TW200419706A - Wafer bumping process - Google Patents

Wafer bumping process Download PDF

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Publication number
TW200419706A
TW200419706A TW092106130A TW92106130A TW200419706A TW 200419706 A TW200419706 A TW 200419706A TW 092106130 A TW092106130 A TW 092106130A TW 92106130 A TW92106130 A TW 92106130A TW 200419706 A TW200419706 A TW 200419706A
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Taiwan
Prior art keywords
metal layer
bottom metal
ball
patent application
layer
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TW092106130A
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English (en)
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TW584936B (en
Inventor
Min-Lung Huang
Chi-Long Tsai
Chao-Fu Weng
Ching-Huei Su
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Advanced Semiconductor Eng
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32986168&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200419706(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW092106130A priority Critical patent/TW584936B/zh
Priority to US10/708,707 priority patent/US6921716B2/en
Application granted granted Critical
Publication of TW584936B publication Critical patent/TW584936B/zh
Publication of TW200419706A publication Critical patent/TW200419706A/zh

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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Description

200419706 五、發明說明（l) [發明所屬之技術領域] 本發明疋有關於種晶圓凸塊（solder bumping)製 程，且特別是有關於一種利用薄光阻層成長高凸塊的製 程0 [先前技術] 所謂的晶圓凸塊製程，常見於覆晶技術（f丨丨p ch丨p) 中’其主要是在形成有多個晶片的晶圓上對外的接點（通 常是金屬焊墊）上長出球底金屬層（UBM，UnderBump Metallurgy)，並於球底金屬層之上成長凸塊，最後，晶 片便透過凸塊與基板（substrate)連接。由於（矽）晶片與 基板的熱膨脹係數不同，當基板與晶片之間隙太小時，凸 塊會承受較大的剪應力，便會降低其機械可靠度。 