TW200409726A - Low driving voltage micro electro-mechanic microwave switch - Google Patents

Abstract

There is provided a low driving voltage micro electro-mechanic microwave switch, which utilizes surface type micro electro-mechanic process technique to construct the main structure of microwave switch, and then utilizes sacrificial layer emptying technique to suspend the structure, so as to enable the switch structure to move up and down. It structure design employs a 3D moveable structure including a suspending arm structure and a spring support to utilize electrostatic force to activate the 3D structure, thereby achieving the function of signal on/off, wherein the suspending arm structure is able to reduce the activated distance of switch (upper and lower electrodes) for further reducing the switching time of the switch, and the spring support can effectively reduce structural spring constant for further reduce the required electrostatic force for activating the structure, thereby achieving the purpose of low driving voltage.

Description

200409726

Description of the invention (PA020644.TWP-3/25 10 15 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 [Technical Field] The present invention relates to a kind of low drive voltage micro-electro-mechanical micro-switch with spring-arm structure. Micro-electro-mechanical technology combined with electroplating process to produce a spring cantilevered microwave switch. Its main feature is to reduce the elastic constant of the structure by using a cantilever beam structure combined with two elastic standards to reduce the driving voltage of the switch and make the micro-electro-mechanical microwave switch. Can be used in a wider range of fields. [Previous technology] In the field of hotline communication, with the rapid development of micro-electro-mechanical technology in recent years, passive components can be reduced in size and integrated in a single chip. Hollow-out technology can be used to make passive components into a structure that can be mechanically actuated to achieve variable frequency adjustment (such as filters, inductors, capacitors) or Ana Wei (such as microwave switches). In microwave switches, currently used Electronic switches made by CMOS process technology, such as: P, NDi〇de, FETs, when the signal is in the state of conduction, it will cause The contact between metal and semiconductor produces ohmic contact (ohimc contact), which causes ohmic loss (0hmic 10ss), which causes loss during signal transmission. 'When the signal is isolated, its insulation is not good. Microwave switches manufactured using micro-electro-mechanical process technology can avoid the effect of ohmic loss when the signal is turned on, so that the signal loss is very small. Generally, insertion loss can be below idfi, and its signal isolation effect is also better than electronic switches. Insulation (isolation) can reach more than 40dB. In addition, the advantages of micro-electro-mechanical switches also have near zero power consumption. Even if the drive voltage of the switch reaches 20-80 volts, it will not cause current loss. To achieve a very low energy waste (on (please read the precautions on the back before filling this page)

This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 200409726 A7 B7 Description of Invention (> PA020644.TWP-4/21 5 10 15 Printed by Ding Consumer Co., Ltd., Intellectual Property Bureau, Ministry of Economic Affairs 20 off, the cycle loss is only about 10-100nJ), and can be produced on glass substrates, " ^ substrates, low temperature co-fired ceramic TCQ, high resistance dream wafers, and Shi Shenhua gallium substrates, the production cost is relatively low. Although the micro-electro-mechanical microwave switch has many advantages over solid-state electronic switches, but if it is driven by electrostatic force, it is currently-the traditional cantilever type and _capacitor 鹤 Guan He voltage is above the voltage, its structure is shown in the figure -As shown in Figure 2, its demand for electric dust is much higher than the system voltage, which makes it difficult to apply it to wireless communication modules. It can be seen that there are still many shortcomings in the above-mentioned customary methods. They are not a good designer and need to be improved. In view of the various shortcomings derived from the conventional microwave switch structure, the inventor of the present case, though trying to improve and innovate, and after years of painstaking research, he successfully developed a low-drive voltage micro-electromechanical microwave switch with a yellow arm structure. . [Objective of the Invention] The purpose of the present invention is to provide a low driving voltage micro-electromechanical microwave switch with a spring swing arm structure. In order to overcome the disadvantage of excessive driving voltage, the present invention changes the traditional structural design and uses a cantilever beam combined with a spring support to achieve the same Reducing the operating distance of the switch and the elastic constant of the structure, the two functions shorten the time required to drive the switch and reduce the electrostatic force required to achieve the purpose of increasing the switching speed and reducing the driving voltage. A second object of the present invention is to provide a low-driving voltage micro-electromechanical microwave switch with a spring swing arm structure. The main structure of a microwave switch is constructed using a surface micro-electro-mechanical process technology, and the structure is suspended by a sacrificial layer hollowing technology. -(Please read the notes on the back before filling this page) One = 0, tun I ϋ fs -s B Ϊ in I Mi

-Rf egB MM amoe n I The paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) 200409726 A7 --- ----- PA020644.TWP-5/25 V. Description of the invention (force) Empty, so that the switch structure can be moved up and down. In terms of metal deposition, adding electroplating technology: ’can effectively reduce process time and process cost. Another object of the present invention is to provide a low-drive electromechanical microwave switch with a spring swing arm structure. It is known from the final simulation and measurement results that the switching voltage can be reduced to less than lOvolts, which is lower than the traditional cantilever made by MEMS technology. Beam or film capacitive switches drive less than one-third of the voltage. [Technical content] The low driving voltage micro-electro-mechanical micro 10-wave switch of the spring arm structure provided by this lxming is manufactured using surface-type micro-electro-mechanical process technology. Metal deposition uses physical vapor deposition and electroplating technology to deposit metal. On the substrate, the dielectric layer material is deposited using plasma-assisted chemical vapor deposition. Finally, the sacrificial layer is removed by plasma reactive etching or wet etching (polymer remover). Switching process. 15 In the production of transmission line, the coplanar waveguide type (Coplanar

