TH41412B - A semiconductor diode with a carrier-free polysilicon diode method and structure. - Google Patents

Abstract

High voltage tolerant diode construction for mixed voltage. and mixed signal and signal use Analog/Digital A suitable silicon diode will include at least a polysilicon gate structure on it. the best film First dielectric layer on the semiconductor (silicon) layer or body, basin or area to be doped. They are made either in the primary semiconductor base layer or in the surface silicon layer on the SOI wafer. will reduce the voltage drop across the dielectric film. Pure polysilicon film may be reverse doped. buried with low doped burial will be buried by burial Low doped source/drain or with low doped LDD MOSFETs. Optionally, a set of mask tasks may be performed over the gate structure when a type of silicon gate diode is assigned. Carrier-free polysilicon to embed a low-order resistance diode. will prevent contamination Alternatively, a hybrid photoresist method may be used to fabricate a higher doped edge embedded in the silicon in order to reduce the contact resistance of the film. Diodes without a set of mask work.

Claims (1)

1. A semiconductor chip contains The semiconductor layer including the first conductivity area With one conductor type And a second conduction area with a second type of conductor The dielectric layer on the aforementioned semiconductor layer and the conductive layer on the dielectric layer between the first and second conductive region. One such type of conductor And a second area where there is such a second type of conductor One such area will be