TWI246162B - A carbon nanotubes field emission device - Google Patents
A carbon nanotubes field emission device Download PDFInfo
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- TWI246162B TWI246162B TW91135118A TW91135118A TWI246162B TW I246162 B TWI246162 B TW I246162B TW 91135118 A TW91135118 A TW 91135118A TW 91135118 A TW91135118 A TW 91135118A TW I246162 B TWI246162 B TW I246162B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 43
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 43
- 229910021392 nanocarbon Inorganic materials 0.000 claims description 72
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 17
- 230000005684 electric field Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 102000029749 Microtubule Human genes 0.000 description 1
- 108091022875 Microtubule Proteins 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 210000004688 microtubule Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002054 transplantation Methods 0.000 description 1
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- Cold Cathode And The Manufacture (AREA)
Abstract
Description
1246162 修正 五、發明說明（I) 【發明所屬之技術領域】 =發明係關於一種場發射裝置，特別係關於一 米碳管發射電子之場發射裝置。 用不 【先前技術] ，奈米材料係一類具有特殊電學、磁學、光學、熱學、 力學或化學性質之新型材料，在介觀領域及奈米器件研製 方面有極其重要的應用前景。1991年，日本科學家Iijima 發現奈米碳管，請參見"Helical microtubules 〇f graphitic carbon ， S Iijima， Nature， vol.354p56 (1991)。典型奈米碳管之直徑一般為幾奈米至幾十奈米， 長度一般為微米級，其潛在的應用一直受到人們廣泛關 注，尤其係在電子領域。 Ρ 奈米碳管之導電性能極為優異，且其具有幾 論極限之尖端表面積，由於尖端表面積愈小，其俨1246162 Amendment V. Description of the invention (I) [Technical field to which the invention belongs] = The invention relates to a field emission device, particularly to a field emission device that emits electrons by a one-meter carbon tube. Without [previous technology], nanomaterials are a class of new materials with special electrical, magnetic, optical, thermal, mechanical, or chemical properties. They have extremely important application prospects in the field of mesoscopic and nanodevice development. In 1991, Japanese scientist Iijima discovered nano carbon tubes, see " Helical microtubules 〇f graphitic carbon, S Iijima, Nature, vol. 354p56 (1991). The diameter of a typical nano carbon tube is generally several nanometers to several tens of nanometers, and the length is generally in the order of micrometers. Its potential applications have been widely concerned by people, especially in the field of electronics. P nanometer carbon tubes have extremely good electrical conductivity, and have a tip surface area of several theoretical limits.
Li:J射奈米碳管係已知最好的場發射材#，： ： ί 極低之场發射電壓（小於1〇〇伏），可 γ有 度，且電流極穩定m #八从β 于利j位人之電流铪 %、又，因叫迥5做％發射顯示器之發射元 方Li: J is the best known field emission material for nanometer carbon tube #: :: Very low field emission voltage (less than 100 volts), can have γ degree, and the current is extremely stable m # 八 从 β The electric current of Yu Li j people is 、%, and because it is called 5%, it is the emission element of the emission display.
/^Tfc 田 作 之 接 密 積 奈 有序，高度/ ^ Tfc Tian Zuo's close product is ordered and highly
第5頁 巳枯電弧放電法、 所知之奈米碳管直接用 ^粉體催化劑生長而得 序，且易相互纏繞，直 射點少，因而發射電流 發射效率；化學氣相沈 1246162 _案號 91135118_年月日__ 五、發明說明（2) 米碳管之過高密度將引起奈米碳管之間強烈的電場屏蔽效 應，另，起催化作用之金屬顆粒亦可能殘留於奈米碳管之 尖端，若不除去將影響電子發射。Page 5 巳 Arc discharge method, known carbon nanotubes can be grown directly using ^ powder catalysts, and they are easily entangled with each other, and there are few direct points, so the emission current emission efficiency; chemical vapor deposition 1246162 _ case number 91135118_ 年月 日 __ V. Description of the invention (2) The excessively high density of rice carbon tubes will cause a strong electric field shielding effect between the carbon nanotubes. In addition, metal particles that play a catalytic role may also remain in the carbon nanotubes. The tip of the tube, if not removed, will affect electron emission.
