TW200412677A - Color mixing light emitting diode - Google Patents

Abstract

A color mixing light emitting diode (LED) is disclosed. The present invention is featured in that a first LED chip and a second LED chip emitting different colors of light are adhered to generate some other color of light, wherein the second LED chip is located on the first LED chip. The first LED chip can emit such as yellow light (or changing to red light), and the second LED chip can emit blue light (or changing to blue-green light), thereby making the present invention to emit white light. Moreover, the first LED chip can be a photoluminescence LED chip, wherein the first LED chip can be excited by the light emitted by the second LED chip to emit light, and then the light emitted by the second LED chip and the light emitted by the first LED chip can be mixed into some other color of light.

Description

200412677 V. Description of the invention (1) The technical field to which the invention belongs: The present invention relates to the structure of a light emitting diode (LED), in particular to a kind of light emitting diode that can emit different colors The structure of a mixed-color light-emitting diode that is stuck to produce other colored light. Prior technology: Regarding the structure and manufacturing method of color-mixing light-emitting diodes, those who are familiar with this technology have proposed several related documents. For example, Nichia Chemical Industries, Ltd. proposed a method using phosphors (U.S. Patent Publication No. 5,998, 925/6, 0 69, 440) to excite Ji Mingshi right through a blue light diode. Stone (Yttrium-Aluminum-Garnet; YAG) phosphor produces yellow light, which generates yellow light and mixes with the original blue light into white light. This method is to cover YAG fluorescent substance on the InGaN blue light crystal with a wavelength of 46 0nm, and then irradiate this fluorescent substance with a blue LED to generate yellow light with a wavelength of 5 5 5nm complementary to the blue light. The yellow light and blue light are mixed to obtain a white light output. Although this method has the advantage of lower cost, its luminous efficiency is poor (the light conversion efficiency of the YAG fluorescent substance is low), so high power output cannot be obtained. In addition, the blue light-emitting diode is prone to change in wavelength with temperature and operating current, which also deteriorates the luminous efficiency of γ A g (the light conversion efficiency of YAG fluorescent substances will change with the blue light-emitting diode wavelength ), So it is very difficult to achieve high output intensity and stable white light output. In addition, ORSAM Opto Semiconductors has proposed to package light emitting diodes of three primary colors of red, green and blue in one package.

Page 7 200412677 V. Description of the invention (2) Method for making it into white light. In this method, the wavelength and brightness of the three light-emitting monopoles need to be adjusted separately to obtain a more pure white, so it is not easy to control the light-emitting color. Also, because there are three independent light sources, color mixing may be uneven. In addition, the semiconductor materials of the light-emitting diodes of the three primary colors of red, green, and blue are extremely different from each other, so the design of the driving circuit also becomes extremely cumbersome and complicated, resulting in higher production costs. Summary of the Invention: In view of the shortcomings of conventional mixed-color light-emitting diodes in the background of the invention described above, it is an object of the present invention to provide a mixed-color light-emitting diode in which two light-emitting diodes of different wavelengths are stacked in series. The epitaxy structure can be changed by design to generate a large light emitting wavelength range. By designing the upper and lower light emitting diode electrode shapes (Pad) and chip size, different current spreading can be generated (Current Spreading). ) And different output power ratios (Output Power Ratio), so it can be tuned to produce a large and stable high-power lighting output with a wide range of luminous wavelengths and a wide range of color temperatures. Another object of the present invention is to provide a mixed-color light-emitting diode, which is driven by a constant current or a constant voltage, so that the output can be stabilized, and it is not easy to change the emission wavelength with temperature and operating current. Another object of the present invention is to provide a mixed-color light-emitting diode, in which the operating voltage of each module is, for example, about 6V (blue light 3-4V, yellow light 2-2 · 5V), so it is easy to use in existing 12V or 24V and other applications. Another object of the present invention is to provide a mixed-color light-emitting diode, in which each light-emitting diode can also be controlled by adjusting the relative area of each light-emitting diode.