針對上述問題點’可設法形成較高的凸塊，以增大 基板與晶片之間隙，使凸塊承受的剪應力降低，並改善其 機械可靠度。 "八 關於習知技術形成高凸塊的方法，請依序參考第^〜2 圖0 其中標號1 0 0代表晶圓，1 〇 2代表焊 請參考第1圖 墊。保護層104係覆蓋於晶圓100之表面並暴露出焊墊 102。標號1〇6代表球底金屬層（UBM)，全面性地覆蓋保護 層104及焊墊102。在球底金屬層1Q6上先後形成圖案化光 阻層1 08、11 0。藉由增加總光阻層厚度，以增加焊料容 ^。並利用電鑛方法，將錫鉛焊料112充填於圖案化光阻 層108、110的開口中，以形成一較厚的焊料層。其中開口
開口中。形成一第二圖案化光
200419706 五、發明說明（2) 1 08的大小約為1 20 mi 1，且各圖案化光阻層〗08、；[丨〇之厚 度約為1 0 0 m i 1。 接著，請參考第2圖，先後剝除圖案化光阻丨1()、108 以及部份的球底金屬層1 〇 6，再進行一回焊步驟，以使焊 料層形成球體凸塊1 1 2 a。 在上述習知的凸塊製程中，因各圖案化光阻層之開 口小’故藉由多層較厚的光阻層堆積的方式，以達所需的 焊料充填區域之容積。但是，其缺點為製程難度高，因為 在曝光微影製程中，欲形成小而深的開孔具有相當的難 度’是以其良率及可靠度降低。 [發明内容] 一曰為解決習知的問題點，本發明的目的之一係，提出 二種晶圓凸塊製程，可以較習知為薄的光阻層配合較習知 為大的開孔，成長高凸塊。 來p本明的目的之—係’提出一種晶圓凸塊製程，可 ϊίίί二以增大基板與晶片之間隙，使凸塊承受的剪 應力降低，並改善其機械可靠度。 為達成上述及,. 製程，包括提供一晶圓他目具提出一種晶圓凸塊 晶圓表面並暴露出焊熱。二、夕固知塾及一保濩層覆蓋於 層並覆於暴露出之焊墊。° ^成一第一球底金屬層覆於保護 球底金屬層，此第一圖案$成一第一圖案化光阻層於第一 別對應於此些焊塾，並^露光，層具有多個第一開口，分 成一第二球底金屬層於^一出。卩份之第一球底金屬層。形
200419706 五、發明說明（3) 阻層，覆於第一圖案化光阻層，此第二圖案化光阻异旦有 多個第二開口 ，且第二開口之大小係大於第一開口之大 小，以暴露出第二球底金屬層。將一焊料填充於第二開 口，並覆於暴露出之第二球底金屬層。進行一回p牛二， 使焊料形成多個球體凸塊。 + 乂。 ’ 在本發明中，並不限定第二開口的形狀，其 形、方形、彡角形# ’只要其大小足以暴露出球底金屬層 (第二球底金屬層）即可。舉例而言，第二開 可呈； 狀以暴露出球底金屬層（第二球底金屬層）。 #月 依照本發明的特徵’第二開口的二小係大於第一開 二社其目的在於’使填充焊料的開口面積（第二開口）大於
:開口卜依此特徵，在回焊步驟時，焊料 口積』J 較小的球底金屬層（第二球底金屬層汗、 於是焊同料理便Λ朝中 調整第二開口的大V，特二而可：需填入的焊料量適當地 :得較薄而把第二開口做得較：：阻Γ; 填入所需的焊料量。此較簿 奋積里 在製程中尚且有容易施你r〇a ^較大的圖案化光阻層， 優點。’、 "•作（曝光顯影較易）’且良率較高的 同理如上，本發明i 習知技術中"光阻層辦厚/择展光阻層施作高凸塊，一反 想，為具有高度創作性之；f月？施作高凸塊”的技術思
200419706 五、發明說明（4) 為讓本發明之上述和其他目的、特徵、和優點能更 詳細說明如下·· 佳““列，並配合所附圖式，作 [實施方式] [弟一實施例] 請依序參考第3〜10圖，其繪示依照本發明之 施例的晶圓凸塊製程流程剖視圖。 清茶考第3目，提供一晶圓2〇〇，具有多個焊塾及 -保護層204覆蓋於晶圓_之表面並暴露出焊墊2〇2。全 一球底金屬層2〇6覆於保護層204並覆於暴露出 之烊墊204，以作為後續電鍍製程（詳如第5圖之說明）的種 ^層。在此，形成第一球底金屬層2〇6的方法，舉例而 吕，包括濺鍍等。且第一球底金屬層2〇6係選自於由鉻、 鈦、鈦鎢合金、銅、鎳、鉻銅合金、鎳釩合金、鎳金合 金、鋁及該等之組合所組成之組群中的一種材質。 請參考第4圖，形成一第一圖案化光阻層2〇8於第一 球底金屬層206。第一圖案化光阻層208具有多個第一開口 208a，分別對應於焊墊202，並暴露出部份之第一球底#金 屬層206。其中第一圖案化光阻層208之厚度約為3〇〜75 mil，而第一開口 208a之大小（關鍵尺寸Critical
