TH2002A - Methods and devices for the manufacture of stacked basal photovoltaic cells. - Google Patents

Abstract

Methods and equipment for the production of continuously stacked amorphous photovoltaic cells on the base material, where at least 6 amorphous semiconductor layers are continuously and sequentially bonded onto the base material. Material under stable conditions The base material is driven from the supply rod through a series of three Hold at least two sets of islands to the receiving axis. Each amorphous layer Of D-I-N cells Each cell is produced in a chamber. One of the three units of the island capture room. In the force chamber of the substance pack Each unit of the room The contaminated gas mixture is taken. In order to form a first layer of semiconductor bonded on the base in the second chamber of each three-unit unit. The gas mixture is imported to form the intrinsic adhesion layer on the first floor and in the third chamber of each of the three doped gas combinations. The mixtures will be imported to achieve a second class conductive conductive condition. Lead in contrast to the first-class conductive Grabbed down on the Eagle Nlik floor, the equipment suite was built to protect Nearly complete at (1) so that the gas does not contaminate the first room or The third chamber of the three-unit series, each containing intrinsic gas. In the second chamber of the three-unit capture chamber, and (2) the dopant gas in the third of the three-unit of the capture chamber. Sticking to the previous set and the dopant gas in the first chamber of the three-unit series The next set of holding rooms does not mix in the form that More suitable than intrinsic materials, it is an alloy of amorphous silicon. Which was doped by boron to form an alloy that was It is also mixed with phosphor to form a more suitable form of n-type alloy. Glow supply where vacuum pressure conditions Temperature class Reaction gas mixture Reactive gas flow rate, cathode generation level Image travel rate and pull force of The base is precisely controlled.

Claims (3)

1.Suitable binding device for the continuous production of amorphous fodosvoltaic cells. Each stacked cell has a total cell thickness of at least two units of three layers, each of which has a p-layer and a n-layer. The first floor, which is placed in the workshop on the opposite side of Intermediate floor The device is assembled by a mixer. Merged together the supply chamber base material as well as the dispenser handle. Base cleaning room Source of cleaning gas A path for bringing the cleaning gas into the cleaning room. For cleaning the base Three sets of gripping rooms for each three-story unit. The binding was arranged respectively for stratification of the P-type and the end-end binding of each trio. Units respectively and for the grip of the intrinsic layer between The P-type and N-type strata of each set were three, respectively, when three binding layers were provided for each cell unit. The receiving chamber, including the handle of the receiving section The source of the separator pad to be placed between the layers of the base material. Stay adjacent while the base material is wrapped around the handle axis of the receiver Method for vacuuming the device Paths for room heating, grip and base A continuous hundreds of sheets pathway which is automatically adjusted for The leading edge of the base material shall be passed from the handle of the receiver. A path for the continuous movement of the base material from the axis of the gripper The dispensing section is through the cleaning room and each of the three units of the room. Grip to the handlebar of the receiver Method for coherent gripping of three-layer units onto the base material or pre-grained layer. Of reactive gas, which contains the conductive gas of the semiconductor and the conductive gas of the path impurity, which are practically integrated into each chamber of the kit. Three units, each set of holding chambers for carrying the gas mixture. The selected reaction enters the capture chamber. The gas door, which is placed in the workshop, is between the capture chambers. Each pair of islands is a set of three units. Convection gas source for gas doors A path, which was adjusted to guide the sweeping gas through the gas door for Separate the reaction gas mixture in the second chamber of the three-unit series. Each batch of the chamber can be significantly from the reaction gas mixture in The first and third rooms of the three-unit series of such rooms. The original separate room was placed between the third rooms of the suite. Three units of the suite and the first of the three units of the ensuite, separate gas sources. The path for the separation of the gas mixture into the separating chamber. Provide a unidirectional flow of gas from the separating chamber into the The third room of the three-unit series, one of the above, and the first of the series. The next three units thereof To prevent cross-contamination of the room Of the gas mixture in each room greatly and the method for maintaining