200417292 (1) 玖、發明說明 相關申請案之相互參考 本案主張於2002年5月8日提出申請之美國專利臨 時申請案60/378，693號案、2002年12月4日提出申請 之60/43 0，67 7號案及2 002年12月23日提出申請之 6 0/4 3 5，27 8號案，所有這些專利案皆在此援引爲本案之 參考。 【發明所屬之技術領域】 本發明係關於利用電漿觸媒以點火、調整及維持來自 於氣體之電漿的方法及裝置。 【先前技術】 已知一電漿可以藉由使一氣體受到足量的微波輻射來 加以點火。然而，在氣體壓力大致小於大氣壓力的情況下 ，電漿點火通常較爲容易。然而’用以降低氣體壓力之真 空設備相當昂貴’並且緩慢而耗費能量。再者，此類設備 之使用會限制製造的彈性。 【發明內容】 在此提供用於點火、調整及維持一電漿之電漿觸媒。 該電漿觸媒可爲被動型或主動型。依照本發明，一被動型 電漿觸媒可包括任何能夠藉由改變一局部電場（例如，一 電磁場）而引致產生一電漿之任何物體，其不需要添加額 -4 - (2) (2)200417292 外的能量。另一方面’ 一主動型電漿觸媒可包括在電磁輻 射存在的情況下能夠傳送足夠能量給一氣態原子或分子以 自該氣態原子或分子移除至少一電子的任何顆粒或高能量 波封包。在上述兩例中，一電漿觸媒可以改善或解除用以 點火一電漿之環境條件。 在此亦提供形成一電漿之方法及裝置。依照本發明之 一實施例中，該方法包包括使一氣體流入至一多重模式處 理凹室中，且在至少一被動型電漿觸媒存在的情況下，藉 由使一位在該凹室中之氣體受到具有小於約3 3 3 GHz之頻 率的電磁波照射來點火該電漿，其中該被動型電漿觸媒包 含一至少爲半導電性之材料。 在本發明之另一實施例中亦提供用於點火一電漿之方 法及裝置，其係藉由在一包含一粉末之電漿觸媒存在的情 況下，使一氣體受到具有小於約3 3 3 G Η z之頻率的電磁波 照射而達成。 在本發明又另一實施例中係提供利用一雙凹室系統來 形成一電漿之另外的方法及裝置。該系統可包括彼此流體 連通之一第一點火凹室及一第二凹室。該方法包括：（丨）使 第一點火凹室中之一氣體受到具有小於約3 3 3 G Η z之頻率 的電磁輻射照射，使得在第一凹室中之電漿會造成在該第 二凹室中形成一電漿；及（ii)藉由使該第二電漿受到其他電 磁輻射照射來維持第二凹室中之第二電漿。 本發明亦提供其他的電漿觸媒及用以點火、調整及維 持一電漿之方法及裝置。 -5- (3) (3)200417292 【實施方式】 本發明係關於用於點火、調整及維持用於各種不同應 用之電漿的方法及裝置，其中該等應用包括熱處理、人工 合成及沉積碳化物、氮化物、硼化物、氧化物及其他物質 、摻雜、滲碳、氮化及碳氮化、燒結、多部件處理、連結 、去結晶化、製造及運作火爐、廢氣處理、廢棄物處理、 焚化、刮除、灰化、成長碳結構、產生氫氣及其他氣體、 形成無電極電漿噴射流、在生產線上之電漿處理、殺菌、 淸潔等等。 本發明亦可用於可控制地產生熱及用於電漿輔助處理 ’以降低能量成本及增加熱處理效率及電漿輔助式製造彈 性。 因此，在此提供一種用於點火、調變及維持一電漿之 電漿觸媒。該觸媒可以爲被動型或主動型。一被動型電漿 觸媒包括能夠依照本發明藉由轉變一局部電場（例如，一 電磁場）引致產生一電漿之任何物體，而毋需透過該觸媒 來添加額外的能量，諸如藉由施加一電壓來產生一火花。 在另一方面’一主動型電漿觸媒亦可以爲任何能夠在電磁 輻射存在的情況下傳輸足量的能量至一氣態原子或離子以 自該氣態原子或分子移除至少一電子之粒子或高能量波封 包。 本案申請人共同擁有且同時申請之美國專利申請案的 全文援引爲本案之參考：美國專利申請案第 10/_，_號（代理人檔案編號1 8 3 7.0 00 8 )、美國專利 (4) 200417292 申請案第10/-，-號（代理人檔案編號1 8 3 7.000 9)、200417292 (1) (ii) Cross-references to related applications for invention descriptions This application claims US Patent Provisional Application No. 60 / 378,693 filed on May 8, 2002, and 60 / filed on December 4, 2002. Nos. 43 0, 67 7 and 6 0/4 3 5, 27 8 filed on December 23, 002, all of which are incorporated herein by reference. [Technical field to which the invention belongs] The present invention relates to a method and a device for using a plasma catalyst to ignite, adjust, and maintain a plasma from a gas. [Prior Art] It is known that a plasma can be ignited by subjecting a gas to a sufficient amount of microwave radiation. However, when the gas pressure is approximately less than the atmospheric pressure, plasma ignition is usually easier. However, 'vacuum equipment to reduce gas pressure is quite expensive' and is slow and energy consuming. Furthermore, the use of such equipment limits the flexibility of manufacturing. SUMMARY OF THE INVENTION A plasma catalyst for igniting, adjusting, and maintaining a plasma is provided herein. The plasma catalyst can be passive or active. According to the present invention, a passive plasma catalyst may include any object that can cause a plasma to be generated by changing a local electric field (eg, an electromagnetic field), which does not need to be added -4-(2) (2 ) 200417292. On the other hand, an active plasma catalyst may include any particle or high-energy wave packet capable of transmitting sufficient energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule in the presence of electromagnetic radiation. . In the above two examples, a plasma catalyst can improve or cancel the environmental conditions used to ignite a plasma. Methods and devices for forming a plasma are also provided herein. According to an embodiment of the present invention, the method includes flowing a gas into a multi-mode processing cavity, and in the presence of at least one passive plasma catalyst, by placing a bit in the cavity The gas in the chamber is irradiated with electromagnetic waves having a frequency less than about 3 3 3 GHz to ignite the plasma, wherein the passive plasma catalyst includes a material that is at least semi-conductive. In another embodiment of the present invention, a method and a device for igniting a plasma are also provided, which are performed by subjecting a gas to a pressure of less than about 3 3 in the presence of a plasma catalyst containing a powder. 3 G Η z electromagnetic radiation. In yet another embodiment of the present invention, there is provided another method and apparatus for forming a plasma using a dual-cavity system. The system may include a first ignition cavity and a second cavity in fluid communication with each other. The method includes: (丨) exposing one of the gases in the first ignition cavity to electromagnetic radiation having a frequency less than about 3 3 3 G Η z, so that the plasma in the first cavity will cause the A plasma is formed in the two recesses; and (ii) the second plasma in the second recess is maintained by exposing the second plasma to other electromagnetic radiation. The invention also provides other plasma catalysts and methods and devices for igniting, adjusting and maintaining a plasma. -5- (3) (3) 200417292 [Embodiment] The present invention relates to a method and a device for igniting, adjusting and maintaining a plasma for various applications, such applications including heat treatment, artificial synthesis, and carbon deposition Compounds, nitrides, borides, oxides and others, doping, carburizing, nitriding and carbonitriding, sintering, multi-component processing, bonding, decrystallization, manufacturing and operation of furnaces, exhaust gas treatment, waste treatment , Incineration, scraping, ashing, growing carbon structure, generating hydrogen and other gases, forming electrodeless plasma jets, plasma processing on the production line, sterilization, cleaning and so on. The invention can also be used to controllably generate heat and be used in plasma assisted processing 'to reduce energy costs and increase heat treatment efficiency and plasma assisted manufacturing elasticity. Therefore, a plasma catalyst is provided for igniting, modulating, and maintaining a plasma. The catalyst can be passive or active. A passive plasma catalyst includes any object capable of causing a plasma by transforming a local electric field (eg, an electromagnetic field) in accordance with the present invention without adding additional energy through the catalyst, such as by applying A voltage to produce a spark. On the other hand, an active plasma catalyst can also be any particle or particle capable of transmitting a sufficient amount of energy to a gaseous atom or ion in the presence of electromagnetic radiation to remove at least one electron from the gaseous atom or molecule. High energy wave packet. The full text of the US patent application jointly owned by the applicants of this case and applied for at the same time is cited as a reference to this case: US Patent Application No. 10 / _, _ (Agent File No. 1 8 3 7.0 00 8), US Patent (4) 200417292 Application No. 10 /-,-(agent file number 1 8 3 7.000 9),
美國專利申請案第10/ ， ^ im I —一派（代理人檔案編號 -號（代理人 1 8 3 7.00 1 0)、美國專利申請案第ι0/ 檔案編號183 7 ·001 1)、美國專利申請案第 107——，——號（代理人檔案編號1837·0012)、美國專利 申請案第10/——，——號（代理人檔案編號1 8 3 7.00 1 3 )、 美國專利申請案弟1 〇/-’--號（代理人檔案編號 _號（代理人 1 8 3 7.00 1 5 )、美國專利申請案第ι〇/ 檔案編號1837.0016)、美國專利申請案第 107——，——號（代理人檔案編號1 8 3 7·〇017)、美國專利 申請案第10/——，——號（代理人檔案編號1 8 3 7.00 1 8)、 美國專利申請案第10/一一一’ _號（代理人檔案編號 1 8 3 7.0020)、美國專利申請案第ι〇/一一，_號（代理人 檔案編號1837.0021)、美國專利申請案第 1 0 /-’ -5虎（代理人檔案編號1 8 3 7 · 〇 〇 2 3 )'美國專利 申請案第10/-’ -號（代理人檔案編號1 8 3 7.0 024)、 美國專利申請案第i 〇/-’ -號（代理人檔案編號 18：>7.0025)、美國專利申請案第， 號（代理人 檔案編號1 8 3 7.0 0 2 6 )、美國專利申請案第 1〇/——，——號（代理人檔案編號1 8 3 7.002 7)、美國專利 申請案第10/——，——號（代理人檔案編號1 8 3 7.002 8)、 美國專利申請案第1 〇/-，_觉（代理人檔案編號 1837.0030)、美國專利申請案第1〇/^_， 號（代理人 槍案編號1837.0032)及美國專利申請案第 (5)200417292 10/ 5虎（代理人檔案編號1 8 3 7.0 0 3 3 )。 闡述電獎系統 圖1顯示依照本發明之〜態樣之示例性電漿系統} 〇 。在此實施例中，凹室12形成在一容器中，該容器定位 在輻射腔室（亦即，施加器）丨4。在另一實施例中（未圖示） ，容器12與輻射腔室14爲相同，藉此便可避免需要兩個 獨立的元件。形成有凹室12之容器可包括一個或多個輻 射穿透性絕緣層’以增進其熱絕緣特性但不會明顯地屏蔽 該凹室1 2照射輻射。 在一實施例中，凹室12形成在一由陶材所製成之容 器中。由於依照本發明可達成極高的溫度，因此可採用能 夠在3000 °F溫度下操作之陶材。該陶材可包括重量百分 比2 8 · 9 %的矽土、6 8 · 2 %的礬土、〇 · 4 %的氧化鐵、1 %的二 氧化鈦、〇 . 1 %的石灰、0 · 1 %的氧化鎂、0.4 %的鹼，此材 料由美國賓州 New Castle 郡之 New Castle Refractories 公 司以LW-3 0之型號販售。然而，對於此技藝有普通瞭解 之人士應可瞭解，其他材料，諸如石英，以及不同於上述 之諸多材料都可使用於本發明中。 在一成功的實驗中，電漿形成在一部分打開的凹室中 ，該凹室位在一第一方塊內部並以一第二方塊加以蓋頂。 該凹室具有約2英吋乘以約2英吋乘以約1 · 5英吋之尺寸 。在該方塊中亦設有至少兩個開孔，以與該凹室相連通·· 其中一開孔用以觀看該電漿，且至少一開孔用於提供氣體 (6) (6)200417292 。凹室之尺寸可取決於所欲執行之合適電漿製程而定。再 者’該凹室亦應至少構形爲可防止電漿溢出/飄流出主要 處理區域。 凹室12藉由可由電源28供電之管路2〇及控制閥22 而連接至一個或多個氣體源24(例如，氬氣、氮氣、氦氣 、氖氣、氪氣供應源）。管路20可以爲管體（例如，介於 約1Π6英吋及約1/4英吋之間，諸如約1/8英吋）。再考 ’若有需要，可將一真空栗連接至腔室以移除在電漿製程 期間產生之煙氣。在一實施例中，氣體可經由在一多部件 式容器中之一個或多個間隙而流入及/或流出凹室1 2。藉 此，相符於本發明之氣體孔口便不一定需要爲特定之開孔 ，而是可以具有其他型式，諸如許多細小的分散開孔。 