TH9359B - The system and how to program a non-volatile memory protection when it fails. - Google Patents

Abstract

The invention deals with a non-volatile memory write protection system when a fault occurs. This system uses high-voltage capacitors, which are used for Memory device program A second capacitor is used to supply electrical power to the Logic control to program memory devices If electric power is removed during Currently in programming cycle Will make the charge stored in the secondary capacitor sufficient to make The cycle of programming has been completed successfully.

Claims (2)

1. Write Protection Non-volatile memory when error occurs is composed of a combination of non-volatile memory to perform data storage functions. The first capacitor is connected to the aforementioned nonvolatile memory. To act To charge and program the voltage to the non-volatile memory. The control unit which is connected to the aforementioned non-volatile memory. To act To receive an external signal to the aforementioned non-volatile memory program and to perform the function of transmitting a signal with information to the program, the desired address location in Such non-volatile memory With information when such a control method will monitor the signal that Given that the value of the said charge stored in that one such capacitor path is sufficient to go. The program places the desired address in the aforementioned nonvolatile memory. Such information Even when the external power source is removed from the memory Remember the aforementioned non-volatile and the second capacitor connected to the said control unit. To act as a supply Power to the control unit. 2. Non-volatile memory write protection when a fault occurs. Attached to claim 1 will also consist of A detector that is connected to the first capacitor to monitor the charge stored in the first capacitor. 3. Write protection for non-volatile memory. Missed up the insert In line with claim No. 1 will also consist of High-power voltage generator connected to With one such capacitor To function in the charge of the one such capacitor. 4. Non-volatile memory write protection system when an error occurs at the insert. Attached to claim 1 will also consist of A bolt lock that is connected to the control unit to function in taking the address of the said address in the non-erasing memory. Such fuzzy that will be applied to the program. And transfer the information to the location of the 5. Write protection, non-volatile memory when errors occur at the insert. Attached to claim 1 will also consist of A resistor connected to a memory that is not Erase it To act to control the oscillation rate of the voltage to the memory 6. Non-volatile memory write protection system when errors occur in the insert. Attached to claim 1 will also consist of The current source connected to the memory That does not erase it To act to control the oscillation rate of the voltage to the unit 7. Non-volatile memory write protection when an error occurs. Attached to claim 1 will also consist of One switch connected to the first capacitor and the control unit thereof To program the aforementioned voltage from the aforementioned capacitor to the unit. Such non-volatile memory and a second switch connected to the first capacitor and the said control unit. To function of discharging such capacitors and such non-volatile memory When the programming cycle is complete, it will continue to be sent to the non-volatile memory. 8. Write-protection system, non-volatile memory when errors occur at the insert. Attachment to claim 3 will also consist of A diode connected to a voltage generator Such high power and one such capacitor To function of limiting feedback To the high voltage generator to prevent the discharge of the aforementioned capacitor. 9. Write protection, non-volatile memory when a fault occurs. This corresponds to claim 1 where there is non-volatile memory (Electrical Erasable Programmable Read Only Memory). EEPROM 1 0. Write Protection Non-volatile memory when a memory occurs. Crashed up at Corresponds to claim 1, where such non-volatile memory consists of: Using the Data Storage Gaiter Counter 1 1. Write protection for non-volatile memory when an error occurs at Corresponds to claim 10, where the use of the aforementioned gaiter counter is a gray code counter with four twists. 1 2. Write protection non-volatile memory. Up at Corresponds to claim 1, where non-volatile memory consists of: The first row contains the even-numbered addresses of the non-volatile memory, and the second row contains the odd-numbered addresses of the non-volatile memory. 1 3. Write-protect. Non-volatile memory when something goes wrong at Corresponds to claim 12, where both the first and second row components of The non-volatile memory is programmed with data at the same time. 1 4. Write Protection The non-volatile memory when faulty occurs is composed of a combination of non-volatile memory to function. To collect information Using a gaiter counter with four twists To perform the function of keeping the data in the non-erase memory Such fuzzy The first capacitor connected to the aforementioned nonvolatile memory. To act To charge and supply a voltage program to the aforementioned nonvolatile memory. A high-voltage generator connected to the first capacitor to charge the first capacitor. A diode that is connected to the aforementioned high voltage generator and a capacitor that One such To function of eliminating feedback to the aforementioned high voltage generator to prevent the discharge of the aforementioned capacitor. A detector that is connected to one such capacitor. To perform the duty of monitoring Charge stored in one such capacitor The control