the base temperature Base displacement rate, base tension, mixture of reaction gas in capture chamber Each island The gas mixture separates the separating chamber in the gas separator chamber. Convection in the gas door, the pressure difference between the bedside chamber and the Push the vacuum that has been set up well. By which photovoltaic cells are produced Continuously auto-stack high-quality stacked voltaics On base material 2. equipment as in claim 1, where the three-unit set of Each gripping chamber is positioned almost level, the base material is a long plate, which is extended through a three-unit of Each set of island capture rooms The discharge path for the base plate is located near the end. One of the levels and the support path for the base plate is located near the other end. One of the level 3. The device as in claim 2, where the cell unit Three-layer, two gripping units onto the base plate, where the three-layer units The second is on the first three-story unit and the six capture chambers are arranged in order from the near-point. With the supply route to a point close to the receiving route and the first gas mixture reaction gas mixture for Grip chamber, first and fourth chamber, gas mixture type Second for capture chamber second and fifth and gas mixture of third type for third and sixth capture chamber 4. Equipment as in claim 1 where the alloy At least one type of silicon was introduced into the capture chamber. The second island and the fifth room At least the alloy One silicon and phthalate impurity are introduced into The capture room, island first and fourth room. And at the very least A silicon alloy and a type of n dopant is Brought into the third and sixth grip rooms. 5. Equipment as in claim No. 1, where there is still a way For clearing the island, capturing the island and separating each room by bringing Nitrogen gas enters these chambers. 6. Equipment as in claim No. 1, where the method of cleaning There is a way to bring argon and hydrogen into the workshop. Cleanliness is also included. 7. Equipment as in claim No. 1, where the distribution room still has A discharge roller for conveying the base material to the gripping chamber. The first island is included. And the receiving room also has a rotating roller according to the pattern A receiver for bringing the base material to the handle of the receiver is included. 8. Equipment as in claim 7, where each motor They are intended to drive the handle of the supply, the feed rollers and the receiving rollers. And the way for turning The handle of the receiver is the motor 9. The device as in Clause 8, where the motor can Optional adjustable for moving base material through the chamber under tension. To eliminate the deflection of the base 1 0. Equipment as in Clause 9, where the base material It moves through the gripping chamber at a nearly constant speed of approximately 1 foot per minute under operating tension of approximately 10 psi. 1 1. The device, as in claim 1, where the base plate. Run along the first directional roller which is placed in front of the level. Of the gripping chamber for bringing the base material to the first gripping chamber and the baseplate running along the second gripping roller Which is placed behind the level of the room, gripping the base material To the reciprocating rollers The first guide roller covered in the base distribution chamber. Which is located between and connects the workshop to the room The first gripping and cleaning chamber and the second guide roller are enclosed within the base chamber. After the tackling, the workshop is connected to the sixth capture chamber. Cooled down, connected in the workshop and placed between the leading chambers. Base after gripping and receiving chamber to cool the base material first To wrap the base material, the pulley core to receive the base 1 3. Equipment as in Clause 11, where the base material plate. Extension between the first and second alignment rollers. The slack was slightly lowered and the level of the base supply chamber, the separating chamber, the base chamber after the gripping chamber, and the grip chambers were stacked sequentially so Suitable for a slight drop in the base material 1 4. Equipment as in Clause 12 where every room Was maintained at a vacuum pressure of about 0.5 tor 1 5. The equipment as in claim No. 1, where the gas door has A number of heating elements to maintain high temperatures. Of the base as it passes between rooms 1 6. Equipment as in Clause 15 where the parts give Each piece of heat is connected to the power supply. Thermocouple And thermocouple-based controls wherein the temperature of the base material in each heated room Can be monitored and controlled in each room. 1 7. Equipment as in Clause 15, where the temperature in The capture chamber was maintained in a range of approximately 200-300 degrees Celsius 1 8. The device, as in claim 1, where the capture path The island consists of a luminescent grip path that includes a cathode, a radio frequency generator and a tuner, with a mixture of The reaction gas is disintegrated into a basic scheme 1. 