請參閱第十圖，公開曰為2 〇 〇 1年4月2 5曰之中國專利 公開第CN 1 2 9 2 3 5 4 A號揭露一種奈米碳管開尖端以及淨化奈 米碳管之方法，先將奈米碳管1 1 2在基底1 1 0上垂直取向， 再調整支架146及雷射發射器144之位置，使得雷射搶142 於預定高度且平行基底110表面方向上對準奈米碳管112發 射雷射束1 4 0，從而截斷奈米碳管1 1 2。惟，該方法需精確 調整雷射束1 4 0之發射點位置，對於高度不同待修整之奈 米碳管而言，需分別調整，增加困難；且，截斷後的奈米 碳管間距極小，密度較大，奈米碳管之間存在強烈之電場 屏蔽效應，提高整體場發射之電場閾值。 因此，提供一種降低場發射電場閾值之場發射裝置實 為必要。 【内容】 本發明之目的係提供一種可消除電場屏蔽效應、提高 場發射性能之奈米碳管場發射裝置。Please refer to the tenth figure. Chinese Patent Publication No. CN 1 2 9 2 3 5 4 A published on April 25, 2001 discloses a method for opening a carbon nanotube and a method for purifying the carbon nanotube. First, the nano carbon tube 1 1 2 is vertically oriented on the substrate 1 10, and then the positions of the bracket 146 and the laser emitter 144 are adjusted so that the laser grab 142 is aligned at a predetermined height and parallel to the surface of the substrate 110. The rice carbon tube 112 emits a laser beam 1 40, thereby cutting off the nano carbon tube 1 12. However, this method needs to accurately adjust the position of the emission point of the laser beam 140. For the carbon nanotubes of different heights to be trimmed, it needs to be adjusted separately, which increases the difficulty; and the nano carbon tube spacing after truncation is extremely small. The density is large, and there is a strong electric field shielding effect between the carbon nanotubes, which increases the electric field threshold of the overall field emission. Therefore, it is necessary to provide a field emission device that reduces the threshold of the field emission electric field. [Content] The object of the present invention is to provide a nano-carbon tube field emission device which can eliminate the electric field shielding effect and improve the field emission performance.
本發明提供一種奈米碳管場發射裝置，其包括奈米碳 管陣列，以及與該奈米碳管陣列連成一體的由奈米碳管束 形成之複數尖端，所述尖端與奈米碳管陣列相連接的部分 呈圓柱形，遠離奈米碳管陣列的部分呈錐形，並且相鄰尖 端具有一預定間距。 與先前技術相較，本發明之奈米碳管場發射裝置由於 其發射電子之奈米碳管尖端極小，且其具有一預定間距，The invention provides a nano carbon tube field emission device, which includes a nano carbon tube array and a plurality of tips formed by a nano carbon tube bundle integrated with the nano carbon tube array, the tip and the nano carbon tube array. The connected parts are cylindrical, the parts far from the nano carbon tube array are tapered, and adjacent tips have a predetermined distance. Compared with the prior art, the nano-carbon tube field emission device of the present invention has a small tip of the nano-carbon tube emitting electrons, and it has a predetermined distance.