200412677 V. Description of the invention (3) The brightness of the polar body can easily achieve the purpose of controlling the output wavelength. Yet another object of the present invention is to provide a mixed-color light-emitting diode, in which the mixed light of bonding upper and lower light-emitting diodes is symmetrical.

According to the above object of the present invention, the present invention provides a mixed-color light-emitting diode, which at least includes: a first electrode, the first electrode having a first electrical property; a first light-emitting diode wafer, located at the first electrode A second light-emitting diode wafer located on a portion of the first light-emitting diode wafer; a second electrode having a second electrical property and the second electrode located on the first portion of the other portion A light-emitting diode wafer; a third electrode, the third electrode having the first electrical property, and the third electrode is located on a part of the second light-emitting diode wafer; and a fourth electrode, the fourth electrode It has the second electrical property, and the fourth electrode is located on the second light-emitting diode wafer of another part. In addition, the first light-emitting diode wafer may emit, for example, yellow light or red-orange light, and the second light-emitting diode wafer may emit, for example, blue light.

According to the above object of the present invention, the present invention provides another mixed-color light-emitting diode, including at least: a first light-emitting diode wafer; a transparent adhesive layer on a first portion of one of the first light-emitting diode wafers; A first electrode, the first electrode having a first electrical property, and the first electrode being located on a second portion of a first light emitting diode wafer; a second electrode, the second electrode having a second electrical property And the second electrode is located on the third portion of one of the first light-emitting diode wafers; a second light-emitting diode wafer is located on the transparent adhesive layer, wherein a portion of the lower surface of the second light-emitting diode wafer It includes at least a third electrode having the first electrical property, and the third electrode is connected with the second electrical

Page 9 200412677 V. Description of the invention (4) Extreme contact. This colored light or red orange such as blue light or blue according to the present invention-the polar body, at least a layer, is located on the first sheet, and the second hair chip located on the transparent second light emitting diode part has a photon well structure. According to the diode of the present invention, at least, a first emitter, the first light of the second electricity, and the first electricity, which are in contact with each other; and on the wafer, and the diode wafer, the electrode, The fourth luminescent diode emits, for example, a yellow luminescent diode outside the body. The first luminescent diode wafer can emit, for example, ordinary light, and the second luminescent diode wafer can emit green light, for example. The above object, therefore, the present invention provides yet another color mixing light emitting device including a first light emitting diode wafer, a transparent adhesive light emitting diode wafer, a second light emitting diode crystal adhesion layer, and a first electrical property. An electrode is located on a part of the body wafer; and a second electrical electrode is located on another photodiode wafer. In addition, the first light-emitting diode-excited monopolar wafer described above includes at least multiple weights, so the present invention provides yet another color-mixed light-emitting diode. A first electrode includes a first electro-optic diode. An electrode body wafer is located on the first electrode; one electrode has a second electrical property, and the other one electrode body wafer ... the first electrode is located on a part of the second electrode, the third electrode is located on the third electrode, and the second electrode is located on the first electrode. ^ The adhesive layer is located on the other two electrodes i and the first light-emitting diode transparent adhesive layer on the other part of the second electrode a is about the same height as the third electrode; a second light-emitting layer is on the transparent adhesive layer and the third electrode And a fourth, having the above-mentioned "electrical" and this fourth electrode is located on the first day: 1 In addition, the first light-emitting diode wafer can be light (584nm) or red-orange light (61〇nm) And the first chip can emit, for example, blue light (48nm) or change to blue-green