Waveguide) transmission lines use copper metal as the transmission line material. In order to prevent oxidation of the copper metal, the surface of the copper metal is plated with a non-oxidizable metal as a break-proof layer, such as mirror, wire, metal, and gold. As for the sacrificial layer, polymer materials such as photoresist 20, photosensitive poly imide, Benzocyclobutene (BCB), etc. are used as sacrificial layer materials, of which poiyimide and BCB can be used in South Vancouver In the manufacturing process, a spin coater is used to coat a polymer material on a substrate. In terms of simulation analysis, CoventorWare simulation software is used in conjunction with the paper size to apply the Chinese National Standard (CNS) Α4 specification (210 × 297 mm) !!! Installed ί (Please read the precautions on the back before filling this page) !! Printed by the Ministry of Panji's Wisdom-Consumer Cooperative; :: One or five invention descriptions ((, A7 B7 PA020644.TWP-6/25 Ministry of Economics, Intellectual Property Bureau, Employees, Consumers, Cooperatives, I)

Analysis of the coupling between nature and machinery σ knife analysis, the size of the driving voltage is proposed. [Brief description of the drawings] Read the following detailed description of a preferred embodiment of the present invention and its diagrams. The drawings will further understand the technical content of the present invention and its purpose and effect; 3 attached drawings of the embodiment For: Figure 1 is a schematic diagram of the structure of a conventional cantilever switch; Figure 2 is a schematic diagram of a conventional thin film capacitor-type open structure; Figure 1 is a side view of a switch cantilever beam of the present invention; Figure 4 is a coventorwave simulation software of the present invention A comparison chart of spring dimensions for driving 10 voltage analysis; Figure 5 is a comparison chart of cantilever beams using coventorwave simulation software for driving voltage analysis; Figure 6 is a driving voltage analysis simulation using CoventorWave simulation software for the invention Result diagram; 15 FIG. 7 is a diagram of the relationship between voltage application and structural contact force change using CoventorWave simulation software in the present invention; FIG. ; Figure IX ~ (v) is the second process of the low drive voltage microcomputer 20 electric microwave switch with the yellow arm structure of the invention Figures; Figure 10 is the structural diagram of the invention when the CPW transmission line and the lower electrode are manufactured; Figure Ί is the structural diagram of the invention when the groove of the anchor is formed; Figure 12 is the structural diagram of the invention when the contact is manufactured; k Paper size applies to China National Standard (CNS) A4 (210 X 297 mm) lil [! I ------ Ϊ — SI, ---- I i "Please read the precautions on the back before filling this page )

200409726

AT B7 PA020644.TWP-7/25 V. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 Description of the Invention (G) Figure 13 is a structural diagram of the invention when the upper electrode and dielectric layer are manufactured, and Figure 14 is Structural diagram of the microwave switch completed by removing the sacrificial layer according to the present invention [representative symbols of main parts] 10 transmission line 100 substrate 101 lower electrode 102 titanium metal 103 copper metal 104 protective layer 105 photoresist 106 gold metal 20 anchor groove 201 sacrificial layer 30 contact 301 metal protective layer 302 copper metal 303 adhesive layer 304 gold metal 40 cantilever beam 401 spring 402 upper electrode 403 dielectric layer 404 inscription metal This paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 cm) (Please read the precautions on the back before filling in this page.-Order 200409726 A7 B7 PA020644.TWP-8/25 V. Description of invention 10 15 Printed by the consumer cooperation branch of the Intellectual Property Bureau of the Ministry of Economic Affairs? / 20 dagger) 405 suspension structure [Preferred embodiment] The low driving voltage micro-electro-mechanical microwave switch of the elastic yellow arm structure provided by the present invention, the purpose of using a cantilever beam in # is to use the rod principle to reduce the displacement of the upper pole, Figure 2 is a side view of the cantilever of the switch, f is the electrostatic force generated by the encapsulation. When the upper electrode displacement reaches Lix G / Ll + L2, the contact can contact the miscellaneous wire. (The design can prevent the upper electrode from If the lower electrode is in contact, the conduction will be reduced, and M will be less opened! I will make a pure shift, which will reduce the switch operating time. However, the conventional cantilever structure, whose structural elasticity constant (^ spring constant) is too large, causes the required driving voltage to be too high. Generally, the driving voltage is 30 volts or more. In order to overcome the shortcomings of excessive structural elastic constants, combined with the elastic support structure, the elastic constants can be greatly reduced, thereby achieving the purpose of reducing the driving voltage. For the calculation of the spring constant of the spring structure, refer to reference 1 (E.P. Popov, Introduction to Mechanics of Solids. Prentice-Hall, 1968.). Document 1 (JE Shigley and LD Mitchell, Mechanical Engineering Design · McGraw-Hill, 4thed, 1983) 〇 The present invention uses CoventorWave simulation software to analyze the driving voltage. The spring size is compared with Figure 4, w-20 // m, Li: = 100 / zm, Ls = 200 # m, aluminum metal thickness h = l // m, sacrificial layer thickness 4 // m. The dimensions of the cantilever beam are compared with those in Fig. 5, M = 3〇〇 # m, b2 = 3〇〇 # m, b3 = 90 // m, b4 = 50 / z m. For the simulation results, please refer to Figure 6 and Figure 7. The horizontal coordinate in Figure 6 is the voltage value, and the vertical coordinate is the displacement amount. 丨 When the voltage continues to increase, the day shift 'switch displacementΪ also keeps increasing, when the voltage reaches 7v〇lts When this happens, the amount of displacement will no longer increase. The horizontal axis in Figure 7 is the voltage value, and the vertical, horizontal, and vertical scales apply the Chinese National Standard (CNS) A4 Regulation (210 X 297 mm) (Please read the precautions on the back before filling this page)