第6頁 1246162 ____案號91135118___年月 i 修正 五、發明說明（3) 從而減少甚至消除電場屏蔽效應’降低場發射電場閾值， 提高場發射效率。 【實施方式】 μ參閱第一圖，係本發明奈米碳管場發射裝置之製造 方法流程圖，包括下列步驟： 步驟1係提供一基板，該基板可以係玻璃、矽或金屬 基板，用以支撐奈米碳管； 步驟2係將奈米碳管置於該基板上，其中奈米碳管可 以採用化學氣相沈積法直接在玻璃、矽或金屬基板上生 長，或者係將製備好的奈米碳管陣列移植到該基板上； 步驟3係提供雷射束發射源，準備用於發射雷射束照 射奈米碳管陣列； 步驟4係調整雷射束發射源之發射角度，即調整雷射 束發射源相對於奈米碳管陣列基板之方向角度； 列夕：驟5 ^、開啟雷射束發射源發射雷射照射奈米碳管陣 預^ : ί複照•’直至奈米碳管陣列之形狀被調整到 板5之：=為止’ *防止過強的雷射束損壞奈米碳管與基 ί ί 穩固,性，可調節雷射之強度與脈衝時間； ^ ‘6係關閉雷射發射源。 請一併參閱第二 法第一實施例用於調 過程。 圖、第三圖以及第四圖，係本發明方 整奈米碳管陣列之形狀及方向之具體 營陳供—基板1Q並在該基板1Q上直接生長奈米礙 g陣列1 2或通過移植方、本脸士 工’其中，基板材料可為被^Page 6 1246162 ____ Case No. 91135118___ Month i Amendment V. Description of the Invention (3) To reduce or even eliminate the shielding effect of the electric field ′ Reduce the threshold of the field emission electric field and improve the field emission efficiency. [Embodiment] Referring to the first figure, it is a flowchart of a method for manufacturing a nano-carbon tube field emission device according to the present invention, including the following steps: Step 1 is to provide a substrate, which may be a glass, silicon or metal substrate, for Support carbon nanotubes; Step 2 is to place the carbon nanotubes on the substrate, where the carbon nanotubes can be grown directly on glass, silicon or metal substrates by chemical vapor deposition, or the prepared carbon nanotubes Rice carbon tube array is transplanted to the substrate; Step 3 is to provide a laser beam emission source, ready to be used to emit a laser beam to illuminate the carbon nanotube array; Step 4 is to adjust the emission angle of the laser beam emission source, that is, adjust the laser Orientation angle of the beam emission source with respect to the substrate of the carbon nanotube array; Lie Xi: Step 5 ^, turn on the laser beam emission source to emit laser radiation to illuminate the nano carbon tube array ^: 复 duplicate photo • 'until the nano carbon The shape of the tube array is adjusted to that of the plate 5: = so far '* To prevent excessive laser beams from damaging the nano carbon tube and the base ί 性 Stability, adjustable laser intensity and pulse time; ^' 6 series closed Laser emission source. Please also refer to the first embodiment of the second method for the tuning process. Figures, 3, and 4 are specific examples of the shape and orientation of the square carbon nanotube array of the present invention—the substrate 1Q and the nanometer G array 12 is grown directly on the substrate 1Q or through transplantation. Fang, Ben face workers' Among them, the substrate material can be bedding ^
