SU892323A1

SU892323A1 - Single current pulse amplitude lever registration method

Info

Publication number: SU892323A1
Application number: SU782598633A
Authority: SU
Inventors: Алексей Николаевич Камышный; Геннадий Алексеевич Алексеев; Александр Иванович Андреев
Original assignee: Войсковая часть 67947
Priority date: 1978-04-03
Filing date: 1978-04-03
Publication date: 1981-12-23

Description

Изобретение относится к измерительной технике и может быть использовано для проведения испытаний различных технических систем, где требуется измерение и регистрация амплитуды одиночного импульса тока значительной ⁵величины, например наведенного импульса или импульса перенапряжений при коммутационных операциях.The invention relates to measuring technique and can be used to test various technical systems where the measurement and registration of the amplitude of a single current pulse of a significant ⁵ magnitude is required, for example, an induced pulse or an overvoltage pulse during switching operations.

Известен способ измерения амплитуды импульсного тока или напряжения, ос- ¹⁰нованный на использовании конденсатора, включаемого в контролируемую цепь, в котором амплитуду импульса тока или напряжения определяют по накопленной величине заряда на конден- ^,5саторе ϋΐ] .Known method of measuring the amplitude of the pulsed current or voltage OS- ¹⁰ Nova-use capacitor in a controlled circuit, wherein the current pulse amplitude or the voltage determined by the magnitude of the charge stored on capacitor ⁵ Satoru ϋΐ].

Недостатком данного способа является невозможность длительного хранения измеренной величины из-за постепенного разряда конденсатора.The disadvantage of this method is the impossibility of long-term storage of the measured value due to the gradual discharge of the capacitor.

Наиболее близким техническим решением к изобретению является способ измерения и регистрации пиков тока, [согласно которому об амплитуде тока судят по величине остаточного магнитного потока ферромагнитного сердечника, намагничиваемого измеряемым током Г?].The closest technical solution to the invention is a method for measuring and recording current peaks, [according to which the amplitude of the current is judged by the magnitude of the residual magnetic flux of the ferromagnetic core magnetized by the measured current G?].

Цель изобретения - увеличение длительности сохранения информации, повышение точности и расширение диапазона измерений.The purpose of the invention is to increase the duration of information storage, increase accuracy and expand the measurement range.

Поставленная цель достигается тем, что согласно способу, основанному на измерении измененного под влиянием прошедшего импульса тока параметра чувствительного элемента,, регистрируемый импульс тока пропускают через полупроводниковый элемент, вызывая его тепловой или лавиннотепловой пробой, измеряют остаточное сопротивление пробитого полупроводникового элемента и по заранее полученной экспериментальной зависимости между амплитудами импульсов тока и остаточными сопротивлениями полу проводникового элемента определяют регистрируемый импульс тока.This goal is achieved by the fact that according to the method based on the measurement of the parameter of the sensitive element changed under the influence of the transmitted current pulse, the detected current pulse is passed through the semiconductor element, causing it to be thermal or avalanche-thermal breakdown, the residual resistance of the punched semiconductor element is measured and the experimental dependence obtained in advance between the amplitudes of the current pulses and the residual resistances of the semi-conductor element is determined first current pulse.

Кроме того, полупроводниковый элемент предварительно необратимо пробивают импульсом тока, амплитуда которого заведомо меньше амплитуды регистрируемого импульса.In addition, the semiconductor element is previously irreversibly punctured by a current pulse, the amplitude of which is obviously less than the amplitude of the detected pulse.

Действие предлагаемого способа основано на экспериментально установленном свойстве полупроводниковых элементов, которое состоит в том, что между остаточным сопротивлением необратимо пробитых полупроводниковых элементов и амплитудой тока, протекающей через полупроводниковый элемент при пробое (при длительности импульса ,более единиц миллисекунд), существует стабильная однозначная зависимость.The action of the proposed method is based on the experimentally established property of semiconductor elements, which consists in the fact that there is a stable unambiguous dependence between the residual resistance of irreversibly punched semiconductor elements and the amplitude of the current flowing through the semiconductor element during breakdown (with a pulse duration of more than a few milliseconds).