Page 10 200412677 V. Description of the invention (5) Light (4 91nm) 〇 Embodiment: The present invention relates to a mixed-color light-emitting diode that sticks a plurality of light-emitting diodes that can emit different colors to produce other colors of light. structure. Please also refer to the top views of the yellow light-emitting diode and the blue light-emitting diode in the mixed-color light-emitting diode of a preferred embodiment of the present invention shown in FIGS. 1A and 1B respectively. The yellow light-emitting diode 11 shown in FIG. 1A further has a positive electrode 120 ′, and the blue light-emitting diode 13 shown in FIG. 1 B has a negative electrode 14 0 and a positive electrode. 150. Please refer to FIG. 2A for a top view of a color mixing light emitting diode according to a preferred embodiment of the present invention. The mixed-color light-emitting diode system in FIG. 2A uses transparent glue (not shown) to stick the blue light-emitting diode 13 0 in FIG. 1 B on the yellow light-emitting diode no in FIG. 1 A. produce. In addition, the positive electrode 1 2 0 on the yellow light-emitting diode n 0 and the negative electrode 1 40 on the blue light-emitting diode 130 are electrically connected by a connection line 16 60, so that they form a single circuit in series. . In addition, the transparent adhesive used has high light transmittance, high temperature resistance, and excellent thermal conductivity, which is suitable for high power operating conditions. As for the material of the blue light-emitting diode 1 30, for example, a gallium nitride (B A1G a I η NA s) series, and the material of the yellow light-emitting diode 11 0, for example, a phosphorous indium gallium (A1GaInPAs) )series. Furthermore, the negative electrode of the yellow light-emitting diode 110 is located on the back of the wafer (not shown in Figures i A and 2 A ', please refer to Figure 2 B). After bonding, the mixed-color light-emitting diode has the advantage of being symmetrical. Please refer to FIG. 2B for a schematic front view of a mixed-color light emitting diode according to a preferred embodiment of the present invention. Mixed-color light-emitting diode shown in Figure 2B

Page 11 200412677 V. Description of the invention (6) The bottom layer is the negative electrode 125 ', which is the negative electrode of the yellow light emitting diode 110 on it. As for the blue light emitting diode 130, it is located on one part of the yellow light emitting diode 11o, and the positive electrode 12o of the yellow light emitting diode 110 is on the other part of the yellow light emitting diode n0. . In addition, the negative electrode 14 of the blue light-emitting diode 130 is located on a part of the blue light-emitting diode 130 and the positive electrode 15 of the blue light-emitting diode 130 is located. The other part of the blue light emitting diode is 130. In addition, as described above, the positive electrode 1 2 0 on the yellow light-emitting diode 110 and the negative electrode 1 4 0 on the blue light-emitting diode 130 are electrically connected by the connection line 160. Therefore, a single circuit is connected in series. Therefore, the light emitted by the yellow light-emitting diode 110 can be divided into two parts: one is the simple yellow light 210; the other is the yellow light 2 1 2 (blue light-emitting diode) that passes through the blue light-emitting diode. The energy gap of 1 3 0 is larger than the energy gap of yellow light emitting diode 11 0). Therefore, the yellow light 2 1 2 passing through the blue light-emitting diode can be mixed with the blue light 220 emitted from the blue light-emitting diode 130 into a white light 230. As for the light-emitting area of the mixed-color light-emitting diode of one of the above-mentioned preferred embodiments of the present invention, as shown in FIG. 3, the yellow light area 3 0 2 and the blue light area 304 are respectively shown, which indicate the yellow light emission that is bonded. The mixed light emitted by the diode 11 and the blue light-emitting diode 130 is symmetrical. In the embodiment shown in FIGS. 2A and 2B, a blue light-emitting diode 130 having a wavelength of 480 nm and a yellow light-emitting diode 11 having a wavelength of 584 nm can be used. After the etching and metal evaporation processes are performed, the blue light emitting diode 130 is cut into a size of 40mi lx 4Omi 1, and the yellow light emitting diode 11 is cut into 40mi 1 x 8Omi 1 and a high thermal conductivity is used. The transparent glue adheres the blue light-emitting diode 130 to the yellow light-emitting diode 110. That is, in Figure 2A, the width 1 8 0

