TW200404643A - Residual film monitoring device, polishing device, method for manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

The present invention provides a residual monitoring device for adequately monitoring the state of any polishing residual film over the whole or wide area of the surface to be polished of an object to be polished. A light beam from a white light source (404) is reflected from a white diffusing reflective plate (403) and diffused to illuminate substantially the whole surface to be polished of a wafer (Wm) chucked by a chuck substantially uniformly. The bright-field image of the whole area of the wafer (Wm) lluminated with the light is formed on an imaging surface of a color CCD (401) through a photographic lens (402) by the light projected onto and reflected from the wafer (Wm) and is captured by the CCD (401). A processing unit (405) outputs the result of monitoring, which indicates whether or not any residual film is present over the whole surface to be polished of the wafer (Wm) according to the color image information acquired form the CCD (401).

Description

404643 D. Description of the invention: [Technical field to which the invention belongs] ^ = Mao Yue is a residual film monitoring device that monitors the condition of the polishing surface of a polished object such as a semiconductor wafer or a wide area of the polishing residue film, and uses its daily polishing Breaking, semiconductor element manufacturing method, and semiconductor element. The present invention "for example, is suitable for a step of removing or forming an electrode layer or an insulating layer on the surface of a semiconductor element in a semiconductor device manufacturing process, a residual film monitoring device that monitors the condition of removing an electrode layer or an insulating layer, and other conditions, and uses [Previous technology] "With the increase in the density of semiconductor devices, the technology of forming multilayer wirings and accompanying interlayer edge films or forming electrodes such as pillar bases and damascene has become increasingly important. In order to carry out the plunger and grade, it is required to remove and planarize the excess metal layer after the metal film is laminated. Furthermore, if the reduction of the focal depth during exposure (resulting from the short wavelength of lithography) is taken into account, the requirements for planarization and thickness management of electrode layers or interlayer insulating films at least in the range of the exposure area are high. In order to achieve the above-mentioned planarization, a so-called CMP polishing step is generally performed. CMPC Chemical Mechanical Poiishing or Planarizati) is a physical polishing step and a chemical action (using an abrasive or a solution) to remove the unevenness on the wafer surface. By using an abrasive called a polymer, The polishing cloth is pressurized on the surface of the wafer for relative movement to perform polishing, so that the uniformity can be polished in the wafer surface. With the increase in the density of semiconductor devices, recently, in particular, the polishing condition was monitored during the polishing step of the planarization 200404643, and it is common practice to determine the polishing condition based on the monitoring results. The study of monitoring the polishing condition during polishing, the condition measurement device f 'is also called an end point detector and the like. The polishing condition monitoring can be set, for example, by determining the polishing end point from the characteristics of reflected light or transmitted light obtained by irradiating a probe light to a local area of a wafer. An example of such a grinding condition monitoring device is disclosed in Japanese Patent Laid-Open No. 40680. By using the polishing condition monitoring device in combination, the control accuracy of the local or average film thickness of the wafer pattern has been improved. However, the density of semiconductor devices is still progressing, and the need to remove the insulating layer to a minimum is increasing. One of the remaining major issues is the global (in a relatively large area) component film thickness management and flattening. ^ In addition to the slight unevenness on the surface of the polished wafer, it is also difficult to perform uniform polishing after the reaming technology that has been required to increase in recent years. It is easy to occur in the Japanese yen surface when performing the reaming step. The uneven sentence called "errosion" or "dishing" is "over-grinding". On the other hand, if there is a residual metal, it will be in a short-circuit state, and it cannot be used as a product at all, and it becomes a defective product. On the other hand, if the grinding is excessive, the resistance may increase due to the increase in resistance and the quality of the product may increase. Because of &, there is a need to manage the residual film in the step more precisely than in the prior art step by step. It is known that in order to avoid Newway ’s overestimation of the grinding time after endpoint detection, in the state of excessive grinding: End grinding. This processing method is directly related to the performance degradation or product quality deviation caused by the increase of resistance. [Summary of the Invention] 200404643 The present invention has the above-mentioned matters, and its purpose is to provide: a residual film monitoring device capable of appropriately monitoring the condition of the polishing residual film on the entire area or a wide area of the polishing surface of the object to be polished. It is another object of the present invention to provide a polishing apparatus having a high yield and capable of preventing excessive grinding. Furthermore, the present invention is directed to a method for manufacturing a semiconductor device, a method for manufacturing a semiconductor device capable of manufacturing a bulk device with improved yield, and a semiconductor device. To provide: a semiconductor that is less than the conventional semiconductor element and has less product quality deviation, and a low cost and less product deviation. To solve the aforementioned problem, the first aspect of the present invention! The residual film monitoring device of the form monitors the polishing residual film of the entire grinding surface of the object to be polished or a wide area; it is provided with an image information acquisition section for obtaining illumination light containing a plurality of wavelength components. The color image information of the bright field image of the entire or wide area of the surface of the object being illuminated; and the processing section,. For example, if the semiconductor wafer to be polished includes a plurality of wafer areas. In addition, "the color R (red), G (green), and B (blue) three-component case, the case of any two components of G, B is also possible. This point is the same. According to the shirt color image information, the display Monitoring result of the condition of the polishing residue film "The wide area system" is not limited to including, for example, only R, and each of the forms described below, and the monitoring result includes the presence or absence of the polishing residue film according to the third aspect of the present invention. The shape of the residual film monitoring device, the monitoring result includes the grinding device, phase 1 or related information at the aforementioned residual film position

ZUU4U404J The residual film of the fourth aspect of the present invention is a visual inspection device. In the first or the Z-evil described above, the bright field image is a blurred image. In the fifth embodiment of the residual film monitoring device of the present invention, the image information acquisition unit of the aforementioned "form-form-form" is obtained by acquiring the color image data on a 5-hole babe. In this "" Sixth Tragedy Residual Film Monitoring Device ", the image information acquisition section of the aforementioned nth Tragedy, = Ren-morphology, is obtained by scanning the color image by scanning. &Amp; Residual film monitoring device of the seventh form of the native Ming, in the aforementioned n-form any open / sad, illegal image acquisition unit, the color image information is gradually scanned with the rotation of the object to be ground Get. 8. The residual film monitoring device of the eighth aspect of the present invention, in the aforementioned seventh aspect:-the aspect, the processing unit 'has: an arithmetic unit, regarding the color: image like a shell continued from 7F or applying a predetermined to this The processed image calculates the position of each image indicating the relative relationship between the intensity values of a plurality of colors at the same position in the image; and the determination unit determines the value based on the value of the relative relationship at each image position. This polishing residual film condition The residual film monitoring device according to the ninth aspect of the present invention, in the eighth aspect, the predetermined processing is smooth processing. In the tenth aspect of the residual film monitoring device of the present invention, in the aforementioned eighth or ninth form, "the value indicating the relative relationship between the intensity values of a plurality of colors located substantially in the same image" includes substantially the same Position within the image

