TW200303970A - Light source unit, lighting device, exposure device and exposure method - Google Patents
Light source unit, lighting device, exposure device and exposure method Download PDFInfo
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- TW200303970A TW200303970A TW092101775A TW92101775A TW200303970A TW 200303970 A TW200303970 A TW 200303970A TW 092101775 A TW092101775 A TW 092101775A TW 92101775 A TW92101775 A TW 92101775A TW 200303970 A TW200303970 A TW 200303970A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
Abstract
Description
200303970 五、發明說明（1) 發明所屬之技術領域 本發明為關於半導體元件，液晶顯〜 件，薄膜磁頭、及其他微元件的製造二V it件 ，攝像- 用兮使用ΐ % 噙照明梦的曝 複中 光裝置之光源元件及照明裝置，以及 曝光裝置與曝光方法。 & 先前技術 腦及電視機等的顯示元件，用途更多。 〜雜， 性的筆記薄型的文字處理器或筆記薄特別是一八電 使用液晶顯示面板為顯示元件。又，以，人電跑後鴣帶 近年來’液晶顯示面板使用於之a 雨 a ··，.一 .·一 ^ 4 個 ， 、/^ 、 的液晶顯示面板已實用化了 ，液晶顯禾年來 設置場所，一般家庭的電視機使用之^炎〜％要 液，顯示面板，乃在玻璃基板（1)1&1^)上胃的透^月來薄越膜多電^ 用微影14刻法（p h 〇 t 〇 1丨t h 〇 g r a p h y )形成所望的圖型、身 (pattern)而製造的。該微影蝕刻工程，可使用投影曝^ 裝置，將罩幕上形成的原晝圖型藉投影光學系投影曝" 至塗布光阻劑等感光劑的坡璃基板上。 惟，在投影曝光裝置，經^ $光學元件照射到基板 上的照明光的光量，已設計成均二分佈，但構成光源的 燈，經過長時間後會劣化；又因供給燈的電力量會變動 等，所以，經過投影光學元件昭’射ϋ到基板上的照明光之 光量會變動。如上述的照明光的光量變動，在逐步重複 (step and repeat)方式的投影曝光裝置，因利用控制快 門的開閉時間來控制曝光量，〃ϋ光^產生斑紋，致曝200303970 V. Description of the invention (1) The technical field of the invention The present invention relates to the manufacture of semiconductor devices, liquid crystal display devices, thin-film magnetic heads, and other micro-devices. It is used for imaging-using ΐ% 噙Light source element and illuminating device for exposing medium light device, as well as exposure device and exposure method. & Prior art Display elements such as brains and televisions have more uses. ~ Miscellaneous, notebook-type word processors or notebooks, especially Yaba Denki, use liquid crystal display panels as display elements. In addition, in recent years, people have been running the LCD panel used in recent years, a rain a ······· ^^ 4 LCD panels have been put into practical use. Set up a place in the past years, the general household TV use ^ inflammation ~% solution, display panel, is on the glass substrate (1) 1 & 1 ^) through the stomach ^ month thin film more electricity ^ with a shadow 14 The engraving method (ph 〇 t 〇 1 丨 th 〇graphy) is formed by forming a desired pattern and pattern. In this lithography etching process, a projection exposure device can be used to project the original daytime pattern formed on the mask by a projection optical system onto a sloped glass substrate coated with a photosensitive agent such as a photoresist. However, in the projection exposure device, the light amount of the illumination light irradiated onto the substrate through the optical element has been designed to be uniformly distributed, but the lamps constituting the light source will deteriorate after a long time; and due to the amount of power supplied to the lamp, Due to variations, the amount of illumination light that is projected onto the substrate through the projection optical element varies. As described above, in the light amount of the illumination light, in a step and repeat projection exposure device, since the exposure amount is controlled by controlling the opening and closing time of the shutter, the streak ^ produces streaks and causes exposure.
10802pif. ptd $ 5頁 200303970 五、發明說明（2) 光量控制的精度低下。又，逐步掃描（step and scan)方 式的投影曝光裝置，在掃描曝光中如照明光的變動，則 會發生曝光班。又，照明光的光過多時，掃描的速度趕 不上，變成曝光量超過；另一方面，照明光的光量過少 時，掃描速度非減緩不可，極端降低掃描能量。 因此有提案設一光源裝置，能由監測光源照射的照 明光，保持照射之照明光的光量為一定（請參考曰本專利 特開平8 - 3 2 7 8 2 6號）。該光源裝置，設有導光器（1 i gh t g u i d e )，將由光源照射的照明光用凹面鏡聚光，再由另 一端導入入射的被照體；以及光纖維，由導光器分岐， 供監視用。由該監視用的光纖維，將由光源照射的照明 光導入光感應器，檢出照明光的光量，以進行監視由光 源照射的照明光之光量。 但，在投影曝光裝置，因光源與照明光導入被照體 的光路中，配設有波長選擇濾光器或減光濾光器等的濾 光器，及將照明光在所定之時間遮斷的快門等，故上述 之裝置構造，即採用光源照射的照明光導入被照體的導 光器，再由導光器分岐出監視用光纖維的構造之場合， 由於濾光器的插入光路、快門的開閉等，使光感應器檢 出的照明光的光量發明變化，加上光源的時間變化（時間 劣/化），要確實把·握光量的變化有困難。又，由光源照射 之照明光導入被照體之導光器，再分岐到監視用光纖 維，也會招致照明光的光量之損失。 發明内容10802pif. Ptd $ 5 pages 200303970 V. Description of the invention (2) The accuracy of light quantity control is low. In addition, in a step and scan type projection exposure device, if the illumination light changes during the scanning exposure, an exposure shift occurs. When the amount of illumination light is too much, the scanning speed cannot keep up and the exposure amount exceeds. On the other hand, when the amount of illumination light is too small, the scanning speed must be slowed down and the scanning energy can be extremely reduced. Therefore, there is a proposal to set up a light source device, which can illuminate the illuminating light from the monitoring light source and keep the amount of illuminating illuminating light constant (please refer to Japanese Patent Laid-Open No. 8-3 2 7 8 2 6). The light source device is provided with a light guide (1 ightguide), which focuses the illumination light irradiated by the light source with a concave mirror, and then guides the incident object through the other end; and an optical fiber is divided by the light guide for monitoring use. The monitoring optical fiber introduces the illumination light irradiated from the light source into the light sensor, detects the light amount of the illumination light, and monitors the light amount of the illumination light irradiated from the light source. However, in the projection exposure device, since the light source and the illumination light are introduced into the light path of the subject, a filter such as a wavelength selection filter or a reduction filter is provided, and the illumination light is blocked at a predetermined time. In the case of the above-mentioned device structure, when the illumination light emitted by the light source is introduced into the light guide of the subject, and the structure of the optical fiber for monitoring is divided by the light guide, the optical path of the filter is inserted. When the shutter is opened or closed, the light quantity of the illuminating light detected by the light sensor is changed, and the time change (time degradation / deterioration) of the light source is added, so it is difficult to grasp and change the light quantity. In addition, the illumination light irradiated from the light source is introduced into the light guide of the subject, and then divided into the monitoring optical fiber, which also results in a loss of the amount of illumination light. Summary of the invention
10802pif.ptd 第6頁 200303970 五、發明說明（3) 本發明之目的，為提供一不招致光量損失，能確實 檢出光源的光量變化，且能保持光源照射的照明光之光 量為一定的曝光裝置之光源元件及照明裝置，使用該照 明裝置的曝光裝置及曝光方法。 本發明的光源元件，其特徵在具備：光源、及電力 供應手段，供給該光源電力；及反射鏡，將該光源照射 的照明光，反射到被照射體側；及吸光手段，用以吸收 該反射鏡的漏光；及檢出手段，檢出入射該吸光手段的 漏光之光量；以及電力量控制手段，依據該檢出手段檢 出的漏光之光量’控制該電力供應手段供給光源的電力 量。 依本發明的光源元件，利用反射鏡的漏光檢出光源 照射之照明光的光量，再依據檢出的照明光的光量，控 制光源照射的照明光之光量為一定量。因此，無照明光 的損失，且由光源檢出照射的照明光之光量，在光源產 生經時的變化（歷時的劣化）的場合，亦能夠保持光源照 射的照明光之光量為一定量。 又，本發明的光源元件，其特徵為增設導光手段， 將射入上述吸光手段的漏光，導入該檢出手段；該導光 手段備有將該漏光依波長分成複數的分岐之分岐手段； 上述檢出手段，亦包含複數的檢出手段，能各別檢出各 分岐手段分出的漏光量。 該光源元件，在光源發生經時之變化時，由波長變 化可知其劣化狀況，故用複數的波長監視光源，可正確10802pif.ptd Page 6 200303970 V. Description of the invention (3) The purpose of the present invention is to provide an exposure that does not cause a loss of light quantity, can detect the light quantity change of the light source, and can keep the light quantity of the illumination light from the light source to a certain exposure A light source element and a lighting device of the device, and an exposure device and an exposure method using the lighting device. The light source element of the present invention is characterized by comprising: a light source and a power supply means for supplying power to the light source; and a reflector that reflects the illumination light radiated from the light source to the side of the object to be irradiated; and a light absorption means for absorbing the light Light leakage from the reflector; and detection means to detect the amount of light leaked into the light absorption means; and power amount control means to control the amount of power supplied to the light source by the power supply means based on the amount of light leaked from the detection means. According to the light source element of the present invention, the amount of illumination light irradiated by the light source is detected by leaking light from the reflector, and the amount of illumination light irradiated by the light source is controlled to a certain amount based on the detected amount of illumination light. Therefore, there is no loss of illuminating light, and the amount of illuminating illuminating light detected by the light source can maintain a constant amount of illuminating illuminating light when the light source changes over time (deterioration over time). In addition, the light source element of the present invention is characterized in that a light guiding means is added to introduce the light leakage incident into the light absorption means into the detection means; the light guiding means is provided with a dividing means for dividing the light leakage into plural divisions according to wavelengths; The above detection methods also include a plurality of detection methods, which can individually detect the amount of light leakage from each of the branching methods. This light source element can be used to monitor the light source with multiple wavelengths to determine its deterioration status when the light source changes with time.