一輻射洩漏偵測器（未圖示）安裝在供應源26及波導 3 〇附近，並且連接至一安全互鎖系統，俾當偵測到一拽 漏量高於一預定安全限制値（諸如FCC及/或OSHA(例如 ，5m W/cm2))時，可自動關閉該輻射（例如，微波）電源。 可由電源供應器28供電之輻射源26係經由一個或多 個波導3 0而將輻射能量直接導入至輻射腔室1 4中。對於 此技藝有普通瞭解之人士應可明白，輻射源2 6可直接連 接至凹室12，藉此避免該波導30。進入至凹室12中之輻 射能量係用以在該凹室中點火一電漿。此電漿可藉由耦接 具有觸媒之額外輻射而大致被維持且限制在該凹室。再者 ，一般相信輻射（例如’微波輻射）之頻率在許多應用中並 非重要。 -9- (7) (7)200417292 可經由循環器32及調整器34(例如，3段式調整器） 來供應輻射能量。調整器3 4可用以避免反射功率爲改變 點火或製程條件之函數，尤其係在電漿已形成之後，因爲 例如微波功率會由電漿所強力地吸收。 如以下將更爲詳細說明者，若腔室1 4支援多重模式 ，則在輻射腔室1 4中之輻射穿透型凹室1 2並非重要，尤 其當該等模式係連續或週期性地混合時。亦如以下將更爲 詳細說明者，馬達3 6可連接至模式混合器3 8，以製造出 大致均勻輸出該腔室1 4之時間平均的輻射能量分佈。再 者’窗口 40 (例如，一石英窗口）可配置在該腔室14相鄰 於該凹室12之一壁體，俾使溫度感應器42(例如，一光 學高溫計）可用以觀測到凹室1 2內部之製程。在一實施例 中，該光學高溫計輸出値可自零伏特隨著溫度上升而增加 至追蹤範圍。 感應器42可形成輸出信號爲溫度或與一位在凹室12 中之工件（未圖示）有關之任何其他可監視條件的函數，並 且提供信號至控制器44。亦可使用雙溫度感測及加熱， 以及自動冷卻速率及氣流控制。控制器4 4接著便可用以 控制電源供應器2 8之操作，該電源供應器如上述具有一 輸出連接至輻射源26以及另一輸出連接至控制閥22，以 控制氣體流入至凹室1 2。 本發明在實務上已可同樣成功地採用由通訊及動力工 業（CPI)所提供之915MHz及2.45GHz的微波供應源，雖 然亦可採用具有任何小於 3 3 3 GHz頻率之輻射。該 -10- (8) (8)200417292 2 · 4 5 GHz系統可提供自約〇 · 5仟瓦至約5 . 〇仟瓦之連續可 變微波功率。一 3段式調整器可針對最大功率傳輸提供阻 抗匹配’且一雙向耦合器係用以測量正向及反射功率。再 者，光學高溫計係用以遠距感測樣本溫度。 如上所述’本發明可採用具有任何頻率小於3 3 3 G Η ζ 之輻射。舉例來說，可以採用頻率，諸如電源線頻率（約 5 0 Hz至約60Hz)，然而用以形成電漿之氣體壓力可能需要 降低以輔助點火。再者，本發明亦可採用任可射頻或微波 頻率，包括大於100kHz之頻率。在大部分的例子中，用 於此類較高頻率之氣體壓力並不一定要降低以點火、調整 或維持一電漿，藉此可使許多電漿製程在大氣壓力或以上 之壓力下來進行。 該設備由電腦使用LabView 6i軟體所控制，該軟體 可以提供即時溫度監視及微波功率控制。藉由使用適當數 量資料點的移動平均數可降低雜訊。再者，爲增進速度及 計算效率，在緩衝陣列中所儲存的資料點數量可利用位移 暫存器及緩衝器縮放來加以限制。 該高溫計測量大約1平方公分的感應面積的溫度，其 用以計算一平均溫度。該高溫計感測兩波長之輻射強度， 且利用普朗克定律（P 1 a n c k ’ s 1 a w)插入這些強度値來測定 溫度。然而，應瞭解，在本發明中亦可使用其他裝置及方 法來監視及控制溫度。在本發明中可以使用之控制軟體係 掲露在例如本案申請人共同擁有的美國專利申請案 1 0 /_，_(代理人檔案編號爲1837.0033)，該案全文 -11 - (9) (9)200417292 內容援引爲本案之參考。 腔室Μ具有數個玻璃覆蓋之觀看孔口及轄射屏蔽以 及一用以使局溫計進入之石央窗口。亦提供有用以連接至 一真空栗之數個孔口以及一氣體源，然而這並不一定需要 使用。 系統10亦包括一封閉迴路去離子水冷卻系統（未圖示 )，以及一藉由自來水冷卻之外部熱交換器。在操作期間 ’該去離子水係先冷卻磁電管，然後在轉儲於循環器中（ 用以保護該電管）’且最後該輻射腔室通過焊接在腔室 外表面上之水通道。 電漿觸媒 依照本發明之一電漿觸媒可包括一或多種不同材料， 且亦可爲主動型或被動型。除此之外，可利用電發觸媒來 點火、調整及/或維持於一氣體壓力，該氣體壓力係小於 、等於或大於大氣壓力。 一種形成依照本發明之電漿的方法可包括使位在一凹 室中之氣體在被動型電漿觸媒存在的情況下受到電磁輻射 照射，該電磁輻射具有小於約3 3 3 GHz的頻率。依照本發 明之被動型電漿觸媒可包括任何能夠藉由依照本發明將一 局部電場（例如，一電磁場）轉變而引致產生一電漿之物體 ，而不需要藉由觸媒來增添額外的能量，諸如藉由供應一 電壓以產生一火花。 依照本發明之一被動型電漿觸媒亦可以爲一奈米顆粒 -12- (10) (10)200417292 或奈米管。在此所用之”奈米顆粒”一詞係指任何具有小於 約1 0 0奈米之最大物理維度且至少爲半導電性之顆粒。再 者，依照本發明，單壁式及多壁式且經摻雜或未經摻雜之 碳奈米管，由於其極佳的導電性及長形的形狀，因此特別 適用於點火電漿。該奈米管可具有任何習知的長度，且可 以爲一固定至一基板之粉末。若爲固定式，則在點火或維 持該電漿時’該奈米管可以在基板表面上任意定向或固定 至該基板（例如，以某預定方向）。 依照本發明，一被動型電漿觸媒亦可以爲粉末，且不 需要包含奈米粒或奈米管。例如，其可以由纖維、塵粒 、碎片或薄片等所形成。當爲粉末型式時，該觸媒可以至 少暫時地懸浮在氣體中。藉由使粉末懸浮在氣體中，該粉 末可以快速地散佈於整個凹室且若有需要，其可更容易被 消耗。 在一實施例中，該粉末觸媒可被攜入至凹室中，且至 少暫時地懸浮於一承載氣體中。再者，在被導入至凹室之 前，該粉末可被添加至氣體中。舉例來說，如圖1A所示 ，輻射源52可供應輻射至輻射凹室5 5，於其中設置有電 漿凹室60。粉末源65將觸媒粉末70提供至氣體75中。 在另一實施例中，粉末70可以塊狀（例如，一積塊）先添 加至凹室60，然後以數種方法散佈在凹室中，包括使一 氣體流經或通過該塊狀粉末。此外，粉末可藉由移動、輸 送、滴落、噴霧、吸拂或其他方式將粉末饋進或饋入該凹 室，俾添加至氣體中以點火、調整或維持一電漿。 -13- (11) (11)200417292 在一實驗中，藉由將一碳纖維粉末積塊放置在一伸入 至凹室之銅管中，而在凹室中點火一電漿。雖然將足量輻 射導入至凹室中，然而該銅管可屏蔽粉末受到輻照，且不 會發生電漿點火。然而，一旦承載氣體開始流經該管體， 將粉末迫出管體而進入至凹室，藉此可使粉末受到輻照， 電漿在凹室中便可被幾乎瞬間點火。 依照本發明之一粉末電漿觸媒可爲實質不可燃的，藉 此便可不需要包含氧氣或在氧氣存在下燃燒。如此一來， 如上所述’該觸媒可包括一金屬、碳、碳基合金、碳基複 合物、導電性聚合物、導電性矽酮橡膠、聚合奈米複合物 、有機-無機複合物及其任何組合。 再者，粉末觸媒可實質散佈在電漿凹室中（例如，當 懸浮在一氣體中），且在凹室中可以精確地控制電漿點火 。在某些應用中，均勻點火相當重要，包括那些需要簡單 電漿爆炸之應用，諸如以一個或多個爆炸之型式。再考， 粉末觸媒需要一特定的時間來將其散佈於一凹室，尤其在 複雜、多腔室凹室中。因此，依照本發明另一態樣，〜粉 末觸媒可經由複數個點火口而被導入至凹室中，俾能夠更 快速地獲得更均勻的觸媒分佈（參照下文）。 除了粉末以外，舉例來說，依照本發明之一被動型電 漿觸媒可包括譬如一個或多個微觀或巨觀纖維、薄片、針 體、細線、線束、纖管束、棉 '麻線、刨片、屑片、織物 '帶體、細絲或其任意組合。在這些例子中，該電漿觸媒 可具有至少一部分，該部分之實體尺寸可實質大於其他實 -14 - (12) (12)200417292 體尺寸。舉例來說，在至少兩正交尺寸之間的比率應至少 約爲1 : 2，但亦可大於約1 : 5或甚至大於約1 : 1 0。 因此，一被動型電漿觸媒可包括至少一材料部分，該 部分相較於其長度而言係相當薄。亦可採用一束狀觸媒（ 例如，纖維），且舉例來說可包括一石墨帶之片段。在一 實驗中，可成功地採用具有大約三萬束石墨纖維（每一束 具有約2-3微米直徑）之片段。纖維之數量以及束體之長 度對於點火、調整或維持該電漿並不重要。舉例來說，使 用大約四分之一英吋長之石墨帶片段可以得到令人滿意的 結果。依照本發明可成功使用一種碳纖維，其係由美國南 卡洲之安德森市的 Hexcel 公司以 Magnamite®之商標所 販售之型號爲 AS4C-GP3K的產品。再者，亦有成功地使 用矽-碳纖維。 依照本發明另一態樣之被動型電漿觸媒可包括一個或 多個部分，其舉例來說可大致爲球形、環圈狀、角錐形、 立方形、扁平狀、圓柱形、矩形或長形。 上述揭露之被動型電漿觸媒包括至少一材料，該材料 至少爲半導電性材料。在一實施例中，該材料可具有高導 電性。舉例來說，依照本發明之被動型電漿觸媒可包括〜 金屬、無機材料、碳、碳基合金、碳基複合物、導電性聚 合體 '導電性矽酮橡膠、聚合奈米複合物、有機-無機複 α物或其任意組合。某些可被包括在電漿觸媒中之可用的 無機材料包括碳、碳化矽、鉬、鉑、鎢、氮化碳及鋁，雖 然〜般相信其他導電性無機材料亦可具有良好功效。 -15- (13) (13)200417292 除了 一或多種導電性材料以外，依照本發明之一種被 動型電漿觸媒可包括一或多種添加劑（其不一定要具有導 電性）。在此所用之添加劑一詞可包括使用者所欲添加至 電漿中之任何材料。舉例來說，在摻雜半導體或其他材料 時，可經由觸媒來添加一種或多種摻雜劑。例如，參考本 案申請人共同擁有且同時申請之美國專利申請案第 10/_，_號（代理人檔案編號1837.0026)，該案全文 內容援引爲本案之參考。該觸媒可包括摻雜劑本身，或其 可包括一預成體材料，該預成體材料在分解之後可以形成 摻雜劑。因此，該電漿觸媒可依照任何所需之比率而包括 一或多種添加劑及一或多種導電性材料，此取決於最終所 想要的電漿成份及利用該電漿之製程。 被動型電漿觸媒中之導電性成份與添加劑之比率在消 耗的同時會隨時間改變。舉例來說，在點火期間，該電漿 觸媒可能有需要包括一較大比例的導電性成份以改善點火 狀態。另一方面，若在維持電漿時使用，則該觸媒可包括 較大比例的添加劑。對於此技藝有普通瞭解之人士應可瞭 解’用以點火及維持電漿之電漿觸媒的成份比例可以相同 〇 一預設之比率輪廓分佈可用以簡化許多電漿製程。在 許多習知的電漿製程中，在電漿中之成份可視需要來添加 ’但此類添加通常需要可程式設備依照預定的排程來添力口. 。然而，依照本發明，可以改變觸媒中之成份比率，並藉 以使電漿本身中之成份比率可以自動改變。換言之，在任 ，16- (14) (14)200417292 何特定時間中，在電漿中之成份比率可取決於觸媒的那一 個部分現在正由電漿所消耗。因此，在觸媒中之不同部位 的觸媒成份比率可以不同。且，在一電漿中之現行成份比 率可視該觸媒那一個部分及/或先前所消耗之部分而定， 尤其當一通過電漿腔室之氣體的流動比率較爲緩慢時。 依照本發明之一被動式電漿觸媒可以爲均質的、非均 質的或分級的。再者，在整個觸媒中，該電漿觸媒成份比 率可以連續或非連續地改變。舉例來說，在圖2中，該比 率可以平緩地改變以構成一沿著觸媒1 00之長度的梯度。 觸媒1〇〇可包括一束材料，其在片段105包括較低濃度之 成份以及一朝向片段1 1 0而連續遞增的濃度。 或者，如圖3所示，該比率可以在每一觸媒120中呈 不連續變化’其包括例如具有不同濃度之交錯部分1 2 5及 1 3 0。應瞭解’該觸媒1 2 0可具有兩個以上的部分類型。 因此’由電漿所消耗之觸媒成分比率能以任何預定型式改 變。在一實施例中，當電漿被監視且偵測到一特定添加劑 時，便可自動開始進行或結束進一步的製程處理。 改變在一維持電漿中之成分比率的另一方法係藉由在 不同時間或以不同比率導入多種具有不同成分比率之觸媒 。舉例來說，可種多種觸媒導入凹室中大致相同或不同的 部位。當導入不同部位時，形成在凹室中之電漿可具有由 不同觸媒之部位所決定之成分濃度梯度。因此，一自動化 系統可包括一裝置，俾藉以在點火、調整及/或維持電漿 之前及/或期間來機械式地置入可消耗的電漿觸媒。 -17- (15) (15)200417292 依照本發明之一被動型電漿觸媒亦可加以塗覆。在一 實施例中’一觸媒可包括一大致上非導電性之塗覆物沉積 在一大致爲導電性材料之表面上。或者，該觸媒可包括一 大致爲導電性之塗覆物沉積在一大致非導電性材料之表面 上。舉例來說，圖4及5顯示纖維14〇，其包括底層145 及塗覆物1 5 0。在一實施例中，一電漿觸媒包括一塗覆鎳 之碳核心，以防止碳氧化。 一單一電漿觸媒亦可包括多種塗覆物。若該塗覆物在 與觸媒相接觸期間被消耗，則該塗覆物可依序自外部塗覆 物至最內層塗覆物而被導入至觸媒中，藉此產生一時間解 除機制。因此，一經塗覆之電漿觸媒可包括任意數量的材 料，只要該觸媒之一部分爲至少半導電性。 依照本發明之另一實施例，一電漿觸媒係整體定位在 一輻射凹室中，以大致減少或防止輻射能量洩漏。在此方 式中’該電漿觸媒不會電性地或磁性地耦合該容納凹室之 容器或者與凹室外面之任何導電性物體相耦合。這可以防 止在點火孔產生火花，且若電漿被維持時，這可防止輻射 在點火期間或稍後滲洩至凹室外面。在一實施例中，該觸 媒可定位在一延伸通過一點火孔之大致非導電性延長件之 末梢。 舉例來說，圖6顯示於其中設置電漿凹室165之輻射 腔室160。電漿觸媒17〇呈長形且延伸通過該點火孔175 。如圖7所示，依照本發明，觸媒1 70可包括導電性遠端 部分180(其放置在腔室16〇中）及非導電性部分185(其大 -18- (16) 200417292 致放置在腔室1 6 0外面）。此一構形可 180及腔室160之間的電氣連接（例如， 在另一實施例中，如圖8所示，該 導電性區段1 9 0所形成，其中該等區段 性區段1 9 5所隔開並且機械式地與其相 例中，該觸媒可以延伸通過介於一位在 位在凹室外面之點之間的點火孔，但該 大大地防止火花及能量洩漏。 依照本發明之另一種形成一觸媒的 一凹室中之氣體在一主動型電漿觸媒存 有頻率小於約3 3 3 GHz之電磁輻射照射 可產生或包括至少一離子化顆粒。 依照本發明之一主動型電漿觸媒可 能波封包，其能夠在電磁輻射存在的情 能量給一氣態原子或分子，以自氣態原 一電子。視供應源而定，離子化顆粒能 之型式被導入至凹室中，其者其能以噴 其他方式導入。 舉例來說，圖9顯示可將輻射導入 之輻射源2 0 0。電漿凹室2 1 0係定位在 可允許一氣流經由孔口 2 1 5及2 1 6而 220將離子化顆粒225導入至凹室210 應源220可以藉由一金屬篩網所保護， 粒通過，但可屏蔽供應源220受到輻照 以防止在途_部分 產生火花）。 觸媒可以由複數個 係由複數個非導電 連接。在此一實施 凹室內部之點與一 電性不連續造型可 方法包括使一位在 在的情況下受到具 ，其中該電漿觸媒 以爲任何顆粒或高 況下來傳輸足量的 子或分子移除至少 以一聚合或準直束 灑、噴射、噴濺或 至輻射腔室205中 腔室205內部，且 流經其間。供應源 中。舉例來說，供 其可以讓離子化顆 。若有需要，供應 -19- (17) (17)200417292 源220可以爲水冷式。 依照本發明之離子化顆粒之實例包括X射線顆粒、伽 瑪（g a m m a )射線顆粒、阿爾法（a 1 p h a)顆粒、貝塔（匕e t a)顆 粒、中子、質子及其任意組合。因此，一離子化顆粒觸媒 可以帶電荷（例如，來自於一離子供應源之離子）或不帶電 荷，且可以爲放射性核分裂反應的產物。在一實施例中， 於其中形成電漿凹室之容器可以完全地或部分地穿透至離 子化顆粒觸媒。因此，當一放射性核分裂源定位在凹室外 面時，該供應源可導引核分裂產物通過容器以點火該電漿 。放射性核分裂源可定位在輻射腔室內部，以實質地防止 核分裂產物（亦即，離子化顆粒觸媒）發生安全性危害。 在另一實施例中，該離子化顆粒可以爲一自由電子， 但其並不一定要在一放射性衰減反應中發出。舉例來說， 該電子可藉由供能該電子源（諸如一金屬）而被導入至凹室 中，使得具有足夠能量之電子可以脫離該供應源。該電子 源可定位在凹室內部、與凹室相鄰或甚至定位在凹室壁體 中。對於此技藝有普通瞭解之人士應可明瞭，本發明亦可 採用電子供應源的任意組合。一種普遍用以產生電子的方 式爲加熱一金屬，且這些電子可藉由供應一電場而被進一 步加速。 除了電子以外，自由能質子亦可用以觸發一電漿。在 一實施例中，一自由質子可以藉由解離氫氣而產生，且視 情況需要，可以藉由一電場加速之。 依照本發明之主動型及被動型觸媒之一優點在於’其 -20 - (18) (18)200417292 能以一種大致連續方式來觸發一電漿。舉例來說，一點火 裝置僅能在一火花存在時才可觸發一電漿。然而，一火花 通常係藉由供應一電壓通過兩電極而產生。一般而言，火 花係週期性產生且由未產生火花之週期所隔開。在這些非 點火週期期間，一電漿不會被觸發。再者，舉例來說，點 火裝置通常需要電能來運作，然而依照本發明之主動型及 被動型電漿觸媒並不需要電能來運作。 多重模式輻射凹室 一輻射波導、凹室或腔室可設計成能夠支援或促進至 少一電磁輻射模式之傳播。在此所用之”模式，，一詞係指滿 足馬克士威爾方程式及可實行之邊界條件（例如，凹室之 邊界條件）之任何固定或傳播電磁波的特定樣式。在一波 導或凹室中，該模式可以爲傳播或固定電磁場之各種可行 樣式的任何一種。每一模式之特徵在於電場之頻率及極性 及/或磁場向量。一模式之電磁場樣式取決於頻率、折射 率或介電常數以及波導或凹室的幾何形狀。 一橫向電場（TE)模式係一種其電場向量垂直於傳播方 向之模式。類似地，一橫向磁場（TM)模式係一種其磁場向 量垂直於傳播方向之模式。一橫向電場及磁場（TEM)模式 係一種其電場及磁場向量皆垂直於傳播方向之模式。一中 空金屬波導通常並不支援一輻射傳播之垂直TEM模式。 即使輻射出現而沿著波導長度移動，其亦僅能以某些角度 由波導之內壁反射離開。然而，取決於傳播模式，該輻射 -21 - (19) (19)200417292 (例如’微波）可具有沿著波導之軸的某些電場分量或某些 磁場分量（通常稱之爲Z軸）。 在一凹室或波導內部的實際場分佈係內部模式的重疊 。每一模式可錯由一個或多個下標符號（例如，T E! Q (“ t e e ee one zero”）。該下標符號通常會列出在波導波長上在χ 及y方向上包含多少個，，半波”。熟習此項技術之人士應可 瞭解，波導波長與自由空間波長不同，因爲在波導內部的 輻射傳播係以某角度由波導內壁所反射。在某些例子中， 可添加一第三下標符號，以定義出有多少個沿著z軸之直 立波模式。 針對一給定的輻射頻率，可選擇波導之尺寸，以使其 小到以使其支援一單一傳播模式。在此例中，該系統可稱 之爲單模式系統（亦即，單模式施加器）。在一矩形單一模 式波導中，該ΤΕιο模式通常佔大多數。 隨著波導（或波導所連接之凹室）之尺寸的增加，該波 導或施加器有時可支援構成一多模式系統之額外較高階模 式。當許多模式被同時支援時，該系統通常可稱爲較高階 模式化。 一簡單、單一模式系統具有一場分佈，其包括至少一 最大及/或最小値。一最大値主要取決於供應至系統的輻 射量。因此，一單一模式的場分佈會有劇烈變化且大致爲 不均句。 不像一單一模式凹室，一多重模式凹室可同時支援數 種傳播模式，當該等模式重疊時，會造成一複雜的場域分 -22- (20) (20)200417292 佈樣式。在此一樣式中，場域傾向於在空間上模糊，且因 此該場域分佈通常不會在凹室中顯示相同類型的極小及極 大場域値。此外，如以下將更完全地說明，一模式混合器 可用以”激發”或”重新分佈”模式（例如，藉由一輻射反射 器之機械式運動）。此一重新分佈可在凹室中適當地提供 一更爲均勻的時間平均場域重新分佈。 依照本發明之一多重模式凹室可支援至少兩模式，且 可支援多於兩種模式。每一模式具有一極大的電場向量。 