ZUU4U4b4J The difference or ratio of the intensity values of the two colors. According to the residual film monitoring device of the present invention, in the aforementioned tenth step, the determination unit determines the presence or absence of the image ^ position where the difference or ratio is within a predetermined range to determine the residual film. Yes or no. & The residual film monitoring device of the twelfth aspect of the present invention, in the tenth aspect, the determination unit obtains the correlation of the position of the residual polishing film according to the position within the image in which the difference or the ratio is within a predetermined range. Information. The residual film monitoring device of the thirteenth aspect of the present invention includes a display unit in any one of the foregoing forms of evil, and displays at least one of the image shown by the color image and the image processed by the color image. Party. The residual film monitoring device of the fourteenth aspect of the present invention is the aforementioned one. Any of the forms of L / L 'is provided with a memory unit to memorize at least one of the image indicated by the color image information and the image subjected to the processing. A residual film monitoring device according to a fifteenth aspect of the present invention, in any one of the foregoing aspects, the object to be polished is a semiconductor wafer. A polishing apparatus according to a sixteenth aspect of the present invention is configured to grind an abrasive between an abrasive and an object to be polished by applying a load between the abrasive and the object to be polished and performing relative movement. The object to be polished is provided with a residual film monitoring device, and the condition of the polishing residual film on the entire area or a wide area of the polishing surface of the object to be polished is monitored with a cymbal. A polishing apparatus according to a seventeenth aspect of the present invention, in the aforementioned sixteenth aspect, is provided with a polishing condition monitoring device for monitoring the polishing condition of the object to be polished during polishing. The eighteenth form of the grinding device of Benmemin is equipped with at least one grinding zone. 84 10 200404643 grinding zone, in which at least one grinding zone interposes the abrasive between the grinding body and the object to be ground. The object to be ground is ground by applying a load between the body and the object to be ground and moving relative to each other; at least one of the at least one grinding area is provided with a grinding condition monitoring device at the same time. During the grinding, the grinding condition of the object to be ground is monitored; and the residual film monitoring device monitors the condition of the grinding residual film on the entire or wide area of the grinding surface of the object to be ground. According to a nineteenth aspect of the present invention, in the eighteenth aspect, the at least one grinding area is at least two, the object to be ground is sequentially ground in the at least 1 g grinding area, and the residual film monitoring device. Is set in at least one grinding zone among at least one grinding zone after the object to be ground is subjected to the second grinding. In the polishing device of the twentieth aspect of the present invention, in any one of the aforementioned ι7 to 19 aspects, the residual film monitoring device stops the grinding of the object to be polished according to the monitoring result of the polishing condition monitoring device, and then The grinding residual film condition is monitored in-line; the grinding device performs different actions according to the monitoring results of the residual film monitoring device. Read · The polishing device of the 21st aspect of the present invention, in the aforementioned 20th aspect, when the monitoring result of the residual film monitoring device on the right indicates that the residual polishing film is present, the object to be polished is polished to reduce the residual polishing film or disappear. According to a twenty-second aspect of the present invention, in the polishing device of any one of the sixteenth to second aspects, the residual film monitoring device monitors the polishing residual film while maintaining the object to be polished at the polishing position. situation. A polishing apparatus according to a 23rd aspect of the present invention is the 1622th aspect

In any form of π 200404643, the residual film monitoring device monitors the condition of the polishing residual film in a state where the polishing body is retracted from directly above the object to be ground. In the polishing apparatus of a twenty-fourth aspect of the present invention, in any one of the aforementioned sixteenth to twenty-third aspects, the residual film monitoring device is a residual film monitoring device of any one of the fifteenth to fifteenth aspects. According to a twenty-fifth aspect of the present invention, in the twenty-fourth aspect, the 4th bright light passes through a predetermined area on the top of the polishing device or a predetermined area of a member located near the top, or from a predetermined area or device on the top. The emitted from a predetermined area of the component near the top ridge irradiates the entire φ area or wide area of the surface of the object to be ground. According to a twenty-sixth aspect of the present invention, in the polishing device of any one of the sixteenth to twenty-fifth aspects, the object to be polished is a semiconductor wafer. A twenty-seventh aspect of the present invention is a method for manufacturing a semiconductor device, which includes a step of flattening the surface of a semiconductor wafer by using a polishing apparatus of any of the sixteenth to twenty-sixth aspects. A semiconductor element according to a twenty-eighth aspect of the present invention is manufactured by the semiconductor element manufacturing method according to the twenty-seventh aspect. [Embodiment] Hereinafter, a residual film monitoring device, a polishing device, a semiconductor device manufacturing method, and a semiconductor device according to the present invention will be described with reference to the drawings. Fig. 1 is a schematic plan view schematically showing a polishing device in an embodiment of the present invention. Fig. 2 is a schematic plan view showing a round processing condition of the grinding apparatus shown in Fig. 1; For the convenience of the drawing, Ί diagram ′ is to omit the residual film monitoring device 400 which will be described later, and in FIG. 2, it is to omit the polishing condition monitoring device 50a which will be described later 12 200404643. The polishing device 1 in this embodiment is an example of a CMP device for precisely and flatly polishing a semiconductor wafer to be polished in a 3 P "and polishing step. The polishing device 1 is shown in Figs. It consists of an E-box index (100), a wafer cleaning unit (200), and a polishing unit (300). Each part is separated to form a clean room. X. Automatic can also be set between each room. Opening-closing shutter. The cassette indexing section 100 includes a wafer mounting table 120, a cassette (also called a carrier) for holding and holding a plurality of wafers, and a first transfer robot 1 50. The unprocessed wafer is taken out of the cassette and transferred to the cleaning machine temporary table 21 of the cleaning section, and after the grinding process, the processed wafer that has been cleaned in the wafer cleaning section 200 is stored in the box. 1 The transfer robot 150 is a multi-joint arm type robot having two multi-joint arms 153a and 153b, which are provided with: a base ΐ5ι; a rotary table 152 on which the horizontal rotation and lifting movement of the base 151 are free; The closing arms 153a and 153b are installed on the rotating table 152; the a-arm 155a and the B-arm 155b are installed on each multi-articulated arm The front ends of 153a and 153b can be stretched and retracted freely with respect to each arm (the B arm 155b is offset and arranged below the A arm 155a and overlaps in the figure! And Fig. 2). It is at the front end of the A arm 155 & and the b arm 155b A holding unit is formed to hold and hold a wafer. The base 151 is provided with a linear moving device and moves horizontally along a linear guide 160 arranged on the ground. Therefore, the first transfer robot 150, Able to move along the linear guide to the front of the destination box. 'Rotate the turntable 152 horizontally and lift it. 13 200404643 Move the A arm 155a or the B arm 155b to the head rrA3rfl55a, or the Jing arm 1 coffee and Zhan Ϊ 55β 3 μ ^ ^ χ < at the front end of the β arm 155b, and the holding part of the beep sucks and holds the unprocessed wafer in the target slot and the target slot. $ Μ The processed wafer is accommodated in the upper and lower directions. These configurations of the bit configuration are functionally equivalent, although they can be configured to use any of the 155a and 155b systems, and can be configured to use either the arm for taking out or receiving or only the -square arm as a grinding device for both parties. This is the case of Lu Hong · Luo ^ Ren Yan again in the study of the map. The raw wafer is below The arm 155b is taken out from @ 人, and the method, & secret > 1, 丄 Wt) and E box. The A arm 155a on the upper side of the wafer is accommodated in the g wafer cleaning unit 200. No.! Wash ^ 220, No. q, No. 2 washing room, No. 3 washing room 23, and dry wafers are sent to the first washing room 2 'in sequence. Second: Grinded processing room 230-drying room 24 (), Perform the grinding total working fluid attached to & i G—the third cleaning agent or the polishing process f processing 邛 300, and the abrasive abrasion: remove the cleaning in the first washing, the zero washing. For example, to use the rotating brushes to make up the armored to 210 series. 2 The cleaning room 22G is connected to the ultrasonic vibration a ^ 'in the first clean room; in the third cleaning room 230, Sun Bo enters the surface cleaning room 240 (Pencil). It is dried in nitrogen. In addition, the dry wafer does not need to pass through the above-mentioned cleaning step, and the unwasher temporary table 211 is used to read the plate index port P 100 through the part 300. k Clear section 20 ° and carry in wafer polishing

