200419313 玖、發明說明： 【發明所屬之技術領域】 本發明關於一種微影投影裝置，其包含： -一照射系統，其用來供應一投影輕射束； -一支撐結構，其用來支撐圖案形成構件，該圖案形成構 件用來使該投影束依據一所需圖案來形成圖案； -一基板檯，其用來支承一基板； -一投影系統，其用以將該圖案光束投射在該基板之一目 標部分上， -一感應為，其用以偵測由未圖案化投影束及圖案化投影 束之其中之一所橫越過之裝置之一元件上之區域的至少一 邵位所照射之冷光輻射， -用以自所偵測到之冷光輻射來測定在該部位中未圖案 化投影束及圖案化投影束之其中之一之強度的構件。 【先前技術】 ”本說明書所述“圖案形成構件（patierning means)”應廣義 解釋為意指能用來使-人射輕射束具備—符合_欲產生於 —基板目標部分内之圖案之有圖案橫剖面的構件；就此而 ^可使用“光閥（light valve)，，—辭。整體而言，該圖案會 符合欲在該目標部分產生之_裝置之―特定功能層，例如 —積體電路或其他裝置（參見下文）。此等圖案形成構件的實 • 心心可Ί W八"丨烈知，且並 含如二元型、交替相移型、和衰減相移型光罩，以及各 87659 200419313 混合型光罩。將此一光罩置入輻射束内導致照到該光罩上 之輻射依據該光罩上的圖案選擇性透射（該光罩為一透射型 光罩的情況）或反射（孩光罩為一反射型光罩的情況卜在具 有一光罩的情況中，支撐結構大致會是一光罩檯，此結構 確保能將光罩保持在入射輻射束内一期望位置，且其得視 需要相對於光束移動。 -一可程式化反射鏡陣列。此一裝置之一實例為一具有一 黏彈性控制層和一反射層之可矩陣定址表面。此一裝置背 後的基本原理（舉例來說）是該反射表面之已定址區將入射光 反射成繞射光，而未定址區將入射光反射成未繞射光。利用 一適當濾光片，能將該未繞射光濾離反射光束，僅留下繞射 光；依此方式，光束依據該可矩陣定址表面之定址圖案變得 圖案化。一可程式化反射鏡陣列之一替代實施例可運用一小 型反射鏡矩陣排列，每一小型反射鏡得藉由施予一適當局部 電場或藉由使用壓電致動構件的方式使其個別繞一軸線傾 斜。再次地，這些反射鏡是可矩陣定址的，使得已定址反射 鏡會以一不同於未定址反射鏡的方向反射一入射輻射束；依 此方式，反射光束依據該等可矩陣定址反射鏡之定址圖案變 得圖案化。所需矩陣定址作業得利用適當電子構件進行。在 以上所述兩種情況中，圖案形成構件得包含一或多個可程式 化反射鏡陣列。有關此處所述反射鏡陣列之更多資气兴例來 說能從美國專利第5,296,89 1號和5,523，193號及PCT專利申 請案WO 98/38597號和WO 98/33096號中得知，該等專利案 以引用的方式併入本文中。在一可程式化反射鏡陣列的情= 87659 200419313 中，該支撐結構舉例來說可為實施成_框架或一檯面，其 可視需要是固定的或可動的。 -一可程式化LCD陣列。此構造之一實例見於美國專利第 5,229,872號，該案以引用的方式併入本文中。如上所述， 此情況中之支撐結構舉例來說可為實施成一框架或一檯面 ，其可視需要是固定的或可動的。 為求簡化，本說明書其他部分可能在某些地方明顯指向 涉及一光罩和光罩檯之實例；然而在此等案例中論述的通 用原則應著眼於如以上所述圖案形成構件的較廣泛意涵。 械影投景〉裝置舉例來說能用在積體電路（ICs)之製造中。 在此種案例中，圖案形成構件可產生一相當於積體電路一 獨立層之電路圖案，且能將此圖案映照在基板（矽晶圓）上已 塗佈一層輻射敏感材料（抗蝕劑）之一目標部分（例如包括一 或多個晶粒）上。一般而言，一單一晶圓會含有一次一個接 續地經投影线輻照之相鄰目標部分的—完整網絡。在當 7衣置中，犯以運用一光罩檯上一光罩形成圖案的方式在 兩類不同機器之間做出區隔。在一類微影裝置中，每一目 抓部分猎由在單次行程中將整個光罩圖案曝照在目標部分 勺方式又輪照’此一裝置通常稱為晶圓步進器（wafer ’Μ0。在另—類—般稱為步進掃描（step-and-scan)裝置之 裝置中每一目標邯分是藉由在投射光束下以一給定參考 万向（知描方向）逐漸掃過光罩圖案同時同步以平行或平行 向万、4方向的方向掃動基板的方式受輻照；因為一般而 石，投影系統會有一放大因子M(通常M<1)，基板檯之掃動 87659 200419313 :度二是光罩檯掃描速度之Μ倍。更多關於此處所述微影 之貝為舉例來說能自美國專利第6,046,792號中得知， 該案以引用的方式併入本文中。 于、口， "在使用—微影裝置之製造程序中，將一圖案（例如是一 :罩：圖旬映照在一至少局部受一層帛射敏感材料(抗蝕 劑）覆蓋的基板上°在此映照步驟之前，該基板可能經過各 種處理’例如上底漆（pHming)、塗佈抗㈣和—軟性烘烤作 業。基板在曝光後可能經過其他處理，例如曝光後烘烤 )…、像硬性烘烤及成像後圖案測量/檢驗。此系列處 、之私係作為對一裝置（如積體電路）之一獨立層形成圖案 之基礎 '然後此等有圖案層可能經過各種處理，例如蝕刻 、離=植入（摻雜）、金屬化處理、氧化處理、化學機械研磨 處理等，所有程序均要將—獨立層磨掉。若要求有數層， 則必須將整個程序或其變異對每—新層重複。最後會：基 板（晶’上出現—系列元件。然後以切粒或分錄方式使該等 疋件各自分開’個別儀11自此可安裝職ff上或連接之插 HUl^^,Av5l^^^，Micr〇chip Fabricat.〇n； a pract.cai GU1de to Semic〇nduct〇r Pr〇cessing，，一 書作者為 p咖廳200419313 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a lithographic projection device comprising:-an illumination system for supplying a projected light beam;-a support structure for supporting a pattern Forming means for forming the projection beam into a pattern according to a desired pattern;-a substrate stage for supporting a substrate;-a projection system for projecting the pattern beam on the substrate On one of the target parts, a sensor is used to detect at least one shaw position of an area on an element of the device traversed by one of the unpatterned projection beam and the patterned projection beam. Cold light radiation, a means for measuring the intensity of one of an unpatterned projection beam and a patterned projection beam in the part from the detected cold light radiation. [Prior art] "Pattering means" described in this specification should be broadly interpreted as meaning that it can be used to make-human light beams have-conform to _ want to be produced-the pattern in the target portion of the substrate A member of the cross section of the pattern; for this purpose, "light valve" can be used. In general, the pattern will correspond to the specific functional layer of the device to be produced in the target part, such as an integrated circuit or other device (see below). The solidity of these pattern-forming members is well known, and includes, for example, binary, alternating phase shift, and attenuation phase shift masks, as well as 87659 200419313 hybrid masks. Placing this photomask into a radiation beam causes the radiation hitting the photomask to be selectively transmitted according to the pattern on the photomask (the photomask is a transmissive photomask) or reflected (the photomask is a In the case of a reflective mask, in the case of having a mask, the supporting structure will be a mask stage, which ensures that the mask can be maintained in a desired position within the incident radiation beam, and it is necessary to Beam movement.