雖然可以有兩種或以上之模式，其中一模式爲主要模式且 具有比另一模式還大之最大電場向量値。如在此所用，一 多重模式凹室可以爲任何凹室，其中在第一及第二模式量 値之間的比率係小於約1:1 〇，或小於約1: 5，或甚至小於 約1 : 2。對於此技藝有普通瞭解之人士應可明白，該比率 愈小，則會愈加分佈多種模式之間的電場能量，進而在凹 室中會愈加分佈輻射能量。 在一處理凹室中之電漿分佈可主要取決於所供應輻射 之分佈。舉例來說，在一純粹單一模式系統中，其可能僅 具有一單一位置的電場爲最大値。因此，一強大電漿僅可 能形成在該單一位置上。在許多應用中，此一強大局部電 漿會不當地導致不均勻的電漿處理或加熱（亦即，局部性 過度加熱及加熱不足）。 依照本發明，不論採用一單一或多重模式凹室，對於 本技藝有普通瞭解之人士應可明白，於其中形成電漿之凹 室可以完全封閉或部分打開。舉例來說，在某些應用中， -23 - (21) (21)200417292 諸如電發輔助式鍋爐’該凹室可被完全封閉。舉例來說， 參考本案申請人共同擁有且同時申請之美國專利申請案第 1 0/ ——，-號（代理人檔案編號1837.0020)，該案全文 內容援引爲本案之參考。然而，在其他應用中，吾人可能 希望氣體流經該凹室，且因此該凹室必須打開至某一程度 。在此方式中，流動之氣體的流量、類型及壓力可隨時間 而改變。如此作法可能相當恰當，因爲某些氣體可以促進 電漿形成，諸如氬氣’其係較容易被點火，但在後續電漿 處理期間不能並不需要。 模式混合 對許多應用而Η，吾人需要一內含均勻電獎之凹室。 然而’由於微波輻射可能具有較長之波長（例如，幾十分 之一公分），因此可能難以達成一均勻的分佈。因此，依 照本發明之一樣態，在多重模式凹室中之輻射模式在經過 一段時間後可加以混合或重新分佈。由於在凹室中之場域 分佈必須滿足所有由凹室內表面（若爲金屬）所設定之邊界 條件，這些場域分佈可以藉由改變內表面之任何部分之位 置來加以改變。 在依照本發明之一實施例中，一可移動反射表面可以 定位在輻射凹室內部。當組合時，反射性表面之形狀及運 動在運動期間會改變凹室之內表面。例如，當繞任何軸線 轉動時，一”L”形金屬物件（亦即，”模式混合器”）將改變 凹室中之反射性表面之位置或方向，且因此改變其中之輻 -24- (22) (22)200417292 射分佈。亦可採用任何其他非對稱性形狀之物件（當轉動 時）’但對稱性形狀物件亦可具有功效，只要相對運動（例 如轉動、平移或兩者之組合）會對反射性表面之位置或方 向造成某些改變即可。在一實施例中，一模式混合器可以 爲一圓柱體，其可以繞著一非爲該圓柱體縱軸之軸線來轉 動。 多重模式之每一模式具有至少一最大電場向量，但這 些向量都可以在整個凹室之內部尺寸上週期性發生。通常 ’這些最大値爲固定的，假設輻射之頻率不會改變。然而 ’藉由移動一模式混合器使其與輻射相互作用，吾人便可 以移動該最大値之位置。例如，模式混合器3 8可用以最 佳化凹室1 4中之場域分佈，使得電漿點火條件及/或電漿 維持條件得以最佳化。因此，一旦電漿被激發時，針對一 均勻時間平均化電漿製程（例如，加熱），模式混合器之位 置可以被改變以移動最大値之位置。 因此’依照本發明，在電漿點火期間可以使用模式混 合。例如’當使用一導電性纖維作爲電漿觸媒時，吾人已 知該纖維之方向會大大地影響最小電漿點火條件。例如， 已有報告指出’當此一纖維定位成相對於電場而呈一大於 60之角度時，該觸媒幾乎不會增進或者解除這些條件。 然而’不論藉由移動凹室內或靠近凹室之反射性表面，該 電場分佈會大大地改變。 可譬如藉由一可安裝在施加器腔室內部之轉動波導接 頭來將輻射發射至施加器腔室中，如此亦可達到模式混合 -25- (23) (23)200417292 。該旋轉式接頭可以機械式移動（例如，轉動），以沿不同 方向將輻射有效射入至輻射腔室中。因此，在施加器腔室 中便可以產生一改變的場域樣式。 亦可以藉由一可撓性波導將輻射投入至輻射腔室中來 達成模式混合。在一實施例中，該波導可以安裝在腔室內 部。在另一實施例中，該波導可以伸入至該腔室中。可撓 性波導之端部位置可以任可適當方式連續或週期性移動（ 例如彎曲），以將輻射（例如，微波）以不同方向及/或位置 射入至腔室中。此一運動亦可以造成模式混合且促進更爲 均勻的以時間平均爲基準的電漿處理（例如加熱）。或者， 針對點火或其他電漿輔助製程，此一運動可用以最佳化一 電發之位置。 若可撓性波導爲矩形，則波導之開口端的簡單扭轉便 可轉動在施加器腔室內部之輻射中的電場以及磁場向量之 方位。然後，該波導之一週期性扭轉可產生模式混合以及 轉動電場，這可用以輔助點火、調整或維持一電漿。 因此，即使觸媒之初始方位垂直於電場，電場向量之 重新定向亦可將無效方位改變至一較有效之方位。習於此 技者應知，該模式混合可以爲連續性、週期性或預先程式 化。 除了電漿點火以外，在後續電漿處理期間亦可使用模 式混合，以減少或產生（例如，調整）腔室中之，，熱點，，。當 一微波凹室僅支援少量的模式時（例如，小於5)，一或多 個局部化雷場最大値可導致”熱點，，（例如，在凹室1 2中） -26- (24) 200417292 。在一實施例中，這些熱點可加以構形以符合一個或多個 分離的但同時的電漿點火或處理事件。因此，電漿觸媒可 定位在一個或多個這些點火或後續的處理位置。 多重位置點火U.S. Patent Application No. 10 /, ^ im I — Yipai (Agent File Number-No. (Agent 1 8 37. 00 1 0), U.S. Patent Application No. ι0 / File No. 183 7 · 001 1), U.S. Patent Application No. 107——, —— (Agent File No. 1837 · 0012), U.S. Patent Application No. 10 / ——, —— No. (Agent file number 1 8 3 7. 00 1 3), U.S. Patent Application No. 1 〇 / -’-- (Agent File Number _ (Agent 1 8 37. 00 1 5), U.S. Patent Application No. ι〇 / File No. 1837. 0016), U.S. Patent Application No. 107 ——, —— (Agent File No. 1 8 3 7 · 0171), U.S. Patent Application No. 10 / ——, — (Agent File No. 1 8 3 7. 00 1 8), US Patent Application No. 10/111-_ (Agent File No. 1 8 3 7. 0020), U.S. Patent Application No. ι〇 / 111, _ (Attorney Dossier No. 1837. 0021), U.S. Patent Application No. 10 / -'- 5 Tiger (Attorney Dossier No. 1 8 3 7 · 〇 023) 'U.S. Patent Application No. 10 /-'-(Attorney Dossier No. 1 8 3 7. 0 024), U.S. Patent Application No. 〇 /-’-(Attorney Docket No. 18: > 7. 0025), U.S. Patent Application No., (Attorney Docket No. 1 8 37. 0 0 2 6), U.S. Patent Application No. 10 / ——, — (Agent File No. 1 8 37. 002 7), U.S. Patent Application No. 10 / ——, —— (Agent File No. 1 8 3 7. 002 8), U.S. Patent Application No. 10 /-, _ Jue (Agent File No. 1837. 0030), U.S. Patent Application No. 10 / ^ _, (Agent Gun No. 1837. 0032) and U.S. Patent Application No. (5) 200417292 10/5 Tiger (Agent File No. 1 8 37. 0 0 3 3). Explaining the Electric Prize System FIG. 1 shows an exemplary plasma system according to aspects of the present invention. In this embodiment, the recess 12 is formed in a container which is positioned in the radiation chamber (i.e., the applicator). In another embodiment (not shown), the container 12 is the same as the radiation chamber 14, thereby avoiding the need for two separate components. The container in which the cavity 12 is formed may include one or more radiation-transmitting insulating layers ' to enhance its thermal insulation properties without significantly shielding the cavity 12 from radiation. In one embodiment, the recess 12 is formed in a container made of ceramic material. Since extremely high temperatures can be achieved in accordance with the present invention, ceramic materials capable of operating at temperatures of 3000 ° F can be used. The ceramic material may include 28.9% by weight of silica, 68.2% of alumina, 0.4% of iron oxide, 1% of titanium dioxide, 0. 1% lime, 0.1% magnesium oxide, 0.1% 4% alkali, this material is sold by New Castle Refractories, New Castle County, Pennsylvania, USA under the model LW-3 0. However, those of ordinary skill in the art will appreciate that other materials, such as quartz, and many other materials than those described above can be used in the present invention. In a successful experiment, the plasma was formed in a partially open cavity, which was located inside a first square and was capped with a second square. The alcove has a size of about 2 inches by about 2 inches by about 1.5 inches. There are also at least two openings in the box to communicate with the alcove ... One of the openings is used to view the plasma, and at least one opening is used to provide gas (6) (6) 200417292. The size of the cavity may depend on the appropriate plasma process to be performed. Furthermore, the cavity should be configured at least to prevent plasma from overflowing / floating out of the main processing area. The alcove 12 is connected to one or more gas sources 24 (e.g., argon, nitrogen, helium, neon, krypton supply sources) through a line 20 and a control valve 22 that can be powered by a power source 28. The tubing 20 may be a tube body (e.g., between about 1/6 inches and about 1/4 inches, such as about 1/8 inches). Revisited ’If necessary, a vacuum pump can be connected to the chamber to remove the fumes generated during the plasma process. In one embodiment, the gas may flow into and / or out of the recess 12 through one or more gaps in a multi-component container. Therefore, the gas orifices in accordance with the present invention do not necessarily need to be specific openings, but may have other types, such as many finely divided openings. A radiation leak detector (not shown) is installed near the supply source 26 and the waveguide 30, and is connected to a safety interlocking system. When a leak is detected above a predetermined safety limit, such as the FCC And / or OSHA (for example, 5m W / cm2), the radiation (for example, microwave) power can be automatically turned off. The radiation source 26, which can be powered by the power supply 28, directs the radiation energy into the radiation chamber 14 via one or more waveguides 30. Those of ordinary skill in the art will understand that the radiation source 26 can be directly connected to the cavity 12, thereby avoiding the waveguide 30. The radiant energy entering the cavity 12 is used to ignite a plasma in the cavity. This plasma can be substantially maintained and confined to the alcove by coupling additional radiation with a catalyst. Furthermore, it is generally believed that the frequency of radiation (e.g., 'microwave radiation') is not important in many applications. -9- (7) (7) 200417292 The radiant energy can be supplied through the circulator 32 and the regulator 34 (for example, a 3-stage regulator). The adjuster 34 can be used to avoid the reflected power as a function of changing the ignition or process conditions, especially after the plasma has been formed because, for example, microwave power is strongly absorbed by the plasma. As will be explained in more detail below, if the chamber 14 supports multiple modes, the radiation-transmissive cavity 12 in the radiation chamber 14 is not important, especially when these modes are continuously or periodically mixed Time. Also as will be explained in more detail below, the motor 36 can be connected to the mode mixer 38 to produce a time-averaged radiant energy distribution that substantially uniformly outputs the chamber 14. Furthermore, a window 40 (for example, a quartz window) may be disposed in a wall of the cavity 14 adjacent to the recess 12 so that a temperature sensor 42 (for example, an optical pyrometer) can be used to observe the recess. Room 1 2 internal process. In one embodiment, the output of the optical pyrometer can increase from zero volts to the tracking range as the temperature rises. The sensor 42 may form an output signal as a function of temperature or any other monitorable condition related to a workpiece (not shown) in the alcove 12 and provide a signal to the controller 44. Dual temperature sensing and heating are also available, as well as automatic cooling rate and airflow control. The controller 4 4 can then be used to control the operation of the power supply 28, which has an output connected to the radiation source 26 and another output connected to the control valve 22 as described above to control the flow of gas into the recess 1 2 . In practice, the present invention can equally successfully use 915 MHz and 2. provided by the Communication and Power Industry (CPI). The 45GHz microwave source, although it can also use any radiation with a frequency less than 3 3 3 GHz. The -10- (8) (8) 200417292 2.4 GHz system is available from about 0.5 watts to about 5. 