The polishing unit 300 is provided with a division A blade. 340, make 4 divisions and step by step 14 200404643 Motors and other movements at 90-degree rotation. The polishing table 310, the second polishing table 320, and the third polishing table 330 are set to correspond to the positioning stop positions of the indexing table 34, and surround the indexing table 340 from the outer periphery; and the transfer table 35, which carries unprocessed wafers into At the indexing table 34, the processed wafer is removed. Also referred to as a 'grinding table' is sometimes referred to as a grinding zone or a grinding chamber. Each area of the four-division indexing table 340 is provided with chucks n ~ V4 that suck and hold the wafer from the back and are exposed on the table. Each of the cool heads vi ~ n is supported on the indexing table 340 so that it can be horizontally ( In the figure, the surface parallel to the paper surface: the slave turns freely and is set to be able to rotate or keep stopped at a high speed by the electric motor or the pneumatic + drive set in the indexing table. Also, the chuck The diameter of V4 is slightly smaller than the diameter of the wafer, and it can hold and hold the wafer outer peripheral ends of the chucks n to V4. The first polishing table 310, the second polishing table 32, and the third polishing table 33 〇 = Do not set grinding arms 311, 321, and 33. Each grinding arm can be opposed to the indexing table :: swing horizontally and move up and down in the vertical direction "" Install grinding at the end before each research 2 Γ, 321, 331 The head (not shown) can sag from the U, 321, and 331 and rotate at a high speed in the horizontal plane. = Bottom: The surface has a grinding body that is rotated by relative rotation with the wafer, that is, a grinding pad. And:- : The owner of the work 廿 Wσ, equipped with a polishing pad dresser 317 and 32 pads for dressing the surface of the polishing pad. Dynamically exchange the grinding i and change the devices 318, 328, 338. The grinding arms, chucks, and grinding and changing devices of each grinding table are based on the grinding head positioned at the front of the grinding arm. Movement: Grinding: The father limits the relative position. Because ... For example, if you want to perform grinding on the first grinding table 200404643 31 0, swing the grinding arm 311 to move the grinding head to the chuck V 4 and move the grinding head and the chuck V 4 The relative rotation, and the polishing arm is carried out by lowering the polishing arm 311 to press the polishing pad against the wafer. During the polishing processing, a slurry is interposed between the polishing pad and the wafer. In addition, during the polishing processing, In the final stage, the abrasive on the object to be polished is washed with a water supply device (not shown), for example, by rotating the chuck to perform dehydration. 0 After completing all the grinding processes, if the grinding arm 311 is slightly raised, it can be rotated. Dynamic indexing table 340. At this time, the polishing arm 311 is swung after the predetermined number of polishing times, and the polishing pad is trimmed by the polishing pad conditioner 317 (repairing the clogging or uneven mesh of the polishing pad). Time, Then, the polishing arm 311 is swung, so that the polishing pad is moved above the polishing pad exchange device 38, and the polishing pad is automatically exchanged by the device. In addition, the polishing pad dresser can also be arranged on each chuck adjacent to the indexing table 34. Directly next to it. With this configuration, the polishing pad protruding from the wafer periphery can be trimmed during the polishing process, thereby further reducing the time required for polishing. The polishing arm 311 is provided with a swing angle position of the detection arm. An arm position detector (not shown) detects the grinding processing position or dressing position of the grinding arm 311. In addition, as shown in FIG. 1, each grinding table is equipped with a grinding condition monitoring device 50a 'to optically monitor the grinding process. Wafer polishing status, real-time detection of film thickness reduction during polishing. As the polishing condition monitoring device 50a, for example, Japanese Patent No. 200200 can be used. _ The device disclosed in the 20040683 publication. In the present embodiment, the grinding condition is monitored by 5 Ga so that the arm 61 extends parallel to the grinding arms of each grinding table and swings freely in the tangential direction. An optical fiber or the like is embedded in the arm 61, from. The probe light is locally irradiated to the chuck for polishing processing // receives reflected light from the wafer and is guided to a predetermined position. The arm 61 is configured to prevent the mechanical interference with the grinding arm by swinging synchronously during the grinding process. In this embodiment, the polishing condition monitoring device 50a 'monitors the polishing condition based on the reflected light from the wafer obtained when the front end of the arm 61 is positioned on the wafer. The above configuration and operation are also the same in the second polishing table 32o and the third polishing table 330. In this embodiment, as shown in FIG. 2, a residual film monitoring device 400 (strictly, an optical system thereof) is installed on each of the second polishing table 320 and the third polishing table 330 to monitor wafer polishing. Polishing residual film condition on the entire surface (above this embodiment). Further, in the present invention, the residual film monitoring device 2 does not necessarily have to be the polishing residual film condition over the entire polishing surface of the wafer, but can also monitor the polishing residual film condition over a wide area of the polishing surface. Since the residual film monitoring device 400 will be described in detail with reference to FIG. 5 and the like, only a brief description will be given here. Each residual film monitoring device 400 irradiates the illumination light on a wafer held on a chuck (wafer holding portion) positioned at each of the stages 320 and 300, that is, a wafer held at a polishing position of each a 320, 300. The whole circle is used to obtain image information of the entire image of the wafer illuminated by its illumination light, and based on the image information, a monitoring result indicating the condition of the polishing residual film on the wafer is obtained. In this embodiment, the illumination light is irradiated to the wafer held at the polishing position to obtain the image data of the wafer. Therefore, when the residual film monitoring device U is used, the polishing amine on the wafer is used. Stop the grinding of the grinding A ~ "Remove the grinding head and the grinding arm from the research hall # 40 by the film condition." The light path retreated. The second part is retracted from the upper part of the residual film monitoring device, the female one, and the arm 61 of the grinding condition monitoring device 50a, if there is a place to cover the light path, bismuth 眭 ± 予 # 61, ^ ^ ^ Ψ The light path recedes. In this man, I am sad, and the residual film monitors your dreams. You can get the residual film on the wafer. t __ 磨 _'s position as the monitoring result

Machine-Man II: Set the 2nd transfer robot ⑽ and the 3rd transfer robot 36G, which are the same as the aforementioned ^ transfer; Γ: Γ multi-joint arm robot, which is equipped with: 2 multi-pass j 3b swinging installation On the horizontal rotation and lifting rotator 362; and A-arm and 6-arm dove, telescopic ^ = set at the end of each multi-joint arm coffee, front. Af 365a and ^ 65b are placed in the upper and lower positions, and 3 coffees and daggers are placed on both arms. Form a holding portion on which a wafer is placed and held by suction.

The 3rd person of the third moving machine series 37 is equipped with: swing arm π, the index table: 0 to horizontal swing freely and move up and down in the vertical direction; the spinner, 372, horizontally rotates freely on the swing arm 371 A jig 3758 and a B jig 375b are mounted on the ends of the swing arm, and are suspended from both ends of the swing arm 372 to hold the outer peripheral end of the wafer. A jig 375a and b jig 37 =, & are arranged on the same distance from the rotation center of the rotation arm 372. Alas. In addition, the state shown in FIG. 1 shows the standby posture of the third transfer robot 37 (). Below the A jig 375a and the B jig 375b, 18 200404643 in the figure, the knife is placed, and the A on which the unprocessed wafer is placed is placed. The temporary table 381 and the B temporary table 3 8 2 on which the polished wafers are placed. Therefore, by swinging the swing arm 371 of the third transfer robot 37o, and further rotating the rotary arm 372, the A-fixture 375UB and the 375b can be moved to the chuck νι of the stage 34. At this position, the swing arm 371 is lowered, and the wafer on the chuck is received from the outer periphery 3U main by the A jig 375a or the β jig 375b, or a new wafer is placed on the chuck. In addition, the wafer after the grinding process will adhere to the grinding processing liquid containing the abrasive, so the wafer and the arm and the fixture before the grinding process are distinguished from the wafer and the arm and the fixture after the wafer is removed from the grinding process. Among the upper and lower A, B arms 365a, 365b, the upper a arm 365a is used as a carry-in for raw wafers, and the lower β-arm% π is used as a carry-out arm, or the A jig 375a is used for carry-in As a jig, the B arm 375b is used as a jig for carrying out. Next, the operation of the polishing apparatus constructed as described above will be described. The following description is based on the case of the Cu-CMp process, that is, a wiring groove is formed on the silicon substrate 51 as shown in FIG. 3 (a), and a barrier such as TiN or TaN is formed in the groove. Layer 52, further forming a copper conductive layer 5 3 thereon (referred to as an unprocessed wafer in the present specification), the copper conductive layer 53 and the barrier layer 52 are processed by the i-th polishing process by the CMP method, The second polishing process P2, the third polishing process p3, and the third-stage polishing process are polished to be flat, and a conductor wiring groove 53a as shown in FIG. 3 (b) is formed on the silicon substrate 51. In the following example, the first time The polishing process P1, the second polishing process p2 19 200404643, and the third polishing process P3 are performed on the i-th polishing table 31Q, the second polishing table 320, and the third polishing table 330, respectively. In the second grinding process P2 and the third grinding process p3, because the control of the end point of the grinding process is required, the end of the grinding process is ended by detecting the end of the grinding process by monitoring the grinding condition of Pei 50a. On the other hand, since the first grinding process P1 is a grinding process before the second grinding process p2, the end point detection is not required. Therefore, make the first grinding

The process P1 ends the grinding process with time, and ends with the predetermined grinding process interval tPl.

