TH7539C3 - A process for producing a silicon film with a voltage surface containing silica content obtained from the husk for the determination of volatile compounds, benzene and its derivatives. - Google Patents

Abstract

DC60 (08/09/54) silicon film With the surface having voltage Containing silica obtained from rice husk is a SPV sheet coated with MCM 41 that has been surface treated to be suitable for adsorption. Volatile organic compounds can be non-polar or low-polar, such as benzene and benzene derivatives. By using MCM 41 material to react with trimethyl chlorosilane. Under the right conditions Silicon film, with the surface being voltage The prepared products will be effective in absorbing benzene gas well. With a concentration of 20-50 parts in the hundred (ppm), so it can be developed for use as a device. In the measurement of volatile organic compounds commercially Silicon film With the surface having voltage Containing silica obtained from rice husk is a SPV sheet coated with MCM 41 that has been surface treated to be suitable for adsorption. Volatile organic compounds can be non-polar or low-polar, such as benzene and benzene derivatives. By using MCM 41 material to react with trimethyl chlorosilane. Under the right conditions Silicon film, with the surface being voltage The preparation is effective in absorbing benzene gas at concentrations of 20-50 parts per hundred (ppm), so it can be further developed for use as a device. In the measurement of volatile organic compounds commercially

Claims (7)

1. Silicon film production process With the surface having voltage The steps are as follows: a. Silicon dioxide solution (MCM 41) was mixed with trimethyl chlorochilane solution at 25-30 degrees Celsius for a period of time. 1-2 days for precipitation b. Filtration, then wash the sediment obtained in Article A with toene and acetone. Then the sludge was dissolved in toluene at a ratio of 0.02 g / 10 ml. C. SPV sheet was coated with either silver glue or electrode, leaving a straight circle. D. Drop the solution obtained from item B. 0.1-0.2 mm in a circular hole on the SPV plate. That was coated with silver glue or one of the electrodes from the clause J. The coated film was then baked at 105 degrees, Sengxias for 0.5-1 hour. 2. Silicon film production process With the surface having voltage Containing silica obtained from rice husk According to claim 1, where the trimethyl chlorosylane solution is 5 ml of trimethyl chlorosylane with 100 ml toluene 3. Silicon film production process With the surface having voltage Containing silica obtained from rice husk According to claim 1, where the silicon dioxide solution (MCM 41) is a hexade compound. Siltrimethyl ammonium bromide (CTAB) mixed with sodium silicate solution. That adjusted the PH value There is a pH of 10, stirring 1-3 days at room temperature. The sediment was then filtered and incinerated at 500-600 oC for 4-6 hours and dissolved in ethanol at a ratio of 2 g of sediment per 1 liter of ethanol. 4. Silicon film production process With the surface having voltage Containing silica obtained from rice husk According to claim 1, where the coating, glue, either silver or electrodes On the voltage surface film is either a silver adhesive coating or an electrode. On the film on the side that is attached to the film Silicon nitride 5. Silicon film production process With a voltage page Containing silica obtained from rice husk According to claim 3, where hexadecyl trimethylammonium bromide is a solution of 1 g of sodium hydroxide, 3 g of CTA, and 150 ml of distilled water, it is dissolved as Homogeneous 6. Silicon film production process With the surface having voltage Containing silica obtained from rice husk According to claim 3, where the sodium silicate solution is 2 g of sodium hydroxide solution mixed with 5 g of rice husk silica and 10 ml of distilled water. 7.Silicon film production process With the surface having voltage Containing silica obtained from rice husk According to claim 6, where silica from rice husk is rice husk, which has gone through the following steps: a. The husk is washed and cleaned; b.Reflux the husk with hydrochloric acid at a concentration of 1-5 molar at temperature 50 -80 ° C. Wash the rice husk with water until the washing water has a neutral pH. Test the water, rinse with litmus paper until Litmus paper does not change its color. D. Husk is baked at 100-115 degrees Celsius for 24 hours. E. The dried husk will be burned in an oven set at 500-700 degrees Celsius for a period of time. All about 4-6 hours.