10802pif.ptd 第7頁 200303970 五、發明說明（4) 檢出光源的劣化狀況。又，能夠正確檢出光源的光之 中，所望波長的光之劣化狀況。又，上述之依據波長分 成複數之光分岐，不僅分成波長區域互異的複數之光分 岐；亦可在複數之光分岐中有互異的波長分佈（即複數的 光之間，波長區域至少有一部份重疊也可以）。 又，本發明的光源元件，其特徵為，該分岐手段具 備：在該輸出端成複數分岐的光纖維，以及在該些光纖 維的各輸出端設置的波長選擇部材。又，該光源元件的 分岐手段，在其輸出端配置複數分岐的光纖維之構造也 可以。 又，本發明的光源元件，其特徵為，該分岐手段具 備：分光鏡（beam splitter)，將前述之漏光依波長分 岐；以及波長選擇部材，配置於該分光鏡分岐的漏光的 光路中。又，光源元件之該分岐手段，配備分光鏡將前 述之漏光依波長分岐之構造亦可。亦即，在分光鏡分岐 後的波長分佈，如為所望之波長分佈的場合，並無必須 用波長選擇部材之必要。 又，本發明的光源元件，其特徵為，該吸光手段備 有散熱部材。依本發明的光源元件，吸收漏光之際產生 的熱，可由散熱部材放出。 又，本發明的光源元件，其特徵為，在前述反射鏡 反射的照明光的光路中，配置快門。 由該光源元件，因要利用配置於比快門更靠光源側 的反射鏡之漏光，檢出光源照射的照明光之光量，故能10802pif.ptd Page 7 200303970 V. Description of the invention (4) Detects the deterioration of the light source. In addition, among the light from the light source, it is possible to accurately detect the deterioration of the light of a desired wavelength. In addition, the above-mentioned light division into plurals according to the wavelength is not only divided into plural light divisions in which the wavelength regions are different; but also has different wavelength distributions in the plural light divisions (that is, there is at least one wavelength region between the plural lights. Partial overlap is also possible). The light source element of the present invention is characterized in that the branching means includes an optical fiber having a plurality of branches at the output end, and a wavelength selection member provided at each output end of the optical fibers. The branching means of the light source element may have a structure in which a plurality of branched optical fibers are arranged at the output end. The light source element of the present invention is characterized in that the branching means includes a beam splitter that divides the leaked light according to the wavelength; and a wavelength selection member that is arranged in the light leaking optical path that the beam splitter divides. In addition, the light source element may be provided with a beam splitter having a structure that divides the aforementioned leaked light according to the wavelength by providing a beam splitter. That is, in the case where the wavelength distribution after the beam splitter diverges is a desired wavelength distribution, it is not necessary to use a wavelength selection member. The light source element of the present invention is characterized in that the light absorbing means is provided with a heat radiation member. According to the light source element of the present invention, heat generated when light is leaked is absorbed by the heat radiation member. The light source element of the present invention is characterized in that a shutter is arranged in the optical path of the illumination light reflected by the reflector. With this light source element, it is possible to detect the light amount of the illuminating light irradiated by the light source by using the leaked light of a reflector disposed closer to the light source side than the shutter.
10802pif. ptd 第8頁 200303970 五、發明說明（5) 在不受快門開閉之影響狀態，檢出照明光的光量。 又，本發明的照明裝置，其特徵為，具備上述之光 源元件；以及照明光學系，將該光源元件射出的照明 光，導入前述之被照射體。 依本發明的照明裝置，因光源元件射出的照明光之 光量保持一定，故由照明光學系導入被照體的照明光之 光量，亦能保持一定量。 又，本發明的曝光裝置，其特徵為，具備上述之照 明裝置，以及投影光學系，將該照明裝置照明的罩幕上 的圖型像，投影到感光性基板上。 依本發明的曝光裝置，因照明裝置以一定之光量照 明罩幕，故在罩幕的圖型像投影至感光性基板時，能夠 防止產生曝光斑。 本發明的曝光方法，為使用上述之曝光裝置的曝光 方法，其特徵為包含：照明工程，即用該照用光學系照 明罩幕；以及投影工程，利用該投影光學系將上述罩幕 的圖型像，投影至感光性基板。 依該曝光方法，因照明工程以一定之光量照明罩 幕，在該罩幕的圖型像投影到感光性基板之時，能夠防 止曝光班發生。 又，本發明的光源元件，其特徵為具備：光源；及 電力供應手段，供給該光源電力；及檢出手段，檢出該 光源供給之光的光量；以及電力量控制手段，依據該檢 出手段檢出的光之光量，控制該電力供應手段供給該光10802pif. Ptd Page 8 200303970 V. Description of the invention (5) Detect the amount of illumination light without being affected by the shutter opening and closing. A lighting device according to the present invention includes the above-mentioned light source element, and an illumination optical system that guides the illumination light emitted from the light source element to the above-mentioned illuminated object. According to the illuminating device of the present invention, since the light amount of the illuminating light emitted from the light source element is kept constant, the light amount of the illuminating light introduced into the subject by the illumination optical system can also be kept a certain amount. The exposure apparatus of the present invention includes the above-mentioned illumination device and a projection optical system, and projects a pattern image on a screen illuminated by the illumination device onto a photosensitive substrate. According to the exposure device of the present invention, since the illuminating device illuminates the mask with a certain amount of light, it is possible to prevent the occurrence of exposure spots when the pattern image of the mask is projected onto the photosensitive substrate. The exposure method of the present invention is an exposure method using the above-mentioned exposure device, and is characterized by including: a lighting process, that is, using the photo-optical optical system to illuminate a mask; and a projection process, using the projection optical system, The image is projected onto a photosensitive substrate. According to this exposure method, the lighting process illuminates the mask with a certain amount of light. When the pattern image of the mask is projected onto the photosensitive substrate, exposure shifts can be prevented. The light source element of the present invention includes: a light source; and power supply means for supplying power to the light source; and detection means for detecting the light amount of light supplied by the light source; and power amount control means based on the detection The amount of light detected by the means to control the power supply means to supply the light
10802pif.ptd 第9頁 200303970 五、發明說明（6) 源的電力量，該檢出手段又包含第一光檢出部，用以檢 出光源供給的光之中的第一波長分布之光的光量；以及 第二光檢出部，用以檢測由光源供給的光之中，與該第 一波長分布之光相異的第二波長分佈之光的光量。 依本發明的光源元件，光源經時變化（經久的劣化） 發生時，因波長不同其劣化情況亦異，用複數的波長監 視光源，能更正確地檢出光源的劣化狀況。又，能正確 地檢出光源放出的光之中，所望波長之光的劣化狀況。 本發明的曝光裝置，為將罩幕形成的圖型複製到前 述感光性基板的曝光裝置，其特徵為具備：光源元件， 本發明的光源元件，即能用複數的波長監視光源的元 件；以及照明光學系，使該光源的光照明罩幕。 依本發明的曝光裝置，因照明裝置以一定的光量照 明罩幕，故在罩幕的圖型像投影到感光性基板之場合， 能夠防止產生曝光班。 又，本發明的曝光裝置，其特徵為具備：投影光學 系，將該罩幕的圖型投影到前述感光性基板上；及罩幕 台，用以載置該罩幕；以及基板台，用以載置該感光性 基板。將該罩幕及感光性基板對該投影光學系移動，同 時把在罩幕形成的圖型複製到感光性基板。 又，本發明的曝光裝置，其特徵為具備波長幅度切 換手段，對應該感光性基板的感光特性，切換照射上述 罩幕之光的波長幅度。 依本發明的曝光裝置，因在感光性基板上塗佈的光10802pif.ptd Page 9 200303970 V. Description of the invention (6) The amount of electric power of the source. The detection means further includes a first light detecting section for detecting the light of the first wavelength distribution among the light supplied by the light source. The amount of light; and a second light detection unit for detecting the amount of light of the second wavelength distribution, which is different from the light of the first wavelength distribution, of the light supplied from the light source. According to the light source element of the present invention, when the light source changes over time (long-term degradation), the deterioration of the light source varies depending on the wavelength. Monitoring the light source with a plurality of wavelengths can more accurately detect the deterioration of the light source. In addition, it is possible to accurately detect the deterioration of the light of a desired wavelength among the light emitted from the light source. The exposure apparatus of the present invention is an exposure apparatus that reproduces a pattern formed by a mask on the photosensitive substrate, and includes: a light source element; the light source element of the present invention, that is, an element capable of monitoring a light source with a plurality of wavelengths; and The illumination optical system illuminates the screen with the light from the light source. According to the exposure device of the present invention, since the illuminating device illuminates the mask with a certain amount of light, when the pattern image of the mask is projected onto the photosensitive substrate, it is possible to prevent the occurrence of exposure classes. In addition, the exposure apparatus of the present invention includes a projection optical system for projecting a pattern of the mask onto the photosensitive substrate; and a mask stage for placing the mask; and a substrate stage for This photosensitive substrate is placed. The mask and the photosensitive substrate are moved to the projection optical system, and at the same time, the pattern formed on the mask is copied to the photosensitive substrate. Further, the exposure apparatus of the present invention is characterized by including a wavelength range switching means for switching the wavelength range of the light irradiating the mask in accordance with the photosensitive characteristics of the photosensitive substrate. According to the exposure apparatus of the present invention, the light applied on the photosensitive substrate
10802pif. ptd 第10頁 200303970 五、發明說明（7) 阻劑，有感度低的光阻劑或高的光阻劑，如此，對應感 光性基板的感度等之感光特性，需要變更曝光功率之場 合，只需單方面的切換照射罩幕之光的波長幅度，就可 變更曝光功率。此時，因光源射出光的光量，可用複數 之波長監視，故在切換波長幅度之際，亦可檢出光量。 特別是在掃描型的曝光裝置，可以利用感光性基板 的掃描速度之變更，來變更感光性基板的曝光量，但使 用高感度光阻劑的場合，因基板台的最大掃描速度，可 使用之感度受限制；使用低感度光阻劑的場合，由提高 作業量之觀點亦有限制。因此，只用單一的波長幅度之 切換就能變更曝光功率，即可不受基板台的最大掃描速 度或作業量低下的約束，能夠對應各種感光特性的感光 性材料。 又，本發明的曝光裝置，其特徵為設置波長切換手 段，對應在感光性基板上複製之圖型的解析度，切換照 射前述罩幕之光的波長幅度。 依本發明的曝光裝置，在投影光學.系的色差修正之 觀點，因使用之光的波長幅度狹小的，能達成較高的解 析度，例如有必要大的曝光功率時，需犧牲一些解析 度，用較寬的波長幅度進行曝光；要求高解析度之場 合，就要犧牲一些曝光功率，作業量，用狹小的波長幅 度進行曝光，即單以波長幅度之切換，就能夠對應要求 之各種解析度。而且，因光源射出的光量，可用複數之 波長監視，故在切換波長幅度之際，亦可檢出光量。10802pif. Ptd Page 10 200303970 V. Explanation of the invention (7) Resistors, which have low sensitivity photoresist or high photoresist. In this case, the exposure power needs to be changed according to the sensitivity characteristics of the photosensitive substrate, such as sensitivity. The exposure power can be changed by simply switching the wavelength range of the light irradiating the mask. At this time, since the amount of light emitted by the light source can be monitored with a plurality of wavelengths, the amount of light can also be detected when the wavelength range is switched. Especially in the scanning type exposure device, the exposure speed of the photosensitive substrate can be changed by changing the scanning speed of the photosensitive substrate. However, when using a high-sensitivity photoresist, it can be used because of the maximum scanning speed of the substrate table. Sensitivity is limited; when using a low-sensitivity photoresist, there is also a limitation from the viewpoint of increasing the workload. Therefore, it is possible to change the exposure power with only a single switching of the wavelength range, and it is not restricted by the maximum scanning speed of the substrate stage or the reduced workload, and it can support various photosensitive materials. The exposure device of the present invention is characterized in that a wavelength switching means is provided to switch the wavelength range of the light irradiating the mask according to the resolution of the pattern reproduced on the photosensitive substrate. According to the exposure device of the present invention, from the viewpoint of chromatic aberration correction of projection optics, because the wavelength range of the light used is narrow, high resolution can be achieved. For example, when a large exposure power is necessary, some resolutions need to be sacrificed. Exposure with a wide wavelength range; when high resolution is required, it is necessary to sacrifice some exposure power, workload, and exposure with a narrow wavelength range, that is, only the switching of the wavelength range can correspond to the various resolutions required degree. In addition, since the amount of light emitted by the light source can be monitored by a plurality of wavelengths, the amount of light can also be detected when the wavelength range is switched.