На фиг. 1 приведена экспериментальная зависимость величины остаточного сопротивления пробитых транзисторов МП15А (Root) от амплитуд и импульсов тока (I cj ), протекающих через эти приборы при пробое (для каждой экспериментальной точки зависимости испытывалось 10 приборов), пунктирной линией показан доверительный интервал величины R_0CTс надежностью 0,9; на фиг. 2 - статистически усредненная зависимость f (la) для транзисторов МП15А, построенная в координатах (R_Ocp 1/фIn FIG. Figure 1 shows the experimental dependence of the residual resistance of the punched MP15A transistors (Root) on the amplitudes and current pulses (I cj) flowing through these devices during the breakdown (10 devices were tested for each experimental dependence point), the dashed line shows the confidence interval of the value R _0CT with reliability 0.9; in FIG. 2 - statistically averaged dependence f (la) for transistors MP15A, constructed in coordinates (R _O cp 1 / f

Аналогичные зависимости (с другими диапазонами величин lq и R_0CT) получены при испытаниях диодов Д220, 1Д507А, 2Д104, Д503 и др.,а также транзисторов П210, МП16, 1Т80б,А,Б,В, 1Т403 и др.Similar dependences (with other ranges of lq and R _{0CT values} ) were obtained when testing diodes D220, 1D507A, 2D104, D503, etc., as well as transistors P210, MP16, 1T80b, A, B, V, 1T403, etc.

Способ осуществляют следующим образом.The method is as follows.

Через полупроводниковый элемент пропускают импульс тока, вызывающий его необратимый тепловой или лавиннотепловой пробой, измеряют остаточное сопротивление полупроводникового элемента и по величине данного сопротивления по экспериментально полученной зависимости между амплитудами импульсов тока; и остаточными сопротивлениями данного полупроводникового элемента определяют регистрируемый импульс тока.A current pulse is passed through the semiconductor element, causing it to be irreversible thermal or avalanche-thermal breakdown, the residual resistance of the semiconductor element is measured, and the magnitude of this resistance is measured from the experimentally obtained relationship between the amplitudes of the current pulses; and the residual resistances of this semiconductor element determine the detected current pulse.

Уменьшение доверительного интервала (или повышение надежности результата испытаний) и соответствующее повышение точности способа может быть достигнуто при использовании для снятия зависимости R_0CT = f(l ) полупроводниковых приборов с малым разбросом толщин базовой области, отбор которых может быть произведен известными методами неразрушающего контроля.A decrease in the confidence interval (or an increase in the reliability of the test result) and a corresponding increase in the accuracy of the method can be achieved by using semiconductor devices with a small variation in the thickness of the base region to remove the dependence R _0CT = f (l), the selection of which can be made by known non-destructive testing methods.

Исследования влияния амплитуд импульсов тока на величину остаточного сопротивления пробитых полупроводниковых приборов показали, что для большого числа групп и типоразмеров приборов зависимость R_ocr = fOej) хорошо апроксимируется функцией R_oc^= , где А - постоянная величина, которая может быть определена теоретически или экспериментально.Studies of the influence of the amplitudes of current pulses on the value of the residual resistance of punched semiconductor devices have shown that for a large number of groups and sizes of devices the dependence R _ocr = fOej) is well approximated by the function R _oc ^ =, where A is a constant value that can be determined theoretically or experimentally.

Данный факт позволяет упростить процедуру предварительной градуировки и уменьшить число приборов, используемых для построения зависимостиThis fact allows us to simplify the preliminary calibration procedure and reduce the number of devices used to build the dependence

Использование предлагаемого способа регистрации уровня амплитуды одиночного импульса тока позволяет значительно упростить измерительную аппаратуру и повысить надежность измерений.Using the proposed method for recording the amplitude level of a single current pulse can significantly simplify the measuring equipment and improve the reliability of measurements.

