TW200407261A - A method for trimming an array of carbon nanotubes - Google Patents

A method for trimming an array of carbon nanotubes Download PDF

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TW200407261A
TW200407261A TW91133216A TW91133216A TW200407261A TW 200407261 A TW200407261 A TW 200407261A TW 91133216 A TW91133216 A TW 91133216A TW 91133216 A TW91133216 A TW 91133216A TW 200407261 A TW200407261 A TW 200407261A
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TWI257916B (en
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Liang Liu
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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Abstract

The invention provides a method for trimming an array of carbon nanotubes. The method includes the steps of: providing an aligned carbon nanotubes array, providing a pulsed laser source, orienting the incident pulsed laser in a given direction, exposing an upper portion of carbon nanotubes array to radiation of the pulsed laser. The carbon nanotubes of the upper portion of the carbon nanotubes array are thus evaporated and shaped into a plurality of sharpening tips. The resultant carbon nanotubes array has a lower threshold of emission field, and enhanced field emission performance.

Description

200407261 五、發明說明(1) 【發明所屬之技術領域】 本發明係關於奈米材料之修整方法,特別係關於一維 奈米材料之形狀及方向之調整方法。 【先前技術】 奈米材料係一類具有特殊電學、磁學、光學、熱學、 力學或化學性質之新型材料,在介觀領域及奈米器件研製 方面有極其重要的應用前景。一維奈米材料於二維方向上 為奈米尺度’而長度方向上遠較該二維方向尺度大。 年,日本科學家I i j ima發現碳奈米管,請參見” Hel ical microtubules of graphitic carbon”, S Iijima,200407261 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for trimming nanomaterials, and particularly to a method for adjusting the shape and direction of one-dimensional nanomaterials. [Previous technology] Nanomaterials are a class of new materials with special electrical, magnetic, optical, thermal, mechanical, or chemical properties. They have extremely important application prospects in the field of mesoscopic and nanodevice development. The one-dimensional nanometer material has a nanometer scale in a two-dimensional direction and the length direction is much larger than the two-dimensional direction. In 1970, the Japanese scientist I i ima discovered carbon nanotubes, see "Helical microtubules of graphitic carbon", S Iijima,

Mature, vol· 354,p 56 (1991)。典型碳奈米管之直徑一 般為幾奈米至幾十奈米,長度一般為微米級”其潛在的應 用一直受到人們廣泛關注,尤其係在電子領域。 “ ^ 碳奈米管之導電性能極為優異,且其具有幾乎接近理 論極限之尖端表面積(尖端表面積愈小,其局部電場愈集 中)’故,碳奈米管係’已知最好的場發射材料,苴呈有極 :之,場發射電壓(小於1〇〇伏),可傳輸極大之電流密 ς j且電流極穩定,因而適合做場發射顯示器之發射山元 夺 目劫石反奈米管之生長方法,包括雷 ϊίΓ法及化學氣相沈積法等,所得之碳夺平 具有-定缺陷。如:粉體催 作為%發射材 易相互纏繞,直接 何枓均勻性杈至,發射點少,因 囚而發射電流密 第5頁 200407261 五、發明說明(2) 度難以提高,限制碳奈米管之場發射效率;化學氣相 法生成之碳奈米管陣列雖然垂直有序,高度—致,惟γ碳 奈米管之過高密度將引起碳奈米管之間強烈的電場 ^ 應,另,起催化作用之金屬顆粒亦可能殘留於碳奈米管^ 尖端,若不除去將影響電子發射。 請參閱第十圖,公開曰為2〇〇1年4月25曰之中國 公開jCNl 2 92354A號揭露一種碳奈米管開尖端以及淨化碳 奈米官之方法,先將碳奈米管112在基底11〇上垂直取向, 再調整支架146及雷射發射器144之位置,使得雷射搶142 於預定高度且平行基底110表面方向上對準碳奈米管Η?發 射雷射束140,從而截斷碳奈米管】12。惟,該方法需精^ 調整,射束140之發射點位置,對於高度不同待修整#之1 炭 奈f管而言,需分別調整,增加困難;且,截斷後的碳奈 米管間距極小,密度較大,碳奈米管之間存在強烈之電場 屏蔽效應’提高整體場發射之電場閾值。 其他一維奈米材料,如奈米線、奈米棒用作場發射材 料亦,面臨此類問題,因而,提供一種步驟簡單、易實現之 方法提高碳奈米管、奈米線、奈米棒等一維奈米材^之場 發射性能實為必要。 【内容】 本發明之目的在於提供一種調整一維奈米材料形狀和 方向,進而提咼其場發射性能的方法。 本發明之另一目的在於提供一種清潔一維奈米材料 列表面之方法。 200407261 五、發明說明(3) ----- 本發明提供一種調整一維奈米材料形狀和方向的方 = : = 提供一基板,其具有-平整表面;在 该基板表面上直接生長一維奈米材料陣列或者將一 材料陣列移植至該基板表面,其中該一維奈 '二/、 有平行基板表面之表面;提供一雷射♦ ? 車列八 、 4 w,杈识田射發射源;開啟雷射發 射源,务射雷射束照射上述一維奈米材料陣列之表面。 與先前,術相較,本發明提供之方法步驟簡單,易於 實現’可提高一維奈米材料之場發射性能。 