TH28326A - - Google Patents

Abstract

DC60 (16/09/40) This invention relates to light electronic materials. Containing a single medium that has Controllable electrical properties; And ultra-fine particles of the semiconductor in the medium and It has an average particle size of 100nm or less, and applications using such materials are also involved in a method of producing light electronic materials by projecting a laser beam onto a target. The first mark of the semiconductor material was placed in the reaction chamber in the environment. Low pressure inert gas, and the second target of the medium with controlled electrical properties was placed in the reaction chamber, condensation / generation of semiconductor material that was removed from the first target to be deposited into the Ultra fine with an average particle size of 100nm or less on a substrate placed in the reaction chamber, and condensation / formation. Media material removed from the second target to be deposited on the substrate that Was placed in the reaction chamber. So that a layer of ultra-fine particles scattered with particles that Super fine semiconductor is distributed in the medium on the substrate. Invention Conclusion This invention relates to light electronic materials that Consists of a single medium with controlled electrical properties; And ultra-fine particles of semiconductors in Medium and has an average particle size of 100 nm or less, and Applications that use such materials Invention Is also related to the production method of light electronic materials by Project a laser beam on the first target of the semiconductor material. That was placed in the reaction chamber in the environment Inert gas pressure Low, and the second target of the medium with electrical properties A controlled place in the reaction chamber, condensation / generation Semiconductor material removed from the first target To be deposited into ultra-fine particles with an average particle size of 100 nm or less on a substrate placed in the chamber. Reaction, and condensation / formation of the eliminated media material From the second target to be deposited on a substrate placed in the reaction chamber to form a layer with fine particles. Specially dispersed containing ultra-fine particles of substance The semiconductor is distributed in the medium on the secondary base.

Claims (3)

: DC60 (16/09/40) This invention relates to light electronic materials. Containing a single medium that has Controllable electrical properties; And ultra-fine particles of the semiconductor in the medium and It has an average particle size of 100nm or less, and applications using such materials are also involved in a method of producing light electronic materials by projecting a laser beam onto a target. The first mark of the semiconductor material was placed in the reaction chamber in the environment. Low pressure inert gas, and the second target of the medium with controlled electrical properties was placed in the reaction chamber, condensation / generation of semiconductor material that was removed from the first target to be deposited into the Ultra fine with an average particle size of 100nm or less on a substrate placed in the reaction chamber, and condensation / formation Media material removed from the second target to be deposited on the substrate that Was placed in the reaction chamber. So that a layer of ultra-fine particles scattered with particles that Super fine semiconductor is distributed in the medium on the substrate. Invention Conclusion This invention relates to light electronic materials that Consists of a single medium with controlled electrical properties; And ultra-fine particles of semiconductors in Medium and has an average particle size of 100 nm or less, and Applications that use such materials Invention It is also related to the production method of light electronic materials by Project a laser beam on the first target of the semiconductor material. That was placed in the reaction chamber in the environment Inert gas pressure Low, and the second target of the medium with electrical properties A controlled place in the reaction chamber, condensation / generation Semiconductor material removed from the first target. To be deposited into ultra-fine particles with an average particle size of 100 nm or less on a substrate placed in the chamber. Reaction, and condensation / formation of the eliminated media material From the second target to be deposited on a substrate placed in the reaction chamber to form a layer with fine particles. Specially dispersed containing ultra-fine particles of substance The semiconductor is distributed in the medium on the Proposition Base (Section One) which appears on the Notice: Claims. 1.Optical electronic material consists of: a single medium with controlled electrical properties. Yes; and the ultra-fine particles of the Distributed in the said medium And have an average particle size of 100 nm or more 2.Electronic material, light According to claim 1, the diameter of the semiconductor's ultra-fine particle center is equal or smaller than twice the derpro wavelength, where Estimation of semiconductor materials for ultra fine particles 3.Electronic materials, lighting According to the first claim, Glatag: