200419693200419693
五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於一種靜電吸盤之製造方法，特別係有 關於一種具有複合式介電層之靜電吸盤之製造方法。 【先前技術】V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for manufacturing an electrostatic chuck, and particularly to a method for manufacturing an electrostatic chuck with a composite dielectric layer. [Prior art]
習知靜電吸盤〔electrostatic chuck〕係用以夾甜 固定一工作件，如半導體晶圓或面板等工作件，習知靜電 吸盤之盤本體係主要包含有金屬與陶瓷兩類，當以陶究為 盤本體時尚需要貼附形成電極薄膜，而以金屬為盤本體具 有較佳之成型加工性及具有成本低廉之優點，習知靜電吸 盤之夾钳力係區分為庫倫靜電吸力與運用Johns e η-Rah bek 效應之夾持力，其中運用Johnsen-Rahbek效應之夾持力係 具有夾鉗力強〔large clamping force〕及離夾時間短 〔short de-chucking time〕之優點。 美國專利公告第5, 4 63, 526號係揭示有一種運用 Johnsen-Rahbek效應之複合式靜電吸盤，其盤本體上形成 有一導電層，該導電層上形成有一較厚之半導體介電層， 其電阻值控制在於較低範圍，用以生成johnsen — Rahbek效 應之夾持力，另在該半導體介電層上形成有一較薄之絕緣 層〔insulating layer〕，由於該半導體介電層仍局部地 直接接觸一工作件，當對該靜電吸盤施以高電壓而炎鉗一 工作件時’容易經由該半導體介電層滲漏電流〔leakage of electricity〕至工作件，如半導體晶圓，而損傷晶圓 内晶片。 原申請人於我國專利公告第5〇2368號r靜電吸盤及其The conventional electrostatic chuck is used to clamp and fix a work piece, such as a semiconductor wafer or a panel. The system of the conventional electrostatic chuck mainly includes two types of metals and ceramics. The disk body needs to be attached to form an electrode film. The metal disk body has better molding processability and low cost. The clamping force of the conventional electrostatic chuck is divided into Coulomb electrostatic suction and the use of Johns e η-Rah. The clamping force of the bek effect, among which the clamping force using the Johnsen-Rahbek effect, has the advantages of large clamping force and short de-chucking time. U.S. Patent Publication No. 5, 4 63, 526 discloses a composite electrostatic chuck using the Johnsen-Rahbek effect. A conductive layer is formed on the disk body, and a thick semiconductor dielectric layer is formed on the conductive layer. The resistance value is controlled in a lower range to generate the clamping force of the Johnsen-Rahbek effect, and a thin insulating layer is formed on the semiconductor dielectric layer, because the semiconductor dielectric layer is still partially directly When contacting a work piece, when a high voltage is applied to the electrostatic chuck and the work piece is clamped, it is easy to leak the current through the semiconductor dielectric layer to the work piece, such as a semiconductor wafer, and damage the wafer. Within the chip. The original applicant in China's Patent Bulletin No. 5202368r electrostatic chuck and its
第6頁 200419693 五、發明說明（2) ί 11 製造方法」揭示一種具有複合式介電層之靜電吸盤，其係 以陽極處理方法均勻地在電極板上形成一較薄之第一介電 層’使得第一介電層包含有該電極板之元素，再以電漿喷 焊方式形成一較厚之第二介電層於第一介電層，但尚未能 揭露出如何製造具有Johnsen-Rahbek效應之複合式靜電吸 盤。 【發明内容】 本發明之主要目的係在於提供一種靜電吸盤之製壤方 法，利用金屬蒸汽真空弧（metal vapour vacuum arc, MEVVA )離子植入技術將低阻抗離子植入該第一介電層， 以改變該第一介電層之電容，使得該第一介電層之電阻值 能均勻且可控制地降低至1〇6〜l〇i3 ，以供在靜電吸附 時產生Johnsen-Rahbek效應。 本發明之次一目的係在於提供一種靜電吸盤之製造方 法，利用一高電阻〔>10" Ω -cm〕之第二介電層形成覆蓋 於較低電阻〔1〇6〜1〇ΐ3 Ω-cm〕之第一介電層，使得在靜電 吸附時第一介電層產生John sen-Rahbek效應不會漏電損傷 工作件。/ 本發明之再一目的係在於提供一種靜電吸盤，利用一 高電阻〔>1〇14 Ω-cm〕之第二介電層係覆蓋於較低電阻 〔1〇6〜1013 Ω-cm〕之第一介電層，使得在靜電吸附時第一 介電層所產生Johnsen-Rahbek效應不會漏電損傷工作件。 埤本發明之靜電吸盤之製造方法，首先提供一盤本 _，該盤本體係具有一靜電吸附面及一對應之背面，較佳Page 6 200419693 V. Description of the invention (2) ί 11 Manufacturing method "discloses an electrostatic chuck with a composite dielectric layer, which is an anode treatment method to uniformly form a thin first dielectric layer on the electrode plate 'Make the first dielectric layer contain the elements of the electrode plate, and then form a thicker second dielectric layer on the first dielectric layer by plasma spray welding, but it has not been able to reveal how to manufacture the device with Johnsen- Rahbek effect composite electrostatic chuck. [Summary of the Invention] The main object of the present invention is to provide a method for soil formation of an electrostatic chuck, which uses metal vapour vacuum arc (MEVVA) ion implantation technology to implant low impedance ions into the first dielectric layer. In order to change the capacitance of the first dielectric layer, the resistance value of the first dielectric layer can be uniformly and controllably reduced to 106 ~ 10i3, so as to generate the Johnsen-Rahbek effect during electrostatic adsorption. A secondary object of the present invention is to provide a method for manufacturing an electrostatic chuck, which uses a high-resistance [> 10 " Ω-cm] second dielectric layer to form a low-resistance [106 ~ 1〇ΐ3 Ω] -cm] of the first dielectric layer, so that the John ’s sen-Rahbek effect is generated in the first dielectric layer during electrostatic adsorption, and the work piece is not damaged by the leakage. / Another object of the present invention is to provide an electrostatic chuck, which uses a high-resistance [> 1014 Ω-cm] second dielectric layer to cover a lower resistance [106- 1013 Ω-cm]. The first dielectric layer prevents the Johnsen-Rahbek effect of the first dielectric layer from damaging the work piece due to the leakage during electrostatic adsorption.埤 The manufacturing method of the electrostatic chuck of the present invention, first provides a disc book _, the disc book system has an electrostatic adsorption surface and a corresponding back surface, preferably
MB 第7頁 200419693 五、發明說明（3) 地，該背面係形成有一保護氧化膜；之後，形成一第一介 電層於該盤本體之靜電吸附面，該第一介電層之厚度係介 於10〜2 00 μιη之間；之後，利用金屬蒸汽真空弧（metal vapour vacuum arc，MEVVA)離子植入技術將低阻抗離子 植入該第一介電層，以改變該第一介電層之電容，使得該 第一介電層之電阻值降低至1〇6〜1〇13 Ω-cm，以供在靜電吸 附時產生Johnsen-Rahbek效應，該些低阻抗離子係選自於 Ag、Cu、Fe、Al、Zn、Cr、Ti，C 等離子；形成一第二介 電層於該第一介電層上並覆蓋該第一介電層，該第二介電 層係具有大於第一介電層之電阻值〔>1014 Ω -cm〕，並以 電漿喷焊或化學氣相沉積技術全面覆蓋於該第一介電層， 第二介電層之厚度係介於5 0〜5 0 0 //m之間，當以該靜電吸 附面靜電吸附一工作件時，由第一介電唐所產生 Johnsen-Rahbek效應而累積於第一介電層30與第二介電層 4 0間界面的電荷無法通過第二介電層，達到防止對工作件 之漏電而減少損傷工作件。 【實施方式】 參閱所附圖式，本發明將列舉以下之實施例說明。 請參閱第1圖’依本發明之一具體實施例所例奉之靜 電吸盤之製造方法係主要包含有「提供一盤本體」u、 「形成第一介電層於該盤本體」12、「利用離子植入技二 將低阻抗離子植入該第一介電層，以改變該第一介電層濟 電容」13及「形成第二介電層於該第一介電層」14等步之MB Page 7 200419693 V. Description of the invention (3) The back surface is formed with a protective oxide film; after that, a first dielectric layer is formed on the electrostatic adsorption surface of the disk body, and the thickness of the first dielectric layer is Between 10 and 2 00 μιη; after that, low-impedance ions are implanted into the first dielectric layer using metal vapour vacuum arc (MEVVA) ion implantation technology to change the first dielectric layer The capacitance of the first dielectric layer reduces the resistance value of the first dielectric layer to 106 ~ 103 Ω-cm, so as to generate the Johnsen-Rahbek effect during electrostatic adsorption. The low-resistance ions are selected from Ag, Cu , Fe, Al, Zn, Cr, Ti, C, etc .; forming a second dielectric layer on the first dielectric layer and covering the first dielectric layer, the second dielectric layer is larger than the first dielectric layer The resistance value of the electrical layer [> 1014 Ω-cm], and the first dielectric layer is completely covered by plasma spray welding or chemical vapor deposition technology, and the thickness of the second dielectric layer is between 50 and 5 Between 0 0 // m, when a work piece is electrostatically adsorbed by the electrostatic adsorption surface, Johnsen- The charge accumulated at the interface between the first dielectric layer 30 and the second dielectric layer 40 through the Rahbek effect cannot pass through the second dielectric layer to prevent leakage to the work piece and reduce damage to the work piece. [Embodiment] With reference to the drawings, the present invention will be described by the following embodiments. Please refer to FIG. 1 'The manufacturing method of the electrostatic chuck according to one embodiment of the present invention mainly includes "providing a disk body" u, "forming a first dielectric layer on the disk body" 12, "Using Ion implantation technique 2 implants low-impedance ions into the first dielectric layer to change the capacitance of the first dielectric layer "13 and" forms a second dielectric layer on the first dielectric layer "14 steps
200419693 五、發明說明（4) 於「提供一盤本體」11步驟中，請參閱第2^圖、所提 供之盤本體20係由鋁、鋁合金或其它金屬製成，其係具有 一靜電吸附面21及一對應之背面2 2，該靜電吸附面21係用 以靜電吸附一工作件〔workpiece〕，如半導體晶圓、矽 板或玻璃基板，該盤本體20係具有複數個貫通該靜電吸附 面21與該背面22之通孔23，以供頂托針〔^二，= 而托起工作件〔圖未繪出〕，較佳地，在「形成第一介電 層於該盤本邀」1 2步驟之前，對該盤本體2 〇施以陽極處 理，以在該盤本體20之背面22形成保護性氧化膜24，如氧 化紹薄膜〔aluminum oxide film〕，其厚度約在1〇〜2 00 ❶ //m ’以保護該盤本體20之背面22，防止漏電，並且可鄰 接該第一介電層30，以增強該第一介電層3〇於該盤本體2〇 之結合。該盤本體20係作為靜電吸盤之電極及主體結構， 於本實施例中，該盤本體20係為三極電極〔tri-p〇iar electrode〕，依設計不同，亦可為單極電極 〔mono-polar electrode〕或雙極電極〔bi-polar electrode 〕 〇 於「形成第一介電層於該盤本體」步驟12中，請參閱 第2B圖，運用電漿喷焊〔pi asma spray ing〕‘或陽極處理 技術在該盤求體20之靜電吸附面21形成一緻密而高電阻之处 第一介電層30，如氧化鋁，該第一介電層3〇之厚度係介於 10〜20 0 /zm之間並覆蓋於該盤本體2〇之靜電吸附面21。 利用離子植入技術將低阻抗離子植入該第一介電 層，以改變該第一介電層之電容」步驟13，首先請參閱第200419693 V. Description of the invention (4) In step 11 of "Providing a plate body", please refer to Figure 2 ^. The provided plate body 20 is made of aluminum, aluminum alloy or other metal, which has an electrostatic adsorption. The surface 21 and a corresponding back surface 22 are used for electrostatically adsorbing a workpiece, such as a semiconductor wafer, a silicon plate, or a glass substrate. The disk body 20 has a plurality of penetrating electrostatic absorptions. The through hole 23 of the surface 