TW200304167A - Exposure method and exposure device - Google Patents

Exposure method and exposure device Download PDF

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Publication number
TW200304167A
TW200304167A TW092101776A TW92101776A TW200304167A TW 200304167 A TW200304167 A TW 200304167A TW 092101776 A TW092101776 A TW 092101776A TW 92101776 A TW92101776 A TW 92101776A TW 200304167 A TW200304167 A TW 200304167A
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Taiwan
Prior art keywords
substrate
speed
correction
exposure
driving
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TW092101776A
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Chinese (zh)
Inventor
Tomohiro Katsume
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Nikon Corp
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Publication of TW200304167A publication Critical patent/TW200304167A/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019Calibration
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An exposure device is provided. In an exposure device EX, a mask M and a sensitive plate P move synchronously and a pattern of the mask M is projected onto the sensitive plate P through projection optical systems PL1 - PL5. The exposure device EX comprises the projection optical systems PL1 - PL5, a correction mechanism, a driving device and a control device CONT. The correction mechanism is disposed in the projection optical systems PL1 - PL5 for correcting an image property of the pattern projected on the sensitive plate P. The driving device is used to drive the correction device. The control device CONT sets one of a driving speed and a driving amount to the driving device according to a synchronous moving speed. Therefore, when correcting an image property and scanning and exposing, the pattern can be accurately overlapped at a pre-determined position by performing an accurate correction. As a result, the exposure device performs an accurate exposure process.

Description

200304167200304167

五、發明說明(1) 發明所屬之技術領域 本發明係關於一種曝光方法及曝光裝置,特 9 一面使光罩(mask)與基板以同步移動一面使光罩之於 =Mtern)曝光於基板的一種掃描式之曝光方法及曝《^裝 先前技術 液晶顯示元件或半導體元件等之電子元件係使 上所形成的圖案轉移於感光基板上,由所謂微影餘刻去 (1 i thography)製造。在此微影蝕刻製程所使用/的‘光裝 置,係包括光罩機台(stage)與基板機台,其中,光罩^ 台係載置具有圖案之光罩以二維方式移動,基板機台係 載置感光基板以二維方式移動’使在光罩上所形成之圖^ 案以逐次移動光罩機台及板機台經介投影光學系統投影 曝光於感光基板。對於曝光裝置主要係有總括型曝光裝 置與掃描型曝光裝置之兩種,其中,總括型曝光裝置係 使光罩之圖案全體以同時轉印於感光基板上,掃描型曝 光裝置係一面使光罩機台與基板機台以同步掃描一面使 光罩之圖案連續的轉印於感光基板上。此中,製造液晶 顯示元件時,顯示領域之大型化的要求係以使用掃描型 辱光寒置為主。 電子元件係包含微影蝕刻製程由各製程處理在基板上 使複數圖案以所定之位置關係重疊加以形成,基板係會 由製程處理而變形之場合。例如,基板為液晶顯示元件 用之玻璃基板的場合,會由各製程處理之熱作用而變V. Description of the invention (1) The technical field to which the invention belongs The present invention relates to an exposure method and an exposure device, and the exposure of the mask to the substrate while moving the mask and the substrate synchronously A scanning type exposure method and an electronic component that mounts a prior art liquid crystal display element or a semiconductor element are made by transferring a pattern formed on the photosensitive substrate to a so-called photolithography. The optical device used in this lithography etching process includes a photomask stage and a substrate table, and the photomask ^ stage is a two-dimensional movement of a photomask having a pattern. The stage is mounted on a photosensitive substrate and moved in a two-dimensional manner, so that the pattern formed on the mask is sequentially exposed and exposed on the photosensitive substrate by moving the mask machine and the board machine through a projection optical system. For the exposure apparatus, there are mainly two types of collective exposure apparatus and scanning exposure apparatus. Among them, the collective exposure apparatus enables the entire pattern of the photomask to be transferred onto the photosensitive substrate at the same time, and the scanning exposure apparatus uses one side of the photomask. The machine and the substrate machine synchronously scan one side so that the pattern of the photomask is continuously transferred on the photosensitive substrate. Among them, when manufacturing a liquid crystal display element, the requirement for the enlargement of the display field is mainly a scan type shading device. The electronic device includes a lithographic etching process in which a plurality of patterns are superimposed and formed in a predetermined positional relationship on a substrate by each process, and the substrate is deformed by the process. For example, when the substrate is a glass substrate for a liquid crystal display device, it is changed by the heat of each process.

l〇803pif.ptd 第6頁 200304167 五、發明說明(2) - 形,或者,在玻璃基板上形成金屬層時玻璃基板係具有 似如由金屬層所拉受在面方向之力的作用而變形之場 合。由製程處理而基板變形時,在基板上使圖案重叠之 際,圖案彼此有偏離之場合。於是,先别’在曝光裳置 之投影光學系統設補正機構以補正在基板上所投影之$ 特性,使用此補正機構,一面進行按照基板之非線形變 形之圖案像在基板上的位置或形狀之補正一面進行曝光 處理。即,曝光裝置,係按照基板之非線形變形以補正 機構一面補正位移(shi ft )(像之X軸方向及Y軸方向之位 置誤差)、倍率(SCaling)(像之擴大或縮小誤差)、迴轉 (rotation)(Z轴周圍之迴轉誤差)、直交度(以像之X軸為 基準之Y軸方向之傾倒量)等之像特性,一面使圖案像投 影曝光於基板上。 在此’補正機構係例如可舉設在投影光學系統之平行 平面玻离板’藉由使此平行平面玻璃板以馬達等之驅動 裝置力、匕轉,以補正像特性。然而,在一面使光罩與 ί Ϊ 移動一面經介投影光學系統使圖案投影於^ 光基f之知描型曝光裝置,按照基板之非線性變形,一 正機構一面進行掃描曝光。此時,先前之 闰由馬達之驅動機構以一定速度驅動(迴轉)。 之像特性(像Wj 3板之非線形變形一面補正圖案 圖安傻的;4位置)面進行掃描曝光時,在基板上之 二Ξ。鈥π式圖。在第UA圖,箭頭X1係表示基板之掃描 " ' ' ,圖案像係一面掃描基板一面使驅動機構以l〇803pif.ptd Page 6 200304167 V. Description of the invention (2)-or when the metal layer is formed on the glass substrate, the glass substrate is deformed as if it is pulled by the metal layer in the direction of the surface. Occasion. When the substrate is deformed by the process, when the patterns are overlapped on the substrate, the patterns may deviate from each other. Therefore, don't set up a correction mechanism in the projection optical system of the exposure set to correct the $ characteristics projected on the substrate. Use this correction mechanism to perform the position or shape of the pattern image on the substrate according to the non-linear deformation of the substrate. The correction process is performed on the exposure side. That is, the exposure device is based on the non-linear deformation of the substrate to correct the displacement (shi ft) (positional error in the X-axis and Y-axis directions), SCaling (the expansion or reduction error of the image), rotation (rotation) (rotation error around the Z-axis), orthogonality (the amount of tilt in the Y-axis direction based on the X-axis of the image), etc., while exposing the pattern image on the substrate. The "correction mechanism" may be, for example, a parallel plane glass separation plate provided in the projection optical system. The parallel plane glass plate is driven by a motor or the like to force and dagger to correct the image characteristics. However, on the one side, the photomask and ί are moved, and the pattern is projected on a light-based exposure device via a projection optical system. According to the nonlinear deformation of the substrate, scanning exposure is performed on the positive mechanism side. At this time, the previous 闰 is driven (turned) at a certain speed by the drive mechanism of the motor. The image characteristics (such as the non-linear deformation of the Wj 3 plate, which corrects the pattern on the side); when scanning exposure is performed on the surface, the second surface is on the substrate. “The graph. In Figure UA, the arrow X1 indicates the scanning of the substrate " '', and the pattern image scans the substrate while allowing the drive mechanism to

200304167 五、發明說明(3) ------ 一定速度驅動(迴轉)扣^ ^4 Μ β τ&又衫於基板上。如上所述,補正機構 ί j 又又^板之播Υ係為一定,在第13Α圖係以傾斜Vd i不你晉P’1 推速度(同步移動速度)Va係為一 之位置。缺而,在第描方向於基板上以等間隔設定 f : ί井:圖之間隔Ta係表示對基準點(例 P4 P5) i )從位置PUP2、P3、P4)通過至位 / - P ^ t過之時間。即,時間T a為短的場合 係表=知描速度杈快,時間Ta為長的場合係表示掃描速 度較丨又。又,虛線係表示目標非線形補正量,實線係表 示實1 =非線形補正量(實際之圖案)。然而,補正機構 之驅e j始點係基板向掃描方向移動所定量之時點,也 就疋汉疋於各位置p 1〜P 5通過基準點之時點。在第1 3 a圖 所示之例,基板之掃描速度Va與按照基板之變形的補正 機構之驅動速度(補正速度)Vd之關係為適當,目標非線 形補正9量與實際之非線形補正成為一致。 但疋,先前之曝光裝置之補正機構係產生以 問題點。 η ^ _曝^光^裝/係對光罩具有使曝光光照射之光源,此光源 係Ik,用時間之經過而劣化以致光量(照度)低降。因 ^ 土面使光罩與基板以同步移動一面經介投影光學 系弟ί f ΐ之圖案投影曝光於感光基板的掃描型曝光裝 置,Ϊ 2按照光源之光量低降使同步移動速度加以變 化,,、體的係藉由按照光源之光量低 變慢,可控制基板上之曝光量使在所期望』;移動速度200304167 V. Description of the invention (3) ------ Drive at a certain speed (turn) buckle ^ ^ 4 Μ β τ & and shirt on the substrate. As described above, the correction mechanism ί j and 板 of the broadcasting system is constant, and in FIG. 13A, the tilt Vd i is not the speed of the push P′1 (synchronous moving speed) Va is set to one position. By default, f is set on the substrate at equal intervals in the drawing direction. The interval Ta in the figure indicates that the reference point (for example, P4, P5, P5) i) passes from the positions PUP2, P3, and P4) to the position /-P ^ t elapsed time. That is, when the time Ta is short, the table = the scanning speed is fast, and when the time Ta is long, the scanning speed is higher. The dotted line indicates the target non-linear correction amount, and the solid line indicates real 1 = non-linear correction amount (actual pattern). However, the starting point of the driving mechanism of the correction mechanism is the time point when the substrate moves in the scanning direction, that is, the time point at which each of the positions p 1 to P 5 passes the reference point. In the example shown in Fig. 13a, the relationship between the scanning speed Va of the substrate and the driving speed (correction speed) Vd of the correction mechanism according to the deformation of the substrate is appropriate, and the target non-linear correction 9 amount is consistent with the actual non-linear correction. However, the correction mechanism of the previous exposure device was problematic. η ^ _ exposure ^ light ^ is equipped with a light source for illuminating the exposure light, the light source is Ik, which deteriorates with the passage of time so that the amount of light (illumination) decreases. Because the earth surface causes the photomask and the substrate to move synchronously, the scanning exposure device that exposes the pattern of the optical system through the projection lens of the projection lens f fΐ to the scanning type exposure device. Ϊ 2 changes the synchronous moving speed according to the decrease in the amount of light from the light source. The volume of the body is slowed down according to the low amount of light from the light source, and the exposure amount on the substrate can be controlled to be at the desired level "; the speed of movement

10803pif.ptd 第8頁 200304167 五、發明說明(4) 但是,先前之補正機構係以一定之驅動速度V d驅動之 關係,如第1 3 B圖所示之模式圖,為取得所期望之曝光量 而使感光基板之掃描速度比Va較慢變為Vb時(此時’時間 Tb係比時間Ta長),補正機構之驅動開始點係設定在各位 置P 1〜P 5通過基準點的時點之關係,對基準點從基板上之 位置P 1通過至位置P 2通過之間補正機構之驅動停止(驅動 速度Vd變成0),目標非線形補正量與實際之非線形補正 量成為不一致之狀態,特別在此場合,如第1 3 B圖所示, 補正量係變成斷續,不能以圓滑的加以進行。 一方面,例如,由不同方法使光源之輸出加以變化時 而將掃描速度變快之場合,此種場合,如第1 3 C圖所示, 使感光基板之掃描速度比Va較快變為Vc時(此時,時間Tc 係比時間T a短),補正機構之驅動開始點係設定在各位置 P 1〜P 5通過基準點之時點同時驅動速度V d係一定之關係, 對基準點從基板上之位置P1通過至位置P2通過之間補正 機構之驅動不完了。實際之非線形補正量與目標非線形 補正量成為不一致之狀態。 如此,目標補正量與實際之補正量產生偏離時,對己 經在基板所形成之圖案產生無法使下次圖案以良好精度 重疊於所定位置關係之問題。先前,如上述之目標非線 形補正量與實際之非線形補正量之偏離雖係在容許範 圍,近年來由圖案之微細化要求,對目標非線形補正量 之實際之非線形補正量的偏離己在不可忽視之程度。 發明内容10803pif.ptd Page 8 200304167 V. Explanation of the invention (4) However, the previous correction mechanism is driven by a certain driving speed V d, as shown in the pattern diagram in Figure 1 3 B, in order to obtain the desired exposure When the scanning speed of the photosensitive substrate becomes slower than Va and becomes Vb (at this time, 'time Tb is longer than time Ta'), the driving start point of the correction mechanism is set at the time when each position P1 ~ P5 passes the reference point As for the relationship between the reference point passing from the position P 1 on the substrate to the position P 2 passing, the driving of the correction mechanism is stopped (the driving speed Vd becomes 0), and the target non-linear correction amount and the actual non-linear correction amount are inconsistent. In particular, In this case, as shown in Fig. 13B, the correction amount is intermittent and cannot be performed smoothly. On the one hand, for example, when the scanning speed becomes faster when the output of the light source is changed by different methods, in this case, as shown in Figure 1C, the scanning speed of the photosensitive substrate is made faster than Va and becomes Vc. (At this time, time Tc is shorter than time T a), the driving start point of the correction mechanism is set at the time when the positions P 1 to P 5 pass the reference point, and the simultaneous driving speed V d is a certain relationship. The driving of the correction mechanism between the passage of position P1 to the passage of position P2 on the substrate is not completed. The actual non-linear correction amount is inconsistent with the target non-linear correction amount. In this way, when the target correction amount deviates from the actual correction amount, a problem arises in that the pattern formed on the substrate cannot make the next pattern overlap with a predetermined position relationship with good accuracy. Previously, although the deviation between the target non-linear correction amount and the actual non-linear correction amount was within the allowable range, in recent years, the deviation of the actual non-linear correction amount of the target non-linear correction amount has been demanded by the miniaturization of the pattern. degree. Summary of the invention

10803pif.ptd 第9頁 200304167 五、發明說明(5) 本發明之目的係鑒於此種問題點加以進 一種曝光方法及曝光裝詈,在一面補正後 ^ ^衣直隹 曲補止像特性掃描曝夹 時,精由進行良好精度之補正,可一面使圖案以良2 度重璺於所定之位置關係,進行精度良好之曝光處理: 解決上述課題之本發明係採用對應於實施 圖〜第1 2圖之以下結構。 y、 本明之曝光方法係在一面使光罩(M)與基板(p)以同步 移動一面經介投影光系統(PL1〜PL5)使光罩(M)之圖案投^ 影於基板(P)之曝光方法,其特徵在於,由設於投影/光又學 系統(PL1〜PL5)之補正機構(23、28、31、27)加以補正投 影於基板(P )之圖案像的位置同時,使補正像之位置的補 正速度(Vx34a、Vy34a、VR34a、VSk)或補正量(x34a、y34a、r 34a、S k )按照同步移動速度加以設定。 依照本發明’按照光罩與基板之同步移動速度,加以 設定補正投影於基板之圖案像的位置之補正速度或補正 量的關係,雖同步移動速度變化也可使目標補正量與實 際之補正量一致。因而,可使圖案以良好精度重疊於所 定之位置關係,能進行精度良好之曝光處理。 本發明之曝光裝置(EX)係在一面使光罩(M)與基板(p) 以同步移動一面經介投影光學系統(PL)使光罩(M)之圖案 投影於基板(P)之曝光裝置,其特徵在於,包括補正機構 (23 、28 、31 、27)"驅動裝置(50A 、50B 、51A 、51B 、52) 以及控制裝置(C0NT)。其中,補正機構(23、28、31、 2 7 )係設在投影光學系統(p L 1〜P L 5 ),加以補正投影於基10803pif.ptd Page 9 200304167 V. Description of the invention (5) The purpose of the present invention is to provide an exposure method and exposure equipment in view of such problems, and correct it on one side after scanning. At the time of clamping, fine precision correction can be performed, and the pattern can be refocused to a predetermined position relationship at a good 2 degrees while performing accurate exposure processing: The present invention that solves the above-mentioned problem adopts corresponding to the implementation diagram ~ the first 2 The following structure of the figure. y. The exposure method of Benming is to make the mask (M) and the substrate (p) move synchronously through the projection light system (PL1 ~ PL5) to project the pattern of the mask (M) on the substrate (P). The exposure method is characterized by correcting the position of the pattern image projected on the substrate (P) by a correction mechanism (23, 28, 31, 27) provided in the projection / optical system (PL1 to PL5), and simultaneously The correction speed (Vx34a, Vy34a, VR34a, VSk) or correction amount (x34a, y34a, r 34a, Sk) of the position of the correction image is set in accordance with the synchronous movement speed. According to the present invention, the relationship between the correction speed or the correction amount for correcting the position of the pattern image projected on the substrate is set according to the synchronous movement speed of the photomask and the substrate. Although the synchronous movement speed changes, the target correction amount and the actual correction amount can be set. Consistent. Therefore, the pattern can be superimposed on a predetermined positional relationship with good accuracy, and the exposure processing can be performed with high accuracy. The exposure device (EX) of the present invention is for exposing the mask (M) and the substrate (p) on one side so as to move synchronously through the projection optical system (PL) to project the pattern of the mask (M) on the substrate (P) for exposure. The device is characterized by including a correction mechanism (23, 28, 31, 27) " drive device (50A, 50B, 51A, 51B, 52) and a control device (CONT). Among them, the correction mechanism (23, 28, 31, 2 7) is provided in the projection optical system (p L 1 to P L 5), and the projection is corrected to the base

10803pif. ptd 第10頁 200304167 五、發明說明(6) 板(P)之圖案的像特性。驅動裝置(5〇A '50B、51A、 51B、52)係驅動補正機構(23、28、31、27)。控制裝置 (C0NT)係按照同步移動速度,在驅動裝置(5〇A、5〇b、 5 1 A、5 1 B、5 2 )設定驅動速度及驅動量中之至少任何一 方。 依照本發明,在投影光學系統設補正投影於基板之圖 案的像特性之補正機構,按照光罩與基板之同步移動速 度,以設定驅動補正機構之驅動裝置的驅動速度或驅動 量之關係,雖同步移動速度變化時也能使目標補正量與 實際之補正量一致。因而,可使圖案在所定位置關係以 良好精度重疊’能進行良好精度之曝光處理。 本發明之曝光裝置(EX)係在一面使光罩(M)與基板(p) 以同步移動一面經介投影光學系統(PL)使光罩(μ)之圖案 投影於基板(P )之曝光裝置,其特徵在於,包括補正機構 (23、28、31、27)、驅動裝置(50A、50B、51A、51B、 52)以及控制裝置(C0NT)。其中,補正機構(23、28、 31、27)係設在投影光學系統(pli〜PL5),對投影於基板 (P )之圖案的像特性加以補正。驅動裝置(5 〇 A、5 0 B、 5 1 A、5 1 B、5 2 )係驅動補正機構(2 3、2 8、3 1、2 7 )。控 制裝置(C0NT)係按照光罩(M)或基板(P)之位置,在驅動 裝置(50A、50B、51A、51B、52)設定驅動速度及驅動量 中之至少任何一方。 依照本發明,在投影光學系統設補正投影於基板之圖 案的像特性之補正機構,按照光罩或基板之位置以設定10803pif. Ptd Page 10 200304167 V. Description of the invention (6) Image characteristics of the pattern of the plate (P). The driving device (50A'50B, 51A, 51B, 52) is a driving correction mechanism (23, 28, 31, 27). The control device (CONT) sets at least one of a driving speed and a driving amount in the driving device (50A, 50b, 5 1 A, 5 1 B, 5 2) in accordance with the synchronous moving speed. According to the present invention, a correction mechanism for correcting the image characteristics of a pattern projected on a substrate is provided in the projection optical system, and the relationship between the driving speed or the driving amount of the driving device for driving the correction mechanism is set according to the synchronous movement speed of the mask and the substrate. When the synchronous movement speed is changed, the target correction amount can be consistent with the actual correction amount. Therefore, it is possible to superimpose the patterns at a predetermined positional relationship with good precision 'and perform the exposure processing with good precision. The exposure device (EX) of the present invention is an exposure system in which the mask (M) and the substrate (p) are moved on one side in synchronization with the projection optical system (PL) to project the pattern of the mask (μ) on the substrate (P). The device is characterized by including a correction mechanism (23, 28, 31, 27), a driving device (50A, 50B, 51A, 51B, 52), and a control device (CONT). Among them, the correction mechanism (23, 28, 31, 27) is provided in the projection optical system (pli ~ PL5), and corrects the image characteristics of the pattern projected on the substrate (P). The driving devices (50 A, 50 B, 5 1 A, 5 1 B, 5 2) are drive correction mechanisms (2 3, 2 8, 3, 1, 7). The control device (CONT) sets at least one of the driving speed and the driving amount in the driving device (50A, 50B, 51A, 51B, 52) according to the position of the mask (M) or the substrate (P). According to the present invention, a correction mechanism for correcting the image characteristics of a pattern projected on a substrate is provided in the projection optical system, and is set according to the position of the mask or the substrate.

10803pif.ptd 第11頁 200304167 五、發明說明(7) 驅動補正機構之驅動裝置的驅動速度或驅動量之關係, 雖基板變形時也能使目標補正量與實際之補正量一致可 良好進行非線形補正。因而,可使圖案在所定之位置關 係以良好精度重疊,能進行良好精度之曝光處理。 依照本發明之曝光方法及曝光裝置,按照光罩與基板 之同步移動速度,以設定使投影於基板之圖案的像位置 加以補正之補正速度或補正量之關係,雖同步移動速度 變化時也可使目標補正量與實際之補正量一致。因而, 可使圖案在所定之位置關係以良好精度重疊,能以良好 精度進行曝光處理。 為讓本發明之上述原理和其他目的、特徵和優點能更 明顯易懂,下文特舉一較佳實施例,並配合所附圖式, 作詳細說明如下: 實施方式 以下,對於本發明之曝光方法及曝光裝置一面參照圖 面一面加以說明。第1圖係表示本發明之曝光裝置的一實 施例之概略構成圖,第2圖係第1圖之概略斜視圖。 在第1圖及第2圖,曝光裝置EX係包括照明光學系統 IL、光罩機台MST、複數投影光學系統PU〜P5、基板機台 P多T、光罩側雷射干涉儀39a、39b、基板側雷射干涉儀 3 9a、3 9b。其中,照明光學系統IL係具有以曝光光照明 光罩Μ之複數照明系統組件(Module) 10a〜10e。光罩機台 MST係支承光罩μ。數數投影光學系統PL卜PL5係配置成對 應於各照明系統組件1 0 a〜1 0 e,使以曝光光所照明之光罩10803pif.ptd Page 11 200304167 V. Explanation of the invention (7) The relationship between the driving speed or the driving amount of the driving device of the driving correction mechanism, although the target deformation amount can be consistent with the actual correction amount when the substrate is deformed, non-linear correction can be performed well. . Therefore, the patterns can be superimposed at a predetermined position relationship with good accuracy, and the exposure processing can be performed with good accuracy. According to the exposure method and the exposure device of the present invention, the relationship between the correction speed or the correction amount for correcting the image position of the pattern projected on the substrate is set in accordance with the synchronous movement speed of the mask and the substrate. Make the target correction amount consistent with the actual correction amount. Therefore, the patterns can be superimposed at a predetermined positional relationship with good accuracy, and exposure processing can be performed with good accuracy. In order to make the above principles and other objectives, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail, in conjunction with the accompanying drawings, as follows: Embodiments The following is an exposure of the present invention. The method and the exposure device will be described with reference to the drawings. Fig. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus of the present invention, and Fig. 2 is a schematic perspective view of Fig. 1. In FIGS. 1 and 2, the exposure system EX includes an illumination optical system IL, a mask table MST, a plurality of projection optical systems PU to P5, a substrate table PT, and a mask-side laser interferometer 39a, 39b And substrate-side laser interferometers 39a and 39b. The illumination optical system IL includes a plurality of illumination system modules 10a to 10e that illuminate the mask M with exposure light. Photomask table MST is a photomask μ. The digital projection optical system PL and PL5 are arranged to correspond to each of the lighting system components 1 0 a to 1 0 e, so that a mask illuminated by exposure light is used.

10803pif. ptd 第12頁 200304167 五、發明說明(8) Μ的圖案之像投影於感光基板(基板)p上。基板機台PST係 支承感光基板P。光罩侧雷射干涉儀3 9 a、3 9 b係使用雷射 光檢測光罩機台MST之位置。基板側雷射干涉儀43a、43b 係使用雷射光檢測基板機台PST之位置。在本實施例,照 明系統組件係有1 〇 a〜1 〇 e之五個,在第1圖為方便起見僅 表示對應於照明系統組件1 〇 a者,各照明系統組件 1 0 a〜1 0 e係具有同樣結構。感光基板p係在玻璃板塗布光 阻(感光劑)者。 在本實施形態之曝光裝置E X,係一面使支承於光罩機 台MST之光罩Μ與支承於基板機台pST之感光基板p以同步 移動一面經介投影光學系統PL使光罩μ之圖案投影曝光於 感光基板Ρ的掃描型曝光裝置。在以下之說明,使投影光 學系統PL之光軸方向為ζ軸方向,與ζ軸方向成成垂直之 方向而在光罩Μ及感光基板ρ之同步移動方向(掃描方向) 為X軸方向,直交於Ζ軸方向及X軸方向的方向(非掃描方 向)為Υ轴方向。 如第1圖所示,照明光學系統丨L包括曝光用光源6、橢 圖鏡6a、一向色鏡(dichroic mirror)7、波長選擇濾光 器(filter)8、及光導向器(Hght guide)9。橢圖鏡6a係 使從光源6射出之光束聚光。二向色鏡7係從橢圖鏡6a所 聚光之光束中使曝光所必要波長之光束反射,其他波長 之光束透過。波長選擇濾光器8係從二向色鏡7反射光束 中更再僅使曝光所必要波長通過。光導尚器9係使從波長 選擇濾光器8之光束分岐為複數條(在本實施例為五條),10803pif. Ptd Page 12 200304167 V. Description of the invention (8) The image of the pattern of M is projected on the photosensitive substrate (substrate) p. The substrate table PST supports a photosensitive substrate P. The mask side laser interferometers 3 9 a and 3 9 b use laser light to detect the position of the mask machine MST. The substrate-side laser interferometers 43a and 43b detect the position of the substrate table PST using laser light. In this embodiment, the lighting system components are five of 10a to 10e. In FIG. 1, for convenience, only those corresponding to the lighting system component 1a are shown, and each lighting system component 10a to 1 0 e system has the same structure. The photosensitive substrate p is a glass substrate coated with a photoresist (photosensitizer). In the exposure apparatus EX of this embodiment, the pattern of the mask μ is patterned through the projection optical system PL while the mask M supported by the mask table MST and the photosensitive substrate p supported by the substrate table pST are moved synchronously. A scanning type exposure apparatus that projects and exposes a photosensitive substrate P. In the following description, the direction of the optical axis of the projection optical system PL is the z-axis direction, which is perpendicular to the z-axis direction, and the synchronous movement direction (scanning direction) of the mask M and the photosensitive substrate ρ is the x-axis direction. A direction orthogonal to the Z-axis direction and the X-axis direction (non-scanning direction) is the Y-axis direction. As shown in FIG. 1, the illumination optical system includes an exposure light source 6, an ellipsoid mirror 6a, a dichroic mirror 7, a wavelength selection filter 8, and a light guide. 9. The ellipsoid mirror 6a focuses the light beam emitted from the light source 6. The dichroic mirror 7 reflects light beams of a wavelength necessary for exposure from the light beams collected by the ellipsoid mirror 6a, and transmits light beams of other wavelengths. The wavelength-selective filter 8 passes the reflected light from the dichroic mirror 7 and passes only the wavelength necessary for exposure. The light guide unit 9 divides the light beams from the wavelength selection filter 8 into a plurality of lines (in this embodiment, five lines),

l〇803pif.ptdl〇803pif.ptd

第13頁 200304167 五、發明說明(9) 經介反射鏡1 1入射於各照明系統組件1 〇 a〜1 0 e。在本實施 例之曝光用光源6係使用水銀燈,曝光光係由波長選擇濾 光器8、使用曝光所必要波長之g線(4 3 6 n m )、h線 (4 0 5 nm )、hiM365nm)等。Page 13 200304167 V. Description of the invention (9) The light-transmitting mirror 11 is incident on each lighting system component 10a to 10e. In this embodiment, the exposure light source 6 is a mercury lamp, and the exposure light is selected by a wavelength selection filter 8. The g-line (4 3 6 nm), h-line (40 5 nm), and hiM365 nm are used for the wavelength necessary for exposure. Wait.

照明系統組件1 0 a係包括照明快門(s h u 11 e r ) 1 2,中繼 透鏡(r e 1 a y 1 e n s ) 1 3、光學積分器(o p t i c a 1 i nt egrator ) 1 4、及聚焦透鏡(condenser 1 ens ) 1 5 ° 其 中,光學積分器14係調整通過中繼透鏡13之光束使成為 大略均一照度分布之光束以變換為曝光光。聚焦透鏡1 5 係使從光學積分器1 4之曝光光聚光以均一照度照明光罩 Μ。在本實施例,與照明系統組件1 〇 a同樣結構之照明系 統組件1 0 b〜1 0 e係以一定之間隔配置於X軸方向與γ軸方 向。 照明快門1 2係在光導向器9之光路下游側對光束之光 路配置成能以進退自如,以司光束之遮蔽·解除。在照 明快門1 2設使此照明快門1 2對光路加以進退移動之快門 驅動部1 2 D ’由控制置c 〇 N T控制其驅動。The lighting system component 1 0 a includes an illumination shutter (shu 11 er) 1 2, a relay lens (re 1 ay 1 ens) 1 3, an optical integrator (optica 1 i nt egrator) 1 4, and a focusing lens (condenser 1 ens) 1 5 ° Wherein, the optical integrator 14 adjusts the light beam passing through the relay lens 13 so that the light beam having a substantially uniform illumination distribution is converted into exposure light. The focusing lens 1 5 condenses the exposure light from the optical integrator 14 to illuminate the mask M with uniform illumination. In this embodiment, the lighting system components 10 b to 10 e having the same structure as the lighting system component 10a are arranged at a certain interval in the X-axis direction and the γ-axis direction. The lighting shutter 12 is arranged on the downstream side of the light path of the light guide 9 to the light path of the light beam so that it can move forward and backward freely, and the light beam can be shielded and released. The lighting shutter 12 is provided with a shutter driving unit 12 D 'that moves the lighting shutter 12 forward and backward in the optical path, and its driving is controlled by a control unit 〇 Ν Τ.

照明系統組件1 〇 a (1 〇 b〜1 〇 e )係具有光量調整機構丨8。 光量調整機構1 8係藉由在每一光路設定光束之照度以調 擎各米路之曝光量,包括半透明反射鏡 (h?lfiirr〇r)19、檢測器(detect〇r)2〇、濾光器 (filter)21及濾光器驅動部21D。半透明反射鏡19係配 置在濾光器21與中繼透鏡13間之光路中,使透過濾光器 21之光束的一部分入射於檢測器2〇。各檢測器2〇經常係The lighting system component 10a (10b ~ 10e) has a light amount adjustment mechanism. The light amount adjustment mechanism 18 is to adjust the exposure of each meter by setting the illuminance of the light beam in each optical path, including a semi-transparent mirror (h? Lfiirror 19), a detector (detector 2), A filter 21 and a filter driving section 21D. The semi-transparent mirror 19 is disposed in the optical path between the filter 21 and the relay lens 13 so that a part of the light beam that has passed through the filter 21 enters the detector 20. Each detector 20 is often

200304167 五、發明說明(ίο) 以獨立檢測入射光束之照度,所檢測之照度信號係向控 制裝置CONT輸出。 濾光器21係在玻璃板上用鉻(Cr)等以條紋狀加以圖案 化,係以形成為透射率沿Y軸方向在某範圍逐漸變化成線 形,配置在各光路中之照明快門1 2與半透明反射鏡1 9之 間。此等半透明反射鏡1 9、檢測器2 0及濾光器2 1係各配 設於複數之各光路。濾光器驅動部2 1 D係依據控制裝置 C0NT之指示使濾光器21向Y軸方向移動。藉由濾光器驅動 部2 1 D驅動濾光器2 1,以調整各光路之光量。 透過光量調整機構1 8之光束係經介中繼透鏡1 3到達光 學積分器1 4。在光學積分器1 4之射出面側係形成二次光 源,從光學積分器1 4之曝光光係經介聚焦透鏡1 5以均一 照度照射支承於光罩機台MST之光罩Μ。然而,從各照明 系統組件1 0 a〜1 0 e所射出之曝光光係照明在光罩Μ上之各 相異照明領域。 支承光罩Μ之光罩機台MST係設成可能-移動,具有實行 一維之掃描曝光的X軸方向之長行程和,在與掃描方向直 交之Υ軸方向的所定距離之行程。如第1圖所示,光罩機 台MST係具有使此光罩機台MST向X軸方向及Υ軸方向驅動 之光罩機台驅動部MSTD。光罩機台驅動部MSTD係由控制 裝置C0NT所控制。 如第2圖所示,光罩側雷射干涉儀係包括X雷射干涉儀 3 9a與Υ雷射干涉儀39b。其中,X雷射干涉儀係檢測光罩 機台MST在X軸方向之位置,Y雷射干涉儀3 9b係檢測光罩200304167 V. Description of the Invention (ίο) The illuminance of the incident beam is independently detected, and the detected illuminance signal is output to the control device CONT. The filter 21 is patterned in a stripe pattern using chromium (Cr) or the like on a glass plate, and is formed so that the transmittance gradually changes into a linear shape in a certain range along the Y-axis direction, and the lighting shutters arranged in each optical path 1 2 And translucent mirrors 19. These semi-transparent mirrors 19, detectors 20, and filters 21 are each arranged in a plurality of optical paths. The filter driving section 2 1D moves the filter 21 in the Y-axis direction according to an instruction from the control device CONT. The filter 21 is driven by the filter driving section 2 1 D to adjust the light amount of each optical path. The light beam transmitted through the light amount adjusting mechanism 18 reaches the optical integrator 14 through the relay lens 13. A secondary light source is formed on the exit surface side of the optical integrator 14 and the exposure light from the optical integrator 14 is irradiated with a uniform light intensity through the mask M supported by the mask machine MST through the focusing lens 15. However, the exposure light emitted from each of the lighting system components 10 a to 10 e is irradiated in different illumination areas on the mask M. The mask machine MST supporting the mask M is set to be possible-movable, and has a long stroke in the X-axis direction for performing one-dimensional scanning exposure and a stroke in a predetermined distance in the Z-axis direction orthogonal to the scanning direction. As shown in Fig. 1, the mask table MST includes a mask table driving section MSTD for driving the mask table MST in the X-axis direction and the Z-axis direction. The mask table driving unit MSTD is controlled by the control unit CONT. As shown in FIG. 2, the mask-side laser interferometer includes an X laser interferometer 39a and a Υlaser interferometer 39b. Among them, the X laser interferometer is the detection mask. The position of the MST in the X axis direction, and the Y laser interferometer 3 9b is the detection mask.

