TH13040C3 - "Silicon thin-film solar cells, a-SiO superimposed structure - Google Patents

Abstract

Edit 28/04/2017 This invention involves a silicon thin-film solar cell, a-SiOH / a- SiGe: H stacked structure consisting of The substrate layer, the upper cell, the intermediate layer, the lower cell, the translucent metal electrode layer, and the metal electrode layer, where in the case of silicon thin film solar cells having a double layer structure, there is a light absorbing layer of the upper cell and the cell. Bottom thereof In the case of a silicon thin-film solar cell having more than two layers of the structure, there will be a light absorbing layer of the cell on it, which is generated from a-SiO: H and a-SiGe: H. The a-SiO: H material and the absorbance layer for the intermediate layer or the lower cell made from a-SiGe: H material to make such solar cells have a low temperature coefficient ------ Fabrication. This involves a silicon thin-film solar cell, the a-SiO: H / a- SiGe: H stacking structure consisting of The substrate layer, the upper cell, the intermediate layer, the lower cell, the translucent metal electrode layer, and the metal electrode layer, where in the case of silicon thin film solar cells having a double layer structure, there is a light absorbing layer of the upper cell and the cell. Bottom thereof In the case of a silicon thin-film solar cell having more than two layers of the structure, there will be a light absorbing layer of the cell on it, which is generated from a-SiO: H and a-SiGe: H. Generated from a-SiO: H material and absorbance layer for the intermediate layer or the lower cell made from a-SiGe: H material to make such solar cells have a low temperature coefficient:

Claims (8)

Disclaimer (all), which will not appear on the announcement page: EDIT 28/04/2017 1. Double structure silicon thin-film solar cell. a-SiO: H / a-SiGe: H Containing Base material layer Connected to the upper cell It serves to allow light and electric current to flow through the upper cells connected to the main and intermediate substrate layers. The upper cell consists of the photoreceptor, or p (p), buffer, absorbent, and ligament (n) layer, the intermediate layer connected between the upper and lower cells. With an intermediate layer and a translucent electrode layer Where the lower cell Such includes Exposure layer or p (p) layer, buffer layer, absorbent layer, and tendon (n) layer, translucent metal electrode layer. Connected to the lower cell and the metal electrode layer It serves to reflect the back light for higher current and the metal electrode layer connected to the translucent metal electrode layer. Serves to reflect the back light To make the electricity higher And is the connecting part To supply electricity to external devices, a characteristic is that, in the case of silicon thin film solar cells having a double layer structure, there is a light absorption layer of the upper and lower cells. In the case of structured silicon thin-film solar cells, they are generated from amorphous silicon oxide (a-SiO: H) and amorphous silicon germanium (a-SiGe: H) materials, respectively. Stacked more than two layers There will be a light absorbing layer of the upper cells made up of the material. Material amorphous silicon oxide (a-SiO: H) and a light absorbing layer for Intermediate layer or lower cell It is constructed from amorphous silicon germanium (a-SiGe: H) material to make such solar cells have a low temperature coefficient. 2. Stacked structure silicon thin-film solar cells. a-SiO: H / a-SiGe: H According to claim 1, where the base material layer is A transparent conductive glass (Transparent conductive oxide) or plastic 3. Thin-film silicon solar cells. a-SiO: H / a-SiGe: H According to claim 1, where the photoreceptor or p (p) layer of the upper and lower cells It is a silicon oxide microcrystalline (p- (formula) c-SiO: H). 4. Silicon thin film solar cell, stacked structure. a-SiO: H / a-SiGe: H According to claim 1, where the buffer layer Of the above cells It is intrinsic amorphous silicon oxide (i-a-SiO: H buffer layer) and buffer layer. Of the bottom cell It is intrinsic amorphous silicon (i-a-Si: H buffer layer). 5. Thin-film silicon solar cells. a-SiO: H / a-SiGe: H According to claim 1, where the tendon (n) of the upper and lower cells Is polycrystalline silicon (n- (formula) c-Si: H) 6. superimposed silicon thin film solar cell a-SiO: H / a-SiGe: H According to claim 1, where the said intermediate level A zinc oxide (ZnO: Al intermediate layer). 7. Silicon thin film solar cells, stacked structure. a-SiO: H / a-SiGe: H According to claim 1, where the transparent metal electrode layer A zinc oxide (ZnO: Al back reflector layer). 8. Silicon thin film solar cells stacked structure. a-SiO: H / a-SiGe: H According to claim 1, where the electrode layer is silver (Ag) or aluminum (Al) ------ 1.Silicon thin-film solar cells, stacked structure a-SiO: H / a-SiGe: H Containing Base material layer Connected to the upper cell It serves to allow light and electric current to flow through the upper cells connected to the main and intermediate substrate layers. The upper cell consists of the photoreceptor, or p (p), buffer, absorbent, and ligament (n) layer, the intermediate layer connected between the upper and lower cells. With an intermediate layer and a translucent electrode layer Where the lower cell Such includes Exposure layer or p (p) layer, buffer layer, absorbent layer, and tendon (n) layer, translucent metal electrode layer. Connected to the lower cell and the metal electrode layer It serves to reflect the back light for higher current and the metal electrode layer connected to the translucent metal electrode layer. Serves to reflect the back light To make the electricity higher And is the connecting part To supply electricity to external devices, a characteristic is that, in the case of silicon thin film solar cells having a double layer structure, there is a light absorption layer of the upper and lower cells. In the case of structured silicon thin-film solar cells, they are generated from amorphous silicon oxide (a-SiO: H) and amorphous silicon germanium (a-SiGe: H) materials, respectively. Stacked more than two layers There will be a light absorbing layer of the upper cells made up of the material. Material amorphous silicon oxide (a-SiO: H) and a light absorbing layer for Intermediate layer or lower cell It is made from amorphous silicon germanium (a-SiGe: H) material to make such solar cells have a low temperature coefficient. 2. Thin-film silicon solar cells, stacked structure. a-SiOe: H / a-SiGe: H According to claim 1, where the base material layer is Transparent conductive oxide glass or plastic 3. Thin-film silicon solar cells, stacked structure. a-SiOe: Ha-SiGe: H According to claim 1, where the photoreceptor or p (p) layer of the upper and lower cells It is a microcrystalline silicon oxide (p- (formula) c-SiO: H). 4.Nested structure silicon thin film solar cells a-SiOe: Ha-SiGe: H According to claim 1, where the buffer layer Of the above cells It is intrinsic amorphous silicon oxide (i-a-SiO: H buffer layer) and buffer layer. Of the bottom cell It is intrinsic amorphous silicon (i-a-Si: H buffer layer). 5. Thin-film silicon solar cells, stacked structure. a-SiOe: Ha-SiGe: H According to claim 1, where the tendon (n) of the upper and lower cells Is polycrystalline silicon (n- (formula) c-Si: H) 6.Silicon thin-film solar cells, stacked structure a-SiOe: Ha-SiGe: H According to claim 1, where the said intermediate level Zinc oxide (ZnO: Al intermediate layer) 7.Silicon thin-film solar cells, stacked structure a-SiOe: Ha-SiGe: H According to claim 1, where the transparent metal electrode layer Zinc oxide (ZnO: al back reflector layer) 8.Silicon thin-film solar cells, stacked structure a-SiOe: Ha-SiGe: H According to claim 1, where the electrode layer is silver (Ag) or aluminum (Al).