21 and the back surface 22 is used for a jacking pin [^ 二, = and a work piece is lifted [not shown in the drawing]. Preferably, the first dielectric layer is formed on the disk. ”Before step 12, the disk body 20 is anodized to form a protective oxide film 24 on the back surface 22 of the disk body 20, such as an aluminum oxide film, with a thickness of about 10 to 2 00 ❶ // m 'to protect the back surface 22 of the disk body 20 to prevent leakage, and may be adjacent to the first dielectric layer 30 to enhance the combination of the first dielectric layer 30 and the disk body 20. The disk body 20 is used as the electrode and main structure of the electrostatic chuck. In this embodiment, the disk body 20 is a tri-pole electrode, which may also be a monopolar electrode (mono -polar electrode] or bi-polar electrode 〇 In step 12 of "forming the first dielectric layer on the disk body", please refer to Fig. 2B, using plasma spray welding [pi asma spray ing] ' Or anodizing technology to form a dense and high-resistance first dielectric layer 30, such as alumina, on the electrostatic adsorption surface 21 of the disk body 20, and the thickness of the first dielectric layer 30 is between 10 and 20 Between 0 / zm and covering the electrostatic adsorption surface 21 of the disk body 20. Use ion implantation technology to implant low-impedance ions into the first dielectric layer to change the capacitance of the first dielectric layer. "Step 13
第9頁 200419693 五、發明說明（5) 3圖，該已形成有第一介電層30之盤本體20係置放於一離 子植入設備60内，該第一介電層3〇係朝向該離子植入設備 60之處理面，利用金屬蒸汽真空弧（metal vapour vacuum arc，MEVVA)離子植入技術將低阻抗元素，如Ag 〔銀〕、Cu〔銅〕、Fe〔鐵〕、A1〔鋁〕、Zn〔鋅〕、Cr 〔鉻〕、T i〔鈦〕、c〔碳〕等原子或原子團，在陽極 61、陰極62、磁鐵6 3及觸發電極64等離子源之真空弧發電 作用下，於真•空處理腔内生成低阻抗離子31，並加速為離 子束，利用引出電極65、抑制栅電極66與接地電極67約束 並控制該包含有該些低阻抗離子31之離子束，使其衝擊而 植入該第一介電層30内，藉以改變該第一介電層3〇之電 容，由於該些低阻抗離子31〔於植入後亦可視為.低阻抗元 素32〕之植入操作，使得該第一介電層3〇滲有適當之低阻 抗兀素32〔請參閱第2C圖〕，該第一介電層3〇在離子植入 步驟1 3之後其電阻值係能可控制地降低至1 〇δ〜1 〇ia 〇 ， 以供在靜電吸附一工作件時產生J〇hnsen-Rahbek效應，較 佳地，該些低阻抗離子3丨之植入量約為該第一介電層3 〇之 0· 1〜10wt%〔重量百分比〕。 於「形成第二介，電層於該第一介電層」14中，請參閱 第2D圖’利用·電聚噴焊或化學氣相沉積〔Chemi cal Vap〇r Deposi t ion，CVD〕技術在該第一介電層3〇之顯露表面形 成一第一介電層4〇，以全面覆蓋該第一介電層3〇，該第二 介電層40之電阻值〔大於1〇η Ω—cm〕係大於該第一介電 層30之電阻值，該第二介電層4〇係選自於4丨2〇3〔氧化Page 9 200419693 V. Description of the invention (5) 3, the disk body 20 having the first dielectric layer 30 formed therein is placed in an ion implantation device 60, and the first dielectric layer 30 is oriented The processing surface of the ion implantation device 60 uses metal vapour vacuum arc (MEVVA) ion implantation technology to reduce low-resistance elements such as Ag [silver], Cu [copper], Fe [iron], A1 [ Aluminum], Zn [zinc], Cr [chrome], Ti [titanium], c [carbon] and other atoms or atomic groups, under the action of vacuum arc power generation of the ion source such as anode 61, cathode 62, magnet 63, and trigger electrode 64 Low-impedance ions 31 are generated in the true-air processing chamber and accelerated into an ion beam. The extraction electrode 65, the suppression gate electrode 66, and the ground electrode 67 are used to constrain