In FIG. 2, the flow of the wafer is indicated by dashed lines and arrows, that is, the raw wafer Wd of Gugo in the E-box index section 100 and the box ^ is sequentially polished in the polishing section ^ to become FIG. 3 (b). The processed wafer 矸 shown is cleaned and processed in the round cleaning section 200 and is stored in the box index 100. In addition, each of the transfer robots 150, 36, and 37 or indexing ^ 340 'chucks n to V4, grinding arms 311, 321' 331, grinding heads, etc. is composed of a personal computer or the like (not shown). The control unit controls such operations according to a preset control program. First, start the grinding device 1 and start the grinding process. The j-th transfer robot 150 moves to the position of the cassette C1, and rotates the rotary table 152 horizontally and moves up and down to the height of the wafer slot with the 8-arm 155b as the target. The multi-joint arm 153b and the B-arm 155b are extended, and the unprocessed wafer Wd in the holding slot is attached to the front end of the Bf 155b, and both arms are retracted and pulled out. Then, the rotary table 152 is rotated 180 degrees toward the wafer cleaning section 2000, and the unprocessed wafer Wd is placed on a cleaning machine temporary 20 200404643 table 211 installed in the cleaning section 2000. The second transfer robot 360, which is carried into the stage 350 across the wafer cleaning chamber 200, and when the unprocessed wafer Wd is placed on the temporary stage 211, the revolving port 3 6 2 is operated and the a arm 3 6 5 a The front end part is rotated toward the washing machine temporary table, and the method is rotated to make the Dagoro arm 363a and the A arm 365a elongate, and the holding part of the a-arm end is used to adsorb and hold the raw crystals on the washing machine temporary table 211: Wd. Then, while holding the unprocessed wafer M, the multi-joint arm 3a and the a arm 36 = a are retracted, and the rotary Poyang rotation action is reversed, and then the eve close arm 363a and the A arm 365a are extended to extend The processing wafer Wd is placed on a # A temporary table 381. '' After the unprocessed wafer W is placed on the A temporary table 381, the third carrier, "A", is used to hold the unprocessed wafer in the 7 " lowering operation. After being held, it is raised to the standby position at a predetermined height to Indexing table 为止 f position is completed (standby position). Indexing table 34 (Swing # 71 和 旋 动 # 372 is swung and rotated after positioning at the M booth to place the unprocessed wafer on

The head V1 is sucked and held. Then, the third transfer robot 370 lifts the clamp and swings and swings the swing arm 371 and the swing arm to hold the next unprocessed wafer A jig, and waits for the next index operation at a predetermined position at a predetermined height. Thereafter, the polishing section 30 is started. Grinding process. Fig. 4 'is carried in the carrying-in stage 35 as described above. The flow of the unprocessed crystals through the second grinding table 32 °, M ^ 3 grinding σ330, and the exit from the conveying table 350 is described below. The following is a description of each grinding table from FIG. 4-starting from Grinding process. 21 200404643 The process described in the following description will be performed in time sequence until one unprocessed wafer Wd is added to each station to be processed wafers and then stored. However, each station The rotary table 340 rotates to load new wafers in turn, and each time the rotary table 340 rotates to move out new processed wafers, and each table simultaneously performs different operations related to different wafers. Raw wafers wd Adsorption and retention On the chuck V1, the third transfer robot 370 retracts from above the indexing table 340 (step S1), and in step μ, turns the indexing table 340 to the right (clockwise) in Fig. 1 and Fig. 2㈣9q The raw wafer Wd is positioned at the i-th polishing table 3m0 (the position of V4 in Fig. I and Fig. 2). At this time, at the same time, the polishing head 3 is moved to move the polishing head onto the unprocessed wafer Wd. After the indexing table 340 stops positioning, proceed to step S3 'Turn the grinding head and the collet ^, for example, opposite Rotate at a high speed, and lower the polishing arm to press the polishing pad at the lower end of the polishing head onto the wafer, and perform the first polishing plus P1 on JL PI y-rix ^. During the polishing process, from the axis pad of the polishing head Zai ill ># Ｍ Shi Ying should be abrasive to reciprocate between the center of the 2 00 and the outer end ^ The arm 311 swings in a small range to crystallize the table 350, force it! Aa back Tan grinding. During the transfer process, the new unprocessed wafer is transferred to the chuck π by the robot 370 during the grinding process of the first and second brothers. The first grinding process control on the first grinding table 310 has been completed. In the following example, the life time P1 is as described above, and the grinding processing time tDU half after the previous work has been completed. After arm 1 μz & π Ρ step S4), the grinding # 311 is raised to stop at the first grinding table After 30 minutes, proceed to cattle jealousy, grinding process (step S5), proceed to ... 6. In step S6, determine whether the indexing table M is capable (that is, whether or not the first stage of the grinding table outside the Taichuan is OK ~ oral moxibustion Whether the action is completed), 22 200404643 If it is not possible, wait until it is possible, and if possible, go to step S7. In step S7, The stage 340 is rotated 90 degrees to the right again, and the wafer of the first polishing process P1 of the laser beam is positioned at the second grinding stage 32 (the position of V3 in FIG. J and FIG. 2). At this time, simultaneously The polishing head 321 swings to move the polishing head onto the wafer. Then, the process proceeds to step S8 and the polishing arm 3d is lowered. The second polishing table 320 is polished by the same operation as in the first polishing process P1 described above. Machining (second grinding process p2). The second grinding process p2 on the second grinding table 320 is a so-called end point detection process. When it is judged that the thickness of the processed film detected by the grinding condition monitoring device of the second grinding table 32 is reduced to a predetermined film thickness set in advance (step a S9) 'Raise the grinding arm 321 and stop the grinding on the second grinding table ㈣ Processing and polishing #j (si cleansing and dewatering on the object to be polished) (step S10). 'Second system ° 卩 The polishing head and the polishing arm 321 are retracted from the chuck side to perform the second polishing Α 4 j One research insurance. Grinding residual film on 320 residual film monitoring device 4 (Here is a gift from Na Xiyu, Dishliri δ residual film of copper (other than the conductive conductor wiring groove 53a in FIG. 3) Part), 3 of the < ^ ψ Ann ^ ^ ^ step 1). Right from the residual film monitoring '400 "" Monitoring of the absence of grinding residual film), proceed to step S14. On the right side, the residual film monitoring device 400 obtains the polishing residual film _ When the monitoring result is obtained (in step 唧, the ant film 4 12 series), and then the polishing arm q 9 moves the polishing head to the wafer ξ 321 ^ ^ Step α is further advanced to lower the grinding arm 321, and the grinding process of step S8 is performed ^ m 320 Λ ^ ^ 冋 to perform the second grinding 32 0 additional grinding processing (step ^ which M3). The grinding processing of step S13, 23 200404643 is performed under time control, and it stops after a predetermined time, and returns to step S10. Therefore, in step S13, the grinding of the second grinding table 320 The operation of the condition monitoring device 50a is not required. The steps, such as polishing processing, can be performed in the same polishing processing conditions as the steps except for the time control or end point detection processing, and the entire wafer is polished. However, for example, 'When obtaining information on the location of the polishing residual film from the residual film monitoring device in step S11', the polishing process of step S10 is followed by the second message. Attach the position, and set the grinding processing conditions for = spot grinding (setting of the center position of the grinding head, setting of the presence or absence of grinding swing, setting of the chuck rotation conditions, etc.) From the above description, it is known that 'When it is necessary to proceed to step su, Even if there is a polishing residual film on the wafer after the step, the polishing residual film is removed by the additional polishing step S13. In other words, the second polishing is performed. When the second stage of the coffee table 2-under-grinding process p2 is completed, proceed to step si 4. In step S14, determine whether the operation of the indexing table 34o can be performed ^ whether the operation of the carrier other than the grinding table is completed), if not ^ Wait until it is possible. If possible, go to step S15. ~ At step S15, make the indexing table 34G rotate to the right by 9g degrees 2 times for grinding and p 2 night, and the grinding force P2 The Japanese yen is located on the third grinding table 33 ° (position 2 in FIG. 2). Then, the grinding arm 331 is lowered, and the grinding process on the third grinding table 33 ° is performed by the upward movement: the same work P3) (step S16). -Person grinding and polishing The third grinding process p3 on the third grinding table 330 is the same as the second grinding process P2, which is the so-called finishing process: step S8. When it is judged that the processing film thickness detected by the grinding condition monitoring device of the 200404643 third grinding table 330 is reduced to a predetermined film thickness (step s), the grinding arm 331 is raised and the grinding processing at the third grinding table 33 is stopped. (Step si8). And 'Remove the grinding head and the grinding arm 331 from directly above the chuck, so that the residual film of the third grinding table 3 3 0, resident ^ ^. Waveset 400 monitors the condition of the polishing residual film (here, the barrier layer 52 < the residual film (the portion of the barrier layer 52 in FIG. 3 (a) other than the residual portion in FIG. 3))) ( Step ⑽. If from the residual film