10803pif.ptd 第15頁 200304167 五、發明說明(11) 機台M S T在Y軸方向之位置。在光罩機台M s τ之+ χ側端緣係 設延伸於Y軸方向之X移動鏡38a。一方面,在光罩機台 M S T之+ Y側端緣係设以延伸在X轴方向與X移動鏡3 8 a直交 之Y移動鏡38b。在X移動鏡38a,X雷射干涉儀39a係以對 向配置,在Y移動鏡38b,γ雷射干涉儀3 9b係以對向配 置。 X雷射干涉儀3 9a係使雷射光照射乂移動鏡3 8a。由雷射 光之照射在X移動鏡3 8a所產生之光(反射光)係由χ雷射干 涉儀39a内部之檢測器受光。x雷射干涉儀39a係依據從乂 移動鏡3 8a之反射光,以内部之參照鏡位置為基準檢測χ 移動鏡38a之位置,即光罩機台MST在χ軸方向之位置。尚 且,光罩Μ之位置係藉由預先計測對光罩機台MST之光罩M 之各位置,可由雷射干涉儀之檢查值加以監視。 Y軸雷射干涉儀3 9b係使雷射光照射γ移動鏡3 8b。由雷 射光之照射在Y移動鏡38b所產生之光(反射光)係由γ雷射 v干上儀二二内部Λ檢測器受光。γ雷射干涉儀39b係依據從 Y移動鏡38b之反射《,以内部之參照鏡位置為基準檢測γ 移動鏡38b之位置,即光罩機台MST(由此係光罩趵在¥ 方向之位置。 電射干涉儀39a、39b之各檢出結果係輸出於控制梦 、了 ,以絰;丨光罩機台驅動部MSTD驅動光罩機台MST 進行光罩Μ之位置控制。 早械口 MbT, 透過光罩Μ之曝光光係入射於各投影光學系統10803pif.ptd Page 15 200304167 V. Description of the invention (11) The position of the machine M S T in the Y-axis direction. An X moving mirror 38a extending in the Y-axis direction is provided on the + χ side edge of the mask table M s τ. On the one hand, at the + Y side end edge of the mask machine M S T is provided a Y moving mirror 38b that extends orthogonally to the X moving mirror 3 8 a in the X-axis direction. In the X-moving mirror 38a, the X laser interferometer 39a is arranged in an opposite direction, and in the Y-moving mirror 38b, the γ laser interferometer 39b is arranged in an opposite direction. The X laser interferometer 39a makes the laser light irradiate the krypton moving mirror 38a. The light (reflected light) generated by the irradiation of the laser light on the X moving mirror 38a is received by the detector inside the X laser interferometer 39a. The x-laser interferometer 39a detects the position of the x-moving mirror 38a based on the reflected light from the 乂 moving mirror 38a, based on the position of the internal reference mirror, that is, the position of the mask machine MST in the x-axis direction. In addition, the position of the mask M is measured in advance on each position of the mask M of the mask machine MST, and can be monitored by a laser interferometer inspection value. The Y-axis laser interferometer 39b causes the laser light to irradiate the gamma moving mirror 38b. The light (reflected light) generated by the irradiation of the laser light on the Y moving mirror 38b is received by the internal laser γ detector of the gamma laser v dry instrument. The γ laser interferometer 39b is based on the reflection from the Y moving mirror 38b. The position of the γ moving mirror 38b is detected based on the position of the internal reference mirror, that is, the mask machine MST (therefore, the mask is in the ¥ direction. Position. The detection results of the radio interference interferometers 39a and 39b are output to the control dream, and 绖; 丨 mask machine driver MSTD drives the mask machine MST to control the position of the mask M. Early machine mouth MbT, the exposure light passing through the mask M is incident on each projection optical system

10803pif. ptd 第16頁 200304167 五、發明說明(12) P L 1〜P L 5。各投影光學系統p L 1〜P L 5使存在於光罩μ之照明 領域之圖案像投影曝光於感光基板ρ,係配置成對應於各 照明系統組件lOadOe。投影光學系統PL1、PL3、jTL5與 投影光學系統P L 2、P L 4係以曲折狀配成二列。即,以曲 折狀配置之各投影光學系統p L 1〜P L 5,彼此相鄰之投影學 系統(例如,投影光學系統PL1與PL2、PL2與PL3)係以所 定變位量配置在X軸方向。透過各投影光學系統p L 1〜ρ [ 5 的曝光光,係使對應於光罩Μ之照射領域的圖案像結像在 由基板機台PST所支承之感光基板Ρ上的相異投影領域。 照明領域之光罩Μ的圖案係以具有所定之結像特性轉印於 塗光阻之感光基板Ρ上。 、 支承感光基板Ρ之基板機台PST係設成可能移動,具有 進行一維掃描曝光之在X軸方向的長行程和,在與掃描方 向直父之方向以步位移動之Υ轴方向的長行程。又,基板 機台PST係具有使此基板機台PST在X軸方向及Υ軸方向, 更在Ζ軸方向加以驅動之基板機台驅動部p s T D。基板機台 驅動部PSTD係由控制裝置CONT所控制。 如第2圖所示,基板側雷射干涉儀係包括X雷射干涉儀 43a與Y雷射干涉儀43b。其中,X雷射干涉儀43a係檢測基 板機台PST之在X軸方向的位置,γ雷射干涉儀43b係檢測 基板機台PST之在Y軸方向的位置。在基板機台pST之+义側 的端緣係設延伸於γ轴方向之X移動鏡42a。在基板機台 PST之-Y側的端緣係設以直交於X移動鏡42a在X軸方向延 伸之Y移動鏡42b。在X移動鏡4 2a係以對向配置X雷射干涉10803pif. Ptd page 16 200304167 V. Description of the invention (12) P L 1 ~ P L 5. Each of the projection optical systems p L 1 to P L 5 projects and exposes a pattern image existing in the illumination area of the mask μ onto the photosensitive substrate ρ, and is arranged so as to correspond to each of the lighting system components 10adOe. The projection optical systems PL1, PL3, jTL5 and the projection optical systems P L 2 and P L 4 are arranged in two rows in a zigzag pattern. That is, each of the projection optical systems p L 1 to PL 5 arranged in a zigzag shape, and adjacent projection systems (for example, the projection optical systems PL1 and PL2, PL2 and PL3) are arranged in the X-axis direction with a predetermined displacement amount. . The exposure light that has passed through each of the projection optical systems p L 1 to ρ [5 is a different projection area of a pattern image corresponding to the irradiation area of the mask M on a photosensitive substrate P supported by the substrate table PST. The pattern of the photomask M in the lighting field is transferred onto the photoresist-coated photosensitive substrate P with predetermined image characteristics. The substrate machine PST supporting the photosensitive substrate P is set to be movable, and has a long stroke in the X-axis direction for one-dimensional scanning exposure, and a length in the Z-axis direction that moves in steps in the direction of the direct parent to the scanning direction. stroke. The substrate table PST includes a substrate table driving unit p s T D that drives the substrate table PST in the X-axis direction and the Y-axis direction, and further drives the Z-axis direction. The substrate machine drive PSTD is controlled by the controller CONT. As shown in Fig. 2, the substrate-side laser interferometer system includes an X laser interferometer 43a and a Y laser interferometer 43b. Among them, the X laser interferometer 43a detects the position of the substrate table PST in the X axis direction, and the γ laser interferometer 43b detects the position of the substrate table PST in the Y axis direction. An X-moving mirror 42a extending in the γ-axis direction is provided on the edge of the + sense side of the substrate table pST. An end edge of the -Y side of the substrate table PST is provided with a Y moving mirror 42b extending orthogonally to the X moving mirror 42a and extending in the X axis direction. The X-moving mirror 4 2a is arranged to face the X-laser interference

10803pif.ptd 第17頁 200304167 五、發明說明(13) --- 儀4 3a,在Y移動鏡4 2b係以對向配置γ雷射干涉儀43b。 X雷射干涉儀43a係使雷射光照射X移動鏡42a。由雷射 光之照射在X移動鏡4 2a所產生之光(反射光)係在χ雷射干 涉儀43a内部之檢測器受光。χ雷射干涉儀43a係依據從乂 移動鏡4 2a之反射光,以内部之參照鏡之位置為基準加以 檢測X移動鏡42a之位置,即基板機台pST(由此係感光基 板P )在X軸方向之位置。 Y雷射干涉儀4 3b係使雷射光照射於γ移動鏡42b。由雷 射光之照射在Y移動鏡42b所產生之光(反射光)係在γ雷射 干涉儀43b内部之檢測器受光。γ雷射干涉儀43b係依據從 Y移動鏡4 2 b之反射光,以内部之參照鏡的位置為基準加 以檢測Y移動鏡42b之位置,即基板機台pST在γ軸方向之 位置。尚且’感光基板P之位置係藉由預先計測對基板機 台PST之感光基板P之各位置,可由雷射干涉儀之檢查值 加以監視。 雷射干涉儀43a、43b之各檢出結果係輸出於控制裝置 C0NT ° 更且’基板機台PST所保持之感光基板p在z軸方向之 位置係為斜入射方式之焦點檢測系統之一的多點聚焦位 事檢測系統(未圖示)加以檢出。多點聚焦位置檢測系統 之,出結果係輸出於控制裝置C〇 NT。控制裝置CO NT係依 據雷射干涉儀4 3 a、4 3 b及多點聚焦位置檢測系統之各檢 出結果’經介基板機台驅動部p S τ D驅動基板機台p S T,以 進行感光基板P之位置控制。10803pif.ptd Page 17 200304167 V. Description of the invention (13) --- Instrument 4 3a, the Y moving mirror 4 2b is oppositely arranged with a gamma laser interferometer 43b. The X laser interferometer 43a irradiates laser light to the X moving mirror 42a. The light (reflected light) generated by the irradiation of the laser light on the X moving mirror 42a is received by the detector inside the X laser interferometer 43a. The χ laser interferometer 43a detects the position of the X-moving mirror 42a based on the reflected light from the 乂 moving mirror 42a, using the position of the internal reference mirror as the reference, that is, the substrate table pST (and thus the photosensitive substrate P) at X-axis position. The Y laser interferometer 4 3b irradiates laser light to the γ moving mirror 42b. The light (reflected light) generated by the laser light irradiating the Y moving mirror 42b is received by the detector inside the gamma laser interferometer 43b. The γ laser interferometer 43b detects the position of the Y moving mirror 42b based on the reflected light from the Y moving mirror 4 2 b based on the position of the internal reference mirror, that is, the position of the substrate table pST in the γ axis direction. In addition, the position of the 'photosensitive substrate P' is measured in advance on each position of the photosensitive substrate P of the substrate machine PST, and can be monitored by the inspection value of the laser interferometer. The detection results of the laser interferometers 43a and 43b are output to the control device CONT °, and the position of the photosensitive substrate p held by the substrate machine PST in the z-axis direction is one of the focus detection systems of the oblique incidence method. Multi-point focus position detection system (not shown) detects it. The result of the multi-point focus position detection system is output to the control unit CONT. The control device CO NT is based on the detection results of the laser interferometers 4 3 a, 4 3 b, and the multi-point focus position detection system. The substrate device p ST is driven via the substrate device driving unit p S τ D to perform Position control of the photosensitive substrate P.

10803pif. ptd 第18頁 200304167 五、發明說明(14) 各光罩機台MST及基板機台PST係在控制裝置C0NT之控 制下,由光罩機台驅動部MSTD及基板機台驅動部PSTD可 以獨立移動。然而,在本實施例,支承光罩Μ之光罩機台 MST與支承感光基板Ρ之基板機台PST係對投影光學系統PL 成為以任意之掃描速度(同步移動速度)在X軸方向同步移 動0 在此,如第2圖所示,曝光裝置ΕΧ係包括光罩機台速 度檢測裝置71與基板機台速度檢測裝置72。其中,光罩 機台速度檢測裝置71係檢測光罩機台MSΤ在X軸方向之移 動速度(即’同步移動速度),基板機台速度檢測裝置72 係檢測基板機台P S T在X軸方向之移動速度(即,同步移動 速度)。光罩機台速度檢測裝置7 1及基板機台速度檢測裝 置72之各檢出結果係輸出於控制裝置c〇NT。 第3圖係投影光學系統pli (PL2〜PL5)之概略構成圖。 在此,第3圖係僅表示對應於投影光學系統pL 1者,各投 影光學系統PL1〜PL5係具有同樣構成。 各投影光學系統P L 1〜P L 5係包括位移調 如第3圖所示 2 5、視野光 整機構23、二組之反射折射型光學系統24 圈26及倍率調整機構(補正機構)27。 透過光罩Μ之光束係入射於位移調整機構23。位移調 整機構2 3係在Υ軸周圍設可迴轉之平行平面玻璃板(正 機構)2 3Α與,在X軸周圍設可迴轉之平行平面玻璃板(補 ^機構)23Β。平行平面玻璃板23Α係由馬達等之驅動 5〇Α在Υ軸周圍迴轉,平行平面玻璃板23Β係由馬達等^10803pif. Ptd Page 18 200304167 V. Description of the invention (14) Each mask machine MST and substrate machine PST is under the control of the control device CONT. The mask machine driving unit MSTD and the substrate machine driving unit PSTD can Move independently. However, in this embodiment, the mask table MST supporting the mask M and the substrate table PST supporting the photosensitive substrate P are moved synchronously to the projection optical system PL in the X-axis direction at an arbitrary scanning speed (synchronous moving speed). 0 Here, as shown in FIG. 2, the exposure apparatus EX includes a mask table speed detection device 71 and a substrate table speed detection device 72. Among them, the mask machine speed detection device 71 detects the movement speed of the mask machine MST in the X-axis direction (ie, the synchronous movement speed), and the substrate machine speed detection device 72 detects the substrate machine PST in the X-axis direction. Movement speed (ie, synchronous movement speed). The detection results of the mask table speed detection device 71 and the substrate table speed detection device 72 are output to the control device cONT. FIG. 3 is a schematic configuration diagram of a projection optical system pli (PL2 to PL5). Here, FIG. 3 shows only those corresponding to the projection optical system pL 1, and each of the projection optical systems PL1 to PL5 has the same configuration. Each of the projection optical systems P L 1 to P L 5 includes a displacement adjustment as shown in Fig. 3 2 5. A field-of-view light adjustment mechanism 23, two sets of reflection-refraction optical systems 24 turns 26, and a magnification adjustment mechanism (correction mechanism) 27. The light beam transmitted through the mask M is incident on the displacement adjustment mechanism 23. The displacement adjustment mechanism 2 3 is provided with a rotating parallel plane glass plate (positive mechanism) 2 3Α around the Z axis and a rotating parallel plane glass plate (compensating mechanism) 23B around the X axis. The parallel plane glass plate 23A is driven by a motor or the like 50A rotates around the y-axis, and the parallel plane glass plate 23B is driven by a motor or the like ^

200304167 五、發明說明(15) 動裝置50B在X軸周圍迴轉。藉由平行平面玻璃板23A在Y 軸周圍迴轉感光基板P上之光罩Μ的圖案像係在X軸方向位 移,藉由平行平面玻璃板2 3 Β在X軸周圍迴轉感光基板ρ上 之光罩Μ的圖案像係在Υ軸方向位移。驅動裝置5〇α、50Β 之驅動速度及驅動量係由控制裝置C0NT各以獨立控制。 各驅動裝置5 0 A、5 0 Β係依據控制裝置C 〇 Ν Τ之控制,使各 平行平面玻璃板23A、23B以所定速度迴轉所定量(所定角 度)。 透過位移δ周整機構2 3之光束係入射於第一組反射折射 型光學系統24。反射折射型光學系統24係形成光罩μ之圖 案的中間像’包括直角稜鏡(補正機構)28、透鏡29及凹 面鏡30。 直角稜鏡28係設成可在ζ軸周圍迴轉,由馬達等之驅 動裝置51Α在Ζ軸周圍迴轉。藉由直角棱鏡28在2軸周圍迴 轉在感光基板Ρ上之光罩Μ之圖案像係在ζ轴圍轉。 由控制裝置cont所控制。驅動裝置 5 1 A係依據控制裝置c 〇 Ν T > 4^土丨 . (所定角度)迴轉。 工1 ,使直角稜鏡28以所定量 在由反射折射型光學灸^ 置係配置視野光圈26。視敕统24所形成之圖案的中間像位 投影領域。透過視野光圈?光圈2 6係設定感光基板ρ上之 射折射型光學系統2 5。 之光束係入射於第二組之反 反射折射型光學系統25 係與反射折射型光學系統2 4同200304167 V. Description of the invention (15) The moving device 50B rotates around the X axis. The pattern image of the mask M on the photosensitive substrate P is rotated around the Y axis by the parallel plane glass plate 23A, and the light on the photosensitive substrate ρ is rotated around the X axis by the parallel plane glass plate 2 3 Β. The pattern image of the cover M is displaced in the Z axis direction. The driving speed and driving amount of the driving devices 50a and 50B are independently controlled by the control device CONT. Each of the driving devices 50 A and 50 B rotates each of the parallel flat glass plates 23A and 23B at a predetermined speed (a predetermined angle) according to the control of the control device C 〇 ΝΤ. The light beam that has passed through the shifting spheroidizing mechanism 23 is incident on the first group of reflection-refraction optical systems 24. The reflection-refractive optical system 24 is an intermediate image 'forming a pattern of the mask µ, and includes a right-angled lens (correction mechanism) 28, a lens 29, and a concave mirror 30. The right angle 稜鏡 28 is provided so as to be rotatable around the z-axis, and a drive device 51A such as a motor is used to turn around the z-axis. The pattern image of the mask M on the photosensitive substrate P which is rotated around the two axes by the right-angle prism 28 is rotated around the z axis. Controlled by the control device cont. The driving device 5 1 A is rotated in accordance with the control device c 〇 T > 4 ^ soil 丨. (Predetermined angle). Work 1, so that the right angle 稜鏡 28 is arranged at a predetermined amount. Projection area of the middle image of the pattern formed by the video system 24. Aperture through the field of vision? The iris 2 6 sets the refractive optical system 25 on the photosensitive substrate ρ. The beam is incident on the second group of retroreflective optical system 25, which is the same as the retroreflective optical system 2 4