200409726 Printed by the Consumers and Consumers Agency of the Intellectual Property Agency of the Ministry of Economic Affairs V. Description of the invention (5 10 15 20 A7

The coordinate is the contact force. When the voltage is before 7volts, the contact force is not generated. When the voltage is above Tvdts, the contact force is 144 / zN. It is inferred from Figure 6 and Figure 7 that when the voltage reaches 7voits, the switch displacement reaches 4 / Zm and a contact force is generated, which indicates that the contact of the switch has decreased by 4 # m and it is in contact with the transmission line, which can make the signal conductive. Refer to Figure 8 for a flowchart of the manufacturing process of the low drive voltage micro-electromechanical microwave switch of the spring spiral arm structure of the present invention. As can be seen from the figure, a_a is the cross-section line at the bottom of the pen, and g_B, In order to pass through the section line at the transmission line (refer to Figure 14 for the position of A-AtB VII), the process steps are as follows: Step (1) · First remove the substrate, metal, organic, oil and other pollution by standard cleaning procedures In order to ensure the stability of the manufacturing process, the flatness of the substrate 100 surface and the adhesion of the deposition material, as shown in Figure 8 (a); Step (2) ·· The first layer of adhesive layer deposition is performed. This process is mainly It is used to deposit titanium metal 102, which is used to help the adhesion between the glass substrate and copper metal before the copper metal is deposited. This deposition metal process uses an electronic deposition machine to deposit titanium metal 102 on the surface of the glass substrate. 2 Thickness is 500A, as shown in Figure 8 (b); Step (3): Copper metal 103 is deposited. This process is the main metal material for the transmission line and the lower electrode. There are two methods of deposition, the first one Method is to use electronic flash steam directly Plating, the thickness of the coating is, the second method is to first use electron scavenging to deposit a seed layer (see (j layer), about 500 A, and then use copper plating technology to deposit copper on the seed layer, the plating thickness is about 1 / / m, as shown in Figure 8 (C); Step ⑷: Deposit a protective layer of copper metal oxide 104, use this paper size to apply Chinese National Standard (CNS) A4 regulations (210 X 297 mm (please read first Note on the back then fill in this page) ---- ---------- install tn 9mm ϋ f— nn <