、 【實施方式】 ,請參閱第一圖,係本發明方法具體用於調整碳奈米管 之形狀及方向之流程圖,包括下列步驟: 步驟1係提供一基板,該基板可以係玻璃、矽或金屬 基板,用以支撐碳奈米管; 步驟2係將碳奈米管置於該基板上,其中碳奈米管可 以採用化學氣相沈積法直接在玻璃、矽或金屬基板上生 長,或者係將製備好的碳奈米管陣列移植到該^板上; f步驟3係提供雷射束發射源,準備用於發射雷射束照 射礙奈米管陣列; 步驟4係調整雷射束發射源之發射角度,即調整雷射 束發射源相對於碳奈米管陣列基板之方向角度; 步驟5係開啟雷射束發射源發射雷射昭射碳夺米管陣 預疋之开> 狀為止’為防止過強的雷射束損壞破奈米管與基 板間之連接之穩固性,可調節雷射之強度與脈衝時間;·Mature, vol. 354, p 56 (1991). The diameter of a typical carbon nanotube is generally several nanometers to tens of nanometers, and the length is generally in the order of micrometers. "Its potential applications have been widely concerned, especially in the field of electronics." ^ Carbon nanotubes have extremely high electrical conductivity Excellent, and it has a tip surface area that is close to the theoretical limit (the smaller the tip surface area, the more concentrated the local electric field). Therefore, the carbon nanotube system is known as the best field emission material. Emission voltage (less than 100 volts), which can transmit extremely large current density, and the current is extremely stable, so it is suitable for the field emission display. The method of growing the dazzling stone anti-nano tube, including the thunder method and chemical gas With phase deposition and the like, the obtained carbon flattening has certain defects. For example, the powder reminder is easy to be intertwined as a% emitting material, so it is evenly distributed, the emission point is small, and the emission current is dense due to prison. Page 5 200407261 V. Description of the invention (2) It is difficult to increase the degree and limit carbon nanometer Field emission efficiency of the tube; although the carbon nanotube array generated by the chemical vapor phase method is vertically ordered and highly uniform, the excessively high density of the gamma carbon nanotube will cause a strong electric field between the carbon nanotubes. In addition, metal particles that play a catalytic role may also remain on the tips of carbon nanotubes. If not removed, it will affect electron emission. Please refer to the tenth figure. The Chinese publication No. jCNl 2 92354A, which was published on April 25, 2001, discloses a method for opening the carbon nanotubes and purifying the carbon nanotubes. The carbon nanotubes 112 are first placed in Oriented vertically on the substrate 110, and then adjust the positions of the bracket 146 and the laser emitter 144 so that the laser gun 142 is aligned with the carbon nanotube at a predetermined height and parallel to the surface of the substrate 110 to emit the laser beam 140, thereby Truncate carbon nanotube] 12. However, this method requires precise adjustment. The position of the emission point of the beam 140 needs to be adjusted separately for the carbon nanotubes of different heights to be trimmed. # 1 increases the difficulty; and the truncated carbon nanotube distance is extremely small. The density is large, and there is a strong electric field shielding effect between carbon nanotubes. 'Improve the electric field threshold of the overall field emission. Other one-dimensional nanomaterials, such as nanowires and nanorods, are also used as field emission materials. They also face such problems. Therefore, a simple and easy method is provided to improve the carbon nanotubes, nanowires, and nanometers. Field emission performance of one-dimensional nanomaterials such as rods is really necessary. [Content] The object of the present invention is to provide a method for adjusting the shape and direction of a one-dimensional nanomaterial, thereby improving its field emission performance. Another object of the present invention is to provide a method for cleaning the surface of one-dimensional nanomaterials. 