-A programmable mirror array. An example of this device is a matrix addressable surface with a viscoelastic control layer and a reflective layer. The basic principle behind this device (for example) is that The addressed area of the reflective surface reflects incident light as diffracted light, while the unaddressed area reflects incident light as undiffracted light. With an appropriate filter, the undiffracted light can be filtered away from the reflected beam, leaving only the diffracted light In this way, the beam becomes patterned according to the addressing pattern of the matrix-addressable surface. An alternative embodiment of a programmable mirror array may use a matrix of small mirror arrays, each small mirror obtained By applying an appropriate local electric field or by using a piezoelectrically actuated member, they are individually tilted about an axis. Again, these mirrors are matrix addressable, so that the addressed mirrors will be different from the unaddressed ones The direction of the mirror reflects an incident radiation beam; in this way, the reflected beam becomes patterned in accordance with the addressing patterns of the matrix-addressable mirrors. The required matrix addressing operation must be performed using appropriate electronic components. In this case, the pattern-forming member may include one or more programmable mirror arrays. Further examples of mirror arrays described herein can be found in US Patent Nos. 5,296,89 1 and 5,523,193 And PCT patent applications WO 98/38597 and WO 98/33096, which are incorporated herein by reference. In the case of a programmable mirror array = 87659 200419313, the The support structure can be implemented as a frame or a table, for example, which can be fixed or movable as required.-A programmable LCD array. An example of this structure is found in US Patent No. 5,229,872 The case is incorporated herein by reference. As mentioned above, the supporting structure in this case can be implemented as a frame or a table, for example, which can be fixed or movable as needed. For simplicity, this description Other parts may clearly point to examples involving a reticle and reticle in some places; however, the general principles discussed in these cases should focus on the broader implications of pattern-forming members as described above. The device can be used, for example, in the manufacture of integrated circuits (ICs). In this case, the pattern-forming member can generate a circuit pattern equivalent to a separate layer of the integrated circuit, and this pattern can be reflected on a substrate ( Silicon wafer) has been coated with a layer of radiation-sensitive material (resist) on a target portion (for example, including one or more dies). In general, a single wafer will contain projection lines one after the other A complete network of irradiated adjacent target parts. In Dang 7 clothes, the criminal used a mask on the mask table to form a pattern to distinguish between two different types of machines. In a type of lithography device, each eye catching part is shot by exposing the entire photomask pattern to the target part in a single stroke and then rotating. This device is often called a wafer stepper (wafer 'M0). In another type of device, generally called a step-and-scan device, each target is swept through the light by a given reference universal (knowing direction) under the projected beam. The mask pattern is simultaneously irradiated by sweeping the substrate in a parallel or parallel direction in the directions of 10,000 and 4; because of the general stone, the projection system will have a magnification factor M (usually M < 1), the sweep of the substrate table 87659 200419313 The second degree is M times the scanning speed of the photomask table. More about the lithography shell described herein can be known, for example, from US Patent No. 6,046,792, which is incorporated herein by reference. Yu, Kou, " In the manufacturing process of the use-lithography device, a pattern (for example, a: mask: figure) is reflected on a substrate at least partially covered by a layer of radiation sensitive material (resist). Before this mapping step, the substrate may undergo various Treatments, such as primer (pHming), anti-rust coating and -soft baking operations. The substrate may be subjected to other treatments after exposure, such as post-exposure baking), like hard baking and pattern measurement / inspection after imaging. The private parts of this series serve as the basis for patterning an independent layer of a device (such as an integrated circuit). Then these patterned layers may undergo various processes, such as etching, ion implantation (doping), metal All processes, such as chemical treatment, oxidation treatment, chemical mechanical polishing, etc., need to be ground away. If several layers are required, the entire process or its variation must be repeated for each new layer. Finally, the substrate (crystal) Appear on the series of components. Then separate these pieces by cutting or recording. Individual devices 11 can be installed on or connected to HUl ^^, Av5l ^^^, Micr0 chip Fabricat. 〇n; a pract.cai GU1de to Semic〇nduct〇r Pr〇cessing, a book author is p cafe
