TW200413550A - Improvement for vapor deposition method - Google Patents

Abstract

A kind of improvement for vapor deposition method is achieved by pressing powdery vapor deposition material into dense pellets or tablets at a predetermined pressure, temperature and time. Because the pressed vapor deposition material is denser compared with powder vapor deposition material, there is more vapor deposition material in terms of mass per unit volume. Furthermore, because the pressed vapor deposition material is more homogeneous and denser and its crystalline property is identical, heat transfer efficiency is increased and heating power is more stable.

Description

(1) [Technical field to which the invention belongs] The present invention is a process improvement of a vapor deposition material used for vapor deposition, and is mainly directed to powdery vapor deposition. [Prior art] Method improvement. In the mechanical industry, electronics, and materials used to impart certain characteristics to the semiconductor industry, in order to apply the film (a thin film) to the material, the surface of the material is formed by various methods in the process, generally 2, When this film is subjected to an atomic layer vapor deposition process, the deposition of an atom = specific film is called a vapor deposition process. Since the coating film is used, it is possible to obtain a coating film in which the thickness of the deposited particles is controlled by a person in a layer of 0 to form a structure and a function. The deposition of special thin films that can not be obtained in the balance state is currently the most popular surface treatment method for decorations, tableware, knives, and can be used for processing. It refers to the surface substrate of various metal materials, molds, semiconductor components, etc. On the surface, growth: two hard alloys, ceramic materials, and wafer stage to obtain beautiful wear-resistant, heat-resistant: the process of material-resistant film 'to, can: Γ process, whether there is a mechanism of chemical reaction, the knife is a physical vapor phase Deposition (Physicai): commonly known as physical vapor deposition and chemical vapor deposition = r: r: sition 'abbreviated CVD' is often called chemical vapor deposition. First, the single atoms of the evaporation material of the substrate formed by a series of complicated processes must dissipate the vertical momentum. The single atoms can be "adsorbed" on the substrate. These single atoms will form a thin film on the substrate surface. The single atom formed by the thin film formed by the chemical reaction will be diffused on the surface of the plate. 5 200413550 5. Description of the invention (2) The surface of the plate undergoes a diffusion movement. This phenomenon is called the "surface migration" of adsorption of single atoms. The process of atomic clusters is called "nucleation". After the atomic clusters have reached a certain size, they can continue to grow steadily. Therefore, small atomic groups will tend to aggregate with each other to form a larger atomic group to reduce the overall energy. The continuous growth of atomic groups will form "nuclear islands". The gaps between nuclear islands need to fill the atoms in order for the nuclear islands to join with each other to form a whole. A continuous film, but the atoms that cannot be bonded to the substrate will be detached from the substrate surface and become free atoms. This step is called atomic desorption. " The difference between physical vapor deposition (PVD) and chemical vapor deposition (cvd) is that the adsorption and desorption of physical vapor deposition (PVD) is physical attachment and desorption, while chemical vapor deposition (CVD) Adsorption and desorption are chemical adsorption and desorption reactions. "Deposition technology crystal", "doping method in the integrated round substrate deposition process, the main supply of steam ore state and this connection. When the operation is performed and the system is made of polycrystalline silicon, if the direct mass distribution in the remote crystal is made of the required true product material and the appropriate heat is conductive, the device can be deposited in a single film. The evaporation group in the film is used to raise the difference between the parameters of the phase resistance effect of the current source in the indoor, fixed-mount, or "semi-doped donors specially grown in the process", and one is called the trueness of vacancy. It is important that the current set by the steaming material leads to the non-crystal in the hanging snail. It is called the conductor film or the receiver, and does not contain oxygen. In order to be "the advantages of Lei, it can be composed of broken vapor deposition chambers, will be placed, will be with the outside, and the structure can be single crystal thin crystals by the crucible", it must have: precise quality control. ’And a straight pot that is being vaporized in a circle due to electricity, —

