200303039 玖、發明明 【發明所屬之技術領域】 本發明，係關於評價方法及曝光裝置之製造方法，簡 言之，係關於不進行形成有圖案轉印像之被曝光物體的顯 影而評價曝光裝置特性之評價方法，以及根據該評價方法 之評價結果，於調整製程中調整曝光裝置特性的曝光裝置 之製造方法。 【先前技術】 一直以來，用以製造半導體元件（積體電路）等之微影製 程，係使用將光罩或標線片（以下，通稱爲標線片）上形成之 圖案透過投影光學系統，轉印至塗佈有光阻等之晶圓或玻 璃板等基板（以下，通稱爲晶圓）上之各種的投影曝光裝置。 光阻，一般係使用感光性之高分子材料，利用曝光部 與未曝光部之溶解速度差或溶解度差來進行顯影。此光阻 ，大分爲因曝光部之顯影而溶解之正型光阻、與因未曝光 部之顯影而溶解之負型光阻。例如，化學放大型光阻含有 酸產生劑以作爲感光劑，藉由曝光所產生之酸於後續之熱 處理中誘發觸媒反應，促進顯影液之不溶化（負型）或溶化( 正型）。 此外，隨著半導體元件年年高積體化，投影曝光裝置 亦被要求能以良好之精度轉印更爲微細之圖案。爲滿足此 要求，能正確的評價曝光裝置之特性，例如，正確評價投 影光學系統之光學特性、標線片及晶圓之定位精度、曝光 用能量束之照度分佈等，是非常重要的。 200303039 投影光學系統之光學特性，例如，正確測量圖案所成 像之像面形狀，其前提即在於能正確測量投影光學系統視 野內各測量點之最佳聚焦位置（最好的聚焦位置）。作爲此最 佳聚焦位置之測量方法，主要以下列2種較爲人知。 其一，係所謂之CD/聚焦方法的測量方法。此測量方 法，係將既定之標線片圖案（例如，線與間隙圖案；line & space pattern)，於投影光學系統光軸方向之複數個晶圓位置 轉印至測試用晶圓上。然後，以掃描型電子顯微鏡（SEM)等 來測量將該測試用晶圓加以顯影後所得之光阻像（被轉印之 圖案像）之線寬値，根據該線寬値與投影光學系統光軸方向 之晶圓位置（以下，亦稱「聚焦位置」）的相關關係，來判斷 最佳聚焦位置。 另一方法，係以所謂之SMP聚焦測量法而周知之測量 方法。此測量方法，係在複數個聚焦位置，將楔形標記之 光阻像形成於晶圓上，將聚焦位置之差別所產生之光阻像 線寬値之變化放大成長邊方向之變化並加以替換，使用用 來檢測晶圓上標記之對準系統等之標記檢測系統，來測量 光阻像長邊方向之長度。然後，將顯示聚焦位置與光阻像 之相關關係的近似曲線之極大値附近以既定切割等級加以 切割，將所得之聚焦位置範圍之中點判斷爲最佳聚焦位置 〇 此外，晶圓定位精度之測量，例如，係大槪以下述順 序進行。首先，將標線片圖案面上形成之測量用圖案，轉 印至被定位爲該測量用圖案之投影位置（曝光位置）之晶圓上 200303039 既定區域。其次，使晶圓載台於既定方向僅移動既定之移 動量，將晶圓上其他區域定位於前述測量用圖案之投影位 置。此時晶圓載台之移動，係由載台控制裝置一邊監測用 以測量晶圓載台移動量之測長裝置（例如，雷射干涉器等）的 測量値，一邊進行。此晶圓之定位結束後，將前述測量用 圖案轉印至晶圓上其他區域。接著，將該轉印後之晶圓加 以顯影，以適當之測量裝置（例如，SEM)來測量該顯影後晶 圓上之測量用圖案之光阻像間之距離。然後，根據該測量 値與前述移動量之差，求出晶圓之定位精度。 進一步的，照度分佈之測量，例如，係大槪以下述順 序進行。於晶圓載台上之既定測量點配置專用感測器，在 將標線片從標線片載台上取下的狀態、或將完全沒有圖案 之素面玻璃標線片裝載於標線片載台上的狀態下照射能量 束。然後，將通過照明光學系統而來之曝光用能量束透過 投影光學系統投射於晶圓載台上，以配設在該投射區域內 測量點之晶圓載台的針孔（pin hole)感測器，來測量該能量 。此測量，在將針孔感測器於投射區域內一邊移動成矩陣 狀一邊反覆進行。然後，根據各測量點以針孔感測器測量 之能量，來求出照度分佈。 又，曝光後之晶圓，雖會接著進行顯影處理，但在顯 影處理之前，會先進行所謂顯影前烘烤（PEB)之熱處理。進 一步的，在顯影處理而形成光阻像後，進行用以將光阻膜 中或表面殘留之顯影液或沖洗液加以蒸發去除、光阻之硬 化、強化與晶圓之密合性，被稱爲所謂處理後烘烤（post- 200303039 bake)之熱處理。晶圓受到此等熱處理所造成之損傷，其結 果，有會產生晶圓之膨脹、收縮及變形（以下，爲方便起見 ，稱「變形等」）等之情形。 上述最佳聚焦位置之測量方法，無論CD/聚焦法及 SMP聚焦測量法之任一者，皆係使用將晶圓加以顯影所得 之光阻像線寬等之測量結果。然而，如前所述，由於晶圓 會因伴隨顯影處理之熱處理而受到損傷，故光阻像亦有產 生變形之虞。因此，光阻像之線寬等測量結果中，將會包 含與曝光裝置特性無關係的因素，而使所得之最佳聚焦位 置有可能含有誤差。此外，在測量對形成光阻像之晶圓進 行飩刻處理所得之像之線寬等情形時，亦有可能包含同樣 的誤差。 於上述晶圓之定位精度之測量時，亦係使用對晶圓進 行顯影所得之複數光阻像間之距離的測量結果。然而，前 述測量結果中，由於包含隨著顯影處理之熱處理所造成之 誤差，因此，所得之定位精度有可能包含誤差。 再者，上述照度分佈之測量，由於係於能量束投射區 域（照明區域）內以矩陣狀移動針孔感測器，當針孔感測器到 達各測量點時，於此時照射能量束，於各測量點求出能量 ，因此，需要與測量點數相同次數之測量動作，而有測量 上耗費大量時間之問題。此外，於各測量點進行測量時， 光源之照射能量並不一定相同，因此，所得之照度方分佈 亦有包含光源能量誤差之虞。再者，由於會因測量點位置 之不同而產生對針孔感測器之光照射角度的差異，因此針 200303039 孔感測器之靈敏度隨測量點位置而不同，尤其是在投射區 域之周邊部產生測定値可靠度降低之虞。 又，在不久的將來，隨著半導體元件更進一步的高積 體化，毫無疑問的曝光裝置之精度要求亦將更爲嚴格。因 此，必須能以更良好之精度測量曝光裝置之特性，上述誤 差亦更爲無法忽視。 本發明有鑑於上述情事，其第1目的，在提供一能在 短時間內以良好之精度求出曝光裝置特性的評價方法。 又，本發明之第2目的，在提供一曝光精度優異之曝 光裝置的製造方法。 【發明內容】 本發明之第1評價方法，係評價曝光裝置之特性，該 曝光裝置係透過投影光學系統，將第1面上之圖案轉印至 第2面上所配置之物體上，其特徵在於，包含：對前述第1 面上配置之圖案照射能量束，將前述圖案透過前述投影光 系統轉印至前述第2面上配置之感光體上的製程，該感光 體對應所照射之能量束能量其與顏色相關聯之物理性質會 產變化；根據表示前述感光體物理性質之變化的資訊檢測 前述圖案像，根據該檢測結果，獲得前述圖案像之形成狀 態的製程；以及，根據前述像之形成狀態來評價前述曝光 裝置之特性的製程。 本說明書中，所謂「感光體」，並不限於其全體具有 感光性者，亦包含例如僅表面層具有感光性等、僅部分具 有感光性者 200303039 根據本發明，由於能根據表示感光體之與顏色相關聯 之物理性質變化的資訊，區別曝光部與未曝光部，因此， 能在將圖案轉印至感光體上後，不進行顯影處理等而立即 獲得圖案像之形成狀態。因此，不需進行顯影處理及附帶 之處理（以下，稱「顯影處理等」）所耗費之時間，且能防止 在感光體上形成之圖案之轉印像產生因顯影處理所造成之 變形等，與習知使用光阻像等之情形相較，其結果，能在 短時間內以良好之精度來評價曝光裝置之特性。 此時，前述曝光裝置之特性，可包含前述投影光學系 統之特性。 本發明之第1評價方法中，前述圖案像，可藉由根據 表示前述感光體物理性質變化的資訊來抽出曝光部與未曝 光部之交界而加以檢測。 本發明之第1評價方法中，前述物理性質之變化與前 述能量束能量之變化的關係爲非線性。 此時，前述感光體物理性質之變化，在曝光次數爲1 次時與複數次時皆相同。 本發明之第1評價方法中，前述物理性質之變化與前 述能量束能量變化的關係爲線性。 本發明之第1評價方法中，前述物理性質，包含著色 濃度、光之折射率、光之透射率及光之反射率之至少一種 〇 此時，前述物理性質包含著色濃度，顯示前述物理性 質變化之資訊，爲有無著色之資訊。 11 200303039 本發明之第1評價方法中，前述圖案像，係使用經由 前述感光體之透射光及反射光之至少一種來加以檢測。 本發明之第1評價方法，對前述感光體之表面形成有 感光層者，係視前述感光體之膜厚變更前述圖案像之檢測 條件。 本發明之第1評價方法中，顯示前述物理性質變化之 資訊，係對前述感光體之攝影資料進行影像處理而獲得。 此時，前述影像處理，係根據前述攝影資訊中資訊之 最大値與最小値及前述感光體之物理性質變化，與前述能 量束能量之變化的關係來決定臨界値，以該臨界値來將前 述攝像資料加以2値化。 本發明之第1評價方法中，前述圖案像，可使用經由 前述感光體之繞射光來加以檢測。 本發明之第2評價方法，係評價曝光裝置之特性，該 曝光裝置係將第1面上之圖案轉印至第2面上所配置之物 體上，其特徵在於，包含： 對前述第1面上配置之第1圖案照射能量束，將前述 第1圖案，轉印至配置在前述第2面上之感光體上以形成 前述第1圖案之轉印像的製程，該感光體對應所照射之能 量束能量其與顏色相關聯之物理性質會產變化； 對前述第1面上配置之第2圖案照射前述能量束，將 前述第2圖案，以既定之位置關係轉印至形成前述第1圖 案之轉印像之前述感光物體上’以形成前述第2圖案之轉 印像的製程；根據表示前述感光體物理性質變化的資訊來 12 200303039 分別檢測前述第1圖案像與前述第2圖案像，根據該檢測 結果求出與前述第1圖案像及前述第2圖案像之位置關係 相關之資訊的製程；以及’根據前述資訊來評價前述曝光 裝置之特性的製程。 此處，所謂與前述第1圖案像及前述第2圖案像之位 置關係相關之資訊’例如’係指關於第1圖案與第2圖案 之重疊誤差的資訊、關於表示與第1圖案與第2圖案之相 對位置關係對應之設計上相對位置關係之關係的資訊等， 凡可使用於評價曝光裝置之資訊、與第1圖案像與第2圖 像之位置關係相關之資訊的話皆可。 又，第1圖案與第2圖案，可以是不同之圖案，亦可 是相同之圖案。 若根據此方法，由於能根據表示感光體之與顏色相關 聯之物理性質變化的資訊，區別曝光部與未曝光部，因此 ，能在將圖案轉印至感光體上後，不進行顯影處理等而立 即求得關於第1圖案像與第2圖案像之位置關係的資訊， 根據此資訊評價曝光裝置之特性。因此，不需進行顯影處 理所耗費之時間，且能防止在感光體上形成之圖案之轉印 像產生因顯影處理所造成之變形等，與習知使用光阻像等 之情形相較，其結果，能在短時間內以良好之精度來評價 曝光裝置之特性。 此時，形成前述第2圖案之轉印像之製程中，係以前 述第2圖案像之至少一部分重疊於前述感光體上形成有前 述第1圖案之轉印像之區域的方式，將前述第2圖案轉印 13 200303039 至前述感光體上，前述位置關係之資訊，係關於前述第l 圖案與第2圖案之重疊誤差的資訊。 本發明之第2評價方法中，前述第1圖案與前述第2 圖案係以既定之位置關係，形成在同一圖案形成構件上。 此時，形成前述第2圖案之轉印像之製程中，包含： 從前述第1圖案之轉印時於對應前述既定位置關係之方向 及距離，使前述圖案形成構件與前述感光體相對移動的製 程；以及，在前述相對移動後將前述第2圖案轉印至前述 感光體上的製程。 此時，前述曝光裝置之特性，包含前述圖案形成構件 及前述感光體之至少一方的定位精度。 本發明之第2評價方法中，前述第1圖案與前述第2 圖案係分別形成在不同的圖案形成構件上。 此時，前述曝光裝置之特性，包含前述圖案形成構件 及前述感光體之至少一方的定位精度。 本發明之第2評價方法中，前述圖案像，可藉由根據 表示前述感光體物理性質變化的資訊來抽出曝光部與未曝 光部之交界而加以檢測。 本發明之第2評價方法中，前述物理性質之變化與前 述能量束能量之變化的關係爲非線性。 此時，前述感光體物理性質之變化，在曝光次數爲1 次時與複數次時皆相同。 本發明之第2評價方法中，前述物理性質之變化與前 述能量束能量變化的關係爲線性。 14 200303039 本發明之第2評價方法中，前述物理性質，包含著色 濃度、光之折射率、光之透射率及光之反射率之至少一種 〇 此時，前述物理性質包含著色濃度，顯示前述物理性 質變化之資訊，爲有無著色之資訊。 本發明之第2評價方法中，前述圖案像，係使用經由 前述感光體之透射光及反射光之至少一種來加以檢測。 本發明之第2評價方法，對前述感光體之表面形成有 感光層者，係視前述感光體之膜厚變更前述圖案像之檢測 條件。 本發明之第2評價方法中，顯示前述物理性質變化之 資訊，係對前述感光體之攝影資料進行影像處理而獲得。 此時，前述影像處理，係根據前述攝影資訊中資訊之 最大値與最小値及前述感光體之物理性質變化，與前述能 量束能量之變化的關係來決定臨界値，以該臨界値來將前 述攝像資料加以2値化。 本發明之第2評價方法中，前述圖案像，可使用經由 前述感光體之繞射光來加以檢測。 本發明之第3評價方法，係評價曝光裝置之特性，該 曝光裝置係將第1面上之圖案轉印至第2面上所配置之物 體上，其特徵在於，包含： 將感光體配置在前述第2面上，不在前述第1面上配 置圖案，而對前述感光體上照射能量束的製程，該感光體 對應所照射之能量束能量其與顏色相關聯之物理性質會產 15 200303039 變化；以及 檢測表示前述感光體物理性質變化的資訊，根據該檢 測結果來評價前述曝光裝置之特性的製程。 若根據此方法，由於能根據表示感光體之與顏色相關 聯之物理性質變化的資訊，來求出所照射之能量束能量的 變化，因此，例如在對感光體上照射能量束後，藉由立即 測量在感光體上能量束所照射之區域（照射區域）內設定之複 數個測量點的感光體之物理性質變化，即能檢測出各測量 點間能量之差異。因此，與僅照射與測量點數相同次數之 能量束，來測量在各測量點之習知方法相較，能在短時間 內評價曝光裝置之特性。 此外，由於能量束之照射次數僅需一次，因此，光源 本身能量變動的影響對各測量點之測量結果而言皆相同， 所獲得之曝光裝置特性，不致於包含因光源之能量變動所 造成之誤差。而且，由於感光體之靈敏度，不會依存於光 照射角度而在照射區域全面皆大致相同，因此，在照射區 域邊緣部之測量結果之可靠度不致降低。是以，與使用習 知感測器等之情形相較，能以良好之精度評價曝光裝置之 特性。 此時，前述曝光裝置之特性，包含前述能量束照射區 域內之照度分佈。 本發明之第3評價方法中，顯示前述物理性質變化之 資訊，係使用經由前述感光體之反射光及透射光之至少一 者來加以檢測。 200303039 本發明之第3評價方法中，前述物理性質之變化與前 述能量束能量之變化的關係爲線性。 本發明之第3評價方法中，前述物理性質，包含著色 濃度、光之折射率、光之透射率及光之反射率之至少一種 〇 本發明之曝光裝置之製造方法，包含調整製程，其特 徵在於··前述調整製程係根據本發明之第1至第3評價方 法之任一者之評價結果，來調整前述曝光裝置之特性。 根據此方法，由於可根據本發明之第1至第3評價方 法之任一者，以良好之精度評價曝光裝置之特性，於調整 製程中，根據該評價結果來調整前述曝光裝置之特性，因 此能製造曝光精度優異之曝光裝置。 【實施方式】 《第1實施形態》 以下，根據圖1〜圖5A說明本發明之第1實施形態。 圖1中，顯示了適合實施本發明之曝光方法的曝光裝 置100。此曝光裝置100，係步進掃描（step & scan)方式之投 影曝光裝置。 此曝光裝置1〇〇，具備：照明系統IOP，用以保持作爲 圖案形成構件之標線片R的標線片載台RST，用以驅動標 線片載台RST之標線片載台驅動系統29，將標線片R上形 成之圖案之像投影至作爲感光體之晶圓W上的投影光學系 統PL，保持晶圓w移動於2維平面（XY平面內）的XY載台 ’用以驅動χγ載台20的晶圓載台系統22，以及控制此 17 200303039 等的控制系統等。此控制系統，係以統籌控制裝置全體之 主控制裝置28爲中心而構成。 照明系統IOP，係由KrF準分子雷射或ArF準分子雷 射等所構成之光源，包含照度均勻化光學系統（含有光學積 分器（複眼透鏡、內面反射型積分器、或繞射光學元件等）) 、作爲照明視野光闌之標線片遮簾、中繼透鏡系統及聚光 透鏡系統等（皆未圖示）之照明光學系統所構成。 根據照明系統IOP，將光源所產生之作爲曝光用光（能 量束）之照明光（以下，稱「照明光IL」），以照度均勻化光 學系統轉換成照度分佈大致均勻之光束。由照度均勻化光 學系統射出之照明光IL，透過中繼透鏡系統到達標線片遮 簾。通過此標線片遮簾之開口的光束，通過中繼透鏡系統 、聚光透鏡系統而以均勻的照度分佈來照射標線片載台 RST上所保持之標線片R上之矩形狹縫狀的照明區域。 標線片載台RST，係配置在照明系統IOP之圖1中下 方。於此標線片載台RST上，透過未圖示之真空夾頭等吸 附保持標線片R。標線片載台RST，能微驅動於Y軸方向（ 圖1之紙面左右方向）、X軸方向（圖1之與紙面正交方向） 及0 z方向（繞正交於XY面之Z軸的方向），且能以指定之 掃描速度驅動於既定之掃描方向（此處，爲Y方向） 於標線片載台RST上，固定有用以反射來自標線片雷 射干涉播（以下稱「標線片干涉器」）21之雷射光束的移動 鏡15，標線片載台RST於移動面內的位置，係藉由標線片 雷射干涉計21，以例如0.5〜lnm程度的分解能力隨時加以 18 200303039 檢測。此處’實際上’在標線片載台RST上設有具有正交 ★ 於Y軸方向之反射面的移動鏡，及具有正交於X軸方向之 反射面的移動鏡’且對應此等移動鏡設有標線片γ干涉與 標線片X干涉器，但圖1中係代表性的顯示移動鏡15、標 線片干涉器21。又，例如將標線片載台；rST的端面予以鏡 面加工來形成反射面（相當於移動鏡15的反射面）亦可。此 外’亦可取代標線片載台RST之掃描方向（本實施形態爲Y 軸方向）位置檢測所使用之延伸於X軸方向的反射面，而使 用至少1個角隅稜鏡型移動鏡。此處，標線片Y干涉器與 標線片X干涉器的至少一方，例如標線片Y干涉器，係具 有2測長軸之2軸干涉器，根據該標線片γ干涉器之測量 値，除了能測量標線片載台RST的Y位置，亦能測量0 z 的旋轉。 來自標線片干涉器21的標線片載台RST的位置資訊， 被送至主控裝置28，主控裝置28根據標線片載台rSt的 k置資訊，透過標線片載台驅動系統29來驅動標線片載台 RST。 標線片R，舉一例而言，係於大致正方形之作爲光罩 基板之玻璃基板中央部形成圖案區域，於圖案區域之X軸 方向兩側，形成有至少一對標線片對準標記（皆省略圖示）。 投影光學系統PL，係於標線片載台RST的圖1的下方 ’配置成其光軸ΑΧρ的方向爲正交於χγ面之z軸方向。 作爲此投影光學系統PL，此處，係使用兩側遠心式之縮小 系統，由複數片透鏡元件（具有Ζ軸方向之共用光軸ΑΧρ) 19 200303039 所構成之折射光學系統。又，構成投影光學系統PL之複數 片透鏡元件中之至少1片，本實施形態中爲2片以上之透 鏡元件，係根據來自主控制裝置28之指令，以未圖示之成 像特性修正控制器加以控制，而能調整投影光學系統PL之 成像特性（光學特性的一部分），例如，倍率、失真、慧形像 差、及像面彎曲等。 XY載台20,實際上，係由在未圖示之基座上移動於Y 軸方向之Y載台，與在此Y載台上移動於X軸方向之X載 台所構成，圖1中係將此等顯示爲XY載台20。於此XY載 台20上裝載晶圓台18，於此晶圓台18上，透過未圖示之 晶圓保持具以真空吸附等方式保持晶圓W。 XY載台20，不僅能移動於掃描方向（Y軸方向），亦能 移動於與掃描方向正交之非掃描方向（X軸方向），以使晶圓 W上複數個曝光照射區域，位於與前述照明區域共軛之投 影光學系統PL之視野內之投影區域。然後，進行步進掃描 動作，亦即，反覆對晶圓W上之各曝光照射區域進行掃描 (scan)曝光之動作，與移動至用以進行次一曝光照射之加速 開始位置之動作。 晶圓台18，係用以將保持晶圓W之晶圓保持具微驅動 於Z軸方向、及相對XY面之傾斜方向。此晶圓台18上面 ，設有移動鏡24，並對向於移動鏡24之反射面設有雷射干 涉器26，此雷射干涉器26，係對移動鏡24投射雷射光束 ，藉接收其反射光來測量晶圓台18於XY面內的位置。又 ，實際上，移動鏡包含具有正交於X軸之反射面的X移動 20 200303039 鏡、與具有正交於γ軸之反射面的γ移動鏡，對應於此， 曰曰圓干涉器亦分別設有X方向位置測量用之X雷射千涉器 、與Υ方向位置測量用之γ雷射干涉器，圖1中，係代表 性的顯示爲移動鏡24、雷射干涉器26。又，例如，亦可對 晶圓台18之端面進行鏡面加工來形成反射面（相當於移動 鏡24之反射面）。此外，X雷射干涉器及γ雷射干渉器係 具有複數個測長軸之多軸干涉器，除了晶圓台18之χ、γ 位置之外，亦可測量旋轉（縱向搖擺（繞Ζ軸旋轉的0 ζ旋轉 ))、橫搖（繞X軸旋轉的0 X旋轉）、上下搖擺（roiling)(繞γ 軸旋轉的0 y旋轉）。因此，以下之說明中，係設定以雷射 干涉器26來測量晶圓台18之X、γ、0 z、0 X、0 y等5 自由度方向之位置。又，由以此方式測量之X座標及γ座 標構成之座標系統（X，γ)，以下，係稱爲「載台座標系統」 。此外’亦可將多軸干涉器傾斜45。，透過設置在晶圓台 18之反射面’將雷射光束照射至裝載投影光學系統之 架台（未圖示）上所設之反射面，來檢測於投影光學系統PL 之光軸方向（Z軸方向）的相對位置資訊。 雷射干涉器26之測量値係供應至主控制裝置28，主控 制裝置28持續監測此雷射干涉器26之測量値，透過晶圓 載台驅動系統22來驅動XY載台20，據以進行晶圓台18 之位置控制。 又，晶圓W表面之Z軸方向位置及傾斜量，例如，係 使用日本專利特開平6-283403號公報及與此對應之美國專 利第5448332號等中所揭示之由具有送光系統、及受光系 21 200303039 統之斜入射方式之多點焦點位置檢測系統所構成之聚焦感 測器（皆未圖示）來加以測量。此聚焦感測器之測量値亦係供 應至主控制裝置28，主控制裝置28，根據聚焦感測器之測 量値，透過晶圓載台驅動系統22使晶圓台18移動於Z軸 方向，以控制晶圓W於投影光學系統PL之光軸方向的位 置及傾斜。又，本案援用上述公報及對應美國專利之揭示 作爲本說明書記載的一部份。 於晶圓台18上，以其表面與晶圓W之表面同高度之方 式固定有基準板FP。此基準板FP之表面，形成有各種基 準標記，其中包含後述對準檢測系統AS之基準線測量等所 使用之基準標記。 在投影光學系統PL之鏡筒側面，安裝有離軸（off-ax1S) 方式之對準檢測系統AS。作爲此對準檢測系統AS，係使 用場效影像對準（FIA: Field Image Alignment)系之離軸對準 感測器，此感測器係藉由鹵素燈等光源所產生之寬頻帶光 來進行照明，並對CCD攝影機等所拍攝之晶圓上之對準標 記（或基準板FP上之基準標記）之影像資料進行影像處理以 測量標記位置。 對準控制裝置16，除了將來自對準檢測系統AS之資 訊予以A/D轉換外，並參照雷射干涉器26之測量値來檢 測出標記位置。此檢測結果，從對準控制裝置16供應至主 控制裝置28。 再者，本實施形態的曝光裝置100，雖未圖示，但在標 線片R之上方，設有例如日本專利特開平7-176468號公報 22 200303039 及與此對應之美國專利第5646413號等所揭示之由使用曝 光波長之光的TTR(Through The Reticle)對準系所構成之一 對線片對準系統，其係透過投影光學系統PL用以同時檢測 標線片R上的標線片標記、或標線片載台RST上之基準標 記與基準板FP上之標記。此等標線片對準系統的檢測信號 ，透過對準控制裝置16供應至主控制裝置28。又，本案援 用上述公報及對應美國專利之揭示作爲本說明書記載的一 部份。 主控制裝置28,包含CPU(中央處理器）、記憶體（ROM 、RAM)、以及由各種介面等所組成之微電腦（或工作站）而 構成，例如，統籌控制標線片R與晶圓W之同步掃描、晶 圓W之步進動作、曝光時序等，以確實地進行曝光動作。 此外，主控制裝置28與記憶裝置27連接，能對記憶裝置 27進行各種資料之儲存及讀取。 接著，說明第1實施形態中，標線片R之圖案區域內 所配置之測量用圖案PU。 測量用圖案PU，例如，如圖2所示，係由具既定線寬 、延伸於X軸方向之3條線圖案（line pattern)以週期性配置 之線與間隙（line & space，以下，簡稱爲「L/S」）圖案所 構成。又，L/S圖案之形成條件（週期、佔空比、條數）並 無限制。此外，本第1實施形態中，係設標線片R上之圖 案部分（3條線圖案）爲遮光部。又，本實施形態中，照明光 IL所照射之標線片R上之照明區域，係於投影光學系統PL 視野內以光軸ΑΧρ爲中心向X軸方向延伸之細長矩形，於 23 200303039 標線片R上於該圖案區域內之5處形成有測量用圖案PU， 以當定位標線片R使投影光學系統PL之光軸Αχρ與中心 一致時，例如，於照明區域內之中心及4角分別配置測量 用圖案PU。又，後述最佳聚焦位置之測量動作，僅使用配 置在照明區域中心的1個測量用圖案，於進行轉印時藉由 標線片遮簾之遮蔽，使照明光IL不致照射於其餘4個測量 用圖案。 此外，晶圓W上，如圖2所示，塗有每單位面積之累 積曝光量（能量）爲既定臨界値以上時，著色濃度爲一定（= C1)之感光劑。亦即，著色濃度之變化與累積曝光量之變化 爲非線性關係。又，本第1實施形態中，係設1次曝光於 晶圓W上曝光部之每單位面積之累積曝光量爲El(>既定 臨界値）。又，圖2Β中，累積曝光量Ε2，係累積曝光量Ε1 之2倍的累積曝光量。此外，以下之說明中，爲方便起見 ，所謂「累積曝光量」，係指「每單位面積之累積曝光量 j ° 接著，使用圖3之流程圖，來說明使用以前述方式構 成之曝光裝置100，一邊變化晶圓W之聚焦位置1〜 Μ，Μ例如爲13)，一邊將設定在晶圓W上之複數個假想矩 形區域作爲目標區域分別轉印測量用圖案PU，以求出投影 光學系統PL之最佳聚焦位置之動作的流程。圖3之流程圖 ，係對應以主控制裝置28之CPU所實施之一連串的處理運 算。 圖3之步驟401，係使用未圖示之標線片供料器將標線 24 200303039 片安裝於標線片載台RST上。 步驟405，例如，係使用前述標線片對準系統，透過投 影光學系統PL，來檢測至少一對的標線片對準標記、及與 此對應形成在基準板FP表面之至少一對基準標記的相對位 置。然後，根據此時標線片干涉器21及雷射干涉器26之 測定値，來求出以標線片干涉器21之測長軸所規定之標線 片載台座標系統、與以雷射干涉器26之測長軸所規定之晶 圓載台座標系統的關係。亦即，以此方式進行標線片對準 。又，藉由此標線片對準，標線片R即被定位成其中心與 投影光學系統PL之光軸Αχρ —致，於前述照明區域之中心 設定測量用圖案PU。 步驟407，係進行聚焦位置目標値之初始化。亦即，於 計數器i設定初始値^ 1」，以將晶圓WT之聚焦位置目標 値Z1設定爲ζα<-ι)。本實施形態中，計數器i，除用於晶 圓W之聚焦位置目標値之設定外，亦使用於曝光時晶圓W 之移動目標位置之設定。又，本實施形態中，例如，係以 關於投影光學系統PL之已知最佳聚焦位置（設計値等）爲中 心，使晶圓W之聚焦位置，以ΛΖ之刻度由Zi變化至 Z/ZfZi'ZM)。此時，由於i = 1，因此最初之目標區域即 爲曝光對象區域。 步驟409，係一邊監測來自未圖示之聚焦感測器之測量 値一邊將晶圓台18微驅動於Z軸方向，以使晶圓W之聚 焦位置與目標値Zj(此時爲ZD—致。 步驟411，係一邊監測雷射干涉器26之測量結果一邊 25 200303039 透過晶圓載台驅動系統22來移動XY載台20，據以使晶圓 W移動至投影光學系統PL之下方位置。此時，參照計數器 i來移動XY載台20以使第i個（此時爲第1個）目標區域成 爲曝光對象區域。 步驟413，係在此狀態下進行曝光。此處，由於目的爲 測量晶圓W之最佳聚焦位置，因此，曝光中，標線片R與 晶圓W，亦即，標線片載台RST與XY載台20係靜止不動 。據此，透過投影光學系統PL將測量用圖案PU轉印至晶 圓上之曝光對象區域。本第1實施形態中，由於係將晶圓 W上曝光部之累積曝光量設定爲E1，因此，如圖4所示， 在晶圓上之曝光對象區域，曝光部之感光劑被著色成著色 濃度C1(圖4A中以斜線顯示者）。 圖3之步驟415,係參照所設定之聚焦位置目標値（計 數器i)，來判斷在所預定之所有Μ個聚焦位置之轉印是否 皆已進行。此處，由於僅完成了在最初之目標値的轉印 ，因此步驟415之判斷爲否定，而移至步驟417。 步驟417，係藉由對計數器i進行1的增加（i —i+ 1)， 在聚焦位置之目標値中加上ΔΖ，且使下一個目標區域爲曝 光對象區域後，回到步驟409。 以下，直到步驟415之判斷爲肯定爲止，反覆進行步 驟 409—411-^413-^415—417 之處理、判斷。 於步驟415中，當所設定之聚焦位置之目標値成爲ΖΜ( 亦即，計數器i之値成爲Μ時）時，於步驟415之判斷即爲 肯定，而移至步驟421。 26 200303039 步驟421，係將代表聚焦位置及對應之已曝光區域號碼 的計數器k設爲1，將在最初之聚焦位置Zi曝光之區域（曝 光照射區域）作爲測量對象區域。 步驟423，係藉由一邊監測雷射干涉器26之測量値， 一邊透過晶圓載台驅動系統22來控制XY載台20，使晶圓 W移動至晶圓W上之測量對象區域能被對準檢測系統AS 檢測出之位置。 然後，使用對準檢測系統AS來拍攝晶圓W上之測量 對象區域（形成有測量用圖案PU之潛像的部分），擷取該影 像資料。例如，在攝影資料係各像素以8位元加以數位化 時，係以28= 256色調之濃度加以擷取。亦即，攝影資料係 以0〜255之數値加以顯示。接著，求出所擷取之攝影資料 中資料値之最大値與最小値，例如，以其中間之値爲臨界 値加以2値化。此處，在資料値大於臨界値時轉換爲「1」 ，未達臨界値時轉換爲「0」。因此，「無著色」（即未曝 光部）對應「1」、「有著色」（即曝光部）即對應「0」。然 後，如圖4所示，設定一通過測量對象區域之中心，延伸 於Y軸方向之掃描線L1，根據已2値化之攝影資料來抽出 掃描線L1上之攝影資料。進一步的，根據所抽出之攝影資 料，求出曝光部與未曝光部之交界，如圖4C所示，測量L /S圖案之週期方向中，中央之線圖案之線寬値LW。此處 ，之所以將中央之線圖案作爲測量對象，係爲了除去慧形 像差之影響之故。 步驟425，係參照計數器k，來判斷是否在所有曝光照 27 200303039 射區域（測量對象區域）皆已進行了線寬値之測量。此處，由 於k=l，亦即，僅針對最初的曝光照射區域進行了線寬値 之測量，因此步驟425之判斷爲否定，而移至步驟427。 步驟427，係藉由對計數器k進行1的增加（+ 1)，以 下一個曝光照射區域爲測量對象區域後，回到步驟423。 以下，直到步驟425之判斷爲肯定爲止，反覆進行步 驟423— 425— 427之處理、判斷。 在所有曝光照射區域之線寬値之測量結束後，計數器k 之値即成爲Μ，步驟425之判斷爲肯定，而移至步驟429。 步驟429，係根據所測量之線寬値與此時晶圓W之聚 焦位置，例如，如圖5Α所示，以統計運算來求出顯示線寬 値與聚焦位置之關聯的近似値。然後，由該近似値之極値 判斷最佳聚焦位置，將所得之最佳聚焦位置儲存在記億裝 置27，且顯示於未圖示之顯示裝置，結束處理。 如以上之說明，根據本第1實施形態，由於能根據顯 示感光劑著色濃度變化之資訊（具體而言，係指有無著色之 資訊），來區別「曝光部」與「未曝光部」，因此，在將測 量用圖案PU轉印至晶圓W上後，能不對晶圓W進行顯影 處理，直接測量各圖案轉印像之線寬値。因此，能除去因 顯影處理所引起之晶圓W之變形等誤差因素，與習知利用 光阻像等之情形相較，能以良好之精度求出最佳聚焦位置 〇 又，使用習知光阻之情形中，由於係經過顯影處理等 後進行線寬値之測量，因此，在曝光後至能進行線寬値之 28 200303039 測量爲止，單純計算約需4〜6分鐘（舉一例而言，加熱1〜 2分鐘、冷卻1分鐘、顯影1〜2分鐘、乾燥1分鐘）。然而 ，若根據本第1實施形態，由於在曝光後，能立即進行線 寬値之測量，因此不需要顯影處理等之時間，能大幅提昇 生產率。此外，本實施形態中，雖係求取在照明區域，亦 即，關於投影光學系統PL與照明區域共軛之投影區域內之 既定點（本實施形態中，爲中心）之最佳聚焦位置，但亦可求 取焦點深度（DOF)來加以取代，或倂用之。此外，在投影光 學系統PL視野（投影區域）內之最佳焦點位置之測量點，亦 可是其中心以外之點、或複數點。 又，亦可以和上述第1實施形態同樣之方式，作爲投 影光學系統PL之光學特性，來評價像面彎曲、慧形像差、 球面像差、非點像差等之像差。 例如，在對應投影光學系統PL視野（特別是前述投影 區域）內之複數個測量點的位置，分別配置測量用圖案PU， 以和前述同樣之方式，求出各測量點之最佳聚焦位置。然 後，即能根據該測量結果，例如，以最小平方法求出像面 彎曲。此時，可將測量用圖案PU依序定位於對應各測量點 之位置，或者，亦可對應複數之測量點使用形成有複數個 測量用圖案PU之標線片。 又，測量慧形像差時，作爲測量用圖案，例如，係將 具有5條（或2條）線圖案之L/S圖案透過投影光學系統PL 轉印至晶圓W上。然後，根據感光劑著色之有無分別測量 兩端之線圖案之線寬Ll，L5，由該測量結果，算出例如以 29 200303039 下式（1)所代表之線寬異常値，來求出慧形像差。 線寬異常値= (L1 · L5)/(L1 + L5) ”·（1) 測量球面像差時，以佔空比不同之複數種類之L/S圖 案作爲測量用圖案，分別於各佔空比進行前述最佳聚焦位 置之測量。然後，根據該等最佳聚焦位置之差求出球面像 差。 又，非點像差之測量，係將週期方向正交之2種週期 圖案作爲測量用圖案，分別就各週期圖案進行前述最佳聚 焦位置之測量。然後，根據兩者之差求出非點像差。 又，上述第1實施形態，雖係針對標線片R上之圖案 部分爲遮光部之情形作了說明，但亦可以是透光部。此係 因爲無論何種情形，皆能根據有無著色之資訊來分別區別 「曝光部」與「未曝光部」之故。 此外，上述第1實施形態中，雖係根據所轉印之像之 線寬値與晶圓W之聚焦位置的相關關係來求出最佳聚焦位 置，但並不限於此，例如，亦可根據所轉印之像之對比與 晶圓W之聚焦位置的相關關係來求出最佳聚焦位置。此係 因，藉由對攝影資料進行影像處理，即能求出像之對比之 故。 又，上述第1實施形態中，雖係設定1條掃描線L1， 根據該掃描線L1上之攝影資料求出線寬値，但並不限於此 ，例如，亦可設定複數條掃描線，而求出於各掃描線所得 之線寬値之平均値。 又，上述第1實施形態中，雖係使用累積曝光量變化 200303039 與著色濃度變化之關係爲非線性之感光劑，但並不限於此 ，亦可使用後述累積曝光量變化與著色濃度變化之關係爲 線性之感光劑。此係因，在此場合，亦能根據有無著色之 資訊（與前述同樣的使用既定臨界値來將攝影資料（影像資料 )力口 2値化者），來區別「曝光部」與「未曝光部」之故。 又，上述第1實施形態中，作爲測量用圖案PU，雖係 使用3條線圖案週期性排列之L/S圖案，但並不限於此。 再者，亦可以著色濃度之差異來檢測前述SMP聚焦測 量法所使用之楔形標記。例如，累積曝光量變化與著色濃 度變化之關係爲非線性，如圖5B所示，將累積曝光量爲 E3時無著色、累積曝光量爲E4時著色濃度爲C2之感光劑 塗在晶圓W上，設1次曝光在晶圓W上曝光部之累積曝光 量爲E3。 此時，例如，將延伸於第1方向之第1線圖案轉印至 經晶圓W上，再於該轉印區域重疊轉印延伸於與第1方向 不同之第2方向的第2線圖案時，例如，如圖5C所示，於 晶圓W上形成部分重疊之第1線圖案之轉印像LP1與第2 線圖案之轉印像LP2。此處，由於1次曝光部之累積曝光 量爲E3，因此感光劑雖未著色，但如圖5C所示，由於2 條線圖案重疊的部分爲2次曝光部，累積曝光量爲E4，因 此該部分感光劑會被著色成著色濃度C2。亦即，不需對晶 圓W進行顯影處理，即能檢測楔形標記。接著，以和習知 SMP聚焦測量法同樣的，於複數位置將楔形標記形成在晶 圚上’例如使用對準檢測系統AS，來測量楔形標記像之長 31 200303039 邊方向長度。然後，將顯示聚焦位置與楔形標記像長度之 相關關係的近似曲線之極大値附近以既定切割等級加以切 割，將所得之聚焦位置範圍之中點判斷爲最佳聚焦位置。 此場合，由於能在重疊轉印後，立即進行楔形標記像長度 之測量，因此能防止顯影處理等所造成之晶圓w變形等， 以及因製程影響造成楔形標記之尖的前端部分形狀變化。 因此，與習知利用光阻像之情形相較，能以良好之精度求 出最佳聚焦位置。 此外，亦能評價標線片載台RST與XY載台20之同步 精度。例如，在標線片R上，於掃描方向配置複數條具有 既定線寬之圖案，一邊同步控制標線片載台RST與XY載 台20 —邊使其相對掃描，將各圖案轉印至晶圓w上。亦即 ’進行掃描曝光。然後，根據感光劑著色之有無，分別測 量晶圓W上所形成之各圖案轉印像之線寬値，根據該測量 結果來評價兩載台之同步精度。亦即，各線寬値大致一定 的話’即判斷同步精度佳，另一方面，若各線寬値之分佈 大的話’即判斷同步精度不佳。再者，作爲投影光學系統 PL之光學特性，亦可測量投影倍率及變形（distC)rtion)等。 此場合’不需要改變晶圓之Z軸方向位置來進行複數次曝 光’在照明光所照射之照明區域內，於對應前述投影區域 內複數個測量點之位置分別配置測量用圖案PU，以進行晶 圓之曝光即可。又，上述實施形態中，於測量用圖案PU之 轉印時雖係使標線片與晶圓爲靜止狀態，但以掃描曝光來 進行測量用圖案PU之轉印亦可。據此，能測量動態之變形 32 200303039 等。 《第2實施形態》 以下，根據圖6A〜圖8B，說明本發明之第2實施形態 〇 本第2實施形態，係取下述情形爲例進行說明，亦即 ，使用前述曝光裝置100，將測量用圖案重疊轉印至晶圓上 ，以評價XY載台20之定位精度（步進精度）的情形。 首先，說明本第2實施形態所使用之標線片R上形成 之測量用圖案PB。測量用圖案PB，舉一例而言，係如圖 6A所不，由第1圖案PM1與第2圖案PM2所構成。進一 步的，第1圖案PM1之構成，包含1個矩形圖案，以及包 挾該矩形圖案、配置在Y軸方向兩側之各2條的線圖案， 而第2圖案PM2之構成，則包含於Y軸方向相隔的2個矩 形圖案，以及被此等矩形圖案包挾配置之3圖線圖案。又 ，設第1圖案PM1區域與第2圖案PM2區域之大小相同， Y軸方向之各區域長度爲YR。此外，本第2實施形態中， 係於第1圖案PM1之圖6A中圖面右側（+Y側）配置第2圖 案PM2。又，本第2實施形態中，係設標線片R上之圖案 部分（矩形圖案及線圖案）爲遮光部。此外，本實施形態中， 雖將第1圖案PM1與第2圖案PM2於Y軸方向相鄰形成， 但亦可將第1圖案PM1與第2圖案PM2於Y軸方向相隔一 既定距離來形成。 又，晶圓W上，與第1實施形態同樣的，塗有感測累 積曝光量在既定臨界値以上時，著色濃度一定（參照圖2B) 33 200303039 之感光劑。又，1次曝光在晶圓W上曝光部之累積曝光量 設爲El(>既定臨界値）。 圖7，係對應以主控制裝置28之CPU所實施之一連串 處理運算的流程圖，以下，使用此流程圖說明本第2實施 形態。 圖7之步驟501〜步驟505，係進行與第1實施形態中 步驟401〜步驟405相同之處理。 步驟507，係設定N個假想矩形區域來作爲用以轉印 測量用圖案PB之晶圓W上之目標區域。然後，將表示目 標區域設定號碼之計數器i設定爲1，將最初之目標區域設 爲曝光對象區域。 