Zant ’ 1997年第三版，ISBN 〇_〇7_〇6725()_4。 為求間化，投影系統在下文中可簡稱為“透鏡（iens)” ；但 該辭應廣義解釋為包含各類投影系統，例如包括折射光學 件:反射光學件以及折射反㈣統等。純㈣統亦可包 括依據指向、造型、或控制輻射投影束等任一設計類型運 87659 200419313 作之組件或光學元件，且此等組件在下文 獨稱為“透鏡（lens)，，。此外，今 木岐或早 基板檯(及/或兩或多個光罩：二 4，、有兩或多個 u尤卓耠）爻類型。在此種“多平二，，牡罢 中：：外：檯可並聯使用，或者可在-或多個接進； 之同3.在或多個其他檯上進行準備步驟 置舉例來說見於美國專利m ς Q/；n 十。诚於裝 吴国專利弟5,969,441號和國際專 酬咖號，該等專利案以引用的方式併專❹〇 =阻劑可接收到正確的曝照劑量，趣期間 在基板平面上之輻射束的強度係很重要的。不幸地， 在未改變強度或改變強度分佈（均勻度）的情況下，於曝昭期 間之強度測量在執行上極A困難。因m知的微影裝 置中，通常使用感應器的組合來減少擾動—一第一感應器 遇吊一附接至基板檯，使其可以定位在光束中以在曝光之間 進行測量，且n應器係位在光學路彳i中之適當位置 一例如’女裝在一反射器之一部分上，以在曝照期間測量 “束之 #彳乂的強度。利用曝照之間的第一感應器，可以 迻行光束強度及光束強度分佈性的極精確測量，且該裝置 《特性可以藉由在不同條件下由不同感應器所測量之相對 、來力刀析。然後可利用此資料而僅利用該第二感應 扣之^里值來預測在基板平面上的強度。此方式之缺點在 ' 由元弟一感應器的存在’在強度上總會存在有擾動。 或者’在裝置中之其中一反射器可部分鍍銀，以使入射 輕射 < 一部分可以通過該反射器而到達一位在該反射器後 面的感應器，或者可以將光束之一部分重新導向至一感應 87659 200419313 器。此一配置基本會降低投影束之強度，而這將導致裝置 的產率。利用EUV輻射之裝置對於此問題尤其敏感，因為 EUV反射器在特性上係極不具效率。用於EUV輻射之高反射 性面鏡目前尚未問市。再者，在採用EUV輻射之微影投影裝 置中，投影束係在一抽真空系統中照射，以防止強度損失 。因此，該光束強度感應器亦必須定位在該抽真空系統中 ，因此其必須設計成相容於真空環境，且當放置在真空中 時不會排氣。 【發明内容】 本發明之一目的係要提供一種用以測定投影束之強度的 構件，其可以測定光束通過其截面積之強度且可以與Ευν 裝置相容使用。_ 此目的及其他目的可以依照在前序段落中所詳述之微影 裝置來達成，其特徵為： -該感應器自該受到未圖化投影束及圖案化投影束之其 中技於束所入射之元件之區域的複數部位來偵測該 冷光輻射；且 該用以測定該光束強度之構件係測定在每—該部位中 之未圖案化投影束及圖案化投影束其中之一投影束的 強度。 在其中一未圖化投影束及圖案化投影束之其中—者之該 部位上強度可以由所偵測到之冷光輻射所測定。冷光係： -熱激發物質所產生之自發性發射。數種不同麵型之二 及眾所周…可根據產生熱激發狀態之機構所辨識：例 如’先致冷先(由吸收光子所產生之激發狀態）、輻射冷光 87659 -10 - 200419313 (藉由高能粒子或輕射所激私> 对π激1足冷光）、聲納冷光（藉由聲波 所激發之冷光)、摩擦冷光(藉由將特定固體一起摩擦所產生 《冷光)、及化學冷光(藉由一化學反應所產生之冷光)。此外 ’冷光亦可以由激發及發射之間的關係所辨識，例如螢光 (僅在-物質之激發期間所發生之發修磷光（在—物質之 激發之後所產生或持續之發光）。 楮由投影束之入射而由裝置之元件所產生的冷光程度（推 測由入射之輕射束造成在表面中之原子的轉變所造幻係可 以藉=個因數來加以測定，包括入射能量束之特性(例如 光子ilb里及波長）及元件之特性（例如所使用之材料）。 由万、/T光I射之分佈通常為隨意的’因此該感應器並不 需要位在Μ路徑上。因此，韓射束將不會因感應器的存 在而被改變。如此，内處W Μ ^ ^ 、 ^ 感應咨便可用以偵測在輻射束在光束 (整個截面上的強度及測定強度之分体以及光束之整體強 度。 如偵測出冷光輕射之元件可以為—構成分佈型布雷格反射 态或知掠入射式聚光器之多層堆疊體。詳言之，該元件可 以為投影系統之分及/或照射系統之部分及/或可使未 圖化投〜束入射於其上之第一反射器。該元件尤其可以為 照射器之部分。 、尤、應為可以在一寬廣的光譜上偵測出冷光輻射之組合強 '或者為了更精確測定該輻射束之強度，感應器可以 偵剠個或多個對應於欲發出之輻射之預期波長（由於輻射 束而使反射咨中之原子狀態改變所造成）之窄波帶的冷光輻 87659 200419313 射之強度。 由於投影束為EUV輻射，因此該圖案形成構件、投影系統 基板及知、射系統之至少一部分係包含在一真空腔室中， 以減失光束強度由於ElJV輻射之吸收所造成之損失。然而， 、々光4¾射可说處在不同的波長，例如，在可見光範圍 内，其不會像EUV—般被吸收至某一程度。因此，在一較佳 實施例中，該感應器可以定位在真空腔室外面。如此，感 應器並不需要具有真空相容性。 可I皆以偵測出冷光輻射之測得的未圖化投影束或圖案化 才又影束 < 邵位的強度’可用以調整基板目標部分的曝照時 門 由…、射系統所產生之輕射束強度或調整投影束之強度 分佈。 依照本發明之另一態樣係提供一種元件製造方法，其包 含以下之步驟： -提供一基板，該基板至少部分地由一輻射敏感材料層 所覆蓋； -利用一照射系統來提供一輻射投影光束； -利用圖案形成構件來使該投影光束在其截面上具有一 圖案； -將琢具有圖案之輻射光束投影在該輻射敏感材料層之 一目標部分上， -利用一感應器來偵測由未圖案化投影束及圖案化投影 束之其中之一所橫越過之裝置之一元件上之區域的至 少一部位所照射之冷光輻射， 87659 -12 - 200419313 -用以自所偵測到之冷光輻射來測定在該部位中未圖案 化投-影束及圖案化投影束之其中之一之強度， 其特徵為： -利用該感應器自該受到未圖化投影束及圖案化投影束 之其中一投影束所入射之元件之區域的複數部位來偵 測該冷光輻射 -測定在每一該部位中之未圖案化投影束及圖案化投影 束其中之一投影束的強度。 儘管在本說明書中可能特別就依據本發明裝置在積體電 路製造當中之使用作參考，應明白瞭解到此一裝置有著許多 其他可行應用。舉例來說，其可用於積體光學系統、磁區記 fe體之導引和偵測圖業、液晶顯示面板、薄膜式磁頭等的製 造。熟習此技藝者會理解到本說明書在有關此等可能應用的 剛述中對主光罩（rectile)”、“晶圓（wafer)’’或“晶粒（die)，，等辭 的使用當分別視為以更一般性的用語‘‘光罩（masl〈)，，、“基板 (substrate)’’和“目標邵分（target p0rti〇n)，，取代。 在本說明書中，以“輕射（radiation)”和“光束加㈣），，用辭 涵蓋所有類型的電磁輻射，包括紫外線輻射（例如波長為365 、248、193、157或126毫微米的輻射）和遠紫外線（EUV)輻 射（例如波長在5-20毫微米内，以及粒子束，例如離子束或 電子束。 本發明之實施例將在下文中參考隨附之圖式來加以說明。 【實施方式】 贵施例1 87659 200419313 圖1簡略繪出一依據本發明之一特定實施例的微影投影 裝置。該裝置包含： -一照射系統Ex，IL，其用來供應一投影輻射束PB(例 如EUV輻射），在本特定例中其亦包括一輻射源la ; -一第一物件檯（光罩檯）MT，其具備一用來支承一光罩 MA(例如一王光罩）之光罩支架，且連接至用來使該光罩相 對於單元PL精確定位的第一定位構件pM ; -一第二物件檯（基板檯）WT，其具備一用來支承一基板 (例如’至佈抗姓劑之石夕晶圓）之基板支架，且連接至用來 使該基板相對於單元PL精確定位的第二定位構件pw ; 才又於系統（“透鏡”）PL(例如一面鏡群組），其用來將 二光罩Μ A之一無照邵分映照在該基板w之一目標部分^ (例 如包括一或多個晶粒）上。 此處所述裝置為一反射型裝置（例如有一反射型光罩）。然 整體而言，舉例來說其亦可為一透射型裝置（具備一透射型 光罩）。或者，該裝置可使用其他類型的圖案形成構件，例 如前文提及之一可程式化反射鏡陣列類型。 光源LA(例如一雷射發生源或放電電漿源）產生一輻射束 此光束直接地或在已橫越調節構件（例如一光束擴展器Εχ) 之後送到一照明系統（照明器）IL内。照明器IL可包括用來設 足光束内強度分佈之外邵及/或内部徑向範圍（通常分別稱 為外σ和内σ)的調整構件AM。此外，其通常包括多樣其他 組件，例如一積分器川和一聚光器c〇。依此方式，照射到 光罩ΜA上之光束pb於其橫剖面有一所需的均勻性和強度 87659 -14 - 200419313 分佈。 就圖1來說，應注意到光源LA可為在微影投影裝置之殼體 内（舉例來說，如常見情況之光源L A為一水銀燈的例子）， 然其亦可為遠離於微影裝置，其所產生的輕射束是經導引 至裝置内（例如藉助於適當的指向反射鏡）；後種情況通常是 在光源L A為一激光雷射的情況。本發明及申請專利範圍涵 蓋這兩種架構。 光束PB隨後與光罩MA交會，該光罩支承在一光罩檯Μτ 上。光束PB經光罩ΜΑ選擇性反射後通過投影系統pL，該投 影系統將光束PB聚焦在基板w之目標部分c上。藉由第二定 位構件（及干涉測量構件IF)之協助，基板檯WT得以精確移 動，例如藉此將不同目標部分c定位於光束四之路徑内。同 樣地，第一足位構件例如能在光罩MA自一光罩庫機械性回 收後或在一次掃描期間將光罩MA相對於光束叩之路徑精 確足位。整體來說，物件檯_口资之移動能以—長行程模 、，且（粗疋位）和一短行程模組C細定位）來協助瞭解，此在圖工 中並未詳、、田、’曰出。然而，在一晶圓步進器（與步進掃描裝置 相反）《例子中，光罩檯Μτ可為僅連接至一短行程致動器， 或者其可為固定的。 所述裝置能以兩種不同模式使用： 少 ，'模式中，光罩檯MTS持為實質靜止，且整個光 罩影像一次（亦即置、A q ’人閃光’）投射在一目標部分C上。然後 基板棱WT以X及/$v、 或万向移位使一不同目標部分C能受光 束PB輻照； ϋ 87659 15 200419313 2. 在掃描模式中，本質上運用相同方案，差別在於一給 定目標部分C並非單次“閃光，，曝光。取而代之為光罩檯mt 可在一給定方向（習稱之“掃描方向”，例如Y方向）以一速度V 移動，使得投影束PB掃過一光罩影像；在此同時，基板檯 WT同時沿相同或相反方向以速度v=Mv移動，其中Μ為透鏡 PL之放大率（通常Μ= 1 /4或1 /5)。依此方式讓較大目標部分c 能受到曝光而無須犧牲解析度。 圖2描繪本發明之一實施例。一輻射束2橫越過一反射器3 。此輪知將會造成反射咨3之表面3 a之原子中的電子移動 至較高的能量狀態。當電子返回較低能階時，原子便會輻 射出冷光輕射。冷光輻射之波長係視電子掉落至較低能階 時所釋放出來之能量量值而定。因此，當輻射束入射在反 射器上時由反射器所發出之冷光輻射係由複數個不連續波 長帶之輻射所構成。每一波帶中之冷光輻射的強度及波帶 之位置係視製造該反射器之材料及入射束之強度而定。 冷光輕射係全方位照射。因此，可將一感應器4設置在可 自表面3 a偵測該冷光輻射之位置，而不需要設在該輻射束2 之入射路徑2a或反射路徑2b上。感應器4可以為一 CCD攝像 機或一單一二極體。 感應咨4可自輻射束2入射於其上之反射器3之表面3a偵測 到冷光輻射5。或者，藉由使用適當光學裝置，諸如透鏡6 ’可將輪射束2入射在反射器3上之區域3a的影像投影在感應 器4上。然後，可利用感應器4來監視輻射束之整個截面上 的強度。這是相當有用的，因為舉例來說，在一投影束中 87659 -16- 200419313 ，吾人希望能夠確保光束強度在其截面上為均勾的。 不論感應器係自輻射束2入射於其上之反射器的整個區 域3 a或自反射！§内邵之不連續邵位偵測該冷光輕射，感應器 4皆可偵測來自於反射器3之全部冷光輻射（亦即，幾乎包含 所有波長）’ 一控制裝置便可據此來估算輻射束或輻射束部 位之強度。或者，感應器可針對與反射器材料中之電子狀 態變化有關之複數個特定波長來偵測該冷光輕射之強度。 然後，該控制裝置便可更精確地自反射器之原子中之狀態 變化的機率以及在每一相關波長中之冷光輻射的強度來測 該輪射束之強度或輕射束部位的強度。 藉由監視特定波長之強度，其亦可將反射器上的污染物 加以特徵化。舉例來說，其可以測定在反射器表面上之污 染物層之成份及/或厚度，因為污染物之特徵電子狀態電荷 與反射器所具有的特徵電子狀態電荷不同。 感應為亦可以與輻射束所入射之任何表面相配合。