SU868944A1 - Stabilizer regulating element - Google Patents

Description

(54) REGULATORY ELEMENT OF THE STABILIZER

one

The invention relates to electrical engineering and can be used in voltage and current stabilizer circuits.

Regulatory elements (OM) of current and voltage regulators made on composite transistors 1, 2, and 3J are known.

Closest to that proposed by technical means is a stabilizer element that contains a power transistor, the base of which is connected to an emitter-matching transistor — an input transistor, whose emitter is connected to the base of the matching transistor, and a current-stabilizing cascade consisting of a current-stabilizing transistor, the base of which is connected to the collector, the matching transistor, and the emitter through a resistor is connected to the collector of the power transistor, and the source of the reference voltage / switched on th mezkdu collectors power and matching transistors 3.

A disadvantage of the known devices is their relatively low internal resistance, which reduces their range of application.

The known regulating element can be represented by an equivalent three-pole network, the parameters of which are determined by the parameters of the elements included in it. Consider the base of the input transistor known re as a base of an equivalent three-pole (transistor), it can be shown / that when idling in the emitter circuit

10 of its power transistor, the internal resistance of the OM does not exceed

R-ft-Y. h,

vi-- 1

wen

where, - conductivity collector-base current-stabilizing trans-.

15 Sistors when switched on according to the common base scheme} PP - conduction collector-base of the input transistor when switched on according to the scheme with common

20 base.

Since in most cases MOH / then it follows from (1) that the internal resistance of the known

25 re does not exceed 500 kΩ. Usually this is enough to build high-quality current generators (GTs), made / for example, according to a scheme with deep negative feedback. Indeed, for the basic GT circuit, the output impedance is defined by the formula where R is the internal resistance of the regulating element in the idle mode of the emitter circuit. Thus, the insufficiently high resistance value of the known device limits its use. . The purpose of the invention is to expand the field of application of the regulating element by increasing its internal resistance. The goal is achieved by the fact that, in the regulating element of the stabilizer, the collector of the current-stabilizing transistor is connected to the base of the matching transistor, and the collector of the input transistor is connected to the emitter of the power transistor. In FIG. 1 shows a circuit diagram of a regulator element of a stabilizer; Fig 2 - one of the variants of this scheme; in fig. 3 - equivalent to the scheme of re. The device (Fig. 1) contains a force 1 and a matching 2 transistors, between whose collectors the source 3 of the reference voltage is turned on. The base of transistor 1 is connected to the emitter of transistor 2. A collector of transceiver 4 is connected to the collector of transistor 2. A resistor 5 is connected between the collector of transistor 1 and the emitter of transistor 4. The collector of transistor 4 is connected to the base of transistor 2 and the emitter of input transistor 6. The collector of transistor 6 is connected to the emitter of the transistor 1. The proposed device is essentially a three-pole (composite transistor), the node equivalent to the collector, node 8 to the base, and node .9 to the emitter. As transistors 1 and 2, a composite transistor can be used. In the circuit (Fig. 2), the matching transistor turns on transistors 10 and 11. In the particular case, the proper current mode of transistor 11 is set by resistor 12. The equivalent circuit of the regulating element (Fig. 1), based on which is calculated by the internal resistance of the re is shown in fig. 3. This circuit includes the collector-base Y, y / j, and Y conductivity of the corresponding transistors 4, 2, and 1 and the simplified equivalent circuit of transistor 6, which contains the dependent current generator A and A, nodes E, B, and K, where etfe - current transfer coefficient of the emitter. The current generator IP sets the static mode Rd. Since the resistance of the resistor 5 is chosen rather large, in the circuit (Fig. 3) it is replaced by a DC generator. The device (Fig. 1) works as follows. Suppose that the voltage on the node 7 of the regulating element has changed by the value,. At the same time, current flows through the collector-base resistance of transistor 1 (R,), which is compensated by the circuit: emitter and collector of transistor 2, reference source 3, node 7. Currents will also flow through the collector-base resistance of transistors 2 and 4 (R Vya / 4 / Od), which first flow into the emitter of transistor 6, then into the emitter of transistor 1, and then in node 7 they are compensated. To prove the advantages of the proposed device, it is sufficient to make sure that its internal resistance R ts.h (Ua + U + U -) - (3) Consider the equivalent circuit (Fig. 3) and find the ratio go: if 1 1 × 6Y. run at idle in the emitter circuit of transistor 1. In the diagram (Fig. 3), this mode is created by a current generator 1, which has a large internal resistance. For the sake of clarity, the transistor 6 in the circuit (Fig. 3) is replaced by the simplest equivalent circuit. In the device, the main effect on Y is that the collector base of the transistors 1, 2 and 4 have the conductivity, the effect of which (Fig. 3) is modeled by the elements U, U / and Ud. From consideration of FIG. 1 and FIG. 3 it follows that all Increment U g (,, y is applied to the collector base transitions of transistors 1, 2 and 4. Therefore, the currents through the elements Y and Y are equal to ii (5). I Ugbij Y / (6) i UBbivY j. (7) On the other hand, on the basis of the first Kirchhoff law () b6 (-4) () c). Transform (8) with regard to (5) - (7), we find lVVO- b) Ueb.x VaH-H), (3) where Ug, Y,)) -, (- The last term in equation (10) can be neglected, since itft, (- “- iKvV ii 2 4- (1) Therefore, 4bix-eb,))) () X. (1) Thus, - () () () ()% - ()

By comparing (13) and (1) /, it can be seen that the proposed device has an internal resistance that is 10 times higher than in the known OM. Physically, this can be explained by the fact that in the proposed object there is a weak positive feedback, which increases R;,.

Experimental studies of the known and proposed schemes show that with the introduction of new links according to the claims, the Cc rises from 500-1000 kΩ to 90-100 MO. This allows to perform higher-quality current stabilizers based on the proposed device.

An additional advantage of the proposed RE is higher than that of the known input resistance across the base circuit of transistor 6. In addition, it has a higher current transfer rate from node 9 to node 7 with a short circuit in node 8.

Claims (3)

1. Weksler G.M. and Shtilman V.I. 5 Transistor smoothing filters. M., energy, 1979, p. 116-117, fig. 5-3. 2. US patent number 3536986, .kl.323-4 1975. 0 3. Authors certificate of the USSR 637798, cl. G 05 F 1/56, 1978. (PUl.f -03 12 i / r / "i t / tj / tKf fff hs li (Pui.3