步驟509，係一邊監測雷射干涉器26之測量結果一邊 透過晶圓載台驅動系統22來移動XY載台20，以使晶圓W 移動至投影光學系統PL之下方位置。然後，移動XY載台 20，以使晶圓W之位置成爲用以使晶圓W上之曝光對象區 域曝光之位置。 步驟511，係在此狀態下進行第1次的曝光。此處，由 於目的爲測量XY載台20之定位精度，因此，曝光中，標 線片R與晶圓W，亦即，標線片載台RST與XY載台20係 靜止不動。據此，透過投影光學系統PL將測量用圖案PB 轉印至晶圓上之曝光對象區域。本第2實施形態中，由於 係將晶圓W上曝光部之累積曝光量設定爲E1，因此，如圖 6B所示，在晶圓上之曝光對象區域，曝光部之感光劑被著 色成著色濃度C1(圖6B中以斜線顯示者）。 34 200303039 圖7之步驟513，爲了將第2圖案PM2之像重疊轉印 至形成了第1圖案PM1之轉印像的晶圓W上之曝光對象區 域，係使XY載台20於Y軸方向移動以下式（2)求出之距離 YW。 YW= YR · β -.(2) 此處，/5係投影光學系統PL之投影倍率。 步驟515，係在此狀態下進行第2次曝光。據此，如圖 6C所示，在將晶圓W上之曝光對象區域於Y軸方向位移 距離YW之區域（以下，爲方便起見，稱「移位區域」），透 過投影光學系統PL轉印測量用圖案PB。由於晶圓W上曝 光部之累積曝光量係設定成E1，因此，晶圓W上之移位區 域，新曝光部分（1次曝光部）之感光劑被著色爲著色濃度C1 。又，2次曝光部分（2次曝光部）之累積曝光量雖成爲E2， 但由於著色濃度變化與累積曝光量變化之關係爲非線性（參 照圖2)，因此2次曝光部分之感光劑仍然爲著色濃度C1。 又，圖6C中，係以虛線表示曝光對象區域，以實線表示移 位區域。此外，晶圓W上之曝光對象區域與移位區域重疊 之區域，以下，爲方便起見，稱「重疊區域」。 此處，於重疊區域，形成包含下列圖案之L/S圖案， 亦即，該L/S圖案包含由第1圖案轉印像之兩端各2條共 4條之線圖案像、與第2圖案轉印像之中央3條線圖案像所 構成之7條線圖案像。此L/S圖案之像，設計上，係被設 計成以一定之節距成爲佔空比50%之L/S圖案像。 圖7之步驟517，係參照計數器i，來判斷是否對所有 35 200303039 的目標區域進行了測量用圖案PB之轉印。此處，由於i二1 ，亦即，僅對最初的目標進行了轉印，因此，於步驟517 之判斷爲否定，而移至步驟519。 步驟519，係對計數器k進行1的增加（+ 1)，以下一 個曝光照射區域爲測量對象區域後，回到步驟509。 以下，直到步驟517之判斷爲肯定爲止，反覆進行步 驟509至519之處理、判斷。 對所有曝光照射區域之測量用圖案PB之轉印結束後， 計數器i之値即成爲N，步驟517之判斷爲肯定，而移至步 驟 521。 步驟521，係藉由一邊監測雷射干涉器26之測量値， 一邊透過晶圓載台驅動系統22來控制XY載台22，將晶圓 W移動至晶圓W上之測量對象區域（重疊區域）能以對準檢 測系統AS加以檢測之位置。 然後，使用對準檢測系統AS拍攝晶圓W上之測量對 象區域，取得攝影資料。進一步的，於前述第1實施形態 同樣之方式，將攝影資料中之資料値於各像素進行「1」與 「0」之2値化。因此，「無著色」（亦即未曝光部）即對應 於「1」、「有著色」（亦即曝光部）即對應於「0」。然後， 如圖8A所示，設定通過測量對象區域中心、延伸於Y軸方 向之掃描線L2，根據2値化之攝影資料抽出在掃描線L2 上之攝影資料。進一步的，根據所抽出之攝影資料，求出 曝光部與未曝光部之交界，如圖8B所示，測量第1次轉印 所形成之線圖案像與第2次轉印所形成之線圖案像於Y軸 36 200303039 方向之間隔DWl，DW2。然後，使用下式（3)求出位置偏移 量DW。 DW= DW1 · DW2 …（3) 圖7之步驟525，係參照計數器m，判斷是否在所有重 疊區域之位置偏移量皆已算出。此處，由於m= 1 ’亦即’ 僅在最初的重疊區域進行了位置偏移量之算出’因此步驟 525之判斷爲否定，而移至步驟527 ° 步驟527，係增加計數器m之値（+丨），以下一個重疊 區域爲測量對象區域後，回到步驟523。 以下，直到步驟525之判斷爲肯定爲止’反覆進行步 驟523— 525-> 527之處理、判斷。 在晶圓W上所有重疊區域之位置偏移量之算出結束後 ，計數器m之値即成爲N，步驟525之判斷爲肯定’而移 至步驟529。 步驟529，係對在所有重疊區域求出之位置偏移量DW 進行統計處理（例如，平均化），來求出XY載台20之定位 精度。然後，將所得之定位精度儲存於記憶裝置27，且顯 不於未圖不之顯示裝置，結束處理。200303039 发明, invention [Technical field to which the invention belongs] The present invention relates to an evaluation method and a manufacturing method of an exposure device. In short, it relates to an evaluation of an exposure device without developing an exposed object on which a pattern transfer image is formed. A method for evaluating characteristics, and a method for manufacturing an exposure device that adjusts the characteristics of the exposure device during the adjustment process based on the evaluation results of the evaluation method. [Prior technology] The lithography process used to manufacture semiconductor devices (integrated circuits) has used a pattern formed on a photomask or reticle (hereinafter referred to as a reticle) through a projection optical system. Various projection exposure devices that are transferred to a substrate coated with a photoresist or the like or a substrate such as a glass plate (hereinafter referred to as a wafer). Photoresist is generally developed by using a photosensitive polymer material and utilizing the difference in dissolution speed or solubility between the exposed and unexposed areas. This photoresist is largely divided into a positive type photoresist dissolved by the development of the exposed portion and a negative type photoresist dissolved by the development of the unexposed portion. For example, a chemically amplified photoresist contains an acid generator as a photosensitizer, and the acid generated by exposure induces a catalyst reaction in subsequent thermal treatment to promote insolubilization (negative type) or dissolution (positive type) of the developer. In addition, with the increasing accumulation of semiconductor devices, projection exposure devices are also required to transfer finer patterns with good accuracy. In order to meet this requirement, it is important to be able to correctly evaluate the characteristics of the exposure device, for example, to correctly evaluate the optical characteristics of the projection optical system, the positioning accuracy of the reticle and wafer, and the illuminance distribution of the exposure energy beam. 200303039 The optical characteristics of the projection optical system, for example, the correct measurement of the image surface shape of a pattern is based on the premise that the optimal focus position (best focus position) of each measurement point in the field of view of the projection optical system can be accurately measured. As the measurement method of this optimal focus position, the following two methods are mainly known. The first is a measurement method called the CD / focus method. In this measurement method, a predetermined reticle pattern (for example, a line & space pattern) is transferred to a plurality of wafer positions in the optical axis direction of the projection optical system onto a test wafer. Then, the line width 値 of the photoresist image (the transferred pattern image) obtained by developing the test wafer is measured with a scanning electron microscope (SEM), etc., and the line width 値 and the projection optical system light are measured according to the line width 値The relationship between the wafer position in the axial direction (hereinafter, also referred to as "focus position") is used to determine the optimal focus position. The other method is a measurement method known by the so-called SMP focus measurement method. This measurement method is to form a wedge-shaped photoresist image on a wafer at a plurality of focus positions, and amplify the change in the width of the photoresist image caused by the difference in focus position and change it in the direction of the growing edge. A mark detection system such as an alignment system for detecting marks on a wafer is used to measure the length of the photoresist image in the long side direction. Then, the maximum curve showing the approximate relationship between the focus position and the photoresist image is cut at a predetermined cutting level, and the midpoint of the obtained focus position range is judged as the optimal focus position. In addition, the wafer positioning accuracy The measurement, for example, is performed in the following order. First, the measurement pattern formed on the reticle pattern surface is transferred to a predetermined area on a wafer that is positioned as the projection position (exposure position) of the measurement pattern. Next, the wafer stage is moved by a predetermined amount of movement in a predetermined direction, and other regions on the wafer are positioned at the projection positions of the aforementioned measurement patterns. At this time, the movement of the wafer stage is performed by the stage control device while monitoring the measurement of a length measuring device (for example, a laser interferometer) for measuring the movement amount of the wafer stage. After the positioning of the wafer is completed, the aforementioned measurement pattern is transferred to other areas on the wafer. Next, the transferred wafer is developed, and the distance between the photoresist images of the measurement pattern on the wafer after development is measured with an appropriate measuring device (e.g., SEM). Then, based on the difference between the measurement 値 and the aforementioned movement amount, the positioning accuracy of the wafer is obtained. Further, the measurement of the illuminance distribution is performed, for example, in the following order. A dedicated sensor is arranged at a predetermined measurement point on the wafer stage, and the reticle is removed from the reticle stage, or a plain glass reticle with no pattern is loaded on the reticle stage The energy beam is irradiated in the upper state. Then, the exposure energy beam from the illumination optical system is projected on the wafer stage through the projection optical system, and a pin hole sensor of the wafer stage is arranged at a measurement point in the projection area. To measure this energy. This measurement is performed repeatedly while moving the pinhole sensor in a matrix shape within the projection area. Then, the illuminance distribution is obtained from the energy measured by a pinhole sensor at each measurement point. In addition, after the exposed wafer is subjected to a development process, a so-called pre-development baking (PEB) heat treatment is performed before the development process. Further, after the development process to form a photoresist image, the developer or rinse solution remaining on or on the photoresist film is evaporated and removed, the photoresist is hardened, and the adhesion with the wafer is strengthened. This is a so-called post-treatment baking (post-200303039 bake) heat treatment. Damage to the wafer caused by these heat treatments may result in expansion, shrinkage, and deformation of the wafer (hereinafter, referred to as "deformation, etc." for convenience). The above-mentioned measurement method of the optimal focus position, regardless of any of the CD / focus method and the SMP focus measurement method, is a measurement result of a photoresist line width obtained by developing a wafer. However, as mentioned earlier, the photoresist image may be deformed because the wafer is damaged by the heat treatment accompanying the development process. Therefore, measurement results such as the line width of the photoresist image will include factors that have nothing to do with the characteristics of the exposure device, and the optimal focus position obtained may contain errors. In addition, when measuring the line width of an image obtained by engraving a wafer on which a photoresist image is formed, the same error may be included. When measuring the positioning accuracy of the above wafers, the measurement results of the distance between the multiple photoresist images obtained by developing the wafers are also used. However, the aforementioned measurement results include errors due to the heat treatment with the development process, so the positioning accuracy obtained may include errors. Furthermore, the measurement of the above-mentioned illumination distribution is because the pinhole sensor is moved in a matrix in the energy beam projection area (illumination area). When the pinhole sensor reaches each measurement point, the energy beam is irradiated at this time. Since the energy is obtained at each measurement point, a measurement operation of the same number of times as the number of measurement points is required, and there is a problem that a lot of time is consumed for measurement. In addition, when measuring at each measurement point, the irradiation energy of the light source is not necessarily the same. Therefore, the obtained illuminance square distribution may include the error of the energy of the light source. In addition, since the light irradiation angle of the pinhole sensor will be different due to the difference in the measurement point position, the sensitivity of the needle 200303039 hole sensor varies with the measurement point position, especially in the periphery of the projection area. There is a concern that the reliability of measurement 値 may decrease. Furthermore, in the near future, as semiconductor devices become more highly integrated, there is no doubt that the accuracy requirements of exposure devices will become stricter. Therefore, it is necessary to be able to measure the characteristics of the exposure device with better accuracy, and the above errors cannot be ignored. The present invention has been made in view of the foregoing circumstances, and a first object thereof is to provide an evaluation method capable of determining the characteristics of an exposure device in a short period of time with good accuracy. A second object of the present invention is to provide a method for manufacturing an exposure apparatus having excellent exposure accuracy. [Summary of the Invention] The first evaluation method of the present invention is to evaluate the characteristics of an exposure device. The exposure device transfers a pattern on the first surface to an object arranged on the second surface through a projection optical system. The method comprises the steps of: irradiating an energy beam onto the pattern disposed on the first surface, and transferring the pattern onto the photoreceptor disposed on the second surface through the projection light system, the photoreceptor corresponding to the irradiated energy beam The physical properties associated with energy and color will change; the pattern image is detected based on information indicating the change in the physical properties of the photoreceptor, and the process of obtaining the formation state of the pattern image is based on the detection result; A process of forming the state to evaluate the characteristics of the aforementioned exposure device. In this specification, the term "photoreceptor" is not limited to those who have photosensitivity as a whole, but also includes, for example, only the surface layer has photosensitivity, and only a part of which has photosensitivity. 200303039 According to the present invention, the Information on changes in physical properties associated with color distinguishes exposed and unexposed parts. Therefore, after the pattern is transferred to the photoreceptor, the formation state of the pattern image can be obtained immediately without performing development processing or the like. Therefore, the development process and the accompanying process (hereinafter referred to as "development process") are not required, and the transfer image of the pattern formed on the photoreceptor can be prevented from being deformed by the development process. Compared with the conventional case where a photoresist image is used, as a result, the characteristics of the exposure device can be evaluated with good accuracy in a short time. At this time, the characteristics of the aforementioned exposure device may include the characteristics of the aforementioned projection optical system. In the first evaluation method of the present invention, the pattern image can be detected by extracting a boundary between an exposed portion and an unexposed portion based on information indicating a change in physical properties of the photoreceptor. In the first evaluation method of the present invention, the relationship between the change in the physical properties and the change in the energy of the energy beam is nonlinear. At this time, the change in the physical properties of the photoreceptor is the same when the number of exposures is one time and when it is plural times. In the first evaluation method of the present invention, the relationship between the change in the physical properties and the change in energy of the energy beam is linear. In the first evaluation method of the present invention, the physical properties include at least one of a coloring density, a refractive index of light, a light transmittance, and a light reflectance. At this time, the physical properties include a coloring concentration, which indicates a change in the physical properties. The information is the information of whether there is coloring. 