詳言 之’其可以與未圖案化輻射投影束或圖案化輻射投影束配 合使用。在前者例子中，感應器最好與一接近該輻射源之 反射器相配合。在每一反射中，輻射束之強度會減少，因 此自每一表面所射出之冷光輻射的量值亦會減少。因此， 該感應器可以與一反射器相配合，其中該反射器為照射系 統（一邵分，或者位在照射系統之光束正下方處。 詳舌之，感應器可以與照射系統之場域及/或曈面反射鏡 相配口 °這些係用以增進在投影束在整個截面上的強度均 勻度。面鏡可能需要加以調整，以獲得所需要之場域強度 87659 -17- 200419313 分佈。然後，該感應器便可用以測定在該面鏡處或後續元 件處之投影束的強度分佈。因此，便可決定兮 穴弋々面鏡所需之 碉整。關於場域及瞳面反射鏡的進一步資訊係揭霖在歐、〜 專利申請第0225 193 3.4號，其内容援引為本案之參考。 應瞭解，該感應器亦可以與一反射器相配合，其中兮反 射器位在實際光束的極下方處，俾用以監視許多反射哭的 可能損失。或者在另一種方式中，該感應器可以與一反射 器相配合，其中該反射器位在該圖案形成構件之光束正下 方處。舉例來當圖案开；?成構件為一可程式圖案形成構 件時，便可利用此方式來確認通過圖案形成構件之強度分 佈是否如預期及/或提供回饋給該可程式圖案形成構件，以 提供所需要之校正。 该感應器尤其可以與投影系統中之反射器相配合。由於 目前所知並未有任何適當材料可用以製造與EUV輻射相容 之折射性透鏡，因此使用EUV輻射作為投影光束之微影裝置 必須倚靠反射性光學裝置。此一投影系統之一實例係描繪 於圖3中。反射器、Μ2、Μ;、Μ*可用以將圖案形成構件 MA之影像投影在基板W上。利用反射性光學裝置之投影系 統的進一步資訊係揭露在歐洲專利£1>1，2〇9,5〇3八號中，其 内容在此援引為本案之參考。 在使用EUV輻射之微影投影裝置的例子中，反射器可以為 分佈型布雷格（Bragg)反射器，例如，由複數交替之鉬層及 矽層所組成。這些分佈型布雷格反射器可加以覆層，以保 持底層。大部分的冷光輻射可自該覆層射出，因此用以製 87659 -18- 200419313 造該覆層之材料應加以選擇，以使冷光輻射最大化。或者 ，可用於本發明之反射器或其特定區域可以塗覆一額外的 螢光層，以加強冷光輻射。 感應器4可以僅鄰接該反射器3。然而，這並非為常例。 在輻射束2為EUV輻射的裝置中，光束路徑可以位在一抽真 空之腔室中，以減少強度的損失。然而，冷光輕射5將會具 有不同的波長，然其因此將較不會遭受到強度的損失。因 此’感應器4可以定位在真空腔室外面，且該冷光輻射5可 貫穿一可使冷光輻射穿透之面板。 可以利用對投影束之部位或圖案化光束（或整體光束）之 測定來確定在基板上之光阻劑接收到正確的曝照。舉例來 說，这可以藉由調整光阻劑之曝照時間或藉由相應於所測 得之強度值來調整照㈣統所產生之輻射束來達成。 儘管以上已說明本發明之特定實施例，然應暸解本發明 能以上述以外的方式來實施。以上之說明並非用以侷限本 發明。 【圖式簡單說明】 圖1係描繪依照本發明之—舍 ^ 只施例之微影投影裝置； 圖2係描續依照本發明之—實施例之感應器的配置；及 圖3係描續-由反射器所構成之投影系統。 在諸圖式中，相同的元件符南 1卞付琥係標示相同的部件。 【圖式代表符號說明】 2 輻射束 2a 入射路徑 87659 -19 - 200419313 2b 反射路徑 3 反射器 3a 表面 4 感應器 5 冷光輻射 6 透鏡 AM 調整裝置 C 目標部分 CO 聚光器 Ex 照射系統 IF 干涉測量構件 IL 照射系統 IN 積分器 LA 照期源 MA 光罩 MT 光罩檯 PB 投影光束 PL 早兀 M 1 _4 反射器 -20- 87659Zant ’1997 Third Edition, ISBN 〇_〇7_〇6725 () _ 4. For the sake of intervening, the projection system may be referred to as "lens" in the following; however, the term should be interpreted broadly to include various types of projection systems, including, for example, refractive optics: reflective optics and refractive inversion systems. Pure systems can also include components or optical elements based on any design type such as pointing, modeling, or controlling a radiation projection beam, and these components are hereinafter referred to as "lens." In addition, Ikiki or early substrate stage (and / or two or more photomasks: two, four, two or more u Youzhuo) 爻 type. In this "Duoping two," strike :: Out: The stations can be used in parallel, or can be accessed in one or more; the same as 3. Preparatory steps on one or more other stations. For example, see US patent m Π Q /; n ten. Sincerely installed Wu Guo patent brother No. 5,969,441 and international premium coffee number, these patent cases are cited by way of and specifically = = resist can receive the correct exposure dose, the radiation beam on the substrate plane during the period of interest Strength is important. Unfortunately, without changing the intensity or changing the intensity distribution (uniformity), the intensity measurement during exposure is extremely difficult to perform. In lithographic devices known by m, a combination of sensors is usually used to reduce disturbances-a first sensor is suspended and attached to a substrate stage so that it can be positioned in a beam for measurement between exposures, and n The reactor is positioned at an appropriate position in the optical circuit, such as' women's clothing on a part of a reflector, to measure the intensity of the beam # 彳 乂 during exposure. The first sensor between exposures is used The extremely accurate measurement of the intensity of the traveling beam and the distribution of the intensity of the beam can be made, and the characteristics of the device can be analyzed by the relative and measured by different sensors under different conditions. Then you can use this data and only use The value of the second induction button is used to predict the intensity on the plane of the substrate. The disadvantage of this method is that there is always a disturbance in the intensity by the presence of a sensor. Or one of the devices is in the device. The reflector may be partially silver plated so that a part of the incident light can pass through the reflector to a sensor behind the reflector, or a part of the light beam can be redirected to an induction 87659 200419 313. This configuration will basically reduce the intensity of the projection beam, which will lead to the yield of the device. Devices using EUV radiation are particularly sensitive to this problem, because EUV reflectors are extremely inefficient in their characteristics. For EUV radiation Highly reflective mirrors are not yet available. Furthermore, in lithographic projection devices using EUV radiation, the projection beam is irradiated in a vacuum system to prevent loss of intensity. Therefore, the beam intensity sensor must also be Positioned in the vacuum pumping system, it must be designed to be compatible with the vacuum environment and not vent when placed in a vacuum. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for measuring the projection beam. Intensity component, which can determine the intensity of the beam through its cross-sectional area and is compatible with the υυν device. _ This and other purposes can be achieved in accordance with the lithography device detailed in the previous paragraph, which is characterized by: -The sensor detects the cold light radiation from a plurality of locations in the area of the element to which the beam is incident from the unillustrated projection beam and the patterned projection beam; And the component for measuring the intensity of the beam is to measure the intensity of one of the unpatterned projection beam and the patterned projection beam in each part. In one of the unpatterned projection beam and the patterned projection beam, Among them, the intensity at this part can be determined by the detected cold light radiation. Cold light:-Spontaneous emission generated by thermally excited substances. Two different types of faces and the general public ... can be generated according to Recognized by the mechanism of the thermally excited state: for example, 'chilling first (excitation state produced by absorption of photons), radiant cold light 87659 -10-200419313 (privately excited by high energy particles or light emission)> 1 foot for π excitation Cold light), sonar cold light (cold light excited by sound waves), friction cold light (cold light generated by rubbing specific solids together), and chemical cold light (cold light generated by a chemical reaction). In addition, 'cold light' can also be identified by the relationship between excitation and emission, such as fluorescent light (the phosphorescent phosphorescence that occurs only during the excitation of matter (luminous light generated or sustained after the excitation of matter). The degree of cold light produced by the device's components upon the incidence of the projected beam (presumably the magic system created by the incident light beam's transformation of atoms in the surface can be measured by a number of factors, including the characteristics of the incident energy beam ( For example, the photon ilb and wavelength) and the characteristics of the element (such as the material used). The distribution of the light emitted by the 10,000 / T light is usually arbitrary. Therefore, the sensor does not need to be located on the M path. Therefore, Han The beam will not be changed due to the presence of the sensor. In this way, the WM ^ ^ and ^ sensors can be used to detect the radiation beam in the beam (the intensity of the entire cross-section and the intensity of the split and the beam The overall intensity. For example, the component that detects light emission in cold light can be a multilayer stack that forms a distributed Bragg reflection state or a known grazing incidence concentrator. In particular, the component can be a division of a projection system. And / or the part of the illumination system and / or the first reflector on which the unillustrated beam can be incident. The element can be part of the illuminator in particular. It should be in a broad spectrum Detect the combined intensity of cold light radiation 'or to more accurately determine the intensity of the radiation beam, the sensor can detect one or more expected wavelengths corresponding to the radiation to be emitted (the state of the atom in the reflection due to the radiation beam) Caused by the change in the intensity of the cold light beam in the narrow band 87659 200419313. Since the projection beam is EUV radiation, at least a part of the pattern forming member, the projection system substrate, and the radiation system is contained in a vacuum chamber. In order to reduce the loss of beam intensity due to the absorption of ElJV radiation. However, the 々, 4¾ radiation can be said to be at different wavelengths, for example, in the visible range, it will not be absorbed to a certain extent like EUV. Therefore, in a preferred embodiment, the sensor can be positioned outside the vacuum chamber. In this way, the sensor does not need to be vacuum compatible. However, all can detect cold light radiation The measured unpatterned projection beam or patterned shadow beam < the intensity of the Shao bit 'can be used to adjust the intensity of the light beam generated by the target system when the target portion of the substrate is exposed, or to adjust the projection beam According to another aspect of the present invention, a component manufacturing method is provided, which includes the following steps:-providing a substrate, the substrate is at least partially covered by a radiation-sensitive material layer;-using an irradiation system to Providing a radiation projection beam;-using a pattern forming member to make the projection beam have a pattern on its cross-section;-projecting a patterned radiation beam onto a target portion of the radiation-sensitive material layer,-using a sensor To detect cold light radiation from at least a part of an area on an