Claims

The invention relates to a measuring technique and can be used to test various technical systems where measurement and recording of the amplitude of a single current pulse are required, of considerable magnitude, for example, induced impulse or overvoltage impulse during switching operations. A known method for measuring the amplitude of a pulsed current or voltage is based on the use of a capacitor included in a controlled circuit, in which the amplitude of a current pulse or voltage is determined by the accumulated charge value on the capacitor Cl. The disadvantage of this method is the impossibility of long-term storage of the measured value due to the gradual discharge of the capacitor. The closest technical solution to the invention is a method for measuring and recording current peaks. According to which the amplitude of the current is judged by the magnitude of the residual magnet flux of a ferromagnetic core magnetized by the measured current 2. The purpose of the invention is to increase the duration of information storage, improve accuracy and extend the measurement range. The goal is achieved by the fact that, according to the method based on measuring the parameter of a sensitive element changed under the influence of a transmitted current pulse, the recorded current pulse is passed through a semiconductor element, causing its thermal or avalanche-thermal breakdown, the residual resistance of the punched semiconductor element is measured and the experimental relationship between the amplitudes of the current pulses and the residual resistances of the semi38 conductor element is determined by the register current pulse. In addition, the semiconductor element is irreversibly punched with a current pulse, the amplitude of which is obviously less than the amplitude of the registered pulse. The action of the proposed method is based on the experimentally established property of semiconductor elements, which is that between the residual resistance of irreversibly punched semiconductor elements and the amplitude of the current flowing through the semiconductor element during breakdown (with a pulse duration of more than several milliseconds), there is a stable one-to-one relationship. FIG. Figure 1 shows the experiment on the dependence of the residual resistance of the punched MP15A transistors (ROCT) on the amplitudes and current pulses (I c () flowing through these devices during the breakdown (10 devices were tested for each experimental point of dependence), the ROCT confidence interval with reliability is shown with a dashed line) 0.9; in Fig. 2, the statistically averaged dependence (-ff (la) for transistors MP15A, built in the coordinates (Qfy) t / d Similar dependencies (with different ranges of Iq and RQJ values, obtained during testing diodes D220, 1D507A, 2D10, D503, etc., as well as transistors P210, MP16, 1T80b, A, B, B 1Ti + 03, etc. The method is carried out as follows: A current pulse is passed through the semiconductor element causing its irreversible thermal or avalanche-thermal breakdown, the residual resistance of the semiconductor element is measured, and the detected current pulse is determined from the experimentally obtained relationship between the amplitudes of the current pulse rv and the residual resistances of the semiconductor element. A decrease in the confidence interval (or an increase in the reliability of the test result) and a corresponding increase in the accuracy of the method can be achieved by using to remove the dependence of semiconductor devices with a small spread of 4 thicknesses of the base region, the selection of which can be made by known methods of nondestructive testing. Studies of the effect of current pulse amplitudes on the residual resistance of punched semiconductor devices have shown that for a large number of groups and sizes of devices the dependence Roc.r 0c) is well approximated by the function Rgcf jT, where A is a constant value that can be determined theoretically or experimentally. This fact simplifies the pre-calibration procedure and reduces the number of instruments used to build the Efg dependence (Using the proposed method for recording the amplitude level of a single current pulse can significantly simplify the measuring equipment and increase the reliability of measurements. Claim 1. A single pulse measurement method current based on the measurement of the sensitive element parameter changed under the influence of the transmitted current pulse, Is that, in order to increase the duration of information preservation, the recorded current pulse is passed through a semiconductor element, causing its irreversible thermal or avalanche-thermal breakdown, the residual resistance of the punched semiconductor element is measured and according to the experimental dependence obtained in advance between the amplitudes of the current pulses and the residual The resistances of this semiconductor element determine the detected current pulse. 2. The method according to claim 1, characterized in that, in order to increase the accuracy and expand the measurement range, the semiconductor element is irreversibly punctured with a current pulse, the amplitude of which is certainly less than the amplitude of the recorded pulse. Sources of information taken into account in the examination 1. USSR author's certificate ff 1499, cl. G 01 R 19/0, 30.0.30.

2. USSR author's certificate number 93801, cl. G 01 R 19/30, 31.01.51 (prototype).