200413737 玖、發明說明： 【發明所屬之技術領域】 本♦明係、_於一種電性泪j量在任i離子束處理位置的離 子束射I，檢測該離子束角度分佈等的離子束分佈檢測 裝置及使用其之離子束配向處理裝置。 【先前技術】 舀决使用離子摻雜裝置或離子束濺射裝置等離子束照射 置在基板等被處理面照射離子束時，此被處理面的離 子束…、射里可用具有法拉第杯（Farady Cup)的射束測量裝 置進行電性測量（例如參考專利文獻丨）。 此外，也有一種射束輪廓監測器（beam profile monitor)， 其具有在互相X叉的二軸方向分別各配置複數個線狀電極 的監測頭，檢測與帶電粒子（離子粒子）捕獲數對應的該線 狀電極的電位變化，可檢測出和離子束進行方向正交的平 面上的帶電粒子分佈（例如參考專利文獻2)。 [專利文獻1] 特開2000-311867號公報（第3-5頁、第1圖） [專利文獻2] 特開2001-243902號公報（第3-6頁、第1圖） [發明所欲解決之問題] 近幾年低耗電化、輕量、薄型化、液晶彩色顯示高性能 化等開發更先進的液晶顯示II，係作為平面顯示器技術成 長的指標，而應用於個人電腦<从機器等資訊用顯示裝置 正在急速擴大其用途。如此，對於構成液晶顯示器的液晶 856l6.doc 200413737 顯示元件的要求須具備更高高功能化、高性能化。 此處，液晶顯示元件具有下述構造：使依次形成透明電 極、配向膜的玻璃基板如配向膜成為内側般地相對，在這 些玻璃基板之間形成液晶層；並且如與配向膜直接接觸般 地構成此液晶層内部的液晶分子。 此外，為了達成此液晶顯示元件再高功能化、高性能化， 需要盡量均句控制液晶顯示元件的液晶分子配向，控制此 液晶分子配向性的配向膜的液晶配向處理極為重要。 開發一種方法（離子束配向法）作為此液晶配向處理的方 法：照射離子束到液晶顯示元件的配向膜，使其原子構造 排列於所希望的方向；如此而產生下述必要性：不僅要檢 測此配向膜照射面的離子束照射量，而且也要檢測出此離 子束的角度分佈。 然而’上述專利文獻丨所載的具有測量裝置等的法拉第杯 的習知射束測量裝置在不與此離子束角度分佈對應的狀態 測τ與照射到任意離子束處理位置的離子束量對應的射束 私⑽所以難以檢測出構成液晶顯示元件的配向膜照射面 的離子束角度分佈。 例如對於具有10個圖9所示的法拉第杯51的習知射束測 T裝置50 ’按照一樣的方位角w參考圖90))或任意的方位 角Φ (參考圖9(b))分別照射具有同一束量分佈的兩種離子束 或離子束2 Id的情況，由射束測量裝置5()所測量的離子 束21c及離子束叫的各束量分佈，雖然雙方的角度分佈不 同’但是呈現同一分佈。 85616.doc 200413737 /此，習知射束測量裝置50難以檢測^射到液晶顯示 兀件的配向膜的任意位置的離子束角度分佈，在進行上述 離子束配向法的液晶配向處理之前，難以檢測在此離子束 平均方向的方位角零散分佈（發散），所以難以均勻控制上述 離子束配向法的液晶配向，同時會使液晶配向處理的作業 性降低，甚至有使液晶顯示元件生產效率降低的問題點。 另方面，即使使用上述專利文獻2所載的射束輪廓監測 器的情況，A難以檢測出照射到任意離子束處理位置的離 子束角度分佈，不足以解決上述問題點。 本發明係鑑於上述問題點所完成的，其目的在於提供一 種電性測量照射到任意離子束處理位置的離子束照射量， 以此測量結果為基礎，檢測此離子束發散的離子束分佈檢 測裝置及使用其之離子束配向處理裝置。 【發明内容】 為了達成上述目的，關於申請專利範圍第丨項的離子束分 佈&測裝置’其特徵在^:係電性檢測照射到所希望被處 理面的離子束帶電粒子分佈，具備屏蔽機構：錢斷前述 離子束的壁面設有使前述離子束通過的開口部；複數個捕 獲機構：#獲通過前述遮蔽機#開口㈣前述離子束；及 測量機構：和前述捕獲機構電性連接，測量在前述捕獲機 構產生的電流者。 藉由此申請專利範圍第1項之發明，屏蔽機構從設於遮斷 離子束的I面的狹縫等開口部4吏離子束通過，i數個捕獲 機構捕獲通過前述開口部的離子束，測量機構測量與前述 85616.doc 200413737 複數個捕獲機構所捕獲的離子束帶電粒子量對應的電流， 可檢測出與照射到所希望被處理面的離子束角度分佈對應 的電流分佈。 此外，關於申請專利範圍第2項的離子束分佈檢測裝置在 上述發明，其特徵在於··具備運算處理機構··以與前述測 里機構的測量結果對應的前述離子束電流分佈為基礎，至 少進行基於高斯（Gauss)法的反褶合積分的運算處理，檢測 前述離子束的角度分体者。 、、藉由此申請專利範圍第2項之發明，運算處理機構以與前 j測量機構的測量結果對應的前述離子束電流分佈為基 ，，至少進行基於高斯法的反褶合積分的運算處理，可確 貝&測出前述離子束的角度分佈。 •卜關於申μ專利範圍第3項的離子束分佈檢測裝置在 上士發明’其特徵在於：前述捕獲機構配置成一排者。 斗b申明專利範圍第3項之發明，將前述複數個捕獲機 構配置成-排，對於一軸方向可容易且高精度檢測出照射 到所希望被處理面的離子束角度分佈。 關於申μ專利範圍第4項的離子束分佈檢測裝置在 上錢明，其特徵在於：前述捕獲機構平面配置者。 :由此中請專利範圍第4項之發明，將前述複數個捕獲機 所香Γ配置，對於二轴方向可容易且高精度檢測出照射到 主被處理面的離子束角度分佈。 此外，關於申請專利範圍第5項的離子束分佈檢測裝置在 上述發明’其特徵在於：前述開口部的中心軸和與形成前 85616.doc 200413737 述複數個捕獲機構的離子束捕獲面正交的中心軸為同一軸 者。 藉由此申請專利範圍第5項之發明，前述屏蔽機構被配置 則述開口邵，其具有與前述複數個捕獲機構所形成的離子 束捕獲面正交的中心軸同一中心軸，使由前述運算處理機 構所檢測出的前述離子束角度分佈成為最佳形狀。 此外，關於申請專利範圍第6項的離子束分佈檢測裝置在 上述發明，其特徵在於：前述複數個捕獲機構的配置數為 奇數者。 藉由此申請專利範圍第6項之發明，前述複數個捕獲機構 的配置數成為奇數，可高精度導出由前述運算處理機構所 檢測出的前述離子束角度分佈的極大值。 此外，關於申請專利範圍第7項的離子束配向處理裝置， 其特徵在於··具備申請專利範圍第丨至6項中任一項所載之 離子束分佈檢測裝置者。 藉由此申請專利範圍第7項之發明，由於具備申請專利範 圍第1至6項中任一項所載之離子束分佈檢測裝置，所以得 到申請專利範圍第1至6項的作用效果。 【實施方式】 以下參考附圖，詳細說明關於本發明的離子束分佈檢測 裝置的較佳實施例。 (第一實施例） 首先，就本發明第一實施例的離子束分佈檢測裝置的結 構加以詳細說明。圖1為本發明第一實施例的離子束分佈檢 85616.doc 200413737 測裝置結構的簡圖。在圖丨，離子束分佈檢測裝置丨具有將 15個法拉第杯（Farady Cup)2〇1〜2〇5配置成一排的法拉第杯 群2及包圍法拉第杯群2全體般地配置抑制電極 3 ’及包圍抑制電極3全體般地配置導電框*。法拉第杯 201〜21 5分別電性連接至電流計5。運算處理器6接收信號 Sg 1 ’其係與由電流計5所測量的電流值對應。抑制電源7 為使抑制電極框3的電位成為比接地電位低電位而連接於 抑制電極框3。但是，導電框4及電流計5為和接地電位同電 位。 構成法拉第杯群2的法拉第杯201〜215為金屬製中空箱， 其分別具有離子束的入射口部及與該入射口部相對的測量 面，電性連接該測量面和電流計5。此外，在法拉第杯 201〜21 5的各測量面捕獲測量對象的離子束時，按照此離子 束照射量產生的射束電流由此測量面流到電流計5。即法拉 第杯群2可作為配置法拉第杯201〜215的一排1 5處的測量位 置的各射束電流量，捕捉在任意照射面的離子束照射量。 又作為構成法拉第杯201〜215的金屬材料，可使用鋁、銅、 鐵等或含有這些的合金等的導電性金屬。此外，法拉第杯 群2雖然具有將15個法拉第杯201〜215以5 mm間隔配置成一 排的構造，但是此法拉第杯的配置數為複數個即可，最好 是奇數。此處，以法拉第杯的配置數為奇數時，可高精度 導出後述射束電流分佈的極大值。此外，法拉第杯群2最好 高密度配置最大數量的法拉第杯。 抑制電極框3具有開口部3(H〜315，其與法拉第杯2〇1〜215 856l6.doc -10 - 200413737 的各入射口部的前端對應。此外，抑制電極框3的開口部 301〜3 15附近可用抑制電源7施加-20〜-100V的負電壓，抑制 因離子束捕獲而從法拉第杯2〇丨〜2丨5分別產生的二次電子 的放出，或分別推回由法拉第杯2〇1〜215放出的二次電子。 藉此，法拉第杯201〜215即可高精度產生與離子束照射量對 應的射束電流。但是，開口部3〇1〜315最好配置於如下的位 置對於法拉第杯2 〇 1〜21 5的各測量面正交的中心軸與開口 部301〜315的各中心轴成為同一軸。又作為構成抑制電極框 3的金屬材料，可使用鋁、銅、鐵等或含有這些的合金等的 導電性金屬。 導電框4具有特定開口寬度（例如開口寬度d[mm])的開口 邵41，係由未圖示的離子束照射裝置射出的離子束通過開 口 4 4 1，其後通過抑制電極框3的開口部3 〇 1〜3 1 $，被法拉 第杯群2的法拉第杯2〇1〜215捕獲。此外，導電框4配置成具 有開口部4丨的壁面和法拉第杯群2成為特定距離（例如距離 L[mm])。但是，導電框4對於到達開口部“以外的壁面的離 子束屏蔽導電框4内部。此外，導電框4和接地電極連接， 藉此防止離子束照射所產生的電荷。又，開口部41的開口 寬度d為滿足檢測出所希望離子束角度分佈的位置範圍的 程度即可，距離L為在開口部41衍射的離子束被法拉第杯群 2有效捕獲的程度的距離即可。再者，開口部“最好配置於 抑制電極框3中心附近的開口部(例如開口部3〇8)的中心軸 和開口邵41的中心軸成為同一轴。此外，作為構成屏蔽框 41的金屬材料，可使用鋁、銅、鐵等或含有這些的合金等 85616.doc -11 - 200413737 的導電性金屬。 電泥計5分別測量從法拉第杯群2的各法拉第杯2〇丨〜2 i 5 產生的射束電流值，輸出與所得到的射束電流值對應的信 號Sgl，送到運算處理器6。 運算處理器6以從電流計5接收的信號Sgl為基礎，進行檢 測與照射到開口部41的離子束照射量對應的射束電流分佈 的運算處理（射束電流分佈運算處理）後，對於表示此電流分 佈的函數f(x)進行使用咼斯（Gauss)法的反褶合積分 (diC〇nv〇luti〇n integral)的運算處理（反褶積運算處理），檢測 開口部41的離子束角度分佈。再者，以表示此角度分佈的 函數z(x)為基礎，進行導出照射到開口部41的離子束方位角 的運算處理（方位角運算處理），檢測此離子束的發散度 (divergence) 〇 又電流計5和運算處理器6之間的信號Sgl的收發可以使 私_计5及運算處理器6配置有線介面等（未圖示），透過配線 或私’·覽等進行，也可以使無線介面等（未圖示）配置，利用無 線通仏進行。此外，運算處理器6可以作為裝置結構，和電 心冲5 一體化，也可以作為運算處理器6，使用具有上述各 運^處理功能的電子計算機或個人電腦等電子機器，對於 離子束分体檢測裝置1設置於外部。再者，運算處理器6也 可以k後述輸入部65輸入上述各射束電流值，這種情況， 由輸入邵65輸入的射束電流值作為相當於被數位化的信號 Sgi的信號，被後述控制部62接收。 其此，就運算處理器6的結構加以詳細說明。圖2為顯示 85616.doc -12- 200413737 運异處理器6結構的方塊圖。在圖2，運算處理器6具有a/d 轉換咨6 1、控制邵62、記憶部63、輸出部料及輸入部。 A/D轉換器61接收由上述電流計5輸出的信號以丨，轉換成 數位信號，其後傳送被數位信號化的信號Sgi到控制部62。 控制部62具有運算處理控制功能：以接收的信號⑷為基 礎，進行上述射束電流運算處理，導出射束電流分佈及其 函數f(x)，進行反褶積運算處理，導出離子束角度分佈及其 函數z(x)，進行方位角運算處理，導出離子束照射方位角， 檢測其發散度。此外，控制部62具有記憶控制功能：將由 上述各運算處理所導出的運算處理結果傳送到記憶部〇使 其儲存。再者從輸入部65輸入所需資料時，控制部“具有 輸出控制功能：將由上述各運算處理所導出的運算處理結 果傳送到輸出部，使其輸出。 記憶部63具有下述功能：儲存從控制部62接收的上述運 算處理結果。此外，記憶部63預先儲存程式，其用作控制 部62達成上述各控制功能。又作為記憶部63，併用儲存上 述程式的ROM(唯讀記憶體）和RAM(隨機存取記憶體可 再寫入的記憶體即可，但可以使用EEPR〇M(電可擦除可程 式唯讀記憶體）等可再寫入的非揮發性記憶體，也可以組: 這些記憶體使用。 輸出部64具有下述功能··對於畫面輸出、列印輸出或軟 碟（註冊商標）、CD-ROM等所希望的記憶媒體輪出從栌部 62接收的上述運算處理結果。 & ° 輸入部65以單獨或組合鍵盤、滑鼠或觸控式每 敬等實 85616.doc -13- 玉見，矣里^ —n. / —、、工 叹疋在待輸入狀態。此處，輸入部65在使上述運 ’處理、、、"果輸出到輸出部64時，輸入所需資訊，在輸入上200413737 发明, Description of the invention: [Technical field to which the invention belongs] This is the ion beam emission detection of an ion beam at an ion beam processing position at an electrical tear level, and detects the ion beam distribution such as the angular distribution of the ion beam Device and ion beam alignment processing device using the same. [Prior art] When an ion doping device or ion beam sputtering device is used to irradiate an ion beam on a surface to be processed, such as a substrate, the ion beam on the surface to be processed ... can be used with a Farady Cup. The beam measuring device) performs electrical measurement (for example, refer to Patent Document 丨). In addition, there is also a beam profile monitor, which has monitoring heads each provided with a plurality of linear electrodes in the two-axis directions of the X-forks, and detects the corresponding number of charged particles (ion particles). The change in the potential of the linear electrode can detect the distribution of charged particles on a plane orthogonal to the direction in which the ion beam progresses (for example, refer to Patent Document 2). [Patent Document 1] JP 2000-311867 (Pages 3-5, Figure 1) [Patent Document 2] JP 2001-243902 (Pages 3-6, Figure 1) [Desired invention Problem Solved] In recent years, the development of more advanced liquid crystal displays II, such as low power consumption, light weight, thinness, and high performance of liquid crystal color displays, has been applied to personal computers as an indicator of the growth of flat panel technology. Information display devices such as equipment are rapidly expanding their uses. In this way, the requirements for the liquid crystal 856l6.doc 200413737 constituting the liquid crystal display must be higher and higher. Here, the liquid crystal display element has a structure in which glass substrates in which transparent electrodes and alignment films are sequentially formed