Page 12 200412677 V. Description of the invention (7) is 40mil, width 170 is 80mU, 20mil. After the bonding is completed, use; 190 and width 200 are both 弁 -pole 俨 M ^ using a wire bonding machine to connect the wire 1 6 0 to the blue light-emitting body 130 the negative electrode 140 is electrically known as the positive electrode 120, Make it an electric contact 1 connected to the bee light emitting diode #m J; ί f · circuit module. The power supply is supplied from the negative electrode 1 2 5 of the blue light-emitting diode and the yellow light-emitting diode, thus forming a module of 6 v ^ 9 v dip, ，, uv and 丄 zv to facilitate thunder. . In addition, you can adjust the blue light emission by adjusting the width of ^ ^ Zhi Po Ming Zhi, > 々 *, Zhiyou Polar Body 130 (also can be changed to wavelength 49 Inin blue green first) 1 8 0 # 丄 _ ^ Color light-emitting diode 11 (can also be changed to wave = degree / upper by adjusting the yellow J narrow horse wavelength 610nm red orange light) width of 19 or width of 20 to adjust its output intensity. Then, you can adjust the relative grain size as needed to adjust the different light output ratios (〇utput p〇wer 7mil to 200mil). The output power of the upper and lower grains and the output of the wavelength and color temperature range to be adjusted will determine the two crystals. The size of the particles. In the embodiments shown in FIG. 2A and FIG. 2B, a blue light emitting diode 1 30 and a yellow light emitting diode 1 1 0 having a wavelength of 5800 nm can also be used. After the manufacturing process of the blue light emitting diode 1 30 is completed, it is adhered to the yellow light emitting diode 110 and then subsequent processes such as cutting are performed. The electrodes in Figure 2B can be used together with the opposite electrical properties and still be It is within the scope of application of the present invention. Please refer to FIG. 4 for the mixed color light emission of another preferred embodiment of the present invention.

Rat ίο) and wavelength output. Generally, the length and width of the upper and lower die can be viewed from the front view of the diode. The bottom layer in Figure 4 is A 1 Gal nP As yellow light emitting diode 3 1 0. As for the transparent adhesive layer 39 (such as silicon dioxide) is located on the first part of one of AlGalnPAs yellow light-emitting diodes 31 0; the positive electrode 320 of A 1 Gal nP As yellow light-emitting diodes 31 0 is located

Page 13 200412677 V. Description of the invention (8) A 1 Gal nP As yellow light emitting diode 310 on the second part; and A1 Gal nP As yellow light emitting diode 310 negative electrode 32 5 is located on A 1 Gal One of the nP As yellow light emitting diodes 310 is on the third part. In addition, the BA1 Gal nNAs blue light-emitting diode 3 3 0 is located on the transparent adhesive layer 3 9 0, wherein a part of the lower surface of the BAlGalnNAs blue light-emitting diode 33 0 has a positive electrode 350 and the positive electrode 35 0 is in contact with the negative electrode 32 5 of the AlGalnPA s yellow light-emitting diode 3 10. In addition, the negative electrode 3 4 0 of the BA1 Gal nNAs blue light emitting diode 3 3 0 is located on the transparent adhesive layer 3 9 0. Therefore, by

The light emitted by A 1 Gal nP As yellow light emitting diode 310 can be divided into two parts: one is pure yellow light (not shown); the other is yellow light 412 passing through the blue light emitting diode. Therefore, the yellow light 4 12 passing through the blue light-emitting diode can be mixed with the blue light 420 emitted from the BA1 Gal nNAs blue light-emitting diode 33 0 into a white light 430. Furthermore, the above-mentioned AlGalnPAs yellow light-emitting diode 310 may be replaced by other types of light-emitting diode wafers that can emit red-orange light, and the BAlGalnNAs light-emitting diode 330 may be replaced by blue-green light, which may also make the present invention The mixed color light emitting diode emits white light.