^ BB9 VS3 fm9 n ai I 11 I Metals that are not easily oxidized, such as nickel, copper, copper, and gold, with a thickness of 500A. If step (3) is the use of electroplated steel, then directly reuse ^ plating method Nickel plating is used as a protective layer, as shown in Figure 8; Step ⑸: Use a spin coater to apply a photoresist 105 to the protective layer 5, as shown in Figure 8 (e); Step ⑹: Use a yellow light process to apply light Resistive exposure and development ㈣, ㈣_ The shape of the electrode and transmission line under the resistance, as shown in Figure VIII; Step (7) • Using a metal after-treatment solution, sequentially place the protective layer metal, copper metal, and adhesive layer metal on the side that is not protected by photoresist Drop, and then remove the photoresist by 10 to complete the 1st-layer transmission line 1 () and power off-the production of the magic puppet is as in (g); Step ⑻: Perform the second-layer switching process and use a photoresist coater molecule to sacrifice The layer 201 material (such as: photoresist, photosensitive polyurethane, BenzoCyd〇butene, etc.) is coated on the substrate completed in the first layer, such as 15 ⑻; ㈡ Step ⑼: 黄 photoresist with yellow light The exposure and development program forms the anchor groove 20, as shown in Figure 8 (!); Y step (10). For the second layer of switch production, use Ziqiu grave deposit deposits metal layer to prevent copper metal oxidation, the deposition is about as shown in Figure 200; step ⑼ ·, copper metal 302 deposition, this process is the main metal material for contact deposition. There are two methods of deposition The first method is to directly use an electronic steaming clock with a thickness of 0.5mm. The second method is to use an electronic steaming method to deposit a seed layer (] ayer), about 200409726 A7 B7. Staff elimination! Printed by Fei Cooperative V. Description of the invention ((500A, then copper is deposited on the seed layer by electroplating technology, the thickness of the electric money is about 0.5 / zm, as shown in Figure 8 (k); Step (12): Adhesive layer 303 Deposition, this process is mainly sinking titanium metal, as the adhesion layer 5 303 of copper metal and the dielectric layer of the next process. This deposition metal process uses an electronic deposition machine to deposit hafnium metal on the copper surface, The thickness of the titanium metal is 500A, as shown in Figure 8 ()); Step (13): Use a spin coater to coat the photoresist 105 on the surface of the titanium, as shown in Figure 8 (m); Step (14): The photoresist is exposed and developed in a yellow light process, and the shape of the contact of the photoresist is retained, as shown in Fig. 8 (η); Step (15): Using a metal etching solution, the titanium metal copper metal and the protective layer metal are not exposed to light in order. The resist protection part is etched away, and then the photoresist is removed to complete the production of the third layer of contact30, as shown in Figure 8 (〇); Step (16): The fourth layer of switch production is performed, using an electro-assisted chemical vapor deposition system ( PECVD), depositing high dielectric constant materials, such as silicon oxide (Si02), silicon nitride (SiNx) The third layer contact30 has been completed on the substrate as a dielectric layer 40 between the upper and lower electrode plates. The deposition thickness is 09 # m, as shown in Figure 8 (p); Step (17): the upper electrode Production, this process mainly deposits aluminum metal (conductive metal) 404, and uses an electronic snap-on deposition machine to deposit aluminum metal on the surface of the dielectric layer. The thickness of aluminum metal (conductive metal) 404 is Xia # m, as shown in Figure 8 (q); Step (18) · Use a spin coater to coat the photoresist 105 on the surface of aluminum metal (conductive metal), as shown in Figure 8 (Γ); 11 私The paper size is applicable to the Chinese standard (CNS) A4 X 297 mm) 10 15 20 i I! 1 III ^ iKlIlllfl ^ (Please read the precautions on the back before filling this page) 200409726 V. Description of the invention G Θ A7 B7 PA020644. TWP-12/2 £ One V step (19): The photoresist is exposed and developed in a yellow light process, retaining the shape of the electrode above the photoresist, as shown in Figure 8 (s); (Please read the precautions on the back first (Fill in this page) Step (20). Using a metal rice engraving solution, sequentially place the aluminum metal (conductive metal) and the dielectric layer material without the photoresist protection section. Etch off to complete the fabrication of the fourth and fifth layers of electrodes, as shown in Figure 8 (t); Step (21): Use dry etching plasma ion etching (pksma etching) or wet etching (southern molecular material remover) to sacrifice the polymer The layer material is removed, so that the upper electrode becomes a floating structure 405, and the final switching process is completed, as shown in FIG. 8 (U). Refer to FIG. 9 for the low driving voltage microcomputer turtle microwave switch of the spring spiral arm structure of the present invention. The second flow chart of the manufacturing process can be seen from the figure, among which, `` 2 passes through the cross-section line at the lower pen pole, and passes through the cross-section line at Qin I (AA and B-B 'positions can refer to Figure 14) The process steps are as follows: Step (1): First remove the substrate 100 with metal, 15 machine, oil and other pollutants by standard cleaning procedures to ensure the stability of the process, the flatness of the surface of the substrate 100 and the deposition of materials. Adhesiveness, as shown in Figure 9; Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^;:-Step (2): The first layer of adhesive layer deposition is deposited. This process mainly deposits titanium metal 102. Helps the glass substrate and Adhesion between gold and metal; this deposition metal process uses an electronic grab 20 vapor deposition machine to deposit titanium metal 102 on the surface of a glass substrate. The thickness of titanium metal is 500A, as shown in Figure 9 (b); Step (3): Gold metal 106 is deposited. This process is the main metal material for the transmission line and the lower electrode. There are two methods of deposition. The first method is to directly use electron gun evaporation. The thickness of the coating is 2nd. Chinese National Standard ((^) Α4 g721G X 297 mm) 200409726 A7