200407261 V. Description of the invention (3) ----- The present invention provides a method for adjusting the shape and direction of a one-dimensional nanometer material =: = providing a substrate having a-flat surface; one-dimensional growth is directly grown on the substrate surface Nano material array or a material array transplanted to the surface of the substrate, wherein the one-dimensional nano-two /, a surface with parallel substrate surface; providing a laser Turn on the laser emission source, and make the laser beam illuminate the surface of the one-dimensional nanometer material array. Compared with the prior art, the method provided by the present invention has simple steps and is easy to implement, which can improve the field emission performance of one-dimensional nanomaterials. [Embodiment] Please refer to the first figure, which is a flowchart of the method of the present invention for adjusting the shape and direction of carbon nanotubes, including the following steps: Step 1 is to provide a substrate, which can be glass, silicon Or a metal substrate to support the carbon nanotube; step 2 is to place the carbon nanotube on the substrate, wherein the carbon nanotube can be grown directly on a glass, silicon or metal substrate by chemical vapor deposition, or The prepared carbon nano tube array is transplanted to the plate; f Step 3 is to provide a laser beam emission source, which is prepared to emit laser beam to illuminate the nano tube array; Step 4 is to adjust the laser beam emission The emission angle of the source is to adjust the orientation angle of the laser beam emission source relative to the carbon nanotube array substrate. Step 5 is to turn on the laser beam emission source to launch the laser projectile carbon gain meter array. So far, in order to prevent excessive laser beam from damaging the stability of the connection between the broken nano tube and the substrate, the intensity and pulse time of the laser can be adjusted;

五、發明說明(4) 步驟6係關閉雷射發射源。 請一併參閱第二圖、第三圖以及第四圖,係本發明方 法第一實施例用於調整碳奈米管陣列之形狀及方向之具體 過程。 首先,提供一基板10並在該基板10上直接生長碳夺 管陣T 2或通過移植方法將碳奈米管陣列i 2移植至基板1 〇 上::,基板材料可為玻璃、石夕或金屬及其氧化物,初 始Μ奈米管陣列如第二圖所示,該碳奈米管陣列Μ包含 有垂直於基板10之複數碳奈米管(未標示),該碳奈米 可通過化學氣相沈積法直接在基板10上生長,也可先製 好之後再移,到基板10上,通常製備得到的碳奈米管陣列 之表面有一薄層取向雜亂,直徑不均一且形態較差的碳夺 米管,薄層之厚度約為2微米或更薄,碳奈米管之頂部亦、 可能殘留有起催化作用之金屬顆粒;然後,利用雷射束14 垂直入射至碳奈米管陣列12表面,即雷射束14入射方向垂 直於基板表面。其中,雷射束14可為脈衝雷射,照射過程 應避f Ϊ在氧氣含量過高之氣氛中進行,因在純氧氣氛中碳 奈米官即使在室溫中也易被燒蝕,故,可選擇於室溫下, 氮氣、氫氣或含部分氧氣之氣體或多種混合氣體 環境氣氛中進行,另外,環境氣體壓力小於0· 2大氣壓時 難以形成尖端,所以,氣體壓力應大於〇· 2大氣壓,優選 為0 · 5,1 · 5大氣壓。本實施例採用空氣氣氛,空氣之壓力 為1大氣墨’於室溫中採用3〇8ηιη準分子雷射器發射脈衝雷 射束照射碳奈米管陣列丨2。其中,脈衝雷射束單個脈衝功 200407261 五、發明說明(5) 率為150mJ,照射面積為〇. 5cm2,照射20次脈衝。脈衝雷 射燒姓掉碳奈米管陣列丨2表面之薄層,可去除殘留之金屬 顆粒’並使碳奈米管頂端開口,同時由於表面往下數十微 米面度範圍内碳奈米管之間的氣體被加熱而瞬間膨脹,播 壓旁邊的碳奈米管,使其形成大小不等的針尖狀結構。如 第四圖所示’多次重複脈衝雷射照射後,碳奈米管陣列i 2 逐漸形成多個大小不等的錐形之尖端丨5,並且該尖端1 5之 方向係垂直朝上,即朝向雷射束丨4入射之方向。待形成預 定之尖端形狀以後,停止雷射照射。 為避免碳奈米管之間的氣體過度膨脹損害碳奈米管陣 列1 2與基板1 0間之結合強度,可調節脈衝雷射之強度、脈 衝時間及照射次數,採用強度較弱之雷射、多次照射可達 到與強雷射、較少照射次數相同之效果,但卻可保護碳奈 米管陣列1 2與基板1 〇間之結合牢固,不致發生脫落。 再請芩閱第四圖,本發明方法處理碳奈米管陣列雷射 照射後得到的尖端1 5,其由幾十至幾千根長度不等的碳奈 米管,集束而成’該尖端15高度與處理前的碳奈米管陣列高 度相較變化很小,經過雷射照射以後,尖端丨5之碳奈米管 頂部具有開口,有利於在較低的電場下形成有效發射,相 鄰尖端之間有一較大之間距,避免互相產生電場屏蔽效 應,從而改-善場發射效果。 第七圖、第八圖分別係本發明之第一實施例經雷射處 理前與處理後得到的破奈米管陣列之掃描電子顯微鏡 (SEM, Scanning Electron Microscope)圖,對比兩圖可5. Description of the invention (4) Step 6 is to turn off the laser emission source. Please refer to the second figure, the third figure, and the fourth figure together, which are specific processes for adjusting the shape and direction of the carbon nanotube array according to the first embodiment of the method of the present invention. First, a substrate 10 is provided and a carbon nanotube array T 2 is directly grown on the substrate 10 or a carbon nanotube array i 2 is transplanted onto the substrate 10 by a transplantation method: The substrate material may be glass, stone or Metal and its oxides. The initial M nanotube array is shown in the second figure. The carbon nanotube array M includes a plurality of carbon nanotubes (not labeled) perpendicular to the substrate 10. The carbon nanotubes can be chemically The