0 watts of continuously variable microwave power. A 3-segment regulator provides impedance matching for maximum power transmission and a bidirectional coupler is used to measure forward and reflected power. Furthermore, optical pyrometers are used to remotely sense the temperature of a sample. As described above ', the present invention may employ radiation having any frequency less than 3 3 3 G Η ζ. For example, a frequency such as a power line frequency (about 50 Hz to about 60 Hz) may be used, however the pressure of the gas used to form the plasma may need to be reduced to assist ignition. Furthermore, the present invention can also use any radio frequency or microwave frequency, including frequencies greater than 100 kHz. In most cases, the gas pressure used for such higher frequencies does not necessarily have to be lowered to ignite, adjust, or maintain a plasma, thereby enabling many plasma processes to be performed at atmospheric pressure or above. The device is controlled by a computer using LabView 6i software, which provides real-time temperature monitoring and microwave power control. Noise can be reduced by using a moving average of the appropriate number of data points. Furthermore, in order to improve the speed and calculation efficiency, the number of data points stored in the buffer array can be limited by using a shift register and buffer scaling. The pyrometer measures the temperature of the sensing area of about 1 cm2, which is used to calculate an average temperature. The pyrometer senses the intensity of radiation at two wavelengths, and uses Planck's law (P 1 a n c k ′ s 1 a w) to insert these intensities 値 to measure the temperature. However, it should be understood that other devices and methods may be used in the present invention to monitor and control the temperature. The control software system that can be used in the present invention is disclosed in, for example, a US patent application commonly owned by the applicants of this case 1 / _, _ (agent file number 1837. 0033), the full text of the case -11-(9) (9) 200417292 The content is cited as a reference to the case. The chamber M has a plurality of glass-covered viewing openings and radio-shielding shields, and a central window for the entry of a local thermometer. Several orifices useful for connection to a vacuum pump and a gas source are also provided, but this need not necessarily be used. The system 10 also includes a closed-loop deionized water cooling system (not shown), and an external heat exchanger cooled by tap water. During operation ’the deionized water is cooled by the magnetron, then dumped in a circulator (to protect the tube)’ and finally the radiation chamber passes through a water channel welded to the outer surface of the chamber. Plasma catalysts According to one aspect of the present invention, plasma catalysts may include one or more different materials, and may also be active or passive. In addition, electric catalysts can be used to ignite, adjust, and / or maintain a gas pressure that is less than, equal to, or greater than atmospheric pressure. A method of forming a plasma according to the present invention may include exposing a gas in a cavity to electromagnetic radiation in the presence of a passive plasma catalyst, the electromagnetic radiation having a frequency less than about 3 3 3 GHz. The passive plasma catalyst according to the present invention may include any object capable of causing a plasma to be generated by transforming a local electric field (for example, an electromagnetic field) according to the present invention, without the need to add additional catalyst through the catalyst. Energy, such as by supplying a voltage to generate a spark. A passive plasma catalyst according to the present invention may also be a nano particle -12- (10) (10) 200417292 or a nano tube. As used herein, the term "nanoparticles" refers to any particle that has a maximum physical dimension of less than about 100 nanometers and is at least semi-conductive. Furthermore, according to the present invention, single-walled and multi-walled carbon nanotubes, doped or undoped, are particularly suitable for ignition plasmas due to their excellent electrical conductivity and long shape. The nano tube may be of any conventional length and may be a powder fixed to a substrate. If it is a fixed type, the nano tube can be arbitrarily oriented or fixed to the substrate (for example, in a predetermined direction) on the substrate surface when the plasma is ignited or maintained. According to the present invention, a passive plasma catalyst can also be a powder, and does not need to contain nano particles or nano tubes. For example, it may be formed of fibers, dust particles, chips, or flakes. When in powder form, the catalyst can be suspended in the gas at least temporarily. By suspending the powder in the gas, the powder can be quickly spread throughout the cavity and it can be more easily consumed if needed. In one embodiment, the powder catalyst can be carried into the cavity and at least temporarily suspended in a carrier gas. Furthermore, the powder can be added to the gas before being introduced into the cavity. For example, as shown in FIG. 1A, the radiation source 52 may supply radiation to the radiation cavity 55, and a plasma cavity 60 is disposed therein. The powder source 65 supplies the catalyst powder 70 into the gas 75. In another embodiment, the powder 70 may be added to the cavity 60 in a block (e.g., a mass) and then dispersed in the cavity in several ways, including passing a gas through or through the block powder. In addition, the powder can be fed into or fed into the cavity by moving, conveying, dripping, spraying, aspirating or otherwise, and added to the gas to ignite, adjust or maintain a plasma. -13- (11) (11) 200417292 In an experiment, a plasma was ignited in a cavity by placing a carbon fiber powder mass in a copper tube extending into the cavity. Although a sufficient amount of radiation was introduced into the cavity, the copper tube shielded the powder from the radiation and did not cause plasma ignition. However, once the carrier gas begins to flow through the tube body, the powder is forced out of the tube body and into the cavity, whereby the powder can be irradiated, and the plasma can be ignited in the cavity almost instantly. A powder plasma catalyst according to one of the present inventions can be substantially non-combustible, thereby eliminating the need to contain oxygen or burn in the presence of oxygen. In this way, as described above, the catalyst may include a metal, carbon, a carbon-based alloy, a carbon-based composite, a conductive polymer, a conductive silicone rubber, a polymerized nano-composite, an organic-inorganic composite, and Any combination of them. Furthermore, the powder catalyst can be substantially dispersed in the plasma cavity (for example, when suspended in a gas), and the plasma ignition can be accurately controlled in the cavity. Uniform ignition is important in some applications, including those that require a simple plasma explosion, such as one or more explosions. Considering this again, powder catalysts require a specific time to disperse them in a cavity, especially in a complex, multi-chamber cavity. Therefore, according to another aspect of the present invention, the powder catalyst can be introduced into the cavity through a plurality of ignition ports, so that a more uniform catalyst distribution can be obtained more quickly (see