TW200407955A - Pattern developing device of substrate - Google Patents

Pattern developing device of substrate Download PDF

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Publication number
TW200407955A
TW200407955A TW91132819A TW91132819A TW200407955A TW 200407955 A TW200407955 A TW 200407955A TW 91132819 A TW91132819 A TW 91132819A TW 91132819 A TW91132819 A TW 91132819A TW 200407955 A TW200407955 A TW 200407955A
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Taiwan
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substrate
developer
buffer tank
developing device
spraying
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TW91132819A
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Chinese (zh)
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TW567536B (en
Inventor
Zhen-Nan Zhou
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Au Optronics Corp
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Publication of TW200407955A publication Critical patent/TW200407955A/en

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  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The invention relates to a pattern developing device of substrate, which comprises a pattern developer buffer sink with area at least equal to that of substrate. The pattern developer buffer sink provides multiple sprinklers to control developer pressure applying unit and developer supply unit via a developer control unit so that the flow pressure and flow speed of developer in the developer buffer sink can be controlled and substrate surface can be simultaneously sprayed with developer uniformly.

Description

200407955 A7 -------B7_ 五、發明説明(1 ) 【本發明之領域】 本發明係關於一種基板顯影裝置,尤指一種可同時均 勻喷灑顯影液於基板表面之顯影裝置。 【本發明之背景】 在半導體製程、微機電製程或是液晶顯示器製程中, 進行黃光製程時,在曝光處理與蝕刻處理之間,進行一顯 影處理,以於基板表面上使已曝光之光阻形成圖樣 (pattern)。而一般顯影處理之設備,如第i圖習知基板顯 影裝置之實體示意圖所示,多為一基板丨固定於基板固定 單元2之上,且在該基板丨表面上有一喷灑裝置3以噴灑顯 影液。該噴灑裝置3包括一顯影液控制單元31、顯影液供 給單元321、以及噴灑單元33,而該顯影液控制單元”係 控制顯影液之流量且藉由顯影液供給單元3 2丨將顯影液送 至喷灑單元3 3,以將顯影液喷灑至基板1表面,來對已受 過曝光之光阻進行顯影作用。然而,由於該噴灑裝置3係 由基板1表面之一端噴灑至基板1表面之另一端,往往所花 費义時間頗長,此一時間差將造成基板丨表面兩端的光阻 之顯影反應時間不一,因而導致基板表面圖樣線寬及光阻 厚度呈不均勻現象。此現象在基板1之尺寸越大時,由於 顯影液噴灑機由基板一端喷灑顯影液至基板另一端噴灑顯 影液之時間差異越大,圖樣線寬及光阻厚度呈不均勻現象 更為明顯,現象越嚴重,因之使得產品良率降低。對於製 網用中國國家標準八4規格獻公釐) - ----- f請先閲讀背面之注意事項再填寫本頁各襴) ---------訂---------. 200407955 五、發明説明(2 ) 造大面積之平面顯示面板時,造成生產良率降低 非常地嚴重。 ’ 發明人爰因於此,本於積極發明之精神,亟思一種 以解決上述問題之「基板顯影裝置」,幾經研^驗q 完成此項之發明。 '' 【本發明之概述】 本發明之主要目的係在提供一種基板顯影裝置,俾 能同時對基板表面均勻喷灑顯影液,降低基板顯影時間之 差異’以提升基板表面之線寬與光阻均勻度。 為達前述之目的,本發明所提出之基板顯影裝置係配 合至少一基板,並主要包含:一基板固定單元,以固定支 持該基板;一顯影液緩衝槽,該顯影液緩衝槽具有複數個 噴灑單元以均勻噴灑顯影液於該基板表面;以及一顯影液 供給單元,係供給顯影液於該顯影液緩衝槽,其中,該顯 影液緩衝槽之面積不小於該基板之面積。 由於本發明構造新穎,能提供產業上利用,且確有增 進功效,故依法申請發明專利。 【圖式簡單説明】 第1圖係習知基板顯影裝置之實體示意圖。 第2圖係本發明基板顯影裝置之實體示意圖及顯影液緩衝 槽表面之喷灑早元分佈的一較佳實施例之示音圖。 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁各欄) 丁- β • —ϋ ai n ϋ·1 I Bi^i in--·、· Βϋ —ϋ in n n i^i ϋ i 丨· 200407955200407955 A7 ------- B7_ V. Description of the Invention (1) [Field of the Invention] The present invention relates to a substrate developing device, and more particularly to a developing device capable of spraying a developing solution uniformly on the substrate surface at the same time. [Background of the present invention] In a semiconductor process, a micro-electro-mechanical process, or a liquid crystal display process, during the yellow light process, a development process is performed between the exposure process and the etching process to expose the exposed light on the substrate surface. Resistance forms a pattern. The general development processing equipment, as shown in the physical schematic diagram of the conventional substrate developing