vapor deposition method directly grows on the substrate 10, or it can be prepared and then moved to the substrate 10. Generally, the prepared carbon nanotube array has a thin layer of carbon on the surface with disordered orientation, uneven diameter, and poor shape. The thickness of the thin tube is about 2 microns or less. The top of the carbon nanotube may also have catalytic metal particles. Then, the laser beam 14 is incident perpendicularly to the carbon nanotube array 12 The surface, that is, the incident direction of the laser beam 14 is perpendicular to the substrate surface. Among them, the laser beam 14 may be a pulsed laser. The irradiation process should be avoided in an atmosphere with too high oxygen content. Since carbon nanotubes are easily ablated even at room temperature in a pure oxygen atmosphere, It can be selected to be carried out at room temperature under nitrogen, hydrogen or some oxygen-containing gas or mixed gas environment. In addition, it is difficult to form a tip when the ambient gas pressure is less than 0.2 atmosphere, so the gas pressure should be greater than 0.2 The atmospheric pressure is preferably 0. 5, 1 .5 atm. In this embodiment, an air atmosphere is used, and the pressure of the air is 1 atmosphere of ink. At room temperature, a carbon dioxide tube array is irradiated with a pulsed laser beam emitted by a 308 nm excimer laser. Among them, the single pulse work of a pulsed laser beam 200407261 V. Description of the invention (5) The rate is 150 mJ, the irradiation area is 0.5 cm2, and 20 pulses are irradiated. The pulsed laser burns off the thin layer on the surface of the carbon nanotube array, which can remove the remaining metal particles and open the top of the carbon nanotube. At the same time, the surface of the carbon nanotube is tens of microns down due to the surface. The gas between them is heated and instantly expands, sowing the carbon nanotubes next to it, forming a needle-like structure of varying sizes. As shown in the fourth figure, after repeated repeated pulsed laser irradiation, the carbon nanotube array i 2 gradually forms a plurality of tapered tips 5 of various sizes, and the direction of the tip 15 is vertically upward. That is, the direction in which the laser beam 4 is incident. After the predetermined tip shape is formed, the laser irradiation is stopped. In order to avoid the excessive expansion of the gas between the carbon nanotubes from damaging the bonding strength between the carbon nanotube array 12 and the substrate 10, the intensity of the pulsed laser, the pulse time and the number of irradiations can be adjusted, and a weaker laser is used. 3. Multiple irradiations can achieve the same effect as strong lasers and fewer irradiations, but it can protect the combination of the carbon nanotube array 12 and the substrate 10 firmly from falling off. Please refer to the fourth figure again. The method of the present invention treats the carbon nanotube tube array laser tip 15 obtained by laser irradiation, which is composed of tens to thousands of carbon nanotubes of varying lengths. The height of 15 is relatively small compared with the height of the carbon nanotube array before processing. After laser irradiation, the top of the carbon nanotube with a tip 5 has an opening at the top, which is conducive to the formation of effective emission under a lower electric field. There is a large distance between the tips to avoid mutual electric field shielding effects, thereby improving the -field emission effect. The seventh and eighth figures are the scanning electron microscope (SEM) images of the broken nanometer tube array obtained before and after the first embodiment of the present invention, respectively.