11 200303039 In the first evaluation method of the present invention, the pattern image is detected using at least one of transmitted light and reflected light passing through the photoreceptor. In the first evaluation method of the present invention, the detection condition of the pattern image is changed depending on the film thickness of the photoreceptor on the surface of the photoreceptor. In the first evaluation method of the present invention, the information showing the change in the physical properties is obtained by image processing the photographic data of the photoreceptor. At this time, the foregoing image processing is based on the relationship between the maximum and minimum values of the information in the photographic information, the change in the physical properties of the photoreceptor, and the change in the energy of the energy beam to determine the criticality. The criticality is used to determine the criticality. The video data is converted into 2 frames. In the first evaluation method of the present invention, the pattern image can be detected using diffracted light passing through the photoreceptor. The second evaluation method of the present invention is to evaluate the characteristics of an exposure device that transfers a pattern on the first surface to an object arranged on the second surface, and is characterized by including: A process in which a first pattern disposed on the first beam is irradiated with an energy beam, and the first pattern is transferred to a photoreceptor disposed on the second surface to form a transfer image of the first pattern. The photoreceptor corresponds to the irradiated image. The energy of the energy beam changes its physical properties related to color. The second pattern arranged on the first surface is irradiated with the energy beam, and the second pattern is transferred to form the first pattern in a predetermined positional relationship. A process of forming a transfer image of the second pattern on the aforementioned photosensitive object of the transfer image; detecting the first pattern image and the second pattern image separately based on information indicating changes in the physical properties of the photoreceptor, A process for obtaining information related to the positional relationship between the first pattern image and the second pattern image based on the detection result; and a process for evaluating characteristics of the exposure device based on the informationHere, the information 'for example' regarding the positional relationship between the first pattern image and the second pattern image, for example, refers to information about the overlap error between the first pattern and the second pattern, and information about the display and the first pattern and the second pattern. Information on the relationship of the design relative positional relationship corresponding to the design's relative positional relationship may be any information that can be used to evaluate the exposure device and information related to the positional relationship of the first pattern image and the second image. The first pattern and the second pattern may be different patterns or the same pattern. According to this method, since the exposed part and the unexposed part can be distinguished based on the information indicating the change in the physical properties of the photoreceptor in relation to the color, the pattern can be transferred to the photoreceptor without developing processing or the like. Information on the positional relationship between the first pattern image and the second pattern image is obtained immediately, and the characteristics of the exposure device are evaluated based on this information. Therefore, the time consumed by the development process is not required, and the transfer image of the pattern formed on the photoreceptor can be prevented from being deformed by the development process. Compared with the conventional case of using a photoresist image, etc., As a result, the characteristics of the exposure device can be evaluated with good accuracy in a short time. At this time, in the process of forming the transfer image of the second pattern, the first transfer pattern of the first pattern is superimposed on at least a part of the second pattern image on the photoreceptor area where the transfer pattern of the first pattern is formed. 2 Pattern transfer 13 200303039 To the aforementioned photoreceptor, the information of the aforementioned positional relationship is information about the overlap error between the aforementioned first pattern and the second pattern. In the second evaluation method of the present invention, the first pattern and the second pattern are formed on the same pattern forming member in a predetermined positional relationship. At this time, the process of forming the transfer image of the second pattern includes: moving the pattern forming member and the photoreceptor relatively from the direction and distance corresponding to the predetermined positional relationship during the transfer of the first pattern. And a process of transferring the second pattern onto the photoreceptor after the relative movement. At this time, the characteristics of the exposure device include the positioning accuracy of at least one of the pattern forming member and the photoreceptor. In the second evaluation method of the present invention, the first pattern and the second pattern are formed on different pattern forming members, respectively. At this time, the characteristics of the exposure device include the positioning accuracy of at least one of the pattern forming member and the photoreceptor. In the second evaluation method of the present invention, the pattern image can be detected by extracting a boundary between an exposed portion and an unexposed portion based on information indicating a change in physical properties of the photoreceptor. In the second evaluation method of the present invention, the relationship between the change in the physical properties and the change in the energy of the energy beam is nonlinear. At this time, the change in the physical properties of the photoreceptor is the same when the number of exposures is one time and when it is plural times. In the second evaluation method of the present invention, the relationship between the change in the physical properties and the change in the energy of the energy beam is linear. 14 200303039 In the second evaluation method of the present invention, the physical properties include at least one of a coloring density, a refractive index of light, a light transmittance, and a light reflectance. At this time, the physical properties include a coloring concentration, and the physical properties are displayed. Information on changes in nature is information on the presence or absence of coloring. In the second evaluation method of the present invention, the pattern image is detected using at least one of transmitted light and reflected light passing through the photoreceptor. In the second evaluation method of the present invention, the detection condition of the pattern image is changed depending on the film thickness of the photoreceptor on the surface of the photoreceptor. In the second evaluation method of the present invention, the information indicating the change in the physical properties is obtained by performing image processing on the photographic data of the photoreceptor. At this time, the foregoing image processing is based on the relationship between the maximum and minimum values of the information in the photographic information, the change in the physical properties of the photoreceptor, and the change in the energy of the energy beam to determine the criticality. The criticality is used to determine the criticality. The video data is converted into 2 frames. In the second evaluation method of the present invention, the pattern image can be detected using diffracted light passing through the photoreceptor. The third evaluation method of the present invention is to evaluate the characteristics of the exposure device. The exposure device transfers the pattern on the first surface to the object arranged on the second surface, and is characterized by including: disposing the photoreceptor on The process of irradiating an energy beam on the photoreceptor without arranging a pattern on the first surface on the second surface. The photoreceptor has a physical property associated with color corresponding to the energy of the irradiated energy beam. 15 200303039 Changes And a process of detecting information indicating changes in the physical properties of the photoreceptor and evaluating the characteristics of the exposure device based on the detection results. According to this method, since the change in the energy of the irradiated energy beam can be obtained based on the information indicating the change in the physical properties of the photoreceptor in relation to color, for example, after the energy beam is irradiated on the photoreceptor, The physical properties of the photoreceptor at a plurality of measurement points set in the area (irradiated area) illuminated by the energy beam on the photoreceptor are immediately measured, and the difference in energy between the measurement points can be detected. Therefore, as compared with the conventional method of measuring the energy at each measurement point by irradiating only the energy beam the same number of times as the number of measurement points, the characteristics of the exposure device can be evaluated in a short time. In addition, since the number of irradiations of the energy beam is only required once, the influence of the energy variation of the light source itself is the same for the measurement results of each measurement point, and the obtained exposure device characteristics are not included in error. In addition, since the sensitivity of the photoreceptor does not depend on the light irradiation angle and is substantially the same in the entire irradiation area, the reliability of the measurement results at the edges of the irradiation area is not reduced. Therefore, compared with the case where a conventional sensor is used, the characteristics of the exposure device can be evaluated with good accuracy. At this time, the characteristics of the exposure device include the illuminance distribution in the energy beam irradiation area. In the third evaluation method of the present invention, the information indicating the change in the physical properties is detected using at least one of reflected light and transmitted light passing through the photoreceptor. 200303039 In the third evaluation method of the present invention, the relationship between the change in the physical properties and the change in the energy of the energy beam is linear. In the third evaluation method of the present invention, the physical properties include at least one of a coloring density, a refractive index of light, a light transmittance, and a light reflectance. The manufacturing method of the exposure device of the present invention includes an adjustment process, and its characteristics The reason is that the aforementioned adjustment process adjusts the characteristics of the exposure apparatus according to the evaluation results of any of the first to third evaluation methods of the present invention. According to this method, the characteristics of the exposure device can be evaluated with good accuracy in accordance with any of the first to third evaluation methods of the present invention. In the adjustment process, the characteristics of the aforementioned exposure device can be adjusted based on the evaluation results. It is possible to manufacture an exposure device with excellent exposure accuracy. [Embodiment] [First Embodiment] Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 1 to 5A. In Fig. 1, an exposure apparatus 100 suitable for implementing the exposure method of the present invention is shown. The exposure apparatus 100 is a projection exposure apparatus of a step & scan method. This exposure device 100 is provided with an illumination system IOP for holding a reticle stage RST as a pattern forming member R, and a reticle stage driving system for driving the reticle stage RST. 29. The image of the pattern formed on the reticle R is projected onto a projection optical system PL on a wafer W as a photoreceptor, and the wafer w is moved to an XY stage on a two-dimensional plane (in the XY plane) for A wafer stage system 22 that drives the χγ stage 20 and a control system that controls the 17 200303039 and the like. This control system is structured around the main control device 28 which is an overall control device. Illumination system IOP is a light source composed of KrF excimer laser or ArF excimer laser, etc., including illumination uniformity optical system (including optical integrator (fly-eye lens, internal reflection integrator, or diffractive optical element) Etc.), and is constituted by illuminating optical systems such as reticle curtains for illumination field diaphragms, relay lens systems and condenser lens systems (none of which are shown). According to the lighting system IOP, the illumination light (hereinafter referred to as "illumination light IL") generated by the light source as exposure light (energy beam) is converted into a light beam with a substantially uniform illumination distribution by the uniform illumination system. The illuminating light IL emitted from the illuminance uniformity optical system passes through the relay lens system to reach the reticle curtain. The light beam passing through the opening of the reticle curtain passes through the relay lens system and the condenser lens system to illuminate the rectangular slit shape on the reticle R held on the reticle stage RST with a uniform illuminance distribution. Illuminated area. The reticle stage RST is arranged below the lighting system IOP in FIG. 1. On this reticle stage RST, a reticle R is sucked and held by a vacuum chuck or the like not shown. The reticle stage RST can be micro-driven in the Y-axis direction (left-right direction of the paper surface in Fig. 1), the X-axis direction (the direction orthogonal to the paper surface in Fig. 1), and the 0-z direction (around the Z-axis orthogonal to the XY plane). Direction), and can be driven at a specified scanning speed in a predetermined scanning direction (here, the Y direction) on the reticle stage RST, which is fixed to reflect the laser interference from the reticle (hereinafter referred to as "" Reticle interferometer ") 21 of the moving mirror 15 of the laser beam, the position of the reticle stage RST in the moving surface is by means of the reticle laser interferometer 21, for example 0. Decomposition ability of 5 ~ lnm degree can be detected at any time. Here, 'actually' a reticle stage RST is provided with a moving mirror having a reflecting surface orthogonal to the Y-axis direction, and a moving mirror having a reflecting surface orthogonal to the X-axis direction 'and corresponds to these The moving mirror is provided with a reticle gamma interference and a reticle X interferometer. However, the moving mirror 15 and the reticle interferometer 21 are representatively shown in FIG. 1. Alternatively, for example, a reticle stage; the end surface of the rST may be mirror-finished to form a reflecting surface (equivalent to the reflecting surface of the moving mirror 15). In addition, it is also possible to use at least one corner-type moving mirror instead of the reflective surface extending in the X-axis direction for position detection of the reticle stage RST in the scanning direction (the Y-axis direction in this embodiment). Here, at least one of the reticle Y interferometer and the reticle X interferometer, for example, the reticle Y interferometer, is a 2-axis interferometer having a 2 measuring axis. According to the measurement of the reticle gamma interferometer, Alas, in addition to measuring the Y position of the reticle stage RST, it can also measure 0 z rotation. The position information of the reticle stage RST from the reticle interferometer 21 is sent to the main control device 28. Based on the k-position information of the reticle stage rSt, the main control device 28 passes the reticle stage drive system 29 to drive the reticle stage RST. The reticle R is, for example, a pattern area formed on the center of a substantially square glass substrate as a photomask substrate. At least two pairs of reticle alignment marks are formed on both sides of the pattern area in the X-axis direction ( Are omitted). The projection optical system PL is arranged below the reticle stage RST in FIG. 1 'so that the direction of the optical axis AXρ is the z-axis direction orthogonal to the χγ plane. As this projection optical system PL, here, a refraction optical system composed of a plurality of lens elements (having a common optical axis A × ρ in the Z-axis direction) 19 200303039 is used as a telecentric reduction system on both sides. In addition, at least one of the plurality of lens elements constituting the projection optical system PL. In this embodiment, there are two or more lens elements, and the controller is corrected with an imaging characteristic (not shown) in accordance with a command from the main control device 28. By controlling it, the imaging characteristics (part of the optical characteristics) of the projection optical system PL can be adjusted, such as magnification, distortion, coma aberration, and image surface curvature. The XY stage 20 is actually composed of a Y stage moved in the Y-axis direction on a base not shown, and an X stage moved in the X-axis direction on the Y stage. These are shown as the XY stage 20. A wafer stage 18 is mounted on the XY stage 20, and the wafer W is held on the wafer stage 18 by a vacuum holder or the like through a wafer holder (not shown). The XY stage 20 can be moved not only in the scanning direction (Y-axis direction), but also in a non-scanning direction (X-axis direction) orthogonal to the scanning direction, so that a