SU962233A1 - Frosting batch - Google Patents

Description

The invention relates to the technology of manufacturing semiconductor devices, namely, surface treatment of glass substrate by etching.

Known etching solution, including, wt.%:

HF19-32

NH4F19-32

Npp Rest

This solution is used in the manufacture of phase randomizing masks by creating a relief. The etching depth is 0.03 µm.

The closest to the proposed composition is an etching solution 2, comprising, by weight.h:

HF10

K COj3

NH4F.3

This etching mixture is used to matte glass with a high content of BijOj. However, this solution cannot provide the specified class of surface roughness.

The purpose of the invention is to provide a roughness of 0.32-0.40 microns.

This goal is achieved by the fact that the pickling solution, including HF, UHPP and KiCOj, additionally

holds kf hf and. in the following ratio of components, wt.%

HF 40-60NH4F10-30

K7SOz10-20

KF. HF3-5

5-10

KgSg OVvedeniye in the KF-HF and K complex provides high quality of the surface obtained, its fine-grained one single structure, regulates obtaining the roughness parameter RQ 0.32-0.40.

The quality of the surface of the glass or quartz pollozek to which the microfilm is applied / ultimately depends on the quality of the semiconductor device as a whole.

20

The table shows the made up pickling solution.

i Continuation of the table

Note. The roughness of the treated surface in compositions 1-3 is 0, 36, 0.32 and 0.40 µm, respectively.

The treatment process is as follows. .

The layer, glass, including quartz glass, is degreased in a 5% solution of hydrofluoric acid HF, then placed in an etching mixture of the composition proposed and treated at 60-70 s for 1-10 minutes. Then the parts are removed from the solution, neutralized in 3-5% ammonia solution, washed successively in running and distilled water and dried in an essential cabinet for 5-7 minutes at 50-70 ° C.

The use of the invention in semiconductor technology allows HtocTb to improve the quality of manufactured devices and replace the expensive process of machining the surface of glass with a chemical one.

Devices using substrates treated with the proposed composition, will find application in medicine, electronic vacuum electronic equipment.

Claims (2)

Invention Formula Etching solution comprising HF NH4F and K-jiCOj, characterized in that, p. In order to provide a roughness of 0.32-0.40 microns, it additionally contains KF HF and. the following ratio of components, wt.%: HF40-60 NH4F10-30 r 10-20 KF-.HF3-5 5-10 Sources of information taken into account in the examination 1. USSR author's certificate WJ703513, cl. From 03 to 15/00, 1977. 2. Author's testimony of the USSR No. 256188, cl. From 03 to 15/00, 1967.