200407261 五、發明說明(6) 發現:處理後的碳奈米管陣呈 端下部呈圓柱形,頂部呈錐形:、:之針狀尖端,,乂 米,下部圓柱形直徑為〗〇料^ ^ 典型深度為3 0微 马1 〇试米’頂部錐形吉太 米。相鄰尖端之間具有明顯較大之間距。為 雷射圖’本發明方法之第二實施例用 驟之:f圖’其I準備碳奈米 同’不同之處在於,調i脈衝;身;::=第-實施例相 ίο右上方傾钭昭射二:二 疋角⑨’脈衝雷射從基板 u右上方預斜…、射石反奈米管陣列12表面 角度與碳奈米管陣列12之密 =:取大傾斜 越n = 體之壓力越大,則最大傾斜角度 X田射角大於取大傾斜角時,將難以形成+嫂。一 角度小於35度時容易形成有效發射:尖端, :大於35 f %形成類似波的起伏形狀。本實施例選㈣ ς ’經過照射20次脈衝,關閉脈衝雷射源, :狀’尖端t5組成的新碳奈米管陣列,該尖端15為傾= 二形,且该尖端1 5朝向脈衝雷射束丨4入射之方向,、即 ^奈米管陣列12傾斜3◦度。從針心之剖面圖看,= =斜’傾斜方向與雷射入射方向一致’另一邊保持垂直 第九圖係本發明第二實施例雷射照射處理以 ;奈米管陣列之圖,從第九圖可看出,碳奈米管陣列 义理後形成具有明顯間距之針狀尖端,且該尖端有一傾斜 第10頁 200407261 五、發明說明(Ό 度,傾斜之角度與雷射入射 形,頂部呈錐形,尖端之典 直徑1 0微米’頂部錐形直經 本發明方法可用於處理 線、奈米棒等一維奈米材料 射強度、脈衝知、射次數或環 綜上所述’本發明確已 提出專利申請。惟,以上所 例,自不能以此限制本案之 技藝之人士援依本發明之精 應涵蓋於以下申請專利範圍 角度一 梨深度 為幾十 嗖奈米 °針對 境氣氛 符合發 述者僅 申請專 神所作 内0 致,尖 為3 0微 奈米。 管,也 不同材 ,可達 明專利 為本發 利範圍 之等效 端之下部 米,下部 可用於處 料,調整 到同樣效 之要件, 明之較佳 。舉凡熟 修飾或變 呈圓柱 圓柱形 理奈米 脈衝雷 果。 遂依法 實施 悉本案 化,皆200407261 V. Description of the invention (6) It was found that the treated carbon nano tube array was cylindrical at the lower end and tapered at the top, and the needle-shaped tip of the tube was: 乂, the diameter of the lower cylindrical was 〖〇 ^ ^ Typical depth is 30 micrometers and 10 test meters' with a cone-shaped gigameter at the top. There is a significantly larger distance between adjacent tips. For the laser image of the second embodiment of the method of the present invention, the following steps are used: f image 'its I prepared carbon nanometers are the same as' the difference is that the i pulse is adjusted; body :: ==-embodiment phase ο upper right Inclined shot II: The two-cornered angle pulse pulse is pre-tilted from the upper right of the substrate u ..., the angle of the surface of the shooting anti-nano tube array 12 and the density of the carbon nanotube array 12 =: The larger the tilt, the more n = The greater the body pressure, the greater the tilt angle X field angle is greater than taking a large tilt angle, it will be difficult to form + 嫂. -When the angle is less than 35 degrees, it is easy to form an effective emission: the tip, greater than 35 f% forms a wave-like undulating shape. In this embodiment, a new carbon nanotube array consisting of a tip t5 is turned off after 20 pulses are irradiated. The tip 15 is inclined = two-shaped, and the tip 15 faces the pulsed laser. The direction in which the beam 4 enters, that is, the nano tube array 12 is tilted by 3 °. Seen from the cross-sectional view of the needle center, == obliquely, the oblique direction is consistent with the laser incident direction. The other side is kept vertical. The ninth figure is a laser irradiation treatment of the second embodiment of the present invention; It can be seen in the figure that the carbon nanotube array formed a needle-shaped tip with a clear pitch after the rationale, and the tip has a tilt. Page 10 200407261 V. Description of the invention (Ό, the angle