TW200408723A - Method for selectively depositing nano carbon structure on silicon substrate - Google Patents

Abstract

A method for selectively depositing a nano carbon structure on a silicon substrate comprises sequentially: specifying a region on a silicon substrate for growing a nano carbon structure; growing a metallic silicide on the specified region; and using a chemical vapor deposition to grow a nano carbon structure on the surface of the metallic silicide. Since the metallic silicide region on the silicon substrate is the region used for growing a nano carbon structure, an objective of selectively depositing a nano carbon structure is achieved accordingly. Furthermore, the metallic silicide region is formed by a semiconductor process, a method according to the present invention has a high compatibility with the current semiconductor facilities.

Description

200408723

V. Explanations (1) The technical field to which the invention belongs f. The invention relates to a method for selectively depositing a carbon nanostructure on a silicon substrate ^ f ^ can be applied to a semiconductor element as a connection line between a contact window and a metal 'or Electron emission source for a field emission display. Previous technologiesSince Dr. Iijima discovered the carbon nanostructure in i 9 9 i, the research and application of nano material technology and biotechnology and photovoltaic δ-hole technology have become the most popular in the scientific and engineering circles today. Significance. Carbon nanotubes (carbon nanotubes, CNTs)

) / Carbo nanofiber, chemical properties of a special cylindrical tube structure composed of a square carbon atom lattice, such as: 1. a hundred times or even a thousand times the tube length / diameter ratio 2 · depending on the structure rotation and defects Good electrical conductivity. 3 · Good thermal conductivity (similar to diamond). 4 · High Young's coefficient: about 5 times that of terapascals steel. Synthetic methods commonly used to synthesize carbon nanostructures such as arc discharge method, chemical vapor deposition method, laser ablation vaporization, etc., among which 4 Vapor deposition has the most advantages. Because it can be directly deposited on the substrate and CNF), because it is made of six, it has unique physical and semiconducting properties and superconductivity (8 times that of carbon fiber)

Page 6 200408723 V. Description of the invention (2) High purity nano tube is obtained, so it has great potential for commercial application. In addition, an advantage of using the chemical vapor deposition method is that a catalyst must be added to form a carbon nanostructure, that is, the catalyst determines where the carbon nanostructure grows. Existing selective deposition methods, such as: molecular sieve method, selective implantation of seed crystals, or coating of seed crystals and sol-gel on substrates, etc., are considered in manufacturing processes and instruments , Less compatible with existing semiconductor technology. In addition, in the existing technology, a process must be added to a substrate prepared with an existing pattern to deposit a catalyst film. Whether the catalyst film can be effectively controlled in the place where it is to grow is not easy, resulting in poor selectivity of the growth carbon nanostructure. In view of this, the present inventors have exhausted their minds and relying on their many years of experience in related research, the invention has finally come into being. Therefore, the present invention provides a new process technology that can easily and accurately selectively deposit carbon nanostructures on a silicon substrate. This process method can simultaneously complete the production of catalyst thin film deposition during patterning, and then use chemical vapor deposition to grow the carbon nanostructure on the catalyst thin film, so as to selectively deposit the carbon nanostructure on the silicon crystal. Purpose on the substrate. In addition, the method of the present invention is highly compatible with the existing semiconductor process technology, and can be directly applied to the existing semiconductor process without the need for too many additional equipment, which is beneficial to the process planning of the semiconductor or related industry. Object of the invention Therefore, the main object of the present invention is to provide a selective sinker.

200408723 V. Explanation of T (3) The method of depositing carbon nanostructures on broken crystal substrates' hunting the semiconductor process to grow metal silicides on the broken substrates, and then growing carbon nanometers on the surface of the metal silicides structure. SUMMARY OF THE INVENTION In order to achieve the above object, the present invention is realized as follows: a method for selectively depositing a carbon nanostructure on a silicon substrate, which includes at least the following steps in order: (a) determining the carbon to be grown on the silicon substrate Nanostructured area by

(i) depositing a layer of silicon dioxide on a silicon substrate, and (ii) using a semiconductor process technology to transfer the mask pattern onto the silicon substrate, and the mask pattern defines a region where a carbon nanostructure is to be grown, (b) growing a metal silicide in a region where a carbon nanostructure is to be grown, and depositing a metal thin film by (iii); and (iv) using a rapid temperature heat treatment method to grow the metal silicide, and the growth region of the metal silicide is a metal thin film The contact area with the silicon substrate; and (v) removing the metal thin film without forming metal silicide by using a chemical etching method; (c) growing a carbon nanostructure on the surface of the metal silicide by chemical vapor deposition.