In the embodiment of FIG. 4 above, BA 1 G a I η NA s blue light-emitting diodes of about 4 80 nm and AlGalnPA s yellow light-emitting diodes of about 5 8 4 nm can be used. . After the rice carving and metal evaporation process are completed, the BA1GaInNAs blue light-emitting diode 3 3 0 is cut into a size of 40 mi lx 4 0 mi 1, and A 1 G a I η PA s yellow light-emitting diode 310 was cut into 40mi lx 80mi 1. Then, a highly conductive metal conductive material (not shown) is used to bond the negative electrode 32 5 of Ai Gal nP As yellow light-emitting diode 310 and the positive electrode 350 ° of BAlGalnNPAs blue light-emitting diode 350. The power source is from Negative charge of BAlGalnNPAs blue light-emitting diode 330

Page 14 200412677 V. Description of the invention (9) The electrodes 3 40 and the positive electrode 3 0 2 of AlGalnPAs yellow light-emitting diode 310 are supplied, thus forming a 6 V or 12 V module for each group to facilitate the use of the circuit. In addition, the output intensity can be adjusted by adjusting the width of BA1 Gal nNPAs blue light-emitting diode 330 (also blue-green), or by adjusting AlGalnPAs yellow light-emitting diode 3 1 0 (also red ) To adjust its output intensity. Then, the relative grain size can be adjusted as needed to adjust the wavelength output and mix the white light. Please refer to FIG. 5 for a schematic front view of a mixed-color light-emitting diode according to another preferred embodiment of the present invention. The bottom layer in FIG. 5 is a light-emitting diode 51 with a red-to-yellow light-excitation structure. The light-emitting diode 51 with a red-to-yellow-light-excitation structure includes a multiple quantum well 5. 1 2 structure. Therefore, a light-emitting diode 5 1 0 with a red-to-yellow light-excitation structure need not have a positive or negative electrode connected to an external power source 6 3 0. That is, the two electrodes of the power supply 6 3 0 are electrically connected to the positive electrode 5 5 0 and the negative electrode 540 of the 8 1 (5 & 1118 "31) blue light emitting diode 5 30. Therefore, the AlGalnBNAsP blue The blue light 62 emitted from the color light emitting diode 53 is used to excite the light emitting diode 51 with red to yellow light excited structure, and the light emitting diode 510 with red to yellow light excited structure is emitted red to yellow light. 61〇, and then mixed with blue light 62 0 into purple to white light. In addition, A1GaInMAsp blue light-emitting diode 530 and red-to-yellow light-emitting diode 51 0 with a transparent adhesive layer 5 9 0 (Such as transparent thermally conductive adhesive) to be adhered. Furthermore, it is worth mentioning that the electrodes in FIG. 5 can be replaced with opposite electrical properties together and still fall within the protection scope of the present application. Another preferred implementation Please refer to the present invention 200412677 as shown in Figure 6 for the mixed-color light emission of the example. V. Description of the Invention (ίο)

Front view of the diode. The negative electrode 725 is located on the lower surface of the A1 Gain As P yellow light emitting diode 710 in FIG. 6, and the positive electrode 72 0 of the AlGalnAsP yellow light emitting diode 7 1 0 is located on the A 1 Ga I nAsP yellow light emitting diode. Part of the body 7 1 0 on the surface. As for the negative electrode 74 0 of the A 1 Gal nBN A sP blue light-emitting diode 730, it is located on the positive electrode 72 0 and is in contact with the positive electrode 72 0. In addition, a transparent adhesive layer 790 (for example, silicon dioxide or transparent thermal adhesive) is located on the other part of the AlGalnAsP yellow light-emitting diode 710, and the upper surface of the transparent adhesive layer 790 is about the same as the upper surface of the negative electrode. Same height. As for the two electrodes of the power supply 8 3 0, they are electrically connected to the positive electrode 75 0 of the 3130 blue light emitting diode 73 0 and the negative electrode 725 of the AlGalnAsP yellow light emitting diode 710. Therefore, , A1 Gal nBNAsP blue light emitting diode 73 0 blue light 82 0 can be mixed with yellow light 810 emitted by AlGalnAsP yellow light emitting diode 710 into white light. Furthermore, the above A1 Gal nP As yellow light emitting diode 71 〇 It can also be replaced by other types of light-emitting diode wafers that emit red-orange light, and BAlGalnNPAs light-emitting diodes 8 0 can be replaced by blue-green light-emitting diodes, thus allowing the mixed-color light-emitting diodes of the present invention to emit light. White color light. Furthermore, it is worth mentioning that the electrodes in FIG. 6 can be used together with opposite electrical properties and still fall within the protection scope of the present application.