plurality of exposure irradiation areas on the wafer W are located in the The projection area within the field of view of the projection optical system PL where the aforementioned illumination area is conjugated. Then, a step scanning operation is performed, that is, an operation of repeatedly scanning and exposing each exposure irradiation area on the wafer W, and an operation of moving to an acceleration start position for performing the next exposure irradiation. The wafer stage 18 is used to micro-drive the wafer holder holding the wafer W in the Z-axis direction and the inclined direction with respect to the XY plane. A moving mirror 24 is provided on the wafer table 18, and a laser interferometer 26 is provided on the reflecting surface facing the moving mirror 24. The laser interferometer 26 projects a laser beam to the moving mirror 24 to receive the laser beam. The reflected light is used to measure the position of the wafer stage 18 in the XY plane. In fact, the moving mirror includes an X-moving 20 having a reflecting surface orthogonal to the X-axis and a γ-moving mirror having a reflecting surface orthogonal to the γ-axis. Corresponding to this, the circular interferometer is also different. An X laser interferometer for position measurement in the X direction and a γ laser interferometer for position measurement in the Y direction are provided. As shown in FIG. 1, the moving mirror 24 and the laser interferometer 26 are representatively shown. In addition, for example, the end surface of the wafer stage 18 may be mirror-finished to form a reflecting surface (equivalent to the reflecting surface of the moving mirror 24). In addition, X laser interferometers and γ laser interferometers are multi-axis interferometers with a plurality of length-measuring axes. In addition to the χ and γ positions of the wafer table 18, rotation (longitudinal swing (around the Z axis) can also be measured. Rotation of 0 ζ rotation)), roll (0 X rotation around the X axis), roiling (0 y rotation around the γ axis). Therefore, in the following description, it is assumed that the laser interferometer 26 is used to measure the positions of the wafer stage 18 in the five degrees of freedom, such as X, γ, 0 z, 0 X, and 0 y. In addition, a coordinate system (X, γ) composed of the X coordinate and the γ coordinate measured in this manner is hereinafter referred to as a "platform coordinate system". In addition, it is also possible to tilt the multi-axis interferometer 45. The laser beam is irradiated to the reflecting surface provided on the stage (not shown) on which the projection optical system is mounted through the reflecting surface provided on the wafer stage 18 to detect the optical axis direction (Z-axis) of the projection optical system PL Direction). The measurement of the laser interferometer 26 is supplied to the main control device 28. The main control device 28 continuously monitors the measurement of the laser interferometer 26 and drives the XY stage 20 through the wafer stage driving system 22 to perform crystallography. Position control of round table 18. The Z-axis position and inclination of the wafer W surface are, for example, using a light transmission system disclosed in Japanese Patent Laid-Open No. 6-283403 and corresponding US Patent No. 5,438,332, and the like, and Receiving system 21 200303039 The oblique incidence method of multi-point focus position detection system constitutes a focus sensor (none of which is shown) to measure. The measurement sensor of the focus sensor is also supplied to the main control device 28. According to the measurement of the focus sensor, the main control device 28 moves the wafer stage 18 in the Z-axis direction through the wafer stage driving system 22 to The position and tilt of the wafer W in the optical axis direction of the projection optical system PL are controlled. In this case, the above-mentioned publication and the disclosure of the corresponding U.S. patent are used as part of the description in this specification. On the wafer stage 18, a reference plate FP is fixed so that its surface has the same height as the surface of the wafer W. Various reference marks are formed on the surface of this reference plate FP, and the reference marks used for reference line measurement of the alignment detection system AS described later are included. Off-ax1S alignment detection system AS is installed on the side of the lens barrel of the projection optical system PL. As this alignment detection system AS, an off-axis alignment sensor using Field Image Alignment (FIA: Field Image Alignment) is used. This sensor uses wide-band light generated by light sources such as halogen lamps. Illumination and image processing are performed on the image data of the alignment mark (or the reference mark on the reference plate FP) on the wafer captured by the CCD camera to measure the mark position. The alignment control device 16 not only A / D converts the information from the alignment detection system AS, but also detects the position of the mark with reference to the measurement frame of the laser interferometer 26. This detection result is supplied from the alignment control device 16 to the main control device 28. Furthermore, although the exposure apparatus 100 according to this embodiment is not shown, for example, above the reticle R, there are provided, for example, Japanese Patent Laid-Open No. 7-176468 22 200303039 and corresponding US Patent No. 5646413. The disclosed alignment system consists of a TTR (Through The Reticle) alignment system using light with an exposure wavelength, which is used to simultaneously detect the reticle on the reticle R through the projection optical system PL. Mark, or the reference mark on the reticle stage RST and the mark on the reference plate FP. The detection signals of these reticle alignment systems are supplied to the main control device 28 through the alignment control device 16. In this case, the above publication and the disclosure of the corresponding U.S. patent are incorporated as part of the description in this specification. The main control device 28 includes a CPU (Central Processing Unit), a memory (ROM, RAM), and a microcomputer (or workstation) composed of various interfaces and the like. For example, the overall control of the reticle R and the wafer W is controlled. Synchronous scanning, stepping operation of wafer W, exposure timing, etc., to perform the exposure operation reliably. In addition, the main control device 28 is connected to the memory device 27, and can store and read various data to and from the memory device 27. Next, the measurement pattern PU arranged in the pattern region of the reticle R in the first embodiment will be described. The measurement pattern PU is, for example, as shown in FIG. 2, a line and gap (line & space, hereinafter, cyclically arranged by three line patterns) having a predetermined line width and extending in the X-axis direction. (Referred to as "L / S") pattern. There are no restrictions on the conditions (period, duty cycle, and number) of L / S patterns. In addition, in the first embodiment, the pattern portion (three line patterns) on the reticle R is provided as a light shielding portion. In this embodiment, the illumination area on the reticle R illuminated by the illumination light IL is an elongated rectangle extending in the X-axis direction with the optical axis A × ρ as the center in the field of view of the projection optical system PL. The reticle is at 23 200303039 The measurement pattern PU is formed at five positions in the pattern region on the sheet R, so that when the reticle R is positioned so that the optical axis Axρ of the projection optical system PL coincides with the center, for example, the center and four corners in the illumination region The measurement patterns PU are arranged separately. In addition, the measurement operation of the optimal focus position described later uses only one measurement pattern arranged in the center of the illumination area, and is masked by a reticle when transferring, so that the illumination light IL is not irradiated on the remaining four Measurement pattern. In addition, as shown in FIG. 2, the wafer W is coated with a photosensitive agent having a constant coloring density (= C1) when the cumulative exposure amount (energy) per unit area is equal to or greater than a predetermined threshold. That is, the change in the color density and the change in the cumulative exposure amount are non-linear. In the first embodiment, the cumulative exposure amount per unit area of the exposure portion on the wafer W once is set to El (> predetermined threshold value). In FIG. 2B, the cumulative exposure amount E2 is a cumulative exposure amount which is twice the cumulative exposure amount E1. In addition, in the following description, for convenience, the so-called "cumulative exposure amount" means "the cumulative exposure amount per unit area j °." Next, using the flowchart of Fig. 3, the use of the exposure device configured as described above will be described. 100, while changing the focus position of the wafer W 1 to M, for example, 13), transfer the measurement pattern PU to each of a plurality of imaginary rectangular regions set on the wafer W as target regions to obtain projection optics The flow of the operation of the optimal focus position of the system PL. The flowchart of FIG. 3 corresponds to a series of processing operations performed by the CPU of the main control device 28. Step 401 of FIG. 3 uses a reticle not shown. The feeder mounts 24 200303039 pieces on the reticle stage RST. Step 405, for example, using the aforementioned reticle alignment system, through the projection optical system PL, to detect at least one reticle pair The quasi mark and the relative position of at least one pair of reference marks formed on the surface of the reference plate FP corresponding to this. Then, the reticle is obtained from the measurement marks of the reticle interferometer 21 and the laser interferometer 26 at this time. sheet The relationship between the reticle stage coordinate system specified by the long axis of the instrument 21 and the wafer stage coordinate system specified by the long axis of the laser interferometer 26. That is, the reticle is performed in this manner. In addition, by aligning the reticle, the reticle R is positioned so that its center is aligned with the optical axis Axρ of the projection optical system PL, and a measurement pattern PU is set at the center of the aforementioned illumination area. Step 407 The initialization of the focus position target 値 is performed. That is, the initial position 1 ^ 1 ”is set at the counter i to set the focus position target 値 Z1 of the wafer WT to ζα. < -ι). In this embodiment, in addition to the setting of the focus position target 値 of the wafer W, the counter i is also used to set the movement target position of the wafer W during exposure. In addition, in this embodiment, for example, the focus position of the projection optical system PL is known as the center of the design (design, etc.), and the focus position of the wafer W is changed from Zi to Z / ZfZi on a scale of ΛZ. 'ZM). At this time, since i = 1, the original target area is the exposure target area. In step 409, while monitoring the measurement from a focus sensor (not shown), the wafer stage 18 is micro-driven in the Z-axis direction, so that the focus position of the wafer W and the target 値 Zj (at this time, ZD-caused Step 411 is to monitor the measurement result of the laser interferometer 26 while monitoring the laser interferometer 26. 200303039 The wafer stage driving system 22 is used to move the XY stage 20 to move the wafer W to a position below the projection optical system PL. At this time , Refer to the counter i to move the XY stage 20 so that the ith (the first) target area becomes the exposure target area. Step 413, the exposure is performed in this state. Here, the purpose is to measure the wafer The optimal focus position of W, therefore, during the exposure, the reticle R and the wafer W, that is, the reticle stage RST and the XY stage 20 are stationary. Accordingly, the measurement is performed by the projection optical system PL. The pattern PU is transferred to the exposure target area on the wafer. In the first embodiment, since the cumulative exposure amount of the exposure portion on the wafer W is set to E1, as shown in FIG. The exposed area is colored by the photosensitizer in the exposed area. Density C1 (shown in slanted lines in Figure 4A). Step 415 of Figure 3 refers to the set focus position target 値 (counter i) to determine whether the transfer has been performed at all the predetermined M focus positions. Here, since the transfer of the initial target frame is completed only, the determination in step 415 is negative, and the process moves to step 417. Step 417 is performed by incrementing the counter i by 1 (i — i + 1). Add ΔZ to the target 値 at the focus position and make the next target area the exposure target area, and then return to step 409. Hereinafter, until the determination in step 415 is affirmative, repeat step 409-411- ^ 413- ^ 415-417 processing and judgment. In step 415, when the target 値 of the set focus position becomes ZM (that is, when the i of the counter i becomes M), the judgment in step 415 is affirmative, and shifts. Go to step 421. 26 200303039 Step 421 is to set the counter k representing the focus position and the corresponding exposed area number to 1, and set the area (exposure irradiation area) exposed at the initial focus position Zi as the measurement target area. 423, by monitoring the measurement of the laser interferometer 26, and controlling the XY stage 20 through the wafer stage driving system 22, the measurement target area on the wafer W moved to the wafer W can be aligned and detected The position detected by the system AS. Then, the measurement target area (the part where the latent image of the measurement pattern PU is formed) on the wafer W is captured using the alignment detection system AS, and the image data is captured. For example, in the photographic data When each pixel is digitized in 8 bits, it is captured at a density of 28 = 256 tones. That is, the photographic data is displayed in the range of 0 to 255. Next, find the maximum and minimum values of the data frames in the captured photographic data. For example, take the intermediate frame as the critical frame and add 2 to it. Here, it is converted to "1" when the data frame is larger than the critical value, and converted to "0" when the data frame is not reached. Therefore, "no coloration" (that is, the unexposed portion) corresponds to "1", and "colored" (that is, the exposed portion) corresponds to "0". Then, as shown in FIG. 4, a scanning line L1 extending through the center of the measurement target area and extending in the Y-axis direction is set, and the photographic data on the scanning line L1 is extracted based on the image data that has been converted into two. Further, based on the extracted photographic data, the boundary between the exposed portion and the unexposed portion is obtained. As shown in FIG. 4C, in the periodic direction of the L / S pattern, the line width 中央 LW of the central line pattern is measured. Here, the reason why the central line pattern is used as the measurement object is to remove the influence of coma aberration. Step 425 refers to the counter k to determine whether the line width measurement has been performed in all the exposure areas (measurement target areas). Here, since k = 1, that is, the measurement of the line width 针对 is performed only for the first exposure irradiation area, the determination in step 425 is negative, and the process moves to step 427. In step 427, the counter k is incremented by 1 (+1). After the next exposure irradiation area is the measurement target area, the process returns to step 423. Hereinafter, until the judgment of step 425 is affirmative, the processing and judgment of steps 423-425-427 are repeatedly performed. After the measurement of the line width 値 of all the exposure irradiation areas is completed, the k of the counter k becomes M, the determination in step 425 is affirmative, and the process moves to step 429. Step 429 is based on the measured line width 値 and the focal position of the wafer W at this time, for example, as shown in FIG. 5A, a statistical operation is used to obtain an approximate 値 between the displayed line width 値 and the focus position. Then, the optimal focus position is judged from the approximate 値 pole, and the obtained optimal