device in FIG. I, is mostly a substrate 丨 fixed on the substrate fixing unit 2, and a spraying device 3 on the surface of the substrate 丨 for spraying Developer. The spraying device 3 includes a developer control unit 31, a developer supply unit 321, and a spray unit 33, and the developer control unit "controls the flow rate of the developer and sends the developer through the developer supply unit 3 2 丨To the spraying unit 33 to spray the developing solution on the surface of the substrate 1 to develop the exposed photoresist. However, since the spraying device 3 sprays from one end of the surface of the substrate 1 to the surface of the substrate 1 At the other end, it usually takes a long time. This time difference will cause the development reaction time of the photoresist on the two sides of the substrate to be different, which will cause the line width and photoresist thickness of the substrate surface to be uneven. This phenomenon occurs on the substrate. The larger the size of 1, the larger the time difference between the developer spraying machine spraying the developer from one end of the substrate to the developer spraying at the other end of the substrate, the more uneven the pattern line width and the thickness of the photoresist, the more serious the phenomenon. , Which makes the product yield lower. For the national network for the use of the Chinese National Standard 8 4 specifications)------ f Please read the precautions on the back before filling in this page 襕)- -------- Order ---------. 200407955 V. Description of the Invention (2) When a large-area flat display panel is manufactured, the production yield rate is reduced very seriously. Here, based on the spirit of active invention, we are eager to think of a "substrate developing device" that solves the above problems. After several researches, we have completed this invention. '' [Overview of the present invention] The main purpose of the present invention is to provide a substrate developing device, which can spray the developing solution evenly on the substrate surface at the same time, and reduce the difference in substrate development time to increase the line width and photoresistance of the substrate surface. Evenness. In order to achieve the foregoing object, the substrate developing device provided by the present invention is equipped with at least one substrate, and mainly includes: a substrate fixing unit for fixing and supporting the substrate; a developing solution buffer tank, the developing solution buffer tank having a plurality of sprays The unit sprays the developing solution uniformly on the surface of the substrate; and a developing solution supply unit supplies the developing solution to the developing solution buffer tank, wherein the area of the developing solution buffer tank is not less than the area of the substrate. Since the present invention has a novel structure, can provide industrial use, and does have an increasing effect, it applies for an invention patent in accordance with the law. [Brief description of the drawings] FIG. 1 is a physical diagram of a conventional substrate developing device. Fig. 2 is a physical schematic diagram of the substrate developing device of the present invention and a sound diagram of a preferred embodiment of the distribution of the spray element on the surface of the developing solution buffer tank. This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) (Please read the notes on the back before filling out the columns on this page) Ding-β • —ϋ ai n ϋ · 1 I Bi ^ i in-- ·, · Βϋ —ϋ in nni ^ i ϋ i 丨 · 200407955

五、發明説明(3 (1 ) (2 ) (3 ) (31 ) (321 (322) 顯影液加壓單元 (33) 噴灑單元 (34) 顯影液緩衝槽 【圖號説明 基板 基板固定單元 喷灑裝置 顯影液控制單元 顯影液供給單元 【較佳具體實施例之詳細説明】 本發明之基板顯影裝置之顯影液緩衝槽形狀無限制, 較佳為方形或圓形,或該顯影液緩衝槽為一水平曲折分佈 <官路。本發明之基板顯影裝置之顯影液緩衝槽之大小為 至少顯影液緩衝槽之面積不小於該基板之面積,較佳為顯 影液緩衝槽之面積大於該基板之面積。本發明之基板顯影 裝置可以視需要地設置其他單元以增加其功能,較佳為視 需要地更包含一顯影液加壓單元,以提供顯影液壓力以均 勻噴灑於該基板或視需要地更包含一顯影液控制單元,以 控制該顯影液均勻噴灑於該基板位置,流量及壓力;最佳 為至少一管路與該顯影液供給單元連接或與該顯影液控制 單元連接。本發明之基板顯影裝置之喷灑單元無限制,較 佳為位於該顯影液緩衝槽表面之噴灑孔或噴嘴◦適用於本 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁各攔) ---------訂---------#1. 200407955 A7 --——_____B7_ 五、發明説明(4 ) 發明之基板無限制,該基板較佳為半導體矽基板或平面顯 示面板。 為使貴審查委員能進一步瞭解本發明之結構、特徵 及其目的,茲附以圖示及較佳具體實施例之詳細説明如 后: 有關本發明之基板顯影裝置之一較佳實施例,請先參 照第2圖所示該裝置之實體示意圖及顯影液緩衝槽表面之 噴灑單元分佈的一較佳實施例之示意圖,該基板顯影裝置 係主要配合一基板丨,包括基板固定單元2及噴灑裝置3等 主要構件所組成。其中,該噴灑裝置3更包括顯影液控制 單元3 1、顯影液供給單元321、顯影液加壓單元322、喷 灑單元33、以及顯影液緩衝槽34等主要構件。 雨述之基板固定單元2,可例如為一 s p i n 〇 h u c k,係位於 基板1之下方,且以吸附的方式吸住該基板1以達到固定之 功效’而該噴灑裝置3係位於基板1之正上方,且其中的顯 影液控制單元31係位於顯影液加壓單元322之上方,並控 制該顯影液加壓單元3 2 2以產生一液壓,而該液壓將會對 連接於下方的顯影液緩衝槽34中的顯影液產生控制作用, 即該液壓之大小可控制顯影液緩衝槽3 4中的顯影液輸出之 流量及流速,而該顯影液係由顯影液供給單元3 2丨所供 給,該顯影液緩衝槽3 4下方更具有複數個噴灑單元3 3, 俾供顯影液由其均勻噴灑出。 前述之顯影液緩衝槽34之平面面積係採用一大於或等 於基板1表面面積之裝置,且該顯影液緩衝槽34面對基板 7 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ---- (請先閲讀背面之注意事項再填寫本頁各欄) ---------訂--------- 2UU4U/y:>^ 五、發明説明(5 ) :表面《平面’平均分佈有複數個噴灑單元(噴灑孔 3 ’而該噴灑單元(噴灑孔)”之噴嘴之孔徑或孔量之 卞:由=1面積大小來設定,較佳情況為具有孔徑細 小、且細治、分佈之噴灑孔所形成。 本發明之基板顯影裝置之另一較佳實施例,請參 3圖所示。該顯影液緩衝槽34呈現為一管路,其係呈:平 $折刀佈’並與孩被顯影基板表面平行,其中該管路之兩 场係與邊顯景>硬供給單元連接或與該顯影液控制單元連 ^且該管路的顯影液供給單元321係直接由顯影液控制 單兀3 1控制其顯影液之流速與流壓之大小;各管路之上, 面^基板之一側,具有複數個噴灑單元(噴灑孔),該噴 灑單7G (噴;麗孔)3 3係藉由管路連接至顯影液供給單元 32 1、’且位置均句㈣於該等支架交接處。其顯影液之喷 灑方式如則較佳例,惟於本實施例中,顯影液緩衝槽係 以一管路之形式呈現。 由以上之説明可知,本發明係以一不小於基板3平面 =積灸顯影液缓衝槽3 4來對基板丨表面做顯影處理,並以 多數分佈於該顯影液緩衝槽34下方表面之喷灑單元3 3來 同時均勻地對該基板丨噴灑顯影液,當基板需要進行顯影 時’由喷麗單元3 3近乎同時且均勻地對該基板1噴灑顯影 液’減少顯影反應之時間落差,所以可以提升基板1表面 之線寬與光阻之均勻度。 系示上所陳’本發明無論就目的、手段及功效,在在均 顯不其迴異於習知技術之特徵,為「基板顯影裝置」之一 (請先閲讀背面之注意事項再填寫本頁各欄) ---------、可--------- #V. Description of the invention (3 (1), (2), (3), (31), (321, 322) developer pressurizing unit (33), spraying unit (34), developer buffer tank [Figure No. illustrates substrate substrate fixing unit spraying Device developer control unit developer supply unit [detailed description of preferred embodiments] The shape of the developer buffer tank of the substrate developing device of the present invention is not limited, preferably square or circular, or the developer buffer tank is a Horizontal zigzag distribution < official road. The size of the developing solution buffer tank of the substrate developing device of the present invention is at least the area of the developing solution buffer tank is not less than the area of the substrate, preferably the area of the developing solution buffer tank is larger than the area of the substrate. The substrate developing device of the present invention may be provided with other units as needed to increase its function. It is preferable to further include a developer pressurizing unit as needed to provide the pressure of the developer to spray uniformly on the substrate or as needed. A developer control unit is included to control the position, flow rate and pressure of the developer evenly sprayed on the substrate; preferably, at least one pipeline is connected to the developer supply unit or connected to the developer supply unit. The developing liquid control unit is connected. The spraying unit of the substrate developing device of the present invention is not limited, preferably a spraying hole or a nozzle located on the surface of the developing solution buffer tank. Applicable to this paper size is applicable to China National Standard (CNS) A4 specifications ( 210X297 mm) (Please read the precautions on the back before filling in the blocks on this page) --------- Order --------- # 1. 