Please refer to FIG. 7 for a schematic front view of a mixed color light emitting diode according to another preferred embodiment of the present invention. The bottom layer in FIG. 7 is a light-emitting diode 910, which is a photodiode with a light-excitation structure. The structure includes a yellow-green light-excitation multiple quantum well 9 1 2 and red light. Excited multiple quantum well 9 i 4 structure. Therefore, the light-emitting diode 910 with a light-excited structure does not need to have a positive or negative electrode connected to an external power source (not shown). That is, the two power sources of the external power supply

Page 16 200412677 V. Description of the invention The (π) pole can be electrically connected to the positive electrode 9 3 0 and the negative electrode 9 4 0 of the blue-green light emitting diode 9 2 0, respectively. Therefore, the blue-light emitting diode 9 2 0 emitted by the blue-green light-emitting diode 9 2 0 can be used to excite the light-emitting diode 9 1 0 having a light-excitation structure, so that the light-emitting diode 9 1 0 having a light-excitation structure can be emitted. Red light 9 5 0 and yellow-green light 9 6 0, and then mixed with blue light 9 7 0 into white light 9 8 0. In summary, one advantage of the present invention is to provide a mixed-color light-emitting diode, in which light emitting diodes of two different wavelengths are stacked in series, thereby generating a large light-emitting wavelength range, and thus the temperature range can be adjusted. Wide and stable high power lighting output.

Another advantage of the present invention is to provide a mixed-color light-emitting diode, which is driven by a constant current, which can stably rotate the wheel, and it is not easy to change the emission wavelength with the temperature and operating current. Another advantage of the present invention is to provide a mixed-color light-emitting diode, in which the operating voltage of each module is, for example, about 6V (blue light 3-4V, yellow light 2-2. 5V), so it is easy to use in the existing 12V or 24V and other applications.

Another advantage of the present invention is to provide a mixed-color light-emitting diode, in which the brightness of each light-emitting diode can also be controlled by adjusting the relative area of each light-emitting diode, so that the output wavelength can be easily controlled. Purpose. Another advantage of the present invention is to provide a mixed-color light-emitting diode, in which the mixed light of bonding upper and lower light-emitting diodes is symmetrical. As understood by those familiar with this technology, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. ’

Page 17 200412677 Brief Description of Drawings Figure 1A is a top view of a yellow light-emitting diode in a mixed-color light-emitting diode according to a preferred embodiment of the present invention; Figure 1B is a view showing the light-emitting diode of the present invention. Top view of a blue light-emitting diode in a mixed-color light-emitting diode in a preferred embodiment; FIG. 2A is a top view of a mixed-color light-emitting diode in a preferred embodiment of the present invention; FIG. 2B This is a schematic view of a mixed-color light-emitting diode according to a preferred embodiment of the present invention.

FIG. 3 is a schematic view showing a light-emitting area of a mixed-color light-emitting diode according to a preferred embodiment of the present invention; FIG. 4 is a front-view view of a mixed-color light-emitting diode according to another preferred embodiment of the present invention; Intent, FIG. 5 is a schematic view showing a mixed color light emitting diode according to another preferred embodiment of the present invention, and FIG. 6 is a schematic view showing a mixed color light emitting diode according to another preferred embodiment of the present invention. It is not intended, and FIG. 7 is a schematic front view of a mixed color light emitting diode according to another preferred embodiment of the present invention.