Ministry of Economic Affairs Production I I 工 I 消 消 | Fee! ί I 社 I 印! The system I method is to first use an electronic flash evaporation to deposit a seed layer (S Ad, about 500 A, and then use gold clock technology to deposit gold on the seed layer, the plating thickness is about 1 // m, as shown in Figure IX (c); Step (4): Use a spin coater to coat the photoresist 105 on gold metal, as shown in Figure 9 (d); Step (5): Expose and develop the photoresist in a yellow light process to retain the photoresist The shape of the lower electrode and the transmission line is shown in Figure 9; Step ⑹ Use a metal etchant to sequentially etch away the gold metal and the adhesive layer metal that are not protected by the photoresist, and then remove the photoresist to complete the first layer of transmission line 10 And lower electrode 101, as shown in Figures 9 (f) and 9 (g); Step ⑺: Perform the second layer switching process, and use a photoresist 201 coating machine to apply a polymer sacrificial layer material (such as photoresist, Photosensitive polyammonium ammonium, BenzocycIobutene, etc.) are coated on the substrate for the first layer production, as shown in Figure 9 (h); Step ⑻: Expose and develop the photoresist using a yellow light process to form anchor grooves 20, (See Figure 9g); Step ⑼. Gold metal 304 deposition 'This process is the main metal material for the deposition of CDF. There are two methods of the formula. The first method is to directly use an electronic steaming clock, and the thickness of the bell film is 0.S / zm. The second method is to first use an electronic steaming-seed layer, which is about · α, Zaili, Xiao Dian Mining technology deposits gold on the seed layer, the thickness of the plating is about 0.5 centimeters, | as shown in Figure 9①; I ν step (10). Adhesive layer 303 is deposited, this process is mainly It is deposited | Chin metal 'is used as an adhesion layer for gold metal to be bonded to the lower-layer dielectric layer. 、 |-13- .ί! _ Applicable to Chinese National Standard 10 15 20 < Please read the notes on the back before filling this page) Install i! 1 Order — *-Thread * I is ϋ —3 9 I? « -----------------— PAQ2Q644.TWP-14/9 ^ V. Description of the Invention (χ ^ /) This deposition metal process uses an electronic snap-on vapor deposition machine to deposit titanium metal. On the gold surface, the thickness of the titanium metal is 500A, as shown in Figure 9; Step (11): Use a spin coater to coat the photoresist 105 on the surface of the Metal, as shown in Figure 9; 5 Step (12): The photoresist is exposed and developed in a yellow light process, and the shape of the contact of the photoresist is retained, as shown in Fig. 9 (m); Step (13): Using a metal etchant, sequentially place the titanium and gold metal parts that are not protected by the photoresist. Etch off, and then remove the photoresist to complete the production of the third layer of contact30, as shown in Figure 9 and Figure 9 (0); Step 10 (14): The fourth layer switch is made, and plasma assisted chemical vapor deposition is used. System (PECVD), which deposits high dielectric constant materials, such as silicon oxide (SiO2) and silicon nitride (SiNx), on the substrate that has been fabricated in the third layer, and serves as the upper and lower electrodes. Dielectric between the dielectric layer 403. The deposition thickness is… m, as shown in Figure 9 (p); 15 Step ⑽: The upper electrode is fabricated. This process mainly deposits Ming metal (conductive metal) 4G4, and uses an electronic vapor deposition machine to deposit Ming metal (conductive metal). (Metal) is deposited on the surface of the dielectric layer, and the thickness of the aluminum metal (conductive metal) 404 is as shown in FIG. 9 (q);… Step (16): Use a spin coater to coat the photoresist 105 On the surface of Ming metal 20 (conductive metal), as shown in Figure 9 (Γ); Step (17) The photoresist is exposed and developed in a yellow light process, and the shape of the electrode on the photoresist is retained, as shown in Figure 9 Step ⑽: Use the metal rice carving solution to sequentially cut out the metal (conductive metal) and the dielectric layer material that are not protected by photoresist, and complete the fourth (please read the precautions on the back before filling this page) ) n Id— 1 ne / nn ill! — 4 · -14- 200409726 A7 Β7 PA020644.TWP-15/25 V. Description of the invention 10 15 The production of electrodes on the 20th layer of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, as shown in the figure Nine (t) and Fig. 9: Step (19): Plasma ion etching using dry etching piasma etchhlg) or / silk engraving (southern molecular material remover) to remove the polymer sacrificial layer material, so that the upper electrode becomes a suspended structure 405, to complete the final switching process, as shown in Figure IX (V) 〇 By the above The microwave switch structure manufactured by the manufacturing process has a total of four layers of photomasks to manufacture 3 transmission lines, lower electrodes, anchors, contacts, dielectric layers, and upper electrodes. Figure 10 shows the CPW transmission line 10 and the lower electrode 101. It is a cut-off type, in which glass 100 is used as the substrate to deposit the metal layer of the switch layer of the current month; the picture shows the groove 20 of the anchor, and the horse molecular material is used as the sacrificial layer 201, and the polymer material is developed The shape of the anchor groove is shown. Figure 12 is made by cntact30. Cntact30 is connected to the disconnected transmission line. When cntact30 comes in contact with the disconnected transmission line,% i allows the disconnected transmission line to be reached. Figure 13 shows the production of the upper electrode 402 and the dielectric layer 4G3. Its geometry is the combination of the arm beam spring 401. The upper and lower electrodes are used to store charge between the upper and lower electrodes when an electric chirp is applied. Generate electricity Poor, when the applied voltage reaches a certain value, the switch structure can be actuated, and the role of the dielectric layer is to avoid up and down, the absorption can not be separated when the poles are in contact; Figure 14 is the structure completed after removing the sacrificial layer, The method to remove the sacrificial layer is to use dry silver engraving ^ paddle ion surname secretion (polymer material remover). [Features and effects], the low-voltage micro-electromechanical microwave switch provided by the spring arm structure provided by leather 2 hair 11 Compared with other conventional technologies, it has the following advantages (please read the precautions on the back before filling this page) The scale is applicable ^ -15- 200409726

PA020644.TWP-16/25 V. Description of the invention (printed by nF1 A structured low-electricity micro-electromechanical microwave switch manufactured by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. In order to overcome the shortcomings of excessive driving voltage, the structural design uses a cantilever beam combination = Change the transmission distance and reduce the flexibility of the structure ^ support = at the same time to reduce the time required to reduce the switch and shorten the time = _ make the drive switch off the switching speed and reduce the drive dust = reduce the plant and then increase the opening mi — of Low driving voltage MEMS microwave with elastic yellow arm structure = the main structure of the microwave switch based on the MEMS process technology of ^ facet ^ sacrifice layer cutout technique is used to make the structure suspend, so that the switch structure can be operated. In & gt In terms of metal products, re-force j to reduce the process time and process cost. Re-power technology, which can effectively reduce 12 Second, the low drive voltage micro-electro-mechanical microwave switch of the elastic arm structure of the present invention is simulated and It is known from the measurement results that the switching drive voltage can be reduced to less than the chest ts, which is less than the driving voltage of a traditional cantilever-type or thin-film electric valley switch manufactured by MEMS technology. The above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the scope of the patent of the present invention, and any equivalent implementation without departing from the technical spirit of the present invention or Changes should be included in the scope of patents in this case. "In summary, this case is not only innovative in terms of technical ideas, but also can enhance the above-mentioned multiple effects over conventional items. It should have fully complied with the novelty and progressive legality. Requirements for invention patents, apply according to law, and kindly request your office = | to approve this invention patent application, to encourage invention, to the best of your esteem. I -16- _______________________________ This 4 scales are applicable to China National Standard (CNS) A4 size coffee X Norwegian public director) 5 10 15 20

