TH36084A - Manufacturing process of semiconductor support material - Google Patents

Abstract

DC60 (24/03/42) produces SOI compliant materials with uncompromising quality and good reproducibility at one time, achieving resource savings and cost reduction through the use of new slabs and the like. Taking action to accomplish the above is the seizure phase. Attach the primary surface of the first support to the primary surface of the second support, the first substrate is a Si support, which produces a One or more layers of Non-porous thin film through porous Si layer, the process of exposing the porous Si layer in the lateral surface of the adhered substrate consisting of the first substrate and the substrate. Second receptacle, phase of division Substrate bonded in a porous Si layer by oxidizing the bonded substrate. And the process of separating porous Si layer and oxidized porous Si layer. On the second support material Separated by dividing the substrate bonded in the porous Si layer, SOI support is produced with just the right quality and with good reproducibility. At one time, the savings of resources and cost reduction are realized through the use of new slabs and the like that have been done to achieve the above are the anchoring stages. Attach the primary surface of the first support material. On the primary surface of the second substrate.The first substrate is Si support, which At least one layer of non-porous thin film passes through the porous Si layer, the process of exposing the porous Si layer in the lateral surface of the A fixed support material consisting of the first support material and the material. Second support, the process of dividing the bonded substrate in the porous Si layer by oxidizing the bonded substrate. And the process of separating porous Si layer and oxidized porous Si layer. On the second support material Separated by division Backing material bonded in porous Si layer

Claims (1)

1.Production process of the semiconductor support material Consists of: The process of adhering to the primary surface of the first support to the primary surface of the second support, the previously mentioned first substrate is a Si backing that forms at least one layer of film. Thin non-porous through porous Si layer: The process of exposing the aforementioned porous Si layer in the lateral surface of the bonded substrate consisting of the substrate. The first mentioned, and the second said support material; The process of dividing the substrate bonded into the aforementioned porous Si layer on the tag: