TW200412474A - Exposure device and its method for manufacturing color filters - Google Patents

Exposure device and its method for manufacturing color filters Download PDF

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Publication number
TW200412474A
TW200412474A TW92100728A TW92100728A TW200412474A TW 200412474 A TW200412474 A TW 200412474A TW 92100728 A TW92100728 A TW 92100728A TW 92100728 A TW92100728 A TW 92100728A TW 200412474 A TW200412474 A TW 200412474A
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substrate
photoresist
exposure
receiving area
light
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TW92100728A
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Chinese (zh)
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TWI276921B (en
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Chin-Lung Ting
Chun-Bin Wen
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Chi Mei Optoelectronics Corp
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention provides a photoresist coating and exposure method, which includes the steps of: first providing a substrate; then providing a photoresist coating device for coating plural strip photoresist regions on the substrate; next, providing an exposure device including a light source to generate light for exposure and a mask having a predetermined pattern and disposed between light source and the substrate; and performing an exposure procedure on the plural strip photoresist regions. The predetermined pattern on the mask is transferred to be a strip exposure pattern on the substrate by a relative movement between the substrate and the mask.

Description

200412474 五、發明說明α) - 【發明所屬之技術領域】 本發明是有關於一種曝光裝置及一種光阻塗佈及曝光 的方法,且特別是有關於一種應用在製作液晶顯示面板之 彩色濾光鏡(color filter)的曝光裝置及其方法。 【先前技術】 薄膜電晶體平面顯示器,特別是薄膜電晶體液晶顯示 器(以下簡稱TFT-LCD),主要是利用成矩陣狀排列的薄膜 電晶體,配合適當的電容、轉接墊等電子元件來驅動液晶 像素,以產生豐富亮麗的圖形。由於TFT-LCD具有外型輕 薄、耗電量少以及無輻射污染等特性,因此被廣泛地應用 在筆記型電腦(notebook)、個人數位助理(PDA)等攜帶式 資訊產品上,甚至已有逐漸取代傳統桌上型電腦之CRT監 視器的趨勢。 傳統的TFT-LCD基本上包含有一下基板,其上具有許 多排列成陣列的薄膜電晶體、像素電極(p i xe 1 electrode)、互相垂直交錯(orthogonal)的掃瞄線(scan or gate line)以及訊號線(data or signal line)、一 有彩色濾光鏡(co lor f i 1 ter )的上基板、以及填充於下基 板與上基板之間的液晶材料,其中上基板與下基板可為透 明的玻璃基板。而在TFT-LCD所使用的材料中,彩色濾”''光 鏡的成本約佔三分之一。一般而言,彩色濾光鏡的製作是 先在下基板塗佈負光阻材料,然後經過曝光及顯影製程 形成。由於目前所使用的光罩尺寸過大,因此必須花費大200412474 V. Description of the invention α)-[Technical field to which the invention belongs] The present invention relates to an exposure device and a photoresist coating and exposure method, and more particularly to a color filter used in the manufacture of a liquid crystal display panel. Mirror (color filter) exposure device and method. [Previous technology] Thin-film transistor flat-panel displays, especially thin-film transistor liquid crystal displays (hereinafter referred to as TFT-LCD), are mainly driven by thin-film transistors arranged in a matrix, with appropriate capacitors, transfer pads and other electronic components to drive LCD pixels to produce rich and bright graphics. TFT-LCD is widely used in portable information products such as notebooks and personal digital assistants (PDAs) due to its thin and light appearance, low power consumption, and no radiation pollution. The trend to replace traditional desktop computer CRT monitors. A conventional TFT-LCD basically includes a lower substrate having a plurality of thin film transistors arranged in an array, pixel electrodes (pi xe 1 electrodes), scan lines or scan lines that are orthogonal to each other (scan or gate lines), and A signal line (data or signal line), an upper substrate with a color filter (color fi 1 ter), and a liquid crystal material filled between the lower substrate and the upper substrate, wherein the upper substrate and the lower substrate may be transparent Glass base board. Among the materials used in TFT-LCDs, the cost of color filters is about one-third. Generally, color filters are manufactured by coating a negative photoresist material on the lower substrate and then passing The exposure and development process is formed. Because the size of the photomask currently used is too large, it must be expensive

200412474 五、發明說明(2) 筆的成本在製作光罩上。而目前市場上TFT-LCD的競爭激 廠商皆盡全力在降低製作成本,以降低售價來吸 引扁費者,因此如何減小光罩尺寸便成為可降低成本 向之一。 请參照第1圖與第2圖,第【圖與第2圖為習知製 ^面板的曝光裝置之示意圖。一般而言,第1圖為習知曰曰 衣作液晶顯示面板中彩色濾光鏡的曝光裝置,而第2 :知製作_液晶顯示面板中薄膜電晶體基板之曝光裝置': 1圖所示 曝光裝置10包含有一固定不動之光源丨2、 一光罩14位於光源12下方以及一基板16位於光罩14下方, 光:14與基板16的大小相當。其中基板16可為-玻璃 :反,、上並没有黑色條紋(black matrix, BM)(未顯 ί 用η Γ提昇LCD對比以及防止TFT元件產生光漏電流盥 遮=CD頌不時的厂些斜漏光。此外,基板16上還塗佈有 一、=阻層並覆蓋住黑色條紋,其中負光阻層係用來 彩色濾光鏡上的R/G/B色層。 … 然後進行一曝光程序,以將光罩14上的預定圖宰轉移 上之負光阻層。接著進行一顯影製程, f f =之負光阻層。重複前述之曝光及顯影製程數 -人,衫色濾光鏡上的R/G/B色層便可形成於基板16之上。 光;2是同時地固定光罩14與基板16不動,以 使先源12較長&間且全面地照射到整個光叫,進而將光 罩14上的預定圖案完整地轉移至基板16上之負光阻声: 曝光程序係採用-近接式(pr〇ximity)曝光技術,其曰中:200412474 V. Description of the invention (2) The cost of the pen is to make a photomask. At present, the competition of TFT-LCD manufacturers in the market is trying their best to reduce the production cost and lower the selling price to attract flat users. Therefore, how to reduce the size of the mask has become one of the ways to reduce costs. Please refer to FIG. 1 and FIG. 2. [FIG. 2 and FIG. 2 are schematic diagrams of an exposure device for a conventional panel. Generally speaking, the first picture is a conventional exposure device for a color filter in a liquid crystal display panel, and the second is known as the exposure device for a thin-film transistor substrate in a liquid crystal display panel. The exposure device 10 includes a fixed light source 2, a photomask 14 located below the light source 12, and a substrate 16 located below the photomask 14. The light: 14 is equivalent to the size of the substrate 16. The substrate 16 can be-glass: reverse, without black matrix (BM) (not shown) using η Γ to improve LCD contrast and prevent TFT elements from generating light leakage current. Oblique light leakage. In addition, a resist layer is coated on the substrate 16 to cover the black stripes. The negative resist layer is used for the R / G / B color layer on the color filter.… Then an exposure process is performed. To transfer the negative photoresist layer on the predetermined image on the photomask 14. Then carry out a development process, ff = negative photoresist layer. Repeat the aforementioned exposure and development process number-person, on the shirt color filter The R / G / B color layer can be formed on the substrate 16. The light; 2 is to simultaneously fix the photomask 14 and the substrate 16 at the same time, so that the source 12 is longer & Then, the predetermined pattern on the photomask 14 is completely transferred to the negative photoresistance sound on the substrate 16: The exposure procedure is based on -proximity exposure technology, which is:

第6頁 200412474 五、發明說明(3) 罩14與基板16之間距g約冬100〜200微米(//m)。其中,光罩 1 4之大小係與基板1 6之大小約略相等。 如第2圖所示,一曝光裝置20包含有一固定不動之光 源22、一光罩24位於光源22下方以及一基板26位於光罩24 下方,並且光罩24的大小約為基板26的四分之一,而光罩 2 4與基板2 6間還設置有一光學系統2 8,用以將通過光罩2 4 之光線傳遞至基板26上。如同前面所述,基板26係為一玻 璃基板,其上可視實際需要塗佈一負光阻層或正光阻層。 其中基板2 6包含有四個液晶顯示面板之玻璃基板。 首先進行一曝光程序,將光罩24對準基板26上的區域 2 6a後,再以相同的速度同步地移動光罩24與基板26,以 使光罩24上的預定圖案轉移至基板26之區域26a。待完成 區域2 6a的曝光程序之後,移動基板26使光罩24對準基板 26上的區域26b,再重複前述之曝光程序。待依序完成基 板2 6上各個區域的曝光程序後,接著進行一顯影製程,以 去除未被光源照射之負光阻層。其中,光罩2 4之大小約等 於一個區域26a之大小,所以以第2圖為例,光罩24之大 約等於基板26之1/4。 由於在製作TFT-LCD的製程中,預定圖案轉移的解析 度(reso ution)要求並不像半導體製程那麼高,因此前述 之兩種驾知技術皆可能廣泛地應用在製作彩 然而基板16與基板26的大小約為62〇mm χ 二: 之製作成本Page 6 200412474 V. Description of the invention (3) The distance g between the cover 14 and the substrate 16 is about 100 to 200 microns (// m) in winter. The size of the photomask 14 is approximately the same as the size of the substrate 16. As shown in FIG. 2, an exposure device 20 includes a stationary light source 22, a photomask 24 under the light source 22, and a substrate 26 under the photomask 24. The size of the photomask 24 is about four times that of the substrate 26. One, and an optical system 2 8 is disposed between the mask 24 and the substrate 26 to transmit the light passing through the mask 24 to the substrate 26. As described above, the substrate 26 is a glass substrate, and a negative photoresist layer or a positive photoresist layer may be coated thereon as required. The substrate 26 includes a glass substrate with four liquid crystal display panels. First, an exposure process is performed. After the photomask 24 is aligned with the area 26a on the substrate 26, the photomask 24 and the substrate 26 are simultaneously moved at the same speed, so that the predetermined pattern on the photomask 24 is transferred to the substrate 26. Area 26a. After the exposure process of the area 26a is completed, the substrate 26 is moved to align the photomask 24 with the area 26b on the substrate 26, and the aforementioned exposure process is repeated. After sequentially exposing each area on the substrate 26, a development process is performed to remove the negative photoresist layer that is not illuminated by the light source. Among them, the size of the photomask 24 is approximately equal to the size of one area 26a, so taking the second figure as an example, the size of the photomask 24 is approximately 1/4 of the substrate 26. Since the resolution requirement of the predetermined pattern transfer is not as high as in the semiconductor process in the process of manufacturing a TFT-LCD, the two aforementioned driving techniques may be widely used in the production of color substrates 16 and substrates. The size of 26 is about 62〇mm χ 2: Production cost

光=費用相當高昂…,若能有效地= 罩之尺寸,勢必能大幅地減少TFT— LCDLight = very expensive ... If it can effectively = the size of the cover, it will definitely reduce the TFT-LCD

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另外,在基板上覆蓋一負光阻層或正 · 以旋轉式的塗佈(spin CGuting)來進 :將二,是 置广旋:…旋轉台下方的轴心可帶=== 且軸心裡提供一適當的真空度以吸住基材,而 J板亡:灑下,利用基板轉動的離心☆,而往基板:圍二 動,取後形成一層厚度均勻的光阻層。然而,現 二寸要轉動基板越來越…因此傳統的^ 式塗佈已無法使光阻層的厚度達到完全均勻。 褥 【發明内容】 有鑑於此,本發明的目的就是在提供一種曝光裝置及 一種光阻塗佈及曝光的方法,不但可減小光罩之尺寸, 可使製作的液晶顯示面板|易分割,進而降低製作成本。 根據本發明的目的,提出一種光阻塗佈及曝光的方 法,包含有下列步驟··首先,提供一基板。之後,提供一 $阻塗佈器,以在此基板上塗佈複數個條狀光阻區。接 著,提供一光源,用來產生一曝光用之光線。之後,提供 一具有預定圖案之光罩,置於此光源與此基板之間。然 後’對此複數個條狀光阻區進行一曝光程序,藉由此基板 與此光罩產生之相對性移動,使此光罩上之預定圖案被轉 寫成此基板上之一條狀曝光圖案。 根據本發明的另一目的在提供一種光阻塗佈裝置,用 來在一基板上均勻塗佈光阻液。此塗佈裝置包含有一光阻 塗佈器、一光阻供應器、以及一基座。光阻塗佈器係具有In addition, the substrate is covered with a negative photoresist layer or a positive spin-gut coating (spin CGuting) to advance: Put two, and set the wide rotation:… the axis below the turntable can bring === and the axis Provide an appropriate degree of vacuum to attract the substrate, and J board die: Sprinkle, use the substrate to rotate the centrifugal ☆, and move to the substrate: move around, and form a photoresist layer with uniform thickness after removal. However, it is more and more necessary to rotate the substrate in two inches ... Therefore, the traditional ^ -type coating has been unable to make the thickness of the photoresist layer completely uniform. [Summary of the invention] In view of this, the object of the present invention is to provide an exposure device and a photoresist coating and exposure method, which can not only reduce the size of the photomask, but also make the liquid crystal display panel made easy to divide. This reduces production costs. According to the purpose of the present invention, a photoresist coating and exposure method is provided, which includes the following steps. First, a substrate is provided. After that, a resist coating device is provided to coat a plurality of strip-shaped photoresist regions on the substrate. Next, a light source is provided for generating an exposure light. After that, a photomask having a predetermined pattern is provided and placed between the light source and the substrate. Then, an exposure process is performed on the plurality of strip-shaped photoresistive regions, so that a predetermined pattern on the mask is transferred to a strip-shaped exposure pattern on the substrate by the relative movement of the substrate and the mask. Another object of the present invention is to provide a photoresist coating device for uniformly coating a photoresist liquid on a substrate. The coating device includes a photoresist applicator, a photoresist supplier, and a base. Photoresist applicator