face each other as if the alignment films are inside, a liquid crystal layer is formed between these glass substrates, and as if in direct contact with the alignment films. Liquid crystal molecules constituting the inside of the liquid crystal layer. In addition, in order to achieve higher functionality and higher performance of the liquid crystal display element, it is necessary to control the alignment of liquid crystal molecules of the liquid crystal display element as uniformly as possible. The liquid crystal alignment process of the alignment film that controls the alignment of the liquid crystal molecules is extremely important. Developed a method (ion beam alignment method) as a method of this liquid crystal alignment process: irradiate an ion beam to an alignment film of a liquid crystal display element so that its atomic structure is aligned in a desired direction; thus, the following necessity arises: not only detection The amount of ion beam irradiation on the irradiated surface of the alignment film, and the angular distribution of the ion beam should also be detected. However, the conventional beam measuring device having a Faraday cup with a measuring device and the like described in the above-mentioned patent document measures the τ corresponding to the amount of ion beam irradiated to an arbitrary ion beam processing position in a state that does not correspond to this ion beam angular distribution. The beam is private, so it is difficult to detect the angular distribution of the ion beam that forms the irradiation surface of the alignment film of the liquid crystal display element. For example, a conventional beam measuring device 50 with 10 Faraday cups 51 shown in FIG. 9 is irradiated separately with the same azimuth angle w (see FIG. 90)) or an arbitrary azimuth angle Φ (see FIG. 9 (b)). In the case of two kinds of ion beams or ion beams 2 Id having the same beam amount distribution, the ion beam 21c and the beam amount distributions measured by the beam measuring device 5 (), although the angular distributions of the two are different, but Present the same distribution. 85616.doc 200413737 / Here, it is difficult for the conventional beam measuring device 50 to detect the angular distribution of the ion beam irradiated to an arbitrary position of the alignment film of the liquid crystal display element, and it is difficult to detect the liquid crystal alignment process before performing the above-mentioned ion beam alignment method. Here, the azimuth of the average direction of the ion beam is scattered (divergent), so it is difficult to uniformly control the liquid crystal alignment of the above-mentioned ion beam alignment method. At the same time, the workability of the liquid crystal alignment process is reduced, and even the production efficiency of the liquid crystal display element is reduced. point. On the other hand, even when the beam profile monitor described in Patent Document 2 is used, it is difficult for A to detect the angular distribution of the ion beam irradiated to an arbitrary ion beam processing position, which is insufficient to solve the above-mentioned problem. The present invention has been made in view of the above problems, and an object thereof is to provide an ion beam distribution detection device that electrically measures an ion beam irradiation amount irradiated to an arbitrary ion beam processing position, and detects the ion beam divergence based on the measurement result. And an ion beam alignment processing device using the same. [Summary of the Invention] In order to achieve the above purpose, the ion beam distribution & measuring device 'in the scope of application for patent application' is characterized in that: it is electrically detecting the distribution of charged particles of an ion beam irradiated to a desired surface to be treated, and has a shield Mechanism: the wall of the ion beam is provided with an opening through which the ion beam passes; a plurality of capture mechanisms: # Capt the aforementioned shielding machine #opening the aforementioned ion beam; and a measurement mechanism: electrically connected to the capture mechanism, Those who measure the current generated in the aforementioned capture mechanism. By applying the invention according to the first item of the patent scope, the shielding mechanism passes the ion beam through an opening such as a slit provided on the I side of the ion beam, and a plurality of capturing mechanisms captures the ion beam passing through the opening. The measurement mechanism measures the current corresponding to the amount of charged particles of the ion beam captured by the aforementioned plurality of 85616.doc 200413737, and can detect the current distribution corresponding to the angular distribution of the ion beam irradiated to the desired surface to be processed. In addition, in the above invention, the ion beam distribution detection device according to the second item of the patent application is characterized in that it has an arithmetic processing mechanism and is based on the ion beam current distribution corresponding to the measurement result of the measurement mechanism, at least The Gauss method is used to perform an anti-convolution integration calculation process to detect the angle split of the ion beam. With the invention in the second scope of the patent application, the arithmetic processing unit performs at least the calculation processing of the deconvolution integral based on the Gaussian method based on the aforementioned ion beam current distribution corresponding to the measurement result of the former j measuring mechanism. It can be confirmed that the angular distribution of the aforementioned ion beam is measured. • The ion beam distribution detection device for the third item of the patent application scope is invented by Sergeant ', which is characterized in that the aforementioned capture mechanisms are arranged in a row. Bucket b claims the invention in the third scope of the patent, in which the aforementioned plurality of capture mechanisms are arranged in a row, and the angular distribution of the ion beam irradiated onto the desired surface to be processed can be easily and accurately detected in one axis direction. Regarding the ion beam distribution detection device for the fourth item in the patent application scope, Qian Ming is characterized in that the aforementioned capture mechanism is arranged on a plane. : According to the invention in item 4 of the patent scope, the aforementioned multiple capture machines are arranged so that the angular distribution of the ion beam irradiated to the main processing surface can be easily and accurately detected in the two-axis direction. In addition, in the above invention, the ion beam distribution detection device according to item 5 of the patent application is characterized in that the central axis of the opening portion is orthogonal to the ion beam capture surface of the plurality of capture mechanisms before the formation of 85616.doc 200413737. The central axis is the same axis. According to the invention claimed in claim 5 of the patent scope, the shielding mechanism is configured to have an opening, which has the same central axis as the central axis orthogonal to the ion beam capturing surface formed by the plurality of capturing mechanisms, so that The angular distribution of the ion beam detected by the processing mechanism is optimal. In addition, the ion beam distribution detection device