SU898309A1

SU898309A1 - Method of producing sensing element

Info

Publication number: SU898309A1
Application number: SU802929579A
Authority: SU
Inventors: Людмила Михайловна Завьялова; Эдуард Ефимович Гутман; Игорь Алексеевич Мясников
Original assignee: Предприятие П/Я А-7629
Priority date: 1980-05-22
Filing date: 1980-05-22
Publication date: 1982-01-15

Description

(54) СПОСОБ ПОЛУЧЕНИЯ ЧУВСТВИТЕЛЬНОГО ЭЛЕМЕНТА(54) METHOD FOR OBTAINING A SENSITIVE ELEMENT

II

Изобретение относитс к газовому анализ и может бытьиспользовано цл получени полугфовоцниковых чувствительных Элементов при определении молекул рного киспорода в Боцороде.The invention relates to gas analysis and can be used to obtain semi-photographic sensitive elements in the determination of molecular oxygen in Bozorod.

Известен способ получени чувствительных элементов в вице полупроводниковых пленок окислов металлов путем напылени металла в вакууме с последующим его окислением Ц .A known method of producing sensitive elements in vice semiconductor films of metal oxides by spraying a metal in vacuum followed by its oxidation.

Однако этотспособ не дает возможности получить чувствительный элемент , дл использовани его в газовом анализе.However, this method makes it impossible to obtain a sensitive element for use in gas analysis.

Наиболее близким техническим решением к изобретению вл етс способ получени чувствительного элемента дл газового анализа путем нанесени тонкой полупроводниковой пленки окиси цинка на кварцевую подложку. Использование чувствительного элемента, выполненного по этому способу, и измерение электросопротивлени детектора при определении молекул рного кислорода в инертных газах и азоте стало возможным при добавке водорода С2 .The closest technical solution to the invention is a method for producing a gas analysis sensitive element by applying a thin semiconductor zinc oxide film to a quartz substrate. The use of a sensing element made by this method, and the measurement of the electrical resistance of the detector in the determination of molecular oxygen in inert gases and nitrogen became possible with the addition of hydrogen C2.

Однако в св зи с тем, что при повышенных температурах происходит медленна диффузи атомов водорода в обьем полупроводниковой пленки, наблюда етс монотонное снижение сопротивлени чувствительного : элемента. Этот эффект вызывает необходимость периодического контрол начального сопротивлени элемента , что вл етс нежелательным эффектом при создании серийного чувствительного элемента.However, due to the fact that at elevated temperatures there is a slow diffusion of hydrogen atoms in the bulk of the semiconductor film, a monotonic decrease in the resistance of the sensitive element is observed. This effect necessitates periodic monitoring of the element's initial resistance, which is an undesirable effect when creating a serial sensing element.

Целью изобретени вл етс ликвидаци временного дрейфа сопротивлени чувствительного элемента при его работе в водородсодержащих средах.The aim of the invention is the elimination of the temporal drift of the resistance of the sensitive element when operating in hydrogen-containing environments.

Claims

This goal is achieved by the fact that according to the method of obtaining a sensitive element for gas analysis by depositing a thin semiconductor film of zinc oxide on a quartz substrate, the sensitive element is treated with 389 atomic atoms in a hydrogen stream at the operating temperature of the element. During processing, the volume of the zinc oxide crystal is saturated with hydrogen atoms, which causes the concentration of hydrogen atoms near the surface and in the volume of the crystal to even out, which ultimately leads to stabilization of the resistance over time. Example. The sensitive element in the form of a thin semiconductor zinc oxide film deposited on a quartz substrate, the electrical conductivity of which is recorded, is treated with hydrogen atoms at a temperature of 25 ° C. The treatment is carried out in a hydrogen stream (hydrogen consumption 12 l / h). Prior to treatment with hydrogen atoms, a monotonic decrease in the resistance of the element due to the diffusion of hydrogen atoms in the o6be crystal is observed. After processing, the resistance of the element is eliminated. Hi and FIG. Figure 1 shows the dependence of the resistance of an element R on time t when calibrating a sensitive element in hydrogen. There are various concentrations of oxygen before treatment with hydrogen atoms; in fig. 2 - the same, after treatment with hydrogen atoms, while the initial resistance of the element is constant (asterisks denote the moment of oxygen supply, circles - the moment of switching off the oxygen supply). FIG. 1 and 2 numbers correspond to the following volume content of acid. sort of %: I - 1.9 - iff 2 - 9.5-U 3 - 4.7-10V4- 1.9. 5 - 3.8-lO The proposed method favorably differs from the known one, since, while retaining all the positive qualities, in particular the low inertia of the semiconductor film and the high accuracy of oxygen determination, such an important positive quality of the sensitive element is acquired, as a stable initial resistance of the element, that is a prerequisite for the creation of a serial element for the determination of molecular oxygen in hydrogen. The invention method of obtaining a sensitive element for gas analysis by applying a thin semiconductor zinc oxide film on a quartz substrate, characterized in that, in order to eliminate the temporal drift of the resistance of the sensitive element When it is used in hydrogen-containing slate, it is treated with atomic hydrogen in a stream of hydrogen at an operating temperature an item. Sources of information taken into account in the examination 1. I. I. I. S. Miknikov. Semiconductor detectors of active particles in physicochemical studies. - Journal of the All-Union Chemical Society. DI Mendeleev, vol. 20, No. 1, 1975, p. 19. - certificate of the USSR No. 737357, cl. С О 1 В 13/00, 09/06/76 (prototype).

R.KUM

K.KOhm

9.0

s.o

2