SU665350A1 - Электролюминесцентный диод и способ его изготовлени - Google Patents
Электролюминесцентный диод и способ его изготовлениInfo
- Publication number
- SU665350A1 SU665350A1 SU721754375A SU1754375A SU665350A1 SU 665350 A1 SU665350 A1 SU 665350A1 SU 721754375 A SU721754375 A SU 721754375A SU 1754375 A SU1754375 A SU 1754375A SU 665350 A1 SU665350 A1 SU 665350A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- layer
- gradient
- manufacturing
- substrate
- gaas
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 10
- 239000011701 zinc Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000699666 Mus <mouse, genus> Species 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD15357371A DD110407A3 (OSRAM) | 1971-03-09 | 1971-03-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU665350A1 true SU665350A1 (ru) | 1979-05-30 |
Family
ID=5483549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU721754375A SU665350A1 (ru) | 1971-03-09 | 1972-03-03 | Электролюминесцентный диод и способ его изготовлени |
Country Status (2)
| Country | Link |
|---|---|
| DD (1) | DD110407A3 (OSRAM) |
| SU (1) | SU665350A1 (OSRAM) |
-
1971
- 1971-03-09 DD DD15357371A patent/DD110407A3/xx unknown
-
1972
- 1972-03-03 SU SU721754375A patent/SU665350A1/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| DD110407A3 (OSRAM) | 1974-12-20 |
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