according to item 6 of the patent application, in the above invention, is characterized in that the arrangement number of the plurality of capture mechanisms is an odd number. According to the invention in the sixth aspect of the patent application, the number of the arrangement of the plurality of capturing mechanisms becomes an odd number, and the maximum value of the angle distribution of the ion beam detected by the operation processing mechanism can be derived with high accuracy. In addition, as for the ion beam alignment processing device of the seventh scope of the patent application, it is characterized by having the ion beam distribution detection device described in any one of the first to sixth scope of the patent application. By applying the invention of the seventh scope of the patent application, since the ion beam distribution detection device contained in any one of the first to sixth scope of the patent application is provided, the effects of the first to sixth scope of the patent application can be obtained. [Embodiment] Hereinafter, a preferred embodiment of the ion beam distribution detection device according to the present invention will be described in detail with reference to the accompanying drawings. (First Embodiment) First, the structure of an ion beam distribution detecting apparatus according to a first embodiment of the present invention will be described in detail. FIG. 1 is a schematic diagram of a structure of an ion beam distribution inspection apparatus according to a first embodiment of the present invention. In FIG. 丨, the ion beam distribution detection device 丨 has a Faraday Cup group 2 in which 15 Farady Cups 205 to 205 are arranged in a row, and a suppression electrode 3 ′ is generally arranged around the Faraday Cup group 2 and A conductive frame * is arranged to surround the suppression electrode 3 as a whole. Faraday cups 201 ~ 21 5 are electrically connected to the ammeter 5, respectively. The arithmetic processor 6 receives the signal Sg 1 ′, which corresponds to the current value measured by the ammeter 5. The suppression power source 7 is connected to the suppression electrode frame 3 so that the potential of the suppression electrode frame 3 becomes lower than the ground potential. However, the conductive frame 4 and the ammeter 5 have the same potential as the ground potential. The Faraday cups 201 to 215 constituting the Faraday cup group 2 are metal hollow boxes, each of which has an entrance portion of an ion beam and a measurement surface opposite to the entrance portion, and the measurement surface and the galvanometer 5 are electrically connected. In addition, when an ion beam of a measurement object is captured at each of the measurement surfaces of the Faraday cups 201 to 21 5, a beam current generated in accordance with the irradiation amount of the ion beam flows from the measurement surface to the galvanometer 5. That is, the Faraday cup group 2 can be used as the beam current amount of each 15 measurement positions in a row of Faraday cups 201 to 215 to capture the ion beam irradiation amount on any irradiation surface. Further, as the metal material constituting the Faraday cups 201 to 215, conductive metals such as aluminum, copper, iron, or alloys containing these can be used. In addition, although the Faraday cup group 2 has a structure in which 15 Faraday cups 201 to 215 are arranged in a row at 5 mm intervals, the number of the Faraday cups may be plural, and an odd number is preferred. Here, when the number of Faraday cups arranged is an odd number, the maximum value of the beam current distribution described later can be derived with high accuracy. In addition, the Faraday Cup Group 2 is preferably configured with a maximum number of Faraday Cups at a high density. The suppression electrode frame 3 has openings 3 (H to 315, which correspond to the tips of the entrance openings of the Faraday cups 201 to 215 856l6.doc -10-200413737. In addition, the suppression electrode frame 3 has openings 301 to 3 A negative voltage of -20 to -100V can be applied near 15 to suppress the release of secondary electrons generated from the Faraday cups 20 丨 ~ 2 丨 5 due to ion beam capture, or pushed back by the Faraday cup 2〇. Secondary electrons emitted from 1 to 215. With this, the Faraday cups 201 to 215 can generate a beam current corresponding to the amount of ion beam irradiation with high accuracy. However, the openings 3101 to 315 are preferably arranged at the following positions. The central axis orthogonal to each measuring surface of the Faraday Cup 2 〇1 ～ 21 5 is the same axis as the central axis of each of the openings 301 ～ 315. As the metal material constituting the suppression electrode frame 3, aluminum, copper, iron, etc. can be used. Or conductive metal containing these alloys. The conductive frame 4 has an opening 41 having a specific opening width (for example, an opening width d [mm]), and an ion beam emitted from an ion beam irradiation device (not shown) passes through the opening 4 4 1, then by suppressing the opening of the electrode frame 3 The mouth portion 3 〇1 ~ 3 1 $ is captured by the Faraday cups 2101 ~ 215 of the Faraday cup group 2. In addition, the conductive frame 4 is configured to have a wall surface with an opening 4 丨 and the Faraday cup group 2 has a specific distance (for example, a distance L [mm]). However, the conductive frame 4 shields the inside of the conductive frame 4 from the ion beam reaching the wall surface other than the opening portion. In addition, the conductive frame 4 is connected to a ground electrode to prevent electric charges generated by the ion beam irradiation. The opening width d of the opening portion 41 may be a degree that satisfies the position range in which a desired ion beam angular distribution is detected, and the distance L may be a distance to which the ion beam diffracted in the opening portion 41 is effectively captured by the Faraday cup group 2. Furthermore, it is preferable that the central axis of the opening portion (for example, the opening portion 308) disposed near the center of the suppression electrode frame 3 and the central axis of the opening 41 be the same axis. In addition, as the metal constituting the shield frame 41, As the material, conductive metals such as aluminum, copper, iron, or alloys containing these 85616.doc -11-200413737 can be used. The electric cement meter 5 measures each of the Faraday cups 20 from the Faraday cup group 2 to 2 i 5 Resulting shot The beam current value outputs a signal Sgl corresponding to the obtained beam current value and sends it to the arithmetic processor 6. Based on the signal Sgl received from the ammeter 5, the arithmetic processor 6 detects and irradiates the opening 41 After calculation processing of the beam current distribution (beam current distribution calculation processing) corresponding to the amount of ion beam irradiation, a function f (x) representing this current distribution is subjected to a deconvolution integral (diC) using a Gauss method. nv〇luti integraln integral) calculation processing (deconvolution calculation processing) to detect the ion beam angular distribution of the opening 41. Furthermore, based on a function z (x) representing the angular distribution, a calculation process (azimuth calculation process) for deriving the azimuth angle of the ion beam irradiated to the opening 41 is performed, and the divergence of the ion beam is detected. In addition, the transmission and reception