200402483 玖、發明說明： 【發明所屬之技術領域】 本發明為關於將金屬電鍍於基材上，藉 構溢出之方法。 【先前技術】 將尺寸為小於四分之一微米之特徵結構 與下一代積體電路製造製程所需之基礎技術 中，舉例言之，超大型積體型裝置，換言之 含超過百萬個邏輯閘之積體電路的裝置，位 心之複數層導線一般係藉以導電材料，舉例 所填充之具高深寬比的導線特徵結構形成。 技術，舉例言之，化學氣相沉積（CVD)與！ (PVD) ’已用來填充這些導線特徵結構。但 漸縮小且高深比日漸增加，要經由傳統金屬 空洞導線特徵結構填充已是日漸困難。因為 出現數種可行電鍍技術製程，舉例言之，電^ 與無電流電鍍用來於積體電路製造製程中填 一微米之高深寬比導體特徵結構。 在電化學電鍍製程中，舉例言之，向基 成之小於四分之一微米高深寬比特徵結構可 料，舉例言之銅，有效率的加以填充。電化 般為兩階段製程’其中首先於基材之表面特 種晶層’之後基材之表面特徵結構暴露於電 此降低特徵結 金屬化為目前 。在特定装置 即至少包含内 於這些裴置核 吕之銅或紹， 傳統上，沉積 物理氣相沉積 當導線尺寸曰 化技術達到無 上述原因，已 二學電鍍（ECP) 充小於四分之 材表面内部形 以使用導體材 學電鍍製程一 徵結構上形成 解質溶液中， 3 以傳統電鍍製程進行特徵 般包含於特徵結構1〇〇沉 續約20秒。上述共形層 以充分填充特徵結構1〇( 一為填充後，次微米特徵 換言之係指特徵結構間 充1 0 4時出現的加速特徵 結構成長現象一般會持續 此會產生不平坦的基材表 換言之於填充特徵結構上 200402483 在此同時，電壓 之陽極間。電Μ 時施加於基材與位於電解質溶 子。因此，施加質溶液一般富含可電鍍於基材表面 於種晶層。 的電壓偏壓可迫使離子離開電解溶液 植古彻 π孜藝）繪示 填充製程。僂έ 傳統電錢填充一 形層1〇2，上、π -般接續由下往上：：般持 於電化學電鍍製 製程的挑戰之 1〇〇表面可能私 了此較區域為高, 域，因為在進行 丁田下往上填 成長速率，與因為加迷特徵 徵結構填充完成之後，故因 局導致溢出106現象發生， 增南區域。 之後以製程移除溢出，舉例言之平坦化製程，其 餘金屬會由全部基材表面移除以形成平坦、平面表面 過平坦化製程後’ f質上並不平坦的基材表面佈局可 導致基材缺陷，舉例言之多餘的切變且不相容於非_ 式移除製程，舉例g之電拋光與化學溶解。因此，需 展設備與方法減低特徵結構溢出現象。 【發明内容】 本發明之八體實施例為關於在基材上電鍍金屬 液中 之離 電鍍 結構 積共 102 0關 結構 的區 結構 到特 面佈 出現 中多 〇經 能會 磨損 要發 的方 4 200402483 法。該方法一般包含以將溝填溶液中的金屬離子電鍍於基 材上以充分填充基材上特徵結構，並藉調理溶液調理基材 的方式，於完成填充特徵結構前降低特徵結構中電鍍活 動。 本發明具體實施例更包含於基材上電鍍金屬的方法。 該方法一般包含以溝填溶液中的金屬離子充分將特徵結構 電鍍於基材上，以調理溶液浸洗基材以使特徵結構中的電 鍍活動充分停止，之後並可由塊狀填充溶液中之金屬離子 對基材加以電鍍。 本發明具體實施例更包含於含電鍍溶液之電鍍槽中處 理基材，施加電流於電鍍槽，藉由電鍍將填充溶液中的金 屬離子電鍍於基材，以充分填充基材中的特徵結構，將供 應於電鍍槽之電流停止充分足夠時間以使電鍍溶液中的擴 散現象達到平衡，與提供電流於電鍍槽以在基材上得到所 需電鍍層厚度。 本發明具體實施例更包含於種晶層沉積後，使用至少 包含遏抑劑之調理溶液處理基材以充分停止在基材中特徵 結構的共形沉積，且以電鍍溶液中之金屬離子於基材上進 行電鍍反應。 【實施方式】 較佳具體實施例之詳細描述 第2圖為繪示電鍍系統200之透視圖，包含大型主機 214、電鍍溶液補充系統220，與控制系統222。大型主機 200402483 一般包含熱鍛鍊腔211、進料站21〇、旋轉式洗滌乾燥站 212、與複數個製程站218。進料站21〇 一般包含一咬更 多基材卡匣接收區域224、一般稱為進料機械、一或更多 進料站移轉機器人228、與至少一基材對準室23〇。每一 製程站218包含一或更多製程槽24(^ 控制系統222可為規劃為可作為與多種系統元件間連 接之介面與提供控制訊號的可程式化微處理器。電鍍溶液 補充系統220為安置於電鍍系統200鄰接處，並與製程槽 24〇保持流體連通，以使電鍍溶液能循環至槽240。 第3圖為繪示本發明之電鍍槽實施例之部分橫截面視 圖。上述電鍍槽240實施例可以應用於下述所有步驟中， 舉例言之聚合物處理，溝填、塊狀填充。此外，其他為一 般相關技藝人士所熟知的電鍍槽亦可用於上述任一步驟 中。電鍍槽240 —般至少包含容器本體3 42，且該容器本 體上部至少包含開口以作為容納與支撐安置於中樞位置之 上蓋344。容器本體342可使用電氣絕緣材料製造，上述 材料舉例言之，可為塑膠、鐵弗龍、陶瓷。上蓋344係作 為上部蓋，且於其下部包含基材支撐表面346。基材348 與基材支撐表面346為平行鄰接關係，姐可以藉由傳統基 材吸附方法、舉例言之真空吸附保持於該方向。容器本體 3 42可為圓枉形以在一端容納一般屬圓形之基材348。但 基材亦可為其他形狀。 電鍍溶液進口 350可以置於容器本體342底部。電鍍 溶液可以藉連接進口 350之適當幫浦351抽入容器本體 200402483 342 < 基材 可以 中， 一般 溶液 354 金屬 性陶 性非 溶液 金屬 364 343 質上 流出 溶液 通道 一般 器本 基材 邊凸 置表 /合液可向上朝基材348方向流入容器本體342以與 暴露沉積表面3 54接觸。舉例言之，消耗性陽極 置於容器本體3 42中，且規畫為可溶解於電鍍溶液 以提供可沉積於基材表面348之金屬粒子。陽極356 不會延伸至容器本體342之全部寬度，因此容許電鑛 於陽極外表面3 56與容器本體342内表面與沉積表面 間流動。陽極3 5 6亦可選擇為包含電極與使消耗性之 粒子為包裝於具液體滲透性之薄膜中，舉例言之多孔 曼板’以使金屬離子由電鍍溶液沉積於基材上。多孔 消耗陽極亦可以置於容器本體3 4 2中，故可使電鍍 通過 仁Μ包含非消耗性陽極，電鐘溶液可能需包含 粒子源以持續補充沉積於基材3 4 8上之金屬離子。 容器本體3 4 2 —般包含以陰極接觸環3 52的肩部 與上端結合之出口溝35 8。溝35 —般為通向環狀堰 ’上述堪係與基材安置表面368、沉積表面354為實 同平面（或略·高）。堰343所在位置係確保當電鍍溶液 出口溝358與堰3 43上方時，沉積表面354為與電鍍 -π 一 u g稚数禋於录面形成之異g 36〇固^於蓋344之基材支撑表面346,其中通道36 為以一端與真空幫浦(未繪出)連接。位於蓋344與; 體342間的陰極接觸環352可與電源349連接以提4 348能源。接觸環352 一般具有部分通過蓋安置的f 緣362、與堪343共形之傾斜肩部3“、與内基们 面368以定義沉積表面354直徑。肩部364的形式; 200402483 使内基材安置表面368為位於凸緣362下方。 排可使沉積表面3 5 4在上述電鍍溶液流入出口 電鍍溶液接觸。但如上所述，第1圖中接觸環 離本發明範圍之前提下可具有變化。因此肩部 可以改變或肩部 364可以一併捨棄使接觸環 面。使用平面設計時，接觸環3 5 2、容器本體 蓋344之間可加以密封，以在其間形成流體密 基材安置表面368，較佳為於基材348週 朝向以輻射方向以最短距離延伸，較佳為使其 須足夠提供與位於基材沉積表面3 54上之金屬 電氣接觸。精確的基材安置表面368向内輻射 因不同應用而不同。但一般該距離為最小化， 積表面354暴露於電鍍溶液中。在範例具體實 例言之，安置表面368之輻射方向寬度，由基 算起，可為約2公厘至約5公厘間。 操作接觸環3 52時，係以負電荷充電以作 規劃為與基材3 48有電氣上連通。因此當電鍍 材表面354、電鍍溶液中的離子會為表面354 所吸引。之後離子電鍍於表面3 5 4並形成所需 陽極356與陰極接觸環352，亦可用輔助電極 積表面354上電場形狀。輔助電極367為通過笔 置於廢棄渠道369旁。將輔助電極367安置於扇 旁，可使電極3 67能於製程中保持與電鍍溶液 電場。 上述空間安 溝3 5 8前與 設計在不背 364的角度 為實質上平 342與/或 封。 界邊緣下方 最短，但必 種晶層保持 延伸距離會 以使最大沉 施例中，舉 材3 4 8邊緣 為陰極’並 溶液流經基 上的負電何 覆膜。