element of a device traversed by one of the unpatterned projection beam and the patterned projection beam, 87659 -12-200419313-for self-detection The measured cold light radiation is used to determine the intensity of one of the unpatterned projection-shadow beam and the patterned projection beam in the part, which is characterized by: The cold light radiation is detected in a plurality of parts of the area where the projection beam and the patterned projection beam are incident to one of the elements-to determine the unpatterned projection beam and the patterned projection beam in each of the parts One of them projects the intensity of the beam. Although in this specification reference may be made in particular to the use of the device according to the invention in the manufacture of integrated circuits, it should be understood that this device has many other possible applications. For example, it can be used in the manufacture of integrated optical systems, magnetic field recording and detection graphics, liquid crystal display panels, and thin-film magnetic heads. Those skilled in the art will understand that the use of the terms "rectile", "wafer" or "die" in this specification in the description of these possible applications should be used It is considered to be replaced by the more general terms "mask (masl <),", "substrate", and "target portin", respectively. In this specification, the word "light "Radiation" and "beam plus radiation", the term covers all types of electromagnetic radiation, including ultraviolet radiation (such as radiation with a wavelength of 365, 248, 193, 157, or 126 nm) and extreme ultraviolet (EUV) radiation (For example, the wavelength is within 5-20 nanometers, and particle beams, such as ion beams or electron beams. Embodiments of the present invention will be described below with reference to the accompanying drawings. [Embodiment] 贵 实施 例 1 87659 200419313 Fig. 1 schematically illustrates a lithographic projection device according to a specific embodiment of the present invention. The device includes:-an illumination system Ex, IL, which is used to supply a projection radiation beam PB (such as EUV radiation). Example also includes a radiation source la -A first object stage (mask stage) MT, which is provided with a mask holder for supporting a mask MA (such as a king mask), and is connected to make the mask accurate relative to the unit PL A first positioning member pM for positioning;-a second object table (substrate table) WT, which is provided with a substrate holder for supporting a substrate (such as a Shixi wafer to a cloth resist agent), and is connected to the substrate; The second positioning member pw for precisely positioning the substrate relative to the unit PL; and then to the system ("lens") PL (for example, a group of mirrors), which is used to separate one of the two photomasks M A without illumination. It is reflected on a target part of the substrate w (for example, including one or more dies). The device described here is a reflective device (for example, a reflective mask). However, as a whole, for example, It can also be a transmissive device (equipped with a transmissive mask). Alternatively, the device can use other types of patterning members, such as one of the programmable mirror array types mentioned above. The light source LA (such as a laser Generating source or plasma source) generates a radiation beam which is directly After having traversed the adjustment member (such as a beam expander Εχ), it is sent to an illumination system (illuminator) IL. The illuminator IL may include an outer radial range and / or an inner radial range for setting the intensity distribution within the beam. (Usually referred to as outer σ and inner σ, respectively). In addition, it usually includes various other components, such as an integrator and a condenser c0. In this way, the light beam irradiated onto the mask MA pb has the required uniformity and intensity distribution in its cross section 87659 -14-200419313. As shown in Figure 1, it should be noted that the light source LA may be in the housing of the lithographic projection device (for example, as is common The light source LA is an example of a mercury lamp), but it can also be far away from the lithographic device, and the light beam generated by it is guided into the device (for example by means of a suitable pointing mirror); the latter case is usually This is the case when the light source LA is a laser. The scope of the present invention and patent application covers both architectures. The light beam PB then meets the mask MA, which is supported on a mask table Mτ. The light beam PB is selectively reflected by the mask MA and passes through the projection system pL, which focuses the light beam PB on the target portion c of the substrate w. With the assistance of the second positioning member (and the interferometry member IF), the substrate table WT can be accurately moved, for example, thereby positioning the different target portions c in the path of the beam four. Similarly, the first foot position member can, for example, accurately position the path of the mask MA relative to the beam chirp after the mask MA is mechanically retracted from a mask library or during a scan. In general, the movement of the object table can be assisted by long stroke mode and (rough position) and a short stroke module C fine positioning). This is not detailed in the drawing. 