Dimension ， CD)約為160〜250mil 。 請參考第5圖，以上述第一球底金屬層206為種子 層，電鑛形成一第二球底金屬層210於第一開口 2〇8a中。 其中第二球底金屬層210係選自於由鉻、鈦、鈦鎢合金、 l〇789twf.ptd 第10頁 五、發明說明（5) 銅、鎳、鉻銅合金、鎳叙合 合所組成之組群中的—種材錄金合金、銘及該等之組 請參考第6圖，形 約為30〜M mil，覆於第网第安一圖案化光阻層212，厚度 光阻層212具有多個第— 曰208。第一圖案化 叫币_開口212a ，且第一 小係大於第一開口 2〇8 弟一開口 21 2a之大 21〇。 大小，以暴露出第二球底金屬層 請參考第7圖，將一焊料 並覆於暴露出之第二破麻二厘 、《苐一開口 212a， A锡鉼人厶一—表底至屬層21〇。此焊料214之材質可 法，兴你W : 或是金等，且填充焊料214的方 法舉j列而'，包括電鍍及印刷填入等。 加+，触月 > 考第8圖，進行一回焊步驟’使焊料214形成多 個球體凸塊214a。ώ协笙-日日01 Λ 夕 y 由於第一開口212a的大小係大於第一開 a，使得填充焊料214的開口面積（第二開口21 2)大於 、θ = 1 4下方的球底金屬層（第二球底金屬層21 〇)的開口面 積 開口 Μ 8a)。因此’在回焊步驟時，焊料會以開口 面積較小的球底金屬層（第二球底金屬層21〇)為基座，往 j攀附。於是焊料214便會朝中央集中，而高突於第二圖 案化光阻層212(球體凸塊214a的高度h2大於第二圖案化光 阻層21 2的厚度hi)。 卜 接著’請參考第9圖，移除第二圖案化光阻層212及 第一圖案化光阻層208，以暴露出部份之第一球底金屬層 2〇6 °之後，如第丨〇圖，移除暴露出之部份的第一球底金 屬層206。 10789twf.ptd 第11頁 200419706 五 發明說明（6) [第二實施例] 充填Λ上述第一實施例的製程中，若淳料是以電錢方文 真t活’則上述流程還可以稍作變化。亦即式 第—及第一圖案化光阻層，之後再進行回 ^移除 說明過的流程，在此便省略之。 卓…例中已 在第3〜7圖的製程流程之後，亦即，在雷供枯+ 214之後，移除第二圖案化光阻層212及第ί =充焊料 2+〇8 ’以暴露出部份之第一球底金屬層206随層 路出之部份的第一球底金屬層20 6，以成為 多除暴 構。在第11圖中和第-實施例中相同的元件 ，的门结 標號，在此亦省略其說明。 -件“吏用相同的 成找科接參照第1G圖’進行一回焊步驟’使焊料2Η形 成球體凸塊214a。 、上述移除暴露出之部份的第一球底金屬層206的動作 也可以移至在形成球體凸塊2 14a之後再進行。 依照本發明的特徵，並不限定第二開口的形狀，其 可為圓形、方形、多角形等，只要其大小足以暴露出球底 金屬層（第二球底金屬層）即可。舉例而言，如第12圖所 示第一圖案化光阻層312的第二開口 312a係可呈斜角 狀’ _而呈朝第一開口 2〇8a漸縮的方式以暴露出球底金屬層 第二球底金屬層2 1 0 )。在第1 2圖申與第一實施例相同的 元件係採用相同的符號，在此便省略其說明。 依照本發明的特徵，第二開口的大小係大於第一開
200419706 五、發明說明（7) 口，其目的在於，使填充焊料的開口面積（第二開口）大於 焊料下方的球底金屬層（第二球底金屬層）的開口面積（第 一開口）。依此特徵，在回焊步驟時，焊料會以開口面積 較小的球底金屬層（第二球底金屬層）為基座a，往上攀附。 於是焊料便會朝中央集中，而高突於第二圖案化光阻層。 ^ 〃同理如上，依此特徵，可依需填入的焊料量適當地 2 ί 了開口的大小，舉例而言，可把第二圖案化光阻層 而把第二開口做得較大，以調整開口容積量，以 在·鞀：的焊料量。此較薄而開口較大的圖案化光阻層’ 在I权中尚具有容易施作的優點。 反習同Λ如上，本發明可以"薄"光阻層施作”高"凸塊， 思想 想，為度光:作層Λ厚發:層以施作高凸 受的 /^ 雖然本發明已以& ^ 以限定本發明，任何孰=Λ施例揭露如上，然其並非用 神和範圍内，當可作:11技藝者，在不脫離本發明之精 護範圍當視後附：：：=更動與潤*，因此本發明之伴 :d月專利範圍所界定者為準。…呆 l〇789twf.ptd 第13頁 200419706 圖式簡單說明 第1〜2圖繪示習知的晶圓凸塊製程流程剖視圖； 第3圖〜第1 0圖繪示依照本發明之第一實施例的晶圓 凸塊製程流程剖視圖； 第1 1圖繪示當利用電鍍充填焊料之後的製程變化之 例示；以及 第1 2圖繪示依照本發明之較佳實施例的光阻開口之 變化例。 [圖式標示說明]