focus position is stored in the billion-memory device 27, and displayed on a display device (not shown), and the process ends. As described above, according to the first embodiment, the “exposed part” and the “unexposed part” can be distinguished based on the information (specifically, information on the presence or absence of coloration) of the coloring density change of the display photosensitizer. After the measurement pattern PU is transferred to the wafer W, the line width 各 of each pattern transfer image can be directly measured without developing the wafer W. Therefore, the error factors such as the deformation of the wafer W caused by the development process can be removed, and compared with the conventional case of using a photoresist image, the optimal focus position can be found with good accuracy. In this case, since the line width measurement is performed after development processing, etc., it takes about 4 to 6 minutes to calculate the line width measurement after exposure to 28 200303039 (for example, heating 1 ~ 2 minutes, cooling for 1 minute, developing for 1 to 2 minutes, and drying for 1 minute). However, according to the first embodiment, since the line width measurement can be performed immediately after exposure, no time for development processing or the like is required, and productivity can be greatly improved. In addition, in this embodiment, the optimal focus position in a lighting area, that is, a predetermined point (centered in this embodiment) in a projection area where the projection optical system PL and the lighting area are conjugated, is obtained. However, it is also possible to find the depth of focus (DOF) to replace it or use it. In addition, the measurement point of the optimal focus position within the field of view (projection area) of the projection optical system PL may also be a point outside its center or a plurality of points. In addition, in the same manner as the first embodiment, aberrations such as curvature of field, coma aberration, spherical aberration, astigmatism, and the like can be evaluated as the optical characteristics of the projection optical system PL. For example, at positions corresponding to a plurality of measurement points in the field of view of the projection optical system PL (especially the aforementioned projection area), measurement patterns PU are respectively arranged, and the optimal focus position of each measurement point is obtained in the same manner as described above. Then, based on the measurement results, for example, the curvature of the image plane can be obtained by the least square method. At this time, the measurement pattern PU may be sequentially positioned at a position corresponding to each measurement point, or a reticle in which a plurality of measurement patterns PU are formed may be used for a plurality of measurement points. When measuring the coma aberration, the measurement pattern is, for example, an L / S pattern having five (or two) line patterns transferred to a wafer W through a projection optical system PL. Then, the line widths L1, L5 of the line patterns at both ends are measured respectively according to the presence or absence of the coloring of the photosensitizer, and from this measurement result, for example, the line width anomaly 値 represented by 29 200303039 following formula (1) is calculated to obtain the coma. Aberration. Abnormal line width 値 = (L1 · L5) / (L1 + L5) ”· (1) When measuring spherical aberration, use L / S patterns of plural types with different duty ratios as the measurement patterns, which are respectively used in the respective spaces. The measurement of the optimal focus position is performed as described above. Then, the spherical aberration is obtained from the difference between the optimal focus positions. The measurement of astigmatism uses two periodic patterns whose orthogonal directions are orthogonal to each other for measurement. For the pattern, the above-mentioned optimal focus position measurement is performed for each periodic pattern. Then, astigmatism is obtained based on the difference between the two. Moreover, although the first embodiment is described above, the pattern portion on the reticle R is The case of the light-shielding portion has been described, but it may be a light-transmitting portion. This is because the "exposed portion" and the "unexposed portion" can be distinguished according to the presence or absence of coloring information in any case. In addition, in the first embodiment described above, although the optimal focus position is determined based on the correlation between the line width 値 of the transferred image and the focus position of the wafer W, it is not limited to this. For example, The correlation between the contrast of the transferred image and the focus position of the wafer W is used to determine the optimal focus position. This is because by processing the photographic data, the contrast of the images can be obtained. Moreover, in the first embodiment described above, although one scanning line L1 is set, and the line width 根据 is obtained from the photographic data on the scanning line L1, it is not limited to this. For example, a plurality of scanning lines may be set, and Find the average line width 出于 of each scan line. In the above-mentioned first embodiment, although the photosensitizer whose relationship between the cumulative exposure change 200303039 and the color density change is non-linear, it is not limited to this, and the relationship between the cumulative exposure change and the color density change described later can also be used. It is a linear sensitizer. This is because, in this case, it is also possible to distinguish between "exposed part" and "unexposed" based on the presence or absence of coloring information (the same is used to convert the photographic data (image data) using the established threshold value). Ministry ". In the first embodiment described above, although the measurement pattern PU is an L / S pattern in which three line patterns are periodically arranged, it is not limited to this. Moreover, the difference in coloring density can also be used to detect the wedge-shaped mark used in the aforementioned SMP focus measurement method. For example, the relationship between the change in cumulative exposure and the change in color density is non-linear. As shown in FIG. 5B, a photosensitizer with no coloration when the cumulative exposure is E3 and a color density C2 when the cumulative exposure is E4 is coated on the wafer W It is assumed that the cumulative exposure amount of the exposure part on the wafer W for one exposure is E3. At this time, for example, a first line pattern extending in the first direction is transferred to the wafer W, and a second line pattern extending in a second direction different from the first direction is superimposed on the transfer area and transferred. At this time, for example, as shown in FIG. 5C, a transfer image LP1 of the first line pattern and a transfer image LP2 of the second line pattern are partially formed on the wafer W. Here, since the cumulative exposure amount of the single exposure portion is E3, the photosensitizer is not colored, but as shown in FIG. 5C, the portion where the two line patterns overlap is the double exposure portion, and the cumulative exposure amount is E4. This part of the photosensitizer will be colored to a color density C2. That is, it is possible to detect the wedge-shaped mark without developing the wafer W. Next, in the same manner as the conventional SMP focus measurement method, wedge marks are formed on the wafer at a plurality of positions. For example, using an alignment detection system AS, the length of the wedge mark image 31 200303039 is measured in the side direction. Then, the vicinity of the maximum curve showing the approximate relationship between the focus position and the length of the wedge-shaped marker image is cut at a predetermined cutting level, and the midpoint of the obtained focus position range is judged as the optimal focus position. In this case, since the wedge-shaped mark image length can be measured immediately after the superimposed transfer, it is possible to prevent deformation of the wafer w caused by the development process and the like, and to change the shape of the tip end portion of the wedge-shaped mark due to process influence. Therefore, compared with the conventional case where a photoresist image is used, an optimal focus position can be obtained with good accuracy. In addition, the synchronization accuracy of the reticle stage RST and the XY stage 20 can also be evaluated. For example, on the reticle R, a plurality of patterns having a predetermined line width are arranged in the scanning direction, and the reticle stage RST and the XY stage 20 are simultaneously controlled to scan relative to each other, and each pattern is transferred to the crystal. Circle w. That is, ‘scan exposure. Then, the line width 各 of each pattern transfer image formed on the wafer W is measured according to the presence or absence of coloring of the photosensitizer, and the synchronization accuracy of the two stages is evaluated based on the measurement results. That is, if each line width 値 is approximately constant, it means that the synchronization accuracy is good. On the other hand, if the distribution of each line width 大 is large, the synchronization accuracy is not good. Furthermore, as the optical characteristics of the projection optical system PL, projection magnification and distortion (distC) rtion can also be measured. In this case, it is not necessary to change the position of the Z-axis direction of the wafer to perform multiple exposures. In the illuminated area illuminated by the illumination light, the measurement patterns PU are respectively arranged at positions corresponding to the plurality of measurement points in the aforementioned projection area to perform The exposure of the wafer is sufficient. In the above-mentioned embodiment, the reticle and the wafer are in a stationary state during the transfer of the measurement pattern PU. However, the measurement pattern PU may be transferred by scanning exposure. Based on this, dynamic deformation can be measured. << Second Embodiment >> Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 6A to 8B. The second embodiment will be described by taking the following case as an example, that is, using the aforementioned exposure apparatus 100, The measurement pattern is superimposed and transferred onto the wafer to evaluate the positioning accuracy (stepping accuracy) of the XY stage 20. First, a measurement pattern PB formed on the reticle R used in the second embodiment will be described. As an example, the measurement pattern PB is composed of a first pattern PM1 and a second pattern PM2, as shown in FIG. 6A. Further, the structure of the first pattern PM1 includes a rectangular pattern and two line patterns each covering the rectangular pattern and disposed on both sides of the Y-axis direction, and the structure of the second pattern PM2 is included in Y Two rectangular patterns spaced apart in the axial direction, and a three-line pattern surrounded by these rectangular patterns. The size of the first pattern PM1 region and the second pattern PM2 region are the same, and the length of each region in the Y-axis direction is YR. In the second embodiment, the second pattern PM2 is arranged on the right side (+ Y side) of the drawing in FIG. 6A of the first pattern PM1. In the second embodiment, the pattern portion (rectangular pattern and line pattern) on the reticle R is provided as a light-shielding portion. In the present embodiment, although the first pattern PM1 and the second pattern PM2 are formed adjacent to each other in the Y-axis direction, the first pattern PM1 and the second pattern PM2 may be formed at a predetermined distance in the Y-axis direction. In addition, as in the first embodiment, the wafer W is coated with a photosensitizer having a constant coloring density (see FIG. 2B) 33 200303039 when the cumulative exposure of the sensor is greater than a predetermined threshold. The cumulative exposure amount of the exposed portion on the wafer W for one exposure is set to El (> predetermined threshold value). Fig. 7 is a flowchart corresponding to a series of processing operations performed by the CPU of the main control device 28. Hereinafter, this second embodiment will be described using this flowchart. Steps 501 to 505 in Fig. 7 are the same as those in steps 401 to 405 in the first embodiment. In step 507, N imaginary rectangular regions are set as target regions on the wafer W for transferring the measurement pattern PB. Then, the counter i indicating the target area setting number is set to 1, and the first target area is set as the exposure target area. In step 509, the XY stage 20 is moved through the wafer stage driving system 22 while monitoring the measurement result of the laser interferometer 26, so that the wafer W is moved to a position below the projection optical system PL. Then, the XY stage 20 is moved so that the position of the wafer W becomes a position for exposing an exposure target area on the wafer W. In step 511, the first exposure is performed in this state. Here, since the purpose is to measure the positioning accuracy of the XY stage 20, during the exposure, the reticle R and the wafer W, that is, the reticle stage RST and the XY stage 20 are stationary. Accordingly, the measurement pattern PB is transferred to the exposure target region on the wafer through the projection optical system PL. In the second embodiment, since the cumulative exposure amount of the exposure portion on the wafer W is set to E1, as shown in FIG. 6B, in the exposure target area on the wafer, the photosensitive agent in the exposure portion is colored to be colored. Concentration C1 (shown by oblique lines in FIG. 6B). 34 200303039 In step 513 of FIG. 7, in order to superimpose and transfer the image of the second pattern PM2 to the exposure target area on the wafer W on which the transferred image of the first pattern PM1 is formed, the XY stage 20 is positioned in the Y-axis direction. Move the distance YW obtained by the following formula (2). YW = YR · β-. (2) Here, / 5 is the projection magnification of the projection optical system PL. In step 515, the second exposure is performed in this state. According to this, as shown in FIG. 6C, in the area where the exposure target area on the wafer W is shifted by the distance YW in the Y-axis direction (hereinafter, referred to as "shift area" for convenience), it is rotated through the projection optical system PL. The measurement pattern PB is printed. Since the cumulative exposure amount of the exposed portion on the wafer W is set to E1, the photosensitive area of the newly exposed portion (the first exposure portion) in the shifted area on the wafer W is colored to the color density C1. In addition, although the cumulative exposure amount of the second exposure portion (second exposure portion) is E2, the relationship between the change in color density and the cumulative exposure amount is non-linear (see FIG. 2), so the photosensitizer in the second exposure portion is still It is the coloring density C1. In addition, in Fig. 6C, the exposure target area is indicated by a broken line, and the shift area is indicated by a solid line. In addition, an area where the exposure target area and the shift area on the wafer W overlap is hereinafter referred to as "overlap area" for convenience. Here, in the overlapping area, an L / S pattern including the following pattern is formed, that is, the L / S pattern includes a line pattern image of 2 lines and a total of 4 lines at each of the two ends of the first pattern transfer image, and the second line pattern image. The 7 line pattern images formed by the 3 line pattern images in the center of the pattern transfer image. This L / S pattern image is designed to be an L / S pattern image with a certain pitch to become 50% of the duty cycle. Step 517 in FIG. 7 refers to the counter i to determine whether the measurement pattern PB has been transferred to all the target areas of 35 200303039. Here, since i 2 1, that is, only the original target is transferred, the determination in step 517 is negative, and the process proceeds to step 519. In step 519, the counter k is incremented by 1 (+1). After the next exposure area is the measurement target area, the process returns to step 509. Hereinafter, until the judgment of step 517 is affirmative, the processing and judgment of steps 509 to 519 