of the tilt and the shape of the laser incident, the top shows Conical, tip diameter of 10 microns' top cone straight through the method of the present invention can be used to process line, nano-rods and other one-dimensional nanomaterials such as shot intensity, pulse, number of shots, or the ring described in the present invention A patent application has been filed. However, the above examples, since those who cannot limit the skills of this case, rely on the essence of the present invention should be covered by the following patent scope of application. The depth of a pear is tens of nanometers. The author only applies to the inner god ’s work, the tip is 30 micron. The tube, but also different materials, can reach the bottom of the equivalent end of the patent of this invention, and the lower part can be used for processing and adjustment. The same effect elements, Ming preferred. Whether it cooked modified or variant has a cylindrical cylindrical lightning pulse fruit processing nm. Then note the case of the embodiment according to the law, are

第11頁 200407261 圖式簡單說明 【圖式簡單說明】 第一圖係本發明方法用於調整碳奈米管 流程圖。 g t狀及方向之 第二圖係本發明方法第一實 狀及方向初始時碳奈米管陣列之示意=调整碳奈米管形 第三圖係本發明方法第一實施:丨田认▲ 狀及方向過程中雷射束照射碳奈米管陣列:整二奈米管形 第四圖係本發明方法第—實施例用於調二$ 狀及方向過程中照射後得到的碳夺f營 ^"反不米s形 意圖。 厌不水s陣列形狀之剖面示 第五圖係本發明方法第二實施例用 管陣列之示意圖。 雷射束照射碳奈米Page 11 200407261 Brief description of the drawings [Simplified description of the drawings] The first diagram is a flow chart of the method of the present invention for adjusting a carbon nanotube. The second diagram of the gt shape and direction is the schematic diagram of the first solid shape and the initial direction of the carbon nanotube array in the method of the present invention. The carbon nanotube array is irradiated with the laser beam during the orientation and direction: the whole second nano tube shape is shown in the fourth diagram of the method of the present invention, which is used to adjust the shape and orientation of the carbon nanotubes obtained after irradiation. " Anti-s-shaped intent. Sectional view of the shape of the water-repellent s array. The fifth figure is a schematic view of a tube array used in the second embodiment of the method of the present invention. Laser beam irradiates carbon nanometers

弟六圖係本發明方法第二實施例雷射束照射後得到的 兔奈米管陣列形狀之剖面示意圖。 第七圖係本發明方法第一實施例之未經雷射照射之碳 奈米管陣列之SEM圖。 “,第八圖係本發明方法第一實施例經雷射照射後的碳奈 米管陣列之SEM圖。Figure 6 is a schematic cross-sectional view of the shape of a rabbit nanotube array obtained after laser beam irradiation according to the second embodiment of the method of the present invention. The seventh figure is a SEM image of a carbon nanotube array without laser irradiation in the first embodiment of the method of the present invention. "The eighth figure is an SEM image of a carbon nanotube array after laser irradiation in the first embodiment of the method of the present invention.