上，甘士 ^ 万去將奈米碳管陣列1 2移植至基板1 〇 r—-——_缡、矽或金屬及其氧化物，初 1246162 案號 91135118 年 月 修正 五、發明說明（4) 始時奈米碳管陣列如第二圖所示，該奈米碳管陣列1 2包含 有垂直於基板1 0之複數奈米碳管（未標示），通常製備得 到的奈米碳管陣列之表面有一薄層取向雜亂，直徑不一且 形態較差的奈米碳管，薄層之厚度約為2微米或更薄，奈 米碳管之頂部亦可能殘留有起催化作用之金屬顆粒；然 後，利用雷射束1 4垂直入射至奈米碳管陣列1 2表面，即雷 射束1 4入射方向垂直於基板表面。其中，雷射束1 4可為脈 衝雷射，照射過程應避免在氧氣含量過高之氣氛中進行， 因在純氧氣氛中奈米碳管即使在室溫中也易被燒蝕，故， 可選擇於室溫下，在空氣、氮氣、氫氣或含部分氧氣之氣 體或多種混合氣體環境氣氛中進行，另外，環境氣體壓力 小於0. 2大氣壓時難以形成尖端，所以，氣體壓力應大於 0. 2大氣壓，優選為0. 5至1. 5大氣壓。本實施例採用空氣 氣氛，空氣之壓力為1大氣壓，於室溫中採用308 nm準分子 雷射器發射脈衝雷射束照射奈米碳管陣列1 2。其中，脈衝 雷射束單個脈衝功率為1 5 0 m J，照射面積為0 . 5 c m 2， 照射 2 0次脈衝。脈衝雷射燒钱掉奈米碳管陣列1 2表面之薄層， 可去除殘留之金屬顆粒，並使奈米碳管頂端開口，同時由 於表面往下數十微米高度範圍内奈米碳管之間的氣體被加 熱而瞬間膨脹，擠壓旁邊的奈米碳管，使其形成大小不等 的針尖狀結構。如第四圖所示，多次重複脈衝雷射照射 後，奈米碳管陣列1 2逐漸形成多個大小不等的錐形之尖端 1 5，並且該尖端1 5之方向係垂直朝上，即朝向雷射束1 4入 射之方向。待形成預定之尖端形狀以後，停止雷射照射。 為避免奈米碳管之間的氣體過度膨脹損害奈米碳管陣In the above, Gan Shi ^ Wanqian transplanted the nano carbon tube array 12 to the substrate 1 〇r —————_ 或, silicon or metal and its oxide, the first 1246162 case No. 91135118 Amended the fifth, the description of the invention (4 ) Initially, the carbon nanotube array is shown in the second figure. The carbon nanotube array 12 includes a plurality of carbon nanotubes (not labeled) perpendicular to the substrate 10. The carbon nanotube array is usually prepared. On the surface, there is a thin layer of carbon nanotubes with disordered orientation, different diameters and poor shapes. The thickness of the thin layer is about 2 microns or less. The top of the carbon nanotubes may also have catalytic metal particles; The laser beam 14 is incident on the surface of the carbon nanotube array 12 vertically, that is, the incident direction of the laser beam 14 is perpendicular to the surface of the substrate. Among them, the laser beam 14 can be a pulsed laser, and the irradiation process should be avoided in an atmosphere with an excessively high oxygen content. The nano carbon tube is easily ablated even at room temperature in a pure oxygen atmosphere. It can be selected to be performed at room temperature in the air, nitrogen, hydrogen or gas containing some oxygen or mixed gas environment. In addition, it is difficult to form a tip when the atmospheric pressure is less than 0.2 atmosphere, so the gas pressure should be greater than 0. 2 atmospheric pressure, preferably from 0.5 to 1.5 atmospheric pressure. In this embodiment, an air atmosphere is used, and the pressure of the air is 1 atm. A 308 nm excimer laser is used to emit a pulsed laser beam to illuminate the carbon nanotube array 12 at room temperature. Among them, the pulse laser beam has a single pulse power of 150 m J, an irradiation area of 0.5 c m 2, and 20 pulses of irradiation. The pulse laser burns away the thin layer on the surface of the carbon nanotube array 12, which can remove the remaining metal particles and open the top of the carbon nanotube. The gas is heated and instantly expands, squeezing the adjacent carbon nanotubes to form needle-shaped structures of varying sizes. As shown in the fourth figure, after repeated pulsed laser irradiation multiple times, the carbon nanotube array 12 gradually forms a plurality of tapered tips 15 of various sizes, and the direction of the tips 15 is vertically upward. That is, the direction in which the laser beam 14 is incident. After the predetermined tip shape is formed, the laser irradiation is stopped. In order to avoid the excessive expansion of gas between the carbon nanotubes, the carbon nanotube array is damaged.
1246162 案號 91135118 年 月 修正 五、發明說明（5) 歹|J 1 2與基板1 0間之結合強度，可調節脈衝雷射之強度、脈 衝時間及照射次數，採用強度較弱之雷射、多次照射可達 到與強雷射、較少照射次數相同之效果，但卻可保護奈米 碳管陣列1 2與基板1 0間之結合牢固，不致發生脫落。 再請參見第四圖，本發明方法處理奈米碳管陣列得到 的複數奈米碳管形成的尖端15，其由幾十至幾千根長度不 等之奈米碳管集束形成，該尖端1 5高度與未處理前之奈米 碳管陣列高度相較變化很小，經過雷射照射以後，尖端1 5 頂部奈米碳管具有開口，有利於在較低之電場下形成有效 發射，相鄰針尖之間有一預定間距，避免互相產生電場屏 蔽效應，從而改善場發射效果。其中預定間距可消除或降 低相鄰尖端之間的電場屏敝效應。 第七圖及第八圖分別係本發明第一實施例雷射處理前 和處理後得到的奈米碳管陣列之S E Μ圖，對比兩圖可發 現：處理後所得到的奈米碳管場發射元件，其包括奈米碳 管陣列以及與該奈米碳管陣列連接一體且具有明顯針狀尖 端之奈米碳管束尖端，可用於發射電子，每個奈米碳管束 尖端與奈米碳管陣列相連接之部分呈圓柱形，直徑為1 - 3 0 微米；遠離奈米碳管陣列之部分呈錐形，其中錐形之尖部 直徑為1 0 - 1 0 0奈米。典型尖端之深度為3 0微米，相鄰尖端 之間具有明顯間距，為1微米至3 0微米。 請參見第五圖及第六圖，本發明第二實施例用雷射光 束照射奈米碳管陣列之示意圖，其中，準備奈米碳管陣列 1 2 ’的步驟、環境氣氛、雷射參數均與第一實施例相同， 不同之處在於，調整脈衝雷射發射角，使脈衝雷射光束1246162 Case No. 91135118 Amendment V. Description of the invention (5) The bonding strength between 歹 | J 1 2 and the substrate 10 can adjust the intensity, pulse time and number of irradiations of the pulsed laser, using a weaker laser, Multiple irradiations can achieve the same effect as strong lasers and fewer irradiations, but it can protect the bond between the nano carbon tube array 12 and the substrate 10 firmly and not fall off. Please refer to FIG. 4 again. The tip 15 formed by a plurality of nano carbon tubes obtained by processing the nano carbon tube array by the method of the present invention is formed by a bundle of tens to thousands of nano carbon tubes of varying length. The tip 1 The height of the 5 carbon nanotubes is very small compared to the height of the untreated carbon nanotube array. After laser irradiation, the carbon nanotubes at the top of the tip 1 5 have openings, which helps to form an effective emission under a lower electric field. There is a predetermined distance between the needle tips to avoid mutual electric field shielding effects, thereby improving the field emission effect. The predetermined distance can eliminate or reduce the electric field shielding effect between adjacent tips. The seventh and eighth figures are the SEM diagrams of the nano-carbon tube array obtained before and after the laser treatment in the first embodiment of the present invention. Comparing the two pictures, it can be found that the nano-carbon tube field obtained after the treatment is: The emitting element includes a nano carbon tube array and a nano carbon tube bundle tip connected with the nano carbon tube array and having a clear needle-like tip, which can be used to emit electrons. The tip of each nano carbon tube bundle and the nano carbon tube The connected part of the array is cylindrical with a diameter of 1-30 microns; the part far from the nano-carbon tube array is tapered, where the diameter of the tapered tip is 10-100 nm. A typical tip has a depth of 30 microns and there is a significant spacing between adjacent tips, ranging from 1 to 30 microns. Please refer to FIG. 5 and FIG. 6, which are schematic diagrams of irradiating a carbon nanotube array with a laser beam according to a second embodiment of the present invention. The steps of preparing the carbon nanotube array 12 2 ′, the ambient atmosphere, and the laser parameters are all shown. Same as the first embodiment, except that the pulse laser emission angle is adjusted to make the pulse laser beam