Drawing number comparison description: 11 0 yellow light emitting diode 1 2 0 positive electrode 12 5 negative electrode 130 blue light emitting diode 14 0 negative electrode 150 positive electrode 16 0 connecting line 170 width

Page 18 200412677 Schematic description 180 width 2 0 0 width 21 2 yellow light passing through the blue light emitting diode 2 2 0 blue light 3 0 0 mixed color light emitting diode 3 0 4 blue light area 310 AlGaInPAs yellow light emitting diode 3 2 0 positive electrode 3 3 03 8 108111 reviewer 3 blue light emitting diode 1 3 4 0 negative electrode 3 9 0 transparent adhesive layer 41 2 yellow light passing through the blue light emitting diode 420 blue light 5 1 0 with red Light to yellow light burst structure 512 multiple quantum wells 5 3 (^ 16311 ^ "3? Blue light emitting diode $ 540 negative electrode 5 9 0 transparent adhesive layer 6 2 0 blue light 710AlGaInAsP yellow light emitting diode 7 2 0 positive electrode 73 (^ 16311 ^ "3? Blue light emitting diode 1 740 negative electrode 7 9 0 transparent adhesive layer 19 0 width 2 10 yellow light 23 0 white light 3 0 2 yellow light area 32 5 negative electrode 3 5 0 positive electrode 430 white light Photodiode 5 5 0 Positive electrode 6 1 0 Red to yellow 6 3 0 Power source 72 5 Negative electrode 7 5 0 Positive electrode 8 10 Yellow light

200412677 Brief description of the diagram 8 2 0 Blue light 9 1 0 Light-emitting diode with light-excited structure 9 1 2 Yellow-green light excited multiple quantum wells 9 2 0 Blue-green light-emitting diode 94 0 Negative electrode 9 6 0 Green light 98 0 White light 8 3 0 Power supply 9 1 4 Red light excites multiple quantum wells 9 3 0 Positive electrode 9 5 0 Red light 9 7 0 Blue light

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Claims (1)