and control the ion beam containing the low-impedance ions 31 so The impact is implanted into the first dielectric layer 30 to change the capacitance of the first dielectric layer 30. Due to the implantation of the low-resistance ions 31 (which can also be considered as low-resistance elements 32 after implantation) In this operation, the first dielectric layer 30 is infiltrated with a suitable low-impedance element 32 [see (See FIG. 2C). After the first dielectric layer 30 has an ion implantation step 13, its resistance value can be controllably reduced to 1 〇δ ~ 1 〇ia 〇 for the electrostatic adsorption of a work piece The Johnsen-Rahbek effect is generated. Preferably, the implanted amount of the low-resistance ions 3 丨 is about 0.1 to 10 wt% [weight percentage] of the first dielectric layer 30. In "Forming a Second Dielectric, and a Dielectric Layer on the First Dielectric Layer" 14, please refer to the 2D drawing "Using · Electrospray Welding or Chemical Vapor Deposition (CVD) Technology" A first dielectric layer 40 is formed on the exposed surface of the first dielectric layer 30 to completely cover the first dielectric layer 30, and the resistance value of the second dielectric layer 40 is greater than 10 Ω —Cm] is greater than the resistance value of the first dielectric layer 30, and the second dielectric layer 40 is selected from 4 丨 203 [oxidation
第10頁 200419693 五、發明說明（6) ·. 鋁〕、A1N〔氣北鋁〕、BN〔氮化硼〕、Si3N4〔氣化石夕;.〕 及BeO〔氧化鈹〕等高電阻材料，較佳地，該第二介電層 40之厚度係50〜500 //m。 請參閱第4及5圖，依上述製造方法製得之靜電吸盤係 可連接一電源供應器50，對該盤本體2〇提供一高電壓，由 於該第一介電層30之電阻值降低至1〇6〜1〇13 Q_cm ,能誘生 出擴增之電容’即在該第一介電層3〇快速生成大量移動之 正負電荷，產生了Johnsen - Rahbek效應，增強對在靜電吸 附面21上之工作件7〇〔如半導體晶圓〕之夾鉗力 〔clamping f0rce〕，同時該工作件7〇脫離該靜電吸盤之 離夾時間〔de-chucking time〕可控制在兩秒之内。更重 要的疋，利用該尚電阻之第二介電層4〇覆蓋該第一介電層 使得累積於第一介電層30與第二介電層40間界面的電 ί Ϊ、f"通過第二介電層40，達到防止對工作件70之漏電而 減 >、損傷該工作件70，如半導體晶圓内晶片。 ，本發明之靜電吸盤之製造方法並不局限金屬材 之锄太妙=20 ’含有電極板之非導電材質〔如陶瓷〕製成 爻盤本體亦可運用於本發明之製造方法。 本^明之保護範圍當視後附之申請專利範圍所界定者 所：何熟知此項技藝者，在不脫離本發明之精神和範· t之任何變化與修改，均屬於本發明之保護範圍。 200419693 圚式簡單說明 第1 圖··依據本發明之靜電吸盤之製遠流程圖； 第2A至2D圖：依據本發明之靜電吸盤之製造方法，所提供 之盤本體在流程步驟中之截面示意圖； 第 3 圖·依據本發明之靜電吸盤之製造方法，該盤本 體在離子植入設備中之截面米意圖； 第 4 圖：依據本發明之靜電吸盤之製造方法，該靜電 吸盤吸附有一晶圓之截面示意圖；及 第 5 圖：依據本發明之靜電吸盤之製造方法，該靜電 吸盤吸附有一晶圓之部份截面示意圖。 元件符 號 簡 單 說 明 • 11 提 供 盤 本 體 12 形 成 第 介 電 層於 該盤本體 13 利 用 離 子 植 入 技術 將低阻抗離子植入該第 一介電層， 以 改 變 該 第 介電 層之電容 14 形 成 第 二 介 電 層於 該第一介電層 20 盤 本 體 21 靜電吸附面 22 背 面 23 通 孔 24 氧化膜 30 第 _義 介 電 層 31 低阻抗離子 32 元 素 40 第 二 介 電 層 50 電源供應器 60 離 子植入設備 61 陽 極 62 陰極 63 磁 鐵 64 觸 發 電 極 65 引出電極 66 抑 制栅電極 67 接 地 電 極 70 工作件Page 10, 200419693 V. Description of the invention (6) · Aluminum], A1N [Gabei Aluminum], BN [Boron Nitride], Si3N4 [Gasified Fossil ;;] and BeO [Beryllium Oxide], etc. Preferably, the thickness of the second dielectric layer 40 is 50˜500 // m. Please refer to FIGS. 4 and 5. The electrostatic chuck prepared according to the above manufacturing method can be connected to a power supply 50 to provide a high voltage to the disk body 20. Since the resistance value of the first dielectric layer 30 is reduced to 10-6 ~ 13 Q_cm, which can induce an amplified