are repeatedly performed. After the transfer of the measurement pattern PB for all the exposure-irradiated areas is completed, the number of the counter i becomes N, the determination in step 517 is affirmative, and the process proceeds to step 521. Step 521 is to control the XY stage 22 through the wafer stage driving system 22 while monitoring the measurement of the laser interferometer 26, and move the wafer W to the measurement target area (overlapping area) on the wafer W. A position that can be detected by the alignment detection system AS. Then, the measurement target area on the wafer W is photographed using the alignment detection system AS to obtain photographic data. Further, in the same manner as in the first embodiment described above, the data in the photographic data is stored in each pixel to be converted into "1" and "0". Therefore, "no coloring" (that is, the unexposed portion) corresponds to "1", and "with coloring" (that is, the exposed portion) corresponds to "0". Then, as shown in FIG. 8A, a scanning line L2 that extends through the center of the measurement target area and extends in the Y-axis direction is set, and the photographic data on the scanning line L2 is extracted based on the 2 digitized photographic data. Further, based on the extracted photographic data, the boundary between the exposed portion and the unexposed portion is obtained. As shown in FIG. 8B, the line pattern image formed by the first transfer and the line pattern formed by the second transfer are measured. The distance DW1, DW2 in the direction of the Y axis 36 200303039. Then, the position shift amount DW is obtained using the following formula (3). DW = DW1 · DW2 (3) Step 525 in Fig. 7 refers to the counter m to determine whether the position offsets in all overlapping areas have been calculated. Here, because m = 1 'that is, the position offset is calculated only in the initial overlap region', the judgment in step 525 is negative, and the process moves to step 527 ° and step 527, which is to increase the counter m 値 ( + 丨), after the next overlapping area is the measurement target area, return to step 523. Hereinafter, until the judgment in step 525 is affirmative, the processes and judgments in steps 523-525- > 527 are repeated. After the calculation of the positional offsets of all the overlapping regions on the wafer W is completed, the value of the counter m becomes N, and the determination in step 525 is affirmative ', and the process proceeds to step 529. Step 529 is to perform statistical processing (for example, averaging) on the position offsets DW obtained in all the overlapping regions to obtain the positioning accuracy of the XY stage 20. Then, the obtained positioning accuracy is stored in the memory device 27, and it is displayed on a display device not shown in the figure, and the process ends.
如以上之說明，根據本第2實施形態，由於能根據顯 示感光劑著色濃度變化之資訊，具體而言，係根據有無著 色之資訊，來區別「曝光部」與「未曝光部」，因此，在 將測量用圖案PB重疊轉印至晶圓W上後，能不對晶圓W 進行顯影處理，而直接測量圖案之偏移量。因此，無顯影 處理等所需之時間，且能除去因顯影處理所引起之晶圓W 37 200303039 之變形等誤差因素，與習知利用光阻像等之情形相較，能 在短時間內以良好之精度求出XY載台20之定位精度。 又，上述第2實施形態中，雖係求出Y軸方向之定位 精度，但亦可以同樣方式求出X軸方向之定位精度。例如 ，使用將測量用圖案PB繞Z軸旋轉90度之形狀的圖案作 爲測量用圖案，於第2次曝光時（圖7之步驟513)，不於Y 軸方向而係於X軸方向使XY載台20移動距離YW，即能 以和上述同樣之方式測量X軸方向之位置偏移量。 又，上述第2實施形態中，係設定1條掃描線L2，根 據該掃描線L2上之攝影資料求出位置偏移量，但並不限於 此，例如，亦可設定複數條掃描線，來求出於各掃描線所 得之位置偏移量的平均値。 再者，亦能求出投影光學系統PL之光學特性之一的變 形。例如，使用形成有ΙΟΟμιη方形之內箱型標記與200μιη 方形之外箱型標記的標線片R，將其中一方標記分別配置 在照明區域內複數點之狀態下透過投影光學系統PL轉印至 晶圓W上後，將另一方標記配置在照區域中心，且一邊移 動ΧΥ載台20，一邊將另一方標記透過投影光學系統PL重 疊轉印在晶圓W上之前述一方標記之各個上。若投影光學 系統PL之投影倍率例如爲1/5倍時，晶圓W上，即形成 在40μιη方形之箱型標記內側配置20μιη方形之箱型標記的 雙箱型（box in box)標記之像。然後，根據感光劑著色濃度 之變化，藉由測量兩標記之位置關係與偏離載台座標系統 之基準點之偏移量，來求出投影光學系統PL之變形。 38 200303039 又，上述第2實施形態中，雖係求出XY載台20之定 位精度，但亦可求出標線片載台RST之定位精度。此時， 例如於第2次曝光時（圖7之步驟513)，取代使ΧΥ載台20 向Υ軸方向移動距離YW，不移動ΧΥ載台20，而使標線 片載台RST於Υ軸方向移動距離YR即可。據此，圖7之 步驟529中所求出之定位精度，即爲標線片載台RST於Υ 軸方向之定位精度。 又，上述第2實施形態中，雖係針對將標線片R上形 成之第1圖案ΡΜ1與第2圖案ΡΜ2重疊轉印至晶圓W上 之情形作了說明，但並不限於此，將第2圖案轉印至離開 晶圓W上第1圖案ΡΜ1之轉印像的位置亦可。此時，若已 知第1圖案之轉印像與第2圖案之轉印像之設計上的位置 關係的話，例如，根據第1圖案之轉印像與第2圖案之轉 印像的檢測結果，根據該位置關係之檢測結果、及與此對 應之設計上之位置關係，即能求出兩者間之誤差（關於第1 圖案像與第2圖案像之位置關係的資訊）。根據此誤差，能 與上述實施形態同樣的，求出曝光裝置之特性，例如，求 出標線片載台RST及ΧΥ載台20之至少一方的定位精度。 此時，可以既定之位置關係將第1圖案與第2圖案形成在 同一標線片上，以和前述相同之順序，來求出標線片載台 RST及ΧΥ載台20之任一者之定位精度，或兩者之定位精 度，或將第1圖案與第2圖案分別形成在不同的標線片上 ，分別使用各圖案進行曝光，在晶圓W上以既定之位置關 係形成第1圖與第2圖案之轉印像，以和前述相同之順序 39 200303039 ’來求出標線片載台RST及XY載台20之任一者之定位精 度’或兩者之定位精度亦可。若爲後者時，就縮短標線片 之交換時間來看，例如日本專利特開平10-209039號公報及 與此對應之美國專利第6327022號等，所揭示之使用能搭 載2片標線片之雙標線片夾持方式之標線片載台較佳。又 ’本案援用上述公報及對應美國專利之揭示作爲本說明書 記載的一部份。 除此之外，在標線片R上僅形成1個圖案，將該圖案 轉印至晶圓上後，移動標線片載台RST或晶圓載台WST， 再度將圖案轉印至晶圓W上而在晶圓W上形成2個圖一圖 案之轉印像亦可。此時，亦能根據該2個轉印像之檢測結 果與標線片載台RST或晶圓載台WST之移動距離，以簡單 之計算，求出標線片載台RST及ΧΥ載台20之任一者之定 位精度，或兩者之定位精度。 又，上述第2實施形態中，雖係針對塗有累積曝光量 變化與著色濃度變化爲非線性之感光劑的情形作了說明， 但並不限於此，例如，如圖9Α所示，塗有著色濃度與累積 曝光量成比例變化，亦即，塗有累積曝光量變化與著色濃 度變化爲線性關係之感光劑亦可。此處，係將感光劑之厚 度調整爲，當累積曝光量爲Ε1時著色濃度爲C3，當累積 曝光量爲Ε2時著色濃度爲C4(>C3)。 此處，作爲累積曝光量變化與著色濃度變化爲線性關 係之感光劑，例如，可使用含有聚苯乙烯衍生物樹脂、光 酸產生劑、顯色劑、丙二醇單甲醚乙酸酯（PGMEA)及丙二 200303039 醇單甲醚（PGME)之混合物。舉一例而言，含有10〜20%之 聚苯乙烯衍生物樹脂、0.4〜1.0%之光酸產生劑、0.2〜0.6% 之顯色劑，PGMEA及PGME分別調整在45〜55%及30〜 40%範圍的混合物，具有與習知光阻大致相等之操作性。 此時，如圖9B所示，將在重疊區域之掃描線L2’上的 攝影資料加以抽出的話，例如，如圖9C所示，於2次曝光 部爲La、於1次曝光部爲Lb(>La)、於未曝光部則爲Lc( > Lb)。因此，例如根據下式（4)，求出用以進行2値化之臨 界値Ls。As described above, according to the second embodiment, the “exposed portion” and the “unexposed portion” can be distinguished based on the information on the change in the coloring density of the display photosensitizer, and specifically based on the presence or absence of coloring information. After the measurement pattern PB is superimposed and transferred onto the wafer W, the pattern W can be directly measured without performing development processing on the wafer W. Therefore, there is no time required for the development process, etc., and the error factors such as the distortion of the wafer W 37 200303039 caused by the development process can be removed. Compared with the case where the photoresist image is used conventionally, it can be used in a short time. With good accuracy, the positioning accuracy of the XY stage 20 was obtained. In the second embodiment described above, although the positioning accuracy in the Y-axis direction is obtained, the positioning accuracy in the X-axis direction can be obtained in the same manner. For example, when a pattern in which the measurement pattern PB is rotated 90 degrees around the Z axis is used as the measurement pattern, at the second exposure (step 513 in FIG. 7), the measurement is performed in the X axis direction instead of the Y axis direction. The moving distance YW of the stage 20 enables the position shift amount in the X-axis direction to be measured in the same manner as described above. In the second embodiment described above, one scanning line L2 is set, and the position shift amount is obtained based on the photographic data on the scanning line L2, but it is not limited to this. For example, a plurality of scanning lines may be set. Find the average 値 of the position shifts obtained for each scan line. Furthermore, one of the optical characteristics of the projection optical system PL can be determined. For example, using a reticle R in which a 100 μm square inner box mark and a 200 μm outer box mark are formed, one of the marks is arranged in a plurality of points in the illumination area and transferred to the crystal through the projection optical system PL. After the circle W, the other mark is arranged at the center of the illumination area, and the X mark stage 20 is moved, and the other mark is transferred and superimposed on each of the one mark on the wafer W through the projection optical system PL. If the projection magnification of the projection optical system PL is, for example, 1/5 times, the wafer W is formed on the wafer W with a double box type mark (box in box) mark arranged inside a 40 μm square box mark. . Then, the deformation of the projection optical system PL is obtained by measuring the positional relationship between the two marks and the amount of deviation from the reference point of the stage coordinate system according to the change in the coloring density of the photosensitizer. 38 200303039 In the second embodiment described above, although the positioning accuracy of the XY stage 20 is obtained, the positioning accuracy of the reticle stage RST can also be obtained. At this time, for example, at the time of the second exposure (step 513 in FIG. 7), instead of moving the XY stage 20 to the Y axis direction by a distance YW, the XY stage 20 is not moved, and the reticle stage RST is on the Y axis. You can move in the direction YR. Accordingly, the positioning accuracy obtained in step 529 of FIG. 7 is the positioning accuracy of the reticle stage RST in the direction of the y-axis. In the second embodiment described above, the case where the first pattern PM1 and the second pattern PM2 formed on the reticle R are superimposed and transferred onto the wafer W has been described, but it is not limited to this. The second pattern may be transferred to a position away from the transfer image of the first pattern PM1 on the wafer W. At this time, if the design positional relationship between the transfer image of the first pattern and the transfer image of the second pattern is known, for example, based on the detection results of the transfer image of the first pattern and the transfer image of the second pattern Based on the detection result of the positional relationship and the corresponding positional relationship on the design, the error between the two can be obtained (information about the positional relationship between the first pattern image and the second pattern image). Based on this error, the characteristics of the exposure device can be determined in the same manner as in the above-mentioned embodiment. For example, the positioning accuracy of at least one of the reticle stage RST and the XY stage 20 can be determined. At this time, the first pattern and the second pattern can be formed on the same reticle with a predetermined positional relationship, and the positioning of any of the reticle stage RST and the XY stage 20 can be obtained in the same order as described above. Accuracy, or the positioning accuracy of the two, or the first pattern and the second pattern are respectively formed on different reticles, and each pattern is used for exposure, and the first and second patterns are formed on the wafer W in a predetermined positional relationship. The transfer pattern of the 2 patterns may be determined in the same order as the above 39 200303039 'to determine the positioning accuracy of either the reticle stage RST and the XY stage 20' or both. In the latter case, in terms of shortening the exchange time of the reticle, for example, Japanese Patent Laid-Open No. 10-209039 and the corresponding U.S. Patent No. 6,327,022, etc., the disclosed use can be carried by two reticle A reticle stage with a dual reticle clamping method is preferred. Also, 'the case cited the above-mentioned bulletin and the disclosure of the corresponding U.S. patent as part of the description in this specification. In addition, only one pattern is formed on the reticle R. After transferring the pattern to the wafer, the reticle stage RST or the wafer stage WST is moved, and the pattern is transferred to the wafer W again. It is also possible to form two transfer images of one pattern and one pattern on the wafer W from above. At this time, based on the detection results of the two transfer images and the moving distance of the reticle stage RST or the wafer stage WST, a simple calculation can be used to find the distance between the reticle stage RST and the XY stage 20 Either the positioning accuracy, or both. In addition, in the second embodiment described above, the case where a photosensitive agent having a non-linear change in cumulative exposure amount and color density change has been described, but it is not limited thereto. For example, as shown in FIG. 9A, the coating has The color density changes in proportion to the cumulative exposure, that is, a photosensitizer with a linear relationship between the cumulative exposure change and the color density change may be applied. Here, the thickness of the photosensitizer is adjusted so that the color density is C3 when the cumulative exposure is E1, and the color density is C4 when the cumulative exposure is E2 (> C3). Here, as the photosensitizer having a linear relationship between the change in cumulative exposure and the change in color density, for example, a polystyrene derivative resin, a photoacid generator, a developer, and propylene glycol monomethyl ether acetate (PGMEA) can be used. And propylene 200303039 alcohol monomethyl ether (PGME) mixture. For example, containing 10 to 20% of a polystyrene derivative resin, 0.4 to 1.0% of a photoacid generator, and 0.2 to 0.6% of a color developer, PGMEA and PGME are adjusted to 45 to 55% and 30 to The mixture in the 40% range has approximately the same operability as the conventional photoresist. At this time, as shown in FIG. 9B, if the photographic data on the scanning line L2 ′ of the overlapping area is extracted, for example, as shown in FIG. 9C, La is the second exposure portion and Lb is the first exposure portion ( > La), and Lc (> Lb) in the unexposed area. Therefore, for example, based on the following formula (4), the critical value Ls for 2 値 conversion is obtained.
Ls = (Lc — La) X 0.7 + La …⑷ 然後，根據臨界値Ls將攝影資料2値化的話，即能如 圖10A及圖10B所示，獲得與使用累積曝光量變化與著色 濃度變化爲非線性關係之感光劑時同樣的結果。亦即，根 據攝影資料中資料値之最大値與最小値、以及感光劑之特 性來決定用以進行2値化之臨界値，據此，即使感光既之 累積曝光量變化與著色濃度變化爲線性關係，亦能以良好 之精度求出定位精度。又，使用具有圖9A所示特性之感光 劑時，當塗於晶圓之感光劑膜厚不同時，即使2次曝光部 及1次曝光部之各累積曝光量相同，各部之著色濃度亦會 變化，據此所得之攝影資料（訊號波形）亦會與圖9C不同。 例如，會有得到2次曝光部之訊號強度La與1次曝光部之 訊號強度Lb爲相同程度之攝影資料的情形。因此，最好是 能視感光劑之膜厚改變攝影資料之處理條件（本實施形態中 ，例如，係決定臨界値Ls之上述式（4)之係數等），亦即， 200303039 改變圖案像之檢測條件，以對應該膜厚之適當的處理條件 來求出上述潛像之位置資訊（間隔等）。此時，不僅單單改變 上述式（4)之係數，亦可改變決定臨界値Ls之運算。 上述各實施形態中，由於係根據感光劑著色之有無資 訊來區別曝光部與未曝光部，因此使用了攝影資料之影像 處理，能進行與習知光阻像等場合同樣之處理。亦即，能 原封不動的利用習知的影像處理法。 又，上述各實施形態中，作爲感光劑之與顏色相關聯 的物理性質，雖係針對著色濃度作了說明，但並不限於此 ，亦可以是折射率、透射率、及反射率之至少1種。舉一 例而言，可將具有因累積曝光量而使分子結合狀態（例如， 疏密狀態）變化之性質的高分子材料，作爲感光劑構成成份 之一來加以對應。 特別是在利用折射率之變化時，作爲對準檢測系統AS ，例如使用被稱爲LSA(Laser Step Alignment，對標記照射 雷射光，利用繞射、散射之光來測量標記位置者）系統之對 準感測器，來檢測晶圓W上之圖案亦可。此時，由於在曝 光部與未曝光部之光折射率不同，當對圖案照射雷射光時 ，可根據其反射光或繞射光來測量圖案位置。因此，在習 知使用LSA系統之對準感測器進行之各種測量中，能適用 本發明。然後，由於不進行晶圓W之顯影，亦能進行圖案 位置之測量，因此，能以良好之精度、及高效率來進行測 量。此外，亦可使用對晶圓上之格子標記從既定方向（例如 垂直方向）照射雷射光束，以檢測該格子標記所產生之相同 42 200303039 次數繞射光（±n次繞射光）之干涉光的對準檢測器。此時， 可就複數次數分別檢測干涉光，並選擇至少1個次數以使 用該檢測結果亦可。 又，感光劑之反射率、透射率，例如，分別如圖11A 及圖11B所示·，係視圖案檢測用照明光之波長而有所不同 。因此，在利用感光劑之反射率、透射率之變化來檢測圖 案時，於曝光部與未曝光部間之反射率或透射率之差大的 窄頻帶（例如，圖11A之AR1、圖11B之AR2)中，例如使 用帶通過濾波器等來限制照明光之波長，即能提昇圖案之 檢感度。此種照明光之窄頻化（換言之，波長頻帶之變更）， 在使用以鹵素燈等之寬頻帶光來作爲照明光的FIA系統之 對準感測器時，特別有效。此外，將用以檢測對準感測器 所產生之±n次繞射光之干涉光的對準感測器，構成爲能從 同一方向對對準標記照射波長互異之複數雷射光束，且能 檢測各波長由對準感測器所產生之±n次繞射光之干涉光， 藉選擇於曝光部與未曝光部之反射率或透射率之差大的波 長，亦同樣的能提昇圖案之檢測感度。 《第3實施形態》 以下，根據圖12〜圖14，說明本發明之第3實施形態 〇 此處，係說明使用前述曝光裝置100，來測量晶圓W 上之能量束照射區域（對應前述投影區域）的照度分佈（照度 不均）之情形。 本第3實施形態中，於標線片R之圖案區域並未形成 43 200303039 任何圖案。來自照明系統IOP之照明光IL可直接穿透。又 ，與第1及第2實施形態不同的，於晶圓W上，塗有其著 色濃度與累積曝光量成比例變化，亦即，塗有累積曝光量 變化與著色濃度變化爲線性關係的感光劑。此時，亦可使 用含有聚苯乙烯衍生物樹脂、光酸產生劑、顯色劑、丙二 醇單甲醚乙酸酯（PGMEA)及丙二醇單甲醚（PGME)之混合物 來作爲感光劑。 此處，如圖12所示，感光劑之厚度，係調整爲累積曝 光量爲E5時著色濃度爲C5。此外，設1次曝光在晶圓W 上之曝光部之累積曝光量目標値爲E5。又，於投影光學系 統PL光軸方向之晶圓W之位置，係設定在最佳聚焦位置 〇 本第3實施形態與上第1及第2實施形態之最大不同 處在於，標線片R上並未形成圖案。圖13，係對應以主控 制裝置28之CPU所執行之一連串處理運算的流程圖，使用 此流程圖，說明本第3實施形態如下。 圖13之步驟601〜步驟603，係進行與第1實施形態 中步驟401〜步驟405相同之處理。 步驟605，係於晶圓W上設定N個假想矩形區域來作 爲曝光之目標區域，將表示該目標區域設定號碼之計數器1 設定爲1。然後，將最初之目標區域設爲曝光對象區域。又 ，此目標區域（曝光對象區域），係與元件製造中掃描曝光時 所設定之前述照射區域（投影區域）爲同大小及同形狀者。 步驟607，係一邊監測雷射干涉器26之測量結果一邊 44 200303039 透過晶圓載台驅動系統22來移動XY載台20，以使晶圓W 移動至投影光學系統PL之下方位置。然後，移動XY載台 20，以使晶圓W之位置成爲用以使晶圓W上之曝光對象區 域曝光之位置。 步驟609，係在此狀態下進行曝光。此處，由於目的爲 測量照度分佈，因此，曝光中，標線片R與晶圓W，亦即 ，標線片載台RST與XY載台20係靜止不動。據此，照明 光IL透過投影光學系統PL照射於晶圓W上之曝光對象區 域。晶圓W上之曝光對象區域，由於係將晶圓W上曝光部 之累積曝光量設定爲E5，因此，在累積曝光量爲E5處感 光劑之著色濃度雖會成爲C5(參照圖12)，但若在晶圓W上 之累積曝光量有不均現象時，則在累積曝光量少於E5處感 光劑之著色濃度會小於C5，另一方面，在累積曝光量多於 E5處感光劑之著色濃度會大於C5。 步驟611，係參照計數器i，來判斷是否對所有的目標 區域進行了曝光。此處，由於i=l，亦即，僅對最初的目 標進行了曝光，因此，於步驟611之判斷爲否定，而移至 步驟613。 步驟613，係對計數器i進行1的增加（+ 1)，以下一個 目標區域爲曝光對象區域後，回到步驟607。 以下，直到步驟611之判斷爲肯定爲止，反覆進行步 驟607— 609— 611-613之處理、判斷。 對所有目標區域之曝光結束後，計數器i之値即成爲N ，步驟611之判斷爲肯定，而移至步驟615。 45 200303039 步驟615，係將代表晶圓w上照射區域之排列號碼的 計數器k設定爲1，將最初的目標區域作爲測量對象區域。 步驟617，係藉由一邊監測雷射干涉器26之測量値， 一邊透過晶圓載台驅動系統22來控制XY載台22，將晶圓 W移動至晶圓W上之測量對象區域能以對準檢測系統AS 加以檢測之位置。 然後，使用對準檢測系統AS拍攝晶圓W上之測量對 象區域，取得攝影資料。例如，在攝影資料係各像素以8 位元加以數位化時，係以28= 256色調之濃度加以擷取。亦 即，攝影資料係以0〜255之數値來表示。接著，例如如圖 14A所示，將測量對象區域分割爲複數個區劃區域，將在 各區劃區域中心位置（測量點）之攝影資料分別加以抽出。此 處抽出之各攝影資料，係對應在各測量點之累積曝光量， 藉由比較在各測量點之攝影資料，即能求出測量對象區域 之相對累積曝光量分佈。例如，如圖14B所示，設定通過 測量對象區域中心、延伸於Y軸方向之掃描線L3，根據攝 影資料抽出在掃描線L3上各測量點之攝影資料的話，舉一 例而言，即能如圖14C所示，求出Y軸方向之相對累積曝 光量分佈 . 圖13之步驟619，係參照計數器k，判斷是否在所有 目標區域之累積曝光量分佈之測量皆已進行。