除了 3 6 7控制沉 器本體342 棄渠道369 接觸與影響 8 200402483 基材3 4 8 —般包含小規模，舉例言之， 微米之稠密特徵結構集束。這些特徵結構一 深且被一般為寬數十微米區域，換言之非圖 區隔。本發明之具體實施例一般包含種晶層 或更多金屬沉積步驟、與平坦化步驟。金屬 溝填步驟與塊狀填充步驟。溝填步驟一般為 時間以利用本技藝中眾所皆知之由下至上填 充基材特徵結構。塊狀填充步驟一般接續溝 並持續對基材表面電鍍到所需程度。 本發明具體實施例一般係使用至少包含 克/升至約1 〇 〇克/升硫酸銅，濃度介於約5 克/升之酸與濃度介於約1〇ρριη至約200ppm 舉例言之氯之銅電鍍溶液。酸一般可為硫g 衍生物。除了硫酸銅、電鍍溶液一般包含其 言之I硼酸銅、葡萄糖酸銅、胺基續酸銅、 磷酸銅、氣化銅或氰化銅。 電錢溶液可更包含一或多種添加物。 為，舉例&之，調平劑、抑制劑、遏抑劑、 劑與其他本技藝中所熟知之添加物，一般為 進行電链基材表面之有機材料。有效的遏抑 乙醚、舉例言之聚乙二醇或其他聚合物、舉 丙烧’上述物質可為基材表面所吸附，減缓 沉積速率。有效的促進劑一般包含硫化物或 例言之雙（3-磺基丙基）二硫化物，可與遏抑 小於四分之一 般為約1微米 案化區域，所 沉積步驟，一 沉積步驟包含 持續足夠久的 充技術充分填 填步驟之後， 濃度介於約5 克/升至約200 之鹵素離子’ I、磷酸與/或 他銅鹽，舉例 石黃酸化銅、焦 上述添加物可 增亮劑、促進 可吸附於所欲 劑一般包含聚 例言之聚環氧 吸附表面上銅 二硫化物，舉 劑競爭吸附位 置，加速吸附區域 曱酸鈉與亞硫酸鈉 中，添加物會於基 補充。因數種添加 與底部表面濃度之 率。理想上，這些電 以滿足由下到上填 添加物組成以於特 一般，本發明 聚合物處理步驟一 之調理溶液，以降 包含任何可抑制電 物組合、舉例言之 子水以將特徵結構 溝填步驟與塊 並使用不同電鑛溶 與遏抑劑，塊狀填 外，當基材由溝填 理步驟。當基材由 洗。聚合物處理亦 槽進行。另可選擇 高濃度遏抑劑溶液 驟。 上鋼沉積速率。有 ，其可抑制基材上 材表面消耗，但可 物擴散速率的不同 差異，因此導致特 鍍速率需在特徵結 充步驟。因此，電 徵結構進行無空洞 之具體實施例尚包 般係使用聚合物調 低特徵結構上的電 錢活動活性包含聚 遏抑劑，調理溶液 開口上局部高濃度 狀填充步驟可發生 液。舉例言之，溝 充〉谷液則一般包含 槽轉移到塊狀填充 溝填充槽移除時， 可選擇於含調理溶 之具體實施例為於 ，因此可以不必使 效抑制劑一般包含 銅的沉積。電鍍過 藉電鍍溶液加以持 會導致特徵結構頂 徵結構上不同電鑛 構底部有較快速率 鑛溶液中需有適當 填充。 含聚合物處理步驟 理基材表面，舉例 鍍活動。調理溶液 乙烯與聚丙烯之聚 亦可選擇性包含去 促進劑沖掉。 於不同製程槽240 填溶液可包含促進 調平劑與促進劑。 槽，可進行聚合物 可以調理溶劑加以 劑之中間聚合物處 塊狀填充槽至少包 用分離聚合物處理 溝填步驟與塊狀填充步驟亦可選擇交替於相同製程 苯 程 續 部 速 的 古 可 合 離 劑 此 處 浸 理 含 步 槽 10 200402483 240 後， 少需 100 之反 充特 低特 徵結 促進 之後 劑反 體積 入與 基材 電鍍 例可 預處 時， 於電 驟可 調理 擇為 進行。聚合物處理步驟可至少包含在溝埋 將施加於電鍍溶 #真步驟完成 狀您電流關閉，無電漭 .足使電鍍溶液擴 時間區間至 饮彍政達到平衡，舉例t之， 秒。特徵結構之沉積製程一般可㈣約-秒到約 應物擴散現象控制…b，擴散、特徵結構上 徵結構時相當明顯。減低特徵結構中4電錄與填 徵結構中的電鍍活動 / π物擴散可降 構中的電鎮活動，因此可降低 進齊1不再主導特 劑區域範圍。 —1…構上局部高濃度 當溝填充步驟完成時’可選擇將電鍍溶 基材以調理溶劑浸洗充分時間已將特徵結構：的二 應充分停止。基材可於分離浸洗槽中加的= 不大，槽亦可選擇為於同樣槽 , 右槽 >又洗。之後槽可以加 溝填與調理溶液不同之塊狀填充溶液。 雖然不希望為理論所限制，但一 散相彳a添加物擴散到 表面所需時間會受共形電鐘影 电鍍衫響。因此，為消滅共形 的影響與提供立即由下往上搶 r住上填充，本發明之具體實施 ，或選擇性包含於種晶層牛跡& 日層步驟與金屬電鍍步驟間進行 理步驟。當溝填與塊狀填充步驟間不包含聚合物處理 金屬電鐘步驟-般係持續進行。聚合物預處理步驟可 鑛製程之開端即降低共形沉積現象。聚合物預處理步 包含以富含遏㈣μ之槽中漫洗或浸泡基材的方式 基材表面。槽可與電鍍步驟中所使用的槽相同，或選 分離槽因此基材要轉移到電錢#。 11 200402483 當上述描述為指向本發明之具體實施例，其他或關於 本發明之更進一步具體實施例，可以在不背離本發明之基 本範圍與下述請求項範圍下之裝置中實施。 【圖式簡單說明】200402483 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for electroplating a metal on a substrate and borrowing from the structure. [Previous technology] Among the basic technology required for the next-generation integrated circuit manufacturing process with a feature structure smaller than a quarter micron in size, for example, an ultra-large integrated device, in other words, containing more than one million logic gates For integrated circuit devices, multiple layers of conductors in the center are generally formed by using conductive materials, such as filled conductor structures with high aspect ratios. Technology, for example, chemical vapor deposition (CVD) and! (PVD) 'has been used to fill these wire features. However, it is gradually shrinking and the height-to-depth ratio is gradually increasing. It is becoming increasingly difficult to fill through the characteristic structure of the traditional metal hollow wire. Because there are several feasible electroplating technology processes, for example, electroplating and electroless plating are used to fill a micron-high aspect ratio conductor feature structure in the integrated circuit manufacturing process. In the electrochemical electroplating process, for example, a feature structure with an aspect ratio of less than a quarter of a micron, such as copper, can be efficiently filled. Electrochemical is generally a two-stage process, in which the surface characteristic structure of the substrate is first exposed to electricity after the special seed layer on the surface of the substrate. In a specific device that contains at least copper or copper contained in these cores, traditionally, physical vapor deposition has been used when the size of the wire has reached the above-mentioned reason. The electroplating (ECP) is less than a quarter of the material. The internal shape of the surface is formed into a degrading solution on the structure using a conductive metal plating process. 