10802pif.ptd 第11頁 20030397010802pif.ptd Page 11 200303970
述和其他目的 一較佳實施例 為讓本發明之上 明顯易懂，下文特舉 詳細說明如下： 實施方式 、特徵、和優點能更 ，並配合所附圖式， @ 一 i π aa = ΐ，面况明本發明實施例的曝光裝置。第1 ΐt f ϊ ί例的曝光裝置的全體構成之斜視圖。 本貫施例為，罩幕Μ與感光基板ρ相對地對由複數的反射 屈折型投影光學元件形成的投影光學系移動，同時將罩 幕Μ形成的液晶顯示元件的圖型d ρ (圖型）像，複製到感光 性基板的基板Ρ上，為適用逐步掃描（step and scan )方 式的曝光裝置之例。又，本實施例，設定基板P上塗布光 阻劑（感度2 〇 m j / c )或樹脂阻劑（感度：6 0 m j / c m2)。 以下之說明裡，在第1圖中設定X、Y、Z直交座標 系，現在參考X、Y、Z座標系說明各部件的位置關係。 X、Y、Z直交座標系，設定X軸及γ軸與基板P平行，Z軸與 基板Ρ成直交之方向。圖中的Χ、Υ、Ζ座標系，實際上ΧΥ 面設定成與水平面平行的面’ζ軸設定成垂直上之方向。 又，本實施例中’以罩幕Μ與基板Ρ的移動方向（掃描方 向）為X軸方向。 ， 本實施例的曝光裝置’設有照明光學系I L ’乃為均 句照明罩幕台MS上’由罩幕座（mask ho1 ter ’未圖示）支 持與XY面平行的罩幕Μ °第2圖為照明光學系1 L的側面 圖Ϊ與第1圖所示部件相同部分以同一符號表示。參照第 /及第2圖’照明光學系I L ’設有如超南壓水銀燈形成的Description and other objects A preferred embodiment is to make the present invention obvious and easy to understand. The following detailed descriptions are as follows: The embodiments, features, and advantages can be more detailed, and in accordance with the drawings, @ 一 i π aa = ΐ The surface condition shows the exposure device of the embodiment of the present invention. A perspective view of the entire configuration of the first exposure device of the first exposure method. In the present embodiment, the mask M is moved relative to the photosensitive substrate ρ to a projection optical system formed by a plurality of reflective inflection-type projection optical elements, and at the same time, the pattern d ρ of the liquid crystal display element formed by the mask M (pattern The image is copied onto the substrate P of the photosensitive substrate, and is an example of an exposure apparatus to which a step and scan method is applied. In this embodiment, it is assumed that a photoresist (sensitivity 200 m j / c) or a resin resist (sensitivity: 60 m j / c m2) is coated on the substrate P. In the following description, the orthogonal coordinate system of X, Y, and Z is set in the first figure, and the positional relationship of each component will now be described with reference to the X, Y, and Z coordinate systems. The X, Y, and Z orthogonal coordinate systems are set such that the X axis and the γ axis are parallel to the substrate P, and the Z axis and the substrate P are orthogonal to each other. The coordinate system of X, Y, and Z in the figure is actually set as the X ′ plane parallel to the horizontal plane, and the ζ axis is set to a vertical direction. In this embodiment, 'the moving direction (scanning direction) of the mask M and the substrate P is the X-axis direction. The exposure device of this embodiment is provided with an illumination optical system IL, and is provided on a uniform mask lighting stage MS. The mask curtain (mask ho1 ter) (not shown) supports a mask parallel to the XY plane. Fig. 2 is a side view of the illumination optical system 1L. The same parts as those shown in Fig. 1 are denoted by the same symbols. Referring to Fig. 2 and Fig. 2 "Illuminating optical system I L '"
10802pif· Ptd 第12頁 200303970 五、發明說明（9) 光源1 。因光源1配置在橢圓鏡2的第一焦點位置，故由光 源1射出的照明光束，經反射鏡3在橢圓鏡2的第二焦點， 形成包含g線（436nm)光，h線（405nm)光，及i線（365nm) 光之波長區域的光之光源像。亦即，曝光時不必要的包 括g線，h線及i線的波長區域以外的成分，在橢圓鏡2及 反射鏡3反射之際除去。 在該第二焦點位置設置快門4。快門4，由與光軸ΑΧ 1 成傾斜配置的開口板4 a (參照第2圖），及在開口板4 a形成 之開口遮蔽或打開用的遮蔽板4 b構成。快門4配置於橢圓 鏡2的第二焦點位置之理由為，因光源1射出的照明光束 在此被聚集，遮蔽板4 b只要少量移動，就可遮蔽在開口 板4a形成的開口 ，而且，能夠急速的變化通過開口的照 明光束的光量，可獲得脈衝狀的照明光束。 在透過反射鏡3的漏光之進行方向，配設吸光部材 (吸光手段）的吸光板8 a。該吸光板8 a，吸收透過反射鏡3 的漏光，乃為防止該些漏光對曝光裝置產生熱的影響或 光學的影響（例如散光）而設。吸光板8 a可用如黑防蝕鋁 (Black alumite)製成。在吸光板8a設有當做放熱部件的 散熱器9a。散熱器9a設有由熱傳導率高的金屬（如鋁或 銅）形成的複數的散熱板，吸光板8吸收透過反射鏡3的漏 光時產生之熱，由散熱板放出。又，漏光之中，除g線 光，h線光及i線光的波長區域，亦包含紅外線光及其他 可視域之光。 第3(a)圖示為吸光板8a及散熱器9a之形狀的側面10802pif · Ptd Page 12 200303970 V. Description of the invention (9) Light source 1. Since the light source 1 is arranged at the first focal position of the elliptical mirror 2, the illumination beam emitted by the light source 1 is formed at the second focus of the elliptical mirror 2 via the reflection mirror 3 to form light including g-line (436 nm) and h-line (405 nm). Light source image of light and light in the wavelength region of i-line (365nm) light. That is, components other than those in the wavelength region of the g-line, h-line, and i-line that are unnecessary during exposure are removed when the elliptical mirror 2 and the reflecting mirror 3 reflect. A shutter 4 is provided at this second focus position. The shutter 4 is composed of an opening plate 4 a (refer to FIG. 2) arranged obliquely to the optical axis AX 1 and a shielding plate 4 b for shielding or opening the opening formed in the opening plate 4 a. The reason why the shutter 4 is arranged at the second focus position of the elliptical mirror 2 is that the illumination beam emitted from the light source 1 is collected here, and the shielding plate 4 b can cover the opening formed in the opening plate 4 a with a small amount of movement. The light quantity of the illumination light beam passing through the opening is rapidly changed to obtain a pulsed illumination light beam. A light absorbing plate 8a of a light absorbing member (light absorbing means) is arranged in the direction of the light leakage passing through the reflecting mirror 3. The light absorbing plate 8a absorbs light leakage transmitted through the reflecting mirror 3, and is provided to prevent the light leakage from causing thermal or optical effects (such as astigmatism) on the exposure device. The light absorbing plate 8a can be made of, for example, black alumite. The light absorption plate 8a is provided with a heat sink 9a as a heat radiation member. The heat sink 9a is provided with a plurality of heat radiating plates formed of a metal (such as aluminum or copper) having a high thermal conductivity. The light absorbing plate 8 absorbs heat generated when the light leaks through the mirror 3 and is emitted from the heat radiating plate. In addition, in the leaked light, in addition to the wavelength regions of the g-line light, the h-line light, and the i-line light, infrared light and other light in the visible range are also included. Figure 3 (a) shows the side of the shape of the light absorbing plate 8a and the heat sink 9a.