第9頁 1246162 _案號91135118_年月日__ 五、發明說明（6) 1 4 ’相對奈米碳管陣列1 2 ’傾斜一定角度，脈衝雷射從基板 1 0 ’右上方傾斜照射奈米碳管陣列1 2 ’ 。其中，最大傾斜角 度與奈米碳管陣列之密度以及氣體壓力有關，奈米碳管陣 列密度越高，氣體壓力越大，最大傾斜角度越大，當入射 角大於最大傾斜角時，將難以形成尖端。一般而言，傾斜 的角度大於0度且小於35度時容易形成有效尖端，當大於 3 5度時形成類似波的起伏形狀，本實施例選用3 0度。經過 照射2 0次脈衝，關閉脈衝雷射源，得到包括奈米碳管陣列 1 2 ’及連接其上的傾斜的針狀尖端1 5 ’的奈米碳管發射元 件，該尖端1 5 ’為傾斜的圓錐形，並且，該尖端1 5 ’朝向脈 衝雷射光束1 4 ’射來的方向，即相對奈米碳管陣列1 2 ’傾斜 3 0度。從針尖1 5 ’的豎截面來看，有一邊傾斜，傾斜方向 與雷射入射方向一致，另一邊保持豎直不變。並且，相鄰 尖端1 5 ’之間具有預定的間距，可消除或降低電場屏蔽效 應。 第九圖係本發明第二實施例雷射照射處理以後得到的 奈米碳管場發射元件之SEM圖，從第九圖可以看出，處理 後得到的奈米碳管場發射元件，其包括奈米碳管陣列以及 與該奈米碳管陣列連接一體且具有明顯針狀尖端之奈米碳 管束尖端，可用於發射電子，且該尖端有一傾斜度，傾斜 角度與雷射入射之角度一致，每個奈米碳管束尖端與奈米 碳管陣列相連接之部分呈圓柱形，直徑為1 - 3 0微米；遠離 奈米碳管陣列之部分呈錐形，其中錐形的尖部直徑為1 0 -1 0 0奈米。典型尖端之深度為3 0微米，相鄰尖端之間具有 明顯間距，為1微米至3 0微米。Page 91246162 _Case No. 91135118_Year Month Date__ V. Description of the invention (6) 1 4 'Relted to a certain angle with respect to the carbon nanotube array 1 2', the pulse laser is irradiated from the substrate 1 0 ' Meter carbon tube array 12 '. Among them, the maximum tilt angle is related to the density of the carbon nanotube array and the gas pressure. The higher the density of the carbon nanotube array, the higher the gas pressure, and the larger the maximum tilt angle. When the incident angle is greater than the maximum tilt angle, it will be difficult to form. Tip. Generally speaking, when the angle of inclination is greater than 0 degrees and less than 35 degrees, it is easy to form an effective tip, and when it is greater than 35 degrees, a wave-like undulating shape is formed. In this embodiment, 30 degrees is selected. After irradiating 20 pulses, the pulse laser source was turned off to obtain a nanometer carbon tube emitting element including a nanometer carbon tube array 12 'and an inclined needle-like tip 15' connected thereto. The tip 15 'is The inclined conical shape, and the tip 15 ′ is inclined toward the direction in which the pulsed laser beam 14 ′ is emitted, that is, it is inclined 30 degrees with respect to the nano-carbon tube array 1 2 ′. From the vertical section of the needle tip 15 ', one side is inclined, and the direction of inclination is consistent with the laser incident direction, and the other side remains vertical. In addition, a predetermined distance between adjacent tips 15 'can eliminate or reduce the effect of electric field shielding. The ninth figure is an SEM image of the nano-carbon tube field emission element obtained after the laser irradiation treatment of the second embodiment of the present invention. As can be seen from the ninth figure, the nano-carbon tube field emission element obtained after the process includes The nano carbon tube array and the nano carbon tube bundle tip connected with the nano carbon tube array and having a clear needle-like tip can be used to emit electrons, and the tip has an inclination, and the inclination angle is consistent with the angle of laser incident, The part of each nano carbon tube bundle connected to the nano carbon tube array is cylindrical and has a diameter of 1-30 microns; the part far from the nano carbon tube array is tapered, and the diameter of the tapered tip is 1 0 -1 0 0 nm. A typical tip has a depth of 30 microns and there is a significant spacing between adjacent tips, ranging from 1 to 30 microns.
