SU802414A1 - Device for treating substrated with photoactivated gas - Google Patents

Description

(54) DEVICE FOR TREATING SUBSTRATES WITH PHOTO ACTIVATED GAS

one

The invention relates to the preparation and processing of thin films, for example, in the production technology of semiconductor devices.

Devices are known for carrying out plasma-chemical processes for the production and processing of thin films based on reactions between the substrate and the gas phase excited by various kinds of electrical discharges.

The disadvantage of these devices is the presence of overlapping particles in the gas & the phase and complexity of its composition, which complicates the control of technological processes and limits the scope of their application, for example, to obtain MOS, MIS structures, and other microelectronic devices.

It is also known a device for treating substrates with photoactivated gas, for example, for deposition of films of iolimers, comprising a reaction chamber mounted on a support plate, a substrate holder placed inside it

externally installed source of gas activation and input means to the jjZ gases output. In this device, there are no broken particles in the gas phase, since the energy of radiation quanta is insufficient for ionizing gas molecules. The spectrum of particles of the gas phase with photoactivation is much easier.

However, this device does not provide sufficiently complete and uniform gas activation in the working volume of the reaction chamber and, consequently, the speed of the technological process is the same over the entire surface to be treated. It is shuffled as with uneven illumination across the processing field, a hook and with an insufficiently effective absorption of radiation in the gas volume participating in the reaction with the surface of the substrates.

The purpose of vaping is a more complete and uniform activation of the working gas.

It is achieved by the fact that the reaction chamber is equipped with a system of mirrors installed around and above the substrate holder, and a window in the side wall for introducing radiation parallel to the surface of the substrate holder, which is rotatably mounted in the plate and having an opening in the center for the output of gases, and for introducing gas into the plate is made pipe and the annular channel.

On fig. 1 shows the proposed device, cross section; in fig. 2, section A-A of FIG. one.

On the operative plate 1, the reactive camera 2 and the source 3 of gas activation 1 (shown schematically) are installed, which has a small divergence of the light beam, for example, a laser. Camera 2 is installed on the plate 1 through a vacuum sealing gasket 4 k in the side wall in which there is a window of 5 das input of the light beam. On the face of the ring 6, the plates 1 are fastened with the help of Wings 7 mirrors 8, on which mirror 9 rests, on top of the Concentric system of mirrors 8 and chamber 2 there is a backing support 10 with substrates 11 mounted on a shaft 12 connected to a rotational drive (not shown).

The shaft 12 is fixed in the housing 13 of the plate 1 and has a hole 14 in the center for the discharge of gases. The input shaft 12 is sealed by a seal 15.

13 also includes a nozzle 16 and an annular channel for supplying the reaction gas to chamber 2. Parts of the device in contact with the reaction gas can be made from the reaction of their materials, for example, az fluoroplast, stainless steel. The surfaces of mirrors 8 and 9 can be protected, for example, with a fluorine organic polymer film.

The device works as follows.

The reaction gas supplied to the device, through the gap between the copper 6 and the substrate holder 10, enters the cavity of the chamber 2 bounded by mirrors 8 and 9 and the substrate holder 10 and is pumped out through the opening 14 through a vacuum system. The system of gas inlet and pumping provides support-. required gas pressure in the reaction volume and its radial movement from the periphery to the center of the substrate holder 10. The direction of gas movement in FIG. 1 is shown by arrows.

In the absence of radiation from the source, the gas does not react with the materials of the substrate 11, since the Moneicyn energy is not enough to activate the reaction. When radiation of the source 3 is introduced into the reaction zone, the gas molecules are excited, decompose into active atoms and radicals. Reaching the surface of the substrate, they react with it.

The course of the rays from the source 3 in the reaction chamber 2 is shown by arrows in FIG. 2. Due to the low divergence, the radiation from the source 3 tolerates multiple reflections from the system of mirrors 8 and 9, mainly in the horizontal plane parallel to the surface of the substrate holder 1O. This achieves an intense absorption of radiation in the gas layer, which participates in the reaction with the substrates 11, and an increase in the concentration of excited particles in the reaction volume. Mirror 9 prevents part of the radiation reflected by mirrors 8 from leaving the reaction zone, which additionally increases the absorption of light energy in the gas.

Claims (2)

Taken together, the arrangement of the substrates 5 on the rotating sublevel will be barely observed, the radial motion of the excited gas in the reaction chamber from, the periphery to the center of the Substrate Holder, the uniform absorption. light energy in the reaction volume leads to more complete and uniform activation of the working gas in the reaction chamber, which creates conditions for the uniformity of the process throughout the treatment area. Invention Formula A device for processing a photo-activated gas under a gas, including a reaction chamber mounted on a base plate, placed inside it substrate holder, an outside source of gas activation and means of inlet and outlet of gases, characterized in that, in order to activate gas more completely and evenly, the reaction chamber is equipped with a system of mirrors installed around and above the substrate, and a window in the side wall for inputting radiation parallel to the surface the substrate holder, which is rotatably mounted in the plate and has a hole in the center for the view of gases, and a nozzle and an annular channel are provided for introducing gas into the plate. Information sources, 1finaye in attention during the examination 55 1. Overseas Electronic Engineering. TsNIIelektrotika. M., 1978, No. 3.2. 2. US patent NO 3619259, cl. 117-93-31, 09.11.71 (prototype).