200304167200304167

樣,包括以具有迴轉調整機能之 構)31、透鏡32及凹面鏡以古JVo, 機 動裝置51B之駆動在Z軸^°、/絲角稜鏡j1也由馬達等之驅 上之光罩Μ之圖牵傻^ f圍轉,猎由迴轉使感光基板15 -”象在z軸周圍迴轉。驅動裝置& 動 速度及驅動量係由控制裝wrnMT: Μ Μ勒装置51B之驅動 依據控制裝置C0NT之二置C:N=二’驅動裝置51 B係 轉所定量(所定角^ 使直角陵鏡31以所定速度迴 從反射折射型光學糸統2 5射出之光束敕 機構(/1正機構)27,在感光基板P上使光罩Μ之圖σ案像 正立等倍結像。倍率調整機構2 7係例如 ^ 凸透鏡、平凸透鏡之三片透鏡所構成,藉凸; 鏡與平凸透鏡間位置之兩凸透鏡移動於Ζ軸方向,以 调整光罩Μ之圖案像的倍率(scaling)。此時,兩凸透鏡 係由驅動裝置52所移動,驅動裝置52係由控制裝置c〇NT 所控制。驅動裝置52係依據控制裝置C0NT之控制,使兩 凸透鏡以所定速度移動所定量。 二 弟4圖係表示在感光基板p上之各投影光學系統 PL1〜PL5之投影領域34a〜34e的平面圖。 各投影領域34a〜34e之每一領域係由視野光圈μ設定 成為所定形狀,在本實施例具有台形形狀。投影領^ 34a、34c、34e與投影領域34b、34d係以_向配置於X轴 方向。更且,投影領域34a〜34e之每一鄰接之投影領域的 彼此端部(境界部)(35a與35b、35c與35d、35e與35ί、 3 5g與35h)如兩點虛線所示,在Υ轴方向以重疊方式並聯For example, including the structure with the function of turning adjustment) 31, the lens 32 and the concave mirror are based on the ancient JVo, the motor 51B is moved on the Z axis ^ °, / the wire angle 稜鏡 j1 is also driven by the motor, etc. Figure fools around, f turns around, hunting makes the photosensitive substrate 15-"image revolves around the z-axis. The driving device & the moving speed and driving amount are controlled by the control device wrnMT: ΜΜ 勒 51B drive basis control device CONT The second set C: N = two 'drive device 51 B system turns the fixed amount (predetermined angle ^ causes the right-angled mausoleum 31 to return to the beam-emission mechanism from the reflective refractive optical system 2 5 at a predetermined speed (/ 1 positive mechanism) 27. Make the image of the photomask M on the photosensitive substrate P upright and equal. The magnification adjustment mechanism 27 is composed of three lenses, for example, a convex lens and a plano-convex lens, and is convex; between the mirror and the plano-convex lens. The two convex lenses at the position are moved in the Z-axis direction to adjust the scaling of the pattern image of the mask M. At this time, the two convex lenses are moved by the driving device 52, and the driving device 52 is controlled by the control device cONT. The driving device 52 is based on the control of the control device CONT. The movement at a predetermined speed is quantified. The second figure 4 is a plan view showing the projection areas 34a to 34e of the projection optical systems PL1 to PL5 on the photosensitive substrate p. Each area of each projection area 34a to 34e is set by the field aperture μ. It has a predetermined shape and has a mesa shape in this embodiment. The projection collars 34a, 34c, 34e and the projection areas 34b, 34d are arranged in the X-axis direction in the _ direction. Furthermore, each adjacent projection of the projection areas 34a to 34e. The ends (borders) of the realms (35a and 35b, 35c and 35d, 35e and 35ί, 3 5g and 35h) are shown in two dotted lines in parallel, overlapping in the direction of the Z axis

10803pi f. ptd 第21頁 200304167 五、發明說明(17) 配置’設定成為X軸方向之投影領域的幅度總計大略為相 等。即’設定成在X軸方向掃描曝光時曝光量為相等。 如此’由各投影領域34a〜34e之每一領域所重疊之接 合部3 6 a〜3 6 d,在接合部3 6 a〜3 6 d之光學像差的變化或照 度變化成為圓滑。尚且,本實施例之投影領域3 4 a〜3 4 e之 形狀雖為台形,也可為六角形或菱形,或者為平行四邊 形。 回至第1圖,在基板機台PST上大略與感光基板P之曝 光面同高處配設檢測器4 i。檢測器4 1係檢測關於感光基 板1"上之曝光光的光量之資訊(照度)的照度感應器由CCD 感應器所構成,檢測在感光基板p上之各投影光學系統 PL1〜PL5所對應之每一位置的曝光光之照度,使其所檢出 之檢出信號輪出於控制裝置CO NT。檢測器41係由在基板 機台P S T上以γ軸方向配設之導軸(未圖示)加以設置在與 感光基板P同一平面之高度,設成可由檢測器驅動部能在 與掃描方向(X軸方向)直交之方向(γ軸方向)移動。檢測 器41係在一次或複數次曝光之前,藉由基板機台PST在X 軸方向之移動與由照度感應器驅動部之γ軸方向的移動, 在投影光學系統PL卜PL5所對應之各投影領域34a〜3e之下 妒以掃描。因而,在感光基板P上之投影領域34a〜34e及 此等各投影領域3 4a〜34e之各境界部3 5a〜3 5h的曝光光之 照度係由檢測器4 1以二維方式加以檢測。由檢測器4 1所 檢出之曝光光的照度係輸出於控制裝置CO NT。此時,控 制裝置C0NT係由基板機台驅動部PSTD及檢測器驅動部之10803pi f. Ptd page 21 200304167 V. Description of the invention (17) The configuration ′ is set to be approximately equal in total in the projection area of the X-axis direction. That is, 'is set so that the exposure amounts are equal when scanning exposure in the X-axis direction. In this way, a change in optical aberration or a change in illuminance at the joining portions 3 6 a to 3 6 d becomes smooth from the joining portions 3 6 a to 3 6 d overlapped by each of the projection areas 34a to 34e. Moreover, although the shape of the projection fields 3 4 a to 3 4 e in this embodiment is a mesa shape, it may be a hexagonal shape or a rhombic shape, or a parallelogram. Returning to FIG. 1, a detector 4 i is arranged on the substrate table PST approximately at the same height as the exposure surface of the photosensitive substrate P. The detector 41 is an illuminance sensor that detects information (illuminance) on the light quantity of the exposure light on the photosensitive substrate 1 ", and is composed of a CCD sensor, and detects the correspondence between each of the projection optical systems PL1 to PL5 on the photosensitive substrate p The illuminance of the exposure light at each position makes the detection signal wheel detected by the control device CO NT. The detector 41 is provided by a guide shaft (not shown) arranged on the substrate table PST in the γ-axis direction at the same level as the photosensitive substrate P, and is set by the detector driving section in the scanning direction ( X-axis direction) moves in the direction orthogonal to (γ-axis direction). The detector 41 is a projection corresponding to the projection optical system PL and PL5 by the movement of the substrate table PST in the X-axis direction and the movement of the γ-axis direction by the illuminance sensor driving section before one or more exposures. Areas 34a ~ 3e are scanned with jealousy. Therefore, the illuminance of the exposure light of the projection areas 34a to 34e on the photosensitive substrate P and the boundary portions 35a to 35h of each of the projection areas 34a to 34e is detected in a two-dimensional manner by the detector 41. The illuminance of the exposure light detected by the detector 41 is output to the control device CO NT. At this time, the control device C0NT is composed of the substrate machine driving section PSTD and the detector driving section.

10803pif.ptd 第22頁 20030416710803pif.ptd Page 22 200304167

各驅動量,可加以檢測檢測器4丨之位置。 第5A、5B圖係表示由投影 構23補正在感光基板P卜夕外史用m 1之位移調整機 土攸r上之投影領域(圖荦 的情形模式圖。 μ系彳豕M4a之位置Each driving amount can be detected by the position of the detector 4 丨. Figures 5A and 5B show the projection area on the photoreceptor substrate M1, which is adjusted by the projection mechanism 23, and the projection area on the tuyou r (Figure 荦 is a schematic view of the situation. Μ is the position of M4a

如第5A圖所示,位移調整機構23之 2 3 A在以圖中實線所示之基準位置的場合千;千:=J ^ ^ tz ^ ^^ 5β ® ^ ^Ϊ 2投影領域43a(43ai)係設定於所定位 ί二::二圖之虛線…平行平面玻璃板“A 由驅動裝置50Α之驅動在γ軸周圍以所定量迴轉之人, 係如第5 Β圖以虛線所示,在感光基板ρ上投影領域 34a(34a〖)之位置係在X軸方向以所定量移動(shift)。在 此二在感光胃基板P上從投影領域34ai至投影領域34〜之移 動量(補正量’即,在感光基板P上投影領域34a之在 X軸方向的位置’係按照平行平面玻璃板2 3 a之γ軸周園的 迴轉量(角度,即,驅動裝置50A之驅動量加以設定。 又,從投影領域34a!向投影領域34a2之移動速度(補正速 度)Vx34a係按照平行平面玻璃板23 A之Y軸周圍的迴轉速度 ^,即,驅動裝置50A之驅動速度所設定。 同樣,在感光基板P上投影領域34a之在Y軸方向之務 動量(補正量)y34a係按照平行平面玻璃板23B之在X軸周_ 之迴轉量,即,驅動裝置5 0 B之驅動量加以設定,投影領 域34a之在Y軸方向之移動速度(補正速度)Vy34a係按照+ 行平面玻璃板23 B在X軸周圍之迴轉速度,即,驅動裝fAs shown in FIG. 5A, the position of the displacement adjustment mechanism 23-2 A at the reference position shown by the solid line in the figure is thousands; Thousands: = J ^ ^ tz ^ ^^ 5β ® ^ ^ 2 2 projection area 43a ( 43ai) is set at the second position: the dashed line of the second figure ... the parallel plane glass plate "A is driven by the driving device 50A around the γ axis and rotates by a predetermined amount, as shown in the dotted line in Figure 5B, The position of the projection area 34a (34a) on the photosensitive substrate ρ is shifted by a certain amount in the X-axis direction. Here, the amount of movement from the projection area 34ai to the projection area 34 ~ on the photosensitive stomach substrate P (correction) The amount 'that is, the position of the projection area 34a on the photosensitive substrate P in the X-axis direction' is set according to the rotation amount (angle, that is, the driving amount of the driving device 50A) of the γ-axis peripheral circle of the parallel flat glass plate 2 3a In addition, the moving speed (correction speed) Vx34a from the projection area 34a! To the projection area 34a2 is set according to the rotation speed around the Y axis of the parallel flat glass plate 23 A ^, that is, the driving speed of the driving device 50A. Similarly, Projection of the projection area 34a on the photosensitive substrate P in the Y-axis direction The amount (correction amount) y34a is set according to the rotation amount of the parallel plane glass plate 23B in the X-axis periphery, that is, the driving amount of the driving device 5 0 B. The movement speed (correction speed) of the projection area 34a in the Y-axis direction ) Vy34a is the rotation speed of the flat glass plate 23 B around the X axis in accordance with + line, that is, the driving device f

10803pif.ptd 第23頁 200304167 五、發明說明(19) 5 0 B之驅動速度加以設定。 更且,在迴轉補正也同樣,如第6A圖所示,在感光基 板P上投影領域34a之迴轉量R34a,即,在感光基板P上投 影領域34a在Z軸周圍方向之位置,係按照三角稜鏡28、 31在Z軸周圍之迴轉量,即,驅動裝置51A、51B之驅動量 加以設定,投影領域34a之迴轉速度(補正速度)VR34a係按 照三角稜鏡2 8、3 1在Z軸周圍之迴轉速度,即,驅動裝置 51A、51B之驅動速度加以設定。 對倍率補正也同樣,如第6B圖所示,在感光基板P上 之投影領域34a的倍率(補正量)Sk係按照倍率調整機構27 在Z軸方向之移動量,即,驅動裝置52之驅動量加以設 定,投影領域之倍率變化速度(補正速度)VSk係按照倍率 調整機構2 7在Z軸方向之移動速度,即,驅動裝置5 2之驅 動速度加以設定。 然而,藉由使此等各位移調整機構、迴轉調整機構、 及倍率调整機構以同時或選擇性的驅動,投影領域3 4 a在 感光基板上之位置及形狀可任意加以設定。 以上’對投影領域3 4 a加以說明,對其他投影領域 3b〜3 4e ’也可藉由使在各投影光學系統pL2〜pL5所設之各 俾移調整機構、迴轉調整機構、及倍率調整機構以同時 或,.以選擇性之驅動,感光基板p上之位置及形狀,可任意 加以設定。 如第7圖所示’在光罩1^之圖案領域形成像素(pixel) 圖案(共同圖案)44與,在該像素圖案44之γ軸方向兩端位10803pif.ptd Page 23 200304167 V. Description of the invention (19) The driving speed of 5 0 B is set. Moreover, the same applies to the rotation correction. As shown in FIG. 6A, the rotation amount R34a of the area 34a is projected on the photosensitive substrate P, that is, the position of the area 34a in the direction around the Z axis is projected on the photosensitive substrate P according to the triangle.稜鏡 28, 31 The amount of rotation around the Z axis, that is, the drive amount of the driving devices 51A, 51B is set, and the rotation speed (correction speed) of the projection area 34a VR34a is based on the triangle 稜鏡 2 8, 3 1 on the Z axis The surrounding turning speed, that is, the driving speed of the driving devices 51A, 51B is set. The same is true for the magnification correction. As shown in FIG. 6B, the magnification (correction amount) Sk of the projection area 34a on the photosensitive substrate P is the amount of movement in the Z-axis direction according to the magnification adjustment mechanism 27, that is, the driving of the driving device 52 The amount is set, and the rate of change (correction speed) VSk in the projection area is set in accordance with the movement speed of the magnification adjustment mechanism 27 in the Z-axis direction, that is, the driving speed of the driving device 52. However, by driving these displacement adjustment mechanisms, rotation adjustment mechanisms, and magnification adjustment mechanisms simultaneously or selectively, the position and shape of the projection area 3 4 a on the photosensitive substrate can be arbitrarily set. In the above description of the projection area 3 4 a, and for other projection areas 3 b to 3 4 e ', it is also possible to use each of the shift adjustment mechanisms, rotation adjustment mechanisms, and magnification adjustment mechanisms provided in each projection optical system pL2 to pL5. The position and shape on the photosensitive substrate p can be arbitrarily set by simultaneous or selective driving. As shown in FIG. 7 ', a pixel pattern (common pattern) 44 is formed in the pattern area of the mask 1 ^, and the two ends of the pixel pattern 44 in the γ-axis direction are formed.

10803pif.ptd 第24頁 200304167 五、發明說明(20) 置之周邊電路圖案(非共同圖案)4 5a、45b。在像素圖案 4 4係形成依照複數像素之複數電極以正確規則排列的圖 案。在周邊電路圖案45a、45b係形成驅動像素44之電極 的驅動電路等。 又’在光罩Μ之圖案領域的周圍,係在該光罩Μ之角隅 部位置形成光罩標識4 5a〜4 6d。光罩標識4 6 a〜4 6d係使用 在光罩Μ之定位時的各種補正量算出,係以鉻((:1«)等形成 十字形狀。 更且’在光罩Μ,沿X軸方向之兩側緣中央(即,光罩Μ 之Υ軸方向兩端之中央)之近傍位置各形成光罩定位標識 5 6a、5 6b °光罩定位標識係在與感光基板ρ之位置對準時 使用’與上述光罩標識46a〜46d同樣,係由鉻等形成十字 形狀。 與光罩Μ同樣,如第8圖所示,在感光基板P之投影領 域周圍,於該感光基板Ρ之角隅部位置形成基板標識 4 7a〜4 7d。基板標識4 7a〜4 7d係使用於感光基板之定位時 的各種補正量算出,係由鉻等形成十字形狀之透過部 48 ° 在感光基板P,也沿X軸方向之兩側緣中央(即,感光 基板P之Y軸方向兩端的中央)之近傍位置各形成基板定位 標識5 7a、5 7b。基板定位標識係與光罩Μ之位置對準時使 用,與上述基板標識47a〜47d同樣,係由鉻等形成十字形 狀之透過部。 此等光罩標識46a〜46d、基板標識47a〜47d及光罩定位10803pif.ptd Page 24 200304167 V. Description of the Invention (20) Peripheral circuit patterns (non-common patterns) placed 4 5a, 45b. The pixel pattern 44 is a pattern in which a plurality of electrodes are arranged in a regular pattern in accordance with a plurality of pixels. The peripheral circuit patterns 45a and 45b are driving circuits for forming electrodes for driving the pixels 44 and the like. Also, around the pattern area of the mask M, mask marks 4 5a to 4 6d are formed at the corners of the mask M. The mask marks 4 6 a to 4 6d are calculated using various correction amounts during positioning of the mask M, and are formed in a cross shape with chromium ((: 1 «), etc.) Furthermore, in the mask M, along the X-axis direction The mask positioning marks 5 6a and 5 6b are formed at the near positions of the center of both sides of the edges (that is, the centers of both ends in the y-axis direction of the mask M). The mask positioning marks are used to align with the position of the photosensitive substrate ρ. 'Like the mask marks 46a to 46d, it is formed in a cross shape by chromium. Like the mask M, as shown in FIG. 8, around the projection area of the photosensitive substrate P, at the corner of the photosensitive substrate P The substrate mark 4 7a ~ 4 7d is formed at the position. The substrate mark 4 7a ~ 4 7d is calculated by using various correction amounts for positioning of the photosensitive substrate. It is formed by a transparent portion formed in a cross shape by chromium and the like. The substrate positioning marks 5 7a and 5 7b are formed near the center of the edges of both sides in the X-axis direction (that is, the centers of both ends in the Y-axis direction of the photosensitive substrate P). The substrate positioning marks are used to align with the position of the photomask M, Similar to the above-mentioned substrate marks 47a to 47d, they are made of chrome or the like. Into the shape of a cross section of the transmission. Such identification reticle 46a~46d, and mask positioning substrate identification 47a~47d

10803pif.ptd 第25頁 200304167 五、發明說明(21) 標識56a、56b、基板定位標識57a、57b係由設置在第2圖 光罩Μ上方之定位系統(位置檢測部)4 9 a、4 9 b加以檢測。 定位系統49a、49b係具有向X軸方向移動之驅動機構(未 圖示),構成為在掃描曝光時從照明領域内退避的結構。 其次,說明使用上述之曝光裝置使光罩Μ之圖案曝光 於感光基板Ρ之方法。 在此,以下之說明,如第4圖所示,在台形形狀之投 影領域343〜346之長邊長度為1^1,短邊之長度為1^2,相鄰 投影領域之間隔(在投影領域之γ軸方向的間距)為L 3。 又’如第8圖所示,在感光基板ρ係形成像素圖案5 〇與, 在像素圖案50之Υ軸方向兩端的周邊電路圖案5ia、5ib, 感光基板P之周邊電路圖案51a、51b係使第7圖所示光罩Μ 之周邊電路圖案45a、45b藉由複數投影光學系統中之兩 端外側的投影光學系統p L 1、P L 5加以投影曝光來形成。 此時’光罩Μ之周邊電路圖案4 5 a、4 5 b係經介投影光學系 統PL1、PL5投影曝光於感光基板ρ以形成周邊電路圖案 5 1 a、5 1 b之方式,加以形成在光罩μ上。然而,感光基板 Ρ之周邊電路圖案51a、51b與,光罩Μ之周邊電路圖案 4 5a、4 5b係形成為同一尺寸、同形狀。又,在感光£板{) 之像素圖案50 ’X軸方向之長度為L5、Y軸方向之長度為 L6。一方面,在光罩μ之像素圖案44,Υ軸方向之長度為 L9 ’僅由兩端外侧之投影光學系統m、pL5所曝光之^ =向之長度各為L1〇、L11。在此,在光之像素圖案= X軸方向之長度係與感光基板ρ之像素圖案5〇同為。10803pif.ptd Page 25 200304167 V. Description of the invention (21) The marks 56a, 56b and the substrate positioning marks 57a, 57b are provided by the positioning system (position detection section) located above the photomask M in Figure 2 4 9 a, 4 9 b to test. The positioning systems 49a and 49b have a driving mechanism (not shown) that moves in the X-axis direction, and are configured to retreat from the lighting field during scanning exposure. Next, a method of exposing the pattern of the photomask M to the photosensitive substrate P using the above-mentioned exposure device will be described. Here, as shown in Figure 4, the length of the long side is 1 ^ 1, the length of the short side is 1 ^ 2, and the interval between adjacent projection areas (in the projection The distance in the γ-axis direction of the field) is L 3. As shown in FIG. 8, the pixel pattern 50 and the peripheral circuit patterns 5ia and 5ib at both ends in the y-axis direction of the pixel pattern 50 are formed on the photosensitive substrate ρ, and the peripheral circuit patterns 51a and 51b of the photosensitive substrate P are formed. The peripheral circuit patterns 45a and 45b of the mask M shown in FIG. 7 are formed by projection exposure of the projection optical systems p L 1 and PL 5 on both outer sides of the plurality of projection optical systems. At this time, the peripheral circuit patterns 4 5 a and 4 5 b of the mask M are projected and exposed on the photosensitive substrate ρ through the projection optical systems PL1 and PL5 to form the peripheral circuit patterns 5 1 a and 5 1 b. Photomask μ. However, the peripheral circuit patterns 51a and 51b of the photosensitive substrate P and the peripheral circuit patterns 45a and 45b of the photomask M are formed in the same size and shape. In addition, the length of the pixel pattern 50 'in the photosensitive plate {) in the X-axis direction is L5, and the length in the Y-axis direction is L6. On the one hand, in the pixel pattern 44 of the mask μ, the length in the y-axis direction is L9 ′, and the lengths of the light sources exposed by the projection optical systems m and pL5 outside the two ends are L10 and L11, respectively. Here, the length of the pixel pattern of light = X-axis direction is the same as the pixel pattern 50 of the photosensitive substrate ρ.

10803pi f. ptd 第26頁 200304167 五、發明說明(22) 在本貫施例之曝光處理,如第8圖所示,將感光基板p 上之全體曝光圖案分割為在Y軸方向具有長度Li2,包含 周邊電路圖案51a及像素圖案50之一部分的分割圖案53、 在Y轴方向具有長度L13具有像素圖案5〇之一部分的分割 圖案54、及在Y軸方向具有長度L14,包含周邊電路圖案 51b和像素圖案50之一部分的分割圖案55等之三領域,以 進行合計三次之掃描曝光。 長度L 1 2係投影領域3 4 a之短邊的+ γ方向端點與投影領 域34d之長邊的-γ方向端點間之在γ軸方向的距離。長度 L1 3係投影領域34b之長邊的+ Y方向端點與投影領域34c之 長邊的-Y方向端點間之在γ軸方向的距離。長度L丨4係投 影領域34b之長邊的+ Y方向端點與投影領域34e之短邊的 -Y方向端點間之在γ軸方向的距離。 又’分割圖案53與分割圖案54係在接合部58a重4, 分割圖案54與分割圖案55係在接合部58b重疊。又,接合 部5 8a、5 8b係各與投影領域34a〜34e之接合部3 6a〜3 6d以 同一距離重疊。 第9圖係表示關於本發明之曝光方法之流程圖。以 下’參考苐9圖說明本發明之曝光方法的第一實施例。 曝光裝置EX係開始曝光動作(階段SA0 )。 首先,設在基板機台P S T之檢測器4 1檢測投影領威 34a〜36e之照度(階段SAI )。 具體的係控制裝置C 0 N T向濾光器驅動部2 1 D輸出指 示,為使從光源6之光束以最大透射率透過濾光器2 1而移10803pi f. Ptd Page 26 200304167 V. Description of the invention (22) In the exposure process of this embodiment, as shown in FIG. 8, the entire exposure pattern on the photosensitive substrate p is divided into a length Li2 in the Y-axis direction, A division pattern 53 including a portion of the peripheral circuit pattern 51a and the pixel pattern 50, a division pattern 54 having a portion of the pixel pattern 50 in the length L13 in the Y-axis direction, and a length L14 in the Y axis direction, including the peripheral circuit pattern 51b and Three areas, such as the division pattern 55 of a part of the pixel pattern 50, are scanned for a total of three times. The length L 1 2 is the distance in the γ-axis direction between the + γ direction endpoint of the short side of the projection area 3 4 a and the -γ direction endpoint of the long side of the projection area 34d. The length L1 3 is the distance in the γ-axis direction between the + Y direction endpoint of the long side of the projection area 34b and the -Y direction endpoint of the long side of the projection area 34c. The length L 丨 4 is the distance in the γ-axis direction between the + Y-direction endpoint of the long side of the projection area 34b and the -Y-direction endpoint of the short side of the projection area 34e. Further, the division pattern 53 and the division pattern 54 are overlapped at the joint portion 58a, and the division pattern 54 and the division pattern 55 are overlapped at the junction portion 58b. The joint portions 5 8a and 5 8b each overlap the joint portions 36a to 36d of the projection area 34a to 34e at the same distance. FIG. 9 is a flowchart showing the exposure method of the present invention. Hereinafter, a first embodiment of the exposure method of the present invention will be described with reference to FIG. 9. The exposure device EX starts an exposure operation (stage SA0). First, the detector 41 provided on the substrate table P S T detects the illuminance (stage SAI) of the projection leads 34a to 36e. Specifically, the control device C 0 N T outputs an instruction to the filter driving section 2 1 D to shift the light beam from the light source 6 through the filter 21 with the maximum transmittance.

10803pif. ptd 第27頁 200304167 五、發明說明(23) 動遽光器2 1。當遽光器2 1移動時’從光源6經介橢圓鏡6 a 照射光束。照射之光束係透過渡光益2 1、半透明反射鏡 1 9、光罩Μ、投影光學系統PU〜PL5等後。到達基板機台 PST上。此時,光罩Μ係未支承於光罩機台MST Λ或者為^吏 在照明領域成為未形成圖案等之位置而退避同時,感光 基板Ρ也未支承於基板機台PST。 與此同時,檢測器4 1係移動於X軸方向及γ軸方向, 掃描各投影光學系統PL1〜PL5所對應之投影領域 3 4 a〜3 4 e。由掃描之檢測器4 1,順次檢測在各投影領域 3 4&〜346之照度及在境界部353〜3511之照度%&〜^。檢測器 41係使包含境界部3 5a〜3 5h及投影領域34a〜34e之照度的 檢出結果輸出於控制裝置C0NT。 同時,從光源6照射之光束,係由半透明反射鏡使其 一部分射入於檢測器2 0。檢測器2 〇係檢測入射光束之照 度,將照度之檢出結果輸出於控制裝置C0NT。控制裝置 C 0 N T係將以檢測器2 0、4 1所計測之各光路之照度及在境 界部3 5 a〜3 5 h之照度W a〜W h加以記憶。 控制裝置C0NT係依據檢測器41之檢出結果,為使各 投影領域34a〜34e之照度大略相等,且為使(|Wa-Wb|、 I .W e - W d | 、丨W e - W f丨)成為最小。由檢測器4 1 一面計測照度 面驅動各照明系統組件1 〇 a〜1 〇 e之每^一滤光器2 1。由 此,加以補正各光路之每一光束的光量。 尚且,此時,從光源6照射之光束係由半透明反射鏡 1 9使其一部分入射於檢測器2 〇,檢測器2 〇係檢測入射光10803pif. Ptd page 27 200304167 V. Description of the invention (23) Dynamic calender 21 When the calender 21 is moved ', the light beam is irradiated from the light source 6 through the elliptical mirror 6a. The irradiated light beam is transmitted through the transitional light beam 21, the translucent mirror 19, the mask M, and the projection optical system PU to PL5. Arrived on the substrate table PST. At this time, the reticle M is not supported on the reticle table MST Λ or it is evacuated to a position where no pattern or the like is formed in the lighting field. At the same time, the photosensitive substrate P is not supported on the pedestal table PST. At the same time, the detector 41 moves in the X-axis direction and the γ-axis direction, and scans the projection areas 3 4 a to 3 4 e corresponding to each of the projection optical systems PL1 to PL5. The scanned detector 41 sequentially detects the illuminance in each projection area 3 4 & ~ 346 and the illuminance% & ~ ^ in the boundary portion 353 ~ 3511. The detector 41 outputs the detection results of the illuminance including the boundary portions 35a to 35h and the projection areas 34a to 34e to the control device CONT. At the same time, a part of the light beam irradiated from the light source 6 is incident on the detector 20 by a semi-transparent mirror. The detector 20 detects the illuminance of the incident light beam and outputs the detection result of the illuminance to the control device CONT. The control device C 0 N T memorizes the illuminance of each optical path measured by the detectors 20 and 41 and the illuminances W a to W h at the border portion 35 a to 35 hours. The control device CONT is based on the detection result of the detector 41, in order to make the illuminance of each projection area 34a to 34e approximately equal, and to make (| Wa-Wb |, I .W e-W d |, 丨 W e-W f 丨) becomes the smallest. The detector 4 1 measures the illuminance while driving each of the lighting system components 10a to 10e. Therefore, the light amount of each light beam in each light path is corrected. Moreover, at this time, a part of the light beam irradiated from the light source 6 is incident on the detector 2 0 by the translucent mirror 19, and the detector 2 0 detects the incident light

200304167 五、發明說明(24) 束之照度’將檢出之照度信號輸出於控制袋置C〇nt。因 而’控制裝置C 0 N T係依據檢测β 2 0所檢出之光束照度, 為使此照度成為所定值也可控制濾光器驅動部2 1 D以調整 各光路之每一光量。 控制裝置C 0 Ν Τ係依據以檢測器4 1所檢測之在投影領 域3 4a〜34e之照度檢出結果與’要在感光基板Ρ上曝光之 曝光量的目標曝光量,以設定光罩Μ與感光基板P之同步 移動速度(階段SA2)。 即,在感光基板Ρ上之曝光量係照度與時間之積的關 係,按照檢測器4 1所檢測在感光基板Ρ上之照度與,預先 所設定的目標曝光量,以一義設定同步移動速度。例 如,在照度低之場合同步移動速度係設定於低速’在照 度高之場合同步移動速度係設定於高速。在此,在控制 裝置C0NT係記憶要取得所定光量的同步移動速度與照度 之關係(數據表)。控制裝置C〇NT係依據上述關係,設定 同步移動速度。 控制裝置CO NT係記憶關於所設定之同步移動速度的 資訊。 其次,使光罩Μ及感光基板P搬送支承於各光罩機台 MST及基板機台PST。控制裝置C0NT係使用定位系統(位置 檢測部)4 9 a、4 9 b,將光罩Μ與感光基板Ρ加以位置對準 (定位)(階段SA3)。 具體的係當使光罩Μ及感光基板Ρ搬送支承於各光罩 機台M S Τ及基板機台P S Τ時,由非感光於光阻之波長所構200304167 V. Description of the invention (24) Beam Illumination ’The detected illuminance signal is output to the control bag and placed at Cont. Therefore, the 'control device C 0 N T is based on the illuminance of the light beam detected by the detection β 2 0. In order to make this illuminance a predetermined value, the filter driving section 2 1 D may be controlled to adjust each light amount of each optical path. The control device C 0 ΝT sets the mask M according to the target exposure amount of the illuminance detection result in the projection area 3 4a to 34e detected by the detector 41 and the exposure amount to be exposed on the photosensitive substrate P. Movement speed in synchronization with the photosensitive substrate P (stage SA2). That is, the exposure amount on the photosensitive substrate P is a relationship between the product of the illuminance and time, and the synchronized moving speed is set in a uniform manner in accordance with the target exposure amount set in advance in accordance with the illuminance on the photosensitive substrate P detected by the detector 41. For example, when the illuminance is low, the synchronous moving speed is set to a low speed ', and when the illuminance is high, the synchronous moving speed is set to a high speed. Here, the control device CONT memorizes the relationship between the synchronous movement speed and the illuminance (data table) to obtain a predetermined light quantity. The control unit CONT sets the synchronous moving speed based on the above relationship. The control unit CO NT memorizes information on the set synchronized movement speed. Next, the photomask M and the photosensitive substrate P are transported and supported on each photomask table MST and the substrate table PST. The control unit CONT uses a positioning system (position detection section) 4 9 a and 4 9 b to position (position) the photomask M and the photosensitive substrate P (stage SA3). Specifically, when the reticle M and the photosensitive substrate P are transported and supported on each reticle table M S T and the substrate table P S T, they are constituted by a wavelength that is not photosensitive to the photoresist.

10803pif. ptd 第29頁 200304167 五、發明說明(25) 成的照明光係從定位系統4 9 a經介未圖示之反射鏡入射於 -Z軸方向。射出之照明光係照射於光罩μ之光罩定位標織 5 6a同時,透過光罩Μ經介在外側位置之投影光學系統7L1 照射於感光基板上之基板定位標織5 7 a。在基板定 '位標織 5 7 a所產生之光(反射光)係經介投影光學系統p l 1、光罩% 及反射鏡入射於定位系統4 9 a。一方面,在光罩定位標織 5 6a所反射之反射光也經介反射鏡入射於定位系統4 9 定位系統4 9 a係依據從光罩Μ及感光基板p之反射光加 以檢測各定位標織56a、57a之位置。具體的係,定位系 統4 9 a經介該疋位系統4 9 a中之未圖示的結像光學系統使 從光罩Μ及感光基板p之反射光以同時結像於二維[CD之攝 像面上,使光罩定位標織5 6a在基板定位標織5 7a之透過 部4 8重疊之攝像晝像加以畫像處理。定位系統4 9 a之檢出 結果係輸出於控制裝置CO NT,控制裝置CO NT係依據定位 系統4 9a之檢出結果,以求光罩定位標織5 6a與基板定位 標織5 7a之位置偏離量,即,光罩Μ與感光基板P之位置偏 離量。 其次,基板機台PST對光罩機台MST移動於+ Υ軸方 向。然而,與上述同樣順序,定位系統4 9 b檢測光罩定位 標織5 6 b及基板定立標織5 7 b。定位系統4 9 b之檢出結果係 輸出於控制裝置(:〇]^了,控制裝置〇01^11係依據定位系統496 之檢出結果以求光罩Μ與感光基板P之位置偏離量。控制 裝置CO NT係從上述所求之結果,使光罩機台MST或基板機 台PST微動,以進行光罩Μ與感光基板P之位置對準。尚10803pif. Ptd Page 29 200304167 V. Description of the invention (25) The illumination light formed from the positioning system 4 9 a is incident on the -Z axis through a mirror (not shown). The emitted illumination light is irradiated on the mask positioning mark 5 6a of the mask μ, and at the same time, the substrate positioning mark 5 7 a is irradiated on the photosensitive substrate through the mask M through the projection optical system 7L1 located at the outer position. The light (reflected light) generated by positioning the substrate on the substrate 5 7 a is incident on the positioning system 4 9 a via the projection optical system p l 1, the mask%, and the reflector. On the one hand, the reflected light reflected on the mask positioning mark 5 6a is also incident on the positioning system 4 9 through the dioptric mirror. The positioning system 4 9 a detects each positioning mark based on the reflected light from the mask M and the photosensitive substrate p. Weaving 56a, 57a. Specifically, a positioning optical system 4 9 a via an unillustrated image-forming optical system in the positioning system 4 9 a enables the reflected light from the photomask M and the photosensitive substrate p to be simultaneously imaged in a two-dimensional [CD On the imaging surface, a daylight image of the superimposed mask positioning mark 5 6a on the transmission portion 48 of the substrate positioning mark 5 7a is subjected to image processing. The detection result of the positioning system 4 9 a is output to the control device CO NT. The control device CO NT is based on the detection result of the positioning system 4 9a to find the positions of the mask positioning mark 5 6a and the substrate positioning mark 5 7a. The amount of deviation, that is, the amount of deviation between the position of the photomask M and the photosensitive substrate P. Next, the substrate table PST moves the mask table MST in the + Z axis direction. However, in the same procedure as above, the positioning system 4 9 b detects the mask positioning mark 5 6 b and the substrate setting mark 5 7 b. The detection result of the positioning system 4 9 b is output to the control device (: 〇) ^, and the control device 〇01 ^ 11 is based on the detection result of the positioning system 496 to determine the amount of position deviation between the photomask M and the photosensitive substrate P. From the result obtained above, the control device CO NT moves the photomask table MST or the substrate table PST slightly to align the position of the photomask M and the photosensitive substrate P.

10803pif.ptd 第30頁 200304167 五、發明說明(26) 且,此時之照明光係照射於光罩Μ之光罩定位標織5 6b同 時,透過光罩Μ經介在外側位置之投影光學系統P L 5照射 於感光基板Ρ上之基板定位標織57b。 更且,由與上述光罩定位標織56a、56b及基板定位 標織5 7a、5 7b之檢測順序同樣順序,一面使光罩機台MST 與基板機台PST以步位方式移動一面使光罩標織4 6a〜4 6d 與基板標織4 7 a〜4 7 d順次重疊,由定位系統4 9 a、4 9 b檢測 標織位置。定位系統49a、49b之檢出結果係輸出於控制 裝置C0NT,控制裝置C0NT係依據定位系統49a、49b之檢 出結果,以求光罩標織46a〜46d與基板標織47a〜47d之位 置偏離量。控制裝置CO NT係依據上述所求之結果,以檢 測光罩Μ與感光基板P之位置偏離量。 控制裝置C0NT係依據所求之位置偏離量,加以設定 關於光罩Μ與感光基板Ρ之相對位移、迴轉、倍率的補正 量(階段SA4)。 即’控制裝置C0NT係為光罩μ與感光基板ρ之位置對 準使用定位系統49a、49b加以檢測光罩標織46a〜46d及基 板}票織4,〜4 ?d之位置資訊,對所得之位置資訊進行統計 運鼻以求在感光基板P上所設定之全體圖案位 缺而, 依據所求之位置資訊與理想位置(理相 像特性,即,位移、迴轉、倍率,:格子)以未圖案之/ 量。然而,對先在感光基板ρ所形’進而感光基板P之變形 圖案能以所定之位置關係重疊,^以成之圖案,為使其次之 PU〜PL5所設之位移調整機構23、、求各投影光學系統 、避轉調整機構28、31,10803pif.ptd Page 30 200304167 V. Description of the invention (26) Moreover, at this time, the illumination light is irradiated on the mask positioning mark 5 6b of the mask M, and at the same time, the projection optical system PL is transmitted through the mask M through the outer position. 5 The substrate positioning mark 57b irradiated on the photosensitive substrate P. Furthermore, in the same order as the detection sequence of the mask positioning marks 56a, 56b and the substrate positioning marks 5 7a, 5 7b, the mask machine MST and the substrate machine PST are moved in a stepwise manner while the light is moved. The cover weaving 4 6a to 4 6d and the substrate weaving 4 7 a to 4 7 d sequentially overlap, and the positioning system 4 9 a and 4 9 b detect the position of the weaving. The detection results of the positioning systems 49a and 49b are output to the control device CONT. The control device C0NT is based on the detection results of the positioning systems 49a and 49b to determine the position deviation of the mask marks 46a ~ 46d and the substrate marks 47a ~ 47d. the amount. The control device CO NT detects the amount of positional deviation between the photomask M and the photosensitive substrate P based on the result obtained above. The controller CONT is set based on the required amount of positional deviation, and sets the correction amount for the relative displacement, rotation, and magnification of the mask M and the photosensitive substrate P (stage SA4). That is, the control device CONT is used to detect the position of the mask μ and the photosensitive substrate ρ using the positioning systems 49a and 49b to detect the position information of the mask mark weaving 46a ~ 46d and the substrate}. The position information is statistically collected to determine the position of the entire pattern set on the photosensitive substrate P. According to the required position information and the ideal position (physical and similar characteristics, that is, displacement, rotation, magnification, and grid), The amount of the pattern. However, the deformation patterns of the photosensitive substrate ρ and then of the photosensitive substrate P can be superimposed in a predetermined positional relationship, and the resulting pattern can be used as the displacement adjusting mechanism 23 provided for PU to PL5. Projection optical system, avoidance adjustment mechanism 28, 31,

10803pif. ptd 第31頁 20030416710803pif.ptd p. 31 200304167

圖及第 五、發明說明(27) 倍率調整機構2 7之各補正量,即求使用第5 A、5 B 6A、6B圖所說明之X34a、y34a、R34a,sk等。換言之 裝置C0NT係依據定位系統49a、49b之定位結果, 驅動裝置50A、50B、51A、51B、52之驅動量。 其次,控 制裝置C0NT係依據在階段SA2所設定< 移動速度’以求各投影光學系統PL卜PL5所設之位移歩 機構2 3,迴轉調整機構2 8、3 1,倍率調整機構2 7之整 正速度,即,求使用第5A、5B圖及第6A、6B圖所說日月 Vx34a、Vx34a、Vx34a、VSk 等(階段SA5)。 史 換言之,控制裝置C0NT係照所設定之同步移動迷 度,以設定驅動裝置50A、50B、51A、51B、52之骑_、Figure and Fifth, Description of the Invention (27) Each correction amount of the magnification adjustment mechanism 27 is to use X34a, y34a, R34a, sk, etc. described in Figures 5A, 5B 6A, and 6B. In other words, the device CONT is based on the positioning results of the positioning systems 49a, 49b, and the driving amounts of the driving devices 50A, 50B, 51A, 51B, 52. Secondly, the control device CONT is based on the "moving speed" set in stage SA2 to find the displacement mechanism 2 3, the rotation adjustment mechanism 2 8, 3 1 and the magnification adjustment mechanism 2 7 provided in each projection optical system PL and PL5. Correct the speed, that is, use the sun and moon Vx34a, Vx34a, Vx34a, VSk, etc. as shown in Figs. 5A and 5B and Figs. 6A and 6B (stage SA5). In other words, the control device CONT is based on the synchronized movement fan set to set the riding of the driving devices 50A, 50B, 51A, 51B, 52_,

如此,藉由按照同步移動速度加以設定驅動裝I 驅動速度,雖同步移動速度變化,對先在感光基板p ^ 所形 成之圖案,也可使其次之圖案以所定之位置關係重叠。 將此情形參照第1 0 A、1 0 B、1 0 C圖加以說明。 第10A圖係表示向箭頭印xl方向掃描之感光基板p之 同步移動速度V a與,按照感光基板p之變形的補正機構之 驅動速度Vd的關係為適當時之圖。尚且,如前述,感光 旱板P之變形係可依據定位系統29a、49b之檢出結果求 得。在第1 0 A圖,虛線所示之目標非線形補正量與實線所 示之實際非線補正量為一致。位置P1〜p5係與第13A圖同 樣,表示在掃描方向於感光基板P上以等間隔所設定之位 置。又,第1 0A圖之間隔Ta係表示對基準點(例如投影光In this way, by setting the driving speed of the driving device I according to the synchronous moving speed, although the synchronous moving speed is changed, the pattern formed on the photosensitive substrate p ^ can be overlapped with the second pattern in a predetermined positional relationship. This situation will be described with reference to Figs. 10A, 10B, and 10C. Fig. 10A is a diagram showing the relationship between the synchronous moving speed Va of the photosensitive substrate p scanned in the direction of the arrow xl and the driving speed Vd of the correction mechanism according to the deformation of the photosensitive substrate p as appropriate. In addition, as described above, the deformation of the photosensitive pad P can be obtained based on the detection results of the positioning systems 29a and 49b. In Fig. 10A, the target non-linear correction amount shown by the dashed line is consistent with the actual non-linear correction amount shown by the solid line. The positions P1 to p5 are the same as those shown in Fig. 13A, and represent positions set at regular intervals on the photosensitive substrate P in the scanning direction. In addition, the interval Ta in FIG. 10A represents a reference point (for example, a projection light).

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10803pif.ptd 第32頁 200304167 五、發明說明(28) 學系統之光軸)從位置P1(P2、P3、P4)通過至位置 P2(P3、P4、P5)通過之時間。即,在時間丁3為短的場合 係表示同步移動速度較快,在時間為長的場合,係表示 同步移動速度較慢。然而,補正機構之驅動開始點係感 光基板在知描方向移動所定量之時點,即,設定基準點 之各位置p 1〜P 5通過之時點。 如第1 0 B圖所示,例如光源6之輸出低降由檢測器4 1 檢出之照度低降,使同步移動速度Va變慢為Vb之場合 ^此時,時間Pb係比時間Pa長),按照同步移動速度几, 藉由使補正機構之驅動速度Vd變慢為Vdl,雖使補正機構 ,驅動開始點,設定於各位置P1〜P5通過基準點之時點, 可使虛線所示之目標非線形補正量與實線所示之實際非 線形補正量一致。 a ,方面’如第1 〇 C圖所示,例如由方法之變化光源6 V «也t外檢測器41之檢出照度上昇,使同步移動速度 门丰较之場合(此時,時間1^係比時間Ta短),按照 同步^移動、击 如 ^VA0 迷度vc ’藉由使補正機構之驅動速度比Vd變快 EM D R、= 使補正機構之驅動開始點,設定於各位置 2 t曰^喝基準點之時點’也可使虛線所示之目標非線形 補止重斑每《 ^ 在/、貫線所示之實際非線形補正量一致。 μ人m ^ ’於第1 0 A、1 0 B、1 〇 C圖,補正速度及補正量係 配兮问步教a i ▲ 说π向 移動逐次以連續值加以設定。藉此,由補正機 進行像特性之補正。 °且’替代按照同步移動速度設定補正速度,也可10803pif.ptd Page 32 200304167 V. Description of the invention (28) The optical axis of the learning system passes from position P1 (P2, P3, P4) to position P2 (P3, P4, P5). That is, when the time D3 is short, it means that the synchronous moving speed is fast, and when the time is long, it means that the synchronous moving speed is slow. However, the driving start point of the correction mechanism is a point in time when the light-sensitive substrate moves in the scanning direction, that is, a point in time when each position p 1 to P 5 of the set reference point passes. As shown in FIG. 10B, for example, when the output of the light source 6 is low and the illuminance detected by the detector 4 1 is low, the synchronous moving speed Va is slowed down to Vb. At this time, the time Pb is longer than the time Pa. ) According to the synchronous moving speed, the driving speed Vd of the correction mechanism is reduced to Vdl. Although the correction mechanism and the driving start point are set at the time when each position P1 ~ P5 passes the reference point, the indicated by the dotted line can be made. The target non-linear correction amount is consistent with the actual non-linear correction amount shown by the solid line. a, aspect ', as shown in FIG. 10C, for example, the light source 6 V is changed by the method, and the detected illuminance of the external detector 41 is increased, so that the synchronous movement speed is relatively large compared to the occasion (at this time, 1 ^ It is shorter than the time Ta), move in synchronization with ^ VA0, dangling vc 'by making the driving speed of the correction mechanism faster than Vd EM DR, = make the driving start point of the correction mechanism, set at 2 t at each position It can also make the target non-linear correction of heavy spots shown by the dotted line '^ the actual non-linear correction amount shown in /, through the line. μ person m ^ ′ In the 10th, 10th, 10th, and 10th C diagrams, the correction speed and the correction amount are matched with the step instruction a i ▲ said that the π-direction movement is successively set with a continuous value. Thereby, correction of image characteristics is performed by a correction machine. ° , ’Instead of setting the correction speed according to the synchronous moving speed,

10803pif.ptd 第33頁 200304167 五、發明說明(29) 按照同步移動速度,設定在感光基板P上之掃描方向的在 各位置之補正量。 又,在使用第1 0 A〜1 0 C圖之說明,補正機構之驅動開 始點雖係感光基板P向掃描方向移動所定量之時點’即’ 設定於各位置P 1〜P 5通過基準點之時點’也可預先求得驅 動裝置之時間的反應特性,按照此項求得之結果及同步 移動速度,以設定驅動補正機構之驅動開始點。 例如,同步移動速度變快時,驅動裝置之馬達由時 間反應之遲延有無法跟蹤於同步移動速度之虞。此種場 合,預先求得馬達之時間反應特性,例如同步移動速度 變成設定值以上時,控制裝置C0NT係依據上述求得之時 間反應特性,對馬達使發出驅動開始信號之時序,設定 在比各位置P 1〜P 5通過基準點之時點較提前之時點。藉 此,雖同步移動速度較快時,也可由補正機構圓滑進行 像特性之補正。 如以上依據同步移動速度設定補正機構之補正速度 及補正量時,可以實際對感光基板P進行曝光處理。 首先,進行對應於分割圖案5 3部分之曝光處理。 此種場合,對應於投影光學系統PL5之照明系統組件 1 0 e的照明快門1 2係經介快門驅動部1 2 D插入光路中,如 第8圖所示,對應於投影領域3 4 e之光路的照明光係加以 遮光。此時,照明系統組件1 0a〜1 Od之照明快門1 2係開放 各光路。藉此,在光罩Μ,設置包含周邊電路4 5a與像素 圖案4 4之一部分的Y軸方向長度為L1 2之照明領域(階段10803pif.ptd Page 33 200304167 V. Description of the invention (29) Set the correction amount at each position in the scanning direction on the photosensitive substrate P according to the synchronous moving speed. In addition, in the description using the drawings Nos. 10A to 10C, although the driving start point of the correction mechanism is a fixed time point when the photosensitive substrate P moves in the scanning direction, that is, is set at each position P1 to P5 passing the reference point At the point of time, the time response characteristic of the driving device can also be obtained in advance, and the result of this determination and the synchronous moving speed can be used to set the driving start point of the driving correction mechanism. For example, when the synchronous moving speed becomes faster, the delay of the motor response of the drive device from time may not be able to track the synchronous moving speed. In this case, the time response characteristic of the motor is obtained in advance. For example, when the synchronous moving speed becomes higher than the set value, the control device C0NT uses the time response characteristic obtained above to set the timing of the drive start signal to the motor. The time points at which the positions P 1 to P 5 pass the reference point are earlier than the time point. Therefore, even when the synchronous moving speed is fast, the image characteristics can be corrected smoothly by the correction mechanism. As described above, when the correction speed and the correction amount of the correction mechanism are set based on the synchronous moving speed, the exposure processing can be actually performed on the photosensitive substrate P. First, exposure processing corresponding to the 53 parts of the division pattern is performed. In this case, the lighting shutter 1 2 corresponding to the lighting system component 1 0 e of the projection optical system PL5 is inserted into the optical path via the shutter driving unit 1 2 D, as shown in FIG. 8, corresponding to the projection area 3 4 e. The illuminating light of the optical path is blocked. At this time, the lighting shutters 12 of the lighting system components 10a to 10d open each optical path. Thereby, in the mask M, an illumination area (stage 1) in which the length in the Y-axis direction including a part of the peripheral circuit 45a and the pixel pattern 44 is set to L1 2 is provided.

10803pif. ptd 第34頁 200304167 五、發明說明(30) SA6) 〇 其次,控制裝置C0NT係使光罩機台MST所支承之光罩 Μ與基板機台PST所支承之感光基板P以同步移動於X軸方 向進行第一次之掃描曝光(階段SA7)。 由此’如第8圖所示,在感光基板Ρ上,使對應於由 投影光學系統PL1、PL2、PL3、PL4所設定之投影領域的 分割圖案5 3加以曝光。 在此,掃描曝光時之同步移動速度係在階段S A 2所設 定之值。又,掃描曝光係由按照同步移動速度加以設定 驅動速度或驅動量之補正機構(位移調整機構23、迴轉調 整機構28、31、倍率調整機構27) —面補正像特性(位 移、迴轉、倍率)一面進行掃描曝光。此時之補正機構之 驅動速度或驅動量係在階段SA4或階段SA5加以設定。 其次,為進行第二次掃描曝光,控制裝置C〇NT係使 基板機台PST對所定位置加以對準位置。具體的係控制裝 置C0NT使基板機台PS 丁以户斤定距離PS1步位移動於+ Y方向 同時進行位置之微調整。此距離PS1係相當於在投影領域 之Y軸方向的間距L 3之三個分。 又,控制裝置C0NT係使光罩機台MST對所定位置加以 對準位置。具體的係,控制裝置C0NT對在感光基板ρ上之 圖案接合部58a,為使像素圖案50成為連續起見,使光罩 機台MST以所定距離位移於Y軸方向(階段SA8)。 控制裝置C0NT係以投影領域34b、34c進行第二次掃 描曝光之關係,加以補正此投影領域34b、34c之照度。10803pif. Ptd Page 34 200304167 V. Description of the invention (30) SA6) 〇 Secondly, the control device C0NT moves the photomask M supported by the photomask table MST and the photosensitive substrate P supported by the substrate table PST in synchronization with each other. The first scan exposure is performed in the X-axis direction (stage SA7). Thus, as shown in Fig. 8, on the photosensitive substrate P, the division pattern 53 corresponding to the projection area set by the projection optical systems PL1, PL2, PL3, and PL4 is exposed. Here, the synchronous moving speed at the time of scanning exposure is a value set in step S A 2. Scanning exposure is based on a correction mechanism (displacement adjustment mechanism 23, rotation adjustment mechanism 28, 31, and magnification adjustment mechanism 27) that sets the driving speed or amount in accordance with the synchronous moving speed. — Surface correction image characteristics (displacement, rotation, and magnification) Scan exposure is performed on one side. The driving speed or driving amount of the correction mechanism at this time is set in stage SA4 or stage SA5. Next, in order to perform the second scanning exposure, the controller CONT causes the substrate table PST to align the predetermined position. The specific system control device CONT enables the substrate machine PS to move at a fixed distance PS1 step in the + Y direction at the same time to perform fine adjustment of the position. This distance PS1 corresponds to three points of the distance L 3 in the Y-axis direction of the projection area. In addition, the control unit CONT causes the mask table MST to align the predetermined position. Specifically, in order to make the pixel pattern 50 continuous, the control device CONT moves the mask unit MST to the Y-axis direction by a predetermined distance to the pattern bonding portion 58a on the photosensitive substrate ρ (stage SA8). The control device CONT uses the relationship between the second scanning exposure of the projection areas 34b and 34c to correct the illuminance of the projection areas 34b and 34c.

10803pif.ptd 第35頁 200304167 五、發明說明(31) 更且’控制裝置C0NT係對投影領域34d與投影領域34b之 照度加以補正。其中,投影領域34d係在第一次掃描曝光 時使感光基板P之接合部5 8 a加以曝光,投影領域3 4 b係在 弟二次知描曝光時將要使接合部5 8 a加以曝光。具體的 係,為使投影領域3 4 b、3 4 c之端部3 5 c、3 5 d間之照度差 (丨W c - W a丨)’及第一次掃描曝光時之投影領域3 4 d的端部 3 5 g與第二次掃描曝光時之投影領域3 4 b的端部3 5 b間之照 f差(丨Wg-Wb丨)成為最小起見,控制裝置c〇NT係對各照明 系統組件1 Ob、1 Oc以檢測器20 —面計測各光路之照度一 面驅動濾光器21。由此,補正各光路之光束的光量。 控制裝置C0NT係使對應於投影光學系統pLi、pL4、 p L 5之照明系統組件1 〇 a、1 〇 d、1 0 e的照明快門1 2經介快 門驅動部1 2D插入光路中,對各投影領域34a、34d、34e 之光路的照明光係加以遮光(各照明系統組件丨〇 b、1 〇 c之 =明快門1 2係使各光路開放)。由此,在光罩μ係設定包 含像素圖案4 4之一部分在γ軸方向之長度為L丨3的照明領 域(階段SA9)。 控制裝置C0NT係使光罩μ與感光基板p再度以同步移 動於X軸方向加以進行第二次掃描曝光(階段SA10)。 φ此’如第8圖所示,在感光基板p上,使對應於由 投,影光學系統PL2、PL3之投影領域34b、34c所設定之照 明,域的分割圖案5 4,在接合部5 8a與分割圖案5 3以重覆 狀態加以曝光。 在此’掃描曝光時之同步移動速度係在階段SA 2所設10803pif.ptd Page 35 200304167 V. Description of the invention (31) Furthermore, the 'control device CONT' corrects the illumination in the projection area 34d and the projection area 34b. Among them, the projection area 34d is to expose the bonding portion 5 8a of the photosensitive substrate P during the first scanning exposure, and the projection area 34b is to expose the bonding portion 5 8a during the second exposure. Specifically, in order to make the projection areas 3 4 b, 3 4 c ends 3 5 c, 3 5 d illuminance difference (丨 W c-W a 丨) ′ and the projection area 3 during the first scanning exposure 3 The difference in illumination f (丨 Wg-Wb 丨) between the end 3 4 g of 4 d and the projection area 3 4 b at the time of the second scanning exposure is minimized. For each of the lighting system components 1 Ob and 1 Oc, the detector 20 is used to drive the filter 21 while measuring the illuminance of each optical path. Thereby, the light quantity of the light beam of each optical path is corrected. The control device CONT is a lighting system module 10a, 10d, and 10e corresponding to the projection optical systems pLi, pL4, and pL5. The lighting shutters 12 are inserted into the optical path via the shutter driving unit 12D, and The illumination light of the light paths of the projection areas 34a, 34d, and 34e is shielded (the light system components 丨 0b and 10c = the bright shutter 1 2 series make each light path open). As a result, the illuminating area in which the length of the part including the pixel pattern 4 4 in the γ-axis direction is set to L3 in the mask µ (step SA9). The control unit CONT causes the photomask µ and the photosensitive substrate p to move synchronously in the X-axis direction again for a second scanning exposure (stage SA10). φThis', as shown in FIG. 8, on the photosensitive substrate p, the division pattern 5 4 of the domain is illuminated corresponding to the illumination set by the projection areas 34 b and 34 c of the projection optical systems PL 2 and PL 3. 8a and the division pattern 5 3 are exposed in a repeated state. Here, the synchronous moving speed during scanning exposure is set in stage SA 2

200304167 五、發明說明(32) 定之值。又,掃描曝光係由按照同步移動速度加以設定 驅動速度或驅動量之補正機構(位移調整機構23、迴轉調 整機構28、31,倍率調整機構27) —面補正像特性(位 移、迴轉、倍率)一面進行掃描曝光。此時之補正機構的 驅動速度或驅動量係在階段SA4或階段SA5所設定。 其次,控制裝置C0NT係使基板機台PST以距離PS2分 步位移動於+ Y方向。此距離PS2係相當於投影領域之Y軸 方向的間距L3之二個分。又,控制裝置CO NT對感光基板P 上之圖案接合部58b,為使像素圖案50成為連續起見,使 光罩機台MST對第一次掃描曝光時之光罩Μ的位置,以所 定距離位移於Υ軸方向(階段SA1 1 )。 控制裝置CONT係以投影領域34b〜34e進行第三次掃描 曝光之關係,加以補正該投影領域34b〜3 4e之照度。更 且,控制裝置CO NT係加以補正投影領域3 4c與投影領域 3 4 b之照度。其中’投影領域3 4 c係在第二次掃描曝光時 使感光基板P之接合部5 8b加以曝光,投影領域3 4b係將在 第三次掃描曝光時使接合部5 8 b加以曝光。具體的係為使 投影領域34b〜34e之端部35c、35d間、端部35e、35f間、 端部3 5g、3 5b 間之照度差(丨 Wc-Wd| 、丨 We-Wf| 、|Wg-Wh|) 及第二次掃描曝光時之投影領域34C之端部35e與第三次 掃描曝光時之投影領域3 4 b之端部3 5 b間之照度差 (I Wc-Wb | )成為最小起見,控制裝置c〇NT係對各照明系統 組件1 0 b〜1 0 e以檢測器2 0 —面計測各光路之光束的照度一 面驅動濾光器21。由此,補正各光路之光束的光量。200304167 V. Description of Invention (32) In addition, the scanning exposure is based on a correction mechanism (displacement adjustment mechanism 23, rotation adjustment mechanism 28, 31, magnification adjustment mechanism 27) that sets the driving speed or amount in accordance with the synchronous moving speed—surface correction image characteristics (displacement, rotation, magnification) Scan exposure is performed on one side. The driving speed or driving amount of the correction mechanism at this time is set in stage SA4 or stage SA5. Next, the control device CONT moves the substrate table PST in the + Y direction in steps of PS2. This distance PS2 corresponds to two points of the distance L3 in the Y-axis direction of the projection area. In addition, the control device CO NT causes the mask pattern MST to position the mask M at the first scanning exposure on the pattern bonding portion 58b on the photosensitive substrate P at a predetermined distance to make the pixel pattern 50 continuous. Displacement in the direction of the Z axis (stage SA1 1). The control device CONT performs the relationship of the third scanning exposure in the projection areas 34b to 34e, and corrects the illuminance in the projection areas 34b to 34e. Furthermore, the control device CO NT corrects the illuminance in the projection area 34c and the projection area 34b. Among them, the projection area 3 4 c is to expose the bonding portion 5 8b of the photosensitive substrate P during the second scanning exposure, and the projection area 3 4b is to expose the bonding portion 5 8 b during the third scanning exposure. The specific system is to make the illuminance difference between the end portions 35c and 35d, between the end portions 35e and 35f, and between the end portions 35g and 35b of the projection area 34b to 34e (丨 Wc-Wd |, 丨 We-Wf |, | Wg-Wh |) and the illuminance difference between the end 35e of the projection area 34C at the second scanning exposure and the end 3 3 b of the projection area 3 4 b at the third scanning exposure (I Wc-Wb |) As a minimum, the control device cONT drives the filter 21 while measuring the illuminance of the light beams of each optical path with the detector 20 for each of the lighting system components 10b to 10e. Thereby, the light quantity of the light beam of each optical path is corrected.

10803pi f. ptd 第37頁 200304167 五、發明說明(33) 控制裝置C0NT係使對應於投影光學系統。PL1之照明 系統組件1 0 a之照明快門1 2,經介快門驅動部1 6插入於光 路中,如第8圖所示,對投影領域3 4 a之光路的照明光係 加以遮光(照明系統組件1 〇 b〜1 〇 e之照明快門1 2係使各光 路開放)。由此,在光罩Μ係設定包含周邊電路圖案45b與 像素圖案4 4之一部分γ軸方向之長度為L 1 4的照明領域(階 段SA1 2)。 控制裝置C0NT係使光罩Μ與感光基板P再度以同步移 動於X軸方向進行第三掃描曝光(階段S A 1 3 )。 由此,如第8圖所示,在感光基板p上,使對應於由投 影光學系統P L 2〜P L 5之投影領域3 4 b〜3 4 e所設定之照明領 域的分割圖案55,在接合部58b與分割圖案54以重覆狀態 加以曝光。 在此,掃描曝光時之同步移動速度係在階段SA 2所設 定之值。又,掃描曝光係由按照同步移動速度加以設定 驅動速度或驅動量之補正機構(位移調整機構2 3、迴轉調 整機構2 8、3 1倍率調整機構2 7 ) 一面補正像特性(位移、 迴轉、倍率)一面進行掃描曝光。此時之補正機構的驅動 速度或驅動量係在階段SA4或階段SA5所設定。 〆 如此,使用一片之光罩Μ,對在比該光罩Μ較大之感 光拳板Ρ的接合曝光可加以完成(階段SA1 4)。 如以上說明,按照光罩M與感光基板p之同步移動速 度,加以設定補正投影在感光基板p之圖案的像特性所需 之補正速度或補正量的關係,雖同步移動速度變化也可10803pi f. Ptd page 37 200304167 V. Description of the invention (33) The control device CONT corresponds to the projection optical system. PL1's lighting system component 1 0 a's lighting shutter 12 is inserted into the optical path via the shutter driving section 16 and as shown in FIG. 8, the lighting system of the optical path 3 4 a in the projection area is shielded (lighting system The illumination shutters 12 and 2 of the components 10b to 10e open each light path). As a result, a lighting area having a length L 1 4 in the γ-axis direction including a part of the peripheral circuit pattern 45b and the pixel pattern 44 is set in the mask M (step SA1 2). The control device CONT causes the photomask M and the photosensitive substrate P to move synchronously in the X-axis direction for a third scanning exposure (step S A 1 3). Therefore, as shown in FIG. 8, on the photosensitive substrate p, the division patterns 55 corresponding to the illumination areas set by the projection areas 3 4 b to 3 4 e of the projection optical systems PL 2 to PL 5 are bonded together. The portion 58b and the division pattern 54 are exposed in a repeated state. Here, the synchronous moving speed at the time of scanning exposure is a value set in stage SA2. In addition, the scanning exposure is performed by a correction mechanism (displacement adjustment mechanism 2 3, rotation adjustment mechanism 2 8, 3, 1 magnification adjustment mechanism 2 7) that sets a driving speed or a driving amount according to the synchronous moving speed. One side corrects image characteristics (displacement, rotation, Magnification). The driving speed or driving amount of the correction mechanism at this time is set in stage SA4 or stage SA5.如此 In this way, using a mask M of one piece, the exposure of the bonding of the light fist P which is larger than the mask M can be completed (stage SA1 4). As described above, the relationship between the correction speed or the amount required to correct the image characteristics of the pattern projected on the photosensitive substrate p is set according to the synchronous moving speed of the mask M and the photosensitive substrate p. Although the synchronous moving speed may be changed,

l〇803pif. Ptd 第38頁 200304167 五、發明說明(34) 使目標補正量與實際補正量一致。因而,可使圖案在所 定之位置關係以良好精度重疊,能進行優良精度之曝光 處理。 在此,在本實施例之曝光方法係一面使光罩Μ與感光 基板Ρ以同步移動一面曝光的掃描曝光之關係,僅以設置 位移調整機構為補正機構,藉由一面以此位移調整機構 補正像之位置一面進行掃描曝光,可進行非線形補正。 另一方面,各設置位移調整機構、迴轉調整機構、倍率 調整機構為補正機構,藉由一面以此等三調整機構補正 像之位置或大小(形狀)一面進行掃描曝光,可進行精度 更優良之非線形補正。 尚且,在上述實施例的曝光裝置ΕΧ係具有互相鄰接 之複數光學系統為所謂多透鏡掃描型曝光裝置,對於投 影光學系統為一個的掃描型曝光裝置,也可加以適用本 發明。 尚且,在上述實施例,對一次之掃描曝光的同步移動 速度雖係以等速加以說明,也可使用連續變化。補正機 構係按照同步移動速度之變化,藉由使補正速度及補正 量之任何一方設定在逐次連續值,可進行像之非線形補 正。 其次,對本發明之曝光方法的第二實施例,參照第 1 1圖加以說明。 曝光裝置ΕΧ開始曝光動作(階段SB0)。 在各別光罩機台MST及基板機台PST使光罩Μ及感光基〇803pif. Ptd Page 38 200304167 V. Description of the invention (34) Make the target correction amount consistent with the actual correction amount. Therefore, the patterns can be superimposed at a predetermined positional relationship with good accuracy, and exposure processing with excellent accuracy can be performed. Here, the exposure method in this embodiment is a scanning exposure relationship in which the photomask M and the photosensitive substrate P are moved synchronously while exposing, and only the displacement adjustment mechanism is set as a correction mechanism, and the displacement adjustment mechanism is used to correct Scanning exposure is performed on the side of the image for non-linear correction. On the other hand, each of the displacement adjustment mechanism, rotation adjustment mechanism, and magnification adjustment mechanism is provided as a correction mechanism. By performing scanning and exposure while correcting the position or size (shape) of the image with these three adjustment mechanisms, it is possible to perform more accurate precision. Non-linear correction. In addition, the exposure apparatus EX of the above embodiment is a so-called multi-lens scanning type exposure apparatus having a plurality of adjacent optical systems adjacent to each other. The present invention can also be applied to a scanning type exposure apparatus having a single projection optical system. Moreover, in the above-mentioned embodiment, although the synchronous moving speed of one scanning exposure is described at a constant speed, a continuous change may be used. The correction mechanism can perform non-linear correction of the image by setting one of the correction speed and the correction amount to a continuous value in accordance with the change of the synchronous moving speed. Next, a second embodiment of the exposure method of the present invention will be described with reference to FIG. 11. The exposure device EX starts an exposure operation (stage SB0). The reticle M and the photoreceptor are made on the respective reticle table MST and the substrate table PST.

10803pif. ptd 第39頁 200304167 五、發明說明(35) 板P搬送,支承後,控制裝置C0NT係使用定位系統(位置 檢測部)4 9 a、4 9 b加以檢測光罩標纖4 6 a〜4 6 d及基板標織 47a〜47d,依據此檢出結果以求感光基板P之圖案的位 移,迴轉、倍率、進而感光基板P之變形量(階段SB1 )。 其次,控制裝置CO NT係按照上述定位系統49a、49b 之定位結果,即,光罩Μ或感光基板P之位置,加以設定 驅動補正機構之驅動裝置的驅動速度或驅動量(階段 SB2)。 然而,控制裝置C0NT係一面依據按照光罩Μ或感光基 板Ρ之位置所設定之補正速度或補正量加以補正像特性, 一面使光罩Μ與感光基板Ρ以同步移動使光罩Μ之圖案投影 曝光於感光基板Ρ。 此時,光罩機台MST及基板機台PST在同步移動方向 之移動速度(掃描速度)係由速度檢測裝置7 1、7 2加以檢 測。速度檢測裝置7 1、7 2之檢出結果係輸出於控制裝置 C0NT ° 又,對應於各投影領域3 4 a〜3 4 e之每一光路的照度在 掃描曝光中係由設在各照明系統組件1 0 a〜1 0 e之檢測器2 0 加以檢測。檢測器2 0之檢出結果係輸出於控制裝置 CQNT( P皆段SB3)。 在此,由任何理由光源6之輸出低降,由檢測器2 〇所 檢出之照度低下時。低下之照度資訊係經介檢測器2 〇輸 出於控制裝置CO NT,控制裝置C0NT係依據檢測器2〇之檢 出照度負訊’為使感光基板P能以所定曝光量加以曝光而10803pif. Ptd Page 39 200304167 V. Description of the invention (35) After the board P is transported and supported, the control device C0NT uses a positioning system (position detection section) 4 9 a, 4 9 b to detect the mask mark fiber 4 6 a ~ 4 6 d and substrate weaving 47a to 47d. Based on this detection result, the pattern displacement, rotation, magnification, and further the deformation amount of the photosensitive substrate P are determined (stage SB1). Next, the control device CO NT is set according to the positioning results of the positioning systems 49a and 49b, that is, the position of the photomask M or the photosensitive substrate P, to set the driving speed or driving amount of the driving device that drives the correction mechanism (stage SB2). However, the control device CONT corrects the image characteristics based on the correction speed or amount set according to the position of the mask M or the position of the photosensitive substrate P, and simultaneously projects the pattern of the mask M and the photosensitive substrate P to project the pattern of the mask M Exposure to the photosensitive substrate P. At this time, the moving speed (scanning speed) of the mask table MST and the substrate table PST in the synchronous moving direction is detected by the speed detection devices 7 1 and 7 2. The detection results of the speed detection devices 7 1 and 7 2 are output to the control device CONT °, and the illuminance corresponding to each light path of each projection area 3 4 a to 3 4 e is set in each lighting system during scanning exposure. The detectors 20 of the components 10a to 10e are detected. The detection result of the detector 20 is output to the control device CQNT (P is all SB3). Here, when the output of the light source 6 is lowered for any reason and the illuminance detected by the detector 20 is low. The low illuminance information is input via the detector 2 0. The control device CO NT is based on the negative illuminance detected by the detector 2 0. In order to make the photosensitive substrate P be exposed at a predetermined exposure amount,

10803pif. ptd 第40頁 200304167 五、發明說明(36) 將基板機台PST及光罩機台MST之掃描速度降低起見,加 以設定新掃描速度(階段SB4)。 尚且’此新設定之基板機台PST及光罩機台MST之掃 描速度係依據預先記憶於控制裝置C〇NT之目標曝光量與 照度和掃描速度的關係(數據表)加以設定。 ^ 降低速度之基板機台PST及光罩機台MST在同步移動方 向之速度資訊係由速度檢測裝置7 1、7 2加以檢測。速度 檢測裝置7 1、7 2之檢出結果係輸出於控制裝置c 〇 N T,控 制裝置C0NT係按照基板機台PST及光罩機台MST之速度變 化,加以調整補正機構之補正速度及補正量(階段SB5)。 即’速度檢測裝置7 1、7 2之檢出結果例如從V a降低至 Vb時’控制裝置C0NT係使補正機構之驅動速度從Vd變化 至Vdl。尚且此時控制裝置c〇NT使補正機構之驅動速度從 Vd至Vdl變更之際,不以步位變化,而配合同步移動以逐 次連續值加以變化。 一方面,速度檢測裝置71、72之檢出結果從Va向Vc上 昇時’控制裝置C0NT係使補正機構之驅動速度從Vd變化 至Vd2。此時控制裝置c〇NT使補正機構之驅動速度從Vd變 更至Vd2之際,不以步位變化,而配合同步移動以逐次連 續值加以變化。 如此,完成使用光罩Μ,對感光基板P之接合曝光(階 段BS6) 〇 如以上之說明,也可使實際之同步移動速度以速度檢 測裝置71、72(參照第1圖)檢測,控制裝置C0NT係依據速10803pif. Ptd Page 40 200304167 V. Description of the invention (36) In order to reduce the scanning speed of the substrate machine PST and the mask machine MST, a new scanning speed is set (stage SB4). Also, the scanning speed of the newly set substrate machine PST and photomask machine MST is set based on the relationship between the target exposure amount and the illuminance and scanning speed (data table) stored in the control device CONT beforehand. ^ The speed information of the substrate machine PST and the mask machine MST that reduce the speed in the synchronous movement direction are detected by the speed detection devices 7 1 and 7 2. The detection results of the speed detection devices 7 1 and 7 2 are output to the control device c 0NT. The control device C0NT adjusts the correction speed and amount of the correction mechanism according to the speed change of the substrate table PST and the mask table MST. (Stage SB5). That is, when the detection results of the "speed detection devices 7 1 and 7 2 decrease from Va to Vb", the control device CONT changes the driving speed of the correction mechanism from Vd to Vdl. At this time, when the control device cONT changes the driving speed of the correction mechanism from Vd to Vdl, it does not change in steps, but cooperates with synchronous movement to change successively continuously. On the one hand, when the detection results of the speed detection devices 71 and 72 are raised from Va to Vc ', the control device CONT changes the driving speed of the correction mechanism from Vd to Vd2. At this time, when the control device cONT changes the driving speed of the correction mechanism from Vd to Vd2, it does not change in steps, but changes in sequence with the synchronous movement. In this way, the photomask M is used to complete the joint exposure of the photosensitive substrate P (stage BS6). As described above, the actual synchronous moving speed can also be detected by the speed detection devices 71 and 72 (see FIG. 1), and the control device C0NT is based on speed