3 It is included in the characteristic structure for 100 seconds, which is characteristic of the traditional plating process. The above-mentioned conformal layer fully fills the feature structure 10 (one is after the filling, the sub-micron feature in other words refers to the accelerated growth of the feature structure that occurs when the feature structure is filled with 104, which will generally continue to produce an uneven substrate surface. In other words, on the filling feature structure, 200,402,483 At the same time, between the anode of the voltage. Applied to the substrate and the electrolyte lysate at the time of electricity. Therefore, the applied mass solution is generally rich in the voltage that can be plated on the surface of the substrate in the seed layer. Biasing can force ions out of the electrolytic solution (see Fig. 4) to illustrate the filling process.偻 The traditional electric money fills the shaped layer 102, the top and the π-continued from the bottom to the top :: The surface of the 100, which is the challenge of the electrochemical plating process, may be private. This area is higher than the area. After filling the growth rate from the bottom to the top of Ding Tian, and after the filling of the characteristic structure was completed, the phenomenon of overflow 106 occurred due to the bureau, and the area increased to the south. After that, the overflow is removed by a process. For example, the planarization process, the remaining metal will be removed from the entire substrate surface to form a flat surface. After the planarization process is over-planarized, the surface layout of the substrate that is not flat can cause the substrate. Material defects, such as extra shear and incompatible with non-removal processes, such as electropolishing and chemical dissolution. Therefore, it is necessary to develop equipment and methods to reduce the overflow of characteristic structures. [Summary of the Invention] The eight-body embodiment of the present invention relates to a method in which a region structure having a total distance of 10 to 20 points from a plating structure in a metal plating solution on a substrate is exposed to a special surface. 4 200402483 law. The method generally includes plating metal ions in the trench filling solution on the substrate to fully fill the characteristic structure on the substrate, and conditioning the substrate by the conditioning solution, and reducing the plating activity in the characteristic structure before completing the filling of the characteristic structure. A specific embodiment of the present invention further includes a method for electroplating metal on a substrate. The method generally includes fully plating the feature structure on the substrate with metal ions in the trench filling solution, dipping the substrate with the conditioning solution to sufficiently stop the plating activity in the feature structure, and then the metal in the bulk filling solution can be filled. The substrate is plated with ions. The specific embodiment of the present invention