10802pif.ptd 第13頁 200303970 五、發明說明（ίο) 圖，第3(b)圖示為第3(a)圖的平面圖。如圖所示，在吸 光板8 a的漏光入射位置，設有將漏光導至光感應器（檢出 手段）30a、30b的光纖維（導光手段）32的一端。即，在吸 光板8a，設有貫通光纖維32的貫通口 ，在該貫通口配置 光纖維3 2的一端。 光纖維32的他端，分岐成二個輸出端。該一方的輸 出端射出的漏光，經濾光器（波長選擇部件）3 8 a射入光感 應器3 0 a ;另一方的輸出端射出的漏光，經濾光器（波長 選擇部件）38b，射入光感應器30b。此處之濾光器38a， 由包括三張濾光器即通過g線光，h線光及i線的濾光器， 仿濾、光器（dummy filter)，及減光濾光器構成，可通過 包含g線光、h線光及i線光之波長區域的光。又，濾光器 3 8 b，由三張濾光器即可讓g線光，h線光及i線光透過的 濾光器，可讓i線光透過的濾光器，及減光濾光器構成， 可讓只包含i線光波長區域之光透過。 如上述，用複數的波長進行漏光的監視。即用光感 應器3 0 a檢測g線光’ h線光及i線光’用光感應器3 0 b檢測 i線光。如此做的理由為，光源1的經久性的輸出降低， 一般情況，短波長的光較早發生降低（經久的劣化），以 及光阻劑的種類不同，使對各波長的感度相異。即光阻 劑對短波長的感度與對長波長的感度相比，較高的場 合’檢測出g線光，h線光i線光的輸出’依該檢出的輸出 控制光源的光量，仍無法獲得適正的曝光量。因此，再 檢出i線光的輸出，有依據該檢出的檢出量控制光源的光10802pif.ptd Page 13 200303970 V. Description of the Invention (ίο) Figure, Figure 3 (b) is a plan view of Figure 3 (a). As shown in the figure, one end of an optical fiber (light guide means) 32 that guides the light leakage to the light sensors (detection means) 30a, 30b is provided at the light incident position of the light absorption plate 8a. That is, the light absorption plate 8a is provided with a through hole through which the optical fiber 32 is passed, and one end of the optical fiber 32 is arranged in the through hole. The other end of the optical fiber 32 is divided into two output ends. The light leakage from one output end passes through the filter (wavelength selection means) 3 8 a and enters the light sensor 3 0 a; the light leakage from the other output end passes through the filter (wavelength selection means) 38b. It enters the light sensor 30b. The filter 38a here is composed of three filters, that is, filters that pass g-line light, h-line light, and i-line, a dummy filter, a dummy filter, and a light reduction filter. The light can pass through a wavelength region including g-ray light, h-ray light, and i-ray light. In addition, the filter 3 8 b is a filter that can transmit g-line light, h-line light and i-line light through three filters, a filter that allows i-line light to pass through, and a light reduction filter The optical device is configured to transmit light including only an i-ray wavelength region. As described above, light leakage is monitored using a plurality of wavelengths. That is, the light sensor 30a is used to detect the g-line light'h-line light and the i-line light'is used to detect the i-ray light. The reason for this is that the long-term output of the light source 1 is reduced. Generally, short-wavelength light is reduced earlier (long-term degradation), and the types of photoresist are different, which makes the sensitivity to each wavelength different. That is, the sensitivity of the photoresist to the short wavelength is higher than the sensitivity to the long wavelength. When “g-ray light is detected, and the output of h-ray light and i-ray light” is controlled according to the detected output, the light quantity of the light source is still Unable to get proper exposure. Therefore, the output of the i-ray light is detected again, and the light of the light source is controlled according to the detected amount of the detected light.
10802pif. ptd 第14頁 200303970 五、發明說明（11) ^ 量之必要。又，自短波長到長波長均 感度之場合，須檢出g線光、h線光及丨略f定的光阻劑 該檢出的輸出控制光源的光量，可得1線光的輸出，依據 由光感應器30a、30b檢出的光量^正的f光量。 制電力量的，控制電源裝置（電力控制叹出/孔说’輪入控 控制裝置3 4的控制信號，控制電源袭手^又）^ 由電源 量。即，依據光感應器3 0 a、3 0 b的；^出供給光源1的電力 制裝置3 4控制電源裝置3 6，使光源丨^訊號’由電源控 值。 1的光量成為所望之 在橢圓鏡2的第二焦點位置形成 束，由中繼透鏡5 (re lay lens)轉變成光源像的_發散光 後射入波長選擇濾光器6a。波長選擇漁約^平行的光束， 所望之波長區域的光束，為對光路（光光器’只透過 之構造。又，與波長選擇濾光器6a同 ^X1 )可自在進退 進退構造的波長選擇濾光器6b，與波县、g二了尤路自在 起設置，該些波長選擇器6a、6b之任—據光器6a — 又，第2圖中的主控制系2 0，控制驅動裝置丄8光路配置。 擇慮光器6a、6b之任一方配置於光路中。 使波長選 在本實施例，波長選擇濾光器6a只透過包人 長區域的光；波長選擇濾光器6b可透過包含g線線之波 光及i線光的波長區域之光。如此，如本實施^ “ &線， 路配置波長選擇遽、光器6 a、6 b之那一方，切換照了在光 幕之光的波長幅度。又，波長選擇濾光器6a、、6=射f罩 當於本發明之所謂的波長幅度切換手段。 ’ P相10802pif. Ptd Page 14 200303970 V. Description of the invention (11) ^ The need for quantity. In addition, when the sensitivity is from the short wavelength to the long wavelength, it is necessary to detect the g-line light, h-line light, and a slightly fixed photoresist. The detected output controls the light amount of the light source, and the output of 1-line light can be obtained. The amount of light detected by the photo sensors 30a, 30b is equal to the positive f-light amount. To control the amount of power, the power supply device is controlled (the power control sighs / holes are said to be controlled by the control signal of the control device 34, and the power supply is controlled by the power source). That is, according to the photosensors 30a and 30b, the power supply device 34 that supplies the light source 1 controls the power supply device 36, so that the light source signal ^^ is controlled by the power supply. The amount of light of 1 becomes desired. A beam is formed at the second focal position of the elliptical mirror 2. The relay lens 5 (relay lens) transforms the divergent light of the light source image into the wavelength selective filter 6a. The wavelength selection is about ^ parallel beams, and the beams in the desired wavelength range are for the optical path (the structure of the light-optic device is only transmitted. Also, the wavelength selection filter 6a is the same as ^ X1). The optical filter 6b is installed at the same time as Bolu and Gyoulu. Any one of these wavelength selectors 6a and 6b-according to the optical filter 6a-and the main control system 20 in Fig. 2 controls the driving device.丄 8 optical path configuration. Any one of the selective optical devices 6a and 6b is arranged in the optical path. Selecting the wavelength In this embodiment, the wavelength selection filter 6a only transmits light in the long-range region; the wavelength selection filter 6b can transmit light in the wavelength region including the g-line wave and the i-line light. In this way, as in this embodiment, the & line, the wavelength selection chirp, and the optical devices 6a, 6b are arranged to switch the wavelength amplitude of the light shining on the light curtain. In addition, the wavelength selection filters 6a ,, and 6 = Emission f mask is used as the so-called wavelength amplitude switching means of the present invention. 'P phase
200303970 五、發明說明（12) 在此，對透過波長選擇濾光器6 a、6 b的光之光譜加 以說明，第4圖為說明透過波長選擇濾光器6 a、6 b的光譜 之圖。如第4圖所示，由光源1射出的光，波長區域寬廣 約由3 0 0〜6 0 0 // m，其光譜包含複數的光峰（明線）由光源1 射出的光之中，進行曝光不須要的波長成分，如前所 述，在橢圓鏡2及反射鏡3反射之際除去。曝光不須要之 成分除去後的光，射入配置於光路的波長選擇濾光器6a 時，在第4圖所示的包含i線的波長幅度Δλΐ的光透過。 另一方面，如在光路配置波長選擇濾光器6 b時，則包含g 線、h線及i線之波長幅度△ λ 2的光會透過。 透過波長選擇濾光器6a的光之功率（power)，為波長 幅度Δλΐ内的光譜之積分；透過波長選擇濾光器6b的光 之功率，為波長幅度Δλ2内的光譜之積分。此處，如第 4圖所示，g線、h線及i線各個光譜大約成同樣的分布， 故透過波長選擇濾光器6a的光之功率，與透過波長選擇 濾光器6 b的光之功率的比例概略為1比3左右。 如前所述，本實施例假設在基板P上塗布感度 2 0 m j / c m2的光阻劑，或感度6 0 m j / c m2的樹脂阻劑，該些的 感度比為1比3。因此，在基板P塗布高感度的光阻劑時， 在光路上配置透過光的功率低之波長選擇濾光器6 a，以 降低曝光功率。又，塗布感度低的樹脂阻劑時，在光路 上配置透過光的功率高之波長選擇濾光器6b，以提高曝 光功率。上述之做法，可使戴置基板P的基板台PS的移動 速度一定（最高速度：如300mm/sec)進行曝光。如此，在200303970 V. Description of the invention (12) Here, the spectrum of light transmitted through the wavelength-selective filters 6 a and 6 b will be described. FIG. 4 is a diagram illustrating the spectrum of the transmitted wavelength-selective filters 6 a and 6 b. . As shown in Figure 4, the light emitted by light source 1 has a broad wavelength range of approximately 3 0 ~ 6 0 0 // m, and its spectrum includes complex light peaks (bright lines) among the light emitted by light source 1, The wavelength components unnecessary for the exposure are removed when the elliptical mirror 2 and the reflecting mirror 3 reflect, as described above. When the light unnecessary for the exposure is removed, when it enters the wavelength selection filter 6a disposed in the optical path, the light including the i-line wavelength width Δλΐ shown in FIG. 4 is transmitted. On the other hand, when the wavelength selection filter 6 b is arranged in the optical path, light including the wavelength width Δ λ 2 of the g line, the h line, and the i line is transmitted. The power of the light transmitted through the wavelength selection filter 6a is the integral of the spectrum within the wavelength range Δλΐ; the power of the light transmitted through the wavelength selection filter 6b is the integral of the spectrum within the wavelength range Δλ2. Here, as shown in FIG. 4, the respective spectra of the g-line, the h-line, and the i-line have approximately the same distribution, so the power of the light transmitted through the wavelength-selective filter 6 a and the light transmitted through the wavelength-selective filter 6 b The ratio of power is roughly 1 to 3. As described above, in this embodiment, it is assumed that a photoresist having a sensitivity of 20 m j / cm 2 or a resin resist having a sensitivity of 60 m j / cm 2 is coated on the substrate P. The sensitivity ratio of these is 1 to 3. Therefore, when a high-sensitivity photoresist is applied to the substrate P, a wavelength selective filter 6 a having a low power for transmitting light is arranged on the optical path to reduce the exposure power. When a resin resist having a low sensitivity is applied, a wavelength selective filter 6b having a high power for transmitting light is arranged on the optical path to increase the exposure power. The above-mentioned method makes it possible to perform exposure at a constant moving speed (maximum speed: 300 mm / sec) of the substrate table PS on which the substrate P is mounted. So, in
10802pif. ptd 第16頁 200303970 五、發明說明（13) 本f施例為對應在基板p塗布的阻劑之感度（感光特性 用交換在光路配置的波長選擇濾光器，切換透過光 長幅度’以變更在基板p照射之光的功率。又，光源1 1 出光的光量，用複數的波長監視，即能夠監視光路' 士 ，波，選擇渡光器6 a時光的光量（只包含i線波長區域配 ，的光量），及在光路上配置波長選擇濾光器61)時光-之、一 I (包括g線、h線及i線的波長區域之光的光量）。依、光 在切換照射基板p之光的波長幅度時，亦能進行光’ 測。 里知 、又’站在投影光學系的色差修正之觀點，使用 的波長幅度狹小之一方，可達成更高的解析度。因“ 在ί要大曝光功率時，在光路上配置波長選擇渡氺 為 夕少犧牲些解析度，用較寬廣的波長幅度進二 在要求高解析度之場合，在光路上配置波長選 士 = 6 a、，些許犧牲曝光功率，甚至作業能量，以擇濾 ^田又進行曝光。如上所述，只用單項的波長 ^波 ί二I以對應要求的各樣解析度。因此，本實施Ϊ =f j板Ρ複製之圖型的解析度，可依交換在光彳，對 膺要濾光器，以切換透過光的波長幅度，即能%置的 應要求之各樣解析度。 1 %夠訝 設有與渡光器6a w之間的光路， Ϊ用i;:调整用的光量調整部件。該減光渡光器7 Ϊ 像计測裝置24計測透過投影光學系PL照射在基、、10802pif. Ptd Page 16 200303970 V. Description of the invention (13) This f example is the sensitivity of the resist applied on the substrate p (the sensitivity characteristics are exchanged with the wavelength selection filter placed on the optical path to switch the length of the transmitted light ' In order to change the power of the light irradiated on the substrate p. In addition, the amount of light emitted by the light source 1 1 can be monitored with a plurality of wavelengths, that is, the light path can be monitored. Area distribution, the amount of light), and a wavelength-selective filter 61) on the optical path, time-of-one, I (light quantity of light in the wavelength region including the g-line, h-line, and i-line). According to the light, even when the wavelength range of the light irradiating the substrate p is switched, light can be measured. From the viewpoint of chromatic aberration correction of the projection optical system, it is known that higher wavelength resolution can be achieved by using a narrower wavelength range. Because "when high exposure power is required, configure wavelength selection on the optical path to sacrifice some resolution, and use a wider wavelength range. If you need high resolution, configure wavelength selection on the optical path = 6 a. Slightly sacrifice the exposure power and even the operating energy to select the filter field and then perform the exposure. As mentioned above, only a single wavelength ^ wave ί 2 I is used to correspond to the required resolutions. Therefore, this implementation The resolution of the pattern copied by fj board P can be exchanged in the optical fiber, and the filter is required to switch the wavelength range of the transmitted light, that is, the various resolutions that can be set as required. 1% is enough The optical path between the light-transmitting device 6a and the light-transmitting device 6a w is used; i :: a light amount adjusting member for adjustment. The light-reducing light-transmitting device 7 Ϊ the image measuring device 24 measures the light emitted through the projection optical system PL to the base,
l〇8〇2pif. ptd 第17頁 200303970 五、發明說明（14) 板P的光之光學特性（光量等）時，或在曝光塗布高感度的 光阻劑之基板P時，在光路内配置。又，減光濾光器7配 置到光路中的控制，由第2圖中的主控制系，控制驅動裝 置1 8執行。 在減光濾光器7反射的光進行方向，配置有做為吸光 部件的吸光板8b。該吸光板8b，因吸收減光濾光器7的反 射光，乃為防止該反射光對曝光裝置的熱之影響及光學 的影響（如散光）而設。吸光板8b與吸光板8a同樣地用黑 防餘IS (black alumite)製成。在吸光板8b裝有當做散熱 部件的散熱器9b。散熱器係用熱傳導率高的金屬（如鋁或 銅）製造的散熱板複數個形成。吸光板8 b吸收減光濾光器 7的反射光時，產生的熱經散熱板放出。 透過波長選擇濾光器6a、6b的光，通過中繼透鏡10 再度聚光。在該聚光位置的近傍配置導光器1 1的入射端 1 1 a。導光器1 1 ，相當於本發明所稱的分割光學系，為例 如用多數的纖維素線隨機結束，構成隨機光導纖維，具 備有與光源1的個數（第1圖為1個）同個數的入射端1 1 a， 以及與構成投影光學系PL的投影光學元件之數量（第1圖 有五個）同數的射出端1 1 b〜11 f (第2圖只示出射出端 lib)。如此，在導光器1 1的入射端1 1 a入射的光，在該内 部.傳播後，由五個射出端1 1 b〜1 1 f分割射出。 在導光器1 1的射出端1 1 b與罩幕Μ之間，順序配置平 行光管透鏡（collimator lens)12b，減光渡光器13b，可 變減光濾光器1 4 b、飛眼積分器1 5 b，開口光圈1 6 b、及聚〇80〇2pif. ptd Page 17 200303970 V. Description of the invention (14) When the optical characteristics (light quantity, etc.) of the light of the plate P, or when the substrate P with a high-sensitivity photoresist is applied by exposure, it is arranged in the optical path. . The control for arranging the light reduction filter 7 in the optical path is performed by the main control system in FIG. 2 and the control driving device 18. A light absorbing plate 8b is disposed as a light absorbing member in the direction in which the light reflected by the light reduction filter 7 proceeds. The light absorption plate 8b absorbs the reflected light of the light reduction filter 7, and is provided to prevent the influence of the reflected light on the heat of the exposure device and the optical influence (such as astigmatism). Similarly to the light absorbing plate 8a, the light absorbing plate 8b is made of black alumite. The light absorbing plate 8b is provided with a heat sink 9b as a heat radiating member. The heat sink is formed by a plurality of heat radiating plates made of a metal having a high thermal conductivity, such as aluminum or copper. When the light absorption plate 8b absorbs the light reflected from the light reduction filter 7, the heat generated is emitted through the heat radiation plate. The light transmitted through the wavelength selection filters 6 a and 6 b is condensed again by the relay lens 10. An incident end 1 1 a of the light guide 11 is arranged near the light-condensing position. The light guide 11 is equivalent to the split optical system referred to in the present invention. For example, the light guide 11 is randomly terminated with a large number of cellulose threads, and constitutes a random optical fiber. The number of incident ends 1 1 a, and the same number of exit ends 1 1 b to 11 f as the number of projection optical elements constituting the projection optical system PL (five in FIG. 1) (only the exit ends are shown in FIG. 2). lib). In this way, the light incident on the incident end 1 1 a of the light guide 11 is propagated in the interior, and then is divided and emitted by the five exit ends 1 1 b to 1 1 f. Between the exit end 1 1 b of the light guide 11 and the cover M, a collimator lens 12b, a dimming crossover 13b, a variable dimming filter 1 4 b, and Eye integrator 1 5 b, aperture 1 6 b, and condenser
10802pif. ptd 第18頁 200303970 五、發明說明（15) 光透鏡系17b。同樣地，在光導器11的各射出端iic〜ilf 與罩幕Μ之間，亦各順次設有平行光管透鏡1 2 c〜1 2 f，減 光濾光器1 3 c〜1 3 f，可變減光濾光器1 4 c〜1 4 f，飛眼積分 器15c〜15f ，開口光圈16c〜16f ，以及聚光透鏡系 1 7 c〜1 7 f。此處，為說明簡單化，導光器1 1的射出端 1 1 b〜1 1 f與罩幕之間，設置的光學部件之構造，用設置於 射出端1 1 b與罩幕之間的平行光管透鏡1 2 b，減光遽光器 1 3 b，可變減光濾光器1 4 b，飛眼積分器1 5 b，開口光圈 1 6 b及聚光透鏡系1 7 b為代表說明。 由導光器11的射出端lib射出的發散光束，在由平行 光管透鏡1 2 b變換成大約平行的光束後，在當做粗調整用 之光量調整部件的減光濾光器13b，及微量調整用之光量 調整部件的可變減光濾光器丨4，順序通過再射入飛眼積 分器15b(光學積分器opticai integrator)。減光濾光器 13b及可變減光濾光器i4b，乃為調整導光器11的射出端 Ub射出光的透過光量而設置。與減光濾光器13b及可變 減光渡光器1 4b，同樣的減光濾光器丨3c〜丨3f及可變減光 渡光器1 4 c〜1 4 f也射出端110〜1]^設置，因此，調整該些 透過光量’即能夠使照射在罩幕Μ的光之光量，以及照射 在基板Ρ的光之光量均一。又，可變減光濾光器14b之透 ^ Ϊ ^控：制，由第2圖中的主控制系20，通過驅動裝置 5又=可變減光部件1 4 b的X軸方向之位置來操作。 %飛眼積分器丨5 b，是由多數的正透鏡元件使其中心軸 、、/口光轴AX延伸，縱橫且稠密配列的構造。因此，射入10802pif. Ptd page 18 200303970 V. Description of the invention (15) Optical lens system 17b. Similarly, parallel light pipe lenses 1 2 c to 1 2 f and light reduction filters 1 3 c to 1 3 f are provided between each of the exit ends iic ~ ilf of the light guide 11 and the mask M. , Variable light reduction filters 1 4 c to 1 4 f, flying eye integrators 15 c to 15 f, aperture diaphragms 16 c to 16 f, and condenser lens systems 17 c to 17 f. Here, to simplify the description, the structure of the optical component provided between the exit end 1 1 b to 1 1 f of the light guide 11 and the cover is the structure between the exit end 1 1 b and the cover. The collimator lens 1 2 b, the light reduction calender 1 3 b, the variable light reduction filter 1 4 b, the flying eye integrator 1 5 b, the aperture stop 1 6 b and the condenser lens system 1 7 b are Representative description. The divergent light beam emitted from the output end lib of the light guide 11 is converted into a substantially parallel light beam by the collimator tube lens 1 2 b, and then used as a light reduction filter 13 b for a light amount adjustment member for coarse adjustment, and a small amount. The variable light reduction filter 4 of the light amount adjusting member for adjustment passes through the fly-eye integrator 15b (optical integrator) in order. The light reduction filter 13b and the variable light reduction filter i4b are provided to adjust the amount of transmitted light of the light emitted from the output end Ub of the light guide 11. The same light reduction filters as the light reduction filter 13b and the variable light reduction filter 1 4b 丨 3c ~ 丨 3f and the variable light reduction filter 1 4c ~ 1 4f also have emission ends 110 ~ 1] ^ setting, so adjusting the amount of transmitted light 'can make the light amount of light irradiated on the mask M and the light amount of light irradiated on the substrate P uniform. In addition, the transmission of the variable light reduction filter 14b is controlled by the main control system 20 in FIG. 2 through the drive device 5 and the position of the X-axis direction of the variable light reduction member 1 4 b. To operate. The% fly-eye integrator 5b has a structure in which a large number of positive lens elements extend the central axis and the optical axis AX, and are arranged vertically and densely. Therefore, the injection
第19頁 200303970 五、發明說明（16) ---— 積分器15b的光束，被多數的透鏡元件波面分割，在 該後側焦點面（即射出面的近傍）形成由與透鏡元件數同 的光源像合成的二次光源。亦即，在飛眼積分器15b 的後側焦點面，形成實質的面光源。 、在飛眼積分器1 5b的後側焦點面形成的多數之二次光 源的光束，由配設於飛眼積分器丨5b之後側焦點面近傍的 開口光圈1 6 b (第1圖未顯示）限制後，射入聚光透鏡系 1 7 b。又，開口光圈1 6 b，在與該對應的投影光學元件p L j 的瞳面光學性的大約共軛的位置配置，有可變的開口部 用以限定供給照明的二次光源之範圍。開口光圈丨6 b，以 變化該可變開口部的開口徑，設定決定照明條件的σ值 為所望之值。（構成投影光學系PL之各投影光學元件 PL1〜PL5的瞳面的開口徑與在該曈面上之二次光源像的口 徑之比）。 經過聚光透鏡系1 7 b的光束，重疊地照明有圖型D Ρ形 成的罩幕Μ。由導光器11的其他射出端11c〜Ilf射出的發 散光束亦同樣地，順序通過平行光管透鏡1 2 c〜1 2 f、減光 濾光器1 3 c〜1 3 f，可變減光器1 4 c〜1 4 f ，飛眼積分器 15c〜15f，開口光圈16c〜16f，及聚光透鏡系17c〜17f，分 別重疊照明罩幕Μ。即照明光學系IL，照明在罩幕Μ上向Y 軸方向排列的複數（第1圖中共五個）的梯形區域。 罩幕Μ上的各照明區域的光，再射入與各照明區域對 應沿Υ軸方向配列的複數（第1圖中共五個）的投影光學元 件PL1〜PL5構成的投影光學系PL。此處，各投影光學元件Page 19 200303970 V. Description of the invention (16) ----- The beam of the integrator 15b is divided by the wave surface of most lens elements, and the rear focal plane (that is, near the exit surface) is formed by the same number of lens elements. The light source is like a synthesized secondary light source. That is, a substantially planar light source is formed on the rear focal plane of the flying eye integrator 15b. The light beams of most secondary light sources formed on the rear focal plane of the flying eye integrator 15b are formed by the opening aperture 1 6b (not shown in Figure 1) near the lateral focal plane behind the flying eye integrator 5b. ) After confinement, the condenser lens system 17 b. In addition, the aperture stop 16 b is disposed at approximately the conjugate position of the pupil plane optical properties of the corresponding projection optical element p L j, and has a variable opening to limit the range of the secondary light source for supplying illumination. The aperture stop 6 b changes the aperture diameter of the variable aperture and sets the value of σ that determines the lighting conditions to a desired value. (The ratio of the opening diameter of the pupil plane of each of the projection optical elements PL1 to PL5 constituting the projection optical system PL to the aperture diameter of the secondary light source image on this plane). The light beam passing through the condenser lens system 17 b is superimposedly illuminated with a mask M formed by a pattern D P. The divergent light beams emitted from the other output ends 11c to 11f of the light guide 11 are similarly passed through the parallel light tube lens 1 2 c to 1 2 f, and the light reduction filter 1 3 c to 1 3 f. The light devices 1 4 c to 1 4 f, the flying eye integrator 15 c to 15 f, the opening diaphragm 16 c to 16 f, and the condenser lens systems 17 c to 17 f respectively overlap the lighting cover M. That is, the illumination optical system IL illuminates a trapezoidal area of a plurality (a total of five in the first figure) arranged on the mask M in the Y-axis direction. The light from each of the illumination areas on the mask M is incident on a projection optical system PL composed of a plurality of projection optical elements PL1 to PL5 (a total of five in the first figure) arranged along the Z axis direction corresponding to each illumination area. Here, each projection optical element
10802pif. ptd 第20頁 200303970 五、發明說明（17) PL1〜PL5的構造是互同的。 再回到第1圖，在前述的罩幕台MS，設置掃描驅動系 (未圖示），設有供罩幕台M S沿掃描方向之X轴方向移動的 長形程部（strok)。又，為使罩幕台MS在掃描之直交方向 的Y軸方向微量移動，且繞Z軸微量回轉，設有一對調整 驅動系（未圖示）。然後，罩幕台M S的位置座標，可用移 動鏡2 1的雷射干涉計（不圖示）計測且控制位置。 在基板台P S，亦設有與上述同樣的驅動系，即同樣 設置掃描驅動系（未圖示），設有供基板台P S沿掃描之X軸 方向移動的長行程部，以及一對調整驅動系供基板台P S 在Υ軸方向微量移動，且繞Ζ軸微量回轉。而且，基板台 PS的位置座標，依使用移動鏡22的雷射干涉計（未圖示） 計測並控制位置。尚且，為使罩幕Μ與基板Ρ沿ΧΥ平面相 對地疊合位置，在罩幕Μ的上方配置一對調整系2 3 a、 23b 〇 如上述，由罩幕台M S側的掃描驅動系，及基板台P S 侧的掃描驅動系的作用，對由複數的投影光學元件 PL1〜PL5構成的投影光學系PL，將罩幕Μ與基板P —體的沿 同一方向（X軸方向）移動，可把罩幕Μ上全部的圖型區 域複製到基板Ρ上的全部曝光區域。 依本發明實施例的曝光裝置，利用反射鏡3的漏光， 檢測由光源1照射的照明光之光量，再依據該檢出的照明 光之光量’控制光源1射出的照明光的光量成為一定。因 此，不會有照明光的損失，而且，由光源檢出照射之照10802pif. Ptd Page 20 200303970 V. Description of the invention (17) The structures of PL1 ~ PL5 are the same. Returning to FIG. 1 again, a scanning drive system (not shown) is provided on the aforementioned mask stage MS, and a long stroke portion is provided for the mask stage MS to move in the X-axis direction of the scanning direction. In addition, a pair of adjustment drive systems (not shown) are provided to move the mask stage MS in a small amount in the Y-axis direction orthogonal to the scanning direction, and to rotate a small amount around the Z-axis. Then, the position coordinates of the mask stage M S can be measured and controlled by a laser interferometer (not shown) of the moving mirror 21. The substrate stage PS is also provided with the same drive system as above, that is, a scanning drive system (not shown) is also provided, a long stroke portion for moving the substrate stage PS in the X-axis direction of scanning, and a pair of adjustment drives are provided. It is used for the substrate table PS to move in the Z axis direction and to rotate around the Z axis. The positional coordinates of the substrate stage PS are measured and controlled by a laser interferometer (not shown) using the moving mirror 22. In addition, in order to position the mask M and the substrate P opposite to each other along the XY plane, a pair of adjustment systems 2 3 a and 23b are arranged above the mask M, as described above, by the scanning drive system on the MS platform side, And the role of the scanning drive system on the PS side of the substrate table, for the projection optical system PL composed of a plurality of projection optical elements PL1 to PL5, the mask M and the substrate P can be moved in the same direction (X-axis direction) as Copy all the pattern areas on the mask M to all the exposed areas on the substrate P. According to the exposure apparatus according to the embodiment of the present invention, the light leakage of the reflecting mirror 3 is used to detect the light amount of the illumination light radiated from the light source 1, and then the light amount of the illumination light emitted from the light source 1 is controlled to be constant based on the detected amount of the illumination light. Therefore, there is no loss of illuminating light, and the irradiated light is detected by the light source.
10802pif. ptd 第21頁 200303970 五、發明說明（18) 明光的光量，在光源經久時的變化（經久時的劣化）發生 時，亦能夠保持由光源照射的照明光之光量為一定。 在上述的實施例中，光纖維3 2的輸出端分岐成二 支，在二支輸出端與光感應器3 0 a、3 0 b之間，配置濾光 器3 8 a、3 8 b，使光感應器3 0 a可檢出包含g線、h線及i線 之波長區域的光之光量；光感應器3 0 b則僅能檢出包含i 線的波長區域之光的光量。但，由光纖維3 2的輸出端， 把射出的漏光用分光鏡分岐成二支也可以。即，如第5圖 所示，使光纖維3 2的輸出端射出的漏光射入分光鏡4 0， 在分光鏡4 0反射的漏光之光路中配置濾光器38a，用光感 應器3 0 a檢出包含g線、h線及i線的波長區域之光的光 量。透過分光40的漏光的光路中配置濾光器38b，用光感 應器3 0 b檢出只包含i線之波長區域之光的光量亦可。 又，如第6圖所示，光纖維3 2的輸出端射出的漏光經 中繼透鏡4 2、波長選擇濾光器4 4，射入分光鏡4 0，在分 光鏡40反射的漏光之光路中，配置波長選擇濾光器46及 中繼透鏡4 8，對光感應器3 0 a射入包含g線、h線及i線的 波長區域之光，在光感應器3 0 a檢出包含g線、h線及i線 的波長區域之光的光量。又，在透過分光鏡4 0的漏光的 光路中，配置波長選擇濾光器50及中繼透鏡52，對光感 應器3 0 b射入僅含i線之波長域的光，在光感應器3 0 b檢出 僅包含i線波長區域之光的光量亦可。 在上述的實施例，將漏光依據波長分成二支，但依 據波長分成三支以上也可以。第7圖為把光纖維32的輸出10802pif. Ptd Page 21 200303970 V. Description of the invention (18) The light quantity of the bright light can keep the light quantity of the illumination light irradiated by the light source constant when the light source changes over time (deterioration over time). In the above embodiment, the output ends of the optical fiber 32 are branched into two branches, and between the two output ends and the light sensors 3 0 a and 3 0 b, filters 3 8 a and 3 8 b are disposed. The light sensor 3 0 a can detect the light quantity of light in the wavelength region including the g-line, the h-line, and the i-line; the light sensor 3 0 b can only detect the light quantity of the light in the wavelength region including the i-line. However, the light leakage from the output end of the optical fiber 32 may be divided into two by a beam splitter. That is, as shown in FIG. 5, the leaked light emitted from the output end of the optical fiber 32 is incident on the spectroscope 40, and the filter 38a is arranged in the light leakage path reflected by the spectroscope 40, and the photo sensor 30 is used. a detects the light quantity of light in a wavelength region including g-line, h-line, and i-line. An optical filter 38b is arranged in the optical path of the leaked light that has passed through the spectroscope 40, and the light amount of light in the wavelength region including only the i-line may be detected by the photo sensor 30b. In addition, as shown in FIG. 6, the leaked light emitted from the output end of the optical fiber 32 passes through the relay lens 4 2, the wavelength selection filter 4 4, and enters the beam splitter 40, and the light leaked light path reflected by the beam splitter 40. In the configuration, a wavelength selection filter 46 and a relay lens 48 are arranged, and the light sensor 3 0 a is irradiated with light in a wavelength region including the g-line, the h-line, and the i-line, and is detected by the light sensor 3 0 a. The amount of light in the wavelength regions of the g-line, h-line, and i-line. Further, in the optical path of the leaked light passing through the spectroscope 40, a wavelength selection filter 50 and a relay lens 52 are arranged, and the light sensor 3 0b is irradiated with light in a wavelength range including only the i-line, and the light sensor 3 0 b Detects the amount of light including only light in the i-wavelength region. In the above embodiment, the light leakage is divided into two branches according to the wavelength, but three or more branches may be used according to the wavelength. Figure 7 shows the output of the optical fiber 32