此處，由於k =1，亦即，僅在最初的目標區域進行了累積曝光量分佈之 測量，因此步驟619之判斷爲否定，而移至步驟621。 步驟621，係增加計數器k之値（+ 1)，以下一個目標 46 200303039 區域爲測量對象區域後，回到步驟617。 以下，直到步驟619之判斷爲肯定爲止，反覆進行步 驟617-619—621之處理、判斷。 在晶圓W上所有目標區域之累積曝光量分佈之測量結 束後，計數器k之値即成爲N，步驟619之判斷爲肯定， 而移至步驟623。 步驟623，係對在所有目標區域求出之累積曝光量分佈 進行統計處理（例如，平均化），已作爲曝光裝置100的照度 分佈。然後，將所得之照度分佈儲存於記憶裝置27，且顯 示於未圖示之顯示裝置（例如3D圖示），結束處理。 如以上之說明，根據本第3實施形態，由於能根據感 光劑著色濃度之差異，來求出所照射之能量束之累積曝光 量之差異，因此，在將能量束照射於晶圓W上後，能直接 藉由測量設定在晶圓W上照射區域內之複數個測量點的感 光劑著色濃度，來檢測照射區域內累積曝光量大小之分佈 。因此，與習知方法（照射與測量點數相同次數之能量束， 以測量在各測量點之累積曝光量的方法）相較，能在短時間 內求出照射區域內之照度分佈。 又，根據本第3實施形態，由於能以1次曝光來檢測 出在照射區域內之累積曝光量大小之分佈，因此，光源本 身之能量變動的影響對各測量點之測量結果皆相同。是以 ，由於所求出之照射區域內之照度分佈不含光源能量變動 所造成之誤差，因此與習知方法相較，能以良好之精度求 出照射區域內之照度分佈。 47 200303039 再者，根據本第3實施形態，由於晶圓W上所塗之感 光劑之感度，不依存於光之照射角度，因此不致如習知使 用針孔感測器之方法般，降低在照射區域周邊之測量結果 的可靠性，於照射區域之全面，皆能以良好之精度求出照 度分佈。 又，上述第3實施形態中，雖係求出相對的累積曝光 量分佈，但亦可以藉由事先求出攝影資料與累積曝光量的 關係，來獲得非相對之累積曝光量分佈。又，本實施形態 中，雖係求出在作爲掃描方向之Y軸方向的照度分佈（曝光 量分佈），但由於Y軸方向之曝光量分佈之不均會因掃描曝 光而被某種程度的均勻化，因此，最好是至少求出於非掃 描方向之X軸方向的曝光量分佈。 再者，根據照度分佈之測量結果，由主控制裝置28製 作用以使照度分佈均勻之調整資訊，例如，製作照明系統 IOP中複眼透鏡及聚光透鏡系統（皆未圖示）之至少一方之位 置的調整資訊等。此外，亦可如特開平2002-100561號公報 所揭示般，將在照明系統IOP之光軸具有大致對稱之1維 或2維透射率分佈之濃度過濾器，以該光軸爲中心旋轉來 調整照度分佈，亦可根據照度分佈之測量結果以濃度過濾 器之旋轉角作爲調整資訊來加以製作。 又，上述第3實施形態，雖係使用未形成圖案之標線 片R，但在標線片載台RST未裝載標線片r的狀態下進行 曝光亦可。 進一步的，上述第3實施形態，雖係在使標線片載台 48 200303039 RST與XY載台20靜止的狀態下進行曝光，但使標線片載 台RST與ΧΥ載台20同步移動進行掃描曝光，能測量曝光 量分佈（曝光量不均現象），亦可根據該測量結果驅動照明光 學系統ΙΟΡ之光學元件（含前述濃度過濾器等）來調整照度分 佈，以使曝光量分佈均句。 又，上述第3實施形態中，雖係使晶圓上之複數個目 標區域分別曝光來求出複數之累積曝光量分佈，但僅使1 個目標區域曝光以求出累積曝光量分佈亦可。再者，目標 區域之曝光量，亦可以不是根據光阻感度特性的最佳曝光 量，例如，只要是使著色濃度產生能測量程度之差的曝光 量即可。又，若照明光IL係脈衝光時，亦可以目標區域曝 光時所照射之脈衝數來除以累積曝光量，以求出每1脈衝 之強度分佈（照度分佈）。 又，上述第3實施形態中，作爲感光劑之與顏色相關 連之物理性質，雖係就著色濃度作了說明，但並不限於此 ，亦可以是折射率、透射率、反射率之至少一者。 又，上述各實施形態，係1次拍攝測量對象區域，但 例如在須提昇攝影資料之分解能力之場合，亦可藉由提高 對準檢測系統AS之倍率，交互依序反覆進行使ΧΥ載台20 於XY2維方向步進既定距離的動作、與使用對準檢測系統 AS之攝影，據以分複數次進行攝影資料之取得亦可。以此 方式，能更進一步的提昇測定精度。此外，在採用例如特 開昭61-44429及與此對應之美國專利第4780617號等中所 詳細揭示之EGA方式時，係使用FIA系統等之對準感測器 49 200303039 檢測晶圓上之複數標記以獲得其位置資訊，且對該複數個 位置資訊進行統計處理來算出晶圓上各曝光照射區域之位 置資訊（座標値）。又’本案援用上述公報及對應美國專利之 揭示作爲本說明書記載的一部份。 然後，根據此算出之位置資訊一邊移動XY載台20， 一邊至少將標線片R之對準標記轉印至晶圓上之各曝光照 射區域，於晶圓上之至少1個曝光照射區域，以ΠΑ系統 等檢測對準標記之潛像與形成於晶圓之對準標記，求出此 兩者之間隔與其設計値加以比較，即能求出重疊精度（對準 精度）。此時，使用未形成圖案、對準標記之晶圓，根據曝 光照射區域之排列座標一邊移動XY載台20, 一邊分別對 應晶圓上複數個曝光照射區域來轉印對準標記。進一步的 ，將檢測晶圓上形成之對準標記之潛像所得之位置資訊， 以EGA方式加以處理來算出各曝光照射區域之位置資訊， 根據此算出之位置資訊移動XY載台20並再度轉印對準標 記，檢測第1次曝光與第2次曝光分別形成之對準標記之 潛像，來同樣的求出重疊精度亦可。 又，上述各實施形態中，雖係使用經由晶圓W之反射 光來測量感光劑物理性質之變化，但並不限於此，亦可使 用經由晶圓W之透射光。 此外，上述各實施形態中，雖係使用對準檢測系統AS 來測量感光劑物理性質之變化，但並不限於此，亦可使用 外部之測量裝置。再者，上述各實施形態中，雖係使用標 線片上形成之測量用圖案、或未形成圖案之標線片，但亦 50 200303039 可取代測里用圖案’例如使用標線片載台上形成之基準標 記’或亦可取代未形成圖案之標線片，而例如使用標線片 載台上形成之開口（透明窗）。 再者，本發明所應用之曝光裝置之光源，並不限於KrF 準分子雷射光源，亦可使用f2雷射（波長157nm)、或其他 真空紫外線帶之脈衝雷射光源。又，使用水銀燈等所產生 之i線或g線等紫外來作爲曝光用照明光亦可。除此之外 ，作爲曝光用照明光，例如，亦可使用將DFB半導体雷射 或光纖雷射所發出之紅外線帶、或可視帶之單一波長雷射 光，以例如摻雜有餌（或餌與鏡雙方）的光纖放大器加以放大 ’使用非線性光學結晶加以波長轉換成紫外光之高諧波。 再者，亦可使用EUV光、X光、或電子束及離子束等之帶 電粒子束來作爲曝光用光束。 又’上述各實施形態中，雖係就本發明應用於掃描步 進（step & scan)方式等掃描型曝光裝置之情形作了說明，但 本發明之適用範圍當然不限於此。亦即，本發明亦非常適 合使用於步進重複（step & repeat)方式之縮小投影曝光裝置 、1¾面投影對準曝光器（mirr〇r prC)jecti〇n aiigner)、或近接式 方式之曝光裝置等。再者，投影光學系統PL，無論是折射 系統、反射折射系統、以及反射系統之任一者皆可’爲縮 小系統 '等倍系統、以及放大系統之任一者皆可。 又’將由複數個透鏡構成之照明光學系統、投影光學 系統裝入曝光裝置本體並進行光學調整，且將由多數機械 零件組成之標線片載台、晶圓載台組裝於曝光裝置本體並 51 200303039 進行線路與管線之連接後，於調整步驟中，使用上述說明 之評價方法來評價投影光學系統之光學特性、兩載台之定 位精度、於照明區域之照度分佈等，根據該評價結果來調 整曝光裝置之特性，即能製造曝光精度優異之曝光裝置。 尤其是因爲不需要晶圓之顯影，所以在生產現場，並僅能 進行自我測量、自我調整，且其結果對生產性之提昇亦能 有所助益。又，亦可將上述評價結果及調整內容等，透過 未圖示之LAN等之網路，通知至管理生產之未圖示的管理 裝置。而在經過調整後曝光裝置之特性亦未達既定等級內 時，亦能藉由郵件（mail)等將此情況及相關資料立即通知給 承辦人及負責人。據此，即能早期發現生產現場之異常。 又，本發明之曝光裝置之製造方法，不僅能使用於製 造半導體元件所使用之曝光裝置，亦能適用於製造包含液 晶顯示元件、電漿顯示器之顯示器，將元件圖案轉印至玻 璃面板的曝光裝置，或用以製造之薄膜磁頭、將元件圖案 轉印至陶瓷晶圓上的曝光裝置，於攝影元件（CCD等）、微 機械、有機EL及DNA晶片等之製造，進一步的，在光罩 或標線片之製造時所使用之曝光裝置等。 如以上之說明，本發明之評價方法，非常適合在短時 間內評價曝光裝置之特性。此外，本發明之曝光裝置之製 造方法，非常適合製造曝光精度優異之曝光裝置。 【圖式簡單說明】 (一）圖式部分 第1圖，係顯示本發明第1實施形態之曝光裝置之槪 52 200303039 略構成的圖。 第2A圖，係用以說明第1實施形態所使用之測量用圖 案之一例的圖。 第2B圖，係用以說明第1實施形態所使用之感光劑之 特性的圖。 第3圖，係用以說明第1實施形態之評價方法的流程 圖。 第4A圖，係用以說明測量用圖案之轉印區域著色狀態 的圖。 第4B、4C圖，係分別用以說明圖案線寬値之測量方法 的圖。 第5A圖，係用以說明像之線寬値與聚焦位置之相關關 係的圖。 第5B圖，係用以說明使用重疊曝光來形成楔形標記像 時所使用之感光劑之特性的圖。 第5C圖，係用以說明使用重疊曝光所形成之楔形標記 像的圖。 第6A圖，係用以說明第2實施形態所使用之測量用圖 案之一例的圖。 第6B圖，係用以說明測量用圖案之轉印區域著色狀態 的圖。 第6C圖，係用以說明重疊於第6B圖轉印測量用圖案 後、晶圓上之轉印區域著色狀態的圖。 第7圖，係用以說明第2實施形態之評價方法的流程 53 200303039 圖。 第8A、8B圖，係分別用以說明第2實施形態中使用影 像處理進行位置偏差測量的圖。 第9A圖，係用以說明累積曝光量變化與著色濃度變化 爲線性關係之感光劑之特性的圖。 第9B、9C圖，係用以說明分別使用具有第9A圖之特 性之感光劑之情形的圖。 第10A、10B圖，係分別用以說明所測量之攝影資料之 2値化的圖。 第11A圖，係用以說明感光劑之反射率與波長之關係 的圖。 第11B圖，係用以說明感光劑之透射率與波長之關係 的圖。 第12圖，係用以說明本發明第3實施形態所使用之感 光劑之特性的圖。 第13圖，係用以說明第3實施形態之評價方法的流程 圖。 第14A〜14C圖，係分別用以說明第3實施形態之照度 分佈之測量方法的圖。 (二）元件代表符號 15, 24 移動鏡 16 對準控制裝置 18 晶圓台 20 XY載台 54 200303039 21 標線片干涉器 22 晶圓載台驅動系統 26 雷射干涉器 27 記憶裝置 28 主控制裝置 29 標線片載台驅動系統 100 曝光裝置 AS 對準檢測系統 I〇P 照明系統 PL 投影曝光系統 PU，PB 測量用圖案 RST 標線片載台 WST 晶圓載台 55Ls = (Lc — La) X 0.7 + La… ⑷ Then, if the photographic data 2 is converted according to the threshold 値 Ls, the cumulative exposure change and color density change can be obtained and used as shown in FIG. 10A and FIG. 10B. The same results were obtained when the photosensitizer had a non-linear relationship. That is to say, the critical value used for the two-dimensionalization is determined according to the maximum and minimum values of the data 値 in the photographic data and the characteristics of the photosensitizer. Based on this, even the change in the cumulative exposure of the light and the change in the color density are linear. The relationship can also be used to obtain positioning accuracy with good accuracy. In addition, when a photosensitizer having the characteristics shown in FIG. 9A is used, when the film thickness of the photosensitizer applied to the wafer is different, even if the cumulative exposure amounts of the two exposure sections and the one exposure section are the same, the color concentration of each section will be the same. Changes, the photographic data (signal waveform) obtained according to this will also be different from Figure 9C. For example, there may be a case where photographic data of the same intensity as the signal intensity La of the double exposure section and the signal intensity Lb of the single exposure section are obtained. Therefore, it is best to change the processing conditions of the photographic data depending on the film thickness of the photosensitizer (in this embodiment, for example, the coefficient of the above formula (4) that determines the critical value Ls), that is, 200303039 changing the pattern image The detection conditions are such that the position information (interval, etc.) of the latent image is obtained under appropriate processing conditions corresponding to the film thickness. At this time, not only the coefficient of the above formula (4) can be changed, but also the operation for determining the critical 値 Ls can be changed. In each of the above-mentioned embodiments, since the exposed portion and the unexposed portion are distinguished according to the availability of coloration of the photosensitizer, image processing using photographic data can be used to perform the same processing as in the case of conventional photoresist. That is, the conventional image processing method can be used intact. In each of the above embodiments, although the physical properties related to color as a photosensitizer have been described with respect to color density, it is not limited to this, and may be at least one of refractive index, transmittance, and reflectance. Species. For example, a polymer material having a property of changing a molecular binding state (for example, a dense state) due to a cumulative exposure amount can be used as one of the constituents of a photosensitizer. Especially when using the change in refractive index, as the alignment detection system AS, for example, the system pair called LSA (Laser Step Alignment, which irradiates laser light with a mark, and uses diffraction and scattered light to measure the position of the mark) A quasi-sensor can also be used to detect the pattern on the wafer W. At this time, since the refractive index of the light in the exposed and unexposed parts is different, when the pattern is irradiated with laser light, the position of the pattern can be measured based on the reflected light or the diffracted light. Therefore, the present invention can be applied to a variety of measurements conventionally performed using an alignment sensor of the LSA system. Since the pattern position can be measured without developing the wafer W, the measurement can be performed with good accuracy and high efficiency. In addition, it is also possible to irradiate a laser beam from a predetermined direction (such as a vertical direction) to a grid mark on a wafer to detect the interference light of the same 2003 200339 times diffraction light (± n times diffraction light) generated by the grid mark. Align the detector. In this case, the interference light may be detected for each of a plurality of times, and at least one may be selected to use the detection result. The reflectance and transmittance of the photosensitizer are, for example, shown in FIG. 11A and FIG. 11B, respectively, depending on the wavelength of the illumination light for pattern detection. Therefore, when a pattern is detected using changes in the reflectance and transmittance of a photosensitizer, a narrow frequency band having a large difference in reflectance or transmittance between the exposed portion and the unexposed portion (for example, AR1 in FIG. 11A, FIG. 11B In AR2), for example, by using a band-pass filter to limit the wavelength of the illumination light, the sensitivity of the pattern can be improved. This narrowing of the illumination light (in other words, a change in the wavelength band) is particularly effective when the FIA system alignment sensor uses a wide-band light such as a halogen lamp as the illumination light. In addition, an alignment sensor for detecting interference light of ± n times of diffracted light generated by the alignment sensor is configured to irradiate the alignment mark with plural laser beams having mutually different wavelengths from the same direction, and It can detect the interference light of ± n times of diffracted light generated by the alignment sensor at each wavelength. By selecting a wavelength with a large difference in reflectance or transmittance between the exposed portion and the unexposed portion, the pattern can also be improved. Detection sensitivity. << Third Embodiment >> Hereinafter, a third embodiment of the present invention will be described with reference to Figs. 12 to 14. Here, it is described that the exposure device 100 is used to measure the energy beam irradiation area on the wafer W (corresponding to the projection) Area) (illumination of illumination). In the third embodiment, no pattern is formed in the pattern region of the reticle R 43 200303039. The illumination light IL from the lighting system IOP can pass directly. In addition, unlike the first and second embodiments, the wafer W is coated with a photosensitivity that varies in proportion to the cumulative exposure, that is, a photoreceptor that has a linear relationship between the cumulative exposure change and the color density change. Agent. In this case, a mixture containing a polystyrene derivative resin, a photoacid generator, a developer, glycerol monomethyl ether acetate (PGMEA), and propylene glycol monomethyl ether (PGME) may be used as the photosensitizer. Here, as shown in FIG. 12, the thickness of the photosensitizer is adjusted so that the color density is C5 when the cumulative exposure is E5. In addition, let the target of cumulative exposure amount 曝光 of the exposure part exposed on the wafer W once be E5. The position of the wafer W in the optical axis direction of the projection optical system PL is set to the optimal focus position. The biggest difference between this third embodiment and the first and second embodiments is that the reticle R No pattern was formed. Fig. 13 is a flowchart corresponding to a series of processing operations executed by the CPU of the main control device 28. Using this flowchart, the third embodiment will be described as follows. Steps 601 to 603 in Fig. 13 perform the same processing as steps 401 to 405 in the first embodiment. In step 605, N imaginary rectangular regions are set on the wafer W as target regions for exposure, and a counter 1 indicating the target region setting number is set to 1. Then, the first target area is set as the exposure target area. In addition, this target area (exposure target area) is the same size and shape as the aforementioned irradiation area (projection area) set when scanning and exposing in component manufacturing. Step 607 is to monitor the measurement result of the laser interferometer 26 44 200303039 to move the XY stage 20 through the wafer stage driving system 22 to move the wafer W to a position below the projection optical system PL. Then, the XY stage 20 is moved so that the position of the wafer W becomes a position for exposing an exposure target area on the wafer W. In step 609, exposure is performed in this state. Here, since the purpose is to measure the illuminance distribution, during the exposure, the reticle R and the wafer W, that is, the reticle stage RST and the XY stage 20 are stationary. Accordingly, the illumination light IL is irradiated to the exposure target area on the wafer W through the projection optical system PL. Since the exposure target area on the wafer W is the cumulative exposure amount of the exposure portion on the wafer W is set to E5, the coloring density of the photosensitive agent at the cumulative exposure amount of E5 will become C5 (see FIG. 12). However, if there is unevenness in the cumulative exposure on the wafer W, the coloring density of the photosensitive agent will be less than C5 at the cumulative exposure of less than E5, and on the other hand, the cumulative exposure will be greater than that of E5 at the cumulative exposure. The coloring density will be greater than C5. In step 611, it is determined whether or not all target regions have been exposed by referring to the counter i. Here, since i = 1, that is, only the initial target is exposed, the judgment in step 611 is negative, and the process moves to step 613. In step 613, the counter i is incremented by 1 (+1). After the next target area is the exposure target area, the process returns to step 607. Hereinafter, until the judgment of step 611 is affirmative, the processing and judgment of steps 607-609-611-613 are repeatedly performed. After the exposure of all target areas is completed, the counter i becomes N, the determination in step 611 is affirmative, and the process moves to step 615. 