'Just out. However, in a wafer stepper (as opposed to a step-scanning device) example, the reticle stage Mτ may be connected to only a short-stroke actuator, or it may be fixed. The device can be used in two different modes: Less, 'In the mode, the mask stage MTS is held essentially still, and the entire mask image is projected once (ie, A q' human flash ') on a target portion C on. Then the substrate edge WT is shifted by X and / $ v, or universally so that a different target portion C can be irradiated by the beam PB; ϋ 87659 15 200419313 2. In the scanning mode, the same scheme is essentially used, the difference is that The target portion C is not a single "flash, exposure. Instead, the mask stage mt can be moved in a given direction (known as the" scanning direction ", such as the Y direction) at a speed V, so that the projection beam PB passes over A mask image; at the same time, the substrate table WT moves simultaneously at the same or opposite direction at a speed v = Mv, where M is the magnification of the lens PL (usually M = 1/4 or 1/5). The larger target portion c can be exposed without sacrificing resolution. Figure 2 depicts an embodiment of the present invention. A radiation beam 2 crosses a reflector 3. This round of knowledge will cause the atoms 3a of the surface 3a to be reflected. The electrons in it move to a higher energy state. When the electrons return to a lower energy level, the atoms will radiate cold light. The wavelength of the cold light radiation depends on the amount of energy released when the electrons fall to a lower energy level. Value. Therefore, when the radiation beam is incident on the reflection The cold light radiation emitted by the reflector when it is on the reflector is composed of radiation in a plurality of discontinuous wavelength bands. The intensity of the cold light radiation in each band and the position of the band are determined by the material and the incident beam from which the reflector is made The intensity of cold light is all-round irradiation. Therefore, an sensor 4 can be set at a position where the cold light radiation can be detected from the surface 3a, instead of being set on the incident path 2a of the radiation beam 2 or On the reflection path 2b. The sensor 4 can be a CCD camera or a single diode. The sensor 4 can detect the cold light radiation 5 from the surface 3a of the reflector 3 on which the radiation beam 2 is incident. Or, by The image of the area 3a of the wheel beam 2 incident on the reflector 3 can be projected on the sensor 4 by using appropriate optical means, such as a lens 6 '. Then, the sensor 4 can be used to monitor the entire cross section of the radiation beam Intensity. This is quite useful, because for example, in a projected beam 87659 -16- 200419313, we want to be able to ensure that the beam intensity is uniform across its cross section. Regardless of whether the sensor is incident from the radiation beam 2 Upper reflector The whole area is 3 a or self-reflection! § The internal shaw discontinuity detects the cold light, and the sensor 4 can detect all the cold light radiation (ie, almost all wavelengths) from the reflector 3 '- The control device can estimate the intensity of the radiation beam or the radiation beam position accordingly. Alternatively, the sensor can detect the intensity of the cold light light for a plurality of specific wavelengths related to changes in the state of the electrons in the reflector material. Then, The control device can more accurately measure the intensity of the wheel beam or the intensity of the light beam portion from the probability of state changes in the atoms of the reflector and the intensity of the cold light radiation at each relevant wavelength. The intensity of a specific wavelength can also characterize the contaminants on the reflector. For example, it can determine the composition and / or thickness of the pollutant layer on the surface of the reflector because the characteristic electronic state charge of the contaminant is different from the characteristic electronic state charge of the reflector. Induction is also compatible with any surface on which the radiation beam is incident. In particular, it can be used in combination with an unpatterned radiation projection beam or a patterned radiation projection beam. In the former case, the sensor is preferably matched with a reflector close to the radiation source. In each reflection, the intensity of the