Claims (1)

200409726 A8 BS C3 D8 ΡΑΠ ^ ΠΡί ^ Τ \ Λ / Ρ-Λ7η ^ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, patent application scope 1. A low drive voltage micro-electromechanical microwave switch with a spring swing arm structure, and its process steps As follows: Step (1): First remove the substrate, such as metal, organic, oil, and other pollutants by standard cleaning procedures to ensure the stability of the process, the flatness of the substrate surface and the adhesion of the deposited material; Step (2): proceed Adhesive layer deposition for the first layer of switch. This process mainly deposits titanium metal. It is used to help the adhesion between glass substrate and copper metal before depositing copper metal. This deposition metal process uses an electronic grab vapor deposition machine to deposit titanium metal. Deposition on the surface of the glass substrate; Step 10 (3): copper metal deposition, this process is the main metal material for the transmission line and the lower electrode; Step (4): deposition of a protective layer to prevent copper metal oxidation, using electron gun evaporation Non-oxidizable metal; Step (5): Use a spin coater to coat the photoresist on the protective layer; 15 Step (6): Expose and develop the photoresist in a yellow light process Keep the shape of the electrode and transmission line under the photoresist; Step (7): Use a metal etchant to sequentially etch away the protective layer metal, copper metal, and adhesive layer metal that are not protected by the photoresist, and then remove the photoresist to complete Fabrication of the first layer of transmission line and lower electrode; 20 Step (8): Perform the second layer switching process, use a photoresist coater to coat the polymer sacrificial layer material on the substrate on which the first layer is made; Step (9) ): The photoresist is exposed and developed in a yellow light process, and an anchor groove is formed. Step (10): The third layer switch is made, and the electronic deposition deposition is used. 17- Paper size is applicable to China National Standard (CNS) A4. Specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) Tr tr --- line · 200409726 A8 B8 C8 D8 ΡΑΠ9ΠΑ44 Ding WP-1/95 patent application scope 10 15 Ministry of Economic Affairs intellectual property Bureau ’s consumer cooperative prints 9S 20 protective layer of copper metal to prevent oxidation of copper metal; Step (11): Copper metal deposition is performed. This process is to deposit main metal materials; step (12) • Adhesive layer deposition, The main process is to deposit titanium metal as the adhesive layer for the copper metal to join the dielectric layer of the next process; Step (13): Use a spin coater to coat the photoresist on the surface of the titanium metal; Step (14): In the yellow light process, the photoresist is exposed and developed to retain the shape of the contact of the photoresist. Step (15): Use a metal etchant to sequentially etch away the titanium, copper, and protective metal parts that are not protected by the photoresist, and then Remove the photoresist to complete the production of the third layer of contact; Step (16): Make the fourth layer of switch and use the plasma-assisted chemical vapor deposition line (PECVD) to deposit the high dielectric constant material on the completed The substrate made by the third layer of contact is used as the dielectric layer between the upper and lower electrode plates. Step ⑼: The upper electrode is made. 'The rest is mainly the deposition of metal.' Use the electronic steaming process to deposit IS metal on the surface of the dielectric layer. Step; (18): Use a spin coater to coat the photoresist on the surface of the aluminum metal; & Step (19) 1: Yellow light reel exposure to develop the shape of the electrode on top of the photoresist; -Good quality paper ? National Standards (CNS) A4 size (21〇 x 29 mm (Please read the Notes on the back page and then fill; > 200409726 PA020644 TWP-19/25 A8 B8 C8 D8 VI. Application for patent scope Step (20): Use metal money engraving solution to sequentially etch away #g metal and dielectric layer material without photoresist protection to complete the fourth layer Production of the upper electrode; Step (21): Use dry # 刻 电浆 ION # 刻 (plasma etching) or 5 wet etching (polymer material remover) to remove the polymer sacrificial layer material, so that the upper electrode becomes a suspension Structure, complete the final switching mechanism 2. The low drive voltage micro-electromechanical microwave switch with the spring spiral arm structure described in item 1 of the patent application scope, wherein the titanium metal thickness 10 in step (2) is about 500A. 3. The low drive voltage micro-electromechanical microwave switch with spring-arm structure as described in item 1 of the scope of patent application, wherein the deposition method in step (3) can directly use the electronic steam-steaming key, and the coating thickness is 1 μm . 4. The low-drive 15-voltage micro-electro-mechanical microwave switch of the spring spiral arm structure as described in the first item of the scope of the patent application, wherein the deposition method in step (3) can first use an electron gun to vaporize a seed layer, It is about 500 A, and then copper is deposited on the seed layer by electroplating technology, and the plating thickness is about 1 // m. 5. The low-drive 20-voltage micro-electro-mechanical microwave switch with spring-arm structure described in item 1 of the scope of the patent application, wherein the non-oxidizable metal in step (4) may be nickel, chromium, titanium, gold, etc. The thickness is about 500 A; 6. The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure described in the first item of the scope of the patent application, wherein the polymer sacrificial layer material in this step 为 can be a photoresistive, photosensitive polymer Imidenium and Benzocydobutene -19- scales are applicable to China National Standard (CNS) A4 (210 X 297 mm) --111! -------- ^-* ----- * 11 ^ -11--II I line (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 200409726 A8 B8 C8 D8 ΡΔΠ9ΠΡ ^ 1 ^ T \ Λ / Ρ-9n / 〇g; The Intellectual Property Bureau of the Ministry of Economic Affairs and the Employees ’Cooperative printed the scope of patent application, etc .; 7. The low-driving voltage micro-electromechanical microwave switch of the spring swing arm structure described in item 1 of the scope of patent application, wherein the metal in step (10) Protective layer, deposited about 500 / zm; 5 8. As in the first patent application Low driving voltage microelectromechanical microwave switches of the spiral structure of the spring, wherein the step of metal deposition process (11), the electron gun can be used as vapor deposition, plating thickness of 0.5 / zm. 9- The low driving voltage micro-electromechanical microwave switch of the spring swing arm structure described in item 1 of the scope of the patent application, wherein the method 10 of metal deposition in step (11) can first use an electron gun to shovel a seed layer (seed layer) ), About 500 A, and then copper is deposited on the seed layer by electroplating technology, and the plating thickness is about 0.5 # m. 10. The low driving voltage micro-electromechanical microwave switch with a spring spiral arm structure as described in item 1 of the scope of patent application, wherein the metal deposition process in step (12) 15 uses an electronic vapor deposition machine to deposit titanium metal on the copper surface The thickness of the titanium metal is 500A. 11_ The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure as described in the first item of the scope of the patent application, wherein the high dielectric constant material in step (16) may be silicon oxide (Si02), nitride Silicon (SiNx), etc. 20 12_ The low driving voltage MEMS microwave switch of the spring spiral arm structure described in item 11 of the scope of patent application, wherein the material with a high dielectric constant in the step (16) has a thickness of about 0.2 μm. 13. The low driving voltage micro-electromechanical microwave switch of spring arm structure according to item 1 of the scope of the patent application, wherein the aluminum metal thickness in the step (17) is -20- • This paper size applies to Chinese National Standard (CNS) A4 size (210 X 297 mm) tlf n ϋ «n Mmt in If If il Hu Id 1 annn Tt I one * nn ϋ 1 —i nw 1 (Please read the notes on the back before filling this page) 200409726 A8 B8 C8 D8 —— _____ 一 ΡΑΩ9Ωβ44 Ding WP-The scope of patent application for printing by the Intellectual Property Office of the Intellectual Property Bureau of the Ministry of Economy is about 1 // m. 14. The low drive voltage micro-electromechanical microwave switch of the spring swing arm structure as described in item 1 of the scope of patent application, wherein the aluminum metal can also be any conductive metal. 5 15_ —A kind of low drive voltage MEMS microwave switch with spring swing arm structure. The process steps are as follows: Step (1): First remove the substrate, metal, organic, oil and other pollutants by standard cleaning procedures to ensure the process. Stability, flatness of the substrate surface and adhesion of the deposited material; Step 10 (2): The first layer of adhesive layer deposition is deposited. This process is mainly to deposit titanium metal, which helps the glass substrate and Adhesion between gold and metal; this process of depositing metal uses an electronic grab vapor deposition machine to deposit titanium on the surface of the glass substrate; step (3): gold metal deposition, this process is the main metal material for the deposition transmission line and the 15 lower electrodes Step (4): Use a spin coater to coat the photoresist on gold metal; Step (5): Expose and develop the photoresist in a yellow light process to preserve the shape of the electrodes and transmission lines under the photoresist; Step ( 6): Use a metal etchant to sequentially etch away the gold metal and the adhesive layer 20 that are not protected by the photoresist, and then remove the photoresist to complete the first layer of transmission line and the lower electrode. Step (7): Perform the second layer switching process, and use a photoresist coater to coat the polymer sacrificial layer material on the substrate on which the first layer is made; Step (8): Expose the photoresist in a yellow light process Development process, forming -21-'Zhu paper size applies to China National Standards (CNS) A4 specification (210 X 297 mm) — ill___ill! In —______: _______ ^ (Please read the precautions on the back before filling this page 200409726 A8 C8 D8 PA020644TWP-22/25 Anchor grooves printed and applied for patent scope by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs; Step (9): Gold metal deposition, this process is to deposit the main metal material of the contact. (10): Adhesive layer deposition is performed. This process mainly deposits titanium 5 metal as an adhesive layer for bonding gold metal with the dielectric layer of the next process. Step (11): Use a spin coater to coat the photoresist on On the surface of titanium metal; Step (12): The photoresist is exposed and developed in a yellow light process, and the shape of the contact of 10 photoresist is retained; Step (13): Using a metal etchant, the titanium metal and gold metal are sequentially The photoresist protection part is etched away, and then the photoresist is removed to complete the production of the third layer of contact; Step (14): The fourth layer of switch is made, using a plasma-assisted chemical 15 vapor deposition system (PECVD). The dielectric constant material is deposited on the substrate on which the third layer of contact has been produced, as a dielectric layer between the upper and lower electrode plates; Step (15): The upper electrode is produced. This process mainly deposits aluminum metal. Use an electronic grab vapor deposition machine to deposit aluminum metal on the surface of the dielectric layer 20; Step (16): Use a spin coater to coat the photoresist on the aluminum metal surface; Step (17): Use a yellow light process to apply light Resistive exposure and development process to retain the shape of the electrode on the photoresist; -22- Stupid paper size applies to China National Standard Drug (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page ) Γ Liang 200409726 A8 B8 C8 D8 10 15 Printed by the Consumer Cooperative of the Ministry of Intellectual Property of the Ministry of Commerce 20 Application for patent scope Step ⑽: Use metal money engraving liquid to sequentially discuss the metal and dielectric layers of the photoresist protection part surname Drop, complete the fourth layer of upper electrode production; = (19) ^ use dry money to etch plasma ion etching or wet etching (polymer material remover) to remove the polymer sacrificial layer material 'Let the upper electrode become a floating structure to complete the final switching process. 