below). In addition to powders, for example, a passive plasma catalyst according to the present invention may include, for example, one or more micro or macro-fibers, flakes, needles, fine threads, wire harnesses, qui Flakes, chips, fabric 'tapes, filaments, or any combination thereof. In these examples, the plasma catalyst may have at least a portion, and the physical size of the portion may be substantially larger than the other physical dimensions -14-(12) (12) 200417292. For example, the ratio between at least two orthogonal dimensions should be at least about 1: 2, but it can also be greater than about 1: 5 or even greater than about 1:10. Therefore, a passive plasma catalyst may include at least one material portion that is relatively thin compared to its length. A bundle of catalysts (eg, fibers) can also be used, and for example can include segments of a graphite strip. In an experiment, a segment having approximately 30,000 bundles of graphite fibers (each bundle having a diameter of about 2-3 microns) was successfully used. The number of fibers and the length of the bundle are not important for igniting, adjusting or maintaining the plasma. For example, using a quarter-inch graphite strip segment can give satisfactory results. According to the present invention, a carbon fiber can be successfully used, which is a product of model AS4C-GP3K sold by Hexcel Company of Anderson, South Carolina, under the trademark of Magnamite®. Furthermore, silicon-carbon fibers have been successfully used. A passive plasma catalyst according to another aspect of the present invention may include one or more parts, which may be, for example, approximately spherical, annular, pyramidal, cubic, flat, cylindrical, rectangular, or long. shape. The disclosed passive plasma catalyst includes at least one material, and the material is at least a semi-conductive material. In one embodiment, the material may have high conductivity. For example, the passive plasma catalyst according to the present invention may include metals, inorganic materials, carbon, carbon-based alloys, carbon-based composites, conductive polymers' conductive silicone rubber, polymerized nano-composites, Organic-inorganic complex alpha or any combination thereof. Some useful inorganic materials that can be included in the plasma catalyst include carbon, silicon carbide, molybdenum, platinum, tungsten, carbon nitride, and aluminum, although other conductive inorganic materials are generally believed to have good efficacy. -15- (13) (13) 200417292 In addition to one or more conductive materials, a passive type plasma catalyst according to the present invention may include one or more additives (which need not necessarily be conductive). The term additive as used herein may include any material that the user desires to add to the plasma. For example, when doping semiconductors or other materials, one or more dopants may be added via a catalyst. For example, refer to US Patent Application No. 10 / _, _, which is jointly owned by the applicants of this case and filed at the same time (Attorney Docket No. 1837. 0026), the full text of the case is incorporated by reference. The catalyst may include the dopant itself, or it may include a pre-formed material which, after being decomposed, may form a dopant. Therefore, the plasma catalyst may include one or more additives and one or more conductive materials in any desired ratio, depending on the final desired plasma composition and the process using the plasma. The ratio of the conductive component to the additive in the passive plasma catalyst will change over time while being consumed. For example, during ignition, the plasma catalyst may need to include a larger proportion of conductive components to improve the ignition state. On the other hand, if used while maintaining the plasma, the catalyst may include a larger proportion of additives. Those with ordinary knowledge of this technique should be able to understand that the proportions of the components of the plasma catalyst used to ignite and maintain the plasma can be the same. A preset ratio profile can be used to simplify many plasma processes. In many conventional plasma processes, the ingredients in the plasma can be added as needed, but such additions usually require programmable equipment to add strength in accordance with a predetermined schedule. . However, according to the present invention, the component ratio in the catalyst can be changed, so that the component ratio in the plasma itself can be automatically changed. In other words, at any given time, 16- (14) (14) 200417292, the ratio of the constituents in the plasma may depend on which part of the catalyst is now being consumed by the plasma. Therefore, the ratio of the catalyst components in different parts of the catalyst may be different. And, the current component ratio in a plasma may depend on that part of the catalyst and / or the previously consumed portion, especially when the flow rate of a gas passing through the plasma chamber is slow. A passive plasma catalyst according to the present invention may be homogeneous, heterogeneous or graded. Furthermore, the plasma catalyst component ratio can be changed continuously or discontinuously throughout the catalyst. For example, in Figure 2, the ratio can be changed gently to form a gradient along the length of the catalyst 100. The catalyst 100 may include a bundle of material that includes a lower concentration component in the segment 105 and a continuously increasing concentration toward the segment 110. Alternatively, as shown in FIG. 3, the ratio may be discontinuously changed in each of the catalysts 120, which includes, for example, interlaced portions 1 2 5 and 1 3 0 having different concentrations. It should be understood that the catalyst 1 2 0 may have more than two partial types. Therefore, the ratio of the catalyst component consumed by the plasma can be changed in any predetermined pattern. In one embodiment, when the plasma is monitored and a specific additive is detected, further processing can be automatically started or ended. Another method of changing the composition ratio in a maintenance plasma is to introduce multiple catalysts with different composition ratios at different times or at different ratios. For example, a variety of catalysts can be introduced into approximately the same or different locations in the cavity. When introducing different parts, the plasma formed in the cavity may have a component concentration gradient determined by different catalyst parts. Thus, an automated system may include a device whereby mechanically placed consumable plasma catalysts are used before and / or during ignition, adjustment and / or maintenance of the plasma. -17- (15) (15) 200417292 A passive plasma catalyst according to the present invention can also be coated. In one embodiment 'a catalyst may include a substantially non-conductive coating deposited on a surface of a substantially conductive material. Alternatively, the catalyst may include a substantially conductive coating deposited on a surface of a substantially non-conductive material. For example, Figures 4 and 5 show fibers 14o, which include a bottom layer 145 and a coating 150. In one embodiment, a plasma catalyst includes a nickel-coated carbon core to prevent carbon oxidation. A single plasma catalyst may also include multiple coatings. If the coating is consumed during contact with the catalyst, the coating can be sequentially introduced into the catalyst from the outer coating to the innermost coating, thereby generating a time release mechanism . Therefore, a coated plasma catalyst can include any number of materials as long as a portion of the catalyst is at least semi-conductive. According to another embodiment of the present invention, a plasma catalyst system is integrally positioned in a radiation cavity to substantially reduce or prevent radiation energy leakage. In this manner, the plasma catalyst will not be electrically or magnetically coupled to the container accommodating the cavity or to any conductive object outside the cavity. This prevents sparks from occurring in the ignition hole and, if the plasma is maintained, it prevents radiation from leaking out of the recess during ignition or later. In one embodiment, the catalyst may be positioned at the tip of a substantially non-conductive extension extending through an ignition hole. For example, Fig. 6 shows a radiation chamber 160 in which a plasma cavity 