10802pif. ptd 第22頁 200303970 五、發明說明（19) 端分岐成三支，在第一輸出端與光感應器3〇a之間，配置 中繼透鏡54a、波長選擇濾光器56a及中繼透鏡58a，在光 感應器3 0 a射入包含g線、h線及i線的波長區域之光。在 第一輸出端與光感應器30b之間，配置中繼透鏡54b、波 長選擇濾光器56b及中繼透鏡58b，在光感應器3〇b射入僅 包含1線波長區域的光。在第三輸出端與光感應器3〇c之 間’配置中繼透鏡5 4 c波長選擇渡光器5 6 c及中繼透鏡 5 8 c ’在光感應為3 0 c射入僅包含h線波長區域的光。如上 所述’將漏光依據波長分成三支來檢測，能更正確地檢 出光源的劣化狀況。 一 又，如第8圖所示，使光纖維3 2的輸出端射出的漏 光’經中繼透鏡6 〇、波長選擇濾光器6 2，射入分光鏡器 64 ’在分光鏡64反射的漏光之光路中置波長選擇渡光器 66及中繼透鏡68，在光感應器3〇a射入僅包含i線波長區 ，的光，光感應器3 0 a檢出僅包含i線波長區域之光的^ 蓋。又’在透過分光鏡64的漏光的光路中配置分光鏡 70 ’在分光鏡70反射之光的光路中配設波長選擇渡光器 72及中繼透鏡74，在光感應器30b射入僅包含h線^長^ ，的光’光感應器30b檢出僅包含h線波長區域之光的& 量。又於透過分光鏡70的漏光之光路中，配置波長選擇 渡光器7 6及中繼透鏡7 8，在光感應器3 0 c射入僅包含g線 波長區域的光，光感應器3 0 c檢出僅包含g線波長區域之 光的光量亦可。又利用分光鏡（beam splitter)當做分色 鏡（dichr〇ic mirr〇r)，僅透過所望的波長，或為反射的10802pif. Ptd Page 22 200303970 V. Description of the invention (19) The end is divided into three branches. Between the first output end and the light sensor 30a, a relay lens 54a, a wavelength selection filter 56a and a relay are arranged. The lens 58a enters light in a wavelength region including the g-line, the h-line, and the i-line into the photo sensor 30a. Between the first output terminal and the photo sensor 30b, a relay lens 54b, a wavelength selection filter 56b, and a relay lens 58b are arranged, and the light sensor 30b enters light including only a one-line wavelength region. Between the third output terminal and the light sensor 3c ', a relay lens 5 4 c is provided, and the wavelength-selective light flux 5 6 c and the relay lens 5 8 c' are 3 h in the light sensor. Light in the wavelength region. As described above, 'the light leakage is divided into three branches according to the wavelength for detection, and the deterioration of the light source can be detected more accurately. Again, as shown in FIG. 8, the leaked light emitted from the output end of the optical fiber 32 is transmitted through the relay lens 60 and the wavelength selective filter 62 and is incident on the spectroscope 64 ′. In the optical path of the leaked light, a wavelength selective crossing device 66 and a relay lens 68 are set, and the light sensor 30a emits light including only the i-line wavelength region, and the light sensor 30a detects only the i-line wavelength region. ^ Cover of the light. Also, 'the beam splitter 70 is arranged in the light path of the light leaking through the beam splitter 64'. The wavelength selective beamer 72 and the relay lens 74 are arranged in the light path of the light reflected by the beam splitter 70. The light sensor 30b of the h line ^ length ^ detects the & amount of light including only the h line wavelength region. In the optical path of the light leaking through the beam splitter 70, a wavelength-selective beam-passing device 7 6 and a relay lens 78 are arranged, and the light sensor 3 0 c emits light containing only the wavelength region of the g-line, and the light sensor 3 0 c It is also possible to detect the light amount of light including only the g-line wavelength region. Beam splitter is also used as dichroic mirror, which only transmits the desired wavelength or is reflective
200303970 五、發明說明（20) 構造也可以，此場合可省略波長選擇濾光器6 6、7 2、 7 6 ° 射入各光感應器的光，可由配置之波長選擇濾光器 的組合適當地選擇。因此，可依曝光裝置使用的感光性 材料的種類等，用光感應器檢出適合的光之波長，再依 據選擇之波長的光之光量，控制保持光射出的光量為一 定。 而且，本發明不受上述實施例的限制，在本發明的 範圍内可自由變更。例如，上述實施例中，舉逐步掃描 (step and scan)方的曝光裝置為例說明，但也適合用逐 步重複（step and repeat)方式的曝光裝置。在逐步重複 方式的曝光裝置，可利用控制快門的開閉時間控制曝光 量9使光源的光量保持一定’就可容易控制曝光量。 又，上述實施例中，在照明光學系I L内設超高壓水 銀燈為光源1 ，在波長選擇濾光器6 a、6 b選擇必要的g線 (436nm)的光，h、線（405nm)及i、線（365nm)的光。但，不以 此法為限，使用KrF激元雷射（excimer leser)(248nm)、 ArF激元雷射（1 93nm)，F2雷射（1 57nm)為光源1 ，使用該些 雷射射出的雷射光之場合，也可適用於本發明。 其次，說明利用本實施例的曝光裝置，在微影蝕刻 工程用於製造微元件的方法。第9圖示為製造當做微元件 的半導體元件製法之流程圖。首先，在第9圖的步驟 S40 ，在一套的晶圓上蒸著金屬膜。在第二的步驟S42， 在該一套晶圓上的金屬膜上塗布光阻劑。其後在步驟200303970 V. Description of the invention (20) The structure is also acceptable. In this case, the wavelength selection filter 6 6, 7, 2, 7 6 ° can be omitted. The light incident on each light sensor can be appropriately selected by the combination of the wavelength selection filters. To choose. Therefore, depending on the type of photosensitive material used in the exposure device, a suitable wavelength of light can be detected by a photo sensor, and the amount of light emitted by the holding light can be controlled to be constant according to the amount of light of the selected wavelength. The present invention is not limited to the above-mentioned embodiments, and can be freely modified within the scope of the present invention. For example, in the above embodiments, the step and scan side exposure device is taken as an example, but it is also suitable to use a step and repeat exposure device. In the step-and-repeat exposure device, the exposure amount can be controlled by controlling the opening and closing time of the shutter to keep the light amount of the light source constant, and the exposure amount can be easily controlled. Moreover, in the above-mentioned embodiment, an ultrahigh-pressure mercury lamp is set as the light source 1 in the illumination optical system IL, and necessary wavelengths of g-line (436 nm), h, line (405 nm), and i. Line of light (365nm). However, not limited to this method, KrF excimer laser (248nm), ArF excimer laser (1 93nm), F2 laser (1 57nm) are used as the light source 1, and these lasers are used to emit In the case of laser light, the present invention is also applicable. Next, a method for manufacturing a micro-device in a lithography etching process using the exposure apparatus of this embodiment will be described. Fig. 9 is a flowchart of a method of manufacturing a semiconductor device as a micro device. First, in step S40 of FIG. 9, a metal film is evaporated on a set of wafers. In a second step S42, a photoresist is coated on the metal film on the set of wafers. Followed by steps
10802pif. ptd 第24頁 200303970 五、發明說明（21) s 4 4，利用第1圖所示的曝光裝置，將罩幕上的圖型像經 設投影光學系（投影光學元件），在該一套晶圓上的各投 射區域順次曝光複製。 其後，在步驟S4 6，該一套的晶圓上的光阻劑顯像之 後，在步驟S 4 8 ，利用該一套的晶圓上的光阻劑圖型為罩 幕進行蝕刻，罩幕上的圖型對應的電路圖型，在各晶圓 的各投射區域形成。其後，再形成更上一層的電路圖 型，製造半導體元件等的元件。依上述的半導體元件的 製造方法，能夠以良好的生產率，製造有極細微之電路 圖型的半導體元件。 又，第1圖所示的曝光裝置，在基板（玻璃基板）上形 成所定的圖型（電路圖型、電極圖型等），亦可獲得當做 微元件的液晶顯示元件。以下，參照第1 0圖的流程圖說 明這種方法的一例。第1 0圖為利用本實施例的曝光裝 置，在基板上形成所定的圖型，製造當做微元件的液晶 顯示元件的製法之流程圖。 在第1 0圖的圖型形成工程S 5 0，為利用本實施例的曝 光裝置，將罩幕的圖型曝光複製到感光基板（塗布光阻劑 的玻璃基板）施行所謂的微影蝕刻工程。由該微影蝕刻工 程，在感光基板上形成包含多數的電極等之所定的圖 型。其後，曝光的基板經顯像工程、蝕刻工程，網線剝 離工程等各工程，在基板形成所定圖型，再移到下一步 驟的濾光器形成工程S5 2。 其次，在濾色器形成工程S 5 2形成的濾色器，有10802pif. Ptd Page 24 200303970 V. Description of the invention (21) s 4 4 Using the exposure device shown in Fig. 1, the pattern image on the mask is provided with a projection optical system (projection optical element). Each projection area on the set of wafers is sequentially exposed and copied. After that, in step S46, the photoresist on the set of wafers is developed, and in step S48, the photoresist pattern on the set of wafers is used as a mask for etching. The circuit pattern corresponding to the pattern on the screen is formed in each projection area of each wafer. Thereafter, a circuit pattern of a higher level is formed to manufacture components such as a semiconductor device. According to the above-mentioned method of manufacturing a semiconductor device, a semiconductor device having an extremely fine circuit pattern can be manufactured with good productivity. In addition, the exposure device shown in Fig. 1 can form a predetermined pattern (circuit pattern, electrode pattern, etc.) on a substrate (glass substrate), and a liquid crystal display element can also be obtained as a micro-element. An example of this method will be described below with reference to the flowchart in FIG. 10. FIG. 10 is a flowchart of a method for manufacturing a liquid crystal display device as a micro device by forming a predetermined pattern on a substrate using the exposure device of this embodiment. In the pattern forming process S50 of FIG. 10, in order to use the exposure device of this embodiment to copy the pattern exposure of the mask to a photosensitive substrate (a glass substrate coated with a photoresist), a so-called lithography etching process is performed. . By this lithographic etching process, a predetermined pattern including a large number of electrodes and the like is formed on a photosensitive substrate. After that, the exposed substrate is subjected to various processes such as a development process, an etching process, and a network cable peeling process to form a predetermined pattern on the substrate, and then moves to the next step of filter formation process S52. Next, the color filter formed in the color filter formation process S 5 2 has