Page 6 200413550 V. Description of the invention (3) Until the melting point of the vapor deposition material is approached, the evaporation ability of the plating source will be very strong, and we can deposit the film in off-evaporation. Except for the above-mentioned vacuum evaporation, the method is often the same as the so-called electron beam evaporation on (EBE), the main difference is that the electron is limited to the heat of the evaporation material, so that the current evaporation under low pressure environment However, the material is filled with gaps. Therefore, in the vacuum state, if a beam is used to perform the evaporation on the surface of the evaporation layer, the surface of the film is extremely small. The void-making effect material has a limited amount of powder, and it is necessary to replace the ore deposit and open the door of the evaporation chamber once. After the evaporation material has to be finished, it must be time-consuming. [Content of the invention] The present invention also increases the vicinity of this. At the time, the solid-state vapor deposition 'on the surface of the substrate not far above the key source of these evaporated vapor deposition materials was used outside the law' for vapor deposition of high-temperature materials. The basic principle is the same as that of Electron Beam Evaporati. The above-mentioned vacuum evaporation is based on the electron beam evaporation method (ebe plating material is heated, and the heating range can be limited so that the former must not be deposited on the entire vapor deposition). τ Fill the crucible with the final vapor deposition material to achieve the purpose of vapor deposition. Heng = ii Mei, the effect of the thermal conductivity of each steamed material is not good, especially when it is not good. ", when plating The structure is relatively loose, so the number of times to replace the evaporation material is increased. In the early morning, the door of the evaporation chamber must be opened, and the vacuum is heated and vacuumed, and the vacuum is heated. ::: The probability of poor production process. The main purpose of Zha is to solve the above-mentioned shortcomings and avoid them. 200413550 V. Description of the invention (4) '------ The 2 in the present invention uses a predetermined pressure and reservation The temperature and the required ^ B, between the first, the powdery evaporation material is compacted into a dense shape, and the evaporation of the pressing 4 is completed. Material = At the time of evaporation, the pressed evaporation material is more φ + than the powdery material. Unit volume can hold more quality of vapor deposition material, so = less replacement of vapor deposition material is very helpful in saving operating time and reducing the chance of increasing process defect rate; and because of the evaporation material after pressing All dense There is no gap between the evaporation materials, because the gap does not have a good thermal conductivity effect. Even if the compact evaporation material is used after pressing, the heat conduction efficiency between the evaporation materials can be improved because of heat transfer ^ The increased efficiency makes the heat transfer faster, which helps to save energy on the heating traces, and because the compacted vapor-deposited material after pressing can control its crystalline properties during pressing, because the crystallized properties of the vapor-deposited material are consistent The heating power can be more stable, and the thickness of the film deposited during evaporation can be controlled more accurately. [Embodiment] The detailed description and technical content of the present invention will now be described in conjunction with the drawings: Please refer to the "Figure 1" Shown "is a schematic diagram of the manufacturing process of the present invention, as shown in the figure: The present invention is an improvement of a vapor deposition method. The powdered vapor deposition material i 0 is first pressed through a predetermined pressure, a predetermined temperature, and a required time. It becomes dense, and the vapor-deposited material 10 after the pressing is completed. During the vapor deposition, the vapor-deposited material 10 after the pressing is more dense than the powder, so 2 billion in the crucible chamber forging unit 21 can accommodate more of the volume of the mass of the vapor deposition material Shu square, and since the vapor deposition material 10 uniformly pressed compact, can improve the heat transfer efficiency

Page 8 200413550 V. Description of the invention (5), the heating power is more stable. The detailed steps of the improved evaporation method include: a) Take the original powdered evaporation material 10, and repeat it through a predetermined force. 1. Predetermine the degree and time required to press the powdered steam-bonded material 10, the predetermined pressure is 5 square inches), the temperature is 20 degrees Celsius to 120 degrees Celsius, and the time is 20 minutes to 60 minutes. Adjust according to the crystal form and compactness of the desired evaporation material 10 and the density of the evaporation material 10, and the compacted state can be granular or ingot ^ and b) Please refer to "Figure 2" "It is a schematic diagram of the evaporation of the present invention ', as shown in the figure: the compacted evaporation material 10 pressed into the crucible 21 in the benefit plating chamber 20 is packed in the step a, and the evaporation chamber 2 〇 includes a substrate 3 on which a thin film is formed by a vapor deposition method; and # uses a vacuum system 40 to draw air to make the evaporation chamber 20 into a vacuum state, =: the degree of vacuum in the empty state depends on the evaporation material! 〇Properties are adjusted with the properties of the substrate d) The evaporation material 1 in step b is heated by a heating device 50 10, the evaporation material in the crucible 10 is sublimated into single atoms to reach the substrate 30, the surface of the single atom plate 30 is moved or re-evaporated from the surface of the substrate 30, and the single atom is combined with the base T ^ to form a deposit. The deposit Grow and condense the thin film; ^ Team e) Complete the evaporation process and form the required thin film on the substrate 30. Material steps: iff material 10 is a metal, organic or inorganic material. 10% 'and the side substrate 30 is a silicon wafer, metal, organic or inorganic material