16. The low driving voltage micro-electromechanical microwave switch of the spring swing arm structure as described in item ls of the patent application scope, wherein the thickness of the metal in this step is about 500A. 17. ^ The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure described in item 15 of the scope of the patent application, wherein the gold metal deposited in step (3) can be directly deposited by electronic flash evaporation, and the thickness of the coating is 18. As for the low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure described in item 15 of the scope of application for patent, the method of gold metal deposition in step (3) may first use electron scavenging to deposit a seed layer ( seedlayer), about 500 A, and then gold is deposited on the seed layer by electroplating technology, and the plating thickness is about 1 / zm. ^ = Low-drive i-pressure micro-electro-mechanical microwave switch with spring-arm structure as described in item 15 of the scope of patent application, wherein the polymer sacrificial material in step (7) is a photoresist, a photosensitive polyurethane, Benzocyclobutene Wait. The low-drive encapsulated micro-electro-mechanical microwave switch with spring-rotated arm structure as described in claim 15 of the patent scope, wherein the gold metal deposition in this step -23-lx Ti II in In (Please read the precautions on the back first (Fill in this page again) 1 ^ 1 n SJi u 15 1 1— nn Ϊ. ”Nl £ fie ifK J Stapled · -line-200409726 Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs A8 B8 CS D8 _________ ΡΑΠ? Ηβ44 TWP -Six The method of applying for a patent can directly use an electron gun to steam the key, and the coating thickness is 0.5 m. 21. The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure according to item 15 of the scope of the patent application, wherein the gold metal deposition method in step (9) may be the first step of depositing a seed layer using electronic flash evaporation ( seed 5 layer), about 50ΘΛ, and then gold is deposited on the seed layer using electroplating technology, and the thickness of the electric clock is about 0.5 // m. 22. The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure according to item 15 of the scope of the patent application, wherein the metal deposition process in step (10) is to deposit titanium metal on gold using an electronic vapor deposition machine. On the surface 10, the thickness of the titanium metal is 500A. The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure as described in the patent application No. 15 of 23 countries, wherein the high dielectric constant material in step (14) may be silicon oxide (Si02), nitride Silicon (SiNx), etc. 24_ The low-drive 15-voltage micro-electro-mechanical microwave switch of the spring spiral arm structure described in item 15 of the scope of patent application, wherein the thickness of the material with a high dielectric constant in step (14) is about 0.2 / im. 2 & _ The low driving voltage micro-electromechanical microwave switch of the spring spiral arm structure as described in item 15 of the scope of patent application, wherein the thickness of the aluminum metal in step (15) is about 1 // m. 20 2 6. The low drive voltage micro-electromechanical microwave switch of the spring swing arm structure described in item 15 of the scope of patent application, wherein the aluminum metal can also be any conductive metal. 27. —A low drive voltage micro-electromechanical microwave switch structure with a spring swing arm structure, which includes a transmission line, a lower electrode, anchor, contact, and a dielectric layer-24- This paper is in accordance with China National Standard (CNS) A4 (210 X 297mm 1 Thief '~ (Please read the notes on the back before filling this page) 1 —i 1: 1- 1 n «8— If nn ϋ 1 · ί · vn n ti 18 Is * I Binding: 200409726 A8 Βδ C8 DS 10 15 The scope of patent application and upper electrode; The transmission line is a disconnected type, in which glass is used as the substrate and the first metal layer of the switch is deposited; the groove of the anchoror is formed by using polymer materials as the Sacrificial layer, and then develop the polymer material into the shape of anchor groove; the contact is used to connect the disconnected transmission line; when the contact is in contact with the disconnected transmission line, the disconnected transmission line can be connected to achieve signal conduction; The geometry of the electrode and the dielectric layer is a combination of a cantilever beam and a spring. The upper and lower electrodes function to store a charge between the upper and lower electrodes when a voltage is applied to generate a potential difference. When the applied voltage reaches a certain level, In this case, the switch structure can be activated, and the role of the dielectric layer is to prevent the upper and lower electrodes from being adsorbed and cannot be separated, and to prevent the switches from being blown by the current conduction of the upper and lower electrodes. The voltage micro-electro-mechanical microwave switch of the spring arm structure mentioned above, wherein the substrate can also be selected from glass substrates, quartz substrates, low-temperature co-fired ceramics (LTCC), high-resistance silicon wafers, and gallium arsenide substrates (please first Read the notes on the back and fill in this page.) Il · • line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-25-