SU896581A1 - Method of determining statistical parameters of semiconductor material specific resistance - Google Patents

Description

(54) METHOD FOR DETERMINING STATISTICAL PCRMETERS OF V / OWN RESISTANCE OF SEMICONDUCTOR

I

This invention relates to metrology and standardization and can be used in metallurgy; electrical and electronic industry in determining statistical parameters

resistivity of semiconductor materials and structures.

A known chiffasd method for determining the resistivity of a semiconductor material with the placement of the probe needles on a flat, encrypted semiconductor surface along the vertices of a square so that the probes are perpendicular. the surfaces are di- cular, and the axis of symmetry is perpendicular to the surface; It passes through the selected surface point. In the method, the probes located on one side of the square are passed through, a current of a given magnitude is measured, and the voltage drop is measured between the probes located on the opposite side of the square; using the measured values of the current and the geometrical dimensions of the semiconductor, calculate the

MATERIAL

Reduced across the volume extended along the surface of the semiconductor in the direction of the perpendicular line of the potential probes, the realization of the resistivity of the material in the vicinity of the selected point.

However, the extension of the averaging region determines the dependence of the possible value (realization) of the resistivity in the vicinity of the selected

10 points from the orientation of the probe system. In other words, the resistivity of a non-uniform material in the vicinity of a selected point when averaged over an elongated volume is

15 is a random value, and the possible value determined by the above method is unreliable in the metrological sense due to the lack of information about dispersion.

Closest to the proposed chv

Claims (2)

The 20 three-probe method of measuring the resistivity of a semiconductor material with the placement of the probes on the surface along a straight line, consisting in 38G roMj, that ua aposkuyu polished surface of a heterogeneous floorboard set up a system of four exact points: the probe-OUTs, which are megaplanes, are located In rsnoc, bones are equally spaced tpn from each other, hakz, which is the axis of the sensor and the perr probe; en shtkul rtsh the surface and passes through the ispes point, the point of turn, passes through the outer probes the current given k - chiiy, measure the voltage drop f / ie under the average-1 and probes, using the measured values of k1 current and maggo-sia, taking into account the distance between the probes and the geometrK4e: jKHX dimensions, the psi semiconductor calculates the volume averaged over the length, elongated surface heterogeneous. However, in the perpendicular direction of the Institute of Probes, the resistivity of the heterogeneous material in the vicinity of the selected point J 2 |, However, in this case the realization: No.: unreliable. The chain of the invention is the determination of the reliable meaning of the specific match of the heterogeneous material in the vicinity of the selected point; st: no shorter heterogeneity of the material of the measurement cathode obtaining characteristic (.: ticks of the degree of heterogeneity of the material, increasing the accuracy of the measurement in the vicinity of the selected and expanding the diagonal of the measured, successful coherence towards larger values. The goal is achieved by those. , -gk in the method of determining statistical parameters of specific resistivity of the 1FOVODNIK material to the floor, it is said that the system is made of jio jl: fovapn; or a heterogeneous semi-conductor surface; the four point probes, which are metal needles, located in the same plane at an equal distance from each other so that the axis of symmetry of the perpendicular to the surface passes through the selected point of the surface, passes through the outermost probes the constant current of a given value, measuring the voltage drop between the sreck probes are measured, and the measured values of the current and voltage, taking into account the distance between the probes and the geometrical dimensions of the semiconductors, calculate averaged over the volume extended along the surface and non-uniform semiconductor in the direction perpendicular to the line of probes, the implementation of the conventional impedance in the vicinity of the selected To-uKHj from. infinitely many countable values of the resistivity in the vicinity of the selected point, potential values are selected /}, forming a pre-selected selective coEoivynKoci-fc,: for which the probe system rotates the symmetry axes with the given angle: -u; uo; .i ka 360 ° and for each recorded fouling of the region of the average determine the response of the resistivity of the heterogeneous material in the vicinity of the selected point, and from the obtained Sl realizations of the resistivity of the sample by the angular displacement individual resistivity in the vicinity of the selected point and the average target resistivity of the sample with n times the dispersions, iia drawing shows the location of the probes on the surface of the semiconductor and the area of the average at the time of determination of the statistical resistivity values The proposed method is a current zone. currents .; surface 6 floor. riuoBoaiiHify i.); -,. :: ;;. ;; -. АйГ |; .нл; mo.dov „SEEED for, 1:; ü: s;:. h: .and :: - LI. The specific resistivity of non-uniform material in the vicinity of the selected point. And from the orientation area of the average and resistance ü nvi) i c (- "i oi points of determination of Fi LI i IT i MHO-ecTBOM its jfo OMHII j L, mi, Practically DL5 definitions; the statistical parameters of the specific co-stress (generic dispersion and general. It is necessary to have a finite number of POSSIBLE values: which can be selected from infinite sets of techniques that provide the occasional selection and get Leading sampling Such a selection can be carried out by measuring the measurement of possible Hbjx reapitations, for example, a probe probe with an angular pitch U). li., 1 - and where Y is the number measured. The average specific resistance of the sample and the dispersion of the sample will be determined by s-tc by formulas 4 - G., .р1 where p. - implementation of specific protrorg; & laziness in the vicinity of the selected point in i dimension; Y is the sample size. The use of the proposed method provides, in comparison with known methods, a determination of the reliability of the resistivity in the vicinity of a selected point; for a given reliability, an increase in the accuracy of determining the separation of the dispersion of heterogeneity, which in the known methods causes an additional error and increases with increasing measured resistivity, a characteristic of the degree of heterogeneity of the semiconductor material along the direction passing through the selected point. Claims The method of determining the statistical parameters of the resistivity of a semiconductor material is that a system of four-point probes, metal needles located in one plane at an equal distance from each other, is installed on a flat grinding surface of a non-uniform semiconductor so that the axis The perpendicular surface to the horizon passes to the selected point of the surface, a current of a given value is passed through the outermost surface probes, measuring the voltage drop between the middle probes, using the measured current and voltage values, taking into account the distance between the probes and the geometrical dimensions of the semiconductors, averaged over the volume extended along the surface of the non-uniform semiconductor in the direction perpendicular to the 89 1 radius buttercup probes is calculated resistivity in the vicinity of the selected bale, characterized in that, "ITS, with a chain of reliable value of the resistivity of the neodymium material in the vicinity of the selection of the Eoy point, decreases the influence of material inhomogeneity on the result of measurability according to the characteristics of the degree of material emissivity, increasing the measurement accuracy in the vicinity of the selected point and extending the measurement range of the 4th resistivity towards large values, and choosing from an infinite number of possible values of specific concentration in the vicinity of the selected hench the possible values of the representative sampling scooping, for which the probe system is rotated around the axis of the metrics of the probes with zadaknnn l angular step on and for each fixing position of the averaging region determined the implementation of the resistivity of the inhomogeneity in the vicinity of the selected point n according to the obtained implementations of the resistivity of the sample by the angular displacement calculated the dispersion of the resistivity in the vicinity of the selected point and the average resistivity Samples with reduced V and times the dispersion, where - h is the number of measurements. Sources of information taken into account in the examination 1. Batavia V. In. Pantuev, V.I., Prigshpko, V.I. — The Measurement Engineer, 1974, No. II, p. 71-72. 2.Pavlov L.P. Methods for determining the basic parameters of semiconductor matrices, Higher School, 1975, p. 5-16 l