200407955 A7 ------_____ B7_ V. Explanation of the invention (4) There is no limitation on the substrate of the invention, and the substrate is preferably a semiconductor silicon substrate or a flat display panel. In order to allow your reviewers to further understand the structure, characteristics and purpose of the present invention, the drawings and preferred The detailed description of the specific embodiment is as follows: For a preferred embodiment of the substrate developing device of the present invention, please refer to the physical diagram of the device shown in FIG. 2 and a preferred distribution of the spray unit on the surface of the developing solution buffer tank. Schematic of the embodiment, the substrate developing device is mainly matched with a substrate, and includes the main components such as the substrate fixing unit 2 and the spraying device 3. Among them, the spraying device 3 further includes a developing solution control unit 31. The main components such as the film supply unit 321, the developer pressurizing unit 322, the spraying unit 33, and the developer buffer tank 34. The substrate fixing unit 2 described in the rain can be, for example, a spin OHuck, which is located below the substrate 1. And the substrate 1 is sucked in an adsorption manner to achieve a fixed effect ', and the spraying device 3 is located directly above the substrate 1, and the developer control unit 31 is located above the developer pressurizing unit 322, and The developer pressurizing unit 3 2 2 is controlled to generate a hydraulic pressure, and the hydraulic pressure will control the developer in the developer buffer tank 34 connected below, that is, the magnitude of the hydraulic pressure can control the developer buffer tank 3 The flow rate and flow rate of the developing solution output in 4, and the developing solution is supplied by the developing solution supply unit 3 2 丨, and there is a plurality of spraying units 3 3 below the developing solution buffer tank 34, and the developing solution is supplied by it. Spray evenly. The planar area of the aforementioned developer buffer tank 34 is a device that is greater than or equal to the surface area of the substrate 1, and the developer buffer tank 34 faces the substrate 7. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm). ) ---- (Please read the notes on the back before filling in the columns on this page) --------- Order --------- 2UU4U / y: > ^ V. Description of the invention (5): The surface of "the plane is evenly distributed with a plurality of spraying units (spraying holes 3 'and the spraying unit (spraying holes)"), the diameter or the number of holes of the nozzle: set by = 1 area size, preferably It is formed by a spray hole with a small hole diameter, and is finely divided and distributed. Another preferred embodiment of the substrate developing device of the present invention is shown in FIG. 3. The developing solution buffer tank 34 is shown as a pipe. The system is: "Folding knife cloth" and parallel to the surface of the substrate being developed, wherein the two fields of the pipeline are connected to the side view > hard supply unit or to the developer control unit ^ and the pipeline's The developer supply unit 321 is directly controlled by the developer control unit 3 1 to control the velocity and pressure of the developer. Size; on each side of the pipeline, there is a plurality of spraying units (spraying holes) on one side of the substrate, and the spraying unit 7G (spraying; beautiful holes) 3 3 is connected to the developer supply unit 32 by pipelines. ", And the positions are sentenced to the junctions of these brackets. The spraying method of the developer is preferred, but in this embodiment, the developer buffer tank is presented in the form of a pipeline. From the above It can be seen that the present invention uses a plane not less than the plane of the substrate 3 = the buffer solution for the moxibustion developing solution 34 to develop the surface of the substrate 丨, and most of the spraying units 3 distributed on the lower surface of the developing solution buffer tank 34 3 to spray the developer uniformly on the substrate at the same time. When the substrate needs to be developed, 'the spraying unit 3 3 sprays the developer to the substrate almost simultaneously and uniformly' to reduce the time difference of the development reaction, so the substrate can be improved. 1 The line width of the surface and the uniformity of the photoresist. It is shown in the above that the present invention, regardless of the purpose, means and effect, shows the characteristics that are different from the conventional technology, and is the "substrate developing device". One (Please read the note on the back first (Please fill in the columns on this page) --------- 、 may --------- #