When the monitoring device obtains the monitoring result of the absence of the grinding residual film (No in step S20), it proceeds to step §22.

On the other hand, if the monitoring result of the remaining grinding film is obtained from the remaining film monitoring device 400 (YES in step S20), the grinding arm 331 is swung to move the grinding head onto the wafer, and the grinding arm is further advanced. 331 is lowered, and the same grinding operation as in step S16 is performed to perform the additional grinding processing in step 330 (step _. The grinding processing in step S21 is performed under time control, and it stops after a predetermined time, and returns to step ⑽ therefore 'In step S2, the action of the polishing status monitoring of the polishing table 33Q is not required. In addition to the difference in time level =: in the polishing process of step S21, it can also be performed under the conditions of step 1 and 5 1 1 on the polishing force. The whole circle is ground. However, for example, == from the residual film monitoring device _ to obtain the monitoring result of the polishing residual film when the 'step S21 grinding process is performed, according to the grinding process, only the location of the grinding process strip or the location near the point Grinding is useful to set the center position of the headline, the setting of the grinding swing, the setting of the chuck rotation conditions, etc.). 25 200404643 From the above description, it is known that when the process proceeds to step S22, even if there is a polishing residual film on the wafer after the step, after the step such as < additional polishing processing ', the polishing residual film will be removed. In other words, when the third-person grinding process P3 of the 帛 3 grinding table is completed, the process proceeds to step S22. 々 In step S22, it is determined whether the operation of the indexing table 34o is possible (that is, whether the operation of the stage other than grinding D 330 is completed), if it is impossible, wait until it is possible, and if possible, go to step S23. ^ / Step S23 Rotate the indexing table 340 90 degrees to the right, and position the wafer on which the third person has finished the grinding process p3 on the transfer table (position VI in Figs. 1 and 2). After the indexing table 34 stops positioning, 帛 3 transfer robot, 吏 swing # 371 and swing arm 372 swing and rotate to remove the processed wafer Wp that has finished the grinding process (step 4), and move the next one The unprocessed wafer wd is carried on the chuck V1 and sucked and held on the chuck π to step S1. The processed wafer Wp is placed on the B temporary table 382 and the third transfer robot 3 7 0 stops at the standby position, Chu 9丨 After the machine is turned on, the second moving robot 36 moves the rotary table 362, the articulated arm 363b, and R 厝 ^ β # 365b, and sets the σ 382 on the holding part at the front end of the B arm. The processed wafer Wp is adsorbed and held, and the rotation Δ 362 is rotated to extend the multi-joint arm and the 8 arm to load the wafer Wp at the cleaning machine inlet 216 of the cleaning unit 2000. In the washing section 200, two-side washing using a rotating brush is performed in the first! Cleaning room 21 °. 'The second cleaning room 22G is sprayed on the surface under the ultrasonic vibration chamber and used in the third cleaning room 23G. The pure water is spin-washed and rolled to 240 to dry in nitrogen. Then, as described above, 26 200404643: a clean wafer finished product is borrowed. The box arm bow u " 00 of the " general delivery machine «person 150's A arm 155a is taken out from the washing section 200 and is stored in a designated slot of the box c4. In this embodiment, as described above, A residual film monitoring device is provided on the second polishing table 320. If there is a polishing residual film on the second polishing table 32q, the step: additional polishing processing of S13 is performed. Thus, according to this embodiment, the copper conduction in FIG. 3 can be accurately performed. The remaining film of the layer 53 is subjected to the second-person grinding process p2 of the second polishing table 因此. Therefore, by removing the remaining film of the copper conductive layer μ, the short circuit can be prevented and the yield can be improved. Excessive grinding (excessive grinding) of the wiring groove 53a can also reduce the deterioration of the wafer performance or product deviation caused by the increase in resistance. As described above, 'When the third grinding table 330 is provided with the third grinding table 330, it is advancing. Also, in this embodiment, if the residual film monitoring device 400 performs additional grinding processing in step S21, therefore, according to this embodiment, ^ & Refine the barriers in Fig. 3 | 52 of the residual film , While the third grinding table