165 is disposed. The plasma catalyst 17 is elongated and extends through the ignition hole 175. As shown in FIG. 7, according to the present invention, the catalyst 1 70 may include a conductive distal portion 180 (which is placed in the chamber 160) and a non-conductive portion 185 (which is larger than -18- (16) 200417292) Outside the chamber 160). This configuration may be electrically connected between the 180 and the chamber 160 (for example, in another embodiment, as shown in FIG. 8, the conductive section 190 is formed, where the section sections are In the space separated by 195 and mechanically similar to the example, the catalyst can extend through the ignition hole between a point located outside the recess, but it should greatly prevent sparks and energy leakage. The gas in another cavity forming a catalyst of the present invention can generate or include at least one ionized particle when irradiated with electromagnetic radiation having an active plasma catalyst having a frequency of less than about 3 3 3 GHz. One of the active plasma catalysts may be wave-packaging, which can give a gaseous atom or molecule in the presence of electromagnetic radiation, and self-gaseous electrons. Depending on the supply source, the type of ionized particles can be introduced to In the alcove, they can be introduced by other methods. For example, FIG. 9 shows a radiation source 2 0 0 that can introduce radiation. The plasma alcove 2 1 0 is positioned to allow an airflow to pass through the orifice 2 1 5 and 2 1 6 and 220 introduce ionized particles 225 to Chamber 210 to be source 220 may be protected by a metal mesh, by granulation, but the supply source 220 may be shielded to prevent exposure in transit _ sparking portion). The catalyst may be connected by a plurality of systems and by a plurality of non-conductive systems. A method for carrying out the point inside the alcove and an electrically discontinuous shape in this method may include subjecting a bit to a device under conditions, wherein the plasma catalyst thinks that any particle or a high amount of particles or molecules is transported in a sufficient amount. Remove at least one polymerized or collimated beam that is sprayed, sprayed, sprayed, or inside the chamber 205 in the radiation chamber 205 and flows through it. Supply source. For example, it allows ionization. If needed, supply -19- (17) (17) 200417292 source 220 can be water cooled. Examples of ionized particles according to the present invention include X-ray particles, gamma (m a m a) particles, alpha (a 1 p h a) particles, beta particles, neutrons, protons, and any combination thereof. Therefore, an ionized particulate catalyst can be charged (for example, ions from an ion supply source) or uncharged, and can be the product of a radioactive fission reaction. In one embodiment, the container in which the plasma cavity is formed may penetrate completely or partially to the ionized particle catalyst. Therefore, when a radioactive nuclear fission source is positioned outside the recess, the supply source can direct the fission product through the container to ignite the plasma. Radioactive nuclear fission sources can be positioned inside the radiation chamber to substantially prevent safety hazards from the fission products (ie, ionized particle catalysts). In another embodiment, the ionized particle may be a free electron, but it does not have to be emitted in a radioactive decay reaction. For example, the electrons can be introduced into the cavity by energizing the electron source, such as a metal, so that electrons with sufficient energy can be released from the supply source. The electron source can be positioned inside the alcove, adjacent to the alcove, or even in the wall of the alcove. It should be apparent to those having ordinary knowledge of this technique that the present invention may also employ any combination of electronic supply sources. One method commonly used to generate electrons is to heat a metal, and these electrons can be further accelerated by supplying an electric field. In addition to electrons, free energy protons can also be used to trigger a plasma. In one embodiment, a free proton can be generated by dissociating hydrogen, and if necessary, can be accelerated by an electric field. One of the advantages of the active and passive catalysts according to the present invention is that its -20-(18) (18) 200417292 can trigger a plasma in a substantially continuous manner. For example, an ignition device can trigger a plasma only when a spark is present. However, a spark is usually generated by supplying a voltage across both electrodes. Generally speaking, sparks are generated periodically and separated by periods where sparks are not generated. During these non-ignition cycles, a plasma will not be triggered. Furthermore, for example, an ignition device usually requires electrical energy to operate, but the active and passive plasma catalysts according to the present invention do not require electrical energy to operate. Multimode Radiation Cavity A radiation waveguide, cavity or cavity can be designed to support or facilitate the propagation of at least one electromagnetic radiation mode. As used herein, the term "mode" refers to any particular pattern of fixed or propagating electromagnetic waves that satisfies Maxwell's equation and enforceable boundary conditions (for example, the boundary conditions of an alcove). In a waveguide or an alcove This mode can be any of various feasible modes of propagating or fixing the electromagnetic field. Each mode is characterized by the frequency and polarity of the electric field and / or the magnetic field vector. The mode of the electromagnetic field of a mode depends on the frequency, refractive index or dielectric constant, and Waveguide or cavity geometry. A transverse electric field (TE) mode is a mode whose electric field vector is perpendicular to the direction of propagation. Similarly, a transverse magnetic field (TM) mode is a mode whose magnetic field vector is perpendicular to the direction of propagation. A transverse electric and magnetic field (TEM) mode is a mode in which the electric and magnetic field vectors are perpendicular to the direction of propagation. A hollow metal waveguide usually does not support a vertical TEM mode in which radiation propagates. Even if radiation occurs and moves along the length of the waveguide, its It can only be reflected off the inner wall of the waveguide at certain angles. However, this radiation depends on the propagation mode -21-(19) (19) 200417292 (eg 'microwaves') may have certain electric field components or certain magnetic field components along the axis of the waveguide (commonly referred to as the Z axis). Actual inside a cavity or waveguide The field distribution is the overlap of internal modes. Each mode can be mistaken by one or more subscript symbols (for example, TE! Q ("tee ee one zero"). The subscript symbols are usually listed at the waveguide wavelength at χ How many, half-waves are included in the y direction? Those who are familiar with this technology should understand that the waveguide wavelength is different from the free-space wavelength because the radiation propagation inside the waveguide is reflected by the inner wall of the waveguide at an angle. In some examples, a third subscript symbol can be added to define how many vertical wave modes are along the z-axis. For a given radiation frequency, the size of the waveguide can be selected to be small enough to make It supports a single propagation mode. In this example, the system can be referred to as a single mode system (ie, a single mode applicator). In a rectangular single mode waveguide, the TE mode is usually the majority. With the waveguide (Or connected by the waveguide With the increase in size of the cavity, the waveguide or applicator can sometimes support additional higher-order modes that make up a multi-mode system. When many modes are supported at the same time, the system can often be referred to as higher-order modeization. A simple 1. A single-mode system has a field distribution, which includes at least one maximum and / or minimum radon. A maximum radon depends mainly on the amount of radiation supplied to the system. Therefore, the field distribution of a single mode can vary drastically and be roughly uneven. Unlike a single-mode alcove, a multi-mode alcove can support several propagation modes at the same time. When these modes overlap, it