of the signal Sgl between the galvanometer 5 and the arithmetic processor 6 may allow the personal computer 5 and the arithmetic processor 6 to be equipped with a wired interface or the like (not shown), and may be performed through wiring or private communication. The wireless interface and the like (not shown) are arranged using wireless communication. In addition, the arithmetic processor 6 can be used as a device structure and integrated with the electrocardiogram 5 or can be used as the arithmetic processor 6 by using electronic equipment such as an electronic computer or a personal computer having the above-mentioned various processing functions. The detection device 1 is provided outside. In addition, the arithmetic processor 6 may input the above beam current values to the input unit 65 described later. In this case, the beam current value input from the input port 65 is used as a signal corresponding to the digitized signal Sgi, which will be described later. The control unit 62 receives it. Here, the configuration of the arithmetic processor 6 will be described in detail. Figure 2 is a block diagram showing the structure of the 85616.doc -12- 200413737 different processor 6. In FIG. 2, the arithmetic processor 6 includes an a / d converter 61, a control unit 62, a memory unit 63, an output unit, and an input unit. The A / D converter 61 receives the signal output from the ammeter 5 and converts it into a digital signal, and then transmits the digitally signaled signal Sgi to the control unit 62. The control unit 62 has a calculation processing control function: based on the received signal ⑷, performs the above-mentioned beam current calculation processing, derives the beam current distribution and its function f (x), performs deconvolution calculation processing, and derives the ion beam angle distribution. And its function z (x), the azimuth calculation process is performed, the azimuth angle of the ion beam irradiation is derived, and the degree of divergence is detected. In addition, the control section 62 has a memory control function: the operation processing result derived from each of the above-mentioned operation processing is transmitted to the storage section 0 and stored. In addition, when inputting required data from the input unit 65, the control unit "has an output control function: The operation processing result derived from each of the above-mentioned operation processes is transmitted to the output unit for output. The memory unit 63 has the following function: The above-mentioned calculation processing result received by the control unit 62. In addition, the memory unit 63 stores a program in advance, which is used as the control unit 62 to achieve the above-mentioned control functions. It also functions as the memory unit 63 and uses a ROM (read-only memory) and RAM (random access memory rewritable memory is sufficient, but rewritable non-volatile memory such as EEPROM (electrically erasable and programmable read-only memory) can be used) : These memories are used. The output unit 64 has the following functions: It rotates the above-mentioned arithmetic processing received from the unit 62 for a desired memory medium such as screen output, print output, or a floppy disk (registered trademark), CD-ROM, etc. Result. &Amp; ° The input unit 65 is a separate or combined keyboard, mouse, or touchpad. 85616.doc -13- Tamami, 矣 里 ^ —n. / — ,, sigh 疋 is in the state of waiting for input ... here, enter In the operation 65 so that the 'process ,,, " when the result to the output section 64, enter the required information on the input
身^ 啼*、、云 7 太 X 包 < 彳1時’傳送相當於被數位化的信號Sgl的信號 到控制部62。 其八’就導出照射到離子束分佈檢測裝置1的離子束照射 万&角’到檢測出此離子束發散度的處理程序加以詳細說 月圖3為一流程圖，其顯示由離子束照射裝置射出的離子 束通過構成離子束分佈檢測裝置1的導電框4的開口部41， 被法拉第杯群2的法拉第杯201〜215捕獲之後，導出照射到 開口邵41的離子束方位角，再到檢測出此離子束發散的處 理私序。此外，圖4為由離子束照射裝置射出的離子束照射 到離子束分佈檢測裝置1的開口部41的狀態的模式圖。又， 離子束刀佈;^測裝置i在平面上配置成法拉第杯群2和X 軸平行’並且開口部41的中心和原點〇 一致。 在圖3及圖4,離子束照射裝置20從對於離子束分佈檢測 裝置1垂直的方向射出離子束21，其後離子束21到達離子束 义佈檢測裝置1。此處，照射到離子束分佈檢測裝置1的開 口部41的離子束21通過開口部41而入射到導電框4内部。入 射的離子束21分別通過圖1所示的抑制電極框3的開口部 301〜3 15後，到達法拉第杯群2的法拉第杯2〇1〜215，在法拉 第杯201〜21 5的各測量面被捕獲（步驟S10)。其後，在捕浐離 子束21的法拉第杯201〜215分別產生與捕獲的離子束照射 量對應的射束電流。 其次’電流計5分別計測上述各射束電流量（步驟$ 11), 85616.doc -14- 200413737 輸出與所得到的射束電流量對應的信號Sgi。此信號sgi用 圖2所示的A/D轉換器61轉換成數位信號後，被控制部62接 收。其後’控制邵62以接收到的信號sg 1為基礎，進行上述 射束電流分佈運算處理（步驟S12)，導出電流分佈函數 f(x)’其表示對於在法拉第杯群2的位置X的射束電流分佈， 使用此電流分佈函數f(x)檢測對於測量位置X的射束電流分 佈。 圖5為顯示由步驟S12的射束電流分佈運算處理所檢測出 的射束電流分佈之圖，位置x[mm]係以原點〇為起點，與捕 獲離子束21的法拉第杯201〜215的各配置對應。如圖5所 不，表示射束電流分佈的電流分佈函數f(x)的原點Q取極大 值（例如29 μΑ程度），呈現近似標準分佈的分佈。 其次，控制部62對於上述電流分佈函數f(x)進行使用高斯 法的反褶合積分（dic〇nv〇iution integral)的運算處理（反褶積 運算處理）（步驟SU)，導出角度分佈函數ζ(χ)，使用此角度 分佈函數Ζ(χ)檢測在離子束分佈檢測裝置丨的開口部“的離 子束21的角度分佈。 此處，以電流分佈函數f(x)表示的離子束21的射束電流分 佈反映出離子束照射裝置2G的離子束光源形狀及該光源的 強度分佈’具有照射_子束分佈檢測裝置⑽開口部41的 離子束21的角度分佈資訊，此，電流分伟函數⑽可用表 示開口部41形狀的狹縫函數h(x)和表示離子束角度分佈的 角度分佈函數z(x)如下式（丨）表示： f(x) - S h(T).z(x-i:) (1τ (-〇ο<τ<〇ο) · · · (^ 85616.doc -15- 藉由此式（1)，可理解在電流分佈函數f(x)、狹縫函數h(x) 及角度分佈函數z(x)之間，褶合積分的關係成立。因此，對 於式（1)進行上述反褶積運算處理，可導出角度分佈函數 z(x)。此外’開口邵41的狹縫形狀為正方形時，狹縫函數h(x) 可與開口部41的開口寬度d[mm]的範圍對應，用下式（2)及 (3)表示： h(x) = 0 (x<-d/2、d/2<x) · · · (2) h(x) = c (-d/2<x<d/2) · · · (3) 其中，式（3)的值c為狹缝的透過常數。 又，藉由式（2)及（3)，狹縫函數h(x)為具有寬度d的脈衝函 數，與開口部41的狹缝形狀對應。此外，式（丨）對於表示任 意狹缝形狀的狹缝函數h(x)成立，所以開口部41的狹縫形狀 並不限於正方形或長方形等的脈衝型，也可以是三角形或 五角形以上的多角形或圓、橢圓等各種形狀的狹縫。 圖6為顯示由步驟S 13的反褶積運算處理所檢測出的離子 束21角度分佈之圖，位置x[mm]係以原點〇為起點，與捕獲 離子束21的法拉第杯201〜215的各配置對應。如圖6所示， 表示在開口部41的離子束21角度分佈的角度分佈函數ζ(χ) 在原點0取極大值，呈現近似標準分佈的分佈。又，此角度 分佈函數ζ(χ)的極限值規格化成「1」。 其次，控制部62以圖6所示的離子束21角度分佈為基礎， 進行方位角運具處理（步驟S 14)’導出照射到離子束分佈檢 測裝置1的開口部41的離子束2 1的方位角㊀[deg·]。此處，此 方位角e[deg·]為在圖4所示的離子束22和X軸之間形成的角 85616.doc -16 - 200413737 度，可定義成在上述離子束21的角度分佈的平均角度。但 是，離子束22為顯示照射到開口部41的離子束21平均方向 的集合體，具有在離子束22内部形成最大角度的離子束 21a 、 21b 。 因此，此方位角e[deg·]可用與在圖6所示的離子束21角度 分佈的半值寬度對應的位置x ◦和導電框4及法拉第杯群2之 間的距離L，藉由下式（4)表示： Θ = tarT^L/x。） · · ·⑷ 例如在式⑷，距離L為30mm，位置χ。為1〇mmaf，方位㈣ 成為72 deg.程度。 此外，圖6所示的離子束21角度分佈將上述方位角㊀定義 在離子束21角度分佈的平均角度時，顯示照射到開口部41 的離子束2 1的發散度（divergence) 〇 即在圖6所示的離子束21角度分佈方面，極大值和呈現極 大值的位置_關係顯示離子束21對於所希望照射面的指 向性’並且此角度分体寬度顯示離子束21在所希望照射面 的配向性（平行性）。例#呈現此角纟分佈極大值的位置X為 原點㈣）時，離子束21對於所希望照射面照射到所希望方 σ另方面此角度分体寬度有時，離子束叫勺發散角 度Θ(1變小，離子束21的平行性增大。 再者，以上述離子束21角度分㈣極大值為观的角度 (半值角）可定義成表示在此離子束21平均方向的方位角^ 散分佈的發散角度ed[deg·]。例如角度分佈函數ζ(χ)表示圖: 所π的離子束21角度分佈時，此離子束21的發散角度^成 85616.doc 17 200413737 為18 deg.。又，發散角度ed[deg]相當於圖斗所示的離子束 22内邵的離子束21a、21b形成的角度。 因此，進行上述步驟S12〜S14的各運算處理時，，可導出照 射到離子束分佈檢測裝置丨的開口部41的離子束21的方位 角㊀，並可檢測出表示此離子束21發散的角度分佈（參考圖 6)及發散角度0d。 此外，上述步驟S12〜S14的各運算處理結果從輸入部65 輸入所需資訊時，用輸出部64做畫面顯示等輸出（步驟 Sl5)〇 又，上述步驟Sio〜S14雖係在xy平面上如使法拉第杯群2 成為與X軸平行般地配置離子束分佈檢測裝置丨，以檢測乂方 向的離子束的方位角Θ、發散、發散角度θά，但如使法拉第 杯群2成為與y軸平行般地配置離子束分佈檢測裝置丨，則亦 可檢測y方向的離子束的方位角㊀、發散、發散角度Θ(1。此 外，在xy平面上的任意位置調整開口部41時，離子束分佈 檢測裝置1也可以檢測在”平面上的任意位置的離子束的 方位角θ、發散、發散角度Θ(1。 此處，使離子束分佈檢測裝置1的開口部41和所希望離子 束處理位置一致時，離子束分佈檢測裝置1可檢測照射到此 離子束處理位置的離子束角度分佈及方位角θ，並可檢測此 離子束的發散及發散角度ed。藉此，可評估在所希望離子 束處理位置的離子束的指向性及配向性，並可容易檢測對 於離子束照射裝置的照射條件的離子束發散相關性。再 者’監控此離子束發散時，離子束照射裝置可將具有良好 85616.doc -18- 200413737 指向性及配向性的離子束容易設定在可照射的條件。 圖7為顯示離子束和使用此離子束進行液晶配向處理的 配向膜的異方向性D△的關係之圖。又，配向膜的異方向性 D△越是高的值，越顯示良好的液晶異方向,卜在圖7,配 向膜的異方向性DA係離子束發散角度ed越小，越顯示高的 值。即，使用配向性（平行性）高的離子束進行液晶配向處理 時’可得到良好的液晶異方向性。因&，監控離子束發散 度而設足離子束照射裝置較射條件時，可騎具有良好 指向性及配向性的離子束，藉此可得到具有更高的液晶配 向限制力（anchoring)的配向膜。 如以上說明，離子束分佈檢測裝置丨具有下列構造；將法 拉第杯201〜215配置成一排的法拉第杯群2配置於抑制電極 框3内部，該抑制電極框3具有與法拉第杯2〇1〜215的各位置 對應所配置的開口部301〜315，抑制電極框3配置於具有開 口部41的導電框4内部；僅照射到開口部“的離子束在導電 框4内部前進，到達法拉第杯群2，使射束電流產生，其後 以與此射束電流值對應的輸出信號Sgl為基礎，檢測射束電 流分佈及電流分佈函數f(x)，對於電流分佈函數f(x)進行使 用高斯法的反褶積運算處理，檢測角度分佈及角度分佈函 數z(x)其後檢測此離子束方位角Θ及發散度構成，所以可 檢測出照射到開口部41的離子束的方位角θ、發散度及發散 角度θοΐ。 因此’使所希望離子束處理位置與開口部41 一致時，離 子束分佈檢測裝置1可檢測出在此離子束處理位置的離子 85616.doc -19- 200413737 束的方位角θ、發散及發散角度⑽’可容易評估在所希望離 。