45 200303039 In step 615, the counter k representing the array number of the irradiation area on the wafer w is set to 1, and the first target area is used as the measurement target area. Step 617 is to control the XY stage 22 through the wafer stage driving system 22 while monitoring the measurement of the laser interferometer 26, and to move the wafer W to the measurement target area on the wafer W so as to be aligned. The position to be detected by the detection system AS. Then, the measurement target area on the wafer W is photographed using the alignment detection system AS to obtain photographic data. For example, when the photographic data is digitized with 8 bits per pixel, it is captured at a density of 28 = 256 tones. That is, the photographic data is represented by a number from 0 to 255. Next, for example, as shown in FIG. 14A, the measurement target area is divided into a plurality of division areas, and the photographic data at the center position (measurement point) of each division area is extracted separately. Each photographic data extracted here corresponds to the cumulative exposure amount at each measurement point. By comparing the photographic data at each measurement point, the relative cumulative exposure amount distribution of the measurement target area can be obtained. For example, as shown in FIG. 14B, if the scanning line L3 extending through the center of the measurement target area and extending in the Y-axis direction is set, and the photographic data of each measurement point on the scanning line L3 is extracted from the photographic data, for example, it can be as follows As shown in FIG. 14C, the relative cumulative exposure amount distribution in the Y-axis direction is obtained. Step 619 of FIG. 13 refers to the counter k to determine whether the measurement of the cumulative exposure amount distribution in all target regions has been performed. Here, since k = 1, that is, the measurement of the cumulative exposure amount distribution is performed only in the initial target area, the judgment in step 619 is negative, and the process moves to step 621. In step 621, the counter k (+1) is incremented. After the area of the next target 46 200303039 is the measurement target area, return to step 617. Hereinafter, until the judgment of step 619 is affirmative, the processing and judgment of steps 617-619-621 are repeatedly performed. After the measurement of the cumulative exposure amount distribution of all target regions on the wafer W is finished, the value of the counter k becomes N, the determination in step 619 is affirmative, and the process moves to step 623. Step 623 is performing statistical processing (for example, averaging) on the cumulative exposure amount distributions obtained in all target areas, and has been used as the illumination distribution of the exposure device 100. Then, the obtained illuminance distribution is stored in the memory device 27 and displayed on a display device (for example, a 3D icon) (not shown), and the process is terminated. As described above, according to the third embodiment, the difference in the cumulative exposure amount of the irradiated energy beam can be obtained based on the difference in the coloring concentration of the photoreceptor. Therefore, after the energy beam is irradiated on the wafer W, It is possible to detect the distribution of the cumulative exposure amount in the irradiated area directly by measuring the coloring density of the photosensitizer at a plurality of measurement points set in the irradiated area on the wafer W. Therefore, compared with a conventional method (a method of irradiating an energy beam of the same number of times as the number of measurement points to measure the cumulative exposure amount at each measurement point), the illuminance distribution in the irradiation area can be obtained in a short time. In addition, according to the third embodiment, since the distribution of the cumulative exposure amount in the irradiation area can be detected with one exposure, the influence of the energy variation of the light source itself on the measurement results of each measurement point is the same. Therefore, since the illuminance distribution in the obtained irradiated area does not include the error caused by the energy variation of the light source, compared with the conventional method, the illuminance distribution in the irradiated area can be obtained with good accuracy. 47 200303039 Furthermore, according to the third embodiment, the sensitivity of the photosensitizer applied on the wafer W does not depend on the irradiation angle of the light, so it is not reduced as in the conventional method using a pinhole sensor. The reliability of the measurement results around the irradiated area can be obtained with good accuracy over the entire irradiated area. In the third embodiment described above, although the relative cumulative exposure amount distribution is obtained, the relationship between the photographic data and the cumulative exposure amount may be obtained in advance to obtain a non-relative cumulative exposure amount distribution. In this embodiment, although the illuminance distribution (exposure amount distribution) in the Y-axis direction which is the scanning direction is obtained, the unevenness of the exposure amount distribution in the Y-axis direction is affected to some extent by scanning exposure. For uniformization, it is desirable to obtain an exposure amount distribution in at least the X-axis direction in a non-scanning direction. Furthermore, according to the measurement result of the illumination distribution, the main control device 28 generates adjustment information for making the illumination distribution uniform, for example, at least one of the fly-eye lens and the condenser lens system (neither shown) in the lighting system IOP is produced. Position adjustment information, etc. In addition, as disclosed in Japanese Patent Application Laid-Open No. 2002-100561, a concentration filter having a substantially symmetrical one-dimensional or two-dimensional transmittance distribution on the optical axis of the lighting system IOP can be adjusted by rotating around the optical axis. The illuminance distribution can also be created based on the measurement results of the illuminance distribution using the rotation angle of the density filter as adjustment information. In the third embodiment described above, although the reticle R having no pattern is used, exposure may be performed in a state where the reticle r is not loaded with the reticle stage RST. Furthermore, in the third embodiment described above, although the reticle stage 48 200303039 RST and the XY stage 20 are stationary, the exposure is performed, but the reticle stage RST and the XY stage 20 are moved in synchronization to perform scanning. Exposure can measure the exposure amount distribution (exposure unevenness phenomenon), and can also drive the optical elements of the illumination optical system 100P (including the aforementioned density filter, etc.) to adjust the illumination distribution according to the measurement result, so that the exposure amount distribution is uniform. In the third embodiment described above, although a plurality of target areas on the wafer are individually exposed to obtain a plurality of cumulative exposure amount distributions, only one target area may be exposed to obtain a cumulative exposure amount distribution. In addition, the exposure amount of the target area may not be the optimum exposure amount based on the photoresist sensitivity characteristic, and for example, it may be an exposure amount that causes a difference in measurable degree of color density. When the illumination light IL is pulsed light, the number of pulses irradiated when the target area is exposed can be divided by the cumulative exposure to obtain the intensity distribution (illuminance distribution) per pulse. In the third embodiment described above, although the color-related physical properties of the photosensitizer are described in terms of color density, it is not limited to this, and may be at least one of refractive index, transmittance, and reflectance. By. In addition, each of the above embodiments captures the measurement target area once. However, for example, when it is necessary to improve the resolution capability of the photographic data, you can increase the magnification of the alignment detection system AS and interact with each other in order. 20 The movement of stepping a predetermined distance in the XY2 direction and the photography using the alignment detection system AS can be used to obtain photographic data multiple times. In this way, the measurement accuracy can be further improved. In addition, when the EGA method disclosed in detail in, for example, Japanese Patent Application Laid-Open No. 61-44429 and the corresponding U.S. Patent No. 4,780,617 is used, an alignment sensor 49 200303039 of a FIA system or the like is used to detect the plural number on the wafer. Mark to obtain its position information, and perform statistical processing on the plurality of position information to calculate the position information (coordinates) of each exposure irradiation area on the wafer. In addition, the above-mentioned publication and the corresponding disclosure of the U.S. patent are cited as a part of the description in this case. Then, while moving the XY stage 20 based on the calculated position information, transfer at least the alignment mark of the reticle R to each exposure irradiation area on the wafer, and at least one exposure irradiation area on the wafer. The latent image of the alignment mark and the alignment mark formed on the wafer are detected by the ΠΑ system, and the interval between the two is compared with its design. That is, the overlap accuracy (alignment accuracy) can be obtained. At this time, using a wafer without a pattern and an alignment mark, the XY stage 20 is moved according to the arrangement coordinates of the exposure irradiation area, and the alignment marks are transferred corresponding to the plurality of exposure irradiation areas on the wafer. Further, the position information obtained by detecting the latent image of the alignment mark formed on the wafer is processed by the EGA method to calculate the position information of each exposure irradiation area, and based on the calculated position information, the XY stage 20 is moved and turned again An alignment mark is printed, and a latent image of the alignment mark formed by the first exposure and the second exposure is detected, and the overlap accuracy can be obtained in the same manner. In each of the above-mentioned embodiments, although the change in the physical properties of the photosensitizer is measured using reflected light through the wafer W, it is not limited to this, and transmitted light through the wafer W may also be used. In addition, in each of the above embodiments, although the alignment detection system AS is used to measure the change in the physical properties of the photosensitizer, it is not limited to this, and an external measurement device may be used. Moreover, in each of the above embodiments, although a measurement pattern formed on the reticle or a reticle without a pattern is used, it can also be used instead of the pattern for measurement. For example, it can be formed on a reticle stage. The reference mark 'may also replace the unmarked reticle, and for example, an opening (transparent window) formed on the reticle stage may be used. Furthermore, the light source of the exposure device used in the present invention is not limited to the KrF excimer laser light source, but also an f2 laser (wavelength 157nm), or other pulsed laser light source in a vacuum ultraviolet band. Further, ultraviolet rays such as i-line and g-line generated by a mercury lamp or the like may be used as the illumination light for exposure. In addition, as the illumination light for exposure, for example, a single-wavelength laser light in an infrared band or a visible band emitted from a DFB semiconductor laser or an optical fiber laser may be used, for example, doped with bait (or bait and Fiber on both sides of the mirror) to amplify 'using nonlinear optical crystals to convert wavelengths into high harmonics of ultraviolet light. Further, as the exposure light beam, EUV light, X-rays, or a charged particle beam such as an electron beam and an ion beam may be used. In each of the above embodiments, the case where the present invention is applied to a scanning type exposure device such as a step & scan method has been described, but the scope of application of the present invention is not limited to this. That is, the present invention is also very suitable for use in a step & repeat mode reduction projection exposure device, a 1-facet projection alignment exposure device (mirror prC), or a proximity method. Exposure device, etc. In addition, the projection optical system PL may be any of a refractive system, a refracting system, and a reflecting system, and may be any one of a reduction system, an equal magnification system, and an amplification system. Furthermore, the illumination optical system and projection optical system composed of a plurality of lenses were incorporated into the exposure apparatus body and optical adjustment was performed, and a reticle stage and a wafer stage composed of most mechanical parts were assembled in the exposure apparatus body. 51 200303039 After the line and pipeline are connected, in the adjustment step, use the evaluation method described above to evaluate the optical characteristics of the projection optical system, the positioning accuracy of the two stages, and the illuminance distribution in the illumination area, etc., and adjust the exposure device based on the evaluation results. It has the characteristics that it can produce an exposure device with excellent exposure accuracy. In particular, because wafer development is not required, only self-measurement and self-adjustment can be performed at the production site, and the results can also help improve productivity. In addition, the evaluation results, adjustment contents, etc. may be notified to a management device (not shown) that manages production through a network such as a LAN (not shown). When the characteristics of the exposure device after adjustment have not reached the predetermined level, the situation and related information can be immediately notified to the organizer and the person in charge by mail. Based on this, abnormalities in the production site can be detected early. In addition, the manufacturing method of the exposure device of the present invention can be used not only for an exposure device used for manufacturing a semiconductor element, but also for manufacturing a display including a liquid crystal display element and a plasma display. The element pattern is transferred to a glass panel for exposure. Device, or an exposure device used to manufacture a thin-film magnetic head and an element pattern transferred onto a ceramic wafer, for the manufacture of photographic elements (CCD, etc.), micro-mechanics, organic EL, and DNA wafers, etc. Or exposure equipment used in the manufacture of reticle. As described above, the evaluation method of the present invention is very suitable for evaluating the characteristics of an exposure device in a short time. In addition, the manufacturing method of the exposure device of the present invention is very suitable for manufacturing an exposure device with excellent exposure accuracy. [Brief description of the drawings] (I) Schematic part The first figure is a diagram showing the schematic configuration of the exposure device 52 200303039 of the first embodiment of the present invention. Fig. 2A is a diagram for explaining an example of a measurement pattern used in the first embodiment. Fig. 2B is a diagram for explaining the characteristics of the photosensitizer used in the first embodiment. Fig. 3 is a flowchart for explaining the evaluation method of the first embodiment. Fig. 4A is a diagram for explaining a colored state of a transfer region of a measurement pattern. Figures 4B and 4C are diagrams used to explain the measurement method of the pattern line width, respectively. Fig. 5A is a diagram for explaining the relationship between the line width of the image and the focus position. Fig. 5B is a diagram for explaining the characteristics of a photosensitizer used in forming a wedge-shaped mark image using overlapping exposure. Fig. 5C is a diagram for explaining a wedge-shaped mark image formed by overlapping exposure. Fig. 6A is a diagram for explaining an example of a measurement pattern used in the second embodiment. Fig. 6B is a diagram for explaining a colored state of a transfer region of a measurement pattern. Fig. 6C is a diagram for explaining the coloring state of the transfer area on the wafer after superimposed on the transfer measurement pattern of Fig. 6B. Fig. 7 is a flowchart for explaining the evaluation method of the second embodiment 53 200303039. Figs. 8A and 8B are diagrams for explaining position deviation measurement using image processing in the second embodiment, respectively. Fig. 9A is a graph for explaining the characteristics of a photosensitizer having a linear relationship between a change in cumulative exposure and a change in color density. Figures 9B and 9C are diagrams for explaining a case where a photosensitizer having the characteristics of Figure 9A is used separately. Figures 10A and 10B are diagrams used to explain the two reductions of the measured photographic data, respectively. Fig. 11A is a diagram for explaining the relationship between the reflectance of the photosensitizer and the wavelength. Fig. 11B is a diagram for explaining the relationship between the transmittance and the wavelength of the photosensitizer. Fig. 12 is a diagram for explaining the characteristics of the photosensitizer used in the third embodiment of the present invention. Fig. 13 is a flowchart for explaining the evaluation method of the third embodiment. Figures 14A to 14C are diagrams for explaining the measurement method of the illuminance distribution in the third embodiment. (2) Symbols for components 15, 24 Moving mirror 16 Alignment control device 18 Wafer table 20 XY stage 54 200303039 21 Graticule interferometer 22 Wafer stage drive system 26 Laser interferometer 27 Memory device 28 Main control device 29 reticle stage drive system 100 exposure device AS alignment detection system I0P illumination system PL projection exposure system PU, PB measurement pattern RST reticle stage WST wafer stage 55