will cause a complex field analysis. -22- (20) (20) 200417292 Cloth pattern In this style, the fields tend to be spatially blurred, and therefore the field distribution usually does not show the same type of minimum and maximum fields in the alcove. In addition, as will be explained more fully below, a mode mixer can be used in "excitation" or "redistribution" mode (for example, by mechanical movement of a radiation reflector). This redistribution suitably provides a more uniform time-averaged field redistribution in the alcove. A multi-mode alcove according to one of the present invention can support at least two modes and can support more than two modes. Each mode has a large electric field vector. Although there can be two or more modes, one mode is the main mode and has the largest electric field vector 値 larger than the other mode. As used herein, a multi-mode recess can be any recess, where the ratio between the first and second mode amounts 小于 is less than about 1: 1, or less than about 1: 5, or even less than about 1: 2. Those with ordinary knowledge of this technique should understand that the smaller the ratio, the more the electric field energy between multiple modes will be distributed, and the more the radiant energy will be distributed in the cavity. The plasma distribution in a processing chamber may depend primarily on the distribution of the supplied radiation. For example, in a purely single mode system, the electric field with only a single location may be the largest chirp. Therefore, a powerful plasma can only be formed at this single location. In many applications, this powerful local plasma can inappropriately cause uneven plasma treatment or heating (ie, local overheating and insufficient heating). According to the present invention, regardless of whether a single or multiple mode cavity is used, those having ordinary knowledge of the art should understand that the cavity in which the plasma is formed may be completely closed or partially opened. For example, in some applications, -23-(21) (21) 200417292, such as an electric-assisted boiler, the cavity may be completely enclosed. For example, refer to US Patent Application No. 10 / ——,-, which is jointly owned by the applicants of this case and filed at the same time (Attorney Docket No. 1837. 0020), the full text of the case is incorporated by reference. However, in other applications, we may want gas to flow through the cavity, and therefore the cavity must be opened to a certain degree. In this way, the flow rate, type, and pressure of the flowing gas can change over time. This may be quite appropriate, as certain gases can promote plasma formation, such as argon, which is easier to ignite, but cannot be needed during subsequent plasma processing. Mode mixing For many applications, we need an alcove with a uniform electricity prize. However, since microwave radiation may have a longer wavelength (for example, a few tenths of a centimeter), it may be difficult to achieve a uniform distribution. Therefore, according to the state of the present invention, the radiation patterns in the multi-mode cavity can be mixed or redistributed after a period of time. Since the field distribution in the alcove must satisfy all the boundary conditions set by the surface of the alcove (if metal), these field distributions can be changed by changing the position of any part of the inner surface. In one embodiment according to the present invention, a movable reflective surface may be positioned inside the radiation cavity. When combined, the shape and movement of the reflective surface changes the inner surface of the cavity during movement. For example, when rotated about any axis, an "L" shaped metal object (ie, a "mode mixer") will change the position or orientation of the reflective surface in the alcove, and thus change its spokes-24- ( 22) (22) 200417292 shot distribution. Any other asymmetrically shaped object can also be used (when rotated) 'but symmetrically shaped objects can also be effective, as long as relative motion (such as rotation, translation, or a combination of both) will affect the position or orientation of the reflective surface Just make some changes. In one embodiment, a mode mixer may be a cylinder, which may rotate about an axis other than the longitudinal axis of the cylinder. Each of the multiple modes has at least one maximum electric field vector, but these vectors can occur periodically throughout the internal dimensions of the cavity. Usually these 'maximum chirps' are fixed, assuming that the frequency of the radiation does not change. However, by moving a mode mixer to interact with the radiation, we can move the position of the maximum chirp. For example, the mode mixer 38 can be used to optimize the field distribution in the alcove 14 to optimize plasma ignition conditions and / or plasma maintenance conditions. Therefore, once the plasma is excited, for a uniform time averaging plasma process (e.g., heating), the position of the mode mixer can be changed to move the position of the maximum chirp. Therefore, according to the present invention, mode mixing can be used during plasma ignition. For example, 'When using a conductive fiber as a plasma catalyst, we have known that the orientation of the fiber will greatly affect the minimum plasma ignition conditions. For example, it has been reported that when the fiber is positioned at an angle greater than 60 with respect to the electric field, the catalyst hardly enhances or removes these conditions. However, 'whether by moving the reflective surface in or near the cavity, the electric field distribution will change greatly. Radiation can be emitted into the applicator chamber by, for example, a rotating waveguide connector that can be mounted inside the applicator chamber. Mode mixing can also be achieved -25- (23) (23) 200417292. The swivel joint can be mechanically moved (eg, turned) to efficiently radiate radiation into the radiation chamber in different directions. Therefore, a changed field pattern can be created in the applicator chamber. Mode mixing can also be achieved by putting radiation into the radiation chamber through a flexible waveguide. In one embodiment, the waveguide may be mounted inside a cavity. In another embodiment, the waveguide can extend into the cavity. The position of the ends of the flexible waveguide can be continuously or periodically moved (eg, bent) in any suitable manner to direct radiation (eg, microwaves) into the cavity in different directions and / or locations. This movement can also cause mode mixing and promote more uniform time-averaged plasma processing (such as heating). Alternatively, for ignition or other plasma-assisted processes, this movement can be used to optimize the position of a generator. If the flexible waveguide is rectangular, simple twisting of the open end of the waveguide can rotate the orientation of the electric field and magnetic field vector in the radiation inside the applicator chamber. Periodic twisting of one of the waveguides can then produce mode mixing and rotating electric fields, which can be used to aid ignition, adjust, or maintain a plasma. Therefore, even if the initial orientation of the catalyst is perpendicular to the electric field, the reorientation of the electric field vector can change the invalid orientation to a more effective orientation. Those skilled in the art should know that the mode mixing can be continuous, periodic or pre-programmed. In addition to plasma ignition, mode mixing can also be used during subsequent plasma processing to reduce or create (eg, adjust) hot spots in the chamber. When a microwave cavity supports only a small number of modes (for example, less than 5), one or more localized minefields can cause "hot spots", (for example, in the cavity 1 2) -26- (24) 200417292. In one embodiment, these hot spots can be configured to conform to one or more separate but simultaneous plasma ignition or processing events. Therefore, the plasma catalyst can be positioned at one or more of these ignitions or subsequent Multi-position ignition