further includes processing the substrate in a plating bath containing a plating solution, applying a current to the plating bath, and plating metal ions in the filling solution on the substrate by electroplating to fully fill the characteristic structure in the substrate. Stopping the current supplied to the plating bath for a sufficient time sufficient to balance the diffusion phenomenon in the plating solution, and to provide current to the plating bath to obtain the desired plating layer thickness on the substrate. The specific embodiment of the present invention further comprises, after the seed layer deposition, treating the substrate with a conditioning solution containing at least a suppressor to sufficiently stop the conformal deposition of characteristic structures in the substrate, and using metal ions in the plating solution on the substrate. A plating reaction is performed on the substrate. [Embodiment] Detailed description of the preferred embodiment FIG. 2 is a perspective view showing a plating system 200, including a mainframe 214, a plating solution replenishing system 220, and a control system 222. The mainframe 200402483 generally includes a thermal exercise chamber 211, a feeding station 21, a rotary washing and drying station 212, and a plurality of process stations 218. The feed station 21o generally includes a bite more substrate cassette receiving area 224, commonly referred to as a feed machine, one or more feed station transfer robots 228, and at least one substrate alignment chamber 23o. Each process station 218 includes one or more process tanks 24. The control system 222 can be a programmable microprocessor that can be configured as an interface to various system components and provide control signals. The plating solution replenishment system 220 is It is placed adjacent to the plating system 200 and is in fluid communication with the process tank 24 so that the plating solution can be circulated to the tank 240. Figure 3 is a partial cross-sectional view showing an embodiment of the plating tank of the present invention. The above plating tank The 240 embodiment can be applied to all of the following steps, for example, polymer processing, trench filling, and block filling. In addition, other electroplating tanks that are well known to those skilled in the art can be used in any of the above steps. 240—Contains at least the container body 3 42 at least, and the upper part of the container body includes at least an opening for receiving and supporting the upper cover 344. The container body 342 can be made of electrically insulating materials. For example, the above materials can be plastic , Teflon, ceramics. The upper cover 344 serves as the upper cover, and includes a substrate support surface 346 at the lower portion. The substrate 348 and the substrate support table 346 is a parallel adjacency relationship, and the sister can be held in this direction by traditional substrate adsorption methods, for example, vacuum adsorption. The container body 3 42 can be round-shaped to accommodate a generally circular substrate 348 at one end. The material can also be in other shapes. The plating solution inlet 350 can be placed on the bottom of the container body 342. The plating solution can be drawn into the container body by the appropriate pump 351 connected to the inlet 350 200402483 342 < The substrate can be medium, the general solution 354 is metallic ceramic The solution metal 364 343 flows out of the solution channel in general. The surface of the substrate is convex and the