藉此，離子束 _子束容易設定 落配向，同時可 子束處理位置的離子束的指向性及配向性。藉此， 照射裝置可將具有良好指向性及配向性的離子The body 7 and the cloud 7 are too X packets < 时 1 'to transmit a signal equivalent to the digitized signal Sgl to the control unit 62. The eighth step is to derive the processing procedure of the ion beam irradiation angle & angle that is irradiated to the ion beam distribution detection device 1 to detect the divergence of the ion beam. The process is described in detail. FIG. 3 is a flowchart showing the irradiation by the ion beam. The ion beam emitted by the device passes through the opening 41 of the conductive frame 4 constituting the ion beam distribution detection device 1 and is captured by the Faraday cups 201 to 215 of the Faraday cup group 2, and then the azimuth angle of the ion beam irradiated to the opening 41 is obtained. The processing sequence of this ion beam divergence was detected. In addition, FIG. 4 is a schematic view showing a state where the ion beam emitted from the ion beam irradiation device is irradiated to the opening portion 41 of the ion beam distribution detection device 1. In addition, the ion beam cutting tool i is arranged on a plane so that the Faraday cup group 2 is parallel to the X-axis', and the center of the opening portion 41 coincides with the origin 〇. In Figs. 3 and 4, the ion beam irradiation device 20 emits an ion beam 21 from a direction perpendicular to the ion beam distribution detection device 1, and thereafter the ion beam 21 reaches the ion beam detection device 1. Here, the ion beam 21 irradiated to the opening portion 41 of the ion beam distribution detecting device 1 passes through the opening portion 41 and enters the inside of the conductive frame 4. The incident ion beam 21 passes through the openings 301 to 3 15 of the suppression electrode frame 3 shown in FIG. 1, and then reaches the Faraday cups 201 to 215 of the Faraday cup group 2, and the measurement surfaces of the Faraday cups 201 to 21 5 Captured (step S10). Thereafter, in the Faraday cups 201 to 215 of the trapped ion beam 21, beam currents corresponding to the captured ion beam irradiation amounts are generated, respectively. Next, the galvanometer 5 measures each of the above-mentioned beam current amounts (step $ 11), and 85616.doc -14-200413737 outputs a signal Sgi corresponding to the obtained beam current amount. This signal sgi is converted into a digital signal by the A / D converter 61 shown in Fig. 2 and is received by the control unit 62. Thereafter, "control Shao 62 performs the above-mentioned beam current distribution calculation process based on the received signal sg 1 (step S12), and derives a current distribution function f (x)", which indicates that for the position X in the Faraday Cup group 2 Beam current distribution. Use this current distribution function f (x) to detect the beam current distribution for the measurement position X. FIG. 5 is a graph showing a beam current distribution detected by the beam current distribution calculation processing in step S12. The position x [mm] is from the origin 0 and starts from the Faraday cups 201 to 215 of the captured ion beam 21. Each configuration corresponds. As shown in Fig. 5, the origin Q of the current distribution function f (x) representing the beam current distribution takes a maximum value (for example, about 29 μA), and presents a distribution that approximates a standard distribution. Next, the control unit 62 performs a calculation process (deconvolution operation process) of the current distribution function f (x) using a Gaussian deconvolution integral (deconvolution operation process) (step SU) to derive an angle distribution function. ζ (χ), and use this angular distribution function Z (χ) to detect the angular distribution of the ion beam 21 “in the opening of the ion beam distribution detection device”. Here, the ion beam 21 represented by the current distribution function f (x) The beam current distribution of 形状 reflects the shape of the ion beam light source of the ion beam irradiation device 2G and the intensity distribution of the light source, 'the angular distribution information of the ion beam 21 having the irradiation_subbeam distribution detection device⑽ opening 41, and the current is powerful The function ⑽ can be expressed by a slit function h (x) representing the shape of the opening 41 and an angular distribution function z (x) representing the angular distribution of the ion beam as follows (丨): f (x)-S h (T) .z ( xi :) (1τ (-〇ο < τ < 〇ο) · · · (^ 85616.doc -15- From this formula (1), it can be understood that the current distribution function f (x), the slit function h ( The relationship between the convolution integrals between x) and the angular distribution function z (x) holds. Therefore, the above formula (1) The deconvolution calculation process can derive the angle distribution function z (x). In addition, when the slit shape of the opening 41 is square, the range of the slit function h (x) and the opening width d [mm] of the opening 41 Correspondence is expressed by the following formulas (2) and (3): h (x) = 0 (x < -d / 2, d / 2 < x) · · · (2) h (x) = c (-d / 2 < x < d / 2) ··· (3) Here, the value c of the formula (3) is the transmission constant of the slit. In addition, according to the formulas (2) and (3), the slit function h (x) Is a pulse function with a width d, corresponding to the shape of the slit of the opening 41. In addition, equation (丨) holds for a slit function h (x) representing an arbitrary slit shape, so the shape of the slit of the opening 41 is not It is limited to a pulse type such as a square or a rectangle, and may be a triangle or a pentagon or a polygon or a slit of various shapes, such as a circle or an ellipse. Fig. 6 shows an ion beam detected by the deconvolution operation processing in step S13. In the 21 angle distribution diagram, the position x [mm] starts from the origin 0 and corresponds to each arrangement of the Faraday cups 201 to 215 that captures the ion beam 21. As shown in FIG. 6, the ion beam 21 at the opening 41 is shown. Angular distribution The angular distribution function ζ (χ) takes a maximum value at the origin 0 and presents a distribution that approximates a standard distribution. Moreover, the limit value of this angular distribution function ζ (χ) is normalized to "1". Next, the control unit 62 is shown in Fig. 6 Based on the angular distribution of the ion beam 21, the azimuth carrier processing is performed (step S 14) ′ to derive the azimuth angle ㊀ [deg ·] of the ion beam 21 irradiated to the opening 41 of the ion beam distribution detection device 1. Here, the azimuth e [deg ·] is an angle formed between the ion beam 22 and the X axis shown in FIG. 885616.doc -16-200413737 degrees, and can be defined as the angle distribution of the above-mentioned ion beam 21 Average angle. However, the ion beam 22 is an aggregate showing the average direction of the ion beam 21 irradiated to the opening 41, and includes the ion beams 21a and 21b which form the largest angle inside the ion beam 22. Therefore, this azimuth e [deg ·] can be a distance x corresponding to the half-value width of the angular distribution of the ion beam 21 shown in FIG. 6 and the distance L between the conductive frame 4 and the Faraday cup group 2, by the following Equation (4) shows: Θ = tarT ^ L / x. ) · · · ⑷ For example, in formula ⑷, the distance L is 30mm, and the position χ. It is 10 mmaf, and the orientation ㈣ becomes about 72 deg. In