unit connected to the aforementioned non-volatile memory. To act in Receives a signal from outside the non-volatile memory program and sends a signal, along with its data, to program the desired address location in the non-volatile memory when the detector shows that the charge it holds. In the first capacitor It is close to the level showing that the charge stored in the first such capacitor is only It is enough to program to the desired address location in the said non-volatile memory with that information. Even when the external energy source is released Away from that non-volatile memory The current limiter connected to the aforementioned nonvolatile memory. And the source of strength Such high power voltage To act to control the oscillation rate of the voltage to Such non-volatile memory Bolt-down coupler connected to the control unit To perform the function of getting the location of the address In such non-volatile memory Will be programmed and transferred The data to the location of the desired address. The second capacitor connected to the aforementioned control unit. To act as a source Supply electric power to the said control unit and the aforementioned bolt. The first switch is connected to the first capacitor and the control unit thereof. To program the aforementioned voltage from the aforementioned capacitor to the unit. Such an indelible memory The second switch is connected to the first capacitor and the control unit thereof. To perform the discharge function of the aforementioned capacitor, and the said non-volatile memory, when the programming cycle is complete, it is sent to the non-volatile memory. 1 5. Write protection, non-volatile memory when the error occurs. Corresponds to claim 14, where there is a resistor current limiter 1 6. Write protection, non-volatile memory when a fault occurs at Corresponds to claim 14, where there will be a current limiter as a current source 7. Write protection, non-volatile memory when a fault occurs at Consistent with claim 14, where there will be EEPROM non-volatile memory (EEPROM) 1. 8. Write Protection Non-volatile memory when error occurs. Corresponds to claim 14, where the non-volatile memory consists of a row one containing the even-numbered addresses of such non-volatile memory and the second row. It contains an odd address for the non-volatile memory. In which the first row sounds Said, and the second row, both of the aforementioned nonvolatile memory. Will program too 1 9. Methods for obtaining a non-volatile memory write protection system. The mistake happened. Will consist of steps of Providing non-volatile memory for data retention functions. The first arrangement of capacitors is connected to the non-volatile memory to carry out the charge and program the voltage to the memory. Do not erase it Provision for a voltage generator that is connected to the first such capacitor. To act on the capacitor at one such Preparation for a check that is connected to the first such capacitor. To act in Monitoring of the said charge contained in the first capacitor Providing a control unit connected to the aforementioned non-volatile memory to perform the function of receiving an external signal to program the non-volatile memory and transmit a signal with information to the desired address location program. In memory that does not Erase it When the detector knows it, it shows that the said charge stored in the capacitor that One such capacitor is close to the level indicating that the aforementioned charge is stored in one such capacitor. It is sufficient to program to the desired address location in the memory that is Do not erase it already with such information. Mom said when the source of external energy will be Remove from the non-volatile memory. The arrangement of bolts connected to the said control unit. To act in receiving The desired address location in the aforementioned nonvolatile memory is programmed and transferred to the desired address location and a second capacitor connected to the control unit. say To act As a source of electrical energy to the control unit and the aforementioned bolts 2 0. The Clause 19 method also includes the procedures for Provision of a current limiter connected to the aforementioned nonvolatile memory and such a high-power voltage generator. To act to control the swing rate of the pressure Electricity to the aforementioned nonvolatile memory. Provision of a first switch connected to the aforementioned capacitor and the control unit to function in the programming of that voltage from the voltage capacitor. High power to such non-volatile memory. Provision of a second switch connected to the aforementioned capacitor and the control unit to perform the function of discharging the said capacitor and the non-volatile memory during the programming cycle. Complete and then it will be sent to the non-volatile memory As mentioned next Provision of diodes connected to such a high-voltage generator, and The first such capacitor to handle the feedback to the voltage generator. Such high power To prevent the discharge of the first such capacitor 2 1. Method of claim 20, where such procedure of obtaining units Non-volatile memories will also consist of The procedure for using a four-bit square code counter to function for storing data in such non-volatile memory 2. 2. Method of claim 21, where such procedure of obtaining units Non-volatile memories will also consist of Non-volatile memory steps have rows that One contains the even-numbered addresses of the non-volatile memory, and the second row contains the odd-numbered addresses of the non-volatile memory. Which row one And the second row, both of the non-volatile memory. Will be programmed with data at the same time