Page 9 200413550 V. Description of the invention (6) However, the above are only the preferred embodiments of the present invention. When the scope of the implementation of the present invention cannot be limited, that is, the equal changes made in accordance with the scope of the patent application for this creation And modification should still fall within the scope of this creation patent. 200413550 Brief description of the drawings [Simplified description of the drawings] Figure 1 is a schematic diagram of the manufacturing process of the present invention. Figure 2 is a schematic diagram of the evaporation of the present invention. [Figure No. Explanation] Press the vapor deposition material to make it dense ......... a Fill the vapor deposition material to the crucible .............. b Vacuum extraction ... ....... e Heating the steam bond material ............................................................................................................................ ......... e

Evaporation material ... 10 Evaporation chamber ... > 20 i # m .............: ........ 2i Substrate .............. 3 0 Vacuum System ... 50 Heating unit ... 50

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Claims (1)

200413550 VI. Scope of patent application [Scope of patent application] 1 · An improved vapor deposition method is to first compact the powdered vapor deposition material into a compact shape through a predetermined pressure, temperature and time, and then complete the pressing of the vapor bonding material. During vapor deposition, since the vapor-deposited material after pressing is denser than powder, more mass of vapor-deposited material can be accommodated per unit volume, and because the vapor-deposited material after pressing is uniform and dense, the heat conduction efficiency can be improved and the heating power can be more It is stable, and the evaporation step after the improvement of the evaporation method includes: a) taking the powdery vapor deposition material and pressing the powdery vapor deposition material into a dense shape through a predetermined pressure, temperature and time; b) going through the steps a. The vapor-bonding material of the manufacturing process is filled in the evaporation room, and the benefit room contains a substrate that needs to be evaporated to form a thin film; c) using a vacuum system to pump down the evaporation room into a vacuum bear, · d) — The heating device heats the vapor deposition material in step b, so that the vapor-forged material is sublimated into a single atom and reaches the substrate; " Eighth, slave / earth, person, 7 wm high & waist. 2 · Improvement of a vapor deposition method as described in item 申请 of the scope of patent application /, the vapor deposition material is a metal, organic or inorganic material 3. · A vaporization chain as described in item i of the scope of patent application = good The pre-pressing pressure is from MOM / square inch) to 50000 (Saki / flat), and it is adjusted according to the lattice form and density of the desired evaporation material and the properties of the evaporation material. T degree and does not affect 4 · According to a type of vapor deposition method described in item (1) of the scope of patent application, the predetermined temperature is 20 degrees Celsius to 120 degrees Celsius, which is further increased according to the required lattice form and compactness of $ _I and does not affect the properties of the vapor-bonding material. Material: 200413550 6. Scope of patent application 5. An evaporation method improvement as described in item 1 of the scope of patent application, wherein the predetermined time is 20 minutes to 60 minutes, depending on the lattice form of the desired evaporation material It can be adjusted to the degree of compactness and not affect the properties of the vapor deposition material. 6. An improvement of a vapor deposition method as described in item 1 of the scope of patent application, wherein the dense state can be granular or bonded. 7. Such as An improvement of a vapor deposition method described in the first patent application scope, The substrate is a silicon wafer, metal, organic or inorganic material. 8. An evaporation method improvement as described in item 1 of the scope of patent application, wherein the degree of vacuum in the vacuum state is adjusted according to the properties of the evaporation material and the properties of the substrate. Page 13