一電漿可以利用多個電漿觸媒在不同位置上來點火。 在一實施例中，多個纖維可用以在凹室中之不同位置來點 火電漿。當有需要一均勻的電漿點火時，此類多重位置點 火係特別有利的。例如，當一電漿在高頻（亦即，數十赫 茲及更高）被調整時，或者以一較大體積被點火時，或者 兩者同時存在時，可以實質增進均勻的瞬間點火或重新點 火。或者，當電漿觸媒在多個位置點使用時，其可藉由在 不同位置點選擇性導入觸媒而在電漿腔室中之不同位置處 依序點火一電漿。在此方式中，若有需要，可在凹室中控 制式地形成一電漿點火梯度。A plasma can use multiple plasma catalysts to ignite at different positions. In one embodiment, multiple fibers can be used to ignite the plasma at different locations in the cavity. Such multiple position ignition systems are particularly advantageous when a uniform plasma ignition is required. For example, when a plasma is adjusted at high frequencies (ie, tens of hertz and higher), or when it is ignited with a larger volume, or when both are present, it can substantially enhance uniform instantaneous ignition or re-ignition. ignition. Alternatively, when the plasma catalyst is used at multiple locations, it can sequentially ignite a plasma at different locations in the plasma chamber by selectively introducing the catalyst at different locations. In this way, if necessary, a plasma ignition gradient can be controlledly formed in the alcove.
再者，在一多重模式凹室中，在凹室中之整個多重位 置的觸媒任意分佈會增加至少一纖維或依照本發明之任何 其他被動型電漿觸媒由電場線最佳化地定向。再者，即使 在觸媒並非爲最佳化定向的情況（大致未與電場線對準）， 仍可以增進點火條件。 此外，由於一觸媒粉末可懸浮在一氣體中，吾人相信 每一粉末顆粒可具有被放置在凹室中之不同實體位置的效 果，藉此增進凹室中之點火均勻性。 -27- (25) (25)200417292 雙凹室電漿點火/維持 依照本發明，一種雙凹室配置可用以點火及維持一電 漿。在一實施例中，一系統包括至少一第一點火凹室及一 與該第一凹室流體連通之第二凹室。爲了點火一電漿，視 一電漿觸媒存在與否，在第一點火凹室中之氣體可受到具 有小於約3 3 3 GHz之頻率的電磁輻射所照射。以此方式， 第一及第二凹室的靠近可允許形成在第一凹室中之電漿點 火第二凹室中之電漿，其中該第二凹室中之電漿可由一另 外的電磁輻射所維持。 在本發明之一實施例中，第一凹室可以極小且主要或 僅設計成用於電漿點火。在此方式中，可能僅需要極小的 微波能量來點火該電漿，且可以更容易點火，尤其當使用 依照本發明之電漿觸媒時。 在一實施例中，第一凹室可大致爲一單一模式凹室， 而第二凹室爲一多重模式凹室。當第一點火凹室僅支援一 單一模式時，在凹室中之電場分佈可以有極大的變化，以 形成一個或多個精確定位的電場最大値。此等最大値通常 爲電發點火所在之第一位置，因此這些是放置電漿觸媒的 理想位置點。然而，應瞭解，當使用一電漿觸媒時，其並 不一定要放置在電場最大値處，且在許多例子中，其並不 需要定向在任何特定方向。 在前述實施例中，爲了流暢地闡述本發明，在單一實 施例中可以結合各種特徵。此一闡述方法不應解釋爲在此 主張之本發明需要具有多於陳述在每一申請項中之特徵的 -28- (26) 200417292 意圖。相反地，如以下申請專利範圍所述，本發明之特徵 少於上述單一實施例之所有特徵。因此，以下之申請專利 範圍倂入此一實施例之詳細說明的段落中，且每一申請項 可各自爲本發明之一獨AL的較佳實施例。 [圖式簡單說明】Furthermore, in a multi-mode alcove, the arbitrary distribution of catalysts throughout the multiple positions in the alcove will add at least one fiber or any other passive plasma catalyst according to the present invention optimized by the electric field lines. Directional. Furthermore, even when the catalyst is not optimally oriented (roughly misaligned with the electric field lines), the ignition conditions can be improved. In addition, since a catalyst powder can be suspended in a gas, we believe that each powder particle can have the effect of being placed in different physical locations in the cavity, thereby improving the uniformity of ignition in the cavity. -27- (25) (25) 200417292 Dual-cavity plasma ignition / maintenance According to the present invention, a dual-cavity configuration can be used to ignite and maintain a plasma. In one embodiment, a system includes at least a first ignition cavity and a second cavity in fluid communication with the first cavity. In order to ignite a plasma, depending on the presence or absence of a plasma catalyst, the gas in the first ignition cavity may be irradiated with electromagnetic radiation having a frequency of less than about 33 GHz. In this way, the proximity of the first and second recesses may allow the plasma formed in the first recess to ignite the plasma in the second recess, wherein the plasma in the second recess may be subjected to an additional electromagnetic Radiation is maintained. In one embodiment of the invention, the first cavity can be extremely small and designed primarily or only for plasma ignition. In this way, only a very small amount of microwave energy may be needed to ignite the plasma, and it may be easier to ignite, especially when using a plasma catalyst according to the present invention. In one embodiment, the first cavity may be a single-mode cavity, and the second cavity is a multi-mode cavity. When the first ignition cavity only supports a single mode, the electric field distribution in the cavity can be greatly changed to form one or more precisely positioned electric field maxima. These largest plutoniums are usually the first positions where the electric ignition occurs, so these are the ideal locations for placing the plasma catalyst. However, it should be understood that when a plasma catalyst is used, it does not have to be placed where the electric field is the largest, and in many cases it does not need to be oriented in any particular direction. In the foregoing embodiments, in order to explain the present invention smoothly, various features may be combined in a single embodiment. This method of illustration should not be construed as claiming that the invention claimed herein requires more than -28- (26) 200417292 intent as stated in each application. In contrast, as described in the scope of the following patent applications, the features of the present invention are less than all the features of the single embodiment described above. Therefore, the scope of the following patent application is incorporated into the detailed description of this embodiment, and each application item can be a preferred embodiment of a unique AL of the present invention. [Schematic description]
由以上之詳細說明並配合後附之圖式，將可瞭解本發 明之進一步特徵，其中在諸圖式中，相同之元件符號係表 示相同之部件，且其中： 圖1顯示依照本發明之一示例性電漿系統之槪要示意 圖1 A顯示依照本發明用以添加一粉末電漿觸媒至一 電漿凹室中以點火、調整或維持在一凹室中之電漿之電漿 系統之一部分的示例性實施例；From the above detailed description and the accompanying drawings, further features of the present invention will be understood. In the drawings, the same element symbols represent the same components, and among them: FIG. 1 shows one of the invention according to the present invention. Schematic diagram of an exemplary plasma system 1 A shows a plasma system for adding a powder plasma catalyst to a plasma cavity in accordance with the present invention to ignite, adjust, or maintain the plasma in a cavity. Part of an exemplary embodiment;
圖2顯示依照本發明具有至少一成分之示例性電漿觸 媒纖維’該成分沿其長度上具有一濃度梯度； 圖3顯示依照本發明具有多重成分之示例性電漿觸媒 纖維，其中該成分之比率係沿其長度而有所變化； 圖4顯示依照本發明之另一示例性電漿觸媒纖維，該 纖維包括一核心內層及一塗覆物； 圖5顯示沿著圖4之剖面線5 - 5所取之依照本發明電 漿觸媒纖維之一截面視圖； 圖6威不依照本發明之一電漿系統之另一部分的示例 性實施例，其中該電漿系統包括一延伸通過點火孔之長形 -29- (27) (27)200417292 電漿觸媒； 圖7顯示依照本發明可用於圖6之系統中之長形電漿 觸媒之示例性實施例； 圖8顯示依照本發明可用於圖6之系統中之長形電漿 觸媒之另一示例性實施例；及 圖9顯示依照本發明用以將輻射導引至一輻射腔室之 電漿系統之一部分的示例性實施例。 元件符號對照表 10 電漿系統 12 凹室 14 輻射腔室 20 管路 22 控制閥 24 氣體源 26 輻射源 28 電源供應器 30 波導 32 循環器 34 調整器 36 馬達 38 模式混合器 40 窗口 42 溫度感應器 -30· (28)200417292 44 控 制 器 52 輻 射 源 55 輻 射 凹 室 60 電 漿 凹 室 65 粉 末 源 70 觸 媒 粉 末 75 氣 流 100 觸 媒 1 05 片 段 110 片 段 120 /ytrp 觸 媒 125 片 段 13 0 片 段 140 纖 維 145 底 層 1 50 塗 覆 物 160 輻 射 腔 室 165 電 漿 凹 室 1 70 電 漿 觸 媒 1 75 點 火 孔 1 80 導 電 性 遠 士山 部 1 85 非 導 電 性 部 分 1 90 導 電 性 區 段 1 95 非 導 電 性 1E 段 -31 (29) 200417292 200 輻 射 源 205 輻 射 腔 室 2 10 電 漿 凹 室 2 15 孔 □ 2 16 孔 □ 220 供 應 源 225 離 子 化 顆粒FIG. 2 shows an exemplary plasma catalyst fiber having at least one component according to the present invention, the component has a concentration gradient along its length; FIG. 3 shows an exemplary plasma catalyst fiber having multiple components according to the present invention, wherein the The ratio of the components varies along its length; FIG. 4 shows another exemplary plasma catalyst fiber according to the present invention, which fiber includes a core inner layer and a coating; FIG. 5 shows A cross-sectional view of a plasma catalyst fiber according to the present invention taken along section lines 5-5; FIG. 6 is an exemplary embodiment of another part of a plasma system according to the present invention, wherein the plasma system includes an extension Long -29- (27) (27) 200417292 plasma catalyst through ignition hole; Figure 7 shows an exemplary embodiment of a long plasma catalyst that can be used in the system of Figure 6 according to the present invention; Figure 8 shows Another exemplary embodiment of a long plasma catalyst that can be used in the system of FIG. 6 according to the present invention; and FIG. 9 shows a portion of a plasma system for directing radiation to a radiation chamber according to the present invention. Exemplary embodiment. Component symbol comparison table 10 Plasma system 12 Cavity 14 Radiation chamber 20 Pipe 22 Control valve 24 Gas source 26 Radiation source 28 Power supply 30 Wave guide 32 Circulator 34 Regulator 36 Motor 38 Mode mixer 40 Window 42 Temperature sensor Device-30 · (28) 200417292 44 controller 52 radiation source 55 radiation cavity 60 plasma cavity 65 powder source 70 catalyst powder 75 air flow 100 catalyst 1 05 fragment 110 fragment 120 / ytrp catalyst 125 fragment 13 0 fragment 140 Fiber 145 Bottom layer 1 50 Coating 160 Radiation chamber 165 Plasma alcove 1 70 Plasma catalyst 1 75 Ignition hole 1 80 Conductive distant hill 1 85 Non-conductive part 1 90 Conductive section 1 95 Non-conductive 1E segment-31 (29) 200417292 200 Radiation source 205 Radiation chamber 2 10 Plasma cavity 2 15 holes □ 2 16 holes □ 220 Supply source 225 Ionized particles