liquid can flow upward into the container body 342 toward the substrate 348 to contact the exposed deposition surface 3 54. For example, the consumable anode is placed on The container body 3 42 is planned to be soluble in the electroplating solution to provide metal particles that can be deposited on the substrate surface 348. The anode 356 does not extend to the full width of the container body 342, and therefore allows electricity ore on the anode outer surface 3 56 flows between the inner surface of the container body 342 and the deposition surface. The anode 3 5 6 can also be selected to include the electrode and the consumable particles as packaging In a liquid-permeable film, for example, a porous Mann plate is used to deposit metal ions on a substrate from a plating solution. A porous consumable anode can also be placed in the container body 3 4 2 so that the plating can pass through the core. For non-consumable anodes, the electric clock solution may need to include a particle source to continuously replenish the metal ions deposited on the substrate 3 4 8. The container body 3 4 2-generally contains an outlet that is connected with the shoulder and upper end of the cathode contact ring 3 52 Ditch 35 8. Ditch 35 is generally a ring-shaped weir. The above-mentioned system is substantially the same plane (or slightly higher) than the substrate placement surface 368 and the deposition surface 354. The location of the weir 343 is to ensure that when the plating solution outlet groove 358 and the weir 3 43 are above, the deposition surface 354 is the same as that of the electroplating -π one ug, formed on the recording surface, and is fixed to the substrate support of the cover 344. Surface 346, in which channel 36 is connected to a vacuum pump (not shown) at one end. A cathode contact ring 352 between the cover 344 and the body 342 can be connected to the power source 349 to extract 4 348 energy. The contact ring 352 generally has an f-edge 362 positioned partially through the cover, an inclined shoulder 3 "conforming to the 343, and an inner surface 368 to define the diameter of the deposition surface 354. The form of the shoulder 364; 200402483 makes the inner substrate The placement surface 368 is located below the flange 362. The row can contact the deposition surface 3 5 4 before the above-mentioned plating solution flows into the outlet plating solution. However, as mentioned above, the contact ring in FIG. 1 may be changed before being lifted out of the scope of the present invention. Therefore, the shoulders can be changed or the shoulders 364 can be discarded together to make the contact ring surface. When using a flat design, the contact ring 3 5 2. The container body cover 344 can be sealed to form a fluid-tight substrate placement surface 368 therebetween. It is preferable to extend the shortest distance in the direction of radiation in the direction of the substrate 348, preferably it must be sufficient to provide electrical contact with the metal on the substrate deposition surface 3 54. The precise substrate placement surface 368 radiates inward It varies with different applications. But generally, the distance is minimized, and the build-up surface 354 is exposed to the plating solution. In the specific example, the width of the radiation direction of the placement surface 368 is calculated from the basis. It can be between about 2 mm and about 5 mm. When the contact ring 3 52 is operated, it is charged with a negative charge for planning to be in electrical communication with the substrate 