9. Equipment as in claim 18, where the cleaning room has cathodes, radio frequency generators and tuners as well. Hold the right number 18, where the cathode in the room. The first grip is about 30 inches long, the cathode in the holding chamber. The second island is about 100 inches long, the cathode in the capture chamber. The third and fourth rooms are approximately 12 inches long, cathode in the island capture chamber. The fifth room is about 30 inches long, the cathode in the sixth room is about 12 inches long, and the cathode in the cleaning room is about 25 inches long. 1. Equipment as in claim No. 20, where the cathode in the room The second cathode consists of two single cathodes, each of which is connected to the radio frequency generator. Each machine and tuner 2 2. Manufacturing method of stacked amorphous photovoltaic cells. On a continuous long sheet of the base material from which the base material is adjusted To move from the handle of the supply through the base cleaning chamber And a set of three sets of separate capturing rooms Two minimums to the handle axis of the reactive gas source receiver containing a semiconductor material. Path for lead The reaction gas mixture enters each capture chamber. For the cracking and binding of non-semiconductor layers It is a continuous nested effect with various conductivity on the plates of the base material passing through those chambers. The method consists of the process of automatically attaching the base material to transmit and fix the lead end. The base material plate from the handle of the supply shaft to the handle of the receiver. Attaching the guide end of the displacement separator from the displacement separator rod to the base material before winding the base material around the handle of the receiver, with the separator pad between adjacent layers of the The base material while the base material is wrapped around the support axis. Sealing and vacuuming the chamber in which the base material passes. Flushing the room Room heating, adhesion to warm the base and section material Mix of the reaction gas up to the binding temperature Providing a gas door between adjacent grip chambers Each pair of sets of three units each Provision of a sweeping gas The gas swept into each gas door. Provision of a reactive gas source Determination of the reaction gas mixture and the conduction of the gas mixture The defined reaction enters the binding chamber where the flow of the reactive gas mixture and the convection gas flow are adjusted. To prevent cross-chamber contamination of the gas mixture in the process Being in the adjoining room is very strong. Provision of a clean gas source Determination of the cleaning gas flow into the base cleaning chamber The procedure for determining and conducting the reaction gas mixture also includes: (1) determination of the flow of conductive gas, semiconductor and The dopant from the source enters the first capture chamber of the third set. Each unit, (2) determining the flow of semiconductor gas. And the impurity gas having opposite conditions from the source to The third binding chamber of each of the three binding chambers and (3) the determination of the gas flow conducts the semiconductor into the binding chamber. The second room of each of the three-unit series. Provision of a separate gas source Providing a separate room separating the room between the rooms Third of the series, the first three units with the first capture room of the series. Third, the second set, determination of the gas mixture separated from the source. And bringing the mixture of gas to a specified barrier into the room Adhesion periodically, bringing the gas mixture separating to flow in One way from the room, the separation is now entered into the third room of the suite. The first three units and the first room of the second three units. Providing energy to pathways for disintegration and capture. Mix the reaction gas onto the base material. Initiating a path for continuous movement of the base material Through the binding chamber and maintaining the base temperature, the velocity of the base, the base tension, the separation gas mixture, the convection gas in the gas door, the pressure difference between the neighboring chambers, and The vacuum pressure is well maintained. Which may produce photocells Consistently high-quality stacked voltaics 2 3. The procedures as in Clause 1 include the performance of The steps for completing the gripping process are as follows: stopping the path for the base material to pass through the gripping chamber. Do not continue Stopping the flow of the reactive gas mixture into the chamber. Leaching of the mechanical chamber with argon, which begins with In unison, the second gripping chamber of each of the three sets while maintaining the pressure difference between neighboring chambers. To ensure the flow of the gas mixture from the selected chamber, the stop heating of the parts and the shutdown of the pump unit (Clause 23, Page 7, Figure 11).