt to determine a power reset trigger level; And a voltage divider connected to the input of the Schmitt trigger circuit for tracking a supply signal. 2. If the power-on reset circuit of item 1 of the patent application scope includes a compensation circuit to generate a tiny reset pulse to compensate for the temperature and the effect of the supply signal. > 3. If the power-on reset circuit of item 1 of the scope of patent application, / wherein the voltage divider includes a current source transistor to generate a current in response to a supply signal. 4. The power-on reset circuit of item 1 of the patent application range, wherein the voltage divider includes a low-end resistor with a high resistance value to reduce leakage current. 5. The power-on reset circuit of item 1 of the patent application range, wherein the voltage divider includes a compensation circuit that adjusts a feedback current in response to a change in the supply signal to maintain the current at the input of the Schmitt trigger circuit. Voltage. 6 · If the power-on reset circuit of item 1 of the patent application scope, wherein the Schmitt trigger circuit further includes a critical strengthening node, when the Schmitt trigger circuit enters or leaves the power down mode, the node has a greater than The first voltage is zero. When the Schmitt trigger circuit enters or leaves the sleep mode, the node has a second voltage smaller than the first voltage. 7. The power-on reset circuit such as the one in the scope of patent application, where 第28頁 200422817 六、申請專利範圍 該史密特觸發電路更包括一重置信號節點,假如該史密 特觸發電路未進入一休眠模式,當該供應信號與一第一 臨界電壓比較時,因應該供應信號的增加,該節點由接 地電位上升至一第一電壓,當該供應信號未與該第一臨 界電壓比較時,該節點由該第一電壓下降至該接地電 位。 8. 如申請專利範圍第1項之電源開啟重置電路,其中 該史密特觸發電路更包括一重置信號節點,當該史密特 觸發電路進入一電源下降模式時,該節點具有一第一1電 壓峰值,當該史密特觸發電路離開該電源下降模式^, 該節點具有一第二電壓峰值大於該第一電壓峰值。 9. 如申請專利範圍第8項之電源開啟重置電路,其中 當該史密特觸發電路進入及離開一休眠模式時,該重置 信號節點更具有一第三電壓小於該第一電壓峰值。 10. —種因應一供應信號提供一重置信號的方法,包 括下列步驟: 因應該供應信號產生一主要電流; 因應該主要電流產生一觸發電壓; 假如未進入休眠模式且該供應信號未與一第一臨 界準位比較時,該重置信號因應該供應信號的 增加,由一參考電位增加至一第一電位;以及 假如未進入休眠模式而該供應信號與該第一臨界 準位比較時,設定該重置信號至該參考電位。 1 1 ·如申請專利範圍第1 0項之方法,其中:Page 28 200422817 6. Scope of patent application The Schmitt trigger circuit further includes a reset signal node. If the Schmitt trigger circuit does not enter a sleep mode, when the supply signal is compared with a first threshold voltage, Should the supply signal increase, the node rises from the ground potential to a first voltage. When the supply signal is not compared with the first threshold voltage, the node drops from the first voltage to the ground potential. 8. If the power-on reset circuit of item 1 of the patent application scope, wherein the Schmitt trigger circuit further includes a reset signal node, when the Schmitt trigger circuit enters a power down mode, the node has a first A 1 voltage peak, when the Schmitt trigger circuit leaves the power-down mode, the node has a second voltage peak greater than the first voltage peak. 9. The power-on reset circuit according to item 8 of the patent application, wherein when the Schmitt trigger circuit enters and leaves a sleep mode, the reset signal node has a third voltage smaller than the first voltage peak. 10. —A method for providing a reset signal in response to a supply signal, including the following steps: a main current is generated in response to the supply signal; a trigger voltage is generated in response to the main current; if the sleep mode is not entered and the supply signal is not connected to a When the first critical level is compared, the reset signal is increased from a reference potential to a first potential in response to an increase in the supply signal; and when the supply signal is compared with the first critical level without entering the sleep mode, Set the reset signal to the reference potential. 1 1 · The method of item 10 in the scope of patent application, where: 第29頁 200422817 六、申請專利範圍 當進入電源上升狀態時,該重置信號因應該供應 信號的增加,由該參考電位增加至該第一電 位; 當進入電源下降狀態時,該重置信號因應該供應 信號的減少由該參考電位增加至一第二電位; 以及 該第一電位大於該第二電位。 1 2.如申請專利範圍第1 1項的方法,更包括因應溫度 的變化補償該觸發電壓,其中因應該溫度變化補償該_觸 發電壓包括下列步驟: ’ 提供一主要電流路徑,其具有一電流對應該觸發電 壓;以及 在一電路中具有一與一電流源相關的互補溫度係 數,調整該主要電流路徑的電流以補償該與溫度 相關的電流的變化。 13.如申請專利範圍第12項的方法,其中調整該主要 電流路徑的電流以補償該與溫度相關的電流的變化包 括: 提供一補償路徑與該電流路徑的低端部分並聯;以 及 因應該主要電流的減少,增加在該補償路徑上的補 償電流,並因應該主要電流的增加,減少在該補 償路徑上的補償電流。 14 · 一種電腦系統,包括:Page 29 200422817 6. Scope of patent application When entering the power-up state, the reset signal should increase from the reference potential to the first potential due to the increase of the supply signal; when entering the power-down state, the reset signal is due to The decrease in the supply signal should be increased from the reference potential to a second potential; and the first potential is greater than the second potential. 1 2. The method according to item 11 of the scope of patent application, further comprising compensating the trigger voltage in response to a change in temperature, wherein compensating the trigger voltage in response to a change in temperature includes the following steps: 'Provide a main current path with a current Corresponding to the trigger voltage; and having a complementary temperature coefficient associated with a current source in a circuit, adjusting the current of the main current path to compensate for changes in the temperature-dependent current. 