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複數個栅狀開口,光阻供應 佈器,而基座則是用以乘載 光阻塗佈器產生一相對移動 上塗佈出複數個條狀光阻區 器係用以供應光阻液至光阻塗 此基板。其中,此基板可與此 以使此光阻塗佈器可在此基板 一根據本發明的再一目的,提出一種曝光裝置,用來對 一基板亡之一光阻層進行曝光。此曝光裝置包含有一光 源、一光罩、以及一基座。光源係用以產生一曝 線。光罩係置於此光源及此基板之間,其具有一預定圖 案。而基座則是用以乘載此基板。其中,當對此光阻^進 打曝光程序時,藉由此基板與此光罩之一相對性移動7使 ί光罩上之此預定圖案被轉寫成此基板上之一條狀曝光圖 由於本發明是將光罩尺寸縮小至與光罩上之 的大小相當,並同時固定光罩與光源,藉由移動承板 之基座以將光罩上的圖案轉移至基板上。因此可達到&小 光罩之尺寸,進而降低製作成本之功效。另外,本發明/另 提供一種氣浮式系統以穩定地承載基板,此氣浮式系統可 分別應用在曝光裝置與光阻塗佈裝置之基座上。工/ 【實施方式】 本發明乃提供一種曝光裝置,藉由使基板與光 生相對性移動,即可使該光罩上之預定圖案被轉美 上之一條狀曝光圖案。如此,可縮小光罩之尺寸彳灸呈= 僅為基板的十分之一左右。此外,此曝弁奘 7 /、】 臀尤衣置可另含一氣A plurality of grid-like openings are used to supply the photoresist, and the base is used to generate a relative movement on the photoresist applicator to apply a plurality of strip-shaped photoresist zones to supply photoresist to Photoresist coated this substrate. Among them, the substrate can be used to make the photoresist coater on the substrate. According to still another object of the present invention, an exposure device is proposed for exposing a photoresist layer on a substrate. The exposure device includes a light source, a photomask, and a base. The light source is used to generate an exposure line. The photomask is placed between the light source and the substrate, and has a predetermined pattern. The base is used to carry the substrate. Among them, when the exposure process is performed on the photoresist, the predetermined pattern on the photomask is transferred to a stripe exposure pattern on the substrate by moving the substrate relative to one of the photomasks. The invention is to reduce the size of the photomask to a size equivalent to that on the photomask, and simultaneously fix the photomask and the light source, and move the base of the carrier plate to transfer the pattern on the photomask to the substrate. Therefore, the size of the & small mask can be achieved, thereby reducing the production cost. In addition, the present invention / another invention provides an air-floating system for stably carrying a substrate. The air-floating system can be applied to a base of an exposure device and a photoresist coating device, respectively. [Embodiment] The present invention is to provide an exposure device, which can make a predetermined pattern on the photomask be transformed into a stripe exposure pattern by relatively moving the substrate and light. In this way, the size of the mask can be reduced. The moxibustion is only about one tenth of the substrate. In addition, this exposure 7 /,] hip hip dressing

200412474 五、發明說明(6) 7 洋式系統以穩定帶動基板,使基板對光罩產生相對性的移 動。再者,本發明較佳可再另含一光阻塗佈器用以均勻塗 佈複數個條狀光阻區於基板上,以使本發明亦可使製作液 晶顯示面板的過程更為簡易。 請參照第3圖,其繪示本發明之較佳實施例之曝光裝 置的示意圖。曝光裝置3〇係用來對一基板36上之一光阻層 進行曝光。曝光裝置30包含有一光源3丨、一光罩32與一基 座35。光源31係用以產生一曝光用之光線。光罩32係置^ 光源31及基板36之間,其具有一預定圖案。基座35則是用 以乘載基板36。一弧形之受光區域33係形成於光罩32之 上。其中’光罩3 2上係具有多個呈規則排列之開口( s 1丨七) 32a。當對光阻層進行曝光程序時,藉由基板36與光罩32 之一相對性移動,使光罩32上之預定圖案被轉寫成基板36 上之一條狀曝光圖案。 其中,基座35更包括一氣浮式系統38(air一 fUat system)(顯示於第7A與7B圖中)與一傳動部37(顯示於第4a 圖中)。请參照第4A圖,其繪示第3圖中氣浮式系統之示音 圖。如第4A圖所示,基座35上更具有具有與傳動部”耦^ '一固定部34a,固定部34a係用以帶動基板36。傳動部” 係透過固定部34a帶動基板36。氣浮式系統38係用以乘載 基板3 6 ’使基板3 6懸浮於基座3 5上方,並保持一定間距, 而傳動部37則是與氣浮式系統38連結,用以承載並帶動某 板36,使基板36可在基座35上方穩定地來回移動。此外, 基座35上方亦可架設一光祖塗佈器34b。關於基座35内與200412474 V. Description of the invention (6) 7 The Western-style system stably drives the substrate, causing the substrate to move relative to the photomask. Furthermore, the present invention may preferably further include a photoresist applicator for uniformly coating a plurality of strip-shaped photoresist regions on the substrate, so that the present invention can also simplify the process of manufacturing a liquid crystal display panel. Please refer to FIG. 3, which illustrates a schematic diagram of an exposure apparatus according to a preferred embodiment of the present invention. The exposure device 30 is used to expose a photoresist layer on a substrate 36. The exposure device 30 includes a light source 31, a photomask 32, and a base 35. The light source 31 is used for generating an exposure light. The photomask 32 is disposed between the light source 31 and the substrate 36 and has a predetermined pattern. The base 35 is used to carry the substrate 36. An arc-shaped light receiving area 33 is formed on the photomask 32. Among them, the reticle 32 has a plurality of regularly arranged openings (s 1 丨 7) 32a. When the photoresist layer is subjected to an exposure process, a predetermined pattern on the photomask 32 is transferred to a stripe-shaped exposure pattern on the substrate 36 by relative movement of one of the substrate 36 and the photomask 32. The base 35 further includes an air-fUat system 38 (shown in FIGS. 7A and 7B) and a transmission 37 (shown in FIG. 4a). Please refer to Fig. 4A, which shows the sound diagram of the air-floating system in Fig. 3. As shown in FIG. 4A, the base 35 further has a fixing portion 34a coupled to the transmission portion, and the fixing portion 34a is used to drive the substrate 36. The transmission portion "is used to drive the substrate 36 through the fixing portion 34a. The air-floating system 38 is used to carry the substrate 3 6 'to suspend the substrate 36 above the base 35 and maintain a certain distance, and the transmission portion 37 is connected to the air-floating system 38 to carry and drive A certain plate 36 allows the substrate 36 to move back and forth stably above the base 35. In addition, a light ancestor applicator 34b may be set above the base 35. About the base 35