第10頁 1246162 _ 案號91135118_年月日__ 五、發明說明（:7) 將上述方法製得的奈米碳管場發射元件應用於場發射 平面顯示器，可達到消除電場屏蔽效應，降低場發射電場 閾值，提高場發射效率之目的。 在以上之描述中，已揭示現有發明之特徵、優勢以及 本發明的結構、功效，但以上所述者僅為本發明之較佳實 施例，在實際應用中，凡在本發明之發明原則上的一些細 節改變，如：形狀、大小、内部元件之安置，皆應屬本發 明。Page 101246162 _ Case No. 91135118 _ year month day __ 5. Description of the invention (: 7) The nano-carbon tube field emission element prepared by the above method is applied to a field emission flat display, which can eliminate the shielding effect of the electric field and reduce Field emission field threshold for the purpose of improving field emission efficiency. In the above description, the features and advantages of the existing invention, as well as the structure and effects of the invention have been disclosed, but the above are only preferred embodiments of the invention. In practical applications, where the principle of the invention of the invention is Changes in some details, such as: shape, size, and placement of internal components, should belong to the present invention.
綜上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟，以上所述者僅為本發明之較佳實施 例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化，皆 應涵盖於以下申請專利範圍内。In summary, the present invention has indeed met the requirements for an invention patent, and a patent application was filed in accordance with the law. However, the above is only a preferred embodiment of the present invention, and it cannot be used to limit the scope of patent application in this case. All equivalent modifications or changes made by those skilled in the art of the case with the aid of the spirit of the present invention shall be covered by the scope of the following patent applications.
第11頁 1246162 _案號91135118_年月日__ 圖式簡單說明 第一圖係本發明奈米碳管場發射裝置之製造方法流程 圖。 第二圖係第一實施例製造奈米碳管場發射元件初始時 奈米碳管陣列之示意圖。 第三圖係第一實施例中雷射光束照射奈米碳管陣列之 示意圖。 第四圖係第一實施例中雷射光束照射後得到的奈米碳 管場發射元件之豎截面示意圖。Page 11 1246162 _Case No. 91135118_Year Month Date__ Brief Description of Drawings The first drawing is a flow chart of a method for manufacturing a nano carbon tube field emission device of the present invention. The second figure is a schematic diagram of the nano-carbon tube array at the initial stage of manufacturing the nano-carbon tube field emission element of the first embodiment. The third figure is a schematic view of a nano-carbon tube array irradiated with a laser beam in the first embodiment. The fourth figure is a schematic vertical sectional view of a nano-carbon tube field emission element obtained after the laser beam is irradiated in the first embodiment.
第五圖係第二實施例中用雷射光束照射奈米碳管陣列 之示意圖。 第六圖係第二實施例中雷射光束照射後得到的奈米碳 管場發射元件之豎截面示意圖。 第七圖係未經照射之奈米碳管陣列之S E M ( S c a η n i n g Electron Microscope, 掃描電子顯微鏡）圖。 第八圖係第一實施例雷射照射後所得之奈米碳管場發 射元件之SEM圖。 第九圖係第二實施例雷射照射後所得之奈米碳管場發 射元件之SEM圖。The fifth figure is a schematic view of irradiating a nano-carbon tube array with a laser beam in the second embodiment. The sixth figure is a schematic vertical sectional view of a nano-carbon tube field emission element obtained after laser beam irradiation in the second embodiment. The seventh figure is an S E M (Sca n n i n Electron Microscope, scanning electron microscope) image of an unirradiated carbon nanotube array. The eighth figure is a SEM image of a nano-carbon tube field emission element obtained after laser irradiation in the first embodiment. The ninth figure is a SEM image of a nano-carbon tube field emission element obtained after laser irradiation in the second embodiment.
第十圖係習知技術奈米碳管截斷方法之示意圖。The tenth figure is a schematic diagram of a conventional carbon nanotube truncation method.
第12頁Page 12
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