10803pif. ptd 第41頁 200304167 五、發明說明(37) 度檢出裝置71、72之檢出結果以控制補正機構之驅動速 度。 尚且,在上述各實施例之補正機構雖係為平行平面玻 璃板或直角棱鏡等,並非限定於此。例如對位移調整機 構,使一對偏角棱鏡設置於曝光光之光路上,藉由使此 在Z軸周圍迴轉,或在Z軸方向移動,也可調整在感光基 板P上之像的位置。 尚且,曝光裝置EX之用途並不限定於在角型玻璃板使 液晶顯不元件圖案加以曝光的液晶用之曝光裝置,例 如,也廣加適用於半導體製造用之曝光裝置或製造薄膜 磁頭之曝光裝置。 本實施例之曝光裝置E X的光源係不僅使用g線 (436nm)、h 線(405nm)、i 線(365nm)、也可使用 ArF 準分 子雷射(excimer laser)(193nm)、F2 雷射(157nm)。 投影光學系統P L之倍率係不僅為等倍系列,也可為縮 小糸列及擴大糸列之任何者。 投影光學系統PL在使用準分子雷射等之遠紫外線之場 合玻璃材料係使用能透射遠紫外線之石英或螢石等,使 用F2雷射之場合係為反射折射系統或折射系統之光學系 辨。/ ’ •在基板機台PST或光罩機台MST使用線型馬達(丨inear motor)之場合,係可採用,使用氣浮轴承(air bearing) 之氣浮型及使用洛倫茲力(L〇rentz force)或電抗力 (reactance force)之磁浮型的任何者。又,機台係可用10803pif. Ptd Page 41 200304167 V. Description of the invention (37) The detection results of the degree detection devices 71 and 72 are used to control the driving speed of the correction mechanism. In addition, although the correction mechanism in each of the above embodiments is a parallel plane glass plate or a right-angle prism, it is not limited to this. For example, for a displacement adjustment mechanism, a pair of deflection prisms are set on the light path of the exposure light, and by rotating this around the Z axis or moving in the Z axis direction, the position of the image on the photosensitive substrate P can also be adjusted. Moreover, the use of the exposure device EX is not limited to an exposure device for a liquid crystal that exposes a liquid crystal display element pattern on a corner glass plate. For example, an exposure device suitable for semiconductor manufacturing or a thin film magnetic head is widely used Device. The light source of the exposure device EX of this embodiment uses not only g-line (436nm), h-line (405nm), i-line (365nm), but also ArF excimer laser (193nm), F2 laser ( 157nm). The magnification of the projection optical system PL is not only a series of equal magnifications, but also any one of a reduction queue and an enlarged queue. The projection optical system PL uses far-ultraviolet light such as excimer laser, and the field glass material is quartz or fluorite, which can transmit far-ultraviolet light. The F2 laser is used as the optical system of the refracting or refracting system. / '• In the case of substrate machine PST or photomask machine MST using linear motor (丨 inear motor), it can be used, using air bearing air bearing type and using Lorentz force (L〇 rentz force) or reactance (reactionance force) of any magnetic levitation type. Also, the machine system is available

10803pif. ptd 第42頁 20030416710803pif.ptd p. 42 200304167

五、發明說明(38) 沿導執移動之類型,也可用不設導執之無導軌型。 機台之驅動裝置使用平面馬達之場合,使磁鐵組件與銜 鐵組件之任何一方接續於機台,使磁鐵組件與銜鐵^且^ 之他方裝設於機台之移動面側(底盤)即可。 由基板機台PST之移動所產生之反作用力,係如日本 特開平8 - 1 6 647 5號公報所述,也可使用框架構件以機 方式導向於大地。本發明係也可適用於具有此項結構 曝光裝置。 由光罩機台MST之移動所產生之反作用力係如日本專 ίί8^330 224號公報所述,也可使用框架構件以機械方 ίΠ於大地。*發明係'也可…具有此項結構:: 開 如以 申請 統, 立製 光學 統進 成電 組立 配線 成為 之個 程完 上所 案之 以保 造。 系統 行達 精度 製程 接連 曝光 個組 成後 述, 專利 持所 為確 進行 成機 所需 係包 ,氣 裝置 立製 ,進 桊甲請 申請範 定之機 保此等 達成光 械精度 之調整 含各種 壓管路 之組立 程。各 行總合 案的 圍所 械精 各種 學精 所需 。從 子系 之配 製程 種子 調整 實施 舉之 度, 精度 度所 之調 各種 統相 管接 前, 糸統 ,以 例之 各構 電精 ,在 需之 整, 子系 互之 連等 不需 之構 確保 曝光裝 成要素 度,光 其組立 調整, 對各種 統構成 ,機械 。在從 待言係 成曝光 構成為 置係 的各 學精 前後 對各 電系 為曝 接連 各種 具有 裝置 曝光 使包 種子 度加 ,對 種機 統進 光裝 ,電 子系 各子 的組 裝置 含本 系 以組 各種 械系 行達 置之 路之 統構 系統 立製 全體V. Description of the invention (38) The type of moving along the guide can also be used without guide. When a plane motor is used as the driving device of the machine, either one of the magnet assembly and the armature assembly is connected to the machine, and the other of the magnet assembly and the armature ^ and ^ can be installed on the moving surface side (chassis) of the machine. The reaction force generated by the movement of the substrate table PST is as described in Japanese Patent Application Laid-Open No. 8-1 647 647 5, and the frame member can also be used to guide the ground mechanically. The present invention is also applicable to an exposure apparatus having this structure. The reaction force generated by the movement of the mask machine MST is described in Japanese Patent No. 8 ^ 330 224, and a frame member can also be used to mechanically apply the ground. * Invention Department 'can also have this structure: Open the application system, set up the optical system into the electricity, set up the wiring, and complete the project to ensure the manufacturing. The system's precision manufacturing process successively exposes the composition as described below. The patent holders need to complete the package required to complete the machine. The gas device is built. If you want to apply for a machine, please apply for a standard machine to ensure that the optical accuracy is adjusted. The set up process. The perimeter of each bank's joint project requires various academic skills. The degree of implementation of the seed adjustment process from the preparation of the sub-system, the accuracy of the adjustment of various systems before the control, the system, for example, the structure of the fine, the integration of the needs, the interconnection of the sub-system is not required The structure guarantees the exposure factor, adjusts its composition, and adjusts to various systems and mechanisms. Before and after the exposure from the speech system to the composition of each study, each electrical system is exposed to various types of devices with exposure to increase the seed package, the seed machine is integrated into the optical system, and the electronic system's sub-devices are included. The system is organized by the organization system of the various roads

200304167 五、發明說明(39) 之各種精度。尚且,曝光裝置之製造係以在溫度及清淨 度經管理之淨化室進行為宜。 半導體元件係如第1 2圖所示,係經進行元件機能、性能 設計之階段2 0 1,依據此設計階段的製作光罩(光栅)之階 段2 0 2,製造元件基材的基板(晶圓、玻璃板)之階段 2 0 3,由上述實施例之曝光裝置使光栅之圖案曝光於晶圓 之晶圓處理階段2 0 4,元件之組立階段(包含切割 (dicing)製程、結合(bonding)製程;封裝(packaging) 製程)2 0 5,檢查階段2 0 6等加以製造。 雖然本發明已以一較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精 神和範圍内,當可作些許之更動與潤飾,因此本發之保 護範圍當視後附之申請專利範圍所界定者為準。200304167 V. Various precisions of invention description (39). Moreover, it is preferable to manufacture the exposure device in a clean room in which temperature and cleanliness are controlled. The semiconductor device is shown in Fig. 12 as a part of the device function and performance design stage 2 0. According to this design stage, the manufacture of the photomask (grating) stage 2 0 2 is used to manufacture the substrate (crystal) of the element substrate. Circle, glass plate) stage 2 0, the pattern of the grating is exposed to the wafer processing stage 2 04 by the exposure device of the above embodiment, and the assembly stage of the element (including the dicing process, bonding) ) Manufacturing process; packaging (packaging manufacturing process) 205, inspection stage 206, etc. to manufacture. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection issued shall be determined by the scope of the attached patent application.

10803pif.ptd 第44頁 200304167 圖式簡單說明 第1圖係表示本發明之曝光裝置的一實施例之概略結 構圖。 第2圖係表示本發明之曝光裝置的一實施例之概略斜 視圖。 第3圖係表示具有補正機構的投影光學系統之結構 圖。 第4圖係表示投影領域之平面圖。 第5 A圖係表示位移調整機構之模式圖,第5 B圖係經位 移調整的圖案像之說明圖。 第6 A圖係經迴轉調整的圖案像之說明圖。 第6 B圖係經倍率調整圖案像之說明圖。 第7圖係表示光罩的圖案之平面圖。 第8圖係表示感光基板的圖案之平面圖。 第9圖表示本發明之曝光方法的第一實例之流程圖。 第1 0 A、1 0 B、1 0 C圖係說明一面調整補正速度及補正 量一面使圖案像曝光的情形之模式圖。 第1 1圖係表示本發明之曝光方法的第二實施例之流程 圖。 第1 2圖係表示半導元件之製造製程的一例之流程圖。 第13A、13B、13C圖係說明先前之曝光方法的課題之 模式圖。 圖式標號說明 2 3 位移調整機構(補正機構) 2 7 倍率調整機構(補正機構)10803pif.ptd Page 44 200304167 Brief Description of Drawings Fig. 1 is a schematic configuration diagram showing an embodiment of an exposure apparatus of the present invention. Fig. 2 is a schematic perspective view showing an embodiment of an exposure apparatus according to the present invention. Fig. 3 is a configuration diagram of a projection optical system having a correction mechanism. Fig. 4 is a plan view showing a projection area. Fig. 5A is a schematic diagram showing a displacement adjustment mechanism, and Fig. 5B is an explanatory diagram of a pattern image adjusted by displacement. FIG. 6A is an explanatory diagram of a pattern image adjusted by rotation. FIG. 6B is an explanatory diagram of the magnified pattern image. Fig. 7 is a plan view showing a pattern of a photomask. FIG. 8 is a plan view showing a pattern of a photosensitive substrate. Fig. 9 is a flowchart showing a first example of the exposure method of the present invention. Figures 10A, 10B, and 10C are schematic diagrams illustrating the case where the pattern image is exposed while adjusting the correction speed and amount. Fig. 11 is a flowchart showing a second embodiment of the exposure method of the present invention. FIG. 12 is a flowchart showing an example of a manufacturing process of a semiconductor device. Figures 13A, 13B, and 13C are schematic diagrams illustrating the subject of the conventional exposure method. Explanation of drawing symbols 2 3 Displacement adjustment mechanism (correction mechanism) 2 7 Magnification adjustment mechanism (correction mechanism)

10803pif. ptd 第45頁 200304167 圖式簡單說明 2 8、3 1 迴轉調整機構(直角稜鏡、補正機構) 4 9 a、4 9 b 定位系統(位置檢測部) 50A、50B 驅動裝置 51A、51B 驅動裝置 5 2 驅動裝置 C0NT 控制裝置 EX 曝光裝置 Μ 光罩 Ρ 感光基板(基板) PL1〜PL5 投影光學系統10803pif. Ptd Page 45 200304167 Brief description of drawings 2 8, 3 1 Rotary adjustment mechanism (right-angle 稜鏡, compensation mechanism) 4 9 a, 4 9 b Positioning system (position detection section) 50A, 50B Drive device 51A, 51B drive Device 5 2 Drive device CNT Control device EX Exposure device M Photomask P Photosensitive substrate (substrate) PL1 ~ PL5 Projection optical system

10803pif. ptd 第46頁10803pif.ptd Page 46

Claims (1)

200304167 六、申請專利範圍 1. 一種曝光方法係在一面使一光罩與一基板以同步移 動一面經介一投影光學系統使該光罩之一圖案曝光於該 基板之曝光方法,其特徵在於: 由設置在該投影光學系統之一補正機構加以補正投影 於該基板之該圖案的一像位置同時,按照該同步移動速 度加以設定補正該像位置之一補正速度或一補正量。 2 ·如申請專利範圍第1項所述之曝光方法,其特徵在 於,使該光罩與該基板加以一位置對準,按照該位置對 準結果加以設定該補正速度或該補正量。 3 ·如申請專利範圍第1項或第2項所述之曝光方法,其 特徵在於,按照曝光於該基板上之一曝光量的一目標曝 光量預先設定該同步移動速度同時,加以控制該補正速 度或該補正量。 4.如申請專利範圍第1項或第2項所述之曝光方法,其 特徵在於,加以檢測該光罩或該基板之一移動速度,依 據檢出之該移動速度加以設定該補正速度或該補正量。 5 .如申請專利範圍第3項所述之曝光方法,其特徵在 於,加以檢測該光罩或該基板之一移動速度,依據檢出 之該移動速度加以設定該補正速度或該補正量。 6. 如申請專利範圍第1項或第2項之曝光方法,其特徵 在於,使該補正速度或該補正量,配合該同步移動加以 設定成為一逐次連續值。 7. 如申請專利範圍第3項所述之曝光方法,其特徵在 於,使該補正速度或該補正量,配合該同步移動加以設200304167 VI. Application Patent Scope 1. An exposure method is an exposure method in which a mask and a substrate are moved synchronously on one side, and a pattern of the mask is exposed on the substrate through a projection optical system, which is characterized by: A correction mechanism provided on the projection optical system is used to correct an image position of the pattern projected on the substrate, and at the same time, a correction speed or a correction amount is set to correct the image position according to the synchronous moving speed. 2 · The exposure method described in item 1 of the scope of patent application, characterized in that the mask is aligned with the substrate in a position, and the correction speed or the correction amount is set according to the position alignment result. 3. The exposure method as described in item 1 or 2 of the scope of patent application, characterized in that the synchronous moving speed is set in advance according to a target exposure amount of an exposure amount exposed on the substrate, and the correction is controlled at the same time Speed or the amount of correction. 4. The exposure method according to item 1 or item 2 of the scope of patent application, characterized in that the movement speed of one of the photomask or the substrate is detected, and the correction speed or the movement speed is set according to the detected movement speed. The amount of correction. 5. The exposure method as described in item 3 of the scope of patent application, characterized in that the movement speed of one of the photomask or the substrate is detected, and the correction speed or the correction amount is set according to the detected movement speed. 6. For the exposure method of the first or second scope of the patent application, it is characterized in that the correction speed or the correction amount is set to a continuous value in conjunction with the synchronous movement. 7. The exposure method described in item 3 of the scope of patent application, characterized in that the correction speed or the correction amount is set in conjunction with the synchronous movement 10803pif.ptd 第47頁 200304167 六、申請專利範圍 定成為一逐次連續值。 8 ·如申請專利範圍第4項所述之曝光方法,其特徵在 於,使該補正速度或該補正量,配合該同步移動加以設 定成為一逐次連續值。 9. 一種曝光裝置,係在一面使一光罩與一基板以同步 移動一面經介一投影光學系統使該光罩之一圖案投影於 該基板之曝光裝置,其特徵在於,包括: 一補正機構,係設置於該投影光學系統,使投影於該 基板之該圖案的一像特性加以補正; 一驅動裝置,係驅動該補正機構;以及 一控制裝置,係按照該同步移動速度,在該驅動裝置 加以設定該驅動速度或該驅動量,或者該驅動速度及該 驅動量。 1 0 .如申請專利範圍第9項所述之曝光裝置,其特徵在 於,包括: 一位置檢測部,係為使該光罩與該基本進行位置對 準;以及 該控制裝置,係依據該位置檢測部之一檢出結果,加 以設定該驅動速度或該驅動量,或者該驅動速度及該驅 動量。 11. 一種曝光裝置,係在一面使一光罩與一基板以同 步移動一面經介一投影光學系統使該光罩之一圖案投影 於該基板之曝光裝置,其特徵在於,包括: 一補正機構,係設置於該投影光學系統,使投影於該10803pif.ptd Page 47 200304167 VI. The scope of patent application shall be a continuous value. 8 · The exposure method as described in item 4 of the scope of patent application, characterized in that the correction speed or the correction amount is set to a continuous value in conjunction with the synchronous movement. 9. An exposure device, which is an exposure device that makes a photomask and a substrate move synchronously, and projects a pattern of the photomask on the substrate via a projection optical system, characterized in that it includes: a correction mechanism Is provided in the projection optical system to correct an image characteristic of the pattern projected on the substrate; a driving device is used to drive the correction mechanism; and a control device is used in the driving device according to the synchronous moving speed The driving speed or the driving amount, or the driving speed and the driving amount are set. 10. The exposure device according to item 9 of the scope of patent application, comprising: a position detection unit for aligning the photomask with the base; and a control device based on the position One of the detection sections detects the result, and sets the driving speed or the driving amount, or the driving speed and the driving amount. 11. An exposure device, which is an exposure device that makes a photomask and a substrate move in synchronization while passing a pattern of the photomask onto the substrate via a projection optical system, characterized in that it includes: a correction mechanism , Set on the projection optical system, so that the projection on the 10803pif. ptd 第48頁 20030416710803pif.ptd p. 48 200304167 10803pif.ptd 第49頁10803pif.ptd Page 49
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US20050088664A1 (en) * 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
US7190434B2 (en) * 2004-02-18 2007-03-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100763431B1 (en) * 2004-03-29 2007-10-04 후지필름 가부시키가이샤 Exposure apparatus and exposure method
JP4807100B2 (en) * 2006-02-23 2011-11-02 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
DE102006039760A1 (en) * 2006-08-24 2008-03-13 Carl Zeiss Smt Ag Illumination system with a detector for recording a light intensity
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CN101373335B (en) * 2007-08-20 2010-10-13 中芯国际集成电路制造(上海)有限公司 Method for optimizing scan exposure
KR102247563B1 (en) 2014-06-12 2021-05-03 삼성전자 주식회사 Exposure method using E-beam, and method for fabricating mask and semiconductor device using the exposure method
KR102404639B1 (en) 2015-02-02 2022-06-03 삼성전자주식회사 method for exposing a electron beam and substrate manufacturing method including the same
JP6761281B2 (en) * 2016-06-01 2020-09-23 キヤノン株式会社 Scanning exposure equipment and article manufacturing method

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