3 48. Therefore, when the surface of the plating material 354, the plating solution The ions will be attracted by the surface 354. Then the ions are electroplated on the surface 3 5 4 and form the required anode 356 and cathode contact ring 352, or the shape of the electric field on the surface of the auxiliary electrode 354 can be used. The auxiliary electrode 367 is placed in the waste channel 369 by a pen. By placing the auxiliary electrode 367 next to the fan, the electrode 3 67 can maintain the electric field with the plating solution during the manufacturing process. The angle between the space 3 and the front 3 and 8 and the design without the back 364 is substantially flat 342 and / or The distance below the boundary edge is the shortest, but the seed layer must maintain the extension distance so that in the maximum sinking example, the edge of the material 3 4 8 is the cathode, and the solution flows through the negative charge on the substrate. Except for 3 6 7 control Submersible body 342 Abandoned channel 369 Contact and influence 8 200402483 Substrate 3 4 8—Contains small scales in general, for example, micrometer dense clusters of feature structures. These feature structures are deep and are generally tens of microns wide, in other words Non-graph division. The specific embodiments of the present invention generally include a seed layer or more metal deposition steps, and a planarization step. Metal trench filling step and block filling step. The trench filling step is generally time to use this technology It is well known to fill the characteristic structure of the substrate from bottom to top. The bulk filling step generally continues the trench and continues to plate the substrate surface to the desired level. The specific embodiments of the present invention generally use at least grams per liter to about 1 〇 0 g / L copper sulfate, a copper electroplating solution having an acid concentration between about 5 g / L and a concentration between about 10 phl and about 200 ppm, for example, chlorine. The acid may generally be a sulfur g derivative. In addition to copper sulfate, the plating solution generally includes, among others, copper borate, copper gluconate, copper amine acid, copper phosphate, vaporized copper, or copper cyanide. The battery solution may further include one or more additives. For example, leveling agents, inhibitors, suppressors, agents, and other well-known additives in the art are generally organic materials for the surface of electric chain substrates. Effectively inhibiting ether, such as polyethylene glycol or other polymers, such as propylene, can be adsorbed on the surface of the substrate and slow down the deposition rate. Effective accelerators generally include sulfide or bis (3-sulfopropyl) disulfide, which can be suppressed to less than a quarter of the area generally about 1 micron. The deposition step, a deposition step includes a continuous After a sufficient filling step, the halogen ion 'I, phosphoric acid and / or other copper salts having a concentration between about 5 g / l and about 200, such as copper lutein and coke, can be used as brighteners. 