100 、2 0 0 : 晶 圓 102 、202 : 焊 墊 104 、204 : 保 護層 106 :球底金屬 層 108 、1 10 : 圖 案化 光 阻層 206 、210 : 第 、 第 二球 底 金 屬 層 208 ^ 212 : 第 、 第 二圖 案 化 光 阻層 208a 、212a I 第一 第二 開 Π 214 :焊料 214a :球體凸 塊 312 • 笛 一 圖案化光阻層 312a • 篦- • >P 一 二開 D
10789twf.ptd 第14頁

Claims (1)

  1. 200419706
    1. 一種晶圓凸塊製程，包括· 覆盖於該 提供一晶圓，具有複數個焊墊及一保護層 晶圓表面並暴露出該些焊墊； 形成一第 之該些焊墊； 球底金屬層覆於該保護層並覆於暴露出 ^ 形成一第一圖案化光阻層於該第一球底金屬層，該 第-圖案化光阻層具有複數個第一開口，分別對應於該些 焊墊，並暴露出部份之該第一球底金屬層； — 形成一第一球底金屬層於該些第一開口中； 形^成一第二圖案化光阻層，覆於該第一圖案化光阻 層’该第二圖案化光阻層具有複數個第二開口，該些第二 開口之大小係大於該些第一開口之大小，以暴露出該第二 球底金屬層； 將一焊料填充於該些第二開口，並覆於暴露出之該 第二球底金屬層； 進行一回焊步驟，使該焊料形成複數個球體凸塊； 移除該第二圖案化光阻層及該第一圖案化光阻層， 以暴藤出部份之該第一球底金屬層；以及 移除暴露出之部份的該第一球底金屬層。 2 ·如申請專利範圍第1項所述之晶圓凸塊製程，其中 填充该焊料的方法包括印刷填入。 3·如申請專利範圍第1項所述之晶圓凸塊製程，其中 填充该焊料的方法包括電鑛^。 4 ·如申請專利範圍第3項所述之晶圓凸塊製程’其中
    10789twf.ptd 第15頁 200419706 六、申請專利範圍 該回焊步驟係在移除該第二圖案化光阻層、該第一圖案化 光阻層及該第一球底金屬層之後進行。 5. 如申請專利範圍第3項所述之晶圓凸塊製程，其中 該回焊步驟係在移除該第二圖案化光阻層、該第一圖案化 光阻層之後，且在移除該第一球底金屬層之前進行。 6. 如申請專利範圍第1項所述之晶圓凸塊製程，其中 該些第二開口係呈斜角狀以暴露出該第二球底金屬層。 7. 如申請專利範圍第6項所述之晶圓凸塊製程，其中 該些第二開口係呈朝該些第一開口漸縮的方式以暴露出該 第二球底金屬層。 8. 如申請專利範圍第1項所述之晶圓凸塊製程，其中 形成該第一球底金屬層的方法包括濺鍍。 9. 如申請專利範圍第1項所述之晶圓凸塊製程，其中 形成該第二球底金屬層的方法包括電鍍。 1 0.如申請專利範圍第1項所述之晶圓凸塊製程，其 中該第一球底金屬層係選自於由鉻、鈦、鈦鎢合金、銅、 鎳、鉻銅合金、鎳飢合金、鎳金合金、銘及該等之組合所 組成之組群中的一種材質。 11.如申請專利範圍第1項所述之晶圓凸塊製程，其 中該第二球底金屬層係選自於由鉻、鈦、鈦鎢合金、銅、 鎳、鉻銅合金、鎳釩合金、鎳金合金、鋁及該等之組合所 組成之組群中的一種材質。 1 2.如申請專利範圍第1項所述之晶圓凸塊製程，其 中該焊料包括錫鉛合金。
    10789twf.ptd 第16頁 200419706 六、申請專利範圍 1 3.如申請專利範圍第1項所述之晶圓凸塊製程，其 中該焊料包括金。 1 4.如申請專利範圍第1項所述之晶圓凸塊製程，其 中該焊料包高含鉛材料。
    10789twf.ptd 第17頁
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