200407955 A7 B7 五、發明説明(6 ) (請先閲讀背面之注意事項再填寫本頁各攔) 大突破,懇請鈞局明察,早日賜准專利,俾嘉惠社會, 實感德便。惟應注意的是,上述諸多實施例僅係為了便於 説明而舉例而已,本發明所主張之權利範圍自應以申請專 利範圍所述為準,而非僅限於上述實施例。 9 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)200407955 A7 B7 V. Description of the invention (6) (Please read the notes on the back before filling in the blocks on this page) Great breakthrough, I urge the Bureau to make a clear observation, grant a quasi-patent at an early date, and benefit the society. However, it should be noted that the above-mentioned embodiments are merely examples for the convenience of description. The scope of the claimed rights of the present invention should be based on the scope of the patent application, rather than being limited to the above-mentioned embodiments. 9 This paper size applies to China National Standard (CNS) A4 (210X297 mm)

Claims (1)

200407955 ABCD /、、申請專利範圍 1 · 一種基板顯影裝置,係配合至少一基板,包含: 一基板固定單元,以固定支持該基板; 一顯影液緩衝槽,該顯影液緩衝槽具有複數個噴灑單 元以均勻噴灑顯影液於該基板表面;以及 —顯影液供給單元,係供給顯影液於該顯影液緩衝 槽; 其中該顯影液緩衝槽之面積不小於該基板之面積。 2 ·如申請專利範圍第1項所述之基板顯影裝置,其更 包含—顯影液加壓單元,以提供顯影液壓力以均勻喷灑於 該基板。 3.如申請專利範圍第1項所述之基板顯影裝置,其更 包含一顯影液控制單元,以控制該顯影液均勻噴灑於該基 板位置,流量及壓力。 4 ·如申請專利範圍第1項所述之基板顯影裝置,其 中為噴灑單元為位於該顯影液緩衝槽表面之噴灑孔或喷 嘴。 八 ^ 5 ·如申請專利範圍第1項所述之基板顯影裝置,其中 該顯影液緩衝槽為一水平曲折分佈之管路;其中該管路之 兩端係與該顯影液供給單元連接或與該顯影液控制單元連 接。 6·如申請專利範圍第1項所述之基板顯影裝置,其中 該基板為半導體矽基板或平 面顯不面板。 10 樓本紙張尺度適用中國國家標準(CNS) A4規格(210X297公產)' -- (請先閲讀背面之注意事項再填寫本頁各欄) 裝200407955 ABCD / 、 Applicable patent scope 1 · A substrate developing device, which is matched with at least one substrate, includes: a substrate fixing unit for fixing and supporting the substrate; a developer buffer tank, the developer buffer tank having a plurality of spraying units The developer is sprayed uniformly on the surface of the substrate; and the developer supply unit supplies the developer to the developer buffer tank; wherein the area of the developer buffer tank is not less than the area of the substrate. 2. The substrate developing device according to item 1 of the scope of the patent application, further comprising a developing solution pressurizing unit to provide a developing solution pressure for uniform spraying on the substrate. 3. The substrate developing device according to item 1 of the patent application scope, further comprising a developer control unit to control the position, flow rate and pressure of the developer evenly sprayed on the substrate. 4 · The substrate developing device according to item 1 of the scope of patent application, wherein the spraying unit is a spraying hole or a nozzle located on the surface of the developing solution buffer tank. ^ 5 · The substrate developing device according to item 1 of the scope of the patent application, wherein the developer buffer tank is a horizontally zigzag pipeline; two ends of the pipeline are connected to the developer supply unit or connected to the developer supply unit. The developer control unit is connected. 6. The substrate developing device according to item 1 of the scope of patent application, wherein the substrate is a semiconductor silicon substrate or a flat display panel. The paper size on the 10th floor applies the Chinese National Standard (CNS) A4 (210X297).-(Please read the precautions on the back before filling in the columns on this page).
TW91132819A 2002-11-07 2002-11-07 Substrate developing-apparatus TW567536B (en)

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