13. The method of claim 12, wherein adjusting the current of the main current path to compensate for changes in the temperature-related current includes: providing a compensation path in parallel with the low-end portion of the current path; and responding to the main The reduction of the current increases the compensation current on the compensation path, and reduces the compensation current on the compensation path in response to the increase of the main current. 14 · A computer system including: 第30頁 200422817 六、申請專利範圍 一微處理器; 一匯流排,耦接至該微處理器; 一記憶體,耦接至該匯流排;以及 一電源開啟重置電路,俾供產生一電 信號至該微處理器,該電源開啟重置電路包 括: 一史密特觸發電路,由多個具有一臨 M0S元件組成,以決定一電源重置觸發準位 及 一電壓分壓器,連接至該史密特觸發 端,用以追蹤一供應信號。 ‘ 1 5 ·如申請專利範圍第1 4項之電腦系統 開啟重置電路更包括一補償電路產生一微小 以補償溫度及該供應信號的變動效應。 1 6 ·如申請專利範圍第1 4項之電腦系統 分壓器包括一電流源電晶體因應該供應信號 流。 1 7.如申請專利範圍第1 4項之電腦系統 分壓器包括一高阻值的低端電阻以減少漏電 1 8 ·如申請專利範圍第1 4項之電腦系統 分壓器包括一補償電路因應該供應信號的變 授電流以維持在該史密特觸發電路輸入端上 1 9 ·如申請專利範圍第1 4項之電腦系統 特觸發電路更包括一重置信號節點,假如史 源開啟重置 界電壓Vt的 ;以 電路的輪入 ,其中該電源 重置脈衝, ,其中該電壓 以產生一電 ,其中該電壓 流。 ,其中該電壓 動調整一迴 的電壓。 ,其中該史密 密特觸發電Page 30 200422817 VI. Patent application scope A microprocessor; a bus coupled to the microprocessor; a memory coupled to the bus; and a power-on reset circuit to generate electricity Signal to the microprocessor, the power-on reset circuit includes: a Schmitt trigger circuit, consisting of a plurality of M0S elements, to determine a power reset trigger level and a voltage divider, connected to The Schmitt trigger terminal is used to track a supply signal. ‘15 • If the computer system of item No. 14 of the scope of patent application, turning on the reset circuit further includes a compensation circuit to generate a micro to compensate for the temperature and the effect of the supply signal. 16 · If the computer system of item 14 of the patent application scope, the voltage divider includes a current source transistor to supply the signal current. 1 7. If the computer system voltage divider of item 14 of the scope of patent application includes a high-resistance low-end resistor to reduce the leakage current 1 8 · If the computer system voltage divider of area 14 of the patent application includes a compensation circuit It should be maintained at the input terminal of the Schmitt trigger circuit according to the variable current of the supply signal. If the special trigger circuit of the computer system under item 14 of the patent application includes a reset signal node, Boundary voltage Vt; take the circuit's turn-in, where the power reset pulse, where the voltage to generate an electric current, where the voltage flows. , Where the voltage will be adjusted once. , Where the Schmitt-triggered electricity 第31頁 200422817 六、申請專利範圍 路未進入一休眠模式,當該供應信號與一第一臨界電壓 比較時,因應該供應信號的增加,該節點由接地電位上 升至一第一電壓,而當該供應信號未與該第一臨界電壓 比較時,該節點由該第一電壓下降至該接地電位。 2 0 .如申請專利範圍第1 4項之電腦系統,其中該史密 特觸發電路更包括一重置信號節點,除不在進入或離開 休眠模式期間外,無論是在電源上升或電源下降模式期 間,該節點因應該供應信號變化由一接地電位上升至一 第一電壓。 、 2 1 .如申請專利範圍第1 4項之電腦系統,其中:’ 該史密特觸發電路更包括一重置信銳,在電源上 升模式期間,該節點因應該供應信號的改變, 由一接地電位上升至一第一電壓,在電源下降 模式期間,該節點因應該供應信號的改變,由 該接地電位上升至一第二電壓;以及 該第一電壓大於該第二電壓。 #Page 31 200422817 6. The patent application range does not enter a sleep mode. When the supply signal is compared with a first threshold voltage, the node rises from the ground potential to a first voltage due to the increase in the supply signal, and when When the supply signal is not compared with the first threshold voltage, the node drops from the first voltage to the ground potential. 20. The computer system according to item 14 of the scope of patent application, wherein the Schmitt trigger circuit further includes a reset signal node, in addition to not entering or leaving the sleep mode, whether during power-up or power-down mode In response to a change in the supply signal, the node rises from a ground potential to a first voltage. 2. 21. The computer system according to item 14 of the scope of patent application, wherein: The Schmitt trigger circuit further includes a reset signal. During the power-up mode, the node should be connected to a ground potential in response to a change in the supply signal. Rises to a first voltage, during the power-down mode, the node rises from the ground potential to a second voltage in response to a change in the supply signal; and the first voltage is greater than the second voltage. # 第32頁Page 32
TW92109841A 2003-04-24 2003-04-24 Power-on reset circuit with supply voltage and temperature immunity, ultra-low DC leakage current, and fast power crash reaction TW200422817A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692200B (en) * 2019-08-27 2020-04-21 大陸商常州欣盛半導體技術股份有限公司 Turning-on and off reset circuit for carrier tape chip and the working method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI692200B (en) * 2019-08-27 2020-04-21 大陸商常州欣盛半導體技術股份有限公司 Turning-on and off reset circuit for carrier tape chip and the working method

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