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將配合第7A與7B圖 於下 傳動部3 7連結之氣浮式系統3 8 文中說明。 干音:同:5化圖,其為第“圖中光阻塗佈器之放大 不思圖。先阻塗佈器341)與一管線34g連接,並 34c將光阻液34d輸送至光阻塗佈器⑽,然後經由二力開泵 口(lip) 34e將光阻液均勻塗佈於基板 ⑽與基板36之間距離均一,基板36本身穩定右地先移 及光阻塗佈器34b本身的開口均一’則可形成一具有均勻 厚度之光阻層34f於基板36上。 $另外,第3圖中光源31與光罩32之間還可包含一塑光 光學系統(beam forming optical system)(未顯示),用 來將光源31所發射出的光線轉換成一弧形光束 beani)33a,然後投射至光罩32上而形成受光區域33。在本 發明之另-實施例中,前述之塑光光學系統(未顯示)亦可 將光源31所投射出的光線轉換成一矩形光束(recta叫Μ π beam)。當進行曝光程序時,光源31與光罩32皆固定不 動,藉由基座35上的傳動部37移動懸浮之基板“,以逐步 地將光罩32上的圖案轉移至基板36上以形成條狀曝光圖 案。其詳細曝光程序將描述於下。 请參照第5圖,其繪示第3圖之曝光裝置簡化後之放大 示意圖。如第5圖所示’曝光裝置中有一基板36上包含有 四個液晶顯示面板之玻璃基板36a、36b、36c及36d,其上 設有黑色條紋(未顯示)’並塗佈有一負光阻層。首先進行 一曝光程序,先利用基座35移動基板36,以使基板36上的The air-floating system 38 connected to the lower transmission section 37 will be described in conjunction with FIGS. 7A and 7B. Dry sound: Same as: 5th photo, which is the enlarged view of the photoresist coater in the figure. First, the coater 341) is connected to a line 34g, and 34c sends the photoresist liquid 34d to the photoresist. The applicator ⑽, and then the photoresist liquid is evenly applied to the substrate ⑽ and the substrate 36 through the second force opening of the pump port (lip) 34e. Uniform openings can form a photoresist layer 34f with a uniform thickness on the substrate 36. In addition, a light forming optical system may be included between the light source 31 and the photomask 32 in FIG. 3 (Not shown), which is used to convert the light emitted from the light source 31 into an arc beam beani 33a, and then project it onto the photomask 32 to form a light receiving area 33. In another embodiment of the present invention, the plastic The light optical system (not shown) can also convert the light projected by the light source 31 into a rectangular beam (recta called Μ π beam). When the exposure process is performed, the light source 31 and the mask 32 are fixed, and the base 35 is used. The transmission part 37 on the moving substrate 37 is moved to gradually move the The pattern is transferred onto the substrate 36 to form a stripe-shaped exposure pattern. The detailed exposure procedure will be described below. Please refer to FIG. 5, which illustrates a simplified enlarged schematic diagram of the exposure device of FIG. 3. As shown in FIG. 5 'a substrate 36 in the exposure device includes four glass substrates 36a, 36b, 36c, and 36d with four liquid crystal display panels provided with black stripes (not shown)' and coated with a negative photoresist Floor. First, an exposure process is performed. First, the substrate 36 is moved by using the base 35 so that

200412474 五、發明說明(8) 區域36a移動至本罢ϊ 泣且广QC; 先罩32及叉光區域33下方適當的位置。接 者’基座3 5之億舍7 u j. 户之方*二 預定速度將基板36沿著箭頭八所 Π, 使光罩32上的預定圖案逐步地轉移至區 ΐ?固;者前頭八所指之方向移動,以使光罩32上的 預疋圖案繼續逐步地轉移至區域36b上之負光阻層。待完 =,36a與區域36b的曝光程序後,接著移動基板36,以 使基板36上的區域36c移動至光罩32及受光區域33下方適 田的位置。然後,基板3 6沿著箭頭a所指之方向移動以 使光罩32上的預定圖案逐步地轉移至區域36c及區域36d上 之負光阻層。 弧形之受光區域3 3垂直於基板3 6移動方向之左右兩端 =間距係與光罩32之長度大致相同。弧形之受光區域”平 行於基板3 6移動方向之前後兩端之間距係與光罩3 2之寬度 大致相同。同樣地,若使用矩形受光區時,矩形之受光= 域垂直於基板3 6移動方向之左右兩端之間距係與光罩3 2之 長度大致相同。而矩形之受光區域平行於基板36移動方向 之前後兩端之間距係與光罩32之寬度大致相同。 其中,上述之區域36a、36b、36c及36d的曝光順序可 以對調,其主要的特徵乃是在於固定光源31與光罩32,藉 由基座35移動基板36以完成曝光程序。其中光罩μ的寬声 及長度分別為W及L,受光區域的寬度、長度及開口寬度^ 別為W’ 、 [/及t,而任一玻璃基板36a、36b、36c及36d 的見度及長度分別為W及L 。在本發明之較佳實施例200412474 V. Description of the invention (8) The area 36a is moved to this position and the wide QC; first, the appropriate positions under the cover 32 and the fork light area 33. The receiver's base is 3 billion and 7 billion yuan. The user's side * 2. The substrate 36 is moved along the arrow Hachisuo at a predetermined speed, so that the predetermined pattern on the photomask 32 is gradually transferred to the area. The direction indicated by the eight is moved so that the pre-patterned pattern on the photomask 32 continues to be gradually transferred to the negative photoresist layer on the region 36b. After completing the exposure procedures for = a, 36a and area 36b, the substrate 36 is then moved so that the area 36c on the substrate 36 is moved to a suitable position below the mask 32 and the light receiving area 33. Then, the substrate 36 is moved in the direction indicated by the arrow a so that the predetermined pattern on the photomask 32 is gradually transferred to the negative photoresist layer on the regions 36c and 36d. The arc-shaped light receiving area 3 3 is perpendicular to the left and right ends of the substrate 36 in the moving direction = the pitch is approximately the same as the length of the photomask 32. The arc-shaped light-receiving area is parallel to the movement direction of the substrate 36 before and after the two ends are approximately the same as the width of the photomask 32. Similarly, when a rectangular light-receiving area is used, the rectangular light-receiving area = the field is perpendicular to the substrate 3 6 The distance between the left and right ends of the moving direction is approximately the same as the length of the mask 32. The rectangular light receiving area is parallel to the width of the front and back ends of the substrate 36 and the width of the mask 32 is approximately the same. The exposure order of the regions 36a, 36b, 36c, and 36d can be reversed. The main feature is that the light source 31 and the mask 32 are fixed, and the substrate 36 is moved by the base 35 to complete the exposure procedure. The lengths are W and L, the width, length, and opening width of the light receiving area ^ are W ', [/, and t, respectively, and the visibility and length of any of the glass substrates 36a, 36b, 36c, and 36d are W and L, respectively. In the preferred embodiment of the present invention

TW0991PA(奇美).ptd ϋ 頁 -- 200412474 發明說明(9) 中,W略小於w,L,略小於L,t約等於條狀之彩色濾光片 之寬度,而W約為W’,之1/3至1/4,L約略等於L,,,亦即光 罩32之尺寸大小僅為基板36的十分之—左右,遠較習知技 術中所需之光罩縮小許多。 接著,進行一顯影製程,以去除基板36上未被光線所 照射之負光阻層。重複上述塗佈負光阻層、曝光及 程數次,便可將彩色濾光鏡iR/G/B色層製作於玻璃基板 3 6a、36b、36c及36d上。其中,如第5圖所示,基板36上 之周邊區域36e係用來區隔液晶顯示面板36a、36b、及 36d,因此是不希望受光之區域,使顯影後此周邊區域, 的負光阻層被洗去。為順利分割液晶顯示面板3 6 a、M b、 36c及36d,可利用以下幾種方式: (1) 在曝光過程中,以活動式的擋片(Dynamic mask b 1 a d e )在適田的日守間點插入基材上方以擋住光線,使周邊 區域36e上的負光阻層不會受到光的照射。 (2) 在曝光過程中,另外加入一遮蔽裝置(shieid frame),如一框架式光罩於光罩32與基板36之間,以使周 邊區域36e上的負光阻層不會受到光的照射。 (3) 利用非旋轉式塗佈將負光阻層有間距地覆蓋於基 板上以形成複數個條狀光阻區,然後再進行曝光。 (4) 使用動態光罩(active mask)如液晶型光罩,利 用電壓讓液晶 > 子轉肖以擔住光線”戈是讓光線通過。 (5) RGB 使用正型光阻(positive type resist),並對 周邊區域36e另進行曝光。TW0991PA (Chimei) .ptd ϋ Page-200412474 In the description of the invention (9), W is slightly smaller than w, L, slightly smaller than L, and t is approximately equal to the width of the strip-shaped color filter, and W is approximately W ', 1/3 to 1/4, L is approximately equal to L, that is, the size of the photomask 32 is only about one-tenth of the substrate 36—about, which is much smaller than that required in the conventional technology. Next, a developing process is performed to remove the negative photoresist layer on the substrate 36 which is not irradiated with light. By repeating the application of the negative photoresist layer, the exposure and the process several times, the iR / G / B color layer of the color filter can be fabricated on the glass substrates 36a, 36b, 36c, and 36d. Among them, as shown in FIG. 5, the peripheral area 36 e on the substrate 36 is used to separate the liquid crystal display panels 36 a, 36 b, and 36 d. Therefore, it is an area that is not expected to receive light. The layers were washed away. In order to divide the LCD panel 36a, Mb, 36c and 36d smoothly, the following methods can be used: (1) During the exposure process, a dynamic mask (Dynamic mask b 1 ade) is used in the day of Shida. The guard point is inserted above the substrate to block light, so that the negative photoresist layer on the peripheral region 36e is not exposed to light. (2) During the exposure process, a shieid frame is added, such as a frame-shaped photomask between the photomask 32 and the substrate 36, so that the negative photoresist layer on the peripheral area 36e will not be illuminated by light. . (3) The non-rotary coating is used to cover the substrate with the negative photoresistive layer spaced to form a plurality of stripe photoresistive areas, and then exposure is performed. (4) Use an active mask, such as a liquid crystal type mask, and use voltage to let the liquid crystal > sub-shaft to hold the light. "Ge is to let light pass. (5) RGB uses a positive type resist (positive type resist ), And expose the surrounding area 36e separately.