addition, when the angular distribution of the ion beam 21 shown in FIG. 6 defines the above azimuth angle 在 as the average angle of the angular distribution of the ion beam 21, the divergence of the ion beam 21 irradiated to the opening 41 is displayed. In terms of the angular distribution of the ion beam 21 shown in Fig. 6, the maximum value and the position_relationship showing the maximum value indicate the directivity of the ion beam 21 to the desired irradiation surface ', and this angular split width shows the ion beam 21 on the desired irradiation surface Orientation (parallelism). Example # When the position X where the maximum value of this angular distribution is present is the origin ㈣), the ion beam 21 irradiates the desired irradiation surface to the desired square σ. On the other hand, this angle split width Sometimes, the ion beam is called the spoon divergence angle Θ (1 becomes smaller, and the parallelism of the ion beam 21 increases. Furthermore, the angle (half value angle) at which the maximum value of the angle division of the ion beam 21 is observed can be defined as the azimuth angle indicating the average direction of the ion beam 21 ^ The divergence angle ed [deg ·] of the divergence distribution. For example, the angle distribution function ζ (χ) represents the graph: When the ion beam 21 is angularly distributed, the divergence angle of the ion beam 21 ^ becomes 85616.doc 17 200413737 is 18 deg In addition, the divergence angle ed [deg] corresponds to the angle formed by the ion beams 21a and 21b in the ion beam 22 shown in the figure. Therefore, when performing each of the above-mentioned steps S12 to S14, the irradiation can be derived The azimuth angle of the ion beam 21 to the opening 41 of the ion beam distribution detecting device 丨 can detect the angular distribution (refer to FIG. 6) and the divergence angle 0d indicating the divergence of the ion beam 21. In addition, the above steps S12 to S14 The results of each calculation process are input from the input unit 65. In the case of information, the output unit 64 is used for screen display and other output (step S15). Furthermore, although the above steps Sio to S14 are on the xy plane, if the Faraday cup group 2 is arranged parallel to the X axis, the ion beam distribution detection device is arranged. In order to detect the azimuth angle Θ, divergence, and divergence angle θά of the ion beam in the 乂 direction, if the ion beam distribution detection device is arranged so that the Faraday Cup group 2 is parallel to the y axis, the ion beam in the y direction can also be detected Azimuth angle, divergence, divergence angle Θ (1. In addition, when adjusting the opening 41 at an arbitrary position on the xy plane, the ion beam distribution detection device 1 can also detect the azimuth of the ion beam at an arbitrary position on the "plane" θ, divergence, divergence angle Θ (1. Here, when the opening 41 of the ion beam distribution detection device 1 is made to coincide with a desired ion beam processing position, the ion beam distribution detection device 1 can detect Ion beam angular distribution and azimuth angle θ, and the divergence and divergence angle ed of this ion beam can be detected. In this way, the directivity and alignment of the ion beam at the desired ion beam processing position can be evaluated And it can easily detect the correlation of ion beam divergence to the irradiation conditions of the ion beam irradiation device. Furthermore, when monitoring the ion beam divergence, the ion beam irradiation device can have good directivity and alignment of 85616.doc -18- 200413737 Ion beams can be easily set under conditions that can be irradiated. Figure 7 is a graph showing the relationship between the ion beam and the anisotropy D △ of the alignment film used for the liquid crystal alignment process using the ion beam. The more the anisotropy D △ of the alignment film The higher the value, the better the liquid crystal anisotropy is. As shown in FIG. 7, the smaller the anisotropic DA-type ion beam divergence angle ed of the alignment film is, the higher the value is displayed. That is, the alignment (parallelism) is high. When the ion beam is subjected to a liquid crystal alignment treatment, good liquid crystal anisotropy can be obtained. Due to &, the ion beam irradiation device is set to monitor the ion beam divergence, and when the ion beam irradiation device is set to the shooting conditions, it can ride an ion beam with good directivity and alignment, thereby obtaining an anchoring with higher liquid crystal alignment. Alignment film. As explained above, the ion beam distribution detection device has the following structure; the Faraday cup groups 2 arranged in a row of the Faraday cups 201 to 215 are arranged inside the suppression electrode frame 3, and the suppression electrode frame 3 has the Faraday cups 201 to 215 The positions corresponding to the openings 301 to 315 are arranged. The suppression electrode frame 3 is arranged inside the conductive frame 4 having the opening portion 41. The ion beam irradiated only to the opening portion advances inside the conductive frame 4 and reaches the Faraday cup group 2. The beam current is generated, and then based on the output signal Sgl corresponding to the beam current value, the beam current distribution and the current distribution function f (x) are detected, and the Gaussian method is used for the current distribution function f (x). The deconvolution operation process detects the angular distribution and the angular distribution function z (x), and then detects the ion beam azimuth angle Θ and the degree of divergence, so the azimuth angle θ and divergence of the ion beam irradiated to the opening 41 can be detected Degree and divergence angle θοΐ. Therefore, when the desired ion beam processing position is matched with the opening 41, the ion beam distribution detection device 1 can detect ions at the ion beam processing position 85616.do c -19- 200413737 Beam azimuth angle θ, divergence and divergence angle ⑽ 'can be easily evaluated at the desired distance. By this, the ion beam _ sub-beam can be easily set to fall orientation, and the directivity of the ion beam at the sub-beam processing position can be set. And alignment. With this, the irradiating device can convert ions with good directivity and alignment.
… . ” w ·〜「氏利刀叼问腺的離予束。 此外也可以在對於液晶顯示元件的配向膜進行離子束 配向法的配向處理的離子束配向處理裝置使用為本發明第 -實施例的離子束分佈檢測裝置i。此處，離子束配向處理 裝置構成如下：具備離子束照射裝置、照射平台及離子束 分佈檢測裝置1，離子束分佈檢測裝置丨和照射平台在同一 平面上自由平面驅動，將由離子束照射裝置以所希望射出 角度射出的離子束照射到照射平台上的所希望處理位置或 離子束分佈檢測裝置丨的開口部41。因此，離子束分佈檢測 裝置1可檢測照射到開口部41的離子束角度分佈，其後使裝 載敗晶配向膜的照射平台和離子束分佈檢測裝置丨平面驅 動，切換照射平台上的所希望處理位置和開口部4丨的位 置。藉此，離子束配向處理裝置可在配向處理前檢測出照 射平台上所希望處理位置的離子束的方位角θ、發散及發散 角度ed，所以可容易評估在所希望處理位置的離子束的指 向性及配向性，可實現均勻控制離子束配向法的液晶配 向’同時具有更高的液晶配向限制力的配向膜。因此，使 用此離子束配向處理裝置時，在液晶顯示元件的生產製 矛王’可使用離子束配向法的液晶配向處理的作業性及生產 效率更加提高。 85616.doc -20- 200413737 (弟一貫施例） 其’人，就本發明第二實施例加以詳細說明。上述第一實 他例利用具有配置成一排的法拉第杯2〇1〜215的法拉第杯 群2’對於一軸方向檢測在所希望離子束處理位置的離予束 的万位角Θ、發散及發散角度⑼，但此第二實施例使用具有 配置成格子狀的法拉第杯的法拉第杯群。 圖8為顯示為本發明第二實施例的離子束分佈檢測裝置 結構的方塊圖。此離子束分佈檢測裝置3〇具有法拉第杯群^ 取代第一實施例的離子束分佈檢測裝置丨的法拉第杯群2 , 具有抑制電極框9取代抑制電極框3。其他結構和第一實施 例相同，在同一結構部分附上同一符號。 法拉第杯群8將法拉第杯8a配置成縱5行、橫5列的格子 狀，法拉第杯群8的各法拉第杯8a和電流計5電性連接。此 外，抑制電極9具有開口部9a，其與法拉第杯群8的各法拉 第杯8a對應。 此處，離子束分佈檢測裝置3〇配置成對應所希望離子束 處理位置和開口部41時，離子束分佈檢測裝置30可對於二 軸方向（例如X、y軸）同時檢測出在此離子束處理位置的離子 束的方位角Θ、發散及發散角度Qd。 此第二實施例使用具有配置成格子狀的法拉第杯的法拉 第杯群，對於二軸方向同時檢測出在所希望離子束處理位 置的離子束的方位角㊀、發散及發散角度⑽，所以可更周密 評估在此離子束處理位置的離子束的指向性及配向性，藉 此可使離子束照射裝置的照射條件容易最佳化。 