Page 8 200408723 V. Description of the invention (4) Implementation mode In order for your review committee to further understand the structural features and effects of the present invention, the following specific examples will be used in conjunction with the accompanying drawings to make the present invention The detailed explanation is as follows:

Please refer to Figure 1, which is a flowchart of the method of the present invention, which can be divided into: (a) the area on the silicon substrate that determines the carbon nanostructure structure to be grown; 10; (b) the carbon nanostructure to be grown There are three main steps to grow metal silicide 20 and (c) on the surface of the metal structure by using chemical vapor deposition to grow carbon nanostructure 30 on the surface of the metal silicide. Among them, the area 10 on the silicon substrate that determines the carbon nanostructure to be grown is firstly deposited a layer of silicon dioxide on the silicon substrate 110, which can be achieved by thermal oxidation or chemical vapor deposition. Then, the semiconductor mask technology is used to transfer the photomask pattern to the silicon substrate 102, which includes: using yellow light lithography to coat the photoresist on the wafer, and then photolithography, exposure, development, and photoresist removal. The mask pattern is transferred to the silicon substrate, and the mask pattern is the area where the carbon nanostructure is to be grown. Then, the unprotected part is etched by etching to complete the transfer of the mask pattern to the silicon. Purpose on the crystal substrate.

To grow metal silicide 20 in the area where carbon nanostructures are to be grown, first deposit a metal thin film 210 on the silicon substrate. The metal used can be iron (Fe), cobalt (Co), nickel ( Ni), # mesh (Mo), titanium (Ti), town (W) or starting (Pt) any metal or its alloy, and the thickness of the deposited metal film is 5 angstroms ~ 1 2 0 0 angstroms; Metal silicide 2 0 2 is then grown by a rapid temperature heat treatment method. In this process, only the metal thin film is straight.

Page 9 200408723 Fifth, issued: clearly stated (5) the metal thin film in the area in contact with the silicon crystal will react with the silicon to form a metal silicide; after the metal silicide is formed, the chemical etch method is used to remove the non-metallic stone oxide Of metal thin film 2 0 3. Until now, the metal silicide transferred by the mask pattern has been successfully generated on the silicon substrate through the semiconductor process. The metal silicide pattern is the growth area of the carbon nanostructure. This is because of the carbon nanometer. During the growth of the structure, metal silicide was used as the catalyst. Therefore, after the pattern wafer is completed, the carbon nanostructure 30 can be grown by chemical vapor deposition on the surface of the metal silicide, and the chemical vapor deposition method such as: microwave plasma chemical vapor

Deposition method, electron cyclotron resonance chemical vapor deposition method and thermochemical vapor deposition method. Please refer to FIG. 2, which is a diagram of an embodiment of the method of the present invention: (a) Determine the area of the carbon nanostructure to be grown on the silicon substrate 1 0 Step 1 0 1: Deposit a layer of silicon dioxide B on Silicon substrate A; Step 102: Use a semiconductor process technology to transfer the mask pattern C to the silicon substrate A. The mask pattern C defines the area where the carbon nanostructure grows; (b) where you want to grow Growth of metal silicide in the carbon nanostructure region 2 Step 2 0 1 ·· Deposit a metal thin film D on the silicon substrate A; Step 202: Use rapid temperature heat treatment to grow metal silicide E, of which only The metal film D in the area directly contacting the silicon substrate A will react with the silicon to form the metal cleaved compound E. In addition, the unreacted metal film D 'covers the metal silicide E.

Page 10 200408723 V. Description of the invention (6) Step 2 0 3 party; Use chemical etching method to remove the metal thin film (D, D ') where no metal silicide is formed;' The metal silicide E is exposed; (c) on the metal stone The carbon nanostructure can be grown by chemical vapor deposition on the surface of the chemical compound. 3 Because the metal silicide E is the catalyst for growing the carbon nanostructure F, the carbon nanostructure can only be grown in the region of the metal oxide E Structure F (such as carbon nanofiber, carbon nano tube, etc.).