radiation beam is reduced, so the amount of cold light radiation emitted from each surface is also reduced. Therefore, the sensor can be matched with a reflector, wherein the reflector is an illumination system (one point, or located directly below the beam of the illumination system. To be more precise, the sensor can be connected to the field of the illumination system and And / or mating mirror matching ports. These are used to increase the uniformity of the intensity of the projected beam over the entire cross-section. The mirror may need to be adjusted to obtain the required field intensity 87659 -17- 200419313 distribution. Then, The sensor can be used to determine the intensity distribution of the projected beam at the mirror or at the subsequent elements. Therefore, the required correction of the acupoint mirror can be determined. Further on the field and pupil mirrors The information is Jie Lin's patent application No. 0225 193 3.4, the content of which is incorporated by reference in this case. It should be understood that the sensor can also be matched with a reflector, where the reflector is located under the pole of the actual light beam It is used to monitor the possible loss of many reflections. Or, in another way, the sensor can cooperate with a reflector, wherein the reflector is located in the pattern forming member. Just below the beam. For example, when the pattern is opened; when the forming component is a programmable pattern forming component, you can use this method to confirm whether the intensity distribution of the pattern forming component is as expected and / or provide feedback to the programmable pattern. The component is formed to provide the required correction. The sensor can be used in particular with a reflector in a projection system. Since no suitable material is currently known to make refractive lenses compatible with EUV radiation, it is used EUV radiation as a projection lithographic device must rely on reflective optics. An example of this projection system is depicted in Figure 3. The reflector, M2, M ;, M * can be used to project the image of the pattern-forming member MA On the substrate W. Further information on a projection system using reflective optics is disclosed in European Patent £ 1, 2,09,508, the contents of which are incorporated herein by reference. Use of EUV In the example of a radiation lithographic projection device, the reflector may be a distributed Bragg reflector, for example, composed of a plurality of alternating molybdenum layers and silicon layers. These distributed Bragg reflectors can be clad to maintain the bottom layer. Most of the cold light radiation can be emitted from the clad, so the material used to make the clad 87659 -18- 200419313 should be selected to make it cold. Radiation is maximized. Alternatively, the reflector or its specific area that can be used in the present invention may be coated with an additional fluorescent layer to enhance cold light radiation. The sensor 4 may only be adjacent to the reflector 3. However, this is not the norm. In the device in which the radiation beam 2 is EUV radiation, the beam path can be located in a vacuum chamber to reduce the loss of intensity. However, the cold light 5 will have a different wavelength, but it will therefore be less likely Suffered a loss of strength. Therefore, the 'inductor 4 can be positioned outside the vacuum chamber, and the cold light radiation 5 can penetrate a panel through which the cold light radiation can penetrate. The measurement of the location of the projected beam or the patterned beam (or overall beam) can be used to determine that the photoresist on the substrate has received the correct exposure. This can be achieved, for example, by adjusting the exposure time of the photoresist or by adjusting the radiation beam generated by the illumination system corresponding to the measured intensity value. Although specific embodiments of the invention have been described above, it should be understood that the invention can be implemented in other ways than those described above. The above description is not intended to limit the invention. [Brief description of the drawings] FIG. 1 depicts a lithographic projection device according to the present invention, which is only an example; FIG. 2 is a diagram illustrating a configuration of a sensor according to an embodiment of the present invention; and FIG. -A projection system consisting of a reflector. In the drawings, the same elements Fu Nan 1 Fu Fu are labeled with the same components. [Illustration of Symbols in the Drawings] 2 Radiation beam 2a Incident path 87659 -19-200419313 2b Reflection path 3 Reflector 3a Surface 4 Sensor 5 Cold light radiation 6 Lens AM Adjustment device C Target part CO Concentrator Ex Irradiation system IF Interferometry Component IL Illumination System IN Integrator LA Source of Time MA Mask MT Mask Table PB Projection Beam PL Early M 1 _4 Reflector -20- 87659