3. Promote the adsorption of copper disulfide on the surface of the desired epoxy resin generally including poly-epoxy. The agent competes for the adsorption position and accelerates the adsorption area of sodium sulfonate and sodium sulfite. Factors add to the ratio of the bottom surface concentration. Ideally, these electricity satisfy the bottom-up filling composition. In general, the conditioning solution of the polymer processing step 1 of the present invention, to contain any combination of inhibitable electricity, for example, water, to fill the characteristic structure. The steps and blocks use different electric ore dissolving and suppressing agents, and the blocks are filled outside, when the substrate is filled by the trench. When the substrate is washed. Polymer treatment is also performed in a tank. Alternatively, a high concentration suppressor solution step can be selected. On steel deposition rate. Yes, it can suppress the consumption of the surface of the substrate, but the difference in the diffusion rate of the material, so that the special plating rate needs to be in the feature filling step. Therefore, the concrete embodiment of the electrical structure without voids still includes the use of polymers to reduce the activity of the electronic activity on the characteristic structure, including a poly-inhibitor, and a local high concentration filling step on the opening of the conditioning solution can be liquid. For example, trench filling> valley liquid generally includes groove transfer to block filling groove filling groove removal, which can be selected in the specific embodiment containing conditioning solution, so it is not necessary to make the inhibitor generally contain copper deposition. . After plating, holding the plating solution will result in a faster rate at the bottom of different electrical mineral structures on the characteristic structure. The mineral solution needs to be filled properly. Polymer-containing treatment steps Treat the surface of the substrate, for example plating activity. Conditioning solution Polymerization of ethylene and polypropylene can optionally include depromoting agents to wash off. Filling solutions in different process tanks 240 may include leveling agents and accelerators. The tank can be polymerized. The intermediate polymer at the intermediate polymer can be adjusted. The block-shaped filling tank contains at least the separation polymer treatment. The trench filling step and the block filling step can also be selected from the same process. After the agent leaching here includes step 10 200402483 240, 100 fewer backfills are required. Extra low characteristic junctions are promoted. After the backfilling of the agent and the substrate electroplating example can be pretreated, the electrical adjustment can be selected to perform. The polymer processing step can be included at least in the trench burying. Applying to the electroplating solution. The true step is completed. Your current is turned off without electricity. The electroplating solution is extended to the time interval until the drinking water reaches equilibrium, for example, seconds. The deposition process of the characteristic structure can generally be controlled from about -seconds to about the diffusion of the application ... b, the diffusion and the characteristic structure of the characteristic structure are quite obvious. Reducing the electroplating activity in the recording structure and filling structure in the characteristic structure / π-material diffusion can reduce the electrical ballast activity in the structure, so it can be reduced to 1 and no longer dominate the area of the special agent. —1… Locally high concentration on the structure. When the trench filling step is completed ’, the plating solution substrate can be immersed in the conditioning solvent for a sufficient time. The substrate can be added in the separate dip tank = not large, the tank can also be