85616.doc •21 - 200413737 此外，也可以在對於液晶顯示元件的配向膜進行離子束 配向法的配向處理的離子束配向處理裝置使用為本發明第 二實施例的離子束分佈檢測裝置30。此處，此離子束配向 處理裝置具有和具備上述離子束分佈檢測裝置1的離子束 配向處理裝置同樣的結構，在配向處理前可對於二軸方向 檢測出照射到所希望處理位置的離子束的方位角θ、發散及 發散角度ed，所以可更容易且高精度評估在所希望離子束 處理位置的離子束的指向性及配向性，可實現均勻控制離 子束配向法的液晶配向，同時具有更高的液晶配向限制力 _ 的配向膜。因此，使用此離子束配向處理裝置時，在液晶 顯示元件的生產製程，可使用離子束配向法的液晶配向處 理的作業性及生產效率更加提高。 又’在本發明第一及第二實施例作為抑制在法拉第杯的 二次電子產生或將產生的二次電子再度推回法拉第杯的機 構’顯示使用抑制電極框的情況，但本發明並不限於此， 也可以適用於抑制電極板的情況。 春 此外’在本發明第一及第二實施例顯示使用具有一個開 口部的導電框的情況，但本發明並不限於此，也可以適用 於使用具有一個開口部的導電板的情況。 此外’在本發明第一及第二實施例顯示配置複數個法拉 第杯的情況，但本發明並不限於此，也可以適用於排列設 置複數個線狀電極以取代法拉第杯的情況。 此外’在本發明第二實施例使用將25個法拉第杯8a配置 成縱5行、檢5列的格子狀的法拉第杯群8，但構成法拉第杯 85616.doc -22- 200413737 200413737 、橫向至少2列即可，或者 同。 群8的法拉第杯配置縱向至少2行 縱向橫向的排列數也可以不是相 【發明之效果】 機：月:精由申請專利範圍第β之發明，由於屏蔽 Γ::Γ子束的壁面的狹縫等開口部使離子束通 過，稷數個捕獲機構捕獲通過前述開口部的離子束，測量 機構測里與為前述複數個捕獲機構所捕 子量㈣的m以可«檢測出與照射到所希望被處 理面的離子束角度分体對應的電流分体，以此為基礎，得 到可確實㈣出照㈣料錢處理㈣離子束減分佈 的效果。精此’實現可^評估在料望離子束處理位置 的離子束的指向性及配向性的離子束分佈檢測裝置，並且 使用此離子束分佈檢測裝置可評估離子束的指向性及配向 性㈣子束照射裝置，可將具有良好指向性及配向性的離 子束令易，又疋在可照射的條件’所以可容易照射均勻控制 :晶配向，同時可實現具有更高的液晶配向限制力的配向 膜的離子束，在液晶顯示元件的生產製程，得到用離子束 配向法的液晶配向處理的作業性及生產效率更加提高的效 果。 匕卜藉由申請專利範圍第2項之發明，由於運算處理機 構乂 述/則量機構的測量結果對應的前述離子束電流分 疋至少進行基於高斯法的反褶合積分的運算處 理，所以得到可办 备易且確實檢測出前述離子束角度分佈的 效果。 85616.doc -23- 200413737 此外，猎由申請專利範圍第3項之發明，由 捕獲機構如配置成—排般地構成，所以得到對於一二 可容易且㈣度檢❹照射到所希望被處理面的離 度分佈的效果。 ^ 此外，藉由申請專利範圍第4項之發明，由於前述複數個 ㈣機構如平面配置般地構成，所以得到對於二軸方向可 容易且⑥精度檢測出照射到所希望被處理面的離子束角产 分佈的效果。 & 此外，精由申請專利範圍第5項之發明，由於前述屏蔽機 構如被配置前述開口部般地構成，前述開口部具有和血前 述複數個捕獲機構所形成的離子束捕獲面正交的中心轴為 同-中心轴’所以可使由前述運算處理機構所檢測出的離 子束角度分佈成為最佳形狀，藉此得到可確實評估在所希 望離子束處理位置_子束的指向性及配向性的效果。 此外，藉由申請專利範圍第6項之發明，由於前述複數個 捕獲機構的配置數如成為奇數般地構成，相可高精度導 出由前述運算處理機構所檢測出的前述離子束角度分佈的 極大值，藉此得到可高精度評估在所希望離子束處理位置 的離子束的向性及配向性的效果。 此外，藉由申請專利範圍第7項之發明，由於具備申請專 利範圍第1至6項中任一項所載之離子束分佈檢測裝置，所 以可μ現得到上述申請專利範圍第丨至6項的作用效果的離 子束配向處理裝置。 【圖式簡單說明】 85616.doc -24- 200413737 圖1為顯示為本發明第一實施 結構的方塊圖。 W離子束W檢測裝置 圖2為顯不為本於明楚 ^ ^ U) 的發明弟一實犯例的離子束分佈檢測裝置 、運算處理器結構的方塊圖。 圖3為顯示到檢測離子束發散的處理程序的流程圖。 圖4為說明料離子束分佈檢測裝置的離子束照射狀態 的模式圖。 圖5為顯示與離子束照射量對應的射束電流分钸之圖。 圖6為顯示由反褶合運算處理導出的離子束角度分佈之 圖。 九 圖7為顯π發散角度和配向膜異方向性的關係之圖。 圖8為顯示為本發明第二實施例的離子束分佈檢測裝置 結構的方塊圖。 圖9(a)至圖9(b)為說明由習知射束測量裝置測量的離子 束照射量分佈之圖。 2、 3、 4 5 6 7 20 元件符號之說明 、30 、8 、9 離子束分佈檢測裝置 法拉第杯群 抑制電極框 導電框 電流計 運算處理器 抑制電源 離子束照射裝置 85616.doc •25- 200413737 21、 21a〜21d 、21 離子束 50 射束測量裝置 61 A/D轉換器 62 控制部 63 記憶部 64 輸出部 65 輸入部 8a - 5卜 20L· - 215 法拉第杯 9a、 41、 30L· -315 開口部 Sgl 信號 85616.doc -26-…. ”W · ~“ The cleavage of the interstitial glands of the sharp knife. In addition, the ion beam alignment processing device that can perform the alignment processing of the ion beam alignment method on the alignment film of the liquid crystal display element can be used as the first implementation of the present invention. Example ion beam distribution detection device i. Here, the ion beam alignment processing device is configured as follows: it includes an ion beam irradiation device, an irradiation platform, and an ion beam distribution detection device 1, and the ion beam distribution detection device and the irradiation platform are free on the same plane. Plane driving, irradiating the ion beam emitted by the ion beam irradiation device at a desired emission angle to a desired processing position on the irradiation platform or the opening portion 41 of the ion beam distribution detection device. Therefore, the ion beam distribution detection device 1 can detect the irradiation The angular distribution of the ion beam to the opening 41 is then driven by the irradiation platform on which the crystal failure alignment film is mounted and the ion beam distribution detection device 丨 to drive the desired processing position on the irradiation platform and the position of the opening 4. The ion beam alignment processing device can detect the deviation of the desired processing position on the irradiation platform before the alignment processing. Beam azimuth angle θ, divergence and divergence angle ed, so the directivity and alignment of the ion beam at the desired processing position can be easily evaluated, and the liquid crystal alignment of the ion beam alignment method can be controlled uniformly while having a higher liquid crystal alignment Limiting force alignment film. Therefore, when this ion beam alignment processing device is used, the workmanship and production efficiency of liquid crystal alignment processing using the ion beam alignment method can be further improved in the production of liquid crystal display elements. 20- 200413737 (Consistent example) The person will explain the second embodiment of the present invention in detail. The first embodiment described above uses the Faraday cup group 2 with the Faraday cups 201 to 215 arranged in a row. The one-axis direction detects the ten-degree angle Θ, divergence, and divergence angle ⑼ of the pre-beam at the desired ion beam processing position, but this second embodiment uses a Faraday cup group having Faraday cups arranged in a grid pattern. Fig. 8 shows This is a block diagram of the structure of an ion beam distribution detection device according to a second embodiment of the present invention. The ion beam distribution detection device 30 has a Faraday cup group ^ instead of the first The Faraday cup group 2 of the ion beam distribution detection device of an embodiment has a suppression electrode frame 9 instead of the suppression electrode frame 3. Other structures are the same as those of the first embodiment, and the same symbols are attached to the same structure parts. The Faraday cup group 8 will The Faraday cup 8a is arranged in a grid with 5 rows and 5 columns, and the Faraday cups 8a of the Faraday cup group 8 are electrically connected to the galvanometer 5. In addition, the suppression electrode 9 has an opening 9a, which is connected to the Faraday cup group 8 Each Faraday cup 8a corresponds. Here, when the ion beam distribution detection device 30 is configured to correspond to a desired ion beam processing position and the opening portion 41, the ion beam distribution detection device 30 can simultaneously perform two-axis directions (for example, X and y axes). The azimuth angle Θ, divergence, and divergence angle Qd of the ion beam at the ion beam processing position are detected. This second embodiment uses a Faraday cup group having a Faraday cup arranged in a grid pattern, and simultaneously detects the biaxial directions in all directions. The azimuth angle, divergence, and divergence angle of the ion beam at the ion beam processing position is desired, so the directivity and distribution of the ion beam at this ion beam processing position can be more thoroughly evaluated. Resistance, ion beam irradiation can by this means readily optimized irradiation conditions. 