第13頁 200412474 五、發明說明(ίο) 在上述方法中,又以第(3)種方式最 但簡便、省時,分割效果也最好。以下即針濟放盈,不 阻層之方法做進一步之敘述。 曲扳之光 本發明係使用一光阻塗佈裝置來完成上述之第 方式。光阻塗佈裝置係用來在基板76上均勻塗佈工(阻: 其包括有光阻塗佈器71、一光阻供應器與基座35。光阻塗 佈Is 7 1係具有複數個柵狀開口。光阻供應器可以如第4 Α圖 所示,係由管線與壓力栗等所組成,用以供應光阻液至光 阻塗佈器71。而基座35則如上文所述,用以乘載基板”。 其中,基板76可與光阻塗佈器71產生一相對移動以使光阻 液在基板7 6上形成複數個條狀光阻區。 兹將本發明使用光阻塗佈裝置,來形成光阻層的方法 敛述如下。首先,如第6A圖所示,利用光阻塗佈器7丨在基 板7 6上沿著γ方向進行光阻液塗佈,其中光阻塗佈器7丨具 有3個栅狀開口,且這些栅狀開口相隔一間隙,因此塗佈 出三條長條狀之光阻區72a、72b、72c。接著,如第6B圖 所示’對基板7 6進行沿著X方向之條狀曝光(s t r i p e exposure),曝光時基板的移動方向與光阻塗佈器7i的塗 佈方向係垂直,且曝光區域及曝光方向如箭號El、E2、E3 所示。由於負光阻照光的部分在顯影後會留下,且條狀的 負光阻之間留有空隙,因此曝光顯影後,會產生區域 78a、78b、78c、78d、78e、78f、78g、78h、78i,每個 區域係對應至一塊液晶顯示面板。換句話說’基板76上會Page 13 200412474 V. Description of the invention (ίο) In the above method, the third method is the most simple, but simple, time-saving, and best segmentation effect. The following is a description of the method of increasing profits without blocking layers. The present invention uses a photoresist coating device to accomplish the above-mentioned first mode. The photoresist coating device is used to uniformly coat the substrate 76 (resistance: it includes a photoresist coater 71, a photoresist supplier, and a base 35. The photoresist coating Is 7 1 series has a plurality of Grid-like opening. As shown in Figure 4A, the photoresist supply can be composed of pipelines and pressure pumps to supply photoresist liquid to the photoresist applicator 71. The base 35 is as described above. To carry the substrate ". Among them, the substrate 76 and the photoresist coater 71 can move relative to each other to make the photoresist liquid form a plurality of strip-shaped photoresist areas on the substrate 76. The present invention uses photoresist The method of forming a photoresist layer using a coating device is summarized as follows. First, as shown in FIG. 6A, a photoresist coating is performed on the substrate 76 along the γ direction using a photoresist applicator 7 丨, wherein The resist coater 7 丨 has three grid-like openings, and the grid-like openings are separated by a gap, so three strip-shaped photoresist areas 72a, 72b, and 72c are coated. Then, as shown in FIG. 6B, The substrate 76 is subjected to stripe exposure along the X direction. The direction of movement of the substrate during the exposure and the application method of the photoresist applicator 7i are performed. It is vertical, and the exposure area and exposure direction are shown by arrows El, E2, E3. Since the part of the negative photoresist light will be left after development, and there is a gap between the stripe negative photoresist, the exposure and development After that, areas 78a, 78b, 78c, 78d, 78e, 78f, 78g, 78h, 78i will be generated, and each area corresponds to a liquid crystal display panel. In other words, 'the substrate 76 will

TW0991PA(奇美).ptd 第14頁 200412474 五、發明說明(11) . 自然形成9塊液晶顯示面板之光阻分佈區,而不需要以其 他成本較昂貴等方式(如(1)、(2)、(4)、(5)等方式)來擋 住基板7 6上不希望受光之周邊區域,就能達到液晶面板順 利分離的效果。 其中’當對基板76上之此三個條狀光阻區進行曝光 時’假設曝光之順序為區域78a、78(i、78g,78b、78e、 78h ’與78c、78f、78i,則本發明之曝光程序如下。首 先’進行步驟(a),移動基板76以使光罩32位於至區域78a 之上方。接著,進行步驟(b),沿著X方向移動基板76以使 光罩32與基板76產生相對移動,以完成區域78a之光阻的 曝光動作’使光罩3 2上由多個規則排列之開口所形成之預 定圖案’得以轉寫成區域7 中之條狀曝光圖案(亦即是彩TW0991PA (Chimei) .ptd Page 14 200412474 V. Description of the invention (11). Naturally form the photoresist distribution area of 9 LCD panels without the need for other expensive methods (such as (1), (2) , (4), (5), etc.) to block the peripheral areas on the substrate 76 that do not want to receive light, and the effect of smooth separation of the liquid crystal panel can be achieved. Wherein, 'when exposing these three strip-shaped photoresistive regions on the substrate 76', assuming that the order of exposure is the regions 78a, 78 (i, 78g, 78b, 78e, 78h 'and 78c, 78f, 78i, the present invention The exposure procedure is as follows. First, step (a) is performed, and the substrate 76 is moved so that the photomask 32 is positioned above the area 78a. Next, step (b) is performed, and the substrate 76 is moved in the X direction so that the photomask 32 and the substrate are moved. 76 generates relative movement to complete the exposure action of the photoresist of the area 78a 'makes a predetermined pattern formed by a plurality of regularly arranged openings on the photomask 32' into a stripe exposure pattern in the area 7 (that is, color