The third polishing process P3 of "0". Therefore, from this point of view, the yield can be further improved, and the degradation of wafer performance or product deviation caused by the increase in resistance can be further reduced. In the embodiment described above, a residual film monitoring device 400 is installed on both the second polishing table 32 and the third polishing table 330. If there is a polishing residual film on the second polishing table 320, step S13 is performed. An example of the additional polishing process of step § 21 is performed when additional polishing is performed on the third polishing table 33. However, for example, in this embodiment, the residual film monitoring device 400 of the third polishing table 330 may be removed, and steps si8 to 2i 27 200404643 may be removed. If it is determined to be YES in step SI7, the process may proceed directly to step S22. In addition, the residual film isolation test 400 of the second polishing table 320 and the third polishing table 330 may not operate on the entire wafer, and if necessary, it is driven by sampling according to the batch, and the re-polishing amount is determined according to the batch. In this case, after the end point is measured by the polishing condition monitoring device 50a, the target step can be continued to be polished under the predetermined conditions for removing the residual film (the second polishing process p2 or the third polishing process P3). In addition, although the description of this embodiment shows an example of precise polishing control in the Cu-CMP process, the present invention is not limited to such applications, except for processes such as an interlayer insulating film processing process or a sn process. In addition to wafer processing, it is also applicable to processing processes such as quartz substrates, glass substrates, and ceramic substrates. Furthermore, the polishing apparatus of the present embodiment is an example of a polishing apparatus that uses a four-stage indexing table 340 and performs a polishing process with three-stage polishing tables 31, 32, and 33. On the other hand, although it is well known that the grinding process of the second stage grinding table is ordered, if a residual film monitoring device 400 is set on the second grinding table, as shown in Figure 5 (a), The miniaturization of the indexing table can provide a space-saving grinding device. In addition, as shown in FIG. 5 (b), if the indexing table 347 is divided into five and is configured as a four-stage polishing table, an appropriate polishing table can be selected ... a plurality of stages or a plurality of stages can be provided with a residual film monitoring device. 400. Although the size of the device increases with the increase in the diameter of the table, it is possible to provide a polishing device capable of obtaining a high productivity of about 2 times the conventional ratio. In the example of FIG. 5 (b), a residual film monitoring device 400 is installed on the second polishing table and the fourth polishing table. 28 200404643 Its-person 'I will refer to FIG. 6 and FIG. 7 to explain the residual film monitoring device 400 used in FIG. 1 and FIG. 2 in detail. In addition, the 4 points of the residual membrane monitoring display 0 constitutes the requirements 401, 402, and 403, as shown in Fig. 2 as well, please refer to Fig. 2 as well. Fig. 6 is a schematic configuration diagram of a residual film monitoring device in which an optical system is installed on a polishing table 330. The optical system in FIG. 6 is seen from the direction of the hoe A in FIG. 2. FIG. 7 is a diagram showing the arrangement of the optical system of the residual film monitoring device & Here, the residual film monitoring device 400 in which the optical system is installed on the third polishing table 330 will be described, but the same applies to the residual film monitoring device 400 in which the optical system is installed on the second polishing table 320. The residual film monitoring device 400, as shown in ® 6, is provided with: a two-dimensional RGB color CCD 401; a photographic lens 402; a white diffuse reflection plate 403; a white light source 404; and a processing unit 405, for example, using an image processing circuit or A display portion 406 such as a microcomputer or a CRT or a liquid crystal panel; and a memory portion 407. The white light source 404, for example, uses a stroboscopic flash (str0b0) to emit stroboscopic light with a uniform spectral spectrum. This stroboscopic light, for example, φ contains a green color near 54nm, and has a sufficient spectral spectrum in a wavelength range from 400nm to 700nm. In addition, it is not a concern that the white light source 400 may be a continuous light source. The light emitted from the white light source 404 is reflected and scattered by the white diffuse reflection plate 403 as shown in FIGS. 6 and 7, and is clamped to the chuck (not shown in FIG. 6. If the indexing table 340 is shown in FIG. 2 At the rotation position shown, the exposed area (the area to be inspected for the presence or absence of the residual film 29, 200404643 area) on the wafer Wm (ground surface) of the wafer Wm, which is V2), is illuminated uniformly. The white diffuse reflection plate 403 has a sufficient area to cover the exposure area of "Yen-Yen Wm." Here, the minimum size of the "white diffuse reflection plate 403" is preferably: a photographic lens 402 and a wafer. The interval between Wm is hi, and the interval between wafer Wm and white diffuse reflection plate 403 is h2, which has a shape similar to the exposed area of wafer Wm, and the exposed area of wafer Wm has {(hi + h2) / hi} When the size is more than twice, if the white diffuse reflection plate 403 has uniform intensity, the captured image can also obtain relatively uniform illuminance. This calculation can be applied when there is an entrance pupil near the photographic lens 402. When the wafer Wm is irradiated The image of the exposed area of the wafer Wm formed by the light reflected from the wafer Wm is imaged on the photographing surface of the color CCD 401 by the photographing lens 402. In this embodiment, the photographing lens 4 is used to substantially prevent The image of the wafer Wm is blurred and can be imaged on the imaging surface of the color CCD 401. The positional relationship between the white diffuse reflection plate 403, the photographic lens 402, and the color CCD 401 on the wafer Wm is set as shown in FIG. 6 and FIG. Circle Wm regular reflection The image of the exposed area of the wafer Wm formed by light can be imaged on the photographic surface of the color CCD401. That is, the bright field image of the exposed area of the polished surface of the wafer Wm is photographed with the color CCD401. In this embodiment, The white diffuse reflection plate 403 serves as the background of the bright-field image, and serves as a background for uniformly illuminating the wafer Wm. In this embodiment, the white diffuse reflection plate 40, the photographing lens 402, and the color CCD 401 'are all It is installed near the top 333a of the polishing table 320, effectively utilizing space. 200404643 As can be understood from FIG. 6 and FIG. 7, it is possible to use a condenser instead of the white diffuse reflection plate 403. For example, instead of the white light source 4 〇4 and the white diffuse reflection plate can also integrate the self-colored diffuse reflection plate and other transmissive members with the white light source for illumination to form a surface light emitter, which is placed as a background near the top 333a. Furthermore, the white diffuse reflection can be removed. Plate, so that the top portion 333a itself has a white diffusion characteristic.

In this embodiment, as shown in Figs. 6 and 7, the color CCD 401 and the lens 402 are tilted with respect to the wafer stack. In this regard, as shown in FIG. 8 ′, the CCD 401 and the lens 402 may be arranged parallel to the wafer Wm. FIG. 8 is a diagram showing a modified example of the arrangement of the residual film monitor and the optical system. In this embodiment, compared with the case of FIG. 7, although there is a possibility that the image may be deformed or the surrounding area may be blurred by obliquely seeing the wafer, but if the I image is at the focal depth 0 of the photographic lens 402, Then you can use it for this purpose in a problematic way. In the case of this embodiment, there is an advantage that a low-priced, conventional CCD camera can be used as the color CCD 401 and the lens 402. As can be understood from the above description, in this embodiment, the white light source 400 and the white diffuse reflection plate 403 'constitute an illuminating section that illuminates the wafer wm with illumination light containing a plurality of wavelength components. The photographic lens 402 and the color CCD 401 are image information acquisition units for obtaining color image information of a bright field image of approximately the entire area of the polished surface of the wafer axis illuminated by the illumination light. Further, in this embodiment, since a two-dimensional color CCD 401 is used, it is possible to obtain the color image information of the bright field image of substantially the entire area of the polished surface of the wafer Wm together in a qualitative manner. In contrast, for example, instead of the two-dimensional color 31 200404643 CCD401 ', a one-dimensional color CCD 401 is used, and the linear field of view is set so as to reach from the center of the wafer Wm to the vicinity of the outer periphery. Wm is rotated together, so that the linear field of view scans the entire wafer Wm, and is related to the rotation position of the wafer Wm (this position can be detected by a rotary encoder, for example), so as to gradually obtain color image information. The processing unit 405 stores the color image information obtained by the color CCD 40 as an information in an internal memory (not shown), and processes the color image information to obtain a polishing residual film representing the polishing surface of the wafer Wm. I test results of the situation. The research results of the present inventors have found that, according to the condition of the polishing residual film on the polishing surface of the wafer Wm, the relative relationship between the intensity of the plural color components of the color shadow Jun Shida & m ~ m Bei Xun will change, Discovery: You can learn about wafers from changes in relative relationships

The grinding surface of Wm has been polished to d lL _ w, ... ^ Money boat condition. This should be due to the interference of the wavelength of the light reflected by the film material or the thinning of the film. In addition, as described below, these matters are confirmed by inspection. The inventor obtained each of the M series, fish > 5 ^ x shown in Fig. 10 and u by using the Cu-CMP mushroom making method related to Fig. 3 and Fig. 3 only. Prepare a plurality of wafers, and then proceed to the predetermined semiconductor chip spear. 'Proceed to the next step-Cu-CMP process as shown in Figure 3 (a)] P? This 1 grinding process P1 and second grinding Processing P2. After the processing of a certain part of the crystal is finished, the process from the step 9 to the step S10 in FIG. 4 is ended, and then the grinding process of the second brother is continued to be in a state where there is a large amount of residual copper. On the other side, 疋 Shouma formed no g | ... For the other parts of the wafer, go to step S10 in FIG. 4 and the girl hits U and lights up to f ′. There is copper makeup on the part. can. To the two crystals, respectively, II & t $ Magic state. First, the same method as shown in Figure 6 to obtain color 200404643 color image information. In order to reduce the influence of quantization errors, a well-known smoothing process (smoothing process) is performed on the color image of each wafer separately. After that, regarding the smooth processed color image of each wafer, a row of pixel rows corresponding to the position on the line of the two wafers corresponding to each other approximately, and the intensity value of G and the intensity of R of each pixel of the pixel row are extracted. And the difference (R_G) between the intensity value of G (green) and the intensity value of R (red) is calculated for each pixel. FIG. 10 is a graph showing information on a wafer without copper residue. The horizontal axis is the pixel position in the pixel row. The vertical axis is the intensity value. The intensity value G and k intensity of each pixel are plotted. Value, and difference (R_G). Figure u is a graph showing the information of the wafer with copper residues. The horizontal axis is the pixel position in the pixel row, and the vertical axis is the intensity value. And difference (R_G). In Fig. 10 and Fig. U, corresponding to the horizontal axis, the areas without copper residues, the areas with thin copper residues, and the areas with thick copper residues are shown together. The "difference (r_g)" is a value indicating the relative relationship between the intensity value of G and the intensity value of R. As can be seen from Fig. 10 and Fig. 11, the intensity value of R in a region without copper residue and a region with thick copper residue is greater than that of G. On the other hand, the area of residual copper, on the other hand, is 6 stronger than the area without residual copper and the area with thick residual copper. The difference (r_g) is positive (including zero in this spoon). On the other hand, For areas with thin residual copper, the difference (RG) is: negative. If it is wrong, there is a thin residual steel at the portion where i (R_G) becomes negative, and the presence or absence of thin residual copper at that portion can be known. On the other hand, if the difference (lG) is positive, it is impossible to distinguish the region or the region with thick residual copper. However,…, the problem that the problem is aimed at is the slave copper produced locally by 33 404643 grinding, so the film thickness of copper changes as ancient, it can be said that the thickness of the copper is thick, and it is like a knife. There must be thin residual steel around%. It is not a problem to know whether there is residual steel in the whole wafer area or the area where the mines are located, and the area of the helmet is copper. It will not bring any obstacles, because the difference ([G) can be used to know that the thin residual copper can be known by the ratio (R / G). " Fig. 9 illustrates an example of the operation of the processing unit of the residual film monitoring device 4o ## of the optical system; the polishing table 320M is set to 400. The objective is to set the optical system to the polishing △ 'to indicate the residual film of the potential 320 A schematic flowchart of an example of the operation of the monitoring unit. The process of setting 400 does not explain the installation of the optical system in the polishing A 3 ^ n measuring device _, but the setting of the optical system; polishing ^ The residual film monitoring device of the monitor 320 is 400 mm. The current polishing residual film is the same copper residual film as the above-mentioned example, so it is easy to understand. The inspection processing unit 405 starts operation, and then calls g