第九圖係本發明方法第二實施例經雷射照射後的碳奈 米管陣列之SEM圖。 第十5l·係現有技術碳奈米管載斷方法之示意圖。 【主要元件符號說明】 基板 10 雷射束 14 石炭奈米管陣列 12 尖端 15The ninth figure is a SEM image of a carbon nanotube array after laser irradiation in the second embodiment of the method of the present invention. The tenth 5l is a schematic diagram of the prior art carbon nano tube load breaking method. [Description of main component symbols] Substrate 10 Laser beam 14 Carbon nanotube array 12 Tip 15

第12頁Page 12

Claims (1)

200407261 1 ·種凋整一維奈米材料方向及形狀之方法,其包括步 驟: 提供 在該 維奈米 料陣列 提供 開啟 陣列之 2·如申請 形狀之 面。 3·如申請 形狀之 4·如申請 形狀之 5·如申請 形狀之 奈米纖 6.如申請 形狀之 陣列的 7·如申請 形狀之 一基板 ’其具有一平整表面; 面上直接生長一維奈米材料陣列或者將一 列移植至该基板表面,其中該一維奈米材 具有平行基板表面之表面; 一雷射發射源; 射源’發射雷射束照射上述一維奈米材料 基板表 材料陣 雷射發 表面。 專利範 方法, 專利範 方法, 專利範 方法, 專利範 方法, 維材料 專利範 方法, 表面。 專利範 方法, 圍第1項所述之調整一維奈米材料方向及 其中一維奈米材料陣列垂直於該基板表 圍第1項所述之調整一維奈米材料方向及 其中該雷射束係脈衝雷射。 。 圍第1項所述之調整一維奈米材料方向及 其中該一維奈米材料係碳奈米管。口 圍第1項所述之調整一維奈米材料方 其中該一維奈米材料係奈米線、太;* ^^米棒或 〇 圍第1項所述之調整一維奈米材料 其中該雷射束垂直入射到該一 % 向及 、准奈米材料 圍第1項所述之調整_維奈米 柯料 到該一 方向及 维奈 米材料200407261 1. A method for trimming the direction and shape of a one-dimensional nanometer material, which includes the steps of: providing on the one-dimensional nanometer material array; providing an opening of the array; 3. As in the applied shape 4. As in the applied shape 5. As in the applied shape nano fiber 6. As in the applied shape array 7. As in the applied shape one of the substrates' has a flat surface; one-dimensional growth directly on the surface A nano material array or a row is transplanted to the surface of the substrate, wherein the one-dimensional nano material has a surface parallel to the surface of the substrate; a laser emission source; a source 'emits a laser beam to irradiate the above-mentioned one-dimensional nano material substrate surface material Bursts of laser radiation on the surface. Patent Fan Method, Patent Fan Method, Patent Fan Method, Patent Fan Method, Patent Material Fan Method, Surface. The patented method includes adjusting the direction of the one-dimensional nanomaterial and the array of one-dimensional nanomaterial described in item 1 perpendicular to the substrate, and adjusting the direction of the one-dimensional nanomaterial described in item 1 and the laser. Beam system pulsed laser. . Adjust the direction of the one-dimensional nanomaterial described in item 1 and wherein the one-dimensional nanomaterial is a carbon nanotube. The adjusted one-dimensional nanometer material described in item 1 of the mouth circle, wherein the one-dimensional nanometer material is nanowire, too; * ^^ rice rod or the adjusted one-dimensional nanometer material described in item 1 The laser beam was incident perpendicularly to the one-way and quasi-nano material. The adjustment described in item 1. 第13頁 200407261 六、申請專利範圍 陣列之表面。 8. 如申請專利範圍第7項所述之調整一維奈米材料方向及 形狀之方法,其中該雷射束與一維奈米材料陣列縱向形 成0度至35度夾角。 9. 如申請專利範圍第1項所述之調整一維奈米材料方向及 形狀之方法,其中該方法係在空氣、氮氣、氫氣、含部 分氧氣的氣體之一種或多種混合氣體中進行。 1 0.如申請專利範圍第9項所述之調整一維奈米材料方向及 形狀之方法,其中該氣體形成的氣壓為(K 2至2大氣壓。 11.如申請專利範圍第1 0項所述之調整一維奈米材料方向 及形狀之方法,其中該氣體形成之氣壓為0.5至1.5大 氣壓範圍内。 1 2.如申請專利範圍第1 1項所述之調整一維奈米材料方向 及形狀之方法,其中該氣壓為1大氣壓。 1 3. —種調整一維奈米材料方向及形狀之方法,其包括步 驟: ,提供一維奈米材料陣列,其具有一表面; 提供一雷射發射源; 調整雷射發射源之發射角度; 開啟雷射發射源,發射雷射束照射該一維奈米材料陣 列之表面-。 1 4.如申請專利範圍第1 3項所述之調整一維奈米材料方向 及形狀之方法,其中該雷射束係脈衝雷射。 1 5.如申請專利範圍第1 3項所述之調整一維奈米材料方向Page 13 200407261 6. Scope of patent application The surface of the array. 8. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described in item 7 of the scope of the patent application, wherein the laser beam and the one-dimensional nanomaterial array form an angle of 0 ° to 35 ° in the longitudinal direction. 9. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described in item 1 of the scope of the patent application, wherein the method is performed in one or more mixed gases of air, nitrogen, hydrogen, and a gas containing a portion of oxygen. 10. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described in item 9 of the scope of the patent application, wherein the pressure formed by the gas is (K 2 to 2 atm. 11. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described above, wherein the pressure formed by the gas is in the range of 0.5 to 1.5 atm. 1 2. The direction of one-dimensional nanomaterial is adjusted as described in item 11 of the scope of patent application and A method of shape, wherein the air pressure is 1 atmosphere. 1 3. A method of adjusting the direction and shape of a one-dimensional nano material, comprising the steps of: providing a one-dimensional nano material array having a surface; providing a laser Adjust the emission angle of the laser emission source. Turn on the laser emission source and emit the laser beam to illuminate the surface of the one-dimensional nanometer material array. 1 4. Adjust as described in item 13 of the scope of patent application. A method for the direction and shape of a material of nanometer, wherein the laser beam is a pulsed laser. 1 5. Adjust the direction of a material of nanometer as described in item 13 of the scope of patent application. 第14頁 200407261 六、申請專利範圍 及形狀之方法,其中該一維奈米材料係碳奈米管、奈米 線、奈米棒或奈米纖維材料。 1 6.如申請專利範圍第1 3項所述之調整一維奈米材料方向 及形狀之方法,其中該雷射發射源之發射角度為大於0 度小於35度夾角。 1 7.如申請專利範圍第1 3項所述之調整一維奈米材料方向 及形狀之方法,其中該方法係在空氣、氮氣、氫氣、含 部分氧氣的氣體之一種或多種混合氣體中進行。Page 14 200407261 6. Method of applying for patent scope and shape, wherein the one-dimensional nano material is carbon nano tube, nano wire, nano rod or nano fiber material. 16. The method for adjusting the direction and shape of a one-dimensional nano material as described in item 13 of the scope of the patent application, wherein the emission angle of the laser emission source is greater than 0 degrees and less than 35 degrees. 1 7. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described in item 13 of the scope of the patent application, wherein the method is performed in one or more mixed gases of air, nitrogen, hydrogen, and a gas containing some oxygen . 1 8.如申請專利範圍第1 7項所述之調整一維奈米材料方向 及形狀之方法,其中該氣體形成之氣壓為0.2至2大氣 壓。 1 9.如申請專利範圍第1 8項所述之調整一維奈米材料方向 及形狀之方法,其中該氣體形成之氣壓為0. 5至1. 5大氣 壓範圍内。 2 0.如申請專利範圍第1 9項所述之調整一維奈米材料方向 及形狀之方法,其中該氣壓為1大氣壓。1 8. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described in item 17 of the scope of the patent application, wherein the gas pressure is 0.2 to 2 atmospheres. 19. The method for adjusting the direction and shape of a one-dimensional nano material as described in item 18 of the scope of the patent application, wherein the gas pressure is within the range of 0.5 to 1.5 atmospheric pressure. 20. The method for adjusting the direction and shape of a one-dimensional nanomaterial as described in item 19 of the scope of patent application, wherein the air pressure is 1 atmosphere. 第15頁Page 15
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