色,光片之條狀圖案)。然後,步驟(c),將基板76繼續X 沿著方向平移’以使光罩32位於至區域78d之上方。接 著’進行步驟(d),沿著X方向移動基板76以使光罩32與基 板76產生相對移動,來完成區域78(1之光阻的曝光動作, 以形成區域78d中之條狀曝光圖案。之後,進行步驟(e), 將基板76沿著X方向平移,以使光罩32位於至區域78g之上 方’並持續使光罩32與基>反76產生相對移動,以形成區域 7 8 g中之條狀曝光圖案。經由由步驟(a)〜(e )所組成之第一 次條狀曝光製程,區域78a、78d、與78g之曝光動作將完 成之。 同理’接著將光罩32放置於區域7 8b之上方,並進行 第二次之條狀曝光製程,以完成區域78b、78e、與78h之Color, light stripe pattern). Then, in step (c), the substrate 76 is further shifted X in the direction 'so that the photomask 32 is positioned above the area 78d. Next, step (d) is performed to move the substrate 76 along the X direction to cause the photomask 32 and the substrate 76 to move relative to complete the exposure operation of the photoresist in the area 78 (1 to form a stripe exposure pattern in the area 78d. Then, step (e) is performed to translate the substrate 76 in the X direction so that the photomask 32 is positioned above the area 78g 'and continue to cause the photomask 32 and the base > anti-76 to move relative to each other to form area 7 The stripe exposure pattern in 8g. Through the first stripe exposure process composed of steps (a) to (e), the exposure operations of the areas 78a, 78d, and 78g will be completed. Similarly, 'the light will then be The cover 32 is placed above the area 78b, and a second stripe exposure process is performed to complete the areas 78b, 78e, and 78h.

第15頁 200412474Page 15 200412474

曝光動作。之後,再將光罩32放置於區域78c之上方,並 進行第二次之條狀曝光製程,以完成區域7 8。、7 8 f、與’ 7 8 i之曝光動作。兩行區域之間係存在有非曝光區(可由光 罩之非開口區來阻擋光線,讓光線無法穿透至此非曝光區 中)’以隔離沿著γ方向相鄰之兩個區域。其中,三個條狀 光阻區之延伸方向係為Y方向,而條狀曝光圖案之延伸方 向係為沿著X方向,二者係相互垂直。 另外’本發明之基座? 5上的氣浮式系統3 8,可依照氣 浮原理分成PA型基座和PV型基座。第7A圖為PA型基座之示 意圖。PA型基座35中,氣體自噴孔流出如箭號al、a2、 a3、a4、a5所示,再自相鄰孔洞釋放到常壓(reUase t〇 atmosphere)如箭號bl、b2、b3、b4、b5 所示。第7B 圖為 PV型基座之示意圖。pv型基座35中,氣體自噴孔喷出如箭 fuCl、c2、c3、c4、c5所示,再以抽真空方式(vacuum)將 氣體自相鄰孔洞抽出如箭號dl、d2、d3、d4、d5所示。由 上述可知:PA型基座與pv型基座的主要差別是在於:?¥型 基座是以抽氣方式將氣體抽出。因此,置於pv型基座上方 的基板36會受到較強的吸力而更靠近基座35。一般而言, PA型基座中’基板36與基座35的距離約為50〜200 //m,而 PV型基座中,基板36與基座35的距離約為30〜1〇〇 。 在貫際應用上’氣浮式系統可結合PA型基座與pv型基 座。請參照第7 C圖,其繪示依照本發明一較佳實施例之氣 浮式系統的示意圖。如第7 C圖所示,基座3 5係由P A型-P V 型-PA型所組成。當基板36自左向右移動,經過pV型區域Exposure action. Thereafter, the photomask 32 is placed over the area 78c, and a second stripe exposure process is performed to complete the area 78. , 7 8 f, and '7 8 i. There is a non-exposed area between the two rows of areas (light can be blocked by the non-opening area of the mask so that light cannot penetrate into this non-exposed area) 'to isolate two areas adjacent to each other along the γ direction. Among them, the extension direction of the three stripe photoresistive regions is the Y direction, and the extension direction of the stripe exposure pattern is along the X direction, and the two are perpendicular to each other. Also, ‘the base of the present invention? The air-floating system 3 on 5 can be divided into PA-type base and PV-type base according to the air-floating principle. Fig. 7A is a schematic view of a PA-type base. In the PA-type base 35, the gas flows out from the injection holes as shown by arrows al, a2, a3, a4, and a5, and then is released from adjacent holes to the atmospheric pressure (reUase tοatmosphere) such as arrows bl, b2, b3, b4, b5. Figure 7B is a schematic diagram of a PV-type base. In the pv-type base 35, the gas is ejected from the nozzle holes as shown by arrows fuCl, c2, c3, c4, and c5, and then the gas is extracted from the adjacent holes by a vacuum method (arrows dl, d2, d3, d4, d5. It can be known from the above that the main difference between PA-type base and pv-type base is: ¥ type base is used to extract gas. Therefore, the substrate 36 placed above the pv-type base is subjected to a stronger suction force and is closer to the base 35. Generally speaking, the distance between the substrate 36 and the base 35 in the PA-type base is about 50 to 200 // m, and in the PV-type base, the distance between the substrate 36 and the base 35 is about 30 to 100. In cross-applications, the 'air-floating system' can combine PA-type and pv-type bases. Please refer to FIG. 7C, which illustrates a schematic diagram of an air-floating system according to a preferred embodiment of the present invention. As shown in Fig. 7C, the base 35 is composed of P A-P V-PA. When the substrate 36 moves from left to right, it passes through the pV region

TW0991PA(奇美).ptd 第16頁 200412474 五、發明說明(13) 4 時,由於受到一向下吸力而可更穩定地移動,因此可在p v 型區域對基板3 6進行重要之製作程序,如利用光阻塗佈器 3 4 b進行基板3 6之光阻塗佈。另外,除了光阻塗佈器,基 座3 5還可加裝如紫外光裝置,用以對基板進行紫外線照 射,或者加裝偵測裝置,用以檢查基板36與基座35之間的 距離是否維持一定值。 相較 上之受光 對運動, 條狀曝光 光罩尺寸 作彩色濾 穩定地承 的製作過 綜上 其並非用 發明之精 發明之保 縮小至與光罩 於習知 區域的 以使光 圖案。 的數倍 光鏡所 載基板 程更為 所述, 以限定 神和範 護範圍 技術, 大小相 罩上的 習知所 ,因此 用的光 ,而非 簡易, 雖然本 本發明 圍内, 當視後 當’並 預Λ圖 使用之 ’改用 罩成本 旋轉式 且面板 發明已 ,任何 當可作 附之中 是將光 同時使 案逐步 光罩大 本發明 。另外 之光阻 分離效 以較佳 熟習此 各種之 請專利 基板與 地轉寫 約為本 後將可 ’運用 塗佈器 果更為 實施例 技藝者 更動與 範圍所 光罩間 成基板 發明所 大幅地 氣浮式 可使液 良好。 揭露如 ,在不 潤飾, 界定者 產生相 上之一 使用之 降低製 系統可 晶面板 上,然 脫離本 因此本 為準。TW0991PA (Chimei) .ptd Page 16 200412474 V. Description of the invention (13) At 4th time, it can move more stably because of a downward suction force. Therefore, it is possible to perform important production procedures for the substrate 36 in the pv-type area. The photoresist applicator 3 4 b performs photoresist coating of the substrate 36. In addition, in addition to the photoresist coater, the base 35 can also be equipped with an ultraviolet light device to irradiate the substrate with ultraviolet light, or a detection device to check the distance between the substrate 36 and the base 35 Whether to maintain a certain value. Compared with the light receiving and movement, the stripe exposure mask size is made by color filter steadily. In summary, it is not the essence of the invention. The invention is narrowed down to the mask in the conventional area to make the light pattern. The number of substrates carried by the multiple times optical mirror is more described, in order to limit the scope of God and Fan guard technology, the size of the mask is known, so the use of light, rather than simple, although within the scope of the present invention, The 'and pre-Λ map's use' has been replaced with a cover that is a rotary type and the panel has been invented. Anything that can be attached is to make the light gradually make the present mask. In addition, the photoresistance separation effect is better to familiarize yourself with the various patented substrates and ground translators. This will be used in the future. You can use the applicator to change the embodiment. Ground air floatation can make the liquid good. According to the disclosure, in the case of non-retouching, one of the definitions used in the lowering system can be crystallized on the panel, but it will deviate from the original and therefore the original shall prevail.