selected in the same tank, right tank > and washed again. Later, the tank can be filled with a groove-shaped filling solution different from the conditioning solution. Although it is not intended to be limited by theory, the time required for a dispersed phase 添加 a additive to diffuse to the surface will be affected by a conformal electric clock and electroplated shirt. Therefore, in order to eliminate the effect of conformal and provide immediate grabbing from the bottom to the top, the specific implementation of the present invention may be selectively included in the seed layer layer & the layer step and the metal plating step. . When the trench filling and block filling steps do not include polymer processing, the metal bell step-generally continues. The polymer pre-treatment step reduces the phenomenon of conformal deposition at the beginning of the mining process. The polymer pretreatment step involves rinsing or immersing the substrate in a trough rich in containment μ. The grooves can be the same as those used in the plating step, or the separation grooves are selected so the substrate is transferred to the electric money #. 11 200402483 When the above description is directed to a specific embodiment of the present invention, other or further specific embodiments of the present invention can be implemented in a device without departing from the basic scope of the invention and the scope of the following claims. [Schematic description]
關於本發明中上述特徵結構型態可於此加以詳細說 明，上述關於本發明，附於附件之圖示可以作為更特定簡 短描述具體實施例之參考資料。但需注意的，附件圖示只 繪示關於本發明之範例具體實施例，不可被視為限制本發 明之範圍，本發明可包含其他相等之有效具體實施例。 第1 A-1 C圖（先前技藝）繪示傳統電鍍特徵結構填充。 第2圖繪示電鍍系統實施例透視圖。 第3圖為繪示供電鍍金屬於基材上之電鍍槽的部分橫截面 視圖。The above-mentioned characteristic structure types in the present invention can be described in detail here. The above-mentioned diagrams attached to the present invention regarding the present invention can be used as reference materials for more specific and brief description of specific embodiments. However, it should be noted that the attached drawings only show exemplary specific embodiments of the present invention, and should not be regarded as limiting the scope of the present invention. The present invention may include other equivalent effective specific embodiments. Figure 1 A-1 C (previous technique) shows the filling of traditional electroplated features. Figure 2 shows a perspective view of an embodiment of a plating system. Fig. 3 is a partial cross-sectional view showing a plating bath where power is plated on a substrate.
【元件代表符號簡單說明】 特徵結構100 共形層102 由下往上填充104 溢出1 0 6 電鍍系統2 0 0 進料站2 1 0 熱鍛鍊腔2 11 旋轉式洗滌乾燥站212 12 200402483 大型主機214 製程站218 電鍍溶液補充系統220 控制系統222 基材卡匣接收區域224 進料站移轉機器人228 基材對準室230 製程槽240 容器本體342 堰343 上蓋344 基材支撐表面346 基材348 電源349 電鍍溶液進口 350 幫浦3 5 1 接觸環352 沉積表面3 5 4 陽極356 出口溝358 通道360 周邊凸緣362 肩部364 電極3 6 7[Simplified description of component representative symbols] Feature structure 100 Conformal layer 102 Fill from bottom to top 104 Overflow 1 0 6 Electroplating system 2 0 0 Feed station 2 1 0 Hot exercise chamber 2 11 Rotary washing and drying station 212 12 200402483 Mainframe 214 Process station 218 Electroplating solution replenishment system 220 Control system 222 Substrate cassette receiving area 224 Feed station transfer robot 228 Substrate alignment chamber 230 Process tank 240 Container body 342 Weir 343 Upper cover 344 Substrate support surface 346 Substrate 348 Power supply 349 Plating solution inlet 350 Pump 3 5 1 Contact ring 352 Deposition surface 3 5 4 Anode 356 Outlet groove 358 Channel 360 Peripheral flange 362 Shoulder 364 Electrode 3 6 7