n Then the number of leaves from the color image of the CCD401 color image I by the image of the wafer image of the poor information ~ the total number of million sentence pixels produced by Xitian Yu, to obtain the horizontal coordinate of the largest pixel is max X, and K step S31) . ... The maximum coordinate of the pixel is _ t 隹 processing unit 405, in order to reduce the influence of the quantization error, to perform a well-known smoothing (ten / monthly processing) on the Japanese yen image (step S32). Although this treatment is better, it is not a macro, so it is not necessary. In addition, in this embodiment, the photographic lens technique 'can't substantially blur the image of the wafer wm 200404643 and can be imaged on the imaging surface of the color CCD401, but the MTF of the image on the wafer axis is required. Deletion of high spatial frequencies enables the imaging on the imaging surface of the color CCD 401 in a way that produces blurring, even if no step processing is performed, which can reduce the impact of quantization errors. Next, the processing unit 405 extracts the intensity values of the R component θ) Ir (χ, γ) and the G component (intensity value of G) Ig (X, y) of the wafer image subjected to the step S32 (Step S33). ). However, βχ "χχ, < max Y 〇 1

Then, the processing unit 405 calculates the difference I (χ, 0 = ι (X, y)-Ig (X, y)) for each pixel (step S34). Next, the processing unit 4Q5 uses the calculated value in step S34. The difference is positive 2 '(including zero) or negative, so that each pixel is binarized to obtain a ⑷: image (step S35). An example j of the binarized image obtained in step S35 is not shown in FIG. 12. Fig. 12 (a) shows that there is no polishing residual film on the wafer (here

: Film) 'Fig. 12 (b) shows a case where thin wafers are partially thinned (' Lang film). In FIG. 12 (a) and (b), the difference I (χ, y) of the difference between S and S35 is a positive pixel region, and the dense regions 501 to 504 are the difference I (χ) calculated in step S35. , Y) is a region of j and a thin polishing residual film. The ',', and image 'processing unit 4G5 determines whether there is a wafer on the wafer based on the negative pixel region obtained in step S35 =). Even if the binarized image obtained in step S35 is not used, (: the same determination is made for each pixel obtained in ^ S34. I (xy), although it can be ϋ 35 200404643, then the processing unit 405, extracts the thin The position of the residual copper, that is, the position of the negative heart, y) (X, y) (step S37). Finally, the processing unit 405 outputs the monitoring result and performs a series of processing. Specifically, in step Na, the processing department will output the position of the thin residual copper (corresponding to the information about the position of the residual steel) of the polished residual film obtained in step S36, as the monitoring result output. To the aforementioned control section. Further, processing is performed, and the color image obtained from the color CCD 4101 and the binary image 'obtained in step S35 are displayed on the display section 406' and stored in the memory section. Also, although not shown in the drawing, the information stored in the memory department is read out by the computer. Here, if the optical system is provided in the processing section 405 of the residual film monitoring device 400 of the polishing table 32, the polishing residual film monitored by the residual film monitoring device 400 is a barrier layer 52 such as TiN or TaN. Therefore, with this material, whether to obtain the monitoring result from the color image obtained from the color CCD401 according to the relative relationship of any color of at least 2 =, it is appropriate to decide. Next, an embodiment of a method for manufacturing a semiconductor device according to the present invention will be described. FIG. 13 is a flowchart showing a process of manufacturing a semiconductor device. To start the half-body device process, first in step S200, select the appropriate processing step from steps S201 to 204 listed below. Depending on the selection, proceed to any of steps S201 to 204. * ”Step S201 is an oxidation step for oxidizing the surface of Shixi wafer. Step S202 is a cvd step of forming an insulating film on the surface of Shixi wafer by CVD or the like. Steps such as ore formation, electrode formation, and electrode formation 36 200404643. Step S2G4 is a wafer implantation ion implantation step. In the CVD step (step, step 202) or the electrode formation step (step ca ' Proceed to step 209 'determine whether to perform the CMP step. If not, proceed to step 206' and if it is necessary, proceed to step m. Step coffee system 'Step' In this step, the interlayer insulating film is performed using the polishing device of the present invention. : Tanning, or the formation of damascene by polishing the metal film on the surface of the semiconductor element, etc., and then proceed to step S 206 after the step (step S205) or the oxidation step (step S201). Step § 2 06; W, b, Shao Na WUb is a first shadowing step. In this step, a silicon wafer is coated with a photoresist, and the circuit pattern of the Shixi wafer is formed by the exposure of an exposure device, and Develop the wafer in seconds after exposure Then the next step is to tear the surname engraving step, and the part other than the developed photoresist image is cut with the surname, and the photoresist is peeled off after the fall. The removed photoresist is removed and the unnecessary photoresist is removed. Whether all the required steps have been completed. If Shangcheng and J return to step 200, repeat the previous steps to form a circuit pattern on the Shixi wafer. If it is determined in step 208 that the entire steps have been completed, then the process ends. The manufacturing method of the semiconductor device uses the polishing device of the present invention in the CMP step, thereby improving the processing accuracy of the CMP step. Thereby, it is possible to manufacture a semiconductor device with less variation than the conventional semiconductor device manufacturing method. In addition, the semiconductor device of the present invention The semiconductor device manufactured by the manufacturing method has a 'yield rate' and is a stable semiconductor device with low performance degradation (produced due to excessive polishing). In addition, the present invention can also be used in the CMP step of a semiconductor element manufacturing process other than the semiconductor device manufacturing process described above. The grinding device can also achieve processing with less variation and less performance degradation. 37 200404643 & This is the description of each aspect of the present invention. The embodiments and the modifications of the invention are not limited to these. For example, the polishing device of the present invention is not limited to the aforementioned residual film monitoring device. ⑽ "D device 'A" The above-mentioned embodiment is not limited to this The invented residual film monitoring moon dagger is installed in the grinding device of the present invention for in-line monitoring, but the invented residual film monitoring device can also be monitored in off-line. As explained above, according to the present invention, Provided is a residue monitoring device capable of appropriately monitoring the condition of the polishing residue film over the entire area of the polishing surface of the object to be polished or a wide area. In addition, according to the present invention, it is possible to provide a polishing device with high yield and preventing excessive grinding. That is, according to the present invention, it is possible to provide a semiconductor element manufacturing method capable of manufacturing a stable semiconductor element with improved yield and less product variation, and a semiconductor element with lower cost and less product variation than the conventional semiconductor element manufacturing method. [Brief description of the drawings] Lu (1) Schematic part Fig. 1 'is a schematic plan view schematically showing a grinding apparatus according to an embodiment of the present invention. Fig. 2 'is a schematic plan view showing a wafer processing condition of the polishing apparatus shown in Fig. 1. Fig. 3 is a schematic cross-sectional view schematically showing a semiconductor wafer polished by the grinding device shown in Fig. 丨, and Fig. 3 (a) shows a crystal 38 before the grinding process. Fig. 3 (b) shows Grinding and adding refers to the state of the wafer after the patterning process shown in FIG. 1. The general flow of the operation of the grinding device Figure 5 'is a schematic plan view showing the other parts of the grinding device and the main parts of the grinding device in the factory. Residual film monitoring of the polishing device shown in Fig. 6 is a schematic configuration diagram showing the device used in the figure. Optical system configuration of the monitoring device Fig. 7 is a diagram showing the residual film shown in Fig. 1 by optical expansion. Fig. 8 'is a diagram showing a modified example of the configuration of the prior system of the residual film monitoring device. FIG. 9 ′ is a schematic flowchart showing an example of the operation of the AA4 _ all Chinese monitor device that is not found in Qian Xi in FIG. 1. Figure 10 is a graph showing experimental information when copper residue is not present. Figure η shows experimental information in the presence of residual copper. Fig. 12 is an example of a processing image obtained from the processing section of the residual film monitoring device not shown in Fig. 1 by ^ 口 i. Fig. 12 (a) shows the absence of residual copper (Status, figure) acryl) ^ Q 2 (b) represents the state when residual steel exists. FIG. 13 is a flowchart showing a process of manufacturing a semiconductor device. (II) Symbols of component S 205 CMP Step VI, V2, V3, V4 Chuck W wafer (Wd: 1 wafer is not added, p p yen print, processed wafer, substrate) 1 Grinding device 彡 39 200404643 310, 320, 330 Grinding table 340, 346, 347 Indexing table 350 Transfer table 370 Third transfer robot 371 Swing arm 372 Rotating arm 375a A clamp (second holder) 375b B clamp (first holder)