200412474 圖式簡單說明 ‘ 【圖式簡單說明】 w第1、2圖為習知製作液晶顯示面板的曝光系統的示意 圖; 第3圖繪示本發明之較佳實施例之曝光裝置的示意 圖; 第4 A圖繪示第3圖中氣浮式系統之示意圖; 第4B圖為第4A圖中光阻塗佈器之放大示意圖; 第5圖繪示第3圖之曝光裝置簡化後之放大示意圖; 第6A、6B圖繪示依照本發明一較佳實施例之以非旋轉 式塗佈法製作η塊液晶顯亍面板之示意圖。 第7Α圖為ΡΑ型基座之示意圖; 第7Β圖為PV型基座之示意圖;及 第7C圖繪示依照本發明一較佳實施例之氣浮式系統的 示意圖。 圖式標號說明 10、20、30 :曝光裝置 12、2 2、31 :光源 1 4、2 4、3 2 :光罩 16、2 6 :基板 26a 、26b 、26c 、26d:區域 2 8 :光學系統 3 2a ··開口 3 3 :受光區域200412474 Brief description of the drawings' [Simplified description of the drawings] w Figures 1 and 2 are schematic views of a conventional exposure system for making a liquid crystal display panel; Figure 3 is a schematic view of an exposure device according to a preferred embodiment of the present invention; Figure 4A shows the schematic diagram of the air-floating system in Figure 3; Figure 4B shows the enlarged schematic diagram of the photoresist coater in Figure 4A; Figure 5 shows the simplified schematic diagram of the exposure device in Figure 3; Figures 6A and 6B are schematic diagrams of making n-type liquid crystal display panels by a non-rotation coating method according to a preferred embodiment of the present invention. Figure 7A is a schematic diagram of a PA-type base; Figure 7B is a schematic diagram of a PV-type base; and Figure 7C is a schematic diagram of an air-floating system according to a preferred embodiment of the present invention. Description of reference numerals 10, 20, 30: Exposure devices 12, 2 2, 31: Light source 1 4, 2 4, 3 2: Mask 16, 2 6: Substrates 26a, 26b, 26c, 26d: Area 2 8: Optical System 3 2a · Opening 3 3: Light receiving area

TW0991PA(奇美).ptd 第18頁 200412474 圖式簡單說明 33a 弧 形 光 束 34a 固 定 部 34b 光 阻 塗 佈器 34c 壓 力 泵 34d 光 阻 液 34e 開 π 34f 光 阻 層 34g 管 線 72a 、 72b 、 72c :光阻區 35 :基座 3 6、7 6 ·•基板 36a 、36b 、36c 及36d :區域 3 6 e :周邊區域 3 7 :傳動部 3 8 ·氣浮式糸統 78a 、 78b 、 78c 、 78d 、 78e 、 78f 、 78g 、 78h 、 78i : 區域TW0991PA (Chimei) .ptd Page 18 200412474 Brief description of the diagram 33a Arc beam 34a Fixing part 34b Photoresist applicator 34c Pressure pump 34d Photoresist liquid 34e Open π 34f Photoresist layer 34g Pipes 72a, 72b, 72c: light Resistance area 35: Base 3 6, 7 6 • Substrates 36a, 36b, 36c, and 36d: Area 3 6e: Peripheral area 37: Transmission section 3 8 Air-floating systems 78a, 78b, 78c, 78d, 78e, 78f, 78g, 78h, 78i: Zone

TW0991PA(奇美).ptd 第19頁TW0991PA (Chi Mei) .ptd Page 19

Claims (1)