200412677 6. Scope of patent application 1. A mixed light emitting diode (Light Emitting Diode; LED), at least comprising: a first electrode having a first electrical property; a first light emitting diode chip, Located on the first electrode; a second light-emitting diode wafer, located on a portion of the first light-emitting diode wafer, a second electrode, the second electrode having a second electrical property, and the second electrode Located on the first light emitting diode wafer in another part; A third electrode, the third electrode has the first electrical property, and the third electrode is located on a part of the second light emitting diode wafer; and a fourth electrode, the fourth electrode has the second electrical property And the fourth electrode is located on the second light-emitting diode wafer in another part. 2. The mixed-color light-emitting diode according to item 1 of the patent application scope, wherein the first light-emitting diode wafer emits yellow light. 3. The mixed-color light-emitting diode as described in item 1 of the scope of the patent application, wherein the material of the first light-emitting diode wafer is an AlGalnPAs array. 4. The mixed-color light-emitting diode according to item 1 of the patent application scope, wherein the second light-emitting diode wafer emits blue light. 5. The mixed-color light-emitting diode as described in item 1 of the patent application scope, wherein Page 21 200412677 6. The scope of the patent application scope The second light-emitting diode wafer is made of gallium nitride 6. The mixed-color light-emitting diode described in item 1 of the scope of patent application, which also includes a connection line for electricity The second electrode and the third electrode are sexually connected. 7. The mixed-color light-emitting diode according to item 1 of the scope of the patent application, wherein the first light-emitting diode wafer emits red-orange light. 8. — a mixed color light emitting diode, including at least: A first light-emitting diode wafer; a transparent adhesive layer on a first portion of the first light-emitting diode wafer; a first electrode, the first electrode having a first electrical property, and the first electrode Located on a second portion of one of the first light emitting diode wafers; a second electrode having a second electrical property, and the second electrode is located on a third portion of one of the first light emitting diode wafers Partly; and a second light-emitting diode wafer located on the transparent adhesive layer, wherein a part of the lower surface of the second light-emitting diode wafer includes at least a third electrode having the first electrical property, and the The third electrode is in contact with the second electrode. 9. The mixed-color light-emitting diode according to item 8 of the scope of patent application, wherein the first light-emitting diode wafer emits yellow light. 10. The mixed-color light-emitting diode according to item 8 in the scope of patent application, wherein the Page 22 200412677 VI. The scope of patent application The material of the first light-emitting diode wafer is aluminum indium gallium phosphide (A1GaInPAsX ^, column. 1 1) The mixed-color light-emitting diode according to item 8 of the scope of patent application, where The first light-emitting diode wafer emits blue light. 1 2 The mixed-color light-emitting diode as described in item 8 of the patent application scope, wherein the material of the second light-emitting diode wafer is gallium nitride (BA1GaInNpAs) * Column. 1 3 · The mixed-color light-emitting diode as described in item 8 of the scope of the patent application, wherein the material of the transparent adhesive layer is broken silica. 1 4 · The mixed-color light-emitting diode as described in the scope of the patent application in item 8 A polar body, wherein the first light-emitting diode chip emits red light. 1 ··· A mixed-color light-emitting diode includes at least: a first light-emitting diode chip; a transparent adhesive layer located on the first On a light-emitting diode wafer; a second light-emitting diode wafer on the transparent adhesive layer; a first electrical electrode on a portion of the second light-emitting diode wafer; and a second electrical electrode In another 0 on the second light emitting diode wafer Page 23 200412677 6. Scope of patent application 1 6. The mixed-color light-emitting diode according to item 15 of the scope of patent application, wherein the first light-emitting diode wafer is a photo-excitation light-emitting diode wafer. 17 · The color mixing light emitting diode according to item 16 of the scope of patent application, wherein the first light emitting diode wafer includes a multiple quantum well structure. 1 8. The mixed-color light-emitting diode according to item 17 of the scope of patent application, wherein the light-emitting range of the first light-emitting diode wafer is red to yellow. 19. The mixed-color light-emitting diode according to item 16 of the scope of patent application, wherein the first light-emitting diode wafer includes two multiple quantum well structures. 20. The mixed-color light-emitting diode according to item 19 of the scope of patent application, wherein the two multiple quantum well structures emit yellow-green light and red light, respectively. 2 1. The mixed color light-emitting diode according to item 15 of the scope of patent application, wherein the transparent adhesive layer is a transparent thermally conductive adhesive. 2 2. The mixed-color light-emitting diode according to item 15 of the scope of patent application, wherein the second light-emitting diode chip emits both blue light and blue-green light 2 3. According to item 15 of the scope of patent application In the mixed color light emitting diode, the material of the second light emitting diode wafer is AlGalnBNAsP. Page 24 200412677 VI. Application scope 2 4. A mixed-color light-emitting diode at least includes: a first electrode, the first electrode having a first electrical property; a first light-emitting diode chip, which is located in the On a first electrode; a second electrode having a second electrical property, and the second electrode being located on a part of the first light emitting diode wafer; a third electrode having the third electrode First electrical property, and the third electrode is located on the second electrode and is in contact with the second electrode; A transparent adhesive layer is located on the first light-emitting diode wafer in another part, and the transparent adhesive layer is about the same height as the third electrode; a second light-emitting diode wafer is located on the transparent adhesive layer and the first electrode; Three electrodes; and a fourth electrode having the second electrical property, and the fourth electrode is located on the second light emitting diode wafer. 2 5. The mixed-color light-emitting diode according to item 24 of the scope of patent application, wherein the first light-emitting diode wafer emits yellow light. 2 6. The mixed color light-emitting diode according to item 24 of the scope of patent application, wherein the material of the first light-emitting diode wafer is AlGalnAsP. 27. The mixed-color light-emitting diode according to item 24 of the scope of the patent application, wherein the second light-emitting diode wafer emits blue light. Page 25 200412677 6. Scope of patent application 28. The mixed color light-emitting diode as described in item 24 of the scope of patent application, wherein the material of the second light-emitting diode wafer is AlGalnAsP. 29. The color mixing light-emitting diode according to item 24 of the scope of patent application, wherein the transparent adhesive layer is a transparent thermally conductive adhesive. 30. The mixed-color light-emitting diode according to item 24 of the scope of patent application, wherein the first light-emitting diode wafer emits yellow light. Page 26