85616.doc • 21-200413737 In addition, an ion beam alignment processing apparatus that can perform an ion beam alignment method on an alignment film of a liquid crystal display element can be used as the ion beam distribution detection apparatus 30 according to the second embodiment of the present invention. Here, this ion beam alignment processing device has the same structure as the ion beam alignment processing device provided with the above-mentioned ion beam distribution detection device 1, and can detect the ion beam irradiated to a desired processing position in two axes before the alignment processing. The azimuth angle θ, divergence, and divergence angle ed make it easier and more accurate to evaluate the directivity and alignment of the ion beam at the desired ion beam processing position, and to achieve uniform control of the liquid crystal alignment of the ion beam alignment method. Alignment film with high liquid crystal alignment restriction force. Therefore, when this ion beam alignment processing device is used, the workability and production efficiency of the liquid crystal alignment processing which can use the ion beam alignment method in the production process of the liquid crystal display device are further improved. In the first and second embodiments of the present invention, the mechanism of suppressing the generation of secondary electrons in the Faraday cup or pushing the generated secondary electrons back to the Faraday cup again is shown in the case of using a suppressing electrode frame, but the present invention is not This is also applicable to the case where the electrode plate is suppressed. In addition, the first and second embodiments of the present invention show a case where a conductive frame having one opening is used, but the present invention is not limited to this, and it can also be applied to a case where a conductive plate having one opening is used. In addition, the first and second embodiments of the present invention show a case where a plurality of Faraday cups are arranged, but the present invention is not limited to this, and can also be applied to a case where a plurality of linear electrodes are arranged and arranged instead of the Faraday cups. In addition, in the second embodiment of the present invention, a Faraday cup group 8 in which 25 Faraday cups 8a are arranged in a grid of 5 rows and 5 columns is used, but constitutes a Faraday Cup 85616.doc -22- 200413737 200413737 and at least 2 horizontally. Just the same, or the same. Faraday cups of group 8 have at least 2 rows in the vertical and the number of rows in the horizontal direction may not be the same. [Effect of the invention] Machine: Month: The invention of the scope of patent application β, because of the narrow shielding of the wall surface of the Γ :: Γ sub-beam Ion beams are passed through openings such as slits, and a plurality of capture mechanisms capture the ion beams that pass through the openings. The measurement mechanism measures the m of the amount of particles captured by the plurality of capture mechanisms to detect and irradiate the beam. It is hoped that the current split corresponding to the angular split of the ion beam on the surface to be processed can be used as a basis to obtain the effect of reducing the distribution of the ion beam by processing the photon. Refine this to realize an ion beam distribution detection device that can evaluate the directivity and alignment of the ion beam at the desired ion beam processing position, and use this ion beam distribution detection device to evaluate the directivity and alignment of the ion beam. Beam irradiation device, which can make the ion beam with good directivity and alignment easy, and it can be controlled under the condition that can be irradiated, so it can be easily controlled by uniform irradiation: crystal alignment, and at the same time, it can achieve alignment with higher limiting force of liquid crystal alignment. The ion beam of the film has the effect of further improving the workability and production efficiency of the liquid crystal alignment process using the ion beam alignment method in the production process of the liquid crystal display element. The dagger uses the invention in the second scope of the patent application, because the above-mentioned ion beam current analysis corresponding to the measurement result described by the calculation processing mechanism / measurement mechanism performs at least the calculation processing of the deconvolution integral based on the Gauss method, so that The effect of the aforementioned angular distribution of the ion beam can be easily and reliably detected. 85616.doc -23- 200413737 In addition, hunting consists of the invention in the scope of patent application No. 3, and the capture mechanism is configured as a row, so it can be easily and accurately inspected for one or two irradiation to the desired processing The effect of the distance distribution of the face. ^ In addition, according to the invention in the fourth scope of the patent application, since the aforementioned plurality of cymbals are structured like a plane arrangement, an ion beam irradiated to a desired surface to be processed can be easily detected with ⑥ accuracy in the biaxial direction. The effect of horny distribution. & In addition, the invention is the fifth invention in the scope of patent application. Since the shielding mechanism is configured as if the opening is configured, the opening has an orthogonal plane to the ion beam capture surface formed by the plurality of capture mechanisms. The central axis is the same as the central axis. Therefore, the angular distribution of the ion beam detected by the aforementioned arithmetic processing mechanism can be optimized to obtain the directivity and orientation of the sub-beam that can be reliably evaluated at the desired ion beam processing position. Sexual effect. In addition, according to the invention in the sixth aspect of the patent application, since the arrangement number of the plurality of capture mechanisms is formed as an odd number, the maximum value of the ion beam angular distribution detected by the calculation processing mechanism can be derived with high accuracy. Value, thereby obtaining the effect that the directivity and alignment of the ion beam at the desired ion beam processing position can be evaluated with high accuracy. In addition, with the invention claimed in item 7 of the scope of patent application, since the ion beam distribution detection device contained in any of the claims 1 to 6 of the scope of patent application is provided, μ can now obtain the above mentioned scope of patent applications The effect of the ion beam alignment processing device. [Brief description of the drawings] 85616.doc -24- 200413737 Fig. 1 is a block diagram showing the structure of the first embodiment of the present invention. W ion beam W detection device FIG. 2 is a block diagram showing the structure of an ion beam distribution detection device and an arithmetic processor, which is an example of the invention of the invention. FIG. 3 is a flowchart showing a processing procedure to detect the divergence of the ion beam. Fig. 4 is a schematic diagram illustrating an ion beam irradiation state of the material ion beam distribution detecting device. FIG. 5 is a graph showing a beam current split corresponding to an ion beam irradiation amount. Fig. 6 is a graph showing an ion beam angular distribution derived from a deconvolution operation process. Fig. 7 is a graph showing the relationship between the π divergence angle and the anisotropy of the alignment film. Fig. 8 is a block diagram showing the structure of an ion beam distribution detecting apparatus according to a second embodiment of the present invention. Figs. 9 (a) to 9 (b) are diagrams illustrating the distribution of the ion beam irradiation amount measured by a conventional beam measuring device. 2, 3, 4 5 6 7 20 Description of component symbols, 30, 8, 9 Ion beam distribution detection device Faraday cup group suppression electrode frame conductive frame galvanometer operation processor suppression power source ion beam irradiation device 85616.doc • 25- 200413737 21, 21a ~ 21d, 21 Ion beam 50 Beam measurement device 61 A / D converter 62 Control section 63 Memory section 64 Output section 65 Input section 8a-5b 20L ·-215 Faraday cup 9a, 41, 30L · -315 Opening Sgl signal 85616.doc -26-