200412474 六、申請專利範圍 1 · 一種光阻塗佈及曝光的方法,包含有下列步驟: 提供一基板; 提供一光阻塗佈器,以在該基板上塗佈複數個條狀无 阻區, 提供一光源,用來產生一曝光用之光線; 提供一具有預定圖案之光罩’置於該光源與該基板之 間;以及 對該複數個條狀光阻區進行一曝光程序,藉由該基板 與該光罩之一相對性移動,使該光罩上之預定圖案被轉寫 成該基板上之一條狀曝光圖案。 2. 如申請專利範圍第1項之方法,其中該複數個條狀 光阻區與該條狀曝光圖案係互相垂直。 3. 如申請專利範圍第1項之方法,其中該基板係由一 基座乘載,該基座包括: 一氣浮式系統,用以乘載該基板,使該基板懸浮於該 基座上方一間距;及 一傳動部,與該氣浮式系統連結,用以帶動該基板。 4. 如申請專利範圍第1項之方法,其中該預定圖案具 有複數個呈規則排列之開口。 5 ·如申請專利範圍第1項之方法,其中該光源會形成 一弧形之受光區域於該光罩上,其中該受光區域垂直於該 基板移動方向之左右兩端之間距係與該光罩之長度大致相 同。 6.如申請專利範圍第1項之方法,其中該光源會形成200412474 VI. Application Patent Scope 1. A method of photoresist coating and exposure, including the following steps: providing a substrate; providing a photoresist coater for coating a plurality of strip-shaped non-resistance areas on the substrate, providing A light source for generating an exposure light; providing a mask having a predetermined pattern to be placed between the light source and the substrate; and performing an exposure procedure on the plurality of strip-shaped photoresistive regions through the substrate Relative to one of the photomasks, a predetermined pattern on the photomask is transferred to a stripe-shaped exposure pattern on the substrate. 2. The method according to item 1 of the patent application, wherein the plurality of strip-shaped photoresist regions and the strip-shaped exposure pattern are perpendicular to each other. 3. The method of claim 1 in which the substrate is carried by a base, and the base includes: an air-floating system for carrying the substrate so that the substrate is suspended above the base. A distance; and a transmission part connected to the air-floating system for driving the substrate. 4. The method according to item 1 of the patent application scope, wherein the predetermined pattern has a plurality of regularly arranged openings. 5. The method according to item 1 of the patent application range, wherein the light source forms an arc-shaped light receiving area on the photomask, and the distance between the left and right ends of the light receiving area perpendicular to the substrate moving direction is related to the photomask. The length is approximately the same. 6. The method according to item 1 of the patent application scope, wherein the light source will form TW0991PA(奇美).ptd 第20頁 200412474 六、申請專利範圍 ^ --- 罩上,其中該受光區域平行於該 基板移動方向之w後兩蜢之間距係與該光罩之寬度大致相 同。 7 ·如申請專利範圍第1項 一矩形之受光區域於該光罩上 基板移動方向之左右兩端之間 同0 之方法,其中該光源會形成 ’其中該受光區域垂直於該 距係與該光罩之長度大致相 8·如申請專利範圍第1項之方法’其中該光源會形成 一矩形之受光區域於該光罩上’其中該受光區域平行於該 基板移動方向之前後兩端之間距係與該光罩之寬度大致相 同。 1 9 ·如申請專利範圍第1項之方法’其中該光阻塗佈器 係具有複數個栅狀開口,且該些栅狀開口間均相隔一間 隙0 10.如申請專利範圍第1項之方法,其中該光阻塗佈 器係以一第一方向在該基板上之塗佈該複數個條狀光阻 區’且該第一方向係與該基板進行該曝光程序時之移動方 向垂直。 11.如巾請專利範園第2項之方法’其中該氣浮式系 統更包括-偵測裝置,肖以檢查該基板與該基座之該間距 是否維持一定值。 19 ^ 从妒愛,用來在一基板上均勻塗佈光 1 2 · —種光阻塗佈裝I 阻液,該塗佈裝置包含有: μ收叫η · ϋ數個樹狀開口’ 一光阻塗佈器,具有複歡TW0991PA (Chimei) .ptd Page 20 200412474 6. Scope of patent application ^ --- Where the light receiving area is parallel to the moving direction of the substrate, the distance between the two sides is about the same as the width of the mask. 7 · A method for applying a rectangular light-receiving area between the left and right ends of the substrate on the reticle in the direction of the patent application is the same as 0, wherein the light source will form 'where the light-receiving area is perpendicular to the distance and the distance The length of the photomask is roughly the same as the method of item 1 in the patent application 'where the light source will form a rectangular light receiving area on the photomask' where the light receiving area is parallel to the direction of movement of the substrate It is approximately the same width as the mask. 1 9 · The method according to item 1 of the scope of patent application 'wherein the photoresist applicator has a plurality of grid-shaped openings, and the grid-shaped openings are separated by a gap 0 10. In the method, the photoresist coater applies the plurality of stripe photoresist regions on the substrate in a first direction, and the first direction is perpendicular to a moving direction of the substrate during the exposure process. 11. If the method of patent No. 2 is applied, the air-floating system further includes a detection device to check whether the distance between the substrate and the base is maintained at a certain value. 19 ^ From jealousy, used to uniformly apply light on a substrate 1 2 · —A photoresist coating device I liquid barrier, the coating device includes: μ 收 叫 η · ϋ several tree-like openings' a Photoresist applicator with Fu Huan 200412474 六、申請專利範圍 應器,用以供應該光阻液至該光阻塗佈器; 用以乘載該基板; 基板可與該光阻塗佈器產生一相對移動以使 基板上形成複數個條狀光阻區。 請範圍第1 2項之塗佈裝置,其中該複數個柵 隔一第一間隙。 請範圍第1 3項之塗佈裝置,其中該複數個條 係存在一第二間隙,且該第二間隙之大小係 相當。 曝光裝置,用來對一基板上之一光阻層進行 曝光,該曝光裝置包含有·· 用以產生一曝光用之光線; 置於該光源及該基板之間,其具有一預定圖 光阻供 以及 基座 其中,該 該光阻液在該 13·如申 狀開口間均相 14· 如申 狀光阻區之間 與該第一間隙 15· —種 一光源, 一光罩, 案;以及 一基座, 其中,當 該光罩之一相 成該基板上之 16. 如申 係包括: 用以乘載該基板, 對該光阻層進行曝光程序時,藉由該基板與 對性移動,使該光罩上之該預定圖案被轉寫 一條狀曝光圖案。 請專利範圍第15項之曝光裝置,其中該基座 一氣浮式系統(air- float system),用以乘載該基 板,使該基板懸浮於該基座上方一間距;以及 與該氣浮弍系統連結,用以帶動該基板 一傳動部 mm200412474 VI. Applicable patent scope Applicator for supplying the photoresist liquid to the photoresist applicator; used to carry the substrate; the substrate can move relative to the photoresist applicator to form a plurality on the substrate Strip-shaped photoresistive area. Please refer to the coating device of item 12 wherein the plurality of grids are separated by a first gap. Please apply the coating device in the range of item 13, wherein the plurality of bars have a second gap, and the size of the second gap is equivalent. An exposure device for exposing a photoresist layer on a substrate, the exposure device includes: ... for generating an exposure light; placed between the light source and the substrate, and having a predetermined photoresist And the base, wherein the photoresist liquid is homogeneous between the 13. Rushin-like openings 14. the Rushin-like photoresistance zone and the first gap 15 · — a light source, a photomask, a case; And a base, wherein when one of the photomasks forms on the substrate 16. The application system includes: for carrying the substrate and performing an exposure process on the photoresist layer, the substrate and the substrate Move so that the predetermined pattern on the reticle is transposed into a stripe-shaped exposure pattern. The exposure device according to item 15 of the patent, wherein the base is an air-floating system for carrying the substrate so that the substrate is suspended at a distance above the base; System connection for driving a transmission part of the substrate mm TW0991PA(奇美).ptd 第22頁 200412474 六、申請專利範圍 1 17. 如申請專利範圍第1 5項之曝光裝置,其中該預定 圖案具有複數個呈規則排列之開口。 18. 如申請專利範圍第1 5項之曝光裝置,其中該光源 會形成一弧形之受光區域於該光罩上,其中該受光區域垂 直於該基板移動方向之左右兩端之間距係與該光罩之長度 大致相同。 19. 如申請專利範圍第1 5項之曝光裝置,其中該光源 會形成一弧形之受光區域於該光罩上,其中該受光區域平 行於該基板移動方向之前後兩端之間距係與該光罩之寬度 大致相同。 20. 如申請專利範圍第1 5項之曝光裝置,其中該光源 會形成一矩形之受光區域於該光罩上,其中該受光區域垂 直於該基板移動方向之左右兩端之間距係與該光罩之長度 大致相同。 21. 如申請專利範圍第1 5項之曝光裝置,其中該光源 會形成一矩形之受光區域於該光罩上,其中該受光區域平 行於該基板移動方向之前後兩端於垂直方向之間距係與該 光罩之寬度大致相同。TW0991PA (Chimei) .ptd Page 22 200412474 6. Scope of patent application 1 17. For the exposure device of scope 15 of the patent application, the predetermined pattern has a plurality of regularly arranged openings. 18. For an exposure device according to item 15 of the patent application scope, wherein the light source forms an arc-shaped light receiving area on the mask, wherein the distance between the left and right ends of the light receiving area perpendicular to the substrate moving direction is related to the The length of the reticle is approximately the same. 19. For an exposure device according to item 15 of the application, wherein the light source forms an arc-shaped light receiving area on the mask, wherein the distance between the light receiving area and the front and back ends parallel to the moving direction of the substrate is related to the The width of the reticle is approximately the same. 20. For an exposure device according to item 15 of the patent application scope, wherein the light source forms a rectangular light receiving area on the photomask, wherein the distance between the left and right ends of the light receiving area perpendicular to the moving direction of the substrate is related to the light. The lengths of the hoods are approximately the same. 21. For an exposure device according to item 15 of the patent application, wherein the light source forms a rectangular light receiving area on the mask, wherein the light receiving area is parallel to the substrate moving direction before and after the vertical distance between the two ends It is approximately the same width as the mask. TW0991PA(奇美).ptd 第23頁TW0991PA (Chi Mei) .ptd Page 23
TW92100728A 2003-01-14 2003-01-14 Exposure device and its method for manufacturing color filters TWI276921B (en)

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