401 color CCD 402 photography lens 403 white diffuse reflection plate 404 white light source for lighting 405 processing section 406 display section 407 memory section

40

Claims (1)

200404643 The scope of patent application: 1 · A residual film monitoring device that directly removes the condition of the polishing residual film over a wide area of the polishing surface of the object to be polished. It is characterized by: The acquisition unit is color image information of the wild image of the entire surface or a wide area of the surface of the researched and discarded master X 1 knife rice research object illuminated by illumination light containing a plurality of wavelengths with cool &p; And the% processing unit obtains the monitoring result indicating the condition of the polishing residual film based on the color image information. 2 · If the scope of patent application is 箆 1 τ5 + $ + t, the residual film monitoring device of item 1 of the figure, wherein the monitoring result includes the presence or absence of the polishing residual film. μ 3. If the residual film monitoring of item 1 or 2 of the scope of patent application, the 'this monitoring result' includes the correlation of the location of the residual film of grinding: 2 4. If the residual of item 1 or 2 of the scope of patent application Film monitoring and device, wherein the bright field image is a blurred image. , 5 · If the scope of patent application is the first, the image information acquisition is obtained in part. 6 · If the scope of patent application is the first one, the image information acquisition unit obtains it step by step. Residual film monitoring of item 2 or item 2 is essentially the residual image monitoring of item 2 or item 2 of the color image information. Scanning the color image information item by item 7. If item 1 or In the residual film monitoring of the second item, the side image information acquisition section acquires the color image information, ρ ... the scan of the object to be rotated. ^ Companion 8. If the residual film monitoring installation No. 1IM or No. 2 of the scope of patent application 41 200404643 Among them, the processing unit is, has a computing unit, regarding the image that is not included in the color image information or applies a predetermined The processed image will calculate a value 'representing the relative relationship between the intensity values of a plurality of colors at substantially the same position within the image' according to each image position; and a determination unit based on the value indicating the relative relationship at each image position To determine the condition of the polishing residual film. —9. The residual film monitoring device according to item 8 of the scope of patent application, wherein the predetermined treatment is smooth processing. -杳 !!. According to the residual film monitoring device of the scope of patent application No. 8, wherein: Table :: The value of a plurality of face-to-face relationship in the same position in the same image 'includes substantially the same position in the same image The difference or ratio of the intensity values of the two colors. The color film "·· Residual film monitor of the tenth item in the patent scope, the judgment section judges the grinding residue based on the difference, the presence or absence of the position in the image within the range of the armor hh seven daggers and the mu Membrane 1 2. Residual film monitoring device such as the scope of Shen Xiang patent, the judgment department, according to the difference or eight, # 料 讲 府, the value of the position within the image within the existing trunk Pay the relevant information on the location of the residual film of the β-hai grinding. 13 · If you request the item of the patent scope item # 2 or item 2, it is equipped with a display section to link the _ Ge Yu Huang measurement device, ^ show the color image information Show at least one of the following humorous images and processed images after this application. Image and 14. If the scope of the application for a patent] item or it is equipped with a memory section, use ^, no-monitoring device, to recall the Color image Jun Shen Cao & _ For at least ― 彳, ° not image and 15. in the scope of the patent application] or 2. in the image after the application of this application, Beimingyu monitoring device, 42 200404643 which The object to be polished is a semiconductor wafer. 16.—A polishing device, In a state where an abrasive is interposed between the abrasive and the object to be polished, the object to be polished is polished by applying a load between the object and the object to be polished and relatively moving, and is characterized in that: The film monitoring device is used to monitor the polishing residual film condition on the entire or a wide area of the polishing surface of the object to be polished. 17 · If the polishing device of the patent application No. 16 is equipped with a research device, The grinding condition monitoring device is used to monitor the grinding condition of the object to be ground during grinding. 18 · —A kind of grinding device, which is provided with at least one grinding area, and in the state where at least ^ grinding areas interpose an abrasive between the grinding body and the object to be ground, A load is applied between the grinding objects and the relative movement is performed to grind the object to be ground, which is characterized in that: at least one of the at least one grinding area is set at the same time: a grinding condition monitoring device, A Ganba grinding Monitoring of the condition of the object to be polished, and residual film monitoring device Abrasive residual film condition in a wide area. 、, 1 to 1 of this grinding • If the grinding device of the 18th scope of the patent application is applied, there are at least 2 grinding zones, the object to be ground is sequentially ground in the grinding zone, and the residual film is monitored The clothes are installed in the grinding device in the grinding zone after the object to be ground is ninth + ^ 2 装置 Grinding device in any one of the areas 〇7 to 919, as described in the patent application Among them, 43 200404643 the residual film monitoring device monitors the condition of the polishing residual film in-line after the grinding of the object to be ground is stopped according to the monitoring result of the polishing condition monitoring device; the polishing device is based on the residual film The monitoring results of the monitoring device perform different actions. 21. The polishing device according to item 20 of the patent application scope, wherein if the monitoring result of the residual film monitoring device indicates that the polishing residual film is present, the object to be polished is ground to reduce or disappear the polishing residual film. 22. The grinding device according to any one of claims 16 to 19 of the scope of application for a patent, wherein the money film monitoring device f is to monitor the condition of the grinding residual film while keeping the object to be ground at the grinding position. 23 · If the grinding device of any of the items 16 to 19 of the scope of patent application, ", / 玟 film |", the device is in a state in which the grinding body is retracted from directly above the object to be ground, This polishing residual film condition. 24. If the grinding device of any one of the 16th to 19th of the scope of patent application, the money film monitoring device is the scope of patent application? Residual film monitoring device for any of 5 workers. 、 / 5 · If the grinding device of the 24th scope of the application for a patent, wherein the illumination light passes through a predetermined area on the top of the grinding device or a predetermined area of a component provided at the top, or from a predetermined area on the top or A predetermined area of a member located near the top emits, illuminating the entire area or a wide area of the surface of the object to be ground. 26. The polishing device according to any one of claims 16 to 19, wherein the object to be polished is a semiconductor wafer. 200404643 2 7. A method for manufacturing a semiconductor device, characterized in that it comprises a step of flattening the surface of a semiconductor wafer using a polishing device according to any one of claims 16 to 26 of the scope of patent application. 28. A semiconductor element, characterized in that it is manufactured by a method for manufacturing a semiconductor element according to item 27 of the scope of patent application. Pick up, schema: Like the next page 45