Please refer to FIG. 3 for the result of a carbon nanotube G grown using the present invention under a Scanner Electron Microscopic (SEM) (deposition conditions: CH4 / H2: 10/100 seem / seem Pressure: 12-16 Torr; microwave power: 800 watt; time · 10 min) 〇 Shi Xihua area as a conductor element, as shown) ·, or the field due to the scope of the present structure, can be connected between Line emission source (as in the Ming series using metal directly applied to the half (as shown in Figure 4 and Figure 5). Growing carbon nano-junctions as described in the contact window and golden display electronics before the 'selective carbon deposition of the present invention The half way is based on the chemical vapor deposition method to grow carbon nano particles: = silicide is a catalyst material 'so the area of the metal silicide ^ is the carbon Hui %%; and' the process of the present invention and the semiconductor process High compatibility, 1: = use in existing semiconductor process without much extra equipment = connect j

Page 11 200408723 V. Description of Invention (7) It claims to be creative and progressive, and meets the statutory requirements of an invention patent, and submits an invention patent application according to law. Although the present invention is disclosed as above with a preferred embodiment, it is not intended to limit the scope of implementation of the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. That is, all equal changes and modifications made in accordance with the present invention shall be covered by the scope of the patent of the present invention. The definition shall be based on the scope of patent application.

Page 12 200408723 Brief Description of Drawings Figure 1 is a flowchart of the method of the present invention. Figure 2 is a diagram of an embodiment of the method of the present invention. Figure 3 is a result of a carbon nanotube grown using the present invention under a scanning electron microscope. Fig. 4 is a schematic view of a carbon nanotube grown on a semiconductor element using the present invention. Fig. 5 is a schematic diagram of an electron emission source of a field emission display using a carbon nanotube grown in the present invention. Ming said Shan Jan # Picture

D

IX ο ο 2 ο > Structure k · The base of a material Σ film 卜 卜 Bebekization diagram thin anti-silicon rice M Crystal oxygen mask belongs to Nai U, silicon two light gold gold carbon In the structure of the domain, the length of the nano-carbon of the rice material is cut into two layers of silicon oxide and silicon oxide.

ο 2 1 ± 0 / ^ 00 ο ο ο 2 2 2 Physiochemical silicon belongs to the long-structured primary crystal domains of gold. The structure transfer is carried over to the case. The nano-carbon cover is long and bright. Physicochemical silicon is a film of gold and thin silicon is a genus of gold.

Page 13 200408723 Schematic description of 3 0 · · · • Growth of carbon nanostructures by chemical vapor deposition

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Claims (1)

200408723 VI. Scope of patent application ^ 1 · A method for selectively depositing carbon nanostructures on silicon substrates, including at least the following steps in order: (a) determining the area on the silicon substrates where carbon nanostructures are to be grown By: (i) depositing a layer of silicon dioxide on a silicon substrate, and (ii) using a semiconductor process technology to transfer the mask pattern to the silicon substrate, and the mask pattern defines the carbon nanometer to be grown Area of the structure; (b) growing a metal silicide in the area where the carbon nanostructure is to be grown, by: (iii) depositing a metal thin film; and (iv) growing a metal silicide using a rapid temperature rise heat treatment method, the growth area of the metal silicide is a contact area between the metal thin film and the silicon crystal substrate, and (v) using a chemical etching method to remove Generate a metal thin film of metal silicide; (c) use chemical vapor deposition to grow a carbon nanostructure on the surface of the metal silicide. 2 · Selectively deposited carbon nanostructure as described in the first patent application A method for forming a silicon substrate, wherein the deposited metal film is iron (F e), starting (Co), nickel (Ni) 'IS (Mo), titanium (Ti), tungsten (W), or starting ( Any of Pt) metals or alloys thereof. 3. The method for selectively depositing a carbon nanostructure on a silicon substrate as described in item 1 of the scope of the patent application, wherein the thickness of the deposited metal film is Page 15 200408723 VI. The scope of patent application is 5 Angstroms ~ 1 200 Angstroms. 4 · The method for selectively depositing carbon nanostructures on a substrate of Shi Xijing as described in item 1 of the scope of patent application, wherein the chemical vapor deposition method is a microwave plasma chemical vapor deposition method. 5. The method for selectively depositing carbon nanostructures on a sill crystal substrate as described in item 1 of the scope of the patent application, wherein the chemical vapor deposition method is an electron cyclotron resonance chemical vapor deposition method. 6. The method for selectively depositing a carbon nanostructure on a sill crystal substrate as described in item 1 of the scope of the patent application, wherein the chemical vapor deposition method is a thermochemical vapor deposition method. Page 16