10802pif.ptd 第25頁 200303970 五、發明說明（22) R (紅）、G (綠）、B (藍）對應的三種顏色的點組合成矩陣狀 多數配列，或R、G、B色的三支條紋的濾光器的複數組合 在水平掃描線方向配列。在濾色器形成工程S 5 2之後，進 行元件組合工程。在元件組合工程，將在圖型形成工程 S 5 0所得的有所定圖型之基板，及濾色器形成工程S 5 2所 得的濾色器等，組合成液晶面板（液晶元件）。 在元件組合工程S 5 4，例如，在圖型形成工程S 5 0所 得的有所定圖型之基板，及濾色器形成工程S 5 2所得的濾 色器之間，注入液晶以製造液晶面板（液晶元件）。其 後，在組件組合工程S56，安裝組合之液晶面板之施行動 作的電氣電路，背面照明等各部品，完成液晶顯示元 件。依上述的液晶顯示元件的製造方法，能夠以良好的 生產率製造有極細微之電路圖型的液晶顯示元件。 發明之效果 本發明的光源元件，利用反射鏡的漏光檢出由光源 照射的照明光之光量，再依據該檢出的照明光之光量， 控制光源照射的照明光之光量成一定。因此，檢出光源 照射的照明光之光量，不會招致照明光的損失，在光源 產生經久的變化（經久的劣化）時，亦能夠保持由光源 .照射的照明光之光量為一定。 : 又，在光源發生經久變化之際，因波長其劣化狀況 不同，所以用複數的波長監視光源，能夠正確檢出光源 的劣4匕狀況。尚且，利用配置於比快門更近於光源側的 反射鏡之漏光，檢出光源射出的照明光之光量，故照明10802pif.ptd Page 25 200303970 V. Description of the invention (22) The dots of the three colors corresponding to R (red), G (green), and B (blue) are combined into a matrix-like majority arrangement, or three of R, G, and B colors The plural combinations of the streaked filters are aligned in the horizontal scanning line direction. After the color filter formation process S 52, a component combination process is performed. In the component assembly process, a substrate having a predetermined pattern obtained in the pattern formation process S 50 and a color filter obtained in the color filter formation process S 5 2 are combined into a liquid crystal panel (liquid crystal element). In the component assembly process S 5 4, for example, between a substrate having a predetermined pattern obtained in the pattern formation process S 50 and a color filter obtained in the color filter formation process S 5 2, liquid crystal is injected to manufacture a liquid crystal panel. (Liquid crystal element). After that, in the component assembly project S56, various components such as the electrical circuit and backlight of the assembled liquid crystal panel are installed to complete the liquid crystal display element. According to the above-mentioned method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be manufactured with good productivity. ADVANTAGE OF THE INVENTION The light source element of this invention detects the light quantity of the illuminating light irradiated by a light source by leaking light of a reflector, and controls the light quantity of the illuminating light irradiated by a light source to be constant based on the detected light quantity. Therefore, the amount of illumination light emitted by the light source is detected without causing loss of illumination light. When the light source undergoes long-term changes (deterioration), the amount of illumination light emitted by the light source can be kept constant. : In addition, when the light source undergoes a long-term change, the deterioration of the light source is different due to the wavelength, so monitoring the light source with a plurality of wavelengths can accurately detect the inferior condition of the light source. In addition, the light leakage of the light emitted from the light source is detected by the leaked light of the reflector disposed closer to the light source side than the shutter, so the illumination is performed.
10802pif.ptd 第26頁 200303970 五、發明說明（23) 光的光量之檢出 本發明的照 量保持一定，故 之光量’能夠保 本發明的曝 罩幕，故在罩幕 防止產生曝光斑 本發明的曝 明罩幕，故在罩 夠防止產生曝光 雖然本發明 用以限定本發明 之精神和範圍内 明之保護範圍當 ，能夠不受快門開閉的影響。 明裝置，因光源元件射出的照 由照明光學系引導至被照射體 持一定。 光裝置，因照明裝置以一定的 的圖型像投影到感光性基板上 〇 光方法，因在照明工程以一定 幕的圖型像投影到感光性基板 斑。 已以一較佳實施例揭露如上， ，任何熟習此技藝者，在不脫 ，當可作些許之更動與潤飾， 視後附之申請專利範圍所界定 明光之光 的照明光 光量照明 時’能夠 的光量照 上時，能 然其並非 離本發明 因此本發 者為準。10802pif.ptd Page 26 200303970 V. Description of the invention (23) Detection of the light quantity of the invention The light quantity of the present invention is kept constant, so the light quantity can protect the exposure mask of the present invention, so it prevents the occurrence of exposure spots on the mask. The present invention The exposure screen is exposed, so the exposure is sufficient to prevent exposure. Although the present invention is used to limit the protection scope of the present invention within the spirit and scope of the present invention, it can not be affected by the shutter opening and closing. In the lighting device, the light emitted from the light source element is guided to the illuminated object by the illumination optical system. The light device is used to project a fixed pattern image onto a photosensitive substrate in a lighting device. The light method is used to project a spot pattern image onto a photosensitive substrate in a lighting project. It has been disclosed in a preferred embodiment as above. Anyone skilled in this art can continue to make changes and retouching, depending on the amount of illumination of the light of the bright light defined by the scope of the attached patent application. When the amount of light shines on, it can be seen that it does not depart from the present invention and therefore the author shall prevail.
10802pif. ptd 第27頁 200303970 圖式簡單說明 第1圖示本發明實施例的曝光裝置之全體概略構成的 斜視圖。 第2圖示本發明實施例的照明光學系之側面圖。 第3 ( a )圖示本發明實施例的吸光板及散熱器的側面 圖。 第3 ( b )圖示本發明實施例的吸光板及散熱器的平面 圖。 第4圖為本發明實施例的透過波長選擇濾光器的光譜 之說明圖。 第5圖示本發明實施例的漏光之分岐手段的其他例。 第6圖示本發明實施例的漏光之分岐手段的其他例。 第7圖示本發明實施例的漏光之分岐手段的其他例。 第8圖示本發明實施例的漏光之分岐手段的其他例。 第9圖示本發明實施例的微元件之半導體元件製造方 法的流程圖。 第1 0圖示利用本發明實施例的曝光裝置，製造微元 件的液晶顯示元件的製造方法流程圖。 圖式標示說明 1光源 .2橢圓鏡 ,3反射鏡 - 4快門 5 、10 、42 、48 、52 、 54 中繼透鏡 58 、 60 、 68 、 74 、 78 中繼透鏡10802pif. Ptd Page 27 200303970 Brief Description of Drawings Fig. 1 is a perspective view showing the overall configuration of an exposure apparatus according to an embodiment of the present invention. The second diagram illustrates a side view of an illumination optical system according to an embodiment of the present invention. The third (a) shows a side view of the light absorbing plate and the heat sink according to the embodiment of the present invention. Number 3 (b) is a plan view showing a light absorbing plate and a heat sink according to the embodiment of the present invention. Fig. 4 is an explanatory diagram of a spectrum of a transmission wavelength selective filter according to an embodiment of the present invention. Fig. 5 illustrates another example of the light leakage differentiation means in the embodiment of the present invention. FIG. 6 illustrates another example of the light leakage differentiation means in the embodiment of the present invention. Fig. 7 shows another example of the light leakage differentiation means of the embodiment of the present invention. Fig. 8 illustrates another example of the light leakage differentiation means in the embodiment of the present invention. Fig. 9 is a flowchart showing a method of manufacturing a semiconductor device of a micro device according to an embodiment of the present invention. Fig. 10 is a flowchart of a manufacturing method of a liquid crystal display element using a exposure device according to an embodiment of the present invention to manufacture a micro element. Schematic description 1 light source .2 elliptical mirror, 3 reflector-4 shutter 5, 10, 42, 48, 52, 54 relay lens 58, 60, 68, 74, 78 relay lens
10802pif. ptd 第28頁 200303970 圖式簡單說明 6、 4 4、4 6、5 0、5 6、6 2波長選擇濾光器 6 6、7 2、7 6波長選擇濾光器 7、 1 3 b〜1 3 f減光濾光器 8a、8b吸光板 9 a、9 b散熱器 1 1導光器 1 2平行光管透鏡 1 4 b〜1 4 f可變減光濾光器 1 5飛眼積分器 1 6開口光圈 1 8、1 9驅動裝置 2 0主控制系 2 4立體像計測裝置 3 0 a、3 0 b光感應器（檢出手段） 3 2 光纖維 34 電源控制裝置 3 6 電源裝置 3 8 a，3 8 b 濾光器 4 0，6 4，7 0 分光器 DP 圖型 Μ罩幕 Ρ 基板 MS 罩幕台 PS 基板台10802pif. Ptd Page 28 200303970 Brief description of the diagram 6, 4 4, 4 6, 50, 5, 6, 6 2 Wavelength selection filter 6 6, 7 2, 7 6 Wavelength selection filter 7, 1 3 b ~ 1 3 f light reduction filter 8a, 8b light absorption plate 9 a, 9 b heat sink 1 1 light guide 1 2 collimator lens 1 4 b ~ 1 4 f variable light reduction filter 1 5 flying eye Integrator 1 6 Opening aperture 1 8, 19 Driving device 2 0 Main control system 2 4 Stereo image measuring device 3 0 a, 3 0 b Light sensor (detection means) 3 2 Optical fiber 34 Power control device 3 6 Power supply Device 3 8 a, 3 8 b Filter 4 0, 6 4, 7 0 Beamsplitter DP pattern M cover P substrate MS cover stage PS substrate stage
10802pif. ptd 第29頁 20030397010802pif.ptd p. 29 200303970
10802pif.ptd 第30頁10802pif.ptd Page 30
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| JP2002061589A JP2003257846A (en) | 2002-03-07 | 2002-03-07 | Light source unit, lighting system, and system and method for exposure |
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| JP5723652B2 (en) * | 2011-03-30 | 2015-05-27 | 株式会社オーク製作所 | Photometric apparatus and exposure apparatus |
| NL2009020A (en) * | 2011-07-22 | 2013-01-24 | Asml Netherlands Bv | Radiation source, method of controlling a radiation source, lithographic apparatus, and method for manufacturing a device. |
| KR101946830B1 (en) | 2017-10-19 | 2019-02-12 | 주식회사 한진엔지니어링 | Preparation method for board for building interior materials having a vermiculite mixed with a bottom ash produced from coal power plant |
| JPWO2019146448A1 (en) * | 2018-01-24 | 2021-01-07 | 株式会社ニコン | Exposure device and exposure method |
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