capacitor, that is, a large number of moving positive and negative charges are rapidly generated in the first dielectric layer 30, resulting in the Johnsen-Rahbek effect, which enhances the pair on the electrostatic adsorption surface 21 The clamping force [clamping f0rce] of the work piece 70 (such as a semiconductor wafer), and the de-chucking time of the work piece 70 from the electrostatic chuck can be controlled within two seconds. More importantly, the first dielectric layer is covered with the second dielectric layer 40 which is still resistive so that the electric charges accumulated at the interface between the first dielectric layer 30 and the second dielectric layer 40 pass through. The second dielectric layer 40 prevents the leakage of the work piece 70 and reduces the damage to the work piece 70, such as a wafer in a semiconductor wafer. The manufacturing method of the electrostatic chuck of the present invention is not limited to the metal material. It is too wonderful = 20 ′ The non-conductive material (such as ceramics) containing the electrode plate is made of the chuck body, which can also be used in the manufacturing method of the present invention. The scope of protection of this specification should be defined by the scope of the appended patent application: Any person skilled in the art, without departing from the spirit and scope of the present invention, any changes and modifications are within the scope of protection of the present invention. 200419693 Simple description of the pattern Figure 1 · Flow chart of the manufacturing process of the electrostatic chuck according to the present invention; Figures 2A to 2D: Schematic sectional view of the disk body provided in the process steps according to the manufacturing method of the electrostatic chuck according to the present invention Figure 3 · The manufacturing method of the electrostatic chuck according to the present invention, the cross section of the disk body in the ion implantation device; Figure 4: The manufacturing method of the electrostatic chuck according to the present invention, the electrostatic chuck adsorbs a wafer And FIG. 5 is a schematic cross-sectional view of a portion of a wafer adsorbed by the electrostatic chuck according to the manufacturing method of the electrostatic chuck of the present invention. Brief description of component symbols • 11 Provide a disk body 12 to form a first dielectric layer on the disk body 13 Use low-impedance ions to implant the first dielectric layer using ion implantation technology to change the capacitance of the first dielectric layer 14 to form a first Two dielectric layers on the first dielectric layer 20 disk body 21 electrostatic adsorption surface 22 back surface 23 through hole 24 oxide film 30 first sense dielectric layer 31 low impedance ion 32 element 40 second dielectric layer 50 power supply 60 Ion implantation equipment 61 Anode 62